CN104708885A

CN104708885A - Manufacturing method of glass laminated body and manufacturing method of electronic device

Info

Publication number: CN104708885A
Application number: CN201410790744.8A
Authority: CN
Inventors: 日野有一; 大坪豊; 永野琢也; 宇津木洋; 宫越达三
Original assignee: Asahi Glass Co Ltd
Current assignee: AGC Inc
Priority date: 2013-12-17
Filing date: 2014-12-17
Publication date: 2015-06-17
Anticipated expiration: 2034-12-17
Also published as: CN104708885B; JP6136910B2; KR20150070977A; JP2015116698A; TW201536710A; TWI627148B

Abstract

The present invention relates to a manufacturing method of a glass laminated body and a manufacturing method of an electronic device. The glass laminated body comprises a support substrate, an organic silicon resin layer and a glass substrate in turn. The method comprises a heating process of supporting a solidification-layer-containing support substrate provided with a support substrate with a first main side and a second main side and with a solidified organic silicon composition layer configured on the first main side of the above support substrate against the side of the second main side of the above support substrate by a plurality of support pins, and heating the above solidification-layer-containing support substrate so as to form the organic silicon resin layer; a laminating process of laminating the glass substrate onto the organic silicon resin layer after the above heating process; and a surface treatment process of carrying out at least one of the group of free corona selection treatment, plasma treatment and UV ozone treatment after the laminating process or after the heating process and before the laminating process.

Description

The manufacture method of glass laminate and the manufacture method of electronic device

Technical field

The present invention relates to the manufacture method of glass laminate and the manufacture method of electronic device.

Background technology

In recent years, the devices (electronic equipment) such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED) are carrying out slimming, lightweight, and the glass substrate used in these devices is carrying out thin plate.If because thin plate causes the intensity of glass substrate not enough, then, in the manufacturing process of device, the treatability of glass substrate can reduce.

Recently, in order to tackle the problems referred to above, propose following method: the glass laminate preparing to be laminated with glass substrate and reinforcement plate, after the glass substrate of glass laminate forms the components used for electronic device such as display unit, be separated reinforcement plate (for example, see patent document 1) from glass substrate.Reinforcement plate has supporting substrate and is fixed on the silicone resin layer on this supporting substrate, and silicone resin layer and glass substrate are closely sealed in a releasable manner.Reinforcement plate is stripped at the silicone resin layer of glass laminate and the interface of glass substrate, and the reinforcement plate be separated from glass substrate can be stacked with new glass substrate, recycles as glass laminate.

In addition, for formed glass laminate, implement milled processed (patent document 2) to grind the surface of glass substrate sometimes.

Prior art document

Patent document

Patent document 1: No. 2007/018028th, International Publication

Patent document 2: No. 2013-149713, Japanese Unexamined Patent Publication

Summary of the invention

the problem that invention will solve

On the other hand, the hitherto known method having the top having the supporting substrate of film to be placed in multiple supporting pin its surface configuration to carry out heat drying.

When the method that the present inventor etc. record according to patent document 1 makes reinforcement plate, heat drying is carried out at top surface configuration being had the supporting substrate of the film forming silicone resin layer by heating to be placed in multiple supporting pin, after forming silicone resin layer, on silicone resin layer, laminated glass substrate makes glass laminate.Then, make the supporting substrate side in gained glass laminate towards the substrate-side of regulation, glass laminate is placed on the substrate of regulation, as described in patent document 1,2, has carried out the formation of the component used for electronic device on the glass substrate in glass laminate, the milled processed to glass baseplate surface.Then, want when the substrate of regulation takes off glass laminate, substrate and the supporting substrate of regulation are closely sealed, and glass laminated cognition is fixed on the substrate of regulation, fail easily to take off.Therefore, there occurs that the productivity ratio that causes because of process time long life reduces, the fabrication yield of electronic device reduces.

The present invention makes in view of above-mentioned problem, its object is to the manufacture method that glass laminate is provided, the method can be manufactured on make supporting substrate side towards various substrate be placed in can easily from the glass laminate of this strippable substrate after on various substrate.

In addition, the present invention also aims to the manufacture method providing the electronic device using glass laminate, described glass laminate is manufactured by the manufacture method of this glass laminate.

for the scheme of dealing with problems

The present inventor etc. conduct in-depth research to solve the problem, thus complete the present invention.

Namely, 1st invention of the present invention is a kind of manufacture method of glass laminate, described glass laminate has supporting substrate, silicone resin layer and glass substrate successively, the method comprises following operation: heating process, wherein, the supporting substrate possessing the supporting substrate with the first interarea and the second interarea and the band curability layer being configured in the curable silicone composition layer on the first interarea of supporting substrate is supported from the second multiple supporting pin in interarea side of supporting substrate, implement to heat to the supporting substrate of band curability layer, form silicone resin layer; Lamination process, wherein, after aforementioned heating process, laminated glass substrate on silicone resin layer; Surface treatment procedure, wherein, after lamination process or after heating process and before lamination process, at least implements at least a kind of process be selected from the group be made up of sided corona treatment, plasma treatment and UV ozone treatment to the second interarea of supporting substrate.

In the 1st invention, preferably, curable silicone composition layer is at least containing having the organic chain thiazolinyl polysiloxanes of alkenyl and having the organic hydrogen polysiloxanes with the hydrogen atom of silicon atom bonding.

In the 1st invention, preferably, heating process possesses the 1st heating process that to implement to heat at the 1st temperature successively and implements the 2nd heating process that heats at higher than the 2nd temperature of the 1st temperature.

In the 1st invention, preferably, the supporting substrate of band curability layer by the first interarea of the curable silicone composition containing curable silicone and solvent being coated on supporting substrate is formed,

1st temperature meets the initial boiling point+30 DEG C of initial boiling point-30 DEG C≤1st temperature≤solvent of solvent.

