CN105128460B - The supporting substrate and its manufacturing method of tape tree lipid layer, the manufacturing method of glass laminate and electronic equipment - Google Patents

The supporting substrate and its manufacturing method of tape tree lipid layer, the manufacturing method of glass laminate and electronic equipment Download PDF

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Publication number
CN105128460B
CN105128460B CN201510290840.0A CN201510290840A CN105128460B CN 105128460 B CN105128460 B CN 105128460B CN 201510290840 A CN201510290840 A CN 201510290840A CN 105128460 B CN105128460 B CN 105128460B
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China
Prior art keywords
supporting substrate
glass
layer
silicone resin
glass substrate
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CN105128460A (en
Inventor
松山祥孝
山内优
照井弘敏
内田大辅
日野有
日野有一
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AGC Inc
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Asahi Glass Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment

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  • Laminated Bodies (AREA)
  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The present invention provides supporting substrate and its manufacturing method, the manufacturing method of glass laminate and electronic equipment of tape tree lipid layer, the supporting substrate of the tape tree lipid layer has supporting substrate and is arranged at the silicone resin layer of the one side of supporting substrate, the supporting substrate of the tape tree lipid layer is used for the laminated glass substrate on the silicone resin layer and manufactures glass laminate, wherein, protrusion is formed on the surface of the stacking glass substrate side of the silicone resin layer, the ratio between the height H and width W of protrusion H/W is less than 3 × 10‑5。

Description

The supporting substrate and its manufacturing method of tape tree lipid layer, glass laminate and electronics are set Standby manufacturing method
Technical field
The present invention relates to the manufacturing methods of the supporting substrate of tape tree lipid layer, glass laminate and electronic equipment.
Background technology
In recent years, (electronics fills the electronic equipments such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED) Put) it is just gradually being thinned, lightweight, the glass substrate used in these equipment is also carrying out thin plate.If due to thin plate The intensity deficiency of glass substrate, then the treatability of glass substrate reduces in the manufacturing process of equipment.
Recently, in order to tackle the above problem, it is proposed that following method：Prepare be laminated glass substrate and reinforcing plate Glass laminate forms the electronic device members such as display device, afterwards from glass base on the glass substrate of glass laminate Plate separates reinforcing plate (referring for example to patent document 1).Reinforcing plate has supporting substrate and is fixed on having on the supporting substrate Machine silicone layer, silicone resin layer and glass substrate are closely sealed in a releasable manner.In glass laminate, in organosilicon tree The interface peel of lipid layer and glass substrate can be stacked from the separated reinforcing plate of glass substrate with new glass substrate, as glass Glass laminated body is recycled.
Prior art literature
Patent document
Patent document 1：International Publication No. 2007/018028
The content of the invention
Problems to be solved by the invention
On the other hand, it is currently known the top that the supporting substrate that its surface configuration has coated film is placed in multiple supporting pins Portion, the method being thermally dried.In addition, the method as heat drying, it is known to use be provided with the heating of heating plate The method of device.
The inventors of the present invention when making reinforcing plate, surface configuration are had and passes through heating according to the method that patent document 1 is recorded And the supporting substrate as the film of silicone resin layer is placed in the top for being arranged on multiple supporting pins in heat treatment apparatus Portion configures heating plate on film and carries out preliminary drying processing, afterwards, dries processing after implementation and forms silicone resin layer.It is tied Fruit exists and protrusion occurs on the surface of the one side of the laminated glass substrate of silicone resin layer (hereinafter also referred to as " surface ") Situation.
In this case, the 1st interarea of glass substrate is made towards the surface of silicone resin layer, on silicone resin layer Laminated glass substrate and when manufacturing glass laminate, glass substrate is to follow protrusion present on the surface of silicone resin layer Form deforms, convex so as to similarly occur in the 2nd interarea (face of the opposite side of silicone resin layer side) of glass substrate Portion.
It is known to be made using such glass laminate such as liquid crystal panel during electronic equipment, sometimes in the position of protrusion It puts and confirms display unevenness.
The present invention is in view of problem above forms, and its purpose is to provide a kind of supporting substrates of tape tree lipid layer, are The supporting substrate of tape tree lipid layer with supporting substrate and silicone resin layer can inhibit use on silicone resin layer It is uneven that display is generated in electronic equipment made from glass laminate obtained from laminated glass substrate.
In addition, the present invention also aims to provide a kind of the glass laminated of supporting substrate for possessing above-mentioned tape tree lipid layer Body.
And then the present invention also aims to provide a kind of manufacturer of the electronic equipment using above-mentioned glass laminate Method.
The solution to the problem
The inventors of the present invention are concentrated on studies in order to achieve the above objectives, it turns out that, even if silicone resin layer Surface is there are protrusion, in the case where the height and width of protrusion meet particular kind of relationship, can also inhibit the uneven generation of display, from And complete the present invention.
That is, the present invention provides following (1)~(7).
(1) a kind of supporting substrate of tape tree lipid layer, it is organic with supporting substrate and the one side for being arranged at supporting substrate Silicone layer, the supporting substrate of the tape tree lipid layer are used for the laminated glass substrate on the silicone resin layer and manufacture glass Laminated body, wherein, protrusion is formed on the surface of the one side of the stacking glass substrate of the silicone resin layer, it is described convex The ratio between the height H and width W in portion H/W is less than 3 × 10-5。
(2) supporting substrate of the tape tree lipid layer according to above-mentioned (1), wherein, the height H of the protrusion for 0.10 μm with Under.
(3) a kind of glass laminate, possesses：The supporting substrate of tape tree lipid layer described in above-mentioned (1) or (2) and stacking Glass substrate on the silicone resin layer.
(4) glass laminate according to above-mentioned (3), wherein, the organic siliconresin is olefinic organic based polysiloxane With the reaction solidfied material of organic hydrogen polysiloxanes.
(5) glass laminate according to above-mentioned (3) or (4), wherein, the glass substrate is by with oxide benchmark Quality percentage represents that the alkali-free glass containing following compositions is formed.
SiO2：50~66%
Al2O3：10.5~24%
B2O3：0~12%
MgO：0~8%
CaO：0~14.5%
SrO：0~24%
BaO：0~13.5%
MgO+CaO+SrO+BaO：9~29.5%
ZrO2：0~5%
(6) glass laminate according to above-mentioned (3) or (4), wherein, the glass substrate is by with oxide benchmark Quality percentage represents that the alkali-free glass containing following compositions is formed.
SiO2：58~66%
Al2O3：15~22%
B2O3：5~12%
MgO：0~8%
CaO：0~9%
SrO：3~12.5%
BaO：0~2%
MgO+CaO+SrO+BaO：9~18%
(7) manufacturing method of a kind of electronic equipment, possesses：
Component formation process forms electronic equipment on the surface of the glass laminate any one of above-mentioned (3)~(6) With component, the laminated body of having electronic equipment component is obtained；With
Separation circuit removes the supporting substrate of the tape tree lipid layer from the laminated body of the having electronic equipment component, Obtain the electronic equipment with the glass substrate and the electronic device member.
(8) a kind of manufacturing method of the supporting substrate of tape tree lipid layer, the supporting substrate of the tape tree lipid layer have branch support group Plate and be arranged at supporting substrate one side silicone resin layer, be used for the laminated glass base on the silicone resin layer Plate and manufacture glass laminate, which possesses following process：
Curable silicone composition is coated on the process on the supporting substrate,
In defined chamber, the supporting substrate for being coated with the curable silicone composition is carried out at preliminary drying Reason and rear baking processing, so as to obtain the process of silicone resin layer；
The preliminary drying processing has following process：The process that heated to the curable silicone composition and Supply gas and the process from the chamber indoor exhaust into the chamber are carried out,
By adjusting the quantity delivered and capacity of the gas, inhibit the drop of solvent to the attached of the silicone resin layer It, the ratio H/W of following H and W is made to be less than 3 × 10-5,
H：Height in the protrusion that the surface of the one side of the stacking glass substrate of the silicone resin layer is formed,
W：Width in the protrusion that the surface of the one side of the stacking glass substrate of the silicone resin layer is formed.
The effect of invention
In accordance with the invention it is possible to the supporting substrate of the tape tree lipid layer with supporting substrate and silicone resin layer is provided, It can inhibit to occur using the electronic equipment that glass laminate obtained from laminated glass substrate makes on silicone resin layer Display is uneven.
In addition, the present invention can also provide the glass laminate for the supporting substrate for possessing above-mentioned tape tree lipid layer.
And then the present invention can also provide the manufacturing method of the electronic equipment using above-mentioned glass laminate.
Description of the drawings
Fig. 1 is the flow chart of the manufacturing process of the manufacturing method for the supporting substrate for representing tape tree lipid layer.
(A) and (B) of Fig. 2 is an embodiment party of the manufacturing method for the supporting substrate that tape tree lipid layer is represented by process sequence The schematic cross sectional view of formula.
Fig. 3 is the schematic cross sectional view for the composition for representing heat treatment apparatus.
Fig. 4 is the schematic cross sectional view of glass laminate.
(A) and (B) of Fig. 5 is the schematic of an embodiment of the manufacturing method that electronic equipment is represented by process sequence Sectional view.
Fig. 6 is to represent that drop is attached to the supporting substrate with curability layer of the state of curable silicone composition layer Schematic cross sectional view.
Fig. 7 is to represent to be formed with schematically cuing open for the supporting substrate of the tape tree lipid layer of protrusion on the surface of silicone resin layer Face figure.
Fig. 8 is the schematic cross section for representing the glass laminate that the supporting substrate of the tape tree lipid layer with protrusion is used to be formed Figure.
Fig. 9 is the chart of the relation of the height H and width W that represent protrusion.
Reference sign
10 supporting substrates
12 curable silicone composition layers
14 supporting substrates with curability layer
16 silicone resin layers
The surface of 16a silicone resin layers
The supporting substrate of 18 tape tree lipid layer
20 glass substrates
1st interarea of 20a glass substrates
2nd interarea of 20b glass substrates
22 electronic device members
The laminated body of 24 having electronic equipment components
26 electronic equipments
30 heat treatment apparatus
32 heating chambers
34 supporting pins
36 supporting tables
38 heating plates
40 exhaust pipes
42 carrying-in/carrying-out mouth
51 drops
The protrusion of 61 silicone resin layers
100 glass laminates
The height of H protrusions
The width of W protrusions
Specific embodiment
The preferred embodiment of the present invention is illustrated referring to the drawings, but the present invention is not limited to following realities Mode is applied, can various modifications and replacement be subject to following embodiment without departing from the scope of the present invention.
[summary of the invention]
First, the summary of the present invention is illustrated based on Fig. 6~Fig. 8.It should be noted that each portion for referring here to and The detailed content respectively handled will be described later.
The supporting substrate 14 with curability layer for having curable silicone composition layer 12 is being moved into heating dress When putting in 30, first, it will first finish to heat other band curability layers of (preliminary drying processing) in same heat treatment apparatus 30 Supporting substrate 14 taken out of via carrying-in/carrying-out mouth 42.
If at this point, due to heating vaporized solvent in the form of steam full of in heat treatment apparatus 30, the solvent Steam also can leak into outside from carrying-in/carrying-out mouth 42 sometimes.Leak into external solvent vapour cool down sometimes and with drop 51 Form is dripped, and is attached to the curable silicone that will move into the supporting substrate 14 with curability layer in heat treatment apparatus 30 On the surface 12a of composition layer 12.
Fig. 6 is to represent that drop is attached to the supporting substrate with curability layer of the state of curable silicone composition layer Schematic cross sectional view.
The band that shown in Fig. 6, drop 51 is attached to the state of the surface 12a of curable silicone composition layer 12 cures Property layer supporting substrate 14 move into heat treatment apparatus 30 and heated (preliminary drying processing), thereafter, it is filled from heating It puts and (rear baking processing) is taken out of and further heated in 30, be consequently formed silicone resin layer 16, but forming organosilicon tree During lipid layer 16, concentration gradient is made to become uniform effect and is told on, the solid of curable silicone composition layer 12 into Divide and spread into the drop 51 there is no solid constituent.Therefore, formed at the position that the drop 51 of silicone resin layer 16 adheres to From the protrusion 61 that surface 16a is protruded (with reference to Fig. 7).Protrusion 61 is a part for silicone resin layer 16.
Fig. 7 is to represent to be formed with the schematic of the supporting substrate 18 of the tape tree lipid layer of protrusion on the surface of silicone resin layer Sectional view.
As shown in fig. 7, ditch portion 62 is formed with around protrusion 61.This is because the organic siliconresin around protrusion 61 The volume of layer 16 reduces the solid constituent diffusion of curable silicone composition layer 12 and forms the amount of protrusion 61.
Fig. 8 is the schematic cross section for representing the glass laminate that the supporting substrate of the tape tree lipid layer with protrusion is used to be formed Figure.
Laminated glass substrate 20 manufactures glass laminate on the surface 16a of the silicone resin layer 16 with protrusion 61 When 100, as shown in figure 8, glass substrate 20 is deformed with following the shape of protrusion 61, so as in the 2nd master of glass substrate 20 Similarly occurs protrusion 71 on the 20b of face.
When making the electronic equipment such as liquid crystal panel using such glass laminate 100, protrusion 61 and protrusion 71 Position is not easy transmitted light, and it is uneven (stain is uneven) to confirm display sometimes.
Therefore, the 2nd interarea 20b is planarized by the way that the protrusion 71 of glass substrate 20 is ground removing, can inhibited aobvious Show uneven (stain is uneven).But from such glass laminate 100 supporting substrate 18 of tape tree lipid layer is removed when, sometimes The power of recovery of shape is made to play a role in glass substrate 20, the position that protrusion 71 is ground becomes recess portion (not shown), the part It is uneven (white point is uneven) to still result in display.
But the inventors of the present invention find, even if silicone resin layer 16 surface 16a there are protrusion 61, in protrusion 61 Height H and the ratio between width W H/W be less than 3 × 10-5In the case of, it is uneven that display will not be confirmed.
It should be noted that the as shown in fig. 7, height H (units of protrusion 61：μm) refer to the water on vertex by protrusion 61 It is most short between horizontal line (line (following similary) in the face direction of supporting substrate 10) and the horizontal line for passing through the lowest part of ditch portion 62 Distance.
In addition, the width W (units of protrusion 61：μm) refer to ditch portion 62 by clamping protrusion 61 lowest part vertical line Beeline between (line in the direction vertical with the face direction of supporting substrate 10).
In addition, polarisation according to liquid crystal etc., white point unevenness may be observed to that stain is uneven or stain unevenness quilt sometimes It is viewed as white point unevenness.
Hereinafter, to the manufacturing method of supporting substrate of tape tree lipid layer, the manufacturing method of glass laminate and electronic equipment Manufacturing method illustrates, in its declarative procedure, also to the supporting substrate of tape tree lipid layer of the present invention and the glass of the present invention Laminated body illustrates.
It should be noted that it is following, in Fig. 2~Fig. 5 in Fig. 1~Fig. 5 referred in explanation, omit in Fig. 6~Fig. 8 The diagram of the drop 51, protrusion 61 and the ditch portion 62 that are illustrated etc..
[supporting substrate and its manufacturing method of tape tree lipid layer]
Fig. 1 is the flow chart of the manufacturing process in the manufacturing method for the supporting substrate for representing tape tree lipid layer.As shown in Figure 1, The manufacturing method of the supporting substrate of tape tree lipid layer possesses painting process S102, moves into process S104, the 1st heating process S106, removes Go out process S108 and the 2nd heating process S110.
The material and its step that are used in each process are described in detail below.First, painting process S102 is carried out It is described in detail.
(manufacturing method of the supporting substrate of tape tree lipid layer)
＜ painting process ＞
Painting process S102 is following process：By the curable silicone composition containing curable silicone and solvent It is coated on supporting substrate, curable silicone composition layer is formed on supporting substrate, obtains possessing supporting substrate and curing The supporting substrate with curability layer of property silicone composition strata.By implementing process S102, as shown in (A) of Fig. 2, propping up Curable silicone composition layer 12 is formed on support group plate 10, obtains the supporting substrate 14 with curability layer.
Hereinafter, first, the material (supporting substrate, curable silicone composition) used in this process S102 is carried out detailed It describes in detail bright, the step of process S102 is described in detail thereafter.
(supporting substrate)
Supporting substrate 10 have surface and 2, back side interarea, act synergistically with aftermentioned silicone resin layer 16, support and Strengthen aftermentioned glass substrate 20, the manufacture electronics in aftermentioned component formation process (manufacturing process of electronic device member) Deformation, damage, breakage of glass substrate 20 etc. is prevented when equipment is with component.In addition, use the previous thin glass substrate of thickness ratio When, by the way that the glass laminate with previous glass substrate same thickness is made, it can use and be suitble in component formation process Manufacturing technology, manufacturing equipment in the glass substrate of previous thickness, this is also the first purpose using supporting substrate 10.
As supporting substrate 10, such as use metallic plates, the ceramic wafers such as glass plate, plastic plate, SUS plates etc..Component is formed When process is with heat treatment, supporting substrate 10 preferably by and the small material of difference of linear expansion coefficient of glass substrate 20 formed, more It is preferred that it is formed by the material identical with glass substrate 20.That is, preferably supporting substrate 10 is glass plate.Particularly preferred supporting substrate 10 For the glass plate formed by the glass material identical with glass substrate 20.
The thickness of supporting substrate 10 can be thicker than glass substrate 20, can also be thinner than glass substrate 20.Preferably, according to Thickness, the thickness of silicone resin layer 16 and the thickness of glass laminate of glass substrate 20 selects supporting substrate 10 Thickness.For example, be designed as handling the substrate of thickness 0.5mm in current component formation process, and glass substrate 20 The sum of the thickness of thickness and silicone resin layer 16 for 0.1mm in the case of, the thickness of supporting substrate 10 is set to 0.4mm. Under normal conditions, the thickness of supporting substrate 10 is preferably 0.2~5.0mm.
In supporting substrate 10 in the case of glass plate, for being easily processed, be not likely to produce the reasons such as crackle, glass plate Thickness is preferably more than 0.08mm.In addition, for when being removed after electronic device member is formed it is expected appropriateness flexure and The reasons why rigidity not cracked, the thickness of glass plate is preferably below 1.0mm.
Supporting substrate 10 and average linear expansion coefficient (hereinafter referred to as " average line of the glass substrate 20 at 25~300 DEG C The coefficient of expansion ") difference be preferably 500 × 10-7/ DEG C below, more preferably 300 × 10-7/ DEG C below, further preferably 200 ×10-7/ DEG C below.If difference is excessive, when the heating in component formation process cools down, glass laminate may be caused violent Ground warpage or glass substrate 20 and the supporting substrate 18 of aftermentioned tape tree lipid layer are peeling-off.Glass substrate 20 material with In the case of the material identical of supporting substrate 10, it can inhibit to lead to the problem of such.
(curable silicone composition)
Curable silicone composition at least contains curable silicone and solvent.As described later, by by the curability Silicon composition is coated on supporting substrate 10, can obtain the curable silicone composition containing curable silicone Layer.
Hereinafter, material contained in said composition is described in detail.
Curable silicone is to cure and become the compound or composition of organic siliconresin.Such curable silicone According to its curing mechanism be classified as condensation reaction type organosilicon, addition reaction-type organosilicon, ultraviolet hardening organosilicon and Electron ray curing type organosilicon etc., it is any number of to use.Wherein, preferred addition reaction-type organosilicon.It is this is because, solid The degree that fissility when easily, forming silicone resin layer is reacted in change is good, and heat resistance is also high.
Addition reaction-type organosilicon is occurred admittedly comprising host agent and crosslinking agent, in the presence of the catalyst such as platinum group catalyst The composition of the curability of change.The curing of addition reaction-type organosilicon is promoted by heating.Addition reaction-type organosilicon In host agent be preferably be bonded to silicon atom alkenyl (vinyl etc.) organopolysiloxane (i.e. organic poly- silica of alkenyl Alkane.Wherein preferred straight-chain), alkenyl etc. becomes crosslinking points.Crosslinking agent in addition reaction-type organosilicon is preferably to have bonding In organopolysiloxane (the i.e. organic hydrogen polysiloxanes of the hydrogen atom (silicon hydrogen-based) of silicon atom.Wherein preferred straight-chain), silicon hydrogen Base etc. becomes crosslinking points.
Addition reaction-type organosilicon carries out addition reaction to cure by the crosslinking points of host agent and crosslinking agent.Need what is illustrated It is that from the aspect of the heat resistance from cross-linked structure is superior, preferably organic hydrogen polysiloxanes are bonded to silicon atom Hydrogen atom compared with the alkenyl of olefinic organic based polysiloxane molar ratio be 0.5~2.
Solvent is included in curable silicone composition.Solvent is preferably capable easily making various composition dissolving and energy The solvent of enough removals of easily volatilizing.Specifically it may be exemplified for example：Butyl acetate, heptane, 2-HEPTANONE, 1- methoxy-2-propanols Acetic acid esters, toluene, dimethylbenzene, THF, chloroform etc..Wherein, preferred saturated hydrocarbons, can use by various saturated hydrocarbons (straight-chain saturation Hydrocarbon, branched saturated hydrocarbons, ester ring type saturated hydrocarbons) the one kind or two or more various saturated hydrocarbon solvents essentially formed.It such as can It enumerates：Isopar G (Exxon Mobil Corporation manufactures), Isopar L (Exxon Mobil Corporation systems Make), Isopar H (Exxon Mobil Corporation manufactures), Isopar M (Exxon Mobil Corporation systems Make), NORPAR 13 (Exxon Mobil Corporation manufactures), (the Exxon Mobil Corporation of NORPAR 15 Manufacture), EXXSOL D40 (Exxon Mobil Corporation manufactures), EXXSOL D60 (Exxon Mobil Corporation manufacture), EXXSOL D80 (Exxon Mobil Corporation manufactures), Neothiozol (center be melted into Co., Ltd. manufacture), IP solvent 2028 (Idemitsu Kosen Co., Ltd.'s manufacture).
Wherein, as described later, from the aspect of solvent is readily volatilized from the 1st heating process, it is preferable to use initial boiling points (under atmospheric pressure) is less than 210 DEG C of solvent.
When contained curable silicone is addition reaction-type organosilicon in curable silicone composition, curability is organic Catalyst (especially platinum group metal series catalysts), reaction suppressor can also be further included in silicon composition.
Platinum group metal series catalysts (silyl hydride with platinum metal catalysts) are for gathering above-mentioned organic alkenyl Alkenyl and the catalysis of silyl hydrideization reaction progress/promotion of the hydrogen atom in above-mentioned organic hydrogen polysiloxanes in siloxanes Agent.As platinum group metal series catalysts, the catalyst such as platinum group, palladium system, rhodium system can be included, from economy, reactivity in terms of Consider, particularly preferably using platinum group catalyst.
Reaction suppressor (silyl hydride with reaction suppressor) is to inhibit above-mentioned catalyst (especially platinum group metal system Catalyst) catalytic activity at normal temperatures, extend curable silicone composition usage time so-called working life extension agent (also referred to as delayed-action activator).As reaction suppressor, such as various organonitrogen compounds, organic phosphorus compound, alkynes can be included Based compound, oxime compound, organochlorine compound etc..It is particularly suitable for as alkyne series compound (such as the first silicon of alkynol class and alkynol Alkylates).
(the step of process)
The method that above-mentioned curable silicone composition is coated on supporting substrate is not particularly limited, public affairs may be employed The method known.For example, as coating method, can include：Spraying process, die coating method, spin-coating method, Dipcoat method, rolling method, Stick coating method, silk screen print method, gravure coating process etc..It can be fitted according to the species of curable silicone composition from these methods Work as selection.
It should be noted that the thickness of curable silicone composition layer is not particularly limited, so as to being had The mode of the silicone resin layer of aftermentioned suitable depth suitably adjusts.
＜ moves into process ＞
It is following process to move into process S104：The supporting substrate of loading belt curability layer into heat treatment apparatus, The supporting substrate with curability layer is loaded in supporting pin in heat treatment apparatus.By implementing this process, as shown in figure 3, band On the top (top) for the supporting pin 34 that the supporting substrate 14 of curability layer is positioned in heat treatment apparatus 30.It needs to illustrate , the back side of the supporting substrate 10 in the supporting substrate 14 of 34 supporting part curability layer of supporting pin (has curable silicone The face of the opposite side of composition layer side).
Hereinafter, the heat treatment apparatus 30 used in this process is described in detail first.
Fig. 3 is the constructed profile for an example for representing heat treatment apparatus 30.Heat treatment apparatus 30 is for after implementation The device of heating in the 1st heating process S106 stated is so-called predrying device.
Heat treatment apparatus 30 possesses the support for being used to support the supporting substrate with curability layer 14 in heating chamber 32 Pin 34, the supporting table 36 for being used to support supporting pin 34 and configuration are in the plate on the top of the supporting substrate 14 with curability layer Heating plate 38.
2 supporting pins 34 are merely illustrated in Fig. 3, but its radical is not particularly limited.
In addition, the exhaust pipe 40 being connected with exhaust means (not shown) is provided on the top of heat treatment apparatus 30, from Gas supply port (not shown) is supplied to air in heat treatment apparatus 30, volatilizees from curable silicone composition layer 12 Solvent etc. is discharged from exhaust pipe 40.And then it is provided in the side of heat treatment apparatus 30 for by the support with curability layer The carrying-in/carrying-out mouth 42 of 14 carrying-in/carrying-out of substrate.
Supporting substrate 14 with curability layer is moved into heating by the step of as this process S104 via carrying-in/carrying-out mouth 42 In processing unit 30, the supporting substrate 14 with curability layer is positioned in supporting pin 34.
Also, when the supporting substrate 14 with curability layer is moved into heat treatment apparatus 30 as described above, first, Other supporting substrates 14 with curability layer that first heating (preliminary drying processing) in same heat treatment apparatus 30 is finished It is taken out of via carrying-in/carrying-out mouth 42.
If at this point, due to heating vaporized solvent in the form of steam full of in heat treatment apparatus 30, the solvent Steam also can leak into outside from carrying-in/carrying-out mouth 42 sometimes.Leak into external solvent vapour cool down sometimes and with drop 51 Form is dripped, and is attached to the curable silicone that will move into the supporting substrate 14 with curability layer in heat treatment apparatus 30 (with reference to Fig. 6) on the surface 12a of composition layer 12.
The 1st heating process ＞ of ＜
1st heating process S106 is following process：It is combined in the curable silicone of the supporting substrate with curability layer Nitride layer top configures heating plate, while being exhausted, while being carried out below the 1st temperature to the supporting substrate with curability layer at heating Reason, removal remain in the solvent in curable silicone composition layer.This process S106 is so-called preliminary drying process, passes through implementation This process S106 can remove the solvent remained in curable silicone composition layer and remove and by being added with the temperature being suitble to Heat and make curable silicone composition surface smoothing.After so implementing preliminary drying processing, in aftermentioned 2nd heating process S110 Baking is handled after middle implementation, remaining solvent in the silicone resin layer that thus further removal is formed, so as to which surface planar becomes It is more flat, it is further improved with the adaptation of glass substrate.
In this process S106, as shown in figure 3, heating plate 38 is configured on the top of the supporting substrate 14 with curability layer, it is real Apply heat treatment.It should be noted that as shown in figure 3, heating plate 38 and curable silicone composition layer 12 it is opposite to.
Heating plate 38 and the distance of curable silicone composition layer 12 are not particularly limited, from self-curing organosilicon From the aspect of composition layer 12 effectively removes solvent, the decomposition for inhibiting curable silicone, preferably 30~120mm is more excellent Select 60~90mm.
The condition of heating as this process S106, according to the species of used solvent, curable silicone come Appropriate selection optimal conditions, from the removal of solvent is more excellent, surface of curable silicone composition layer become it is flat and From the aspect of the decomposition for further inhibiting curable silicone, the 1st temperature is preferably -30 DEG C of initial boiling point~solvent of solvent In the range of+30 DEG C of initial boiling point.In other words, the 1st temperature X preferably satisfies following relational expression.
Formula：+ 30 DEG C of the initial boiling point of -30 DEG C of the initial boiling point of solvent≤temperature X≤solvent
It should be noted that the initial boiling point of solvent refers to the value measured according to JIS K0066 (1992).
And then as the 1st temperature in this process S106, from the surface of curable silicone composition layer become it is flat and It it is preferably less than 210 DEG C and from the aspect of further inhibiting the decomposition of curable silicone.Wherein, from can further press down It is preferably 150~210 DEG C from the aspect of the cohesional failure of silicone resin layer processed, more preferably 180~205 DEG C.
Heating time is not particularly limited, is suitably selected most according to the species of used solvent, curable silicone Good condition is preferably 1~5 minute from the aspect of the removal and productivity of residual solvent, more preferably 2~3 points Clock.
In this process S106, heated when implementing and being vented.As shown in figure 3, it is set in heat treatment apparatus 30 Exhaust pipe 40 is equipped with, when heating, is exhausted with the exhaust pipe 40.Capacity is not particularly limited, from solvent It is preferably more than 1500L/min from the aspect of removal is more effectively carried out, more preferably more than 1800L/min.Do not have to the upper limit It is particularly limited to, is preferably below 3000L/min from the aspect of the performance and economy of device, more preferably 2500L/min Below.
It, can be from gas supply port supply gas (not shown) when implementing this process S106.It, can by supply gas Effectively remove the solvent flashing in heating chamber 32.The species of gas to being supplied is not particularly limited, and can include Non-active gas such as air, nitrogen etc..The gas supplied can also be heating air.
The quantity delivered of gas is not particularly limited, from the aspect of the removal of solvent is more effectively carried out, is preferably More than 1500L/min, more preferably more than 1800L/min.The upper limit is not particularly limited, from the performance of device and economy From the aspect of, it is preferably below 3000L/min, more preferably below 2500L/min.
In addition, as the gas supplied, it is more excellent from the removal of the residual solvent in curable silicone composition layer From the aspect of different, air is preferably heated.The temperature for heating air is not particularly limited, from the removal and curability of solvent It it is preferably 100~150 DEG C from the aspect of the surface smoothness of silicone composition strata.
In the manufacture of the supporting substrate of the tape tree lipid layer of the present invention, press down by adjusting the quantity delivered and capacity of gas The drop of solvent processed is less than 3 × 10 to the ratio between the attachment of silicone resin layer, the height H and width W that make aftermentioned protrusion H/W-5。
＜ takes out of process ＞
It is the process that self-heating processing unit takes out of the supporting substrate with curability layer to take out of process S108.
In this process S108, via the carrying-in/carrying-out mouth 42 of heat treatment apparatus 30, the supporting substrate 14 with curability layer It is taken out of in self-heating processing unit 30.That is, carrying-in/carrying-out mouth 42 is opened, recycling is with curability layer in self-heating processing unit 30 Supporting substrate 14.
The 2nd heating process ＞ of ＜
2nd heating process S110 is following process：Process is taken out of to above-mentioned with 2nd temperature higher than above-mentioned 1st temperature The supporting substrate with curability layer recycled in S108 is heated, and obtains silicone resin layer.This process S110 is institute The rear baking processing of meaning, the solvent in curable silicone composition layer is further removed by implementing this process S110, so as to The curing of curable silicone is carried out, obtains silicone resin layer.By implementing this process, the tool as shown in (B) of Fig. 2 is obtained The supporting substrate 18 of the tape tree lipid layer of standby supporting substrate 10 and silicone resin layer 16.
The method of heating in this process S110 is not particularly limited, can use and dress is heated well known to baking oven etc. It puts.
The heating of this process S110 is implemented at a temperature of the 1st temperature than above-mentioned 1st heating process S106 is high.It is right 1st temperature is not particularly limited with the 2nd temperature difference, is suitably selected according to the species of used curable silicone, solvent Optimal conditions are preferably 10~100 DEG C from the aspect of the further cohesional failure for inhibiting silicone resin layer, more excellent Elect 30~70 DEG C as.
Wherein, as the 2nd temperature, preferably greater than 210 DEG C.From self-curing silicone composition strata 12 remove solvent, And from the aspect of curing reaction is superior, 210 DEG C are preferably greater than and for less than 250 DEG C.Heating time is according to used material The appropriate selection optimal conditions of material are preferably 10~120 minutes from the aspect of productivity and the removal of solvent, more excellent It elects as 20~60 minutes.
(supporting substrate of tape tree lipid layer)
By via above-mentioned operation, obtaining the silicone resin layer for possessing supporting substrate 10 He being fixed on supporting substrate 10 The supporting substrate 18 of 16 tape tree lipid layer.
The supporting substrate 18 of the tape tree lipid layer is for the laminated glass substrate 20 on silicone resin layer 16 as illustrated in fig. 4 And manufacture glass laminate 100.
Silicone resin layer 16 in the supporting substrate 18 of tape tree lipid layer has by implementing curability on supporting substrate 10 The curing reaction of machine silicon composition layer 12 and be fixed in the one side of supporting substrate 10, and can with aftermentioned glass substrate 20 It removes closely sealed.Silicone resin layer 16 be used for prevent glass substrate 20 position offset until into be about to glass substrate 20 with branch Support group plate 10 it is separated operation and be easily peeled off by lock out operation from glass substrate 20, prevent 20 grade of glass substrate because Lock out operation and it is damaged.In addition, silicone resin layer 16 is fixed in supporting substrate 10, the silicone resin layer in lock out operation 16 do not remove with supporting substrate 10, the supporting substrate 18 of tape tree lipid layer are obtained by lock out operation.
Silicone resin layer 16 it is strippingly close with the 1st interarea of glass substrate 20 with the surface that glass substrate 20 contacts It closes.In the present invention, the property that can be easily peeled off on 16 surface of silicone resin layer is known as release performance (fissility).
In the present invention, above-mentioned fixation and above-mentioned strippable closely sealed deposited in peel strength (removing required stress) In difference, fixed peel strength is bigger than closely sealed.In addition, it is strippable it is closely sealed also refer to, can remove while not make fixed face It is removed with being peeling.It specifically refers to, in the glass laminate of the present invention, into being about to glass substrate 20 and supporting substrate During 10 separated operation, remove in closely sealed face and do not removed in fixed face.Therefore, it is separated into being about to glass laminate During the operation of glass substrate 20 and supporting substrate 10, glass laminate is separated into the branch support group of glass substrate 20 and tape tree lipid layer This 2 part of plate 18.
That is, silicone resin layer 16 to the combination power on the surface of supporting substrate 10 than silicone resin layer 16 to glass substrate The combination power of 20 the 1st interarea is with respect to higher.
The thickness of silicone resin layer 16 is not particularly limited, is preferably 2~100 μm, more preferably 3~50 μm, into One step is preferably 7~20 μm.When the thickness of silicone resin layer 16 is such scope, even if silicone resin layer 16 and glass There are bubble, foreign matter between substrate 20, it can also inhibit glass substrate 20 and be deformed defect.In addition, silicone resin layer 16 Thickness it is blocked up when, formation needs time and materials, thus uneconomical, and heat resistance reduces sometimes.In addition, organic siliconresin When the thickness of layer 16 is excessively thin, silicone resin layer 16 and the adaptation of glass substrate 20 reduce sometimes.
Then, to be attached with the state of drop 51 (with reference to Fig. 6) in process S104 is moved into via the 1st heating process S106, take out of in the supporting substrate 18 for the tape tree lipid layer that process S108 and the 2nd heating process S110 are obtained, as described above, sometimes Protrusion 61 is formed in the surface 16a of silicone resin layer 16 (with reference to Fig. 7).
But in the present invention, the height H (units of protrusion 61：μm) and width W (units：μm) the ratio between H/W be less than 3 × 10-5.The scope is met by the ratio H/W for making protrusion 61, even if so as to there are protrusion 61, can also inhibit the uneven production of display It is raw.
For example, even if the height of protrusion 61 is larger, also meeting above-mentioned model with a degree of width and ratio H/W When enclosing, it can also inhibit the uneven generation of display.
The ratio between the height H and width W of protrusion 61 H/W is not particularly limited as long as above range is met.
And then the height H of protrusion 61 is preferably less than 0.10 μm, more preferably less than 0.05 μm.Height H is not in the scope When, the lamellar spacing (cell gap) of LCD narrows, and it is uneven easily to generate display, and in the range when, can further inhibit aobvious Show uneven generation.
On the other hand, the width W of protrusion 61 is preferably 3 × 103Below μm, more preferably 1 × 103Below μm.Width W is not In the scope, the scope that the lamellar spacing of LCD narrows becomes larger, and it is uneven easily to generate display, and in the range when, can be into one Step inhibits the uneven generation of display.
It should be noted that the number of protrusion 61 is preferably less than 20 in the range of 1300mm × 1100mm, it is more excellent Elect less than 15 as, further preferably less than 10.
[glass laminate and its manufacturing method]
(manufacturing method of glass laminate)
As described above, it is used for via the supporting substrate of tape tree lipid layer obtained from above-mentioned operation on silicone resin layer upper strata Laminated glass substrate and manufacture glass laminate.
The method for manufacturing the glass laminate is not particularly limited, following lamination process is preferably implemented：In resin Laminated glass substrate on silicone resin layer in the supporting substrate of layer obtains having supporting substrate, silicone resin layer successively With the glass laminate of glass substrate.
Hereinafter, the step of lamination process, is described in detail.
＜ lamination process ＞
Lamination process is following process：On the surface of silicone resin layer 16 in the supporting substrate 18 of tape tree lipid layer Laminated glass substrate 20 is possessed the glass laminate of supporting substrate 10, silicone resin layer 16 and glass substrate 20 successively 100.More specifically, as shown in figure 4, with the surface 16a of silicone resin layer 16 and the opposite side of 10 side of supporting substrate and 1st interarea 20a of the glass substrate 20 with the 1st interarea 20a and the 2nd interarea 20b is as lamination surface, by silicone resin layer 16 It is stacked with glass substrate 20, obtains glass laminate 100.
For used glass substrate 20, it is described in detail later.
It should be noted that laminated glass substrate 20 manufactures on the silicone resin layer 16 with protrusion 61 as described above During glass laminate 100, glass substrate 20 is deformed with following the shape of protrusion 61, in the 2nd interarea 20b of glass substrate 20 It is also the same protrusion 71 occur (with reference to Fig. 8).Whens making liquid crystal panel etc. using such glass laminate 100, confirm sometimes Display is uneven, but in the present invention, by the way that the ratio between protrusion 61 H/W is made to be less than 3 × 10-5, it is uneven that display can be inhibited.
The method that glass substrate 20 is layered on silicone resin layer 16 is not particularly limited, may be employed well known Method.
Such as the side for being overlapped glass substrate 20 on the surface of silicone resin layer 16 under atmospheric pressure environment can be included Method.It should be noted that as needed on the surface of silicone resin layer 16 be overlapped glass substrate 20 after, can use roller, Pressing machine makes glass substrate 20 be crimped on silicone resin layer 16.By using the crimping that roller or pressing machine carry out, compare appearance Mixed bubble easily between removal silicone resin layer 16 and glass substrate 20, so it is preferred that.
When being crimped silicone resin layer 16 and glass substrate 20 using vacuum layer platen press, vacuum pressing, it can inhibit Bubble is mixed into, it is good closely sealed to ensure, thus more preferably.By being crimped under vacuo, even if the bubble that residual is small, gas Bubble will not grow up due to heating, also have the advantages that the deformation defect for not easily leading to glass substrate 20.
During laminated glass substrate 20, preferably the surface of pair glass substrate 20 contacted with silicone resin layer 16 carries out abundant Cleaning is stacked under the high environment of cleanliness factor.Cleanliness factor is higher, and the flatness of glass substrate 20 is better, thus preferably.
It should be noted that after laminated glass substrate 20, as needed, pre-anneal treatment (heating can also be carried out Processing).By carrying out the pre-anneal treatment, the glass substrate 20 of stacking improves the adaptation of silicone resin layer 16, can Appropriate peel strength is obtained, the position offset etc. of electronic device member is not likely to produce in aftermentioned component formation process, The productivity of electronic equipment improves.
The condition of pre-anneal treatment can according to the species of used silicone resin layer 16 suitable for select optimum condition, from From the aspect of making the peel strength between glass substrate 20 and silicone resin layer 16 more appropriate, it is preferred that 300 DEG C with The heating of 5 minutes or more (being preferably 5~30 minutes) is carried out under conditions of upper (being preferably 300~400 DEG C).
(glass substrate)
1st interarea 20a of glass substrate 20 connects with silicone resin layer 16, in the opposite side of 16 side of silicone resin layer The 2nd interarea 20b be provided with electronic device member.
The species of glass substrate 20 can be general glass substrate, such as can enumerate the display device of LCD, OLED etc Glass substrate etc..The chemical resistance of glass substrate 20, resistance to excellent moisture permeability, and percent thermal shrinkage is low.As thermal contraction The index of rate can use the linear expansion coefficient of JIS R 3102 (nineteen ninety-five revision) defined.
When the linear expansion coefficient of glass substrate 20 is big, since aftermentioned component formation process understands heat tracing processing mostly, Therefore, various unfavorable conditions are easily generated.For example, when forming thin film transistor (TFT) (TFT) on glass substrate 20, if to heating Under form the glass substrate 20 of TFT and cooled down, then there is the position offset for causing TFT due to the thermal contraction of glass substrate 20 Excessive worry.
Glass substrate 20 is obtained by being melted glass raw material and melten glass being shaped to plate.Such shaping Method can be general forming method, such as can use under float glass process, fusion method, discharge orifice and draw method (slot down draw Process), Fourcault's method (fourcault process), Lu Baifa (Lubbers process) etc..In addition, particularly thickness Relatively thin glass substrate 20 (horizontal sheet process) can be molded and be obtained by the following method：The glass of plate will be temporarily shaped to Plastic temperature is heated to, it is stretched to make its thinning by the means such as stretching.
The species of the glass of glass substrate 20 is not particularly limited, preferably alkali-free pyrex, pyrex, sodium Lime glass, high silica glass, other are with silica oxide system glass as main component.As oxide system glass, preferably change Calculate for oxide when silica content be the mass % of 40 mass %~90 glass.
As the glass of glass substrate 20, using the species of suitable electronic device member, the glass of its manufacturing process.Example Such as, since the dissolution of alkali metal component easily has an impact liquid crystal, glass substrate of liquid crystal panel is by being substantially free of The glass (alkali-free glass) of alkali metal component forms (still, usually containing alkaline earth metal component).In this way, the glass of glass substrate 20 Glass can suitably be selected according to the species for the equipment applied and its manufacturing process.
From the viewpoint of the slimming and/or lightweight of glass substrate 20, the thickness of glass substrate 20 is preferably 0.3mm Hereinafter, below 0.15mm, further preferably below 0.10mm are more preferably.In the case of for below 0.3mm, glass can be assigned 20 good flexibility of glass substrate.In the case of for below 0.15mm, glass substrate 20 can be rolled into a roll.
In addition, for easy to manufacture glass substrate 20, it is easily processed the reasons such as glass substrate 20, the thickness of glass substrate 20 Preferably more than 0.03mm.
It should be noted that glass substrate 20 can also be formed by more than two layers, in this case, the material for forming each layer can To be same material or different materials.In addition, in this case, " thickness of glass substrate 20 " refers to all layers Overall thickness.
As the composition of glass, consisting of can be used.That is, represented with the quality percentage of oxide benchmark, preferably Contain SiO2：50~66%, Al2O3：10.5~24%, B2O3：0~12%, MgO：0~8%, CaO：0~14.5%, SrO：0 ~24%, BaO：0~13.5%, MgO+CaO+SrO+BaO：9~29.5%, ZrO2：0~5% alkali-free glass.
In addition, being represented with the quality percentage of oxide benchmark, further preferably contain SiO2：58~66%, Al2O3：15~ 22%th, B2O3：5~12%, MgO：0~8%, CaO：0~9%, SrO：3~12.5%, BaO：0~2%, MgO+CaO+SrO+ BaO：9~18%, ZrO2：0~5% alkali-free glass.
In addition, being represented with the quality percentage of oxide benchmark, further preferably contain SiO2：50~61.5%, Al2O3：10.5 ~18%, B2O3：7~10%, MgO：2~5%, CaO：0~14.5%, SrO：0~24%, BaO：0~13.5%, MgO+CaO +SrO+BaO：16~29.5%, ZrO2：0~5% alkali-free glass.
＜ lamination process ＞
It should be noted that the manufacturing method of glass laminate can also possess grinding process.Grinding process is to being stacked The process that 2nd interarea 20b of the glass substrate 20 in the glass laminate 100 obtained in process is ground, thereby, it is possible to will The protrusion 71 for the glass substrate 20 followed the protrusion 61 of silicone resin layer 16 and occurred removes.
The method of grinding is not particularly limited, well known method may be employed, can using mechanical lapping, (physics is ground Mill) or chemical grinding.It, can be with the following method as mechanical lapping：It blows blasting method that ceramic abrasive grain is ground, make With abrasive sheet, grinding stone grinding, the chemical mechanical grinding (CMP of abrasive particle and chemical solvent is applied in combination：Chemical Mechanical Polishing) method etc..
In addition, as chemical grinding (also referred to as wet etching), the surface using chemical solution to glass substrate can be utilized The method being ground.
(glass laminate)
Glass laminate 100 is that have supporting substrate 10, glass substrate 20 and the organic siliconresin being present between them The laminated body of layer 16.The one side of silicone resin layer 16 connects with supporting substrate 10 and another side and the 1st of glass substrate 20 Interarea 20a connects.
Using the glass laminate 100 until aftermentioned component formation process.That is, using the glass laminate 100 until The electronic device members such as liquid crystal display device are formed on the 2nd interarea 20b surfaces of its glass substrate 20.Afterwards, form The glass laminate of electronic device member is separated into the supporting substrate 18 and electronic equipment of tape tree lipid layer, the branch of tape tree lipid layer Support group plate 18 does not become the part for forming electronic equipment.New glass substrate can be stacked on the supporting substrate 18 of tape tree lipid layer 20, it forms new glass laminate 100 and reuses.
Supporting substrate 10 and the interface of silicone resin layer 16 have peel strength (x), in supporting substrate 10 and organosilicon When the interface of resin bed 16 applies the stress more than the peeling direction of peel strength (x), in supporting substrate 10 and organic siliconresin The interface of layer 16 is peeling.Silicone resin layer 16 and the interface of glass substrate 20 have peel strength (y), in organosilicon tree When the interface of lipid layer 16 and glass substrate 20 applies the stress more than the peeling direction of peel strength (y), in silicone resin layer 16 are peeling with the interface of glass substrate 20.
As described above, in glass laminate 100 (laminated body for also referring to aftermentioned having electronic equipment component), above-mentioned stripping It is bigger (height) than above-mentioned peel strength (y) from intensity (x).Therefore, if making supporting substrate 10 and glass to the application of glass laminate 100 The stress in the direction that substrate 20 is removed, then glass laminate 100 of the invention is in silicone resin layer 16 and glass substrate 20 Interface peel and the supporting substrate 18 for being separated into glass substrate 20 and tape tree lipid layer.
That is, silicone resin layer 16 is fixedly supported on substrate 10 and forms the supporting substrate 18 of tape tree lipid layer, glass base Plate 20 is strippingly closely sealed on silicone resin layer 16.
Peel strength (x) is sufficiently high preferably compared with peel strength (y).Peel strength (x) is improved to refer to improve organosilicon Resin bed 16 can maintain compared with to the adhesive force of glass substrate 20 adhesive force of supporting substrate 10 after a heating treatment Relatively high adhesive force.
Silicone resin layer 16 is to the raising of the adhesive force of supporting substrate 10 as described above, by making curable silicone group Conjunction nitride layer 12 is crosslinked on supporting substrate 10 to be formed by curing silicone resin layer 16 and reaches.Pass through bonding during crosslinking curing Power can form the silicone resin layer 16 combined with high-bond with supporting substrate 10.
On the other hand, the solidfied material of curable silicone composition layer 12 to the combination power of glass substrate 20 usually than above-mentioned The combination power generated during crosslinking curing is low.
Glass laminate 100 can be used for various uses, for example, can enumerate to manufacture aftermentioned display device panel, PV, thin-film secondary battery, surface are formed with purposes of the electronic units such as the semiconductor crystal wafer of circuit etc..It it should be noted that should In purposes, glass laminate 100 is often exposed on hot conditions (such as 360 DEG C or more) more than when small (such as 1).
Here, display device is included with panel：LCD, OLED, Electronic Paper, plasma display, field emission face Plate, quantum dot LED panel, MEMS (microelectromechanical systems, Micro Electro Mechanical Systems) fast shop front Plate etc..
[electronic equipment (glass substrate of band member) and its manufacturing method]
Using electronic equipment of the above-mentioned glass laminate manufacture comprising glass substrate and electronic device member (band member Glass substrate).
The manufacturing method of the electronic equipment is not particularly limited, from the aspect of the productivity of electronic equipment is excellent, It is preferably as follows method：Electronic device member is formed on glass substrate in above-mentioned glass laminate, manufactures having electronic equipment With the laminated body of component, using the glass substrate side interface of silicone resin layer as release surface, by obtained having electronic equipment structure The laminated body of part is separated into electronic equipment and the supporting substrate of tape tree lipid layer.
Hereinafter, electronic device member will be formed on the glass substrate in above-mentioned glass laminate and manufactures having electronic and set The process of the laminated body of spare component is known as component formation process, will be using the glass substrate side interface of silicone resin layer as stripping Face, the process for being separated into electronic equipment and the supporting substrate of tape tree lipid layer with the laminated body of component by having electronic equipment are known as separating Process.
Hereinafter, the material used in each process and step are described in detail.
(component formation process)
Component formation process is formed on the glass substrate 20 in the glass laminate 100 obtained in above-mentioned lamination process The process of electronic device member.More specifically, as shown in (A) of Fig. 5, (expose in the 2nd interarea 20b of glass substrate 20 Surface) on form electronic device member 22, obtain the laminated body 24 of having electronic equipment component.
First, the electronic device member 22 used in this process is described in detail, thereafter to process the step of into Row is described in detail.
＜ electronic device members (functional element) ＞
Electronic device member 22 is formed on the glass substrate 20 in glass laminate 100, is to form electronic equipment At least part of component.More specifically, as electronic device member 22, display device panel, solar energy can be enumerated It is (such as aobvious that battery, thin-film secondary battery or surface are formed with the component used in electronic units such as the semiconductor crystal wafer of circuit etc. Showing device component, component used for solar batteries, thin-film secondary battery component, electronic component-use circuit).
For example, as component used for solar batteries, for silicon type, the transparent electrodes such as the tin oxide of anode can be enumerated, use p Silicon layer and the metal of cathode that layer/i layers/n-layer represents etc., can enumerate and compound type, dye sensitization type, quantum point type in addition Etc. corresponding various components etc..
In addition, as thin-film secondary battery component, for type lithium ion, the metal or metal of anode and cathode can be enumerated The transparent electrodes such as oxide, the lithium compound of electrolyte layer, the metal of current collection layer, resin as encapsulated layer etc., can lift in addition Go out with the corresponding various components such as ni-mh type, polymer-type, ceramic electrolyte type etc..
In addition, as electronic component-use circuit, CCD, CMOS can enumerate the metal of conductive part, the silica of insulation division, nitrogen SiClx etc. can be enumerated and the various sensors such as pressure sensor/acceleration transducer, rigid printed base plate, flexible printing in addition Corresponding various components such as substrate, rigid and flexibility printed base plate etc..
The step ＞ of ＜ processes
Above-mentioned having electronic equipment is not particularly limited with the manufacturing method of the laminated body 24 of component, it can be according to electronics The species of the member of formation of equipment component, using conventionally known method glass laminate 100 glass substrate 20 the 2nd Electronic device member 22 is formed on interarea 20b.
It should be noted that electronic device member 22 may not be the 2nd interarea for being eventually formed in glass substrate 20 The whole (hereinafter referred to as " all components ") of the component of 20b, but a part (hereinafter referred to as " the part structure of all components Part ").It can also will be from silicone resin layer 16 is removing, band is made in process afterwards in glass substrate with partial component The glass substrate (suitable with aftermentioned electronic equipment) of all components.
In addition, for glass substrates being removed from silicone resin layer 16, with all components, it can also be in its release surface (the 1st interarea 20a) forms other electronic device members.In addition it is also possible to the laminated body with all components is carried out to assemble it Afterwards, the supporting substrate 18 of tape tree lipid layer from the laminated body with all components is removed, manufactures electronic equipment.And then it can also make After two laminated body assembling electronic equipments with all components, by the supporting substrate 18 of two tape tree lipid layer from all structures The laminated body of part is removed, electronic equipment of the manufacture with two pieces of glass substrates.
For example, in case of manufacturing OLED, in order in the glass substrate 20 of glass laminate 100 and organosilicon tree (the 2nd interarea 20b for being equivalent to glass substrate 20) forms organic EL structures on the surface of 16 side opposite side of lipid layer, carries out such as Under various layers formed, processing：Form transparent electrode；And then hole injection layer, hole are deposited on the face for be formed with transparent electrode Transport layer, luminescent layer, electron transfer layer etc.；Form backplate；It is packaged using package board.Formed as these layers, Processing specifically, such as can enumerate film process, vapor deposition treatment, the processing of the bonding of package board etc..
In addition, for example, when manufacturing TFT-LCD, manufacturing method has such as inferior various processes：TFT formation process, On 2nd interarea 20b of the glass substrate 20 of glass laminate 100, using anti-corrosion liquid common using CVD method and sputtering method etc. Pattern is formed so as to form thin film transistor (TFT) (TFT) on metal film and metal oxide film that membrane formation process is formed etc.；CF formation process, On the 2nd interarea 20b of the glass substrate 20 of another glass laminate 100, form pattern using anti-corrosion liquid and form colour filter (CF)；Bonding process, by the laminated body of the band TFT obtained in TFT formation process and the band CF obtained in CF formation process Laminated body be stacked.
In TFT formation process, CF formation process, using known photoetching technique, etching technique etc., in glass substrate 20 The 2nd interarea 20b formed TFT, CF.At this moment, using anti-corrosion liquid as pattern formation coating fluid.
It should be noted that before TFT, CF is formed, it can also be as needed to the 2nd interarea 20b of glass substrate 20 It is cleaned.As cleaning method, known dry method can be used to clean, wet-cleaning.
In bonding process, make the colour filter of the thin film transistor (TFT) forming face of the laminated body with TFT and the laminated body with CF Forming face is opposite, is bonded using sealant (such as unit (cell) is formed with ultraviolet hardening sealant).Afterwards, exist Liquid crystal material is injected in the unit formed by the laminated body with TFT and the laminated body with CF.As injection liquid crystal material method, Such as there is decompression injection method, injection method is added dropwise.
(separation circuit)
Separation circuit is following process：As shown in (B) of Fig. 5, with the interface of silicone resin layer 16 and glass substrate 20 For release surface, it is separated by the laminated body 24 of the having electronic equipment component obtained in above-mentioned component formation process and is laminated with electricity Sub- the equipment glass substrate 20 (electronic equipment 26) of component 22 and the supporting substrate 18 of tape tree lipid layer are obtained comprising electronic equipment With component 22 and the electronic equipment 26 of glass substrate 20.
The electronic device member 22 on glass substrate 20 when removing is one of all member of formation needed for being formed In the case of part, remaining member of formation can also be formed on glass substrate 20 after isolation.
The method that the supporting substrate 18 of glass substrate 20 and tape tree lipid layer is removed is not particularly limited.Specifically, Such as sharp cutter shape object can be inserted at the interface of glass substrate 20 and silicone resin layer 16 and form rising for stripping Point and then water and the fluid-mixing of compressed air are blowed, so as to be removed.Preferably, with having electronic equipment component Laminated body 24 supporting substrate 10 be upside, 22 side of electronic device member be downside mode be arranged on platform, make electricity Sub- equipment (in the case where two surface layers are laminated with supporting substrate, is carried out) successively with 22 side vacuum suction of component on platform, Under the state, make 16 interface of cutter intrusion glass substrate 20- silicone resin layers first.Afterwards, inhaled using multiple vacuum cups Attached 10 side of supporting substrate, and successively vacuum cup is made to increase near the position for inserting cutter.As a result, in organic siliconresin The cohesional failure face at layer 16 and the interface of glass substrate 20, silicone resin layer 16 forms air layer, and the air layer is to interface, interior Poly- failure mechanics whole face extension, can easily remove supporting substrate 10.
In addition, supporting substrate 10 can be stacked with new glass substrate and manufacture glass laminate 100.
It should be noted that when laminated body 24 of the electronic equipment 26 from having electronic equipment component is separated, pass through profit It blowed with ion generator, control humidity, can further inhibit the fragment Electrostatic Absorption of silicone resin layer 16 in electricity Sub- equipment 26.
The manufacturing method of above-mentioned electronic equipment 26 is suitable for used in the mobile terminal of manufacture mobile phone, PDA etc Compact display apparatus.Display device is mainly LCD or OLED, as LCD, including TN types, STN types, FE types, TFT types, mim type, IPS types, VA types etc..It substantially can be suitable for passive driving types, the situation of the arbitrary display device of active-drive.
As the electronic equipment 26 manufactured in aforementioned manners, can enumerate with glass substrate and display device component Display device panel, the solar cell with glass substrate and component used for solar batteries, with glass substrate and film The thin-film secondary battery of secondary cell component, the electronic unit with glass substrate and electronic device member etc..As aobvious Showing device panel, including liquid crystal panel, organic EL panel, plasma display, field emission panel etc..
Embodiment
Hereinafter, the present invention is specifically described by embodiment etc., but the present invention and from these examples limit.
In following embodiment and comparative example, as glass substrate, the glass formed by alkali-free pyrex is used Plate (long 1320mm, wide 1120mm, thickness of slab 0.2mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name “AN100”).In addition, as supporting substrate, it is similary to use the glass plate (long 1360mm, the width that are formed by alkali-free pyrex 1170mm, thickness of slab 0.5mm, linear expansion coefficient 38 × 10-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").
1 ＞ of ＜ embodiments
First, after the surface of supporting substrate is cleaned with alkaline aqueous solution, cleaned with pure water, make its purifying.
Thereafter, die coating machine (coating speed is utilized：40mm/s, discharge rate：Aftermentioned solution X 8ml) is coated on branch support group On 1st interarea of plate, the layer (curable silicone for including uncured bridging property organopolysiloxane is set on supporting substrate Composition layer), obtain supporting substrate (the coated weight 20g/m with curability layer2)。
(solution X)
Will as ingredient (A) straight-chain vinyl methyl polysiloxanes (AZumax Company Limited. manufacture, Trade name " VDT-127 ", the viscosity at 25 DEG C are 700-800cP (centipoise), the vinyl in 1mol organopolysiloxanes Mol%：0.325) with as ingredient (B) straight-chain methylhydrogenpolysi,oxane (AZumax Company Limited. manufacture, Trade name " HMS-301 ", the viscosity at 25 DEG C are 25-35cP (centipoise), the number of the hydrogen atom with silicon atom bonding of 1 intramolecular Amount：8) mixing so that whole vinyl and with the molar ratio (hydrogen atom/vinyl) of whole hydrogen atoms of silicon atom bonding be 0.9, compared with 100 mass parts of mixture of siloxanes, the tool of the expression of the following formula (1) as ingredient (C) of 1 mass parts of mixing There is the silicon compound (boiling point of acetylene system unsaturated group：120℃).
HC≡C-C(CH3)2-O-Si(CH3)3Formula (1)
Then, compared with the total amount of ingredient (A), ingredient (B) and ingredient (C), platinum concentration during being scaled platinum as The mode of 100ppm adds in platinum group catalyst (organosilicon Co., Ltd. of SHIN-ETSU HANTOTAI manufactures, trade name " CAT-PL-56 "), obtains organic The mixed liquor of polysiloxane composition.And then compared with obtained 100 mass parts of mixed liquor, the IP of 150 mass parts of addition 2028 (initial boiling points of solvent：200 DEG C, the emerging production manufacture of light extraction), obtain mixed solution.
Then, via the carrying-in/carrying-out mouth in heat treatment apparatus shown in Fig. 3, the supporting substrate with curability layer is removed Enter in heating chamber, the above-mentioned branch support group with curability layer is loaded on the top for being arranged at multiple supporting pins of heating chamber bottom Plate closes carrying-in/carrying-out mouth.First, the supporting substrate with curability layer for carrying out 150 seconds using heating plate with 160 DEG C adds Heat.It should be noted that the distance of curable silicone composition layer and heating plate is 70mm.
During heating, it is exhausted with the condition of 2000L/min, meanwhile, heating air (temperature is supplied with 2000L/min 120 DEG C of degree).
After heating, the carrying-in/carrying-out mouth of heat treatment apparatus is opened, the band for implementing heating is cured It is taken out of in the supporting substrate self-heating processing unit of property layer.It should be noted that it carries out after this takes out of, by next band curability The supporting substrate of layer is moved into via same carrying-in/carrying-out mouth in heat treatment apparatus, implements same heat.
Thereafter, the supporting substrate with curability layer after above-mentioned heating is put into other heat treatment apparatus, then with 220 DEG C of heating (rear baking processing) for implementing 1450 seconds form the organosilicon tree of 8 μm of thickness in the 1st interarea of supporting substrate Lipid layer.
Then, the organic siliconresin level on glass substrate and supporting substrate is suppressed to paste by atmospheric pressure at room temperature It closes, cuts off end, thus obtain long 1300mm, the glass laminate S1 of width 1100mm.
In embodiment 1, according to similary step, 100 glass laminate S1 are continuously made.
It should be noted that in obtained glass laminate S1, the silicone resin layer of any one and the layer of supporting substrate Interface peel strength of the peel strength than the interface of the layer and silicone resin layer of glass substrate it is big.
1 ＞ of ＜ comparative examples
Capacity when heating is changed to 1400L/min by 2000L/min, will heat the quantity delivered of air by 2000L/min is changed to 1400L/min, in addition, according to similarly to Example 1 the step of, manufacture 100 glass laminates C1。
The measure ＞ of ＜ protrusions
It is true using special inspection equipment to last glass laminate S1 and C1 obtained in embodiment 1 and comparative example 1 Recognize protrusion.Specifically, with camera clapped from a surface side irradiation LED light source and from another surface side when transporting glass laminate According to the luminance difference in the image differentiated will be determined as protrusion for the point of bright point.Thus the number of the protrusion judged is being implemented It is 15 in example 1, in comparative example 1 is 57.
Then, removed from glass laminate by glass substrate, expose the surface of silicone resin layer, then, use table Surface roughness/contour shape analyzer (manufacture of Tokyo Precision Co., Ltd, trade name " SURFCOM-1400D ") measures organosilicon Height H (the units of each protrusion on the surface of resin bed：μm) and width W (units：μm), it draws in the graph.
Fig. 9 is the chart of the relation of the height H and width W that represent protrusion.In the chart of Fig. 9, "●" represents embodiment 1 Point, " ◆ " represent the point of comparative example 1.As the diagram of Fig. 9, the ratio H/W of the protrusion of embodiment 1 is respectively less than 3 × 10-5, with this Relatively, the ratio H/W of the protrusion of comparative example is 3 × 10-5More than.
It should be noted that the stripping of glass substrate carries out as follows.First, the 2nd interarea of glass substrate is fixed on Determine on platform, with the 2nd interarea (face with silicone resin layer side opposite side) of sucker suction supporting substrate.Then, to glass The silicone resin layer in 1 corner in 4 corners that laminated body has and the interface inserting thickness 0.4mm's of glass substrate Knife makes glass substrate slightly remove, and forms the starting point of stripping.Then, sucker is made to be moved to the direction away from fixed station, by tape tree The supporting substrate and glass substrate of lipid layer are removed.
The uneven evaluation ＞ of ＜ displays
Using the embodiment 1 for determining protrusion glass laminate S1 and there is no protrusion in addition prepare it is glass laminated Body is clamped with the LCD panel of liquid crystal according to the manufacture of aftermentioned method.
Then, configured on the 2nd interarea (face with silicone resin layer side opposite side) of the supporting substrate of both sides inclined Light film (Nitto Denko Corp's manufacture, trade name " F1205DU "), irradiates the area source as backlight, knot from a surface side The generation of display uneven (stain is uneven) is not observed in the position of protrusion for fruit.
On the other hand, the glass laminate C1 of the comparative example 1 to determining protrusion is similarly evaluated, as a result, The position of protrusion observed the generation of display uneven (stain is uneven).
It can be seen from the above result that the ratio H/W of the protrusion formed on the surface of silicone resin layer is less than 3 × 10-5When, even if Protrusion is formed, can also inhibit the uneven generation of display.
The manufacture ＞ of ＜ LCD
In this example, LCD is manufactured using the glass laminate S1 obtained in embodiment 1.
First, 2 pieces of glass laminate S1 are prepared, in one piece of glass laminate S1 (hereinafter also referred to " glass laminate S1- 1 ") on the 2nd interarea of glass substrate, silicon nitride, silica, non-crystalline silicon film forming are made successively by plasma CVD method.Then, The boron of low concentration is injected by amorphous silicon layer by ion doping apparatus, 450 DEG C is carried out under nitrogen atmosphere and heats for 60 minutes, Carry out Dehydroepiandrosterone derivative.
Then, the crystallization that amorphous silicon layer is carried out using laser anneal device is handled.Then, by using photolithographic The phosphorus of low concentration is injected amorphous silicon layer, forms the TFT zone of N-type and p-type by etching and ion doping apparatus.Then, in glass 2nd interarea side of substrate, using plasma CVD method form silicon oxide film and after forming gate insulating film, by sputtering method make molybdenum into Film forms gate electrode by using photolithographic etching.Then, using photoetching process and ion doping apparatus, by high concentration Boron and phosphorus injection N-type, the respective desired region of p-type, form source region (source area) and drain region (drain area).Then, in the 2nd interarea side of glass substrate, it is exhausted to form interlayer by using the film forming of the silica of plasma CVD method Velum forms TFT electrodes by using the film forming of the aluminium of sputtering method and using photolithographic etching.Then, under a hydrogen atmosphere into 450 DEG C of row, the heating of 60 minutes carry out hydrogenation treatment, afterwards, by using the film forming of the silicon nitride of plasma CVD method, Form passivation layer.Afterwards, in the 2nd interarea side coated UV line curable resin of glass substrate, formed by photoetching process flat Change layer and contact hole.Then, indium oxide tin film is formed using sputtering method, pixel electricity is formed by using photolithographic etching Pole.
Then, to another piece of glass laminate S1 (hereinafter also referred to " glass laminate S1-2 "), under air atmosphere into 450 DEG C of row, the heating of 60 minutes.Then, on the 2nd interarea of the glass substrate of glass laminate S1-2, sputtering is passed through Method makes chromium form a film, and light shield layer is formed by using photolithographic etching.Then, in the 2nd interarea side of glass substrate, mould is passed through Coating coating chromatic resist forms colour filter by photoetching process and heat cure.Then, tin indium oxide is formed by sputtering method Film, shape paired electrode.Then, in the 2nd interarea side of glass substrate, by die coating method coated UV line solidified resin liquid, and lead to It crosses photoetching process and heat cure forms column spacer.Then, polyimide resin liquid is coated with by rolling method, and passes through heat cure Oriented layer is formed, is rubbed.
Then, sealing resin liquid is drawn by frame-shaped by distributor method (dispenser method), passes through distribution Liquid crystal drop is added in frame by device method, afterwards, using the above-mentioned glass laminate S1-1 for being formed with pixel electrode, by 2 pieces of glassy layers 2nd interarea side of the glass substrate of stack S1 is bonded each other, and LCD panel is obtained by ultraviolet curing and heat cure.
Then, the 2nd interarea vacuum suction of the supporting substrate of glass laminate S1-1 is made in platform, to glass laminate The stainless steel cutter of the glass substrate in the corner of S1-2 and the interface inserting thickness 0.1mm of silicone resin layer forms glass 1st interarea of substrate and the stripping starting point on the fissility surface of silicone resin layer.Here, while by ion generator (KEYENCE CORPORATION manufactures) is blowed except electronic fluids to the interface while carrying out the insertion of cutter.Then, while by Ion generator continues to blow except electronic fluids to the gap of formation, while rising vacuum cup.Then, vacuum cup is utilized The 2nd interarea of the supporting substrate of glass laminate S1-2 is adsorbed, and then sucker is made to increase.As a result, the only lower tape on platform There is the dummy cell of the LCD of the supporting substrate of glass laminate S1-1, it can be by the band silicone resin layer of glass laminate S1-2 Supporting substrate remove.
Then, make to be formed with the 1st interarea vacuum suction of the glass substrate of colour filter in platform in the 2nd interarea, to glass The stainless steel cutter of the glass substrate in the corner of laminated body S1-1 and the interface inserting thickness 0.1mm of silicone resin layer, shape Into the stripping starting point on the fissility surface of the 1st interarea and silicone resin layer of glass substrate.Then, glass is adsorbed with vacuum cup 2nd interarea of the supporting substrate of glass laminated body S1-1, and then sucker is made to increase.As a result, LCD cell is only remained on platform, The supporting substrate for being fixed with silicone resin layer can be removed.Thereby, it is possible to obtain being made of the glass substrate of thickness 0.1mm Multiple LCD cells.
Then, by cut off operation, multiple LCD cells are divided into.Manufactured each LCD cell is implemented to attach polarizer Process, and then implement module formation process and obtain LCD.Thus obtained LCD will not characteristically be led to the problem of.
The present invention is described in detail above by reference to specific embodiment, but those skilled in the art are shown and easy See, various changes, amendment can be increased on the premise of the spirit and scope of the invention is not departed from.
The application is to go out to be willing to the application of 2014-111476 based on Japanese Patent filed in 29 days Mays in 2014, and content is made It is cited for reference into the application.

Claims (8)

1. a kind of supporting substrate of tape tree lipid layer, the organic siliconresin with supporting substrate He the one side for being arranged at supporting substrate Layer, the supporting substrate of the tape tree lipid layer are used for the laminated glass substrate on the silicone resin layer and manufacture glass laminated Body, wherein,
Protrusion, the height of the protrusion are formed on the surface of the one side of the stacking glass substrate of the silicone resin layer The ratio between H and width W H/W are less than 3 × 10-5。
2. the supporting substrate of tape tree lipid layer according to claim 1, wherein, the height H of the protrusion is less than 0.10 μm.
3. a kind of glass laminate, possesses：
The supporting substrate of tape tree lipid layer described in claim 1 or 2 and
The glass substrate being laminated on the silicone resin layer.
4. glass laminate according to claim 3, wherein, the organic siliconresin is olefinic organic based polysiloxane and has The reaction solidfied material of machine hydrogen polysiloxanes.
5. the glass laminate according to claim 3 or 4, wherein, the glass substrate is by with the quality of oxide benchmark Percentage represents that the alkali-free glass containing following compositions is formed,
SiO2：50~66%
Al2O3：10.5~24%
B2O3：0~12%
MgO：0~8%
CaO：0~14.5%
SrO：0~24%
BaO：0~13.5%
MgO+CaO+SrO+BaO：9~29.5%
ZrO2：0~5%.
6. the glass laminate according to claim 3 or 4, wherein, the glass substrate is by with the quality of oxide benchmark Percentage represents that the alkali-free glass containing following compositions is formed,
SiO2：58~66%
Al2O3：15~22%
B2O3：5~12%
MgO：0~8%
CaO：0~9%
SrO：3~12.5%
BaO：0~2%
MgO+CaO+SrO+BaO：9~18%
ZrO2：0~5%.
7. the manufacturing method of a kind of electronic equipment, possesses：
Component formation process forms electronic equipment structure on the surface of the glass laminate any one of claim 3~6 Part, obtain having electronic equipment component laminated body and
The supporting substrate of the tape tree lipid layer from the laminated body of the having electronic equipment component is removed, obtained by separation circuit Electronic equipment with the glass substrate and the electronic device member.
8. a kind of manufacturing method of the supporting substrate of tape tree lipid layer, the supporting substrate of the tape tree lipid layer has supporting substrate and sets The silicone resin layer of the one side of supporting substrate is placed in, is used for the laminated glass substrate on the silicone resin layer and makes Glass laminate is made, which possesses following process：
Curable silicone composition is coated on the process on the supporting substrate,
In defined chamber, to be coated with the curable silicone composition the supporting substrate carry out preliminary drying processing and Baking is handled afterwards, so as to obtain the process of silicone resin layer；
The preliminary drying processing has following process：The process heated to the curable silicone composition and progress Supply gas and the process from the chamber indoor exhaust into the chamber,
By adjusting the quantity delivered and capacity of the gas, inhibit attachment of the drop of solvent to the silicone resin layer, The ratio H/W of following H and W is made to be less than 3 × 10-5,
H：Height in the protrusion that the surface of the one side of the stacking glass substrate of the silicone resin layer is formed,
W：Width in the protrusion that the surface of the one side of the stacking glass substrate of the silicone resin layer is formed.
CN201510290840.0A 2014-05-29 2015-05-29 The supporting substrate and its manufacturing method of tape tree lipid layer, the manufacturing method of glass laminate and electronic equipment Expired - Fee Related CN105128460B (en)

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* Cited by examiner, † Cited by third party
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