CN104626664A - Production method of glass laminated body and production method of electronic device - Google Patents
Production method of glass laminated body and production method of electronic device Download PDFInfo
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- CN104626664A CN104626664A CN201410643715.9A CN201410643715A CN104626664A CN 104626664 A CN104626664 A CN 104626664A CN 201410643715 A CN201410643715 A CN 201410643715A CN 104626664 A CN104626664 A CN 104626664A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/04—Time
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/14—Velocity, e.g. feed speeds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/60—In a particular environment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Laminated Bodies (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides a production method of a glass laminated body and a production method of an electronic device. By adopting the production method, the glass laminated body can be provided. The glass laminated body comprises a supporting substrate provided with an inorganic layer, the inorganic layer provided with the supporting substrate, and the inorganic layer disposed on the supporting substrate; a glass substrate, which can be peelably disposed on the inorganic layer in a laminated manner. The production method of the glass layer laminated body is comprises the following steps: a laminated process, the glass substrate layer is disposed on the inorganic layer; a heating processing step, the heating process can be carried out after the laminated process. The inorganic layer comprises at least one of carborundum, SiOCH, silicon nitride, and silicon oxynitride structures. The heating process is required to satisfy the following requirements: (a) the temperature rising speed: lower than 300DEG C/min; (b) the heating temperature is in a range from 150DEGC to 600DEGC; (c) maintaining time is more than 0.5min; (d) the atmosphere is the air atmosphere or the non-active air atmosphere under the barometric pressure, or the air atmosphere, the non-active air atmosphere, or the vacuum atmosphere under the reduced pressure.
Description
Technical field
The present invention relates to the manufacture method of glass laminate and the manufacture method of electronic device.
Background technology
In recent years, slimming, the lightweight of the electronic devices (electronic equipment) such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED) are advancing, thus the thin plateization of the glass substrate that these electronic devices are used also advances.On the other hand, when causing the intensity of glass substrate not enough because of thin plate, the treatability of glass substrate can be made in the manufacturing process of electronic device to reduce.
Therefore, recently, from the viewpoint of the treatability improving glass substrate, a kind of following method is proposed: the duplexer preparing the inorganic thin film of supporting glass glass substrate being layered in band inorganic thin film, the glass substrate of duplexer is implemented the manufacture process of element, afterwards, glass substrate is made to be separated with duplexer (patent document 1).
Patent document 1: Japanese Laid-Open 2011-184284 publication
Summary of the invention
the problem that invention will solve
The present inventors are studied the inorganic layer (inorganic thin film) be configured on supporting substrates (supporting glass) on the basis of patent document 1.Found that, when adopting the specific composition of not concrete record in patent document 1 at the composition as inorganic layer, the fissility when being peeled off by the glass substrate on inorganic layer is excellent.
In addition, in the method described in patent document 1, heat after stacked.Therefore, the present inventors, after being layered in by glass substrate on the inorganic layer using described specific composition, heat under the condition that patent document 1 is specifically recorded.Found that, the duplexer after having carried out this heating is implemented cutting fracture (Japanese: cut り and roll over り), grinding time, sometimes cannot sustaining layer overlapping state.In this case, when the glass substrate of the duplexer carrying out this heating forms component used for electronic device, glass substrate can peel off, and this may make the electronic device of acquisition produce unfavorable condition.
The present invention considers above problem points and makes, its object is to, the manufacture method of the manufacture method that the glass laminate of the stacked maintenance excellence making to be configured between inorganic layer on supporting substrates and glass substrate is provided and the electronic device using this glass laminate.
for the scheme of dealing with problems
The present inventors conduct in-depth research to realize described order, found that, when adopting specific composition at the composition as inorganic layer, by heating under given conditions after glass substrate is layered on inorganic layer, the laminated arrangement between inorganic layer and glass substrate can be maintained, this completes the present invention.
That is, the invention provides following technical scheme (1) ~ technical scheme (4).
Technical scheme (1) provides a kind of manufacture method of glass laminate, glass laminate is obtained by this manufacture method, this glass laminate comprises: the supporting substrates of band inorganic layer, and it has supporting substrates and is configured in the inorganic layer on described supporting substrates; And glass substrate, it is layered on described inorganic layer in the mode that can peel off, and wherein, the manufacture method of this glass laminate comprises following operation: lamination process, is layered in by described glass substrate on described inorganic layer; And heating treatment step, heat after described lamination process, described inorganic layer contains at least a kind of material chosen from the group be made up of carborundum, silicon oxide carbide, silicon nitride and silicon oxynitride, and described heating meets the condition of following (a) ~ following (d):
(a) programming rate: less than 300 DEG C/min; (b) heating-up temperature: 150 DEG C ~ 600 DEG C; (c) retention time: more than 0.5 minute; And (d) atmosphere: the air atmosphere under the air atmosphere under atmospheric pressure state or non-active gas atmosphere or decompression state or non-active gas atmosphere or vacuum atmosphere.
Technical scheme (2) is the manufacture method of the glass laminate according to described technical scheme (1), and wherein, described (a) programming rate is less than 200 DEG C/min.
Technical scheme (3) is the manufacture method of the glass laminate according to described technical scheme (1) or technical scheme (2), and wherein, described supporting substrates is glass substrate.
Technical scheme (4) provides a kind of manufacture method of electronic device, wherein, the manufacture method of this electronic device comprises following operation: component formation process, the surface of the described glass substrate in the glass laminate that the manufacture method by the glass laminate according to any one of described technical scheme (1) ~ technical scheme (3) obtains forms component used for electronic device and obtains the duplexer of having electronic device component; And separation circuit, the supporting substrates of described band inorganic layer is peeled off from the duplexer of described having electronic device component and obtains the electronic device with described glass substrate and described component used for electronic device.
the effect of invention
Adopt the present invention, the manufacture method of the manufacture method that the glass laminate of the stacked maintenance excellence making to be configured between inorganic layer on supporting substrates and glass substrate can be provided and the electronic device using this glass laminate.
Accompanying drawing explanation
Fig. 1 is the schematic cross sectional views of the embodiment representing glass laminate of the present invention.
(A) of Fig. 2 and (B) of Fig. 2 is the process chart of the manufacture method of electronic device of the present invention.
Fig. 3 is the schematic cross sectional views of the evaluation method representing fissility.
Detailed description of the invention
Below, the preferred configuration of the manufacture method of glass laminate of the present invention and electronic device is described with reference to accompanying drawing, but the present invention is not limited to following embodiment, and can apply various distortion and replacement to following embodiment without departing from the scope of the present invention.
The glass laminate obtained by the manufacture method of glass laminate of the present invention is made to have employed specific composition inorganic layer substantially and forms between supporting substrates and glass substrate, thus, even if after carrying out the process under hot conditions, the fissility between inorganic layer and glass substrate is also excellent.