In the 1st invention, preferably, after lamination process, implement surface treatment procedure.

In the 1st invention, preferably, in surface treatment procedure, throughput direction along glass laminate arranges multiple electrode pair, described electrode pair possesses the transport path of glass laminate that obtains in the described lamination process of conveying and high-field electrode in opposite directions and earth electrode, in adjacent electrode pair one high-field electrode is configured at the side across transport path, another high-field electrode is configured at the opposite side across transport path, while along transport path conveying glass laminate, while apply high frequency voltage to high-field electrode, sided corona treatment is implemented to glass laminate.

2nd invention of the present invention is a kind of manufacture method of electronic device, the method comprises following operation: component formation process, wherein, the surface of the glass substrate of the glass laminate of the manufacture method manufacture by above-mentioned 1st invention forms component used for electronic device, obtains the duplexer of having electronic device component; Separation circuit, wherein, removes the supporting substrate with the tape tree lipid layer of silicone resin layer and supporting substrate from the duplexer of having electronic device component, obtains the electronic device with glass substrate and component used for electronic device.

the effect of invention

According to the present invention, the manufacture method of glass laminate can be provided, the method can be manufactured on make supporting substrate side towards various substrate be placed in can easily from the glass laminate of this strippable substrate after on various substrate.

In addition, according to the present invention, can also provide the manufacture method of the electronic device using glass laminate, described glass laminate is manufactured by the manufacture method of this glass laminate.

Accompanying drawing explanation

Fig. 1 is the flow chart of the manufacturing process of the 1st invention of the manufacture method that glass laminate of the present invention is shown.

(A), (B) and (C) of Fig. 2 is the schematic cross-section of the 1st embodiment that the manufacture method of glass laminate of the present invention is shown by process sequence.

Fig. 3 is the schematic diagram of the configuration status of the supporting substrate of the band curability layer illustrated in heating process.

Fig. 4 is the side view of the embodiment that corona treatment plant is shown.

Fig. 5 is the flow chart of the manufacturing process of the 2nd invention of the manufacture method that glass laminate of the present invention is shown.

(A) and (B) of Fig. 6 is the schematic cross-section of the embodiment that the manufacture method of electronic device of the present invention is shown by process sequence.

description of reference numerals

10 supporting substrates

Second interarea of 10a supporting substrate

12 curable silicone composition layers

The supporting substrate of 14 band curability layers

16 silicone resin layers

16a silicone resin layer with the surface of supporting substrate side opposite side

The supporting substrate of 18 tape tree lipid layer

20 glass substrates

First interarea of 20a glass substrate

Second interarea of 20b glass substrate

22 components used for electronic device

The duplexer of 24 having electronic device components

26 electronic devices

50 brace tables

52 supporting pins

60 corona treatment plants

62 the 1st high-field electrodes

64 the 1st earth electrodes

66 the 2nd high-field electrodes

68 the 2nd earth electrodes

70 the 1st electrode pairs

72 the 2nd electrode pairs

74 conveying rollers

76 the 1st high frequency electric sources

78 the 2nd high frequency electric sources

100 glass laminate

X glass laminate

Detailed description of the invention

Referring to accompanying drawing, the preferred embodiment of the present invention is described, but the present invention is not by the restriction of following embodiment, can impose various distortion and displacement without departing from the scope of the invention to following embodiment.

The present inventor etc. are studied for the problems referred to above, found that one of reason is after heating process or glass laminate makes the second interarea (back side) side that rear (after lamination process) organic siliconresin is attached to supporting substrate.

More specifically, when heating process, organic siliconresin or the volatilization of its feedstock portions, organic siliconresin is attached to the second interarea side of the supporting substrate supported by supporting pin.Therefore, make the supporting substrate side of glass laminate towards the substrate-side of regulation glass laminate is positioned in regulation substrate on time, because the organic siliconresin existed between the supporting substrate in the substrate and glass laminate of this regulation causes the peel strength of substrate and the supporting substrate specified to rise, both become and are difficult to peel off.Thus find, removing organic siliconresin by implementing various process to the second interarea side of supporting substrate after glass laminate makes, can solve the problem.

The manufacture method of glass laminate of the present invention possesses to be implemented the heating process of heating, the lamination process of laminated glass substrate to the supporting substrate of band curability layer and carries out surface-treated surface treatment procedure.In addition, surface treatment procedure is implemented before above-mentioned lamination process after above-mentioned lamination process or after above-mentioned heating process.Below using the former mode as the 1st mode, the mode of the latter is described as the 2nd mode.

<< the 1st mode >>

Fig. 1 is the flow chart of the manufacturing process in the 1st invention of the manufacture method that glass laminate of the present invention is shown.As shown in Figure 1, the 1st invention possesses heating process S102, lamination process S104 and surface treatment procedure S106 successively.

Below the material used in each operation and step thereof are described in detail.First, heating process S102 is described in detail.

< heating process >

Heating process S102 is following operation: supported from the second interarea (with the face that there is curable silicone composition layer side opposite side) the multiple supporting pin in side of supporting substrate by the supporting substrate possessing the supporting substrate with the first interarea and the second interarea and the band curability layer being configured in the curable silicone composition layer on the first interarea of supporting substrate, implement to heat to the supporting substrate of band curability layer, form silicone resin layer.More specifically, by implementing this operation S102 to the supporting substrate 10 that possesses in (A) of Fig. 2 with the supporting substrate 14 of the band curability layer of curable silicone composition layer 12, as shown in Fig. 2 (B), the supporting substrate 18 of the tape tree lipid layer possessing supporting substrate 10 and silicone resin layer 16 can be obtained.

Below first describe the component, the material (supporting substrate, curable silicone composition layer) that use in this operation S102 in detail, then the step of operation S102 is described in detail.

(supporting substrate)

Supporting substrate 10 has the first interarea and these 2 interareas of the second interarea, with silicone resin layer 16 described later acting in conjunction, support and strengthen glass substrate 20 described later, and prevent when manufacturing component used for electronic device in the component formation process described later (manufacturing process of component used for electronic device) that glass substrate 20 is out of shape, scratch, breakage etc.In addition, one of object of supporting substrate 10 is used also to be, during the glass substrate using Thickness Ratio in the past thin, by making the glass laminate identical with thickness of glass substrate in the past, in component formation process, also can use the manufacturing technology of the glass substrate being suitable for thickness in the past, manufacturing equipment.

As supporting substrate 10, metallic plate, the ceramic wafers etc. such as such as glass plate, plastic plate, SUS plate can be used.When component formation process is with heat treatment, supporting substrate 10 is preferably formed by the material that the difference of the linear expansion coefficient with glass substrate 20 is little, is more preferably formed by the material identical with glass substrate 20.That is, supporting substrate 10 is preferably glass plate.Supporting substrate 10 is particularly preferably the glass plate formed by the glass material identical with glass substrate 20.

The thickness of supporting substrate 10 can be thicker than glass substrate 20, also can be thinner than it.Preferably, the thickness of supporting substrate 10 is selected according to the thickness of glass substrate 20, the thickness of resin bed 16 and the thickness of glass laminate.Such as, current component formation process is with the patten's design processed the substrate of thickness 0.5mm, when the thickness of glass substrate 20 and the thickness sum of resin bed 16 are 0.1mm, the thickness of supporting substrate 10 is set as 0.4mm.The thickness of supporting substrate 10 is preferably 0.2 ~ 5.0mm in normal circumstances.

When supporting substrate 10 is glass plate, from the reason such as easy to operate, not easily broken, the thickness of glass plate is preferably more than 0.08mm.In addition, for expecting to have appropriateness flexure and can not the reason of cracked such rigidity when peeling off after being formed at component used for electronic device, the thickness of glass plate is preferably below 1.0mm.

Supporting substrate 10 is preferably 500 × 10 with the difference of the average coefficient of linear expansion of glass substrate 20 at 25 ~ 300 DEG C (hereinafter referred to as " average coefficient of linear expansion ") ^-7/ DEG C below, be more preferably 300 × 10 ^-7/ DEG C below, more preferably 200 × 10 ^-7/ DEG C below.When difference is excessive, when the heating in component formation process cools, likely the violent warpage of glass laminate or glass substrate 20 are peeled off with the supporting substrate 18 of tape tree lipid layer described later.When the material of glass substrate 20 is identical with the material of supporting substrate 10, the generation of this problem can be suppressed.

(curable silicone composition layer)

Curable silicone composition layer is the layer that can form the composition of silicone resin layer in this operation S102.

Containing the curable silicone being solidified to form organic siliconresin in curable silicone composition layer.This curable silicone can be divided into condensation reaction type organosilicon, addition reaction-type organosilicon, ultraviolet hardening organosilicon and electron ray curing type organosilicon according to its curing mechanism, and these all can use.Preferred addition reaction-type organosilicon in the middle of them.This be due to curing reaction easily carry out, define silicone resin layer time the degree of easy fissility good, heat resistance is also high.

Addition reaction-type organosilicon is containing host and crosslinking agent, the composition of curability that solidifies under the existence of the catalyst such as platinum group catalyst.The organosilyl solidification of addition reaction-type can be promoted because of heating.Host in addition reaction-type organosilicon preferably has and the organopolysiloxane of the alkenyl of silicon atom bonding (vinyl etc.) (i.e. organic chain thiazolinyl polysiloxanes.Wherein preferred straight chain), alkenyls etc. become crosslinking points.Crosslinking agent in addition reaction-type organosilicon preferably has and the organopolysiloxane of the hydrogen atom of silicon atom bonding (hydrosilyl) (i.e. organic hydrogen polysiloxanes.Wherein preferred straight chain), hydrosilyl etc. become crosslinking points.

Addition reaction-type organosilicon is carried out addition reaction by the crosslinking points of host and crosslinking agent and is solidified.In addition, more excellent from the viewpoint of the heat resistance brought by cross-linked structure, preferred organic hydrogen polysiloxanes be 0.5 ~ 2 with the hydrogen atom of silicon atom bonding relative to the mol ratio of the alkenyl of organic chain thiazolinyl polysiloxanes.

When the curable silicone contained in curable silicone composition layer is addition reaction-type organosilicon, in curable silicone composition layer, catalyst (especially platinum group metal series catalysts), reaction suppressor can also be contained.

Platinum group metal series catalysts (hydrosilylation platinum metal catalysts) is the catalyst for making the hydrosilylation reactions of the alkenyl in above-mentioned organic chain thiazolinyl polysiloxanes and the hydrogen atom in above-mentioned organic hydrogen polysiloxanes carry out, be promoted.As platinum group metal series catalysts, the catalyst of platinum group, palladium system, rhodium system etc. can be listed, from the viewpoint of economy, reactive, particularly preferably use platinum group catalyst.

The so-called working life of the pot life of above-mentioned catalyst (especially platinum group metal series catalysts) catalyst activity at normal temperatures, prolongation curable silicone composition reaction suppressor (hydrosilylation reaction suppressor) suppress extend agent (also referred to as delayed-action activator).As reaction suppressor, include, for example out various organonitrogen compound, organic phosphorus compound, acetylene compound, oxime compound, organochlorine compound etc.Especially, acetylene compound (the silane compound of such as acetylene alcohols and acetylene alcohol) is suitably.

The method that supporting substrate is formed curable silicone composition is not particularly limited, known method can be adopted.Include, for example out the method be coated on by the curable silicone composition containing above-mentioned curable silicone on supporting substrate.In addition, the method be coated with is not particularly limited, known method can be adopted.Such as, as coating process, can list: spraying process, mould are coated with method, spin-coating method, dip coating, rolling method, stick coating method, silk screen print method, gravure coating process etc.Suitably can select from such method according to the kind of curable silicone composition.

Solvent can be contained as required in curable silicone composition.Solvent preferably can easily dissolve various composition and the solvent removed that can easily volatilize.Specifically, butyl acetate, heptane, 2-HEPTANONE, 1-methoxy-2-propanol acetic acid esters, toluene, dimethylbenzene, THF, chloroform etc. can such as be exemplified.Wherein, preferred saturated hydrocarbons, can use in fact by the one kind or two or more various saturated hydrocarbon solvent formed in various saturated hydrocarbons (straight chain saturation alkane, branched-chain saturated hydrocarbon, ester ring type saturated hydrocarbons).Include, for example out: Isopar G (Exxon Mobil Corporation manufactures), Isopar L (Exxon MobilCorporation manufactures), Isopar H (Exxon Mobil Corporation manufactures), Isopar M (ExxonMobil Corporation manufactures), Norpar 13 (Exxon Mobil Corporation manufactures), Norpar15 (Exxon Mobil Corporation manufactures), Exxsol D40 (Exxon Mobil Corporation manufactures), Exxsol D60 (Exxon Mobil Corporation manufactures), Exxsol D80 (Exxon MobilCorporation manufactures), Neochiozol (centralized one-tenth Co., Ltd. manufactures), IP Solvent 2028 (Idemitsu Kosen Co., Ltd.'s manufacture).

Wherein, as described later, from when implementing operation S102 with 2 stages during the 1st heating period solvent hold volatile in, preferably use initial boiling point (under atmospheric pressure) to be the solvent of less than 210 DEG C.

In addition, the thickness of curable silicone composition layer is not particularly limited, suitably can adjusts the silicone resin layer obtaining there is suitable depth described later.

(step of operation)

In this operation S102, the supporting substrate of band curability layer is supported from the second multiple supporting pin in interarea side of supporting substrate, implements to heat.That is, while the supporting substrate supporting pin of band curability layer is supported, heat.More specifically, as shown in Figure 3, the supporting substrate 14 of the upper configure band curability layer in the front end (top) of multiple supporting pins 52 of separate configuration on brace table 50, implements to heat to the supporting substrate 14 of band curability layer in this condition.In addition, the second interarea 10a of the supporting substrate 10 in the supporting substrate 14 of supporting pin 52 support belt curability layer as illustrated in fig. 3.

Although only illustrate 3 supporting pins 52 in figure 3, its quantity is not particularly limited, also can be more than 10.In addition, the allocation position of supporting pin 52 is not particularly limited, can configures across the interval of regulation, also can irregularly configure.And then, the shape of supporting pin 52 is not particularly limited, can be cylindric, polygon-shaped etc. in arbitrary shape.

In addition, as shown in Figure 3, because the part of supporting pin 52 with the second interarea 10a side of supporting substrate 10 contacts, therefore there is in the second interarea 10a side of supporting substrate 10 region do not contacted with supporting pin 52.

About the method implementing to heat to the supporting substrate of band curability layer, as long as can carry out heating just being not particularly limited under the state of the supporting substrate with above-mentioned supporting pin support belt curability layer, such as, can be used in heating clamber the known heat treatment apparatus such as the baking oven being provided with supporting pin.More specifically, the method (carrying out the method heated in the heat treatment apparatus that the top of the curable silicone composition layer such as in the supporting substrate being configured at the band curability layer on supporting pin is provided with heating plate) using and possess the heat treatment apparatus of heating plate can be listed.

The heating condition of curable silicone composition layer heat cure is made suitably to select optimum condition according to the kind of used curable silicone.Wherein, from the viewpoint of the curing rate of curable silicone and the heat resistance etc. of the silicone resin layer formed, under 150 ~ 300 DEG C (being preferably 180 ~ 250 DEG C), preferably carrying out 10 ~ 120 minutes (being preferably 30 ~ 60 minutes) heating.

As the suitable way of this operation S102, preferably under different temperature conditions, implement the mode of heating with 2 stages.That is, more preferably possess operation that to implement to heat at the 1st temperature and implement the operation that heats at higher than the 2nd temperature of the 1st temperature.By implementing to heat with 2 stages, the surperficial planar of the silicone resin layer 16 formed is more excellent, improves further with the adaptation of glass substrate 20 described later.In addition, when implementing to heat with 2 stages, the 1st heating process and the 2nd heating process can be implemented with respective heat treatment apparatus.

In addition, when supporting substrate with curability layer supporting substrate is formed by being coated on by the curable silicone composition containing curable silicone and solvent, surface that is more excellent from the viewpoint of the removal of solvent, curable silicone composition layer flattens smooth and can curable silicone be suppressed further to decompose, and the 1st temperature is preferably in the scope of the initial boiling point+30 DEG C of initial boiling point-30 DEG C ~ solvent of solvent.In other words, the 1st temperature preferably meets following relational expression.

The initial boiling point+30 DEG C of initial boiling point-30 DEG C≤1st temperature≤solvent of solvent

Wherein, the initial boiling point of solvent refers to the value recorded according to JIS K0066 (1992).The content of JIS K0066 (1992) is incorporated to herein as reference.

The difference of above-mentioned 1st temperature and the 2nd temperature is not particularly limited, is preferably more than 10 DEG C, is more preferably more than 30 DEG C.The upper limit is not particularly limited, is usually preferably less than 100 DEG C, is more preferably less than 70 DEG C.

In addition, the 1st temperature is preferably less than 210 DEG C.That is, preferably possess the 1st heating process that to implement to heat below 210 DEG C and implement the 2nd heating process that heats at more than 210 DEG C.If be less than 210 DEG C, then can suppress the bumping of solvent, the volatilization of organic siliconresin further, make the surperficial planar of formed silicone resin layer 16 more excellent.Below above-mentioned 1st heating process under said temperature condition and above-mentioned 2nd heating process are described in detail.

1st heating process is so-called prebake operation, mainly removes the volatile ingredients such as the solvent remained in curable silicone composition layer 12 and prevents solvent from the 2nd heating process described later, bumping occurring.The temperature conditions of the 1st heating process is preferably less than 210 DEG C, more excellent from the viewpoint of the surperficial planar of silicone resin layer 16, is more preferably 150 ~ 210 DEG C.Heat time suitably can select optimum condition according to used material, from the viewpoint of the removal of productivity ratio and solvent, be preferably 1 ~ 5 minute, be more preferably 2 ~ 3 minutes.

2nd heating process be so-called after cure operation, the main solidification promoting curable silicone composition layer 12, forms silicone resin layer 16.The temperature conditions of the 2nd heating process preferably greater than 210 DEG C, from the viewpoint of the removal of solvents of curable silicone composition layer 12 and curing reaction more excellent, more preferably above 210 DEG C and be less than 250 DEG C.Heat time suitably can select optimum condition according to used material, from the viewpoint of the removal of productivity ratio and solvent, be preferably 10 ~ 120 minutes, be more preferably 30 ~ 60 minutes.

The silicone resin layer 16 formed through this operation S102 passes through on supporting substrate 10, implement the curing reaction of curable silicone composition layer 12 and be fixed on the one side of supporting substrate 10, and closely sealed with glass substrate 20 described later in a releasable manner.Silicone resin layer 16 prevents the position of glass substrate 20 from departing from until carry out the operation be separated with supporting substrate 10 by glass substrate 20, and easily peeled off from glass substrate 20 by lock out operation, prevent glass substrate 20 grade damaged because of lock out operation.In addition, silicone resin layer 16 is fixed on supporting substrate 10, and in lock out operation, silicone resin layer 16 and supporting substrate 10 are not peeled off, and can be obtained the supporting substrate 18 of tape tree lipid layer by lock out operation.

The surface contacted with glass substrate 20 of silicone resin layer 16 is closely sealed with the first interarea of glass substrate 20 in a releasable manner.In the present invention, the character that can easily peel off on this silicone resin layer 16 surface is called easy fissility (fissility).

In the present invention, above-mentioned fixing and strippablely closely sealedly to there are differences in peel strength (namely peeling off required stress), fixedly refer to that peel strength is larger compared with closely sealed.In addition, strippablely closely sealedly refer to peelable, also mean simultaneously and can peel off in the mode of the stripping in the face be not fixed.Specifically, in glass laminate of the present invention, when carrying out the operation be separated with supporting substrate 10 by glass substrate 20, refer in the stripping of closely sealed face, do not peel off in fixing face.Therefore, in glass laminate, when carrying out the operation be separated with supporting substrate 10 by glass substrate 20, glass laminate is separated into both supporting substrates 18 of glass substrate 20 and tape tree lipid layer.

That is, be higher compared with the adhesion of the first interarea of adhesion and silicone resin layer 16 pairs of glass substrates 20 of the first interarea of silicone resin layer 16 pairs of supporting substrates 10.

The thickness of silicone resin layer 16 is not particularly limited, is preferably 2 ~ 100 μm, is more preferably 3 ~ 50 μm, more preferably 7 ~ 20 μm.When the thickness of silicone resin layer 16 is this scope, even if accompany bubble, foreign matter between silicone resin layer 16 and glass substrate 20, also can suppress the generation of the deformation defect of glass substrate 20.In addition, when the thickness of silicone resin layer 16 is blocked up, it forms needs and expends time in and material, and therefore uneconomical, heat resistance can reduce sometimes.In addition, when the thickness of silicone resin layer 16 is crossed thin, silicone resin layer 16 can reduce with the adaptation of glass substrate 20 sometimes.

< lamination process >

Lamination process S104 is following operation: laminated glass substrate 20 on the surface of the silicone resin layer 16 obtained in above-mentioned operation S102, is possessed the glass laminate 100 of supporting substrate 10, silicone resin layer 16 and glass substrate 20 successively.More specifically, as shown in (C) of Fig. 2, using silicone resin layer 16 with the surperficial 16a of supporting substrate 10 side opposite side and there is the first interarea 20a and the second interarea 20b the first interarea 20a of glass substrate 20 as lamination surface, by silicone resin layer 16 and glass substrate 20 stacked, obtain glass laminate 100.In addition, as described later, gained glass laminate 100 implements the process front glass duplexer before surface treatment procedure S106 described later, infer glass laminate 100 supporting substrate 10 attached to organic siliconresin or its raw material with the surface (the second interarea 10a of supporting substrate 10) of silicone resin layer 16 side opposite side.

For used glass substrate 20, be described in detail later.

The method be layered on silicone resin layer 16 by glass substrate 20 is not particularly limited, known method can be adopted.

Include, for example out the method for overlapping glass substrate 20 on the surface of silicone resin layer 16 under atmospheric pressure environment.In addition, also can use roller as required and on the surface of silicone resin layer 16 after overlapping glass substrate 20, suppress glass substrate 20 is crimped with silicone resin layer 16.By the crimping based on roller or compacting, the bubble be mixed between silicone resin layer 16 and glass substrate 20 can be removed relatively easily, therefore preferably.

When being crimped with glass substrate 20 by silicone resin layer 16 by vacuum layer platen press, Vacuum Pressure method for making, being mixed into of bubble can be suppressed, guarantee good closely sealed, therefore more preferably.By crimping under vacuo, also tool has the following advantages, even if that is, when remaining micro-bubble, also can not cause air bubble growth because of heating, is not easy the deformation defect causing glass substrate 20.

When laminated glass substrate 20, preferably fully clean the surface of the glass substrate 20 contacted with silicone resin layer 16, carry out stacked under the environment that cleanliness factor is high.Cleanliness factor is higher, and the flatness of glass substrate 20 is better, therefore preferably.

In addition, after laminated glass substrate 20, pre-anneal treatment (heating) can be carried out as required.By carrying out this pre-anneal treatment, the adaptation of stacked glass substrate 20 pairs of silicone resin layers 16 improve, can become suitable peel strength, the position being less likely to occur component used for electronic device when component formation process described later is departed from, and the productivity ratio of electronic device improves.

The condition of pre-anneal treatment suitably can select optimum condition according to the kind of used silicone resin layer 16, from the viewpoint of the peel strength made between glass substrate 20 and silicone resin layer 16 more suitably, carry out more than 5 minutes (being preferably 5 ~ 30 minutes) at the temperature preferably (being preferably 300 ~ 400 DEG C) more than 300 DEG C to heat.

(glass substrate)

First interarea 20a of glass substrate 20 contacts with silicone resin layer 16, with the second interarea 20b of silicone resin layer 16 side opposite side on component used for electronic device is set.

The kind of glass substrate 20 can be conventional, include, for example out the glass substrate etc. of the such display unit of LCD, OLED.The chemical proofing of glass substrate 20, resistance to excellent moisture permeability, and percent thermal shrinkage is low.As the index of percent thermal shrinkage, the linear expansion coefficient of regulation in JIS R 3102 (nineteen ninety-five amendment) can be used.The content of JIS R 3102 (nineteen ninety-five amendment) is incorporated to herein as a reference.

When the linear expansion coefficient of glass substrate 20 is large, because component formation process described later is many with heating, therefore easily produce various rough sledding.Such as, when glass substrate 20 is formed thin film transistor (TFT) (TFT), if the glass substrate 20 defining TFT is under heating cooled, then exist and make the skew of the position of TFT become excessive anxiety due to the thermal contraction of glass substrate 20.

Glass substrate 20 can by being shaped to frit melting tabular by melten glass and obtaining.This forming method can be conventional, such as, draws method (slotdown draw process), Fourcault's method (fourcault process), Lu Baifa (Lubbers process) etc. under can using float glass process, fusion method, discharge orifice.In addition, especially for the glass substrate 20 that thickness is thin, can utilize and the glass heats being temporarily shaped to tabular be carried out extending to plastic temperature and by means such as stretchings and thinning method (horizontal sheet process) is shaping and obtain.

Be not particularly limited the kind of the glass of glass substrate 20, preferred alkali-free pyrex, pyrex, soda-lime glass, vagcor, other take silica as the oxide based glass of main component.As oxide based glass, the content being preferably based on the silica that oxide converts is the glass of 40 ~ 90 quality %.

As the glass of glass substrate 20, the applicable kind of component used for electronic device, the glass of its manufacturing process can be adopted.Such as, the glass substrate of liquid crystal panel easily has an impact to liquid crystal due to the stripping of alkali metal component, is therefore formed (wherein, usually containing alkaline earth metal component) by the glass (alkali-free glass) of alkali-free metal ingredient in fact.So, the glass of glass substrate 20 suitably can be selected according to the kind of applied device and manufacturing process thereof.

From slimming and/or the light-weighted angle of glass substrate 20, the thickness of glass substrate 20 is preferably below 0.3mm, is more preferably below 0.15mm, more preferably below 0.10mm.When thickness is below 0.3mm, the flexibility that glass substrate 20 is good can be given.When thickness is below 0.15mm, glass substrate 20 can be coiled into drum.

In addition, the reasons such as the process that is easy to manufacture, glass substrate 20 for glass substrate 20 is easy, the thickness of glass substrate 20 is preferably more than 0.03mm.

In addition, glass substrate 20 can be formed by more than 2 layers, and in this situation, the material forming each layer can be same material, also can be not same material.In addition, in this situation, " thickness of glass substrate 20 " refers to the gross thickness of all layers.

(glass laminate)

Glass laminate 100 is the duplexers having supporting substrate 10, glass substrate 20 and be present in the silicone resin layer 16 between them.The face of the side of silicone resin layer 16 contacts with the first interarea of supporting substrate 10, and the face of opposite side contacts with the first interarea 20a of glass substrate 20.

Till this glass laminate 100 uses component formation process described later.That is, till this glass laminate 100 uses and form the components used for electronic device such as liquid crystal indicator on the second interarea 20b of its glass substrate 20.Then, the glass laminate being formed with component used for electronic device is separated into supporting substrate 18 and the electronic device of tape tree lipid layer, and the supporting substrate 18 of tape tree lipid layer can not become the component part of electronic device.Can on the supporting substrate 18 of tape tree lipid layer stacked new glass substrate 20, recycle as new glass laminate 100.

Supporting substrate 10 has peel strength (x) with the interface of silicone resin layer 16, when the stress of the direction of delaminate of peel strength (x) is applied above to the interface of supporting substrate 10 and silicone resin layer 16, peel off at the interface of supporting substrate 10 with silicone resin layer 16.Silicone resin layer 16 has peel strength (y) with the interface of glass substrate 20, when the stress of the direction of delaminate of peel strength (y) is applied above to the interface of silicone resin layer 16 and glass substrate 20, peel off at the interface of silicone resin layer 16 with glass substrate 20.

As mentioned above, in glass laminate 100 (also referring to the duplexer of having electronic device component described later), above-mentioned peel strength (x) is greater than (higher than) above-mentioned peel strength (y).Therefore, when glass laminate 100 being applied to the stress in the direction of supporting substrate 10 and glass substrate 20 being peeled off, glass laminate 100, at the interface peel of silicone resin layer 16 with glass substrate 20, is separated into the supporting substrate 18 of glass substrate 20 and tape tree lipid layer.

That is, silicone resin layer 16 is fixed on the supporting substrate 18 supporting substrate 10 being formed tape tree lipid layer, and glass substrate 20 is closely sealed on silicone resin layer 16 in a releasable manner.

Peel strength (x) is preferably abundant higher than peel strength (y).Improve peel strength (x) to refer to, improve silicone resin layer 16 pairs of supporting substrates 10 adhesive force, and adhesive force relatively high compared with the adhesive force to glass substrate 20 can be maintained after a heating treatment.

The raising of the adhesive force of silicone resin layer 16 pairs of supporting substrates 10 is described above, is cross-linked solidify to form silicone resin layer 16 and realize by making curable silicone composition layer 12 on supporting substrate 10.By bonding force during crosslinking curing, the silicone resin layer 16 be combined with supporting substrate 10 with high-bond can be formed.

On the other hand, the adhesion produced when the adhesion of the glass substrate 20 of curable silicone composition layer 12 pairs of solidfied materials is usually less than above-mentioned crosslinking curing.

Glass laminate 100 can be used in various uses, include, for example out manufacture display unit panel described later, purposes etc. that PV, thin-film secondary battery, surface are formed with the electronic units such as the semiconductor crystal wafer of circuit.It should be noted that, in this purposes, glass laminate more than 100 is exposed to (such as more than 360 DEG C) under (such as more than 1 hour) hot conditions.

Herein, display unit panel comprises LCD, OLED, Electronic Paper, Plasmia indicating panel, field emission panels, quantum dot LED panel, MEMS (Micro Electro Mechanical Systems, microelectromechanical systems) shutter face plate etc.

< surface treatment procedure >

Surface treatment procedure S106 at least implements to be selected from least a kind of operation processed in the group be made up of sided corona treatment, plasma treatment and UV ozone treatment to second interarea (with the face that there is silicone resin layer side opposite side) of supporting substrate.In the 1st invention, be intended to implement above-mentioned process to the second interarea of the supporting substrate in the glass laminate of above-mentioned formation.More specifically, above-mentioned process is implemented to the second interarea 10a of the supporting substrate 10 of (C) of Fig. 2.By implementing this operation S106, to volatilize and the organic siliconresin, its material composition etc. that are attached to the second interarea 10a of supporting substrate 10 are removed when above-mentioned heating process S102, the second interarea 10a of supporting substrate 10 is purifying.That is, by implementing above-mentioned process to the glass laminate obtained in above-mentioned lamination process S104, the glass laminate processed can be obtained.In addition, as described later, in this operation S106, above-mentioned process can be implemented in the lump to the exposing surface of the glass substrate in the second interarea of the supporting substrate in glass laminate and glass laminate.

As the sided corona treatment implemented in this operation S106 (corona cleaning), known sided corona treatment can be implemented.In addition, sided corona treatment is referred to and is irradiated by corona discharge and make plastic sheeting, paper and metal forming etc. process the process for treating surface of the surface modification of base material.When applying the high frequency, the high voltage that are sent by high intensity light source between high-field electrode and earth electrode, produce corona discharge.

The method of sided corona treatment is not particularly limited, such as the preferred conveying roller at support glass duplexer and and its electrode arranged in opposite directions between apply high voltage and make it produce corona discharge, make glass laminate move betwixt successively and carry out surface-treated method.As concrete sided corona treatment device, can list and be made up of high frequency electric source (high-frequency generator), high-tension transformer and sparking electrode, before and after it, be assembled with the device of the conveyer of conveying glass laminate.Be not particularly limited the frequency of high-frequency generator, be such as preferably 0.1 ~ 100kHz, preferred peak power output is the high-frequency generator of about 0.5 ~ 50kW.The transporting velocity (processing speed) of glass laminate is not particularly limited, is preferably 1 ~ 10m/min.

In addition, when implementing surface treatment procedure S106 after lamination process S104, preferably use the following corona treatment plant illustrated.

Fig. 4 is the side view of the embodiment that corona treatment plant is shown.Corona treatment plant 60 at least possesses the 1st high-field electrode 62, the 1st earth electrode 64, the 2nd high-field electrode 66 and the 2nd earth electrode 68.1st high-field electrode 62 and the 1st earth electrode 64 configure in opposite directions across predetermined distance and form the 1st electrode pair 70, between these the 1st high-field electrode 62 and the 1st earth electrodes 64, form discharge space.In addition, the 2nd high-field electrode 66 and the 2nd earth electrode 68 configure in opposite directions across predetermined distance and form the 2nd electrode pair 72, between these the 2nd high-field electrode 66 and the 2nd earth electrodes 68, form discharge space.1st electrode pair 70 and the 2nd electrode pair 72 as shown in Figure 4, the adjacent configuration in the direction successively with the glass laminate X of supporting substrate, silicone resin layer and glass substrate obtained in conveying lamination process S104.And then as shown in Figure 4, glass laminate X is carried by conveying roller 74, move between the 1st high-field electrode 62 and the 1st earth electrode 64 and between the 2nd high-field electrode 66 and the 2nd earth electrode 68.

In addition, the 1st high-field electrode 62 is connected with the 1st high frequency electric source 76 and is applied in high frequency voltage.In addition, the 2nd high-field electrode 66 is connected with the 2nd high frequency electric source 78 and is applied in high frequency voltage.It should be noted that, in the diagram, employ both the 1st high frequency electric source 76 and the 2nd high frequency electric source 78, but be not limited to which, the 1st high frequency electric source 76 and the 2nd high frequency electric source 78 can use (sharing) same power supply.

And then the 1st high-field electrode 62 and the 2nd high-field electrode 66 are configured in upside (side) and downside (opposite side) in the path (transport path) of the glass laminate X conveying in Fig. 4 respectively.In other words, the 1st high-field electrode 62 and the 2nd high-field electrode 66 interconnected along the throughput direction of glass laminate X.

When using conveying roller 74 to carry glass laminate X to above-mentioned corona treatment plant 60, because the 1st high-field electrode 62 and the 2nd high-field electrode 66 are configured in side and the opposite side of the transport path of glass laminate X respectively, therefore, it is possible to effectively carry out sided corona treatment to the two sides of carried glass laminate X.That is, sided corona treatment can be implemented to the exposing surface (with the face of silicone resin layer side opposite side) of the second interarea of the supporting substrate in glass laminate X (with the face of silicone resin layer side opposite side) and glass substrate.

In addition, the optimum range of the condition of the condition of high frequency electric source, the transporting velocity (processing speed) of glass laminate X is described above.

In addition, in the diagram, the 1st high-field electrode 62 configures upside in the accompanying drawings, the 2nd high-field electrode 66 configures downside in the accompanying drawings, but is not limited to which, and its position relationship can be put upside down.

In addition, when only implementing strong sided corona treatment to the one-sided face (the second interarea of supporting substrate) of glass laminate X, the 1st high-field electrode 62 can be configured together with the 2nd high-field electrode 66 upside in the accompanying drawings or downside.

And then, in the diagram, describe and comprise the 1st electrode pair 70 and the corona treatment plant both the 2nd electrode pair 72, but the quantity of electrode pair is not limited to which.

As the 1st high-field electrode 62, the 2nd high-field electrode 66, the 1st earth electrode 64 and the 2nd earth electrode 68, the electrode that can use metal electrode or be coated to by dielectric, but in order to the stable electric discharge carried out for sided corona treatment, at least one in the 1st high-field electrode 62 preferably configured in opposite directions and at least one of the 1st earth electrode 64 and the 2nd high-field electrode 66 configured in opposite directions and the 2nd earth electrode 68 is coated to by dielectric.More preferably covered by dielectric both the 1st high-field electrode 62 and the 1st earth electrode 64 and both the 2nd high-field electrode 66 and the 2nd earth electrode 68.Thereby, it is possible to expand the interval between high-field electrode and earth electrode, become easily stable conveying glass laminate X.

In addition, as the electrode be coated to by dielectric (dielectric covering electrodes), be preferably coated with the ceramic electrode of pottery on the surface of the core of the electric conductivity of the metal such as stainless steel, aluminium and so on.Generally, when sided corona treatment carried out to resin film etc., as dielectric covering electrodes, be used in rubber electrode metal core being coated with elastomeric material, but due to weight and rigidity relation and diameter is thick, therefore corona treatment plant 60 maximizes, and produces space between conveying roller, breaks down sometimes in the conveying of thin glass laminate X.Ceramic electrode is due to light weight and rigidity is high, and therefore diameter is less than rubber electrode, is thus not easy to produce this problem.

In addition, rubber electrode easily because of electric discharge rubber tunicle impaired, be therefore difficult to use fixing for electrode.Therefore, generally rotating mechanism is set on rubber electrode, uses while make it rotate limit, there is device complexity and the problem maximized.Even if ceramic electrode discharges repeatedly in same area be also not easy damage, therefore without the need to arranging this rotating mechanism.

Plasma treatment (plasma clean) comprises atmospheric pressure (or normal pressure) plasma treatment and low-pressure low-temperature plasma treatment.

In atmospheric pressure plasma jet treatment, to gas exerts discharge energy, ionize at ambient pressure, make it produce plasma.As its feature, can list: due to be atmospheric processes and without the need to forming vacuum, equipment is simple and productivity ratio is also high.As mode, mainly contain rare gas class atmospheric plasma and control to apply the pulse mode atmospheric plasma that voltage carries out glow discharge, can be used any one.

In low-pressure low-temperature plasma treatment, in the apparatus for low-temperature plasma treatment making glass laminate pass through to reduce pressure, under the state making the atmosphere for inorganic gas in device, being 0.001 ~ 10Torr keeping pressure, being preferably 0.01 ~ 1Torr to electrode between apply the electric power of frequency 50Hz ~ 13.6MHz.Carry out glow discharge by the electric power applying 0.1 ~ 50kW and produce the low temperature plasma of inorganic gas.Glass laminate is set wherein, supporting substrate is processed.When processing continuously glass laminate, glass laminate is moved successively, effects on surface carries out plasma treatment on one side.As this inorganic gas, the rare gas such as helium, neon, argon gas and oxygen, nitrogen, air, carbonic acid gas, ammonia etc. can be used.These gases are not limited to a kind, can be mixtures of more than two kinds.

Atmospheric pressure plasma jet treatment and low-pressure low-temperature plasma treatment any one in, plasma treatment time is all preferably 0.1 ~ 1000 second, is more preferably 1 ~ 100 second.

UV ozone treatment refers to that irradiating UV (ultraviolet) makes the oxygen conversion in air become ozone, the process making plane of illumination purifying by this ozone and ultraviolet.

Oxygen conversion is made to become ozone to be just not particularly limited as long as UV light source irradiates by UV.As UV light source, low pressure mercury lamp can be listed.Low pressure mercury lamp produces the UV light of 185nm and 254nm, and 185nm line can make oxygen conversion become ozone.Illumination during irradiation is different according to the light source used, and generally uses tens ~ hundreds of mW/cm ²light source.In addition, by light harvesting, diