CN104626664B - The manufacture method of glass laminate and the manufacture method of electronic device - Google Patents
The manufacture method of glass laminate and the manufacture method of electronic device Download PDFInfo
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- CN104626664B CN104626664B CN201410643715.9A CN201410643715A CN104626664B CN 104626664 B CN104626664 B CN 104626664B CN 201410643715 A CN201410643715 A CN 201410643715A CN 104626664 B CN104626664 B CN 104626664B
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- inorganic layer
- glass substrate
- glass
- manufacture method
- electronic device
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Links
- 238000000034 method Methods 0.000 title claims abstract description 132
- 239000005340 laminated glass Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 285
- 239000011521 glass Substances 0.000 claims abstract description 220
- 230000008569 process Effects 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000003475 lamination Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 230000014759 maintenance of location Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000006837 decompression Effects 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000000926 separation method Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 18
- 238000012423 maintenance Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 239000002585 base Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000013007 heat curing Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 241000894007 species Species 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 235000009854 Cucurbita moschata Nutrition 0.000 description 2
- 240000001980 Cucurbita pepo Species 0.000 description 2
- 235000009852 Cucurbita pepo Nutrition 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- -1 SiCO Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 229910001512 metal fluoride Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 235000020354 squash Nutrition 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000007501 Fourcault process Methods 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 244000131316 Panax pseudoginseng Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021525 ceramic electrolyte Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000003283 slot draw process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/04—Time
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/14—Velocity, e.g. feed speeds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/60—In a particular environment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Laminated Bodies (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides the manufacture method of glass laminate and the manufacture method of electronic device.Glass laminate is obtained by the manufacture method of glass laminate, which includes：Supporting substrates with inorganic layer, have supporting substrates and are configured at the inorganic layer of supporting substrates；Glass substrate, is laminated in inorganic layer with peeling off, the manufacture method of glass laminate includes：Lamination process, inorganic layer is laminated in by glass substrate；Heating treatment step, is heated after lamination process, and inorganic layer contains selects at least one kind of, the condition of following (a)~(d) of heating satisfaction from the group being made of carborundum, silicon oxide carbide, silicon nitride and silicon oxynitride：(a) programming rate：Less than 300 DEG C/min；(b) heating-up temperature：150 DEG C~600 DEG C；(c) retention time：More than 0.5 minute；(d) atmosphere：Air atmosphere or non-active gas atmosphere under atmospheric pressure state or the air atmosphere under decompression state or non-active gas atmosphere or vacuum atmosphere.
Description
Technical field
The present invention relates to the manufacture method of glass laminate and the manufacture method of electronic device.
Background technology
In recent years, (electronics is set the electronic device such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED)
It is standby) slimming, lightweight promoting so that the thin plateization of glass substrate is also pushing away used in these electronic devices
Into.On the other hand, when causing the intensity deficiency of glass substrate because of thin plate, glass can be made in the manufacturing process of electronic device
The treatability of glass substrate reduces.
Therefore, recently, a kind of following method is proposed from the viewpoint of the treatability for improving glass substrate：Prepare glass
Glass substrate is layered in the layered product formed on the inorganic thin film of the supporting glass with inorganic thin film, on the glass substrate of layered product
Implement the manufacture processing of element, afterwards, glass substrate is separated with layered product (patent document 1).
Patent document 1：Japanese Laid-Open 2011-184284 publications
The content of the invention
Problems to be solved by the invention
The present inventors are on the basis of patent document 1 to configuring the inorganic layer (nothing on supporting substrates (supporting glass)
Machine film) studied.It turns out that it could be used without specifically recording in patent document 1 in the composition as inorganic layer
Specific composition in the case of, the fissility when the glass substrate on inorganic layer is peeled off is excellent.
In addition, in the method described in patent document 1, heated after stacking.Therefore, the present inventors exist
Glass substrate is layered in using after on the inorganic layer specifically formed, in the condition that patent document 1 is specifically recorded
Under heated.It turns out that fracture (Japanese implementing cutting to having carried out the layered product after the heating：Cut り
Roll over り), grinding when, be unable to maintain that laminated arrangement sometimes.In this case, in the glass for the layered product for carrying out the heating
When electronic device component is formed on substrate, glass substrate can peel off, and it is bad that this may produce the electronic device of acquisition
Situation.
The present invention allows for problem above point and makes, its object is to, there is provided make configuration on supporting substrates
The manufacture method of the excellent glass laminate of stacking maintenance between inorganic layer and glass substrate and use the glass laminate
Electronic device manufacture method.
The solution used to solve the problem
The present inventors have made intensive studies to realize the mesh, it turns out that, in the composition as inorganic layer
And in the case of using specific composition, by being carried out under given conditions after glass substrate is layered on inorganic layer
Heat, the laminated arrangement being able to maintain that between inorganic layer and glass substrate, has thus completed the present invention.
That is, the present invention provides following technical solution (1)~technical solution (4).
Technical solution (1) provides a kind of manufacture method of glass laminate, and glass laminate is obtained by the manufacture method,
The glass laminate includes：Supporting substrates with inorganic layer, its nothing with supporting substrates and configuration on the supporting substrates
Machine layer；And glass substrate, itself so as to peel off mode be layered on the inorganic layer, wherein, the system of the glass laminate
Making method includes following process：Lamination process, the glass substrate is layered on the inorganic layer；And heat work
Sequence, is heated after the lamination process, the inorganic layer contain from by carborundum, silicon oxide carbide, silicon nitride with
And at least one kind of material chosen in the group of silicon oxynitride composition, it is described to heat the condition for meeting following (a)~following (d)：
(a) programming rate：Less than 300 DEG C/min；(b) heating-up temperature：150 DEG C~600 DEG C；(c) retention time：0.5 point
It is more than clock；And (d) atmosphere：It is big under air atmosphere or non-active gas atmosphere or decompression state under atmospheric pressure state
Gas atmosphere or non-active gas atmosphere or vacuum atmosphere.
Technical solution (2) is the manufacture method of the glass laminate according to the technical solution (1), wherein, it is described
(a) programming rate is less than 200 DEG C/min.
Technical solution (3) is the manufacturer of the glass laminate according to the technical solution (1) or technical solution (2)
Method, wherein, the supporting substrates are glass substrate.
Technical solution (4) provides a kind of manufacture method of electronic device, wherein, the manufacture method of the electronic device include with
Lower process：Component formation process, it is glass laminated any one of by the technical solution (1)~technical solution (3)
Electronic device component is formed on the surface of the glass substrate in the glass laminate that the manufacture method of body obtains and is obtained
The layered product of having electronic device component；And separation circuit, by the supporting substrates with inorganic layer from the having electronic device
The layered product of part component is peeled off and obtains the electronic device with the glass substrate and the electronic device component.
The effect of invention
Using the present invention, using the teaching of the invention it is possible to provide maintain the stacking between inorganic layer and glass substrate of the configuration on supporting substrates
Property the manufacture method of the excellent glass laminate and manufacture method of electronic device using the glass laminate.