Below, first, the preferred embodiment of glass laminate is described in detail, afterwards, the preferred embodiment of the manufacture method of the manufacture method describing this glass laminate in detail and the electronic device using this glass laminate.
glass laminate
Fig. 1 is the schematic cross sectional views of an embodiment of glass laminate of the present invention.
As shown in Figure 1, glass laminate 10 has supporting substrates 16 and the glass substrate 18 of band inorganic layer, and the supporting substrates 16 of this band inorganic layer is made up of supporting substrates 12 and inorganic layer 14.In glass laminate 10, will the 1st first type surface 18a of the surperficial 14a (surface of the side contrary with supporting substrates 12 side) of the inorganic layer of the inorganic layer 14 of the supporting substrates 16 of inorganic layer and glass substrate 18 be with as lamination surface by stacked in the mode that can peel off for the supporting substrates 16 and glass substrate 18 being with inorganic layer.That is, the face of the side of inorganic layer 14 is fixed on supporting substrates 12, and the face of its opposite side contacts with the 1st first type surface 18a of glass substrate 18, and the interface between inorganic layer 14 and glass substrate 18 is closely sealed in the mode that can peel off.In other words, inorganic layer 14 possesses easy fissility relative to the 1st first type surface 18a of glass substrate 18.
In addition, use this glass laminate 10 till component formation process described later.That is, use this glass laminate 10 till the 2nd first type surface 18b at this glass substrate 18 forms the components used for electronic device such as liquid crystal indicator on the surface.Afterwards, the interface of supporting substrates 16 between glass substrate 18 of band inorganic layer is stripped, and the supporting substrates 16 of band inorganic layer does not become the component forming electronic device.The supporting substrates 16 of separated band inorganic layer can be stacked with new glass substrate 18, and can be reused as new glass laminate 10.
In the present invention, described fixing closely sealed upper different in peel strength (namely peeling off required stress) from (can peel off), refer to that fixing peel strength is larger than closely sealed peel strength.Specifically, the peel strength at the interface between inorganic layer 14 and supporting substrates 12 is greater than the peel strength at the interface between inorganic layer 14 in glass laminate 10 and glass substrate 18.
In addition, closely sealed the referring to that can peel off can be peeled off, and refers to peel off under the prerequisite peeled off occurs in the face not making to be fixed wtih.That is, refer in glass laminate 10 of the present invention, when having carried out the operation making glass substrate 18 be separated with supporting substrates 12, peel off in closely sealed face (interface between inorganic layer 14 and glass substrate 18), do not peel off in the face be fixed wtih.Thus, when carrying out glass laminate 10 to be separated into the operation of glass substrate 18 and supporting substrates 12, glass laminate 10 is separated into these two parts of supporting substrates 16 of glass substrate 18 and band inorganic layer.
Below, first, describe supporting substrates 16 and the glass substrate 1 of the band inorganic layer forming glass laminate 10 in detail, afterwards, describe the manufacturing step (manufacture method of glass laminate of the present invention) of glass laminate 10 in detail.
with the supporting substrates of inorganic layer
Supporting substrates 16 with inorganic layer comprises supporting substrates 12 and configuration (fixing) inorganic layer 14 on the surface of supporting substrates 12.Inorganic layer 14 is snugly configured at the mode that can peel off and glass substrate 18 phase described later the outermost be with in the supporting substrates 16 of inorganic layer.
Below, the embodiment of supporting substrates 12 and inorganic layer 14 is described in detail.
supporting substrates
Supporting substrates 12 is substrates as following: it has the 1st first type surface and the 2nd first type surface and coordinate with the inorganic layer 14 be configured on the 1st first type surface and supports and reinforcing glass substrate 18, and the distortion, scratch, breakage etc. of glass substrate 18 when preventing the manufacture of component used for electronic device in component formation process described later (manufacturing the operation of component used for electronic device).
As supporting substrates 12, the metallic plates etc. such as such as glass plate, plastic plate and SUS plate can be used.Supporting substrates 12, is preferably formed by the material that the difference of the linear expansion coefficient between glass substrate 18 is less with in heat treated situation in component formation process, is more preferably formed by the material identical with glass substrate 18.That is, supporting substrates 12 is preferably glass plate.The glass plate of supporting substrates 12 particularly preferably for being made up of the glass material identical with glass substrate 18.
The thickness of supporting substrates 12 both can be thicker than glass substrate 18 described later, also can be thinner than glass substrate 18 described later.Preferably, the thickness of supporting substrates 12 is selected based on the thickness of the thickness of glass substrate 18, the thickness of inorganic layer 14 and glass laminate described later 10.Such as be designed to process the substrate that thickness is 0.5mm in current component formation process and the thickness sum of the thickness of glass substrate 18 and inorganic layer 14 is 0.1mm, then the thickness of supporting substrates 12 is set to 0.4mm.In normal circumstances, the thickness of supporting substrates 12 is preferably 0.2mm ~ 5.0mm.
When supporting substrates 12 is glass plates, from the viewpoint of easily process, not easily crack, the thickness of glass plate is preferably more than 0.08mm.In addition, from the viewpoint of expect glass plate have formed to peel off after component used for electronic device time glass plate moderately can bend and not crack such rigidity, the thickness of glass plate is preferably below 1.0mm.
inorganic layer
Inorganic layer 14 is layers that configuration (fixing) contacts with the 1st first type surface 18a of glass substrate 18 on the 1st first type surface of supporting substrates 12.In the present invention, contain from (following by carborundum, also be marked as " SiC "), silicon oxide carbide is (following, also be marked as " SiCO "), silicon nitride is (following, also be marked as " SiN ") and the group that forms of silicon oxynitride (following, be also marked as " SiNO ") at least a kind of material choosing as the composition of inorganic layer 14.In addition, the composition of inorganic layer 14 can pass through X-ray photoelectron spectroscopy (XPS) and measures.
By being arranged on supporting substrates 12 by such inorganic layer 14, even if after long time treatment under the high temperature conditions, that also can suppress between inorganic layer 14 with glass substrate 18 is bonding, thus fissility is excellent.Its reason is still not clear, but can think, its reason is, by making the difference of the electronegativity between Si and C or N less, thus not easily makes the generation of the chemical bond between inorganic layer and glass substrate change from more weak combination to stronger combination.
In addition, in the present invention, the surface roughness Ra of inorganic layer surface 14a is preferably below 2.00nm, is more preferably below 1.00nm, from the viewpoint of stackability and fissility, more preferably 0.20nm ~ 1.00nm.In addition, Ra (arithmetic average roughness) measures according to Japanese Industrial Standards JIS B 0601 (calendar year 2001 revision).The content of Japanese Industrial Standards JIS B 0601 (calendar year 2001 revision) is incorporated herein as reference.
The average coefficient of linear expansion of inorganic layer 14 at 25 DEG C ~ 300 DEG C is (following, simply referred to as " average coefficient of linear expansion ") be not particularly limited, when glass plate is used as supporting substrates 12, the average coefficient of linear expansion of inorganic layer 14 is preferably 10 × 10-7/ DEG C ~ 200 × 10-7/ DEG C.As long as the average coefficient of linear expansion of inorganic layer 14 is within the scope of this, inorganic layer 14 and glass plate (SiO will be made
2) between the difference of average coefficient of linear expansion diminish, can suppress to misplace in high temperature environments between the supporting substrates 16 of glass substrate 18 and band inorganic layer.
The preferred at least a kind of material containing choosing from the group be made up of described SiC, SiCO, SiN and SiNO of inorganic layer 14 is as main component.At this, main component refers to, for inorganic layer 14 total amount, total amount of these compositions is more than 90 quality %, is preferably more than 98 quality %, is more preferably more than 99 quality %, is particularly preferably more than 99.999 quality %.
As the thickness of inorganic layer 14, from the viewpoint of marresistance, be preferably 5nm ~ 5000nm, be more preferably 10nm ~ 500nm.
In FIG, inorganic layer 14 is recorded into individual layer, but inorganic layer 14 also can stacked two-layer more than.When stacked two-layer more than, inorganic layer 14 also can be the mutually different composition of each layer.In addition, in this case, " thickness of inorganic layer " refers to the aggregate thickness of all layers.
Usually, inorganic layer 14 is located at whole of supporting substrates 12 as shown in Figure 1, but in the scope not affecting effect of the present invention, inorganic layer 14 also can be located at the part on supporting substrates 12 surface.Such as, inorganic layer 14 also can be arranged on supporting substrates 12 on the surface with island, striated.
Inorganic layer 14 illustrates excellent heat resistance.Therefore, even if glass laminate 10 is exposed under the high temperature conditions, also the chemical change of inorganic layer itself is not easily caused, between inorganic layer 14 and glass substrate described later 18, also not easily produce chemical bond, thus not easily produce the situation that inorganic layer 14 that re-separation (Japanese: Chong Bao Fromization) causes is attached to glass substrate 18.
At this, re-separation refers to, the peel strength at the interface between inorganic layer 14 and glass substrate 18 is greater than any one intensity in the intensity (bulk strength: bulk strength) of the peel strength at the interface between supporting substrates 12 and inorganic layer 14 and the material of inorganic layer 14 itself.If the interface between inorganic layer 14 and glass substrate 18 produces re-separation, then the composition of inorganic layer 14 is easily attached to glass substrate 18 surface and easily makes the purifying of the surface of glass substrate 18 become difficulty.Inorganic layer 14 is attached to glass substrate 18 surface and refers to, whole inorganic layer 14 is attached to glass substrate 18 surface and inorganic layer 14 surface and damage occurs and makes a part for the composition on inorganic layer 14 surface be attached to the situations such as glass substrate 18 surface.
the manufacture method of the supporting substrates with inorganic layer
As the manufacture method of the supporting substrates 16 of band inorganic layer, the methods such as such as vapour deposition method, sputtering method or CVD can be adopted, when for sputtering method, specifically, such as, following method can be listed: use SiC target material or SiN target and import the non-active gas such as Ar or non-active gas and O
2or CO
2deng the mist containing oxygen atom gas, supporting substrates 12 arranges inorganic layer 14.In addition, as manufacturing condition, suitably optimum condition can be selected according to used material etc.
In addition, after supporting substrates 12 is formed inorganic layer 14, in order to control the surface roughness Ra of inorganic layer surface 14a, the process surface of inorganic layer 14 being carried out to smooth (Japanese: cut Ru) can be implemented.As this process, such as ion sputtering process etc. can be listed.
glass substrate
Glass substrate 18 its 1st first type surface 18a and inorganic layer 14 closely sealed, and be provided with component used for electronic device described later on the 2nd first type surface 18b of the side contrary with inorganic layer 14 side.
About the kind of glass substrate 18, it can be common glass substrate, can list the glass substrate etc. of the such display unit of such as LCD, OLED.The chemical proofing of glass substrate 18, resistance to excellent moisture permeability, and percent thermal shrinkage is lower.As the index of percent thermal shrinkage, the linear expansion coefficient of regulation in Japanese Industrial Standards JIS R 3102 (nineteen ninety-five correction) can be used.The content of Japanese Industrial Standards JIS R 3102 (nineteen ninety-five revision) is incorporated herein as reference.
Glass substrate 18 can by by frit melting, melten glass is configured as tabular and obtains.This manufacturing process can be common manufacturing process, can use such as float glass process, fusion method, slot draw method, vertical drawing process (fourcault process), mechanical cylinder process (Labbers process) etc.In addition, especially the glass substrate of thinner thickness utilize by the glass heats being temporarily configured as tabular to shapable temperature and the method (horizontal sheet process) of being undertaken stretching by methods such as stretchings and making it thinning shaping obtain.
The glass of glass substrate 18 is not particularly limited, be preferably alkali-free pyrex, pyrex, soda-lime glass, vagcor and other take silica as the oxide based glass of main component.As oxide based glass, the content being preferably the silica converted based on oxide is the glass of 40 quality % ~ 90 quality %.
As the glass of glass substrate 18, the kind of applicable device, the glass of its manufacturing process can be adopted.Such as, the glass substrate of liquid crystal panel easily has an impact to liquid crystal due to the stripping of alkali metal component, is therefore made up of (wherein, generally including alkaline earth metal component) the glass (alkali-free glass) of alkali-free metal ingredient in fact.Like this, the glass of glass substrate 18 suitably can be selected based on the kind of be suitable for device and its manufacturing process.
The thickness of glass substrate 18 is not particularly limited, but considers from the slimming of glass substrate 18 and/or light-weighted viewpoint, and the thickness of glass substrate 18 is generally below 0.8mm, is preferably below 0.3mm, more preferably below 0.15mm.When the thickness of glass substrate 18 is greater than 0.8mm, the slimming of glass substrate 18 and/or light-weighted requirement can not be met.When the thickness of glass substrate 18 is below 0.3mm, the flexibility that glass substrate 18 is good can be given.When the thickness of glass substrate 18 is below 0.15mm, glass substrate 18 can be rolled into web-like.In addition, from the viewpoint of making the process that is easy to manufacture, glass substrate 18 of glass substrate 18 easy, the thickness of glass substrate 18 is preferably more than 0.03mm.
In addition, glass substrate 18 also can be made up of two-layer above material, and in this case, the material forming each layer both can be congener material, also can be different types of material.In addition, in this case, " thickness of glass substrate " refers to the aggregate thickness of all layers.
Also can on the 1st first type surface 18a of glass substrate 18 further stacked inorganic thin film layer.
When inorganic thin film layer configuration (fixing) is on glass substrate 18, in glass laminate, the inorganic layer 14 of the supporting substrates 16 of band inorganic layer contacts with inorganic thin film layer.By inorganic thin film layer is arranged on glass substrate 18, even if after long time treatment under the high temperature conditions, also can suppress further glass substrate 18 and band inorganic layer supporting substrates 16 between bonding.
The embodiment of inorganic thin film layer is not particularly limited, but preferably, inorganic thin film layer contains at least a kind of material chosen from the group be made up of metal oxide, metal nitride, metal oxynitride, metal carbides, carbonitride, metal silicide and metal fluoride.Wherein, from the viewpoint of making, the fissility of glass substrate 18 is more excellent, and inorganic thin film layer, preferably containing metal oxide, more preferably contains tin indium oxide.
As metal oxide, metal nitride, metal oxynitride, oxide, nitride, the nitrogen oxide of the element of more than a kind that such as chooses from Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In and Ba can be listed.More specifically, titanium oxide (TiO can be listed
2), indium oxide (In
2o
3), tin oxide (SnO
2), zinc oxide (ZnO), gallium oxide (Ga
2o
3), tin indium oxide (ITO), indium zinc oxide (IZO), zinc-tin oxide (ZTO) and gallium-doped zinc oxide (GZO) etc.
As metal carbides, carbonitride, carbide, the carbonitride of the element of more than a kind that such as chooses from Ti, W, Si, Zr, Nb can be listed.As metal silicide, the silicide of the element of more than a kind that such as chooses from Mo, W, Cr can be listed.As metal fluoride, the fluoride of the element of more than a kind that such as chooses from Mg, Y, La, Ba can be listed.
glass laminate
Glass laminate 10 of the present invention be using the inorganic layer of the supporting substrates 16 of described band inorganic layer surface 14a and the 1st first type surface 18a of glass substrate 18 as lamination surface by the duplexer that the supporting substrates 16 of band inorganic layer and glass substrate 18 are laminated in the mode that can peel off.In other words, glass laminate 10 of the present invention is inorganic layer 14 duplexers between supporting substrates 12 and glass substrate 18.
the manufacture method of glass laminate
lamination process
The manufacture method of glass laminate of the present invention has the lamination process be layered in by glass substrate 18 on inorganic layer 14.At this, as the method for laminated glass substrate 18, it is not particularly limited, specifically, following method can be listed: by after the supporting substrates 16 of band inorganic layer and glass substrate 18 overlap under atmospheric pressure environment, such as under the effect of the deadweight of glass substrate 18 or by gently pressing the 2nd first type surface 18b of glass substrate 18 at a place, thus make to produce closely sealed starting point in faying surface, closely sealed lighting from this is closely sealed is expanded naturally; Use roller, pressing plate the band supporting substrates 16 of inorganic layer and glass substrate 18 to be crimped and make closely sealedly from closely sealed, to light expansion etc.Utilize roller, pressing plate crimp, except make inorganic layer 14 and glass substrate 18 closely sealed further, the bubble removal that can also will be mixed between inorganic layer 14 and glass substrate 18 relatively easily, so preferably.
In addition, if laminate method by vacuum, Vacuum Pressure method for making crimps, then bubble preferably can be suppressed to be mixed into, guarantee good closely sealed, be therefore preferred.By crimping under vacuum, also have advantage as follows: when remaining small bubble, bubble does not become large yet because of heating, thus not easily causes straining defect.
When making the supporting substrates 16 of band inorganic layer closely sealed in the mode that can peel off with glass substrate 18, preferably, the fully face of the side contacted with each other of cleaning inorganic layer 14 and glass substrate 18, and under the environment that cleanliness factor is higher, they are stacked.Because the higher flatness of cleanliness factor is better, so preferably.
The method of cleaning is not particularly limited, and can list and such as after the surface with alkaline aqueous solution cleaning inorganic layer 14 or glass substrate 18, use water to carry out the method for cleaning further.
heating treatment step
The manufacture method of glass laminate of the present invention has the heating treatment step carrying out heating after lamination process, and this heating meets the condition of following (a) ~ following (d):
(a) programming rate: less than 300 DEG C/min;
(b) heating-up temperature: 150 DEG C ~ 600 DEG C;
(c) retention time: more than 0.5 minute; And
(d) atmosphere: the air atmosphere under the air atmosphere under atmospheric pressure state or non-active gas atmosphere or decompression state or non-active gas atmosphere or vacuum atmosphere.
When being with the supporting substrates 16 of inorganic layer to have have employed described composition inorganic layer 14, by implementing the heating of the condition meeting (a) ~ (d), thus make stacked maintenance excellent.Can think, its reason is, in lamination process, act on the interface between inorganic layer 14 and glass substrate 18 be more weak molecular separating force (such as, Van der Waals force, hydrogen bond etc.), on the other hand, if apply suitable heat in the scope of the condition of described (a) ~ (d), then except this molecular separating force, also produce the oxygen diffusion reaction of appropriateness in interface, improve bonding force thus.
If (a) programming rate is more than 300 DEG C/min, then stacked maintenance is poor, as long as programming rate is less than 300 DEG C/min, stacked maintenance is just excellent.From the viewpoint of making the localized delamination of heating midway less and making that stacked maintenance state is all even in face makes stacked maintenance more excellent, a () programming rate is preferably less than 250 DEG C/min, be more preferably less than 200 DEG C/min, more preferably less than 100 DEG C/min.In addition, (a) programming rate is preferably more than 0.1 DEG C/min.
B () heating-up temperature is the temperature kept after heating up with the programming rate of described (a), if be less than 150 DEG C, then stacked maintenance is poor, as long as in the scope of 150 DEG C ~ 600 DEG C, stacked maintenance is just excellent and fissility is also excellent.From the viewpoint of making, stacked maintenance is more excellent, and (b) heating-up temperature is preferably more than 200 DEG C, is more preferably 250 DEG C ~ 350 DEG C.
C () retention time is time of the heating-up temperature keeping described (b), if be less than 0.5 minute (30 seconds), then stacked maintenance is poor, as long as be more than 0.5 minute (30 seconds), stacked maintenance is just excellent.From the viewpoint of making, stacked maintenance is more excellent, and (c) retention time is preferably 1 minute ~ 60 minutes, is more preferably 3 minutes ~ 10 minutes.
D () atmosphere is atmosphere when carrying out heating up under the condition of described (a) and heat under condition of described (b) and (c), as long as be air atmosphere under air atmosphere under atmospheric pressure state or non-active gas atmosphere or decompression state or non-active gas atmosphere or vacuum atmosphere, be just not particularly limited.At this, as non-active gas, such as Ar gas, N can be listed
2gas etc.
The glass laminate 10 obtained by the manufacture method of glass laminate of the present invention can be used as various uses, can list and such as manufacture display unit panel described later, purposes etc. that PV, thin-film secondary battery, surface are formed with the electronic components such as the semiconductor crystal wafer of circuit.In addition, when this purposes, mostly glass laminate 10 is exposed to (such as more than 1 hour) under hot conditions (such as more than 350 DEG C).
At this, display unit panel comprises: LCD, OLED, Electronic Paper, field emission panel, quantum dot LED panel, MEMS (Micro E1ectro Mechanica1Systems: microelectromechanical systems) shutter face plate (Japanese: シ ャ ッ タ ー パ ネ Le) etc.
electronic device and its manufacture method
Then, the preferred embodiment of electronic device and its manufacture method is described in detail.
Fig. 2 is the schematic cross sectional views of each manufacturing process in the preferred embodiment of the manufacture method representing electronic device of the present invention successively.The preferred embodiment of electronic device of the present invention comprises component formation process and separation circuit.
Below, the step of material and each operation used in each operation is described in detail with reference to Fig. 2.First, component formation process is described in detail.
component formation process
Component formation process is the operation glass substrate in glass laminate being formed component used for electronic device.
More specifically, as shown in (A) of Fig. 2, in this operation, the 2nd first type surface 18b of glass substrate 18 forms component 20 used for electronic device, thus the duplexer 22 of fabricated ribbon component used for electronic device.
First, describe the component used for electronic device 20 used in this operation in detail, describe the step of operation afterwards in detail.
component used for electronic device (functional element)
Component at least partially on the 2nd first type surface 18b that component 20 used for electronic device is formed in the glass substrate 18 in glass laminate 10 and for forming electronic device.More specifically, as component 20 used for electronic device, display unit panel, solar cell, thin-film secondary battery or surface can be listed and be formed with the component that the electronic components etc. such as the semiconductor crystal wafer of circuit use.Display unit panel comprises: organic EL panel, field emission panel etc.
Such as component used for solar batteries, silicon type component used for solar batteries can list as the transparency electrode such as tin oxide of positive pole, with the silicon layer that p layer/i layer/n layer represents and the metal etc. as negative pole, the component used for solar batteries of other types can list the various components etc. corresponding with compound type, dye sensitization type, quantum point type etc.
In addition, as thin-film secondary battery component, can list in type lithium ion as the transparency electrode such as metal or metal oxide of positive pole and negative pole, the lithium compound as dielectric substrate, the metal as current collection layer, resin etc. as sealant, the thin-film secondary battery component of other types can list the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc.
In addition, as electronic component component, can list the metal as conductive part, the silica as insulation division, silicon nitride etc. in CCD, CMOS, other electronic component components can list the various components etc. corresponding with the various sensor of pressure sensor acceleration sensor, rigidity printed base plate, flexible printing substrate, rigid and flexibility printed base plate etc.
the step of operation
The manufacture method of the duplexer 22 of described having electronic device component is not particularly limited, and known method can be utilized on the 2nd first type surface 18b of the glass substrate 18 of glass laminate 10 to form component 20 used for electronic device according to the kind of the member of formation of component used for electronic device.
In addition, component 20 used for electronic device is not whole (hereinafter referred to as " whole components ") of the component be finally formed on the 2nd first type surface 18b of glass substrate 18, can be the part (hereinafter referred to as " partial component ") in whole component yet.Also can using the glass substrate of band portion component glass substrate (suitable with electronic device described later) as the whole component of band in operation afterwards.In addition, also can at other components used for electronic device of the upper formation of release surface (the 1st first type surface) of the glass substrate of the whole component of band.And, also can be that the duplexer of the whole component of band is assembled, afterwards, the duplexer of the supporting substrates 16 of band inorganic layer from the whole component of band be peeled off, thus manufactures electronic device.Further, also can be use two to be with the duplexer of whole component to assemble electronic device, afterwards, the duplexer of the supporting substrates 16 of two band inorganic layers from the whole component of band be peeled off, thus manufactures the electronic device with two glass substrates.
Such as to manufacture the situation of OLED, the surface in order to the 2nd first type surface 18b of the glass substrate 18 in glass laminate 10 forms organic EL tectosome, and carry out following various layer formation, processing operation: form transparency electrode; And then on the face being formed with transparency electrode evaporation hole injection layer, hole transporting layer, luminescent layer, electron supplying layer etc.; Form backplate; Sealing plate is used to seal etc.As the formation of these layers, processing operation, specifically, the bonding process etc. of such as film forming process, vapor deposition treatment, sealing plate can be listed.
In addition, the manufacture method of such as TFT-LCD has the various operations such as following operation: TFT formation process, uses anti-corrosion liquid on the metal film formed by the common membrane formation process such as CVD and sputtering method and metal oxide film, form pattern thus form thin film transistor (TFT) (TFT) on the 2nd first type surface 18b of the glass substrate 18 of glass laminate 10; CF formation process, uses anti-corrosion liquid to form pattern, thus form colour filter (CF) on the 2nd first type surface 18b of the glass substrate 18 of another glass laminate 10; And bonding process, by stacked for the device substrate of the device substrate of band TFT and band CF.
In TFT formation process, CF formation process, known photoetching technique, etching technique etc. are adopted to form TFT, CF at the 2nd first type surface 18b of glass substrate 18.Now, anti-corrosion liquid can be used as the coating liquid that pattern is formed.
In addition, before formation TFT, CF, also can clean the 2nd first type surface 18b of glass substrate 18 as required.Cleaning method can use the cleaning of known dry method, wet-cleaning.
In bonding process, between the duplexer and the duplexer of band CF of band TFT, inject liquid crystal material they are stacked.As the method injecting liquid crystal material, such as, there is decompression injection method, drip injection method.
separation circuit
Separation circuit is such operation: peeled off from the duplexer 22 of the having electronic device component obtained described component formation process by the supporting substrates 16 of band inorganic layer, obtain the electronic device 24 (glass substrate of having electronic device component) comprising component 20 used for electronic device and glass substrate 18.That is, separation circuit is the operation duplexer 22 of having electronic device component being separated into the band supporting substrates 16 of inorganic layer and the glass substrate 24 of having electronic device component.
Component used for electronic device 20 when peeling off on glass substrate 18 is a part for required all member of formation, also can after releasing remaining member of formation be formed on glass substrate 18.
The inorganic layer of inorganic layer 14 surface 14a is not particularly limited with the method that the 1st first type surface 18a of glass substrate 18 peels away (separation).Such as can peel off as follows: sharp cutlery shape component inserted the interface between inorganic layer 14 and glass substrate 18 and gives the initial point of stripping, afterwards, then water and compressed-air actuated fluid-mixing being blowed to this interface.
Preferably, with the supporting substrates 12 of the duplexer 22 of having electronic device component be positioned at upside, component used for electronic device 20 side be positioned at downside mode the duplexer 22 of having electronic device component is arranged on platform, by component 20 side used for electronic device vacuum suction on platform (when two faces are all laminated with supporting substrates, carry out successively), in this condition, first cutlery is inserted the interface between inorganic layer 14 and glass substrate 18.And, utilize multiple vacuum suction pad to adsorb supporting substrates 12 side afterwards, and make vacuum suction pad increase successively near the position certainly inserting cutlery.So, the interface between inorganic layer 14 and glass substrate 18 forms air layer, and this air layer expands to whole of interface, thus can easily be peeled off by the supporting substrates 16 of band inorganic layer.
In addition, such as, when to make a part for the supporting substrates 16 of band inorganic layer, from the mode that glass substrate 18 is outstanding, the supporting substrates 16 of band inorganic layer is laminated in glass substrate 18, following stripping means can be listed: be fixed on by glass substrate 18 on fixed station (Reference numeral 31 with reference in Fig. 3 described later), give the initial point of stripping as described above and inorganic layer 14 and glass substrate 18 peeled away or makes when not giving the initial point peeled off L font instrument (Reference numeral 32 with reference in Fig. 3 described later) catch on inorganic layer surface 14a and the supporting substrates 16 of inorganic layer will be with to mention to the direction away from fixed station, and inorganic layer 14 and glass substrate 18 are peeled away.
The electronic device 24 obtained by described operation is applicable to the small-sized display unit that the mobile terminals such as manufacture mobile phone, smart mobile phone, PDA, panel computer use.Display unit mainly refers to LCD or OLED, and LCD comprises: TN type, STN type, FE type, TFT type, mim type, IPS type, VA type etc.Can both apply when arbitrary display unit substantially in passive driving types, active-drive.
embodiment
Below, utilize embodiment etc. to illustrate the present invention, but the present invention is not limited by described example.
In following example (embodiment and comparative example), employ the glass plate (" AN100 " (trade name, Asahi Glass company manufacture) of width 100mm, length 30mm, thickness 0.2mm, linear expansion coefficient 38 × 10-7/ DEG C) be made up of alkali-free borosilicate glass as glass substrate.
In addition, as supporting substrates, employ the glass plate (width 90mm, length 30mm, thickness 0.5mm, the linear expansion coefficient 38 × 10 that are made up of alkali-free borosilicate glass equally
-7/ DEG C " AN100 " (trade name, Asahi Glass company manufacture)).
example I-11, routine I-14
form the inorganic layer containing SiC
Alkaline aqueous solution is utilized to clean a first type surface of supporting substrates and make it purifying.Then, while use SiC target material and import Ar gas to purifying face, (thickness is 10nm, and surface roughness is Ra0.4nm to form by magnetron sputtering method the inorganic layer containing SiC, below also identical), thus obtain the supporting substrates of band inorganic layer.
example I-1 ~ routine I-10
form the inorganic layer containing SiCO
Substitute Ar gas and imported Ar and O
2mist (volume ratio (Ar/O
2)=39/1, in addition, defines the inorganic layer containing SiCO with the method same with the inorganic layer formed containing SiC, thus obtains the supporting substrates of band inorganic layer.
example I-12, routine I-15
form the inorganic layer containing SiN
Substitute SiC target material and employ SiN target, in addition, to define the inorganic layer containing SiN with the same method forming the inorganic layer containing SiC, thus obtaining the supporting substrates of band inorganic layer.
example I-13, routine I-16
form the inorganic layer containing SiNO
Substitute SiC target material and employ SiN target, in addition, defining the inorganic layer containing SiNO with the method same with the inorganic layer formed containing SiCO, thus obtain the supporting substrates of band inorganic layer.
evaluate
the evaluation of stacked maintenance
Then, alkaline aqueous solution is utilized to clean the 1st first type surface of glass substrate and make it purifying.Then, successively use alkaline aqueous solution and water to clean the 1st purifying first type surface of the inorganic layer surface of the inorganic layer of the supporting substrates of the band inorganic layer of each example and the carrying out of glass substrate, thus make two faces purifying.Afterwards, glass substrate is overlapped in inorganic layer surface, and use vacuum pressing to carry out crimping and make inorganic layer and glass substrate stacked, thus obtain glass laminate.
Then, heat with the glass laminate of the condition of (a) ~ (d) shown in following table 1 to each example obtained.In addition, when not heating, in following table 1, "-" is recorded.In addition, as the atmosphere of (d) and " air " expression " air atmosphere under atmospheric pressure state " be documented in following table 1.
Further, (also comprise the situation not carrying out heating) after a heating treatment, carried out cutting to the glass laminate of each example and fracture and grind, the stacked maintenance between inorganic layer and glass substrate with following benchmark evaluation.
In addition, " cutting fractures " is that the machinery using commercially available cutting to fracture carries out.Specifically, on two faces of the glass laminate of each example, line of cut is marked in the mode of the location overlap making the glass laminate of each example, afterwards, with make supporting substrates be positioned at upside and the side of glass laminate is fixed on platform by the mode making line of cut consistent with edge of table, be broken to pressing down opposite side.
In addition, in " grinding " process, be positioned at upside to make supporting substrates and glass laminate is fixed on the cushion (Japanese: テ ー Block Le パ ッ De) of polyurethane by the mode making glass substrate be positioned at downside, use the mixed liquor of cerium oxide and water and utilize grinding pad to carry out grinding in 5 minutes.
The results are shown in following table 1.As long as result is "○" or " △ ", stacked maintenance just can be evaluated as excellent.
Zero: maintain the laminated arrangement between inorganic layer and glass substrate.
△: roughly maintain laminated arrangement, but create peel off in local.
×: laminated arrangement is out of shape, and creates on the whole and peels off.
the evaluation of fissility
Fig. 3 is the schematic cross sectional views of the evaluation method representing fissility.
First, make the 1st first type surface of the inorganic layer of inorganic layer surface and glass substrate purifying in the same manner as the evaluation of stacked maintenance.Afterwards, make supporting substrates and the glass substrate aligned in position in the longitudinal direction of the band inorganic layer of each example, and be piled up in the mode of at one end aliging at the supporting substrates of the band inorganic layer by each example and glass substrate as shown in Figure 3.In addition, because the length on the band supporting substrates of inorganic layer and the width of glass substrate is different, therefore, when by the band supporting substrates of inorganic layer and glass substrate overlapping in the mode of at one end aliging time, at the other end, as shown in Figure 3, a part for the supporting substrates of inorganic layer is with to give prominence to from glass substrate.
After overlap, make to produce closely sealed starting point between the supporting substrates of band inorganic layer and glass substrate, use vacuum pressing to crimp, thus make in whole faying surface all closely sealed, resulting in the glass laminate of each example.Afterwards, in the same manner as the evaluation of stacked maintenance, heat with the glass laminate of the condition of (a) ~ (d) shown in following table 1 to each example obtained.
Then, in air atmosphere, with 600 DEG C, heating in 1 hour is implemented to the glass laminate of each example obtained.
Then, disbonded test has been carried out.Specifically, first, two-sided tape is used to be fixed on fixed station (representing with Reference numeral 31 in figure 3) by the 2nd first type surface of the glass substrate in glass laminate.
Then, as shown in Figure 3, L font instrument (representing with Reference numeral 32 in figure 3) is made to catch on the inorganic layer surface of the supporting substrates of the band inorganic layer given prominence to from glass substrate and use machinery the supporting substrates of band inorganic layer to be mentioned with the speed of 10mm/min to the direction away from fixed station, the fissility between inorganic layer and glass substrate with following benchmark evaluation.In addition, as long as result is "○", just can be evaluated as: even if after long time treatment under the high temperature conditions, fissility is also excellent.
Zero: can peel off.
×: can not peel off.
table 1
As described in shown in table 1, a () programming rate is less than 300 DEG C/min, b () heating-up temperature is 150 DEG C ~ 600 DEG C, c () retention time is more than 0.5 minute, d () atmosphere is the air atmosphere under atmospheric pressure state, in such example (embodiment), stacked maintenance is all excellent.
On the other hand, do not carrying out heating or the condition of (a) ~ (d) departs from the example (comparative example) of described condition, stacked maintenance is poor.
In addition, according to described result, confirm: in an embodiment, the peel strength at the interface between inorganic layer and supporting substrates is greater than the peel strength at the interface between inorganic layer and glass substrate.
example II
In the present example, the glass laminate manufactured under being used in the condition (about heating condition, with reference to described table 1) of routine I-7 has made OLED.
More specifically, by the 2nd first type surface of the glass substrate of sputtering method in glass laminate forms molybdenum film, and gate electrode is defined by have employed photolithographic etching.Then, the 2nd main surface side of glass substrate of gate electrode is being provided with according to the further film forming of order of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon by plasma CVD method, then, form molybdenum film by sputtering method, and define gate insulating film, semiconductor element portion and source/drain electrode by have employed photolithographic etching.Then, form silicon nitride film by plasma CVD method further in the 2nd main surface side of glass substrate and form passivation layer, afterwards, forming indium oxide tin film by sputtering method, and define pixel electrode by have employed photolithographic etching.
Then, in the 2nd main surface side of glass substrate, further by vapour deposition method, film forming in the following order: by 4, 4 ', 4 "-three (3-methylphenylphenyl amino) triphenylamine film forming is hole injection layer, to two [(N-naphthyl)-N-phenyl] benzidine film forming is hole transporting layer, 40 volume %2 will be mixed with in oxine aluminium complex (Alq3), two [4-[N-(4-the methoxyphenyl)-N-phenyl] aminostyryl] naphthalene-1 of 6-, the material film forming of 5-dintrile (BSN-BCN) is luminescent layer, be electron transfer layer by Alq3 film forming.Then, form aluminium film by sputtering method in the 2nd main surface side of glass substrate, and define opposite electrode by have employed photolithographic etching.Then, the 2nd first type surface of glass substrate being formed with opposite electrode seals across the adhesive linkage of a ultraviolet hardening glass substrate of fitting again.Glass laminate that obtained by described step, that have organic EL tectosome is on the glass substrate equivalent to the duplexer of having electronic device component.
Then, make the sealing side vacuum suction of the glass laminate of acquisition in platform, afterwards, it is the interface between the inorganic layer of the corner positions of the stainless steel cutlery insertion glass laminate of 0.1mm and glass substrate by thickness, and the supporting substrates of band inorganic layer is separated from glass laminate, thus obtains oled panel and (be equivalent to electronic device.Hereinafter referred to as panel A).IC driver is connected to the panel A be made into, and makes IC driver drives at normal temperatures and pressures, result, in drive area, do not find that display is uneven.
example III
In the present example, the glass laminate manufactured under being used in the condition (about heating condition, with reference to described table 1) of routine I-7 has made LCD.
Preparing two glass laminate, first, by the 2nd first type surface of the glass substrate in sputtering method wherein a glass laminate forms molybdenum film, and defining gate electrode by have employed photolithographic etching.Then, the 2nd main surface side of glass substrate of gate electrode is being provided with according to the further film forming of order of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon by plasma CVD method, then, form molybdenum film by sputtering method, and define gate insulating film, semiconductor element portion and source/drain electrode by have employed photolithographic etching.Then, form silicon nitride film by plasma CVD method further in the 2nd main surface side of glass substrate and form passivation layer, afterwards, forming indium oxide tin film by sputtering method, and define pixel electrode by have employed photolithographic etching.Then, on the 2nd first type surface of glass substrate being formed with pixel electrode, be coated with polyimide resin liquid by rolling method, and form oriented layer by heat cure, then grind.The glass laminate of acquisition is called glass laminate X1.
Then, by the 2nd first type surface of the glass substrate in sputtering method wherein another glass laminate forms chromium film, and light shield layer is defined by have employed photolithographic etching.Then, be provided with the further coating chromatic photoresistance of the 2nd main surface side of glass substrate of light shield layer by squash type rubbing method, and lithographically defining colour filter with heat cure.Then, form indium oxide tin film by sputtering method further in the 2nd main surface side of glass substrate, thus define opposite electrode.Then, by squash type rubbing method coated UV line cured resin liquid on the 2nd first type surface of glass substrate being provided with opposite electrode, and lithographically column spacer is defined with heat cure.Then, on the 2nd first type surface of glass substrate being formed with column spacer, be coated with polyimide resin liquid by rolling method, and form oriented layer by heat cure, then grind.Then, in the 2nd main surface side of glass substrate, sealing resin liquid is depicted as frame-shaped by distributor method (Japanese: デ ィ ス ペ Application サ method), and by drip post liquid crystal Method by liquid crystal drop in frame, afterwards, use described glass laminate X1,2nd main surface side of the glass substrate of two glass laminate is bonded each other, and is obtained the duplexer with LCD by ultraviolet curing and heat cure.Below, the duplexer with LCD is called the duplexer X2 of panel here.
Then, the supporting substrates two being worn inorganic layer is peeled off from the duplexer X2 of panel, thus obtains the LCD B (being equivalent to electronic device) be made up of with the substrate being formed with colour filter the substrate being formed with tft array.
IC driver is connected to the LCD B be made into, and makes IC driver drives at normal temperatures and pressures, result, in drive area, do not find that display is uneven.
Understand the present invention in detail with reference to specific embodiment, but the present invention can carry out various change, amendment under the prerequisite not departing from spirit of the present invention and protection domain, this it will be apparent to those skilled in the art that.
The Japanese patent application 2013-233024 that the application applied for based on November 11st, 2013, is incorporated into its content in this description as reference.
description of reference numerals
10, glass laminate; 12, supporting substrates; 14, inorganic layer; 14a, inorganic layer surface (surface of the side contrary with supporting substrates side in inorganic layer); 16, the supporting substrates of inorganic layer is with; 18, glass substrate; 1st first type surface of 18a, glass substrate; 2nd first type surface of 18b, glass substrate; 20, component used for electronic device; 22, the duplexer of having electronic device component; 24, electronic device; 31, fixed station; 32, L font instrument.
Claims (4)
1. a manufacture method for glass laminate, obtain glass laminate by this manufacture method, this glass laminate comprises: the supporting substrates of band inorganic layer, and it has supporting substrates and is configured in the inorganic layer on described supporting substrates; And glass substrate, it is layered on described inorganic layer in the mode that can peel off, wherein,
The manufacture method of this glass laminate comprises following operation:
Lamination process, is layered in described glass substrate on described inorganic layer; And
Heating treatment step, heats after described lamination process,
Described inorganic layer contains at least a kind of material chosen from the group be made up of carborundum, silicon oxide carbide, silicon nitride and silicon oxynitride,
Described heating meets the condition of following (a) ~ following (d):
(a) programming rate: less than 300 DEG C/min;
(b) heating-up temperature: 150 DEG C ~ 600 DEG C;
(c) retention time: more than 0.5 minute; And
(d) atmosphere: the air atmosphere under the air atmosphere under atmospheric pressure state or non-active gas atmosphere or decompression state or non-active gas atmosphere or vacuum atmosphere.
2. the manufacture method of glass laminate according to claim 1, wherein,
Described (a) programming rate is less than 200 DEG C/min.
3. the manufacture method of glass laminate according to claim 1 and 2, wherein,
Described supporting substrates is glass substrate.
4. a manufacture method for electronic device, wherein, the manufacture method of this electronic device comprises following operation:
Component formation process, the surface of the described glass substrate in the glass laminate that the manufacture method by the glass laminate according to any one of claims 1 to 3 obtains forms component used for electronic device and obtains the duplexer of having electronic device component; And
Separation circuit, peels off the supporting substrates of described band inorganic layer from the duplexer of described having electronic device component and obtains the electronic device with described glass substrate and described component used for electronic device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013233024A JP6119567B2 (en) | 2013-11-11 | 2013-11-11 | Method for manufacturing glass laminate and method for manufacturing electronic device |
| JP2013-233024 | 2013-11-11 |
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| Publication Number | Publication Date |
|---|---|
| CN104626664A true CN104626664A (en) | 2015-05-20 |
| CN104626664B CN104626664B (en) | 2018-05-01 |
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| CN201410643715.9A Active CN104626664B (en) | 2013-11-11 | 2014-11-11 | The manufacture method of glass laminate and the manufacture method of electronic device |
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| JP (1) | JP6119567B2 (en) |
| KR (1) | KR20150054692A (en) |
| CN (1) | CN104626664B (en) |
| TW (1) | TWI622493B (en) |
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| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| TWI617437B (en) | 2012-12-13 | 2018-03-11 | 康寧公司 | Facilitated processing for controlling bonding between sheet and carrier |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| KR102353030B1 (en) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | Articles and methods for controlled bonding of thin sheets with carriers |
| SG11201608442TA (en) | 2014-04-09 | 2016-11-29 | Corning Inc | Device modified substrate article and methods for making |
| KR20160146712A (en) * | 2014-04-25 | 2016-12-21 | 아사히 가라스 가부시키가이샤 | Glass laminate body, and method for manufacturing electronic device |
| JP2017165589A (en) * | 2014-08-01 | 2017-09-21 | 旭硝子株式会社 | Supporter substrate with inorganic film and glass laminate, manufacturing method thereof, and manufacturing method of electronic device |
| KR102573207B1 (en) | 2015-05-19 | 2023-08-31 | 코닝 인코포레이티드 | Articles and methods for bonding sheets and carriers |
| CN117534339A (en) | 2015-06-26 | 2024-02-09 | 康宁股份有限公司 | Methods and articles comprising a sheet and a carrier |
| TW201825623A (en) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | Siloxane plasma polymers for sheet bonding |
| TWI821867B (en) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | Articles of controllably bonded sheets and methods for making same |
| WO2019036710A1 (en) | 2017-08-18 | 2019-02-21 | Corning Incorporated | Temporary bonding using polycationic polymers |
| JP6492140B1 (en) * | 2017-09-22 | 2019-03-27 | ジオマテック株式会社 | Resin substrate laminate and method of manufacturing electronic device |
| JP7431160B2 (en) | 2017-12-15 | 2024-02-14 | コーニング インコーポレイテッド | Methods for processing substrates and manufacturing articles including bonded sheets |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090309867A1 (en) * | 2008-06-17 | 2009-12-17 | Samsung Electronics Co., Ltd. | Method of driving pixels and display apparatus for performing the method |
| WO2011034034A1 (en) * | 2009-09-18 | 2011-03-24 | 日本電気硝子株式会社 | Method for producing glass film, method for processing glass film, and glass film laminate |
| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5748088B2 (en) * | 2010-03-25 | 2015-07-15 | 日本電気硝子株式会社 | Manufacturing method of glass substrate |
| JP2013184346A (en) * | 2012-03-07 | 2013-09-19 | Asahi Glass Co Ltd | Glass laminate, and method for producing electronic device |
| KR20150023312A (en) * | 2012-05-29 | 2015-03-05 | 아사히 가라스 가부시키가이샤 | Glass laminate and method for manufacturing electronic device |
| JP6593669B2 (en) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | Support glass substrate and carrier using the same |
-
2013
- 2013-11-11 JP JP2013233024A patent/JP6119567B2/en active Active
-
2014
- 2014-11-11 KR KR1020140155995A patent/KR20150054692A/en not_active Application Discontinuation
- 2014-11-11 CN CN201410643715.9A patent/CN104626664B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090309867A1 (en) * | 2008-06-17 | 2009-12-17 | Samsung Electronics Co., Ltd. | Method of driving pixels and display apparatus for performing the method |
| WO2011034034A1 (en) * | 2009-09-18 | 2011-03-24 | 日本電気硝子株式会社 | Method for producing glass film, method for processing glass film, and glass film laminate |
| CN103213371A (en) * | 2012-01-18 | 2013-07-24 | 旭硝子株式会社 | Method for manufacturing electronic device and method for manufacturing glass laminate |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI622493B (en) | 2018-05-01 |
| CN104626664B (en) | 2018-05-01 |
| TW201527088A (en) | 2015-07-16 |
| JP6119567B2 (en) | 2017-04-26 |
| KR20150054692A (en) | 2015-05-20 |
| JP2015093795A (en) | 2015-05-18 |
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