Brief description of the drawings
Fig. 1 is the schematic cross sectional views for the embodiment for representing the glass laminate of the present invention.
(A) of Fig. 2 and (B) of Fig. 2 are the process charts of the manufacture method of the electronic device of the present invention.
Fig. 3 is the schematic cross sectional views for the evaluation method for representing fissility.
Embodiment
Hereinafter, the preferred configuration of the glass laminate of the present invention and the manufacture method of electronic device is explained with reference to,
But the present invention is not limited to following embodiment, and can be without departing from the scope of the present invention to following embodiment
Apply various modifications and replacement.
By the present invention glass laminate manufacture method obtain glass laminate be generally make to employ it is specific
Composition inorganic layer formed between supporting substrates and glass substrate, thus, even in carrying out the place under hot conditions
After reason, the fissility between inorganic layer and glass substrate is also excellent.
Hereinafter, first, the preferred embodiment of glass laminate is described in detail, afterwards, describes the glass laminate in detail
Manufacture method and using the glass laminate electronic device manufacture method preferred embodiment.
Glass laminate
Fig. 1 is the schematic cross sectional views of an embodiment of the glass laminate of the present invention.
As shown in Figure 1, glass laminate 10 has supporting substrates 16 and glass substrate 18 with inorganic layer, the band inorganic layer
Supporting substrates 16 be made of supporting substrates 12 and inorganic layer 14.In glass laminate 10, by the supporting substrates with inorganic layer
The inorganic layer surface 14a (surface of the side opposite with 12 side of supporting substrates) of 16 inorganic layer 14 and the 1st of glass substrate 18 the
Main surface 18a is as lamination surface and by the supporting substrates 16 with inorganic layer and glass substrate 18 so as to the mode peeled off has been laminated
Come.That is, the face of the side of inorganic layer 14 is fixed on supporting substrates 12, and the face of its opposite side and glass substrate 18
The 1st main surface 18a be in contact, the interface between inorganic layer 14 and glass substrate 18 be so as to peel off mode it is closely sealed.
In other words, inorganic layer 14 possesses release performance relative to the 1st main surface 18a of glass substrate 18.
In addition, using the glass laminate 10 untill component formation process described later.That is, using the glass laminate
10 on the 2nd main surface 18b surfaces in the glass substrate 18 untill the electronic device components such as liquid crystal display device are formed.
Afterwards, interface of the supporting substrates 16 between glass substrate 18 with inorganic layer is stripped, the supporting substrates with inorganic layer
16 do not become the component for forming electronic device.Can be with 18 layers new of glass substrate by the separated supporting substrates 16 with inorganic layer
It is folded, and can be reused as new glass laminate 10.
In the present invention, the fixation and (can peel off) it is closely sealed in peel strength (peeling off required stress) not
Together, refer to that fixed peel strength is bigger than closely sealed peel strength.Specifically, the boundary between inorganic layer 14 and supporting substrates 12
The peel strength in face is more than the peel strength at the interface between the inorganic layer 14 and glass substrate 18 in glass laminate 10.
In addition, can peel off it is closely sealed be to refer to peel off, and also refer to do not make fixed face peeling-off
On the premise of peeled off.That is, referring in the glass laminate 10 of the present invention, carrying out making glass substrate
18 with the case of 12 separated operation of supporting substrates, in closely sealed face (interface between inorganic layer 14 and glass substrate 18)
It is peeling-off, it is not peeling-off in fixed face.Thus, into be about to glass laminate 10 be separated into glass substrate 18 and branch
When holding the operation of substrate 12, glass laminate 10 is separated into glass substrate 18 and the supporting substrates 16 this two with inorganic layer
Point.
Hereinafter, first, the supporting substrates 16 and glass substrate 1 with inorganic layer for forming glass laminate 10 are described in detail,
Afterwards, the manufacturing step (manufacture method of glass laminate of the invention) of glass laminate 10 is described in detail.
Supporting substrates with inorganic layer
Supporting substrates 16 with inorganic layer include supporting substrates 12 and configuration (fixation) on the surface of supporting substrates 12
Inorganic layer 14.Inorganic layer 14 is so as to the mode peeled off snugly is configured at the branch with inorganic layer with 18 phase of glass substrate described later
Hold the outermost in substrate 16.
Hereinafter, the embodiment of supporting substrates 12 and inorganic layer 14 is described in detail.
Supporting substrates
Supporting substrates 12 are substrates as following：It has the 1st main surface and the 2nd main surface and with configuration in the 1st master
Inorganic layer 14 on surface coordinates to support simultaneously reinforcing glass substrate 18, and in component formation process described later (manufacture electronics device
Part is with the process of component) in the deformation of glass substrate 18, scratch, breakage etc. when preventing the manufacture of electronic device component.
As supporting substrates 12, metallic plate etc. such as glass plate, plastic plate and SUS plates can be used.Supporting substrates
12 in the case where component formation process is with heat treatment, and the difference preferably by the linear expansion coefficient between glass substrate 18 is smaller
Material formed, more preferably formed by the material identical with glass substrate 18.That is, supporting substrates 12 are preferably glass plate.Supporting
Glass plate of the substrate 12 particularly preferably to be made of the glass material identical with glass substrate 18.
The thickness of supporting substrates 12 both can be thicker than glass substrate 18 described later, can also be than glass substrate 18 described later
It is thin.Preferably, the thickness of thickness, inorganic layer 14 and the thickness of glass laminate described later 10 based on glass substrate 18 come
Select the thickness of supporting substrates 12.Such as it is designed as carrying out the substrate that thickness is 0.5mm in current component formation process
In the case that the sum of thickness of thickness and inorganic layer 14 of processing and glass substrate 18 is 0.1mm, then by the thickness of supporting substrates 12
Degree is set to 0.4mm.In normal circumstances, the thickness of supporting substrates 12 is preferably 0.2mm~5.0mm.
In the case where supporting substrates 12 are glass plate, consider from being easily processed, being not likely to produce crackle etc., glass plate
Thickness be preferably more than 0.08mm.In addition, peeled off from it is expected that glass plate has after electronic device is formed with component
When glass plate can moderately bend without crack it is such it is rigid from the aspect of, the thickness of glass plate is preferably
It is 1.0mm following.
Inorganic layer
Inorganic layer 14 be configuration (fixation) in the 1st main surface of supporting substrates 12 and with the 1st main table of glass substrate 18
The layer that face 18a is in contact.In the present invention, containing from by carborundum (following, be also marked as " SiC "), silicon oxide carbide (it is following,
Also be marked as " SiCO "), silicon nitride (following, be also marked as " SiN ") and silicon oxynitride (following, to be also marked as " SiNO ") structure
Into group in the composition of at least one kind of material for choosing as inorganic layer 14.In addition, the composition of inorganic layer 14 can pass through X-ray
Electron spectroscopy for chemical analysis (XPS) measures.
By the way that such inorganic layer 14 is arranged on supporting substrates 12, even if long time treatment under the high temperature conditions
Afterwards, it can also suppress between inorganic layer 14 and glass substrate 18 bonding, so that fissility is excellent.The reason is not yet clear for it, but
It is believed that the reason is that by making the difference of the electronegativity between Si and C or N smaller, so as to be not easy to make inorganic layer and glass
Chemical bond between substrate is produced to be changed from weaker combination to stronger combination.
In addition, in the present invention, the surface roughness Ra of inorganic layer surface 14a is preferably below 2.00nm, more preferably
Below 1.00nm, from the viewpoint of stackability and fissility, more preferably 0.20nm~1.00nm.In addition, Ra (arithmetic
Mean roughness) it is measured according to Japanese Industrial Standards JIS B 0601 (revising for 2001).Japanese Industrial Standards JIS
The content of B 0601 (revising for 2001) is incorporated herein as reference.
Average coefficient of linear expansion (hereinafter simply referred to as " average coefficient of linear expansion ") of the inorganic layer 14 at 25 DEG C~300 DEG C
It is not particularly limited, in the case where glass plate is used as supporting substrates 12, the average coefficient of linear expansion of inorganic layer 14 is preferably
10 × 10-7/ DEG C~200 × 10-7/ DEG C.As long as the average coefficient of linear expansion of inorganic layer 14 is within the range, inorganic layer will be made
14 and glass plate (SiO2) between the difference of average coefficient of linear expansion diminish, glass substrate 18 and the branch with inorganic layer can be suppressed
Hold and misplace in high temperature environments between substrate 16.
Inorganic layer 14 preferably comprises at least one kind of material chosen from the group being made of described SiC, SiCO, SiN and SiNO
Material is used as main component.Here, main component refers to, for 14 total amount of inorganic layer, total amount of these components is
More than 90 mass %, be preferably more than 98 mass %, more preferably more than 99 mass %, particularly preferably 99.999 mass % with
On.
It is preferably 5nm~5000nm, more preferably from the viewpoint of marresistance as the thickness of inorganic layer 14
10nm~500nm.
In Fig. 1, inorganic layer 14 is recorded into individual layer, but inorganic layer 14 can also be laminated more than two layers.In two layers of stacking
In the case of above, inorganic layer 14 can also be the mutually different composition of each layer.In addition, in this case, " the thickness of inorganic layer
Degree " refers to all layers of aggregate thickness.
In general, inorganic layer 14 is arranged on the entire surface of supporting substrates 12 as shown in Figure 1, but in the effect for not influencing the present invention
In the range of fruit, inorganic layer 14 can also be arranged on the part on 12 surface of supporting substrates.For example, inorganic layer 14 can also be with island
Shape, striated are arranged on 12 surface of supporting substrates.
Inorganic layer 14 shows excellent heat resistance.Therefore, even if glass laminate 10 is exposed under the high temperature conditions, also not
Easily cause the chemical change of inorganic layer in itself, be not easy to produce chemical knot between inorganic layer 14 and glass substrate described later 18
Close, so as to be not likely to produce re-separation (Japanese：Chong Bao Fromization) caused by inorganic layer 14 be attached to the situation of glass substrate 18.
Here, re-separation refers to, the peel strength at the interface between inorganic layer 14 and glass substrate 18 is more than supporting base
Intensity (the bulk strength of the peel strength at the interface between plate 12 and inorganic layer 14 and the material of inorganic layer 14 in itself：bulk
Strength any one intensity in).If the interface between inorganic layer 14 and glass substrate 18 produces re-separation, inorganic
The component of layer 14 is easily attached to 18 surface of glass substrate and the purifying of the surface of glass substrate 18 is become difficult.Nothing
Machine layer 14 is attached to 18 surface of glass substrate and refers to, whole inorganic layer 14 is attached to 14 surface of 18 surface of glass substrate and inorganic layer
Situations such as damage occurs and makes a part for the component on 14 surface of inorganic layer be attached to 18 surface of glass substrate.
The manufacture method of supporting substrates with inorganic layer
As the manufacture method of the supporting substrates 16 with inorganic layer, can use such as vapour deposition method, sputtering method or CVD method
Method, in the case of for sputtering method, specifically, for example, the following methods can be enumerated：While use SiC target material or SiN targets
Material simultaneously imports the non-active gas such as Ar or non-active gas and O2Or CO2Etc. the mixed gas of oxygen-containing atomic gas, while propping up
Hold setting inorganic layer 14 on substrate 12.In addition, as manufacturing condition, can be properly selected most according to used material etc.
Good condition.
In addition, formed on supporting substrates 12 after inorganic layer 14, in order to control the surface roughness of inorganic layer surface 14a
Ra, can implement to carry out smooth (Japanese to the surface of inorganic layer 14：Cut Ru) processing.As the processing, can include for example
Ion sputtering process etc..
Glass substrate
Glass substrate 18 is closely sealed in its 1st main surface 18a and inorganic layer 14, and in the side opposite with 14 side of inorganic layer
2nd main surface 18b is equipped with electronic device component described later.
On the species of glass substrate 18, it can be common glass substrate, can include such as LCD, OLED so
The glass substrate of display device etc..The chemical proofing of glass substrate 18, resistance to excellent moisture permeability, and percent thermal shrinkage compared with
It is low.As the index of percent thermal shrinkage, line specified in Japanese Industrial Standards JIS R 3102 (nineteen ninety-five amendment) can be used swollen
Swollen coefficient.The content of Japanese Industrial Standards JIS R 3102 (nineteen ninety-five revision) is used as reference to be incorporated herein.
Glass substrate 18 can be obtained by being melted frit, moltening glass into tabular.This shaping
Method can be common manufacturing process, can use such as float glass process, fusion method, slot draw method, vertical drawing process
(fourcault process), mechanical cylinder process (Labbers process) etc..In addition, the especially glass substrate of thinner thickness
It is to make it using the glass for being temporarily configured to tabular is heated to shapable temperature and is stretched by the methods of stretching
Obtained from thinning method (horizontal sheet process) shaping.
The glass of glass substrate 18 is not particularly limited, is preferably alkali-free pyrex, pyrex, sodium calcium glass
Glass, vagcor and other oxide system glass using silica as main component.As oxide system glass, preferably
The content of silica to be converted based on oxide is the glass of the mass % of 40 mass %~90.
As the glass of glass substrate 18, the species for being adapted to device, the glass of its manufacturing process can be used.For example, liquid
The glass substrate of crystal panel easily has an impact liquid crystal due to the dissolution of alkali metal component, by being substantially free of alkali
The glass (alkali-free glass) of metal ingredient forms (wherein, generally including alkaline earth metal component).In this way, the glass of glass substrate 18
It can be properly selected based on the species of be applicable in device with its manufacturing process.
The thickness of glass substrate 18 is not particularly limited, but the slimming from glass substrate 18 and/or light-weighted viewpoint
Consider, the thickness of glass substrate 18 is usually below 0.8mm, is preferably below 0.3mm, more preferably below 0.15mm.
Glass substrate 18 thickness be more than 0.8mm in the case of, it is impossible to meet glass substrate 18 slimming and/or it is light-weighted will
Ask.In the case where the thickness of glass substrate 18 is below 0.3mm, it can assign glass substrate 18 good flexibility.In glass
In the case that the thickness of substrate 18 is below 0.15mm, glass substrate 18 can be rolled into a roll.In addition, from making glass substrate 18
Processing easy to manufacture, glass substrate 18 easily etc. consider, the thickness of glass substrate 18 is preferably more than 0.03mm.
In addition, glass substrate 18 can also be made of more than two layers material, in this case, the material of each layer had been formed both
Can be congener material or different types of material.In addition, in this case, " thickness of glass substrate " is
Refer to all layers of aggregate thickness.
Further inorganic thin film layer can also be laminated on the 1st main surface 18a of glass substrate 18.
In the case where inorganic thin film layer configuration (fixation) is on glass substrate 18, in glass laminate, band inorganic layer
The inorganic layers 14 of supporting substrates 16 be in contact with inorganic thin film layer.By the way that inorganic thin film layer is arranged on glass substrate 18,
Even if after long time treatment under the high temperature conditions, it also can further suppress glass substrate 18 and the supporting substrates with inorganic layer
Bonding between 16.
The embodiment of inorganic thin film layer is not particularly limited, but it is preferred that inorganic thin film layer contains from by metal oxygen
Compound, metal nitride, metal oxynitride, metal carbides, carbonitride, metal silicide and metal fluoride
At least one kind of material chosen in the group of composition.Wherein, from make glass substrate 18 fissility it is more excellent from the aspect of, it is inorganic
Film layer preferably comprises metal oxide, further preferably tin indium oxide.
As metal oxide, metal nitride, metal oxynitride, can include for example from Si, Hf, Zr, Ta, Ti,
Y, a kind chosen in Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In and Ba with
On element oxide, nitride, nitrogen oxides.More specifically, titanium oxide (TiO can be included2), indium oxide
(In2O3), tin oxide (SnO2), zinc oxide (ZnO), gallium oxide (Ga2O3), tin indium oxide (ITO), indium zinc oxide (IZO), oxidation
Zinc-tin (ZTO) and gallium-doped zinc oxide (GZO) etc..
As metal carbides, carbonitride, can include for example chosen from Ti, W, Si, Zr, Nb a kind with
On element carbide, carbonitride.As metal silicide, more than a kind for example chosen from Mo, W, Cr can be included
Element silicide.As metal fluoride, more than a kind of element for example being chosen from Mg, Y, La, Ba can be included
Fluoride.
Glass laminate
The glass laminate 10 of the present invention is by inorganic the layer surface 14a and glass of the supporting substrates 16 with inorganic layer
1st main surface 18a of substrate 18 is as lamination surface and by the supporting substrates 16 with inorganic layer and glass substrate 18 so as to peeling off
The layered product that is laminated of mode.In other words, glass laminate 10 of the invention be inorganic layer 14 between supporting substrates 12 with
Layered product between glass substrate 18.
The manufacture method of glass laminate
Lamination process
The manufacture method of the glass laminate of the present invention has the stacking work being layered in glass substrate 18 on inorganic layer 14
Sequence.Here, the method as laminated glass substrate 18, it is not particularly limited, and specifically, the following methods can be enumerated：
Under atmospheric pressure environment by the supporting substrates 16 with inorganic layer and glass substrate 18 it is overlapping after, such as the dead weight in glass substrate 18
Effect is lower or by gently being pressed the 2nd main surface 18b of glass substrate 18 at one, so that closely sealed starting point is produced in faying surface,
Closely sealed lighted from this is closely sealed is set to extend naturally；Using roller, pressing plate by supporting substrates 16 and glass substrate 18 with inorganic layer
Crimping get up and make it is closely sealed lighted from closely sealed extension etc..Crimped using roller, pressing plate, except making inorganic layer 14 and glass base
Plate 18 is further closely sealed, additionally it is possible to the bubble removal being relatively easily mixed between inorganic layer 14 and glass substrate 18, so excellent
Choosing.
In addition, if method is laminated by vacuum, vacuum pressing is crimped, can preferably suppress bubble and be mixed into, really
Well closely sealed is protected, therefore is preferred.By being crimped under vacuum, also have the advantages that as follows：
In the case of remaining small bubble, bubble does not also become larger because of heating, so as to not easily lead to strain defect.
Make the supporting substrates 16 with inorganic layer with glass substrate 18 so as to when the mode peeled off is closely sealed, it is preferred that
The fully face of the side to contact with each other of cleaning inorganic layer 14 and glass substrate 18, and by them under the higher environment of cleanliness factor
Stacking is got up.Since the higher flatness of cleanliness factor is better, so it is preferred that.
The method of cleaning is not particularly limited, and can be included and for example cleaned inorganic layer 14 or glass base with alkaline aqueous solution
Using water come the method further cleaned after the surface of plate 18.
Heating treatment step
The manufacture method of the glass laminate of the present invention has the heating heated after lamination process
Process, the heating meet the condition of following (a)~following (d)：
(a) programming rate：Less than 300 DEG C/min；
(b) heating-up temperature：150 DEG C~600 DEG C；
(c) retention time：More than 0.5 minute；And
(d) atmosphere：The air gas under air atmosphere or non-active gas atmosphere or decompression state under atmospheric pressure state
Atmosphere or non-active gas atmosphere or vacuum atmosphere.
It is full by implementing in the case where the supporting substrates 16 with inorganic layer have and employ the inorganic layer 14 of the composition
The heating of the condition of foot (a)~(d), so that stacking maintenance is excellent.It is believed that the reason is that in stacking work
The interface acted in sequence between inorganic layer 14 and glass substrate 18 is weaker molecular separating force (for example, Van der Waals force, hydrogen bond
Deng), on the other hand, if applying appropriate heat in the range of the condition of (a)~(d), in addition to the molecular separating force,
The oxygen diffusion reaction of appropriateness is also produced in interface, thus improves bonding force.
If programming rate is more than 300 DEG C/min (a), stacking maintenance is poor, as long as programming rate is 300 DEG C/min
Hereinafter, maintenance is laminated with regard to excellent.From make the localized delamination of heating midway less and make stacking maintain state in face it is uniform
From the aspect of making stacking maintenance more excellent, (a) programming rate is preferably less than 250 DEG C/min, more preferably 200 DEG C/minute
Below clock, more preferably less than 100 DEG C/min.In addition, (a) programming rate is preferably more than 0.1 DEG C/min.
(b) heating-up temperature is the temperature kept after being heated up with the programming rate of (a), if less than 150
DEG C, then stacking maintenance is poor, as long as in the range of 150 DEG C~600 DEG C, stacking maintenance is also excellent with regard to excellent and fissility
It is different.From the aspect of making stacking maintenance more excellent, (b) heating-up temperature is preferably more than 200 DEG C, more preferably 250 DEG C~
350℃。
(c) retention time is to maintain the time of the heating-up temperature of (b), if being less than 0.5 minute (30 seconds), stacking dimension
Holding property is poor, as long as more than 0.5 minute (30 seconds), stacking maintenance is with regard to excellent.From make stacking maintenance it is more excellent in terms of
Consider, (c) retention time is preferably 1 minute~60 minutes, more preferably 3 minutes~10 minutes.
(d) atmosphere is when being heated up under conditions of (a) and being heated under conditions of (b) and (c)
Atmosphere, as long as being the air atmosphere under the air atmosphere under atmospheric pressure state or non-active gas atmosphere or decompression state
Or non-active gas atmosphere or vacuum atmosphere, just it is not particularly limited.Here, as non-active gas, can include for example
Ar gases, N2Gas etc..
The glass laminate 10 obtained by the manufacture method of the glass laminate of the present invention can act as various uses, can
Include and for example manufacture display device panel described later, the semiconductor crystal wafer of PV, thin-film secondary battery, surface formed with circuit
Purposes Deng electronic component etc..In addition, in the case of the purposes, glass laminate 10 is exposed to hot conditions (example mostly
Such as more than 350 DEG C) under more than when small (such as 1).
Here, display device is included with panel：LCD, OLED, Electronic Paper, field emission panel, quantum dot LED panel, MEMS
(Micro E1ectro Mechanica1Systems：Microelectromechanical systems) shutter face plate (Japanese：シャッターパネ
Le) etc..
Electronic device and its manufacture method
Then, electronic device and the preferred embodiment of its manufacture method are described in detail.
Fig. 2 is each manufacturing process in the preferred embodiment for the manufacture method for representing the electronic device of the present invention successively
Schematic cross sectional views.The preferred embodiment of the electronic device of the present invention includes component formation process and separation circuit.
Hereinafter, the step of describing the material used in each operation and each operation in detail with reference to Fig. 2.First, narration in detail
Component formation process.
Component formation process
Component formation process is the process that electronic device component is formed on the glass substrate in glass laminate.
More specifically, as shown in (A) of Fig. 2, in this process, formed on the 2nd main surface 18b of glass substrate 18
Electronic device component 20, so as to manufacture the layered product 22 of having electronic device component.
First, the step of describing the electronic device component 20 used in this process in detail, describing process in detail afterwards.
Electronic device is with component (functional element)
Electronic device component 20 is formed on the 2nd main surface 18b of the glass substrate 18 in glass laminate 10, simultaneously
For forming at least one of component of electronic device.More specifically, as electronic device component 20, can include aobvious
The electronic components such as the semiconductor crystal wafer of showing device panel, solar cell, thin-film secondary battery or surface formed with circuit
The component Deng used in.Display device is included with panel：Organic EL panel, field emission panel etc..
Such as the tin oxide as cathode can be included as component used for solar batteries, silicon type component used for solar batteries
Etc. transparency electrode, the silicon layer represented by the use of p layers/i layers/n-layer and metal as anode etc., other kinds of solar cell
It can be included with the corresponding various components such as compound type, dye sensitization type, quantum point type etc. with component.
In addition, as thin-film secondary battery component, the metal as cathode and anode can be included in type lithium ion
Or the transparency electrode such as metal oxide, the lithium compound as dielectric substrate, the metal as current collection layer, as sealant
Resin etc., other kinds of thin-film secondary battery component can be included with ni-mh type, polymer-type, ceramic electrolyte type etc.
Corresponding various components etc..
In addition, as electronic component component, the metal as conductive part can be included in CCD, CMOS, as insulation
The silica in portion, silicon nitride etc., other electronic component components can be included with pressure sensor acceleration sensor etc.
Corresponding various components such as various sensors, rigid printed base plate, flexible printing substrate, rigid and flexibility printed base plate etc..
The step of process
The having electronic device is not particularly limited with the manufacture method of the layered product 22 of component, can be according to electronic device
With the species profit of the member of formation of component by a conventionally known method glass laminate 10 glass substrate 18 the 2nd main surface
Electronic device component 20 is formed on 18b.
In addition, electronic device component 20 is not the component being eventually formed on the 2nd main surface 18b of glass substrate 18
Whole (hereinafter referred to as " whole components ") or whole component in a part (hereinafter referred to as " partial component ").
Can using the glass substrate with partial component in process afterwards as the glass substrate with whole components (with electronics described later
Device is suitable).Alternatively, it is also possible to form other electronics in the release surface (the 1st main surface) of the glass substrate with whole components
Device component.Moreover, assembled the layered product with whole components, afterwards, by the supporting base with inorganic layer
Plate 16 is peeled off from the layered product with whole components, so as to manufacture electronic device.Also, also can be to use the whole structures of two bands
The layered product of part assembles electronic device, afterwards, by two supporting substrates 16 with inorganic layer from the layered product with whole components
Peel off, so as to manufacture the electronic device with two glass substrates.
Such as in case of manufacturing OLED, in order in the 2nd main surface 18b of the glass substrate 18 of glass laminate 10
Surface on form organic EL tectosomes, and carry out following various layers formed, processing operation：Form transparency electrode；And then in shape
Hole injection layer, hole transporting layer, luminescent layer, electron supplying layer etc. are deposited on into the face for have transparency electrode；Form backplate；
Sealed etc. using sealing plate.Formed as these layers, processing operation, specifically, such as film process can be included, steamed
Plating, the processing of the bonding of sealing plate etc..
In addition, such as the manufacture method of TFT-LCD there are the various processes such as following process：TFT formation process, using anti-
Lose liquid formed on the metal film and metal oxide film formed by the common membrane formation process such as CVD method and sputtering method pattern so as to
Thin film transistor (TFT) (TFT) is formed on 2nd main surface 18b of the glass substrate 18 of glass laminate 10；CF formation process, using anti-
Lose liquid and form pattern, so as to form colour filter on the 2nd main surface 18b of the glass substrate 18 of another glass laminate 10
(CF)；And bonding process, the device substrate with TFT and the device substrate with CF are laminated.
In TFT formation process, CF formation process, using known photoetching technique, etching technique etc. in glass substrate 18
The 2nd main surface 18b formed TFT, CF.At this time, anti-corrosion liquid can be used as to the coating liquid of pattern formation.
In addition, before TFT, CF is formed, the 2nd main surface 18b of glass substrate 18 can also be carried out clearly as needed
Wash.Cleaning method can use known dry method to clean, wet-cleaning.
In bonding process, liquid crystal material is injected between the layered product with TFT and the layered product with CF by their layers
Gather into folds.As injection liquid crystal material method, such as have decompression injection method, drip injection method.
Separation circuit
Separation circuit is such process：Supporting substrates 16 with inorganic layer are obtained from the component formation process
The layered product 22 of having electronic device component peel off, acquisition includes electronic device component 20 and the electronics device of glass substrate 18
Part 24 (glass substrate of having electronic device component).That is, separation circuit is by the stacking of having electronic device component
The process that body 22 is separated into the glass substrate 24 of the supporting substrates 16 with inorganic layer and having electronic device component.
Electronic device component 20 when peeling off on glass substrate 18 is a part for required all member of formation
In the case of, also remaining member of formation can be formed on glass substrate 18 after releasing.
The method that the 1st main surface 18a of inorganic the layer surface 14a and glass substrate 18 of inorganic layer 14 are peeled away into (separation)
It is not particularly limited.Such as it can peel off as follows：By sharp cutlery shape component insertion inorganic layer 14 and glass base
Interface between plate 18 and give the initial point of stripping, and then water and the fluid-mixing of compressed air are blowed to the interface.
Preferably, it is located at upside with the supporting substrates 12 of the layered product 22 of having electronic device component, electronic device is used
The layered product 22 of having electronic device component is arranged on platform by the mode that 20 side of component is located at downside, by electronic device structure
20 side vacuum suction of part (in the case of being laminated with supporting substrates in two faces, carries out) successively on platform, in this condition,
Cutlery is inserted into the interface between inorganic layer 14 and glass substrate 18 first.Moreover, adsorbed afterwards using multiple vacuum suction pads
12 side of supporting substrates, and inserting certainly rises successively vacuum suction pad near the position of cutlery.So, in inorganic layer
Air layer is formed on interface between 14 and glass substrate 18, which expands to the entire surface at interface, so as to easy
Ground is peeled off by the supporting substrates 16 with inorganic layer.
In addition, for example, incited somebody to action in a manner of making a part for the supporting substrates 16 with inorganic layer be protruded from glass substrate 18
In the case that supporting substrates 16 with inorganic layer are laminated in glass substrate 18, following stripping means can be included：By glass substrate
18 are fixed on fixed station (with reference to the reference numeral 31 in Fig. 3 described later), give the initial point of stripping as described above and incite somebody to action
Inorganic layer 14 and glass substrate 18 are peeled away or make L font instruments in the case where not giving the initial point of stripping (with reference to aftermentioned
Fig. 3 in reference numeral 32) catch on inorganic layer surface 14a and by the supporting substrates 16 with inorganic layer to the side away from fixed station
To lifting, and inorganic layer 14 and glass substrate 18 are peeled away.
The electronic device 24 obtained by the process is suitable for manufacture mobile phone, smart mobile phone, PDA, tablet computer etc.
Small-sized display device used in mobile terminal.Display device is primarily referred to as LCD or OLED, LCD are included：TN types, STN types,
FE types, TFT types, mim type, IPS types, VA types etc..Any display device substantially in passive driving types, active-drive
In the case of can apply.
Embodiment
Hereinafter, the present invention is illustrated using embodiment etc., but the present invention is not limited by the example.
In following example (embodiment and comparative example), used as glass substrate by alkali-free borosilicate glass structure
Into glass plate (width 100mm, length 30mm, thickness 0.2mm, 38 × 10-7/ DEG C of linear expansion coefficient " AN100 " (commodity
Name, the manufacture of Asahi Glass company)).
In addition, as supporting substrates, glass plate (width 90mm, the length being made of alkali-free borosilicate glass have equally been used
Spend 30mm, thickness 0.5mm, linear expansion coefficient 38 × 10-7/ DEG C " AN100 " (trade name, Asahi Glass company manufacture)).
Example I-11, example I-14
Form the inorganic layer containing SiC
Make its purifying using a main surface of alkaline aqueous solution cleaning supporting substrates.Then, while using SiC target
Material simultaneously imports Ar gases to purifying face, while by magnetron sputtering method formed containing SiC inorganic layer (thickness 10nm,
Surface roughness is Ra0.4nm, also identical below), so as to obtain the supporting substrates with inorganic layer.
Example I-1~example I-10
Form the inorganic layer containing SiCO
Substitute Ar gases and import Ar and O2Mixed gas (volume ratio (Ar/O2)=39/1, in addition, with shape
The method same into the inorganic layer containing SiC forms the inorganic layer containing SiCO, so as to obtain the supporting base with inorganic layer
Plate.
Example I-12, example I-15
Form the inorganic layer containing SiN
Substitute SiC target material and used SiN targets, in addition, with the same side with forming the inorganic layer containing SiC
Method forms the inorganic layer containing SiN, so as to obtain the supporting substrates with inorganic layer.
Example I-13, example I-16
Form the inorganic layer containing SiNO
Substitute SiC target material and used SiN targets, in addition, with the side same with forming the inorganic layer containing SiCO
Method forms the inorganic layer containing SiNO, so as to obtain the supporting substrates with inorganic layer.
Evaluation
It is laminated the evaluation of maintenance
Then, make its purifying using the 1st main surface of alkaline aqueous solution cleaning glass substrate.Then, successively use
Alkaline aqueous solution and water clean the inorganic layer surface of the inorganic layer of the supporting substrates with inorganic layer of each example and glass substrate
Carried out the 1st purifying main surface so that two faces are purifying.Afterwards, glass substrate is overlapped in inorganic layer surface,
And crimped using vacuum and be laminated inorganic layer and glass substrate, so as to obtain glass laminate.
Then, the glass laminate of each example of acquisition is added with the condition of (a) shown in table 1 below~(d)
Heat treatment.In addition, in the case where not heated, in "-" described in table 1 below.In addition, the atmosphere as (d)
And it is documented in " air " expression " air atmosphere under atmospheric pressure state " in table 1 below.
Also, (also include situation about not heated) after a heating treatment, to the glass laminate of each example
Carry out cutting to fracture and grind, the stacking maintenance between inorganic layer and glass substrate with following benchmark evaluations.
In addition, " cutting fractures " is using the commercially available machinery progress cut and fractureed.Specifically, in each example
On two faces of glass laminate, line of cut is marked in a manner of making the location overlap of glass laminate of each example, afterwards, with
Supporting substrates is located at upside and make the line of cut mode consistent with edge of table that the side of glass laminate is fixed on platform
On, it is pressed downward opposite side and is broken.
In addition, during " grinding ", will in a manner of supporting substrates is located at upside and glass substrate is located at downside
Glass laminate is fixed on the cushion (Japanese of polyurethane：テ ー Block Le パ ッ De) on, using the mixed liquor of cerium oxide and water simultaneously
Using grinding pad grind within 5 minutes.
It the results are shown in table 1 below.As long as result is "○" or " △ ", it becomes possible to is evaluated as stacking maintenance
It is excellent.
○：Maintain the laminated arrangement between inorganic layer and glass substrate.
△：Laminated arrangement is substantially maintained, but is locally generating peeling.
×：Laminated arrangement deforms, and generates peeling on the whole.
The evaluation of fissility
Fig. 3 is the schematic cross sectional views for the evaluation method for representing fissility.
First, the inorganic layer surface of inorganic layer and the 1st main table of glass substrate are made in the same manner as the evaluation of stacking maintenance
Face is purifying.Afterwards, the aligned in position of the supporting substrates with inorganic layer and glass substrate of each example in the longitudinal direction is made, and
As shown in Figure 3 by the supporting substrates with inorganic layer of each example and glass substrate in overlapping of the mode alignd at one end
Come.Further, since the supporting substrates with inorganic layer and length on the width of glass substrate are different, therefore, when will be with nothing
The supporting substrates and glass substrate of machine layer with the mode alignd at one end it is overlapping when, in the other end, as shown in figure 3, with inorganic layer
Supporting substrates a part from glass substrate protrude.
After overlapping, make to produce closely sealed starting point between supporting substrates and glass substrate with inorganic layer, suppressed using vacuum
Crimped, so that it is all closely sealed in whole faying surface, it resulting in the glass laminate of each example.Afterwards, tieed up with stacking
The evaluation of holding property similarly, carries out the glass laminate of each example of acquisition with the condition of (a) shown in table 1 below~(d)
Heat.
Then, in air atmosphere with the glass laminate of 600 DEG C of each examples to acquisition implement 1 it is small when heating at
Reason.
Then, disbonded test has been carried out.Specifically, first, using two-sided tape by the glass base in glass laminate
2nd main surface of plate is fixed on fixed station (being represented in figure 3 with reference numeral 31).
Then, protruded as shown in figure 3, making L fonts instrument (being represented in figure 3 with reference numeral 32) catch on from glass substrate
The supporting substrates with inorganic layer inorganic layer surface and using machinery by the supporting substrates with inorganic layer to away from fixed station
Direction is lifted with the speed of 10mm/min, the fissility between inorganic layer and glass substrate with following benchmark evaluations.In addition, only
It is "○" to want result, it becomes possible to is evaluated as：Even if after long time treatment under the high temperature conditions, fissility is also excellent.
○：It can peel off.
×：It cannot peel off.
Table 1
As shown in the table 1, (a) programming rate is less than 300 DEG C/min, and (b) heating-up temperature is 150 DEG C~600 DEG C,
(c) retention time is more than 0.5 minute, and (d) atmosphere is the air atmosphere under atmospheric pressure state, in such example (embodiment)
In, stacking maintenance is excellent.
On the other hand, do not heated or the condition of (a)~(d) departs from the example (comparative example) of the condition
In, stacking maintenance is poor.
In addition, according to the result, it is thus identified that：In embodiment, the stripping at the interface between inorganic layer and supporting substrates
Intensity is more than the peel strength at the interface between inorganic layer and glass substrate.
Example II
In the present example, using the glass manufactured under the condition of example I-7 (on heating condition, with reference to the table 1)
Glass layered product has made OLED.
More specifically, molybdenum film is formed in the 2nd main surface of the glass substrate by sputtering method in glass laminate, and
Gate electrode is formd by using photolithographic etching.Then, by plasma CVD method in the glass base equipped with gate electrode
2nd main surface side of plate further forms a film according to the order of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon, then, passes through sputtering
Method forms molybdenum film, and forms gate insulating film, semiconductor element portion and source electrode/electric leakage by using photolithographic etching
Pole.Then, silicon nitride film is further formed in the 2nd main surface side of glass substrate by plasma CVD method to form passivation
Layer, afterwards, forms indium oxide tin film, and form pixel electrode by using photolithographic etching by sputtering method.
Then, in the 2nd main surface side of glass substrate, further by vapour deposition method, form a film in the following order：By 4,4 ',
It is hole injection layer that 4 "-three (3- methylphenylphenyl aminos) triphenylamines, which form a film, will double [(N- naphthyls)-N- phenyl] benzidine
Form a film as hole transporting layer, the double [4- [N- (4- of 40 volume %2,6- will be mixed with 8-hydroxyquinoline aluminium complex (Alq3)
Methoxyphenyl)-N- phenyl] aminostyryl] and naphthalene -1,5- dintrile (BSN-BCN) material film forming for luminescent layer, by Alq3
Form a film as electron transfer layer.Then, by sputtering method glass substrate the 2nd main surface side formed aluminium film, and by using
Photolithographic etching forms opposite electrode.Then, across purple in the 2nd main surface of the glass substrate formed with opposite electrode
The adhesive linkage of outside line curing type is bonded a glass substrate and is sealed again.It is being obtained by the step, have on the glass substrate
Layered product of the glass laminate of organic EL tectosomes equivalent to having electronic device component.
Then, it is 0.1mm's by thickness afterwards in platform to make the sealing side vacuum suction of the glass laminate of acquisition
Interface between the inorganic layer and glass substrate of the corner positions of stainless steel cutlery insertion glass laminate, and make band inorganic layer
Supporting substrates from glass laminate separate, so as to obtain oled panel (equivalent to electronic device.Hereinafter referred to as panel A).
IC drivers are connected to the panel A being fabricated to, and at normal temperatures and pressures drive IC drivers, as a result, in drive area
Do not find that display is uneven.
Example III
In the present example, using the glass manufactured under the condition of example I-7 (on heating condition, with reference to the table 1)
Glass layered product has made LCD.
Prepare two glass laminates, first, pass through glass substrate of the sputtering method in a wherein glass laminate
Molybdenum film is formed in 2nd main surface, and gate electrode is formd by using photolithographic etching.Then, plasma CVD is passed through
Method the glass substrate equipped with gate electrode the 2nd main surface side according to silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon order into
One one-step film forming, then, forms molybdenum film, and form gate insulating film by using photolithographic etching, partly lead by sputtering method
Body components Department and source/drain electrode.Then, it is further in the 2nd main surface side of glass substrate by plasma CVD method
Form silicon nitride film and form passivation layer, afterwards, indium oxide tin film is formed by sputtering method, and by using photolithographic erosion
Quarter forms pixel electrode.Then, it is coated with by rolling method in the 2nd main surface of the glass substrate formed with pixel electrode poly-
Imide resin liquid, and oriented layer is formed by heat cure, then it is ground.The glass laminate of acquisition is referred to as glassy layer
Stack X1.
Then, chromium is formed in the 2nd main surface of the glass substrate by sputtering method in wherein another glass laminate
Film, and form light shield layer by using photolithographic etching.Then, by squash type rubbing method in the glass equipped with light shield layer
The further coating chromatic photoresist of the 2nd main surface side of glass substrate, and colour filter is formd by photoetching process and heat cure.Then,
Indium oxide tin film is further formed by 2nd main surface side of the sputtering method in glass substrate, so as to form opposite electrode.Connect
, by squash type rubbing method in the 2nd main surface of the glass substrate equipped with opposite electrode coated UV line solidified resin liquid,
And column spacer is formd by photoetching process and heat cure.Then, by rolling method in the glass formed with column spacer
Polyimide resin liquid is coated with 2nd main surface of substrate, and oriented layer is formed by heat cure, is then ground.Then,
Pass through distributor method (Japanese：デ ィ ス ペ Application サ methods) in the 2nd main surface side of glass substrate sealing resin liquid is depicted as frame
Shape, and by dripping column liquid crystal Method by liquid crystal drop in frame, afterwards, using the glass laminate X1, by two glass laminates
The 2nd main surface side of glass substrate be bonded each other, and obtained by ultraviolet curing and heat cure with LCD faces
The layered product of plate.Hereinafter, the layered product here with LCD panel is referred to as to the layered product X2 of panel.
Then, two supporting substrates of the face with inorganic layer are peeled off from the layered product X2 of panel, so as to obtain by shape
Into the substrate for having tft array and the substrate formed with colour filter form LCD panel B (equivalent to electronic device).
IC drivers are connected to the LCD panel B being fabricated to, and at normal temperatures and pressures drive IC drivers, as a result,
Do not find that display is uneven in drive area.
The present invention is described in detail by with reference to specific embodiment, but the present invention can not depart from the spirit of the present invention
With make various changes, change on the premise of protection domain, this it will be apparent to those skilled in the art that.
The application is based on Japanese patent application 2013-233024 filed in 11 days November in 2013, using its content as ginseng
According to and be incorporated into this specification.
Description of reference numerals
10th, glass laminate；12nd, supporting substrates；14th, inorganic layer；14a, inorganic layer surface (in inorganic layer with support base
The surface of the opposite side in plate side)；16th, the supporting substrates with inorganic layer；18th, glass substrate；The 1st main table of 18a, glass substrate
Face；The 2nd main surface of 18b, glass substrate；20th, electronic device component；22nd, the layered product of having electronic device component；24、
Electronic device；31st, fixed station；32nd, L fonts instrument.
Claims (4)
1. a kind of manufacture method of glass laminate, obtains glass laminate, which includes by the manufacture method：
Supporting substrates with inorganic layer, its inorganic layer with supporting substrates and configuration on the supporting substrates；And glass substrate,
Itself so as to peel off mode be layered on the inorganic layer, wherein,
The manufacture method of the glass laminate includes following process：
Lamination process, the glass substrate is layered on the inorganic layer；And
Heating treatment step, is heated after the lamination process,
The inorganic layer contains at least 1 chosen from the group being made of carborundum, silicon oxide carbide, silicon nitride and silicon oxynitride
Kind material,
It is described to heat the condition for meeting following (a)~following (d)：
(a) programming rate：Less than 300 DEG C/min；
(b) heating-up temperature：150 DEG C~600 DEG C；
(c) retention time：More than 0.5 minute；And
(d) atmosphere：Air atmosphere or non-active gas atmosphere under atmospheric pressure state or the air atmosphere under decompression state or
Non-active gas atmosphere or vacuum atmosphere.
2. the manufacture method of glass laminate according to claim 1, wherein,
(a) programming rate is less than 200 DEG C/min.
3. the manufacture method of glass laminate according to claim 1 or 2, wherein,
The supporting substrates are glass plate.
4. a kind of manufacture method of electronic device, wherein, the manufacture method of the electronic device includes following process：
Component formation process, in the glass that the manufacture method by the glass laminate any one of claims 1 to 3 obtains
Electronic device component is formed on the surface of the glass substrate in glass layered product and obtains the layer of having electronic device component
Stack；And
Separation circuit, the supporting substrates with inorganic layer are peeled off from the layered product of the having electronic device component and are obtained
Electronic device with the glass substrate and the electronic device component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013233024A JP6119567B2 (en) | 2013-11-11 | 2013-11-11 | Method for manufacturing glass laminate and method for manufacturing electronic device |
| JP2013-233024 | 2013-11-11 |
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| Publication Number | Publication Date |
|---|---|
| CN104626664A CN104626664A (en) | 2015-05-20 |
| CN104626664B true CN104626664B (en) | 2018-05-01 |
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| CN201410643715.9A Expired - Fee Related CN104626664B (en) | 2013-11-11 | 2014-11-11 | The manufacture method of glass laminate and the manufacture method of electronic device |
Country Status (4)
| Country | Link |
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| JP (1) | JP6119567B2 (en) |
| KR (1) | KR20150054692A (en) |
| CN (1) | CN104626664B (en) |
| TW (1) | TWI622493B (en) |
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| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| WO2015157202A1 (en) | 2014-04-09 | 2015-10-15 | Corning Incorporated | Device modified substrate article and methods for making |
| TWI617437B (en) | 2012-12-13 | 2018-03-11 | 康寧公司 | Facilitated processing for controlling bonding between sheet and carrier |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| KR102353030B1 (en) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | Articles and methods for controlled bonding of thin sheets with carriers |
| CN106232351A (en) * | 2014-04-25 | 2016-12-14 | 旭硝子株式会社 | Glass laminate and the manufacture method of electronic device |
| JP2017165589A (en) * | 2014-08-01 | 2017-09-21 | 旭硝子株式会社 | Supporter substrate with inorganic film and glass laminate, manufacturing method thereof, and manufacturing method of electronic device |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| TW202216444A (en) | 2016-08-30 | 2022-05-01 | 美商康寧公司 | Siloxane plasma polymers for sheet bonding |
| TWI810161B (en) | 2016-08-31 | 2023-08-01 | 美商康寧公司 | Articles of controllably bonded sheets and methods for making same |
| CN111372772A (en) | 2017-08-18 | 2020-07-03 | 康宁股份有限公司 | Temporary bonding using polycationic polymers |
| JP6492140B1 (en) * | 2017-09-22 | 2019-03-27 | ジオマテック株式会社 | Resin substrate laminate and method of manufacturing electronic device |
| WO2019118660A1 (en) | 2017-12-15 | 2019-06-20 | Corning Incorporated | Method for treating a substrate and method for making articles comprising bonded sheets |
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| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
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| KR101471154B1 (en) * | 2008-06-17 | 2014-12-09 | 삼성디스플레이 주식회사 | Method for driving pixel and display apparatus for performing the method |
| CN102471129B (en) * | 2009-09-18 | 2015-04-15 | 日本电气硝子株式会社 | Method for producing glass film, method for treating glass film and glass film laminate |
| JP5748088B2 (en) * | 2010-03-25 | 2015-07-15 | 日本電気硝子株式会社 | Manufacturing method of glass substrate |
| JP2013184346A (en) * | 2012-03-07 | 2013-09-19 | Asahi Glass Co Ltd | Glass laminate, and method for producing electronic device |
| KR20150023312A (en) * | 2012-05-29 | 2015-03-05 | 아사히 가라스 가부시키가이샤 | Glass laminate and method for manufacturing electronic device |
| JP6593669B2 (en) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | Support glass substrate and carrier using the same |
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2013
- 2013-11-11 JP JP2013233024A patent/JP6119567B2/en active Active
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- 2014-11-11 CN CN201410643715.9A patent/CN104626664B/en not_active Expired - Fee Related
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|---|---|---|---|---|
| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
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| JP2015093795A (en) | 2015-05-18 |
| KR20150054692A (en) | 2015-05-20 |
| JP6119567B2 (en) | 2017-04-26 |
| TWI622493B (en) | 2018-05-01 |
| TW201527088A (en) | 2015-07-16 |
| CN104626664A (en) | 2015-05-20 |
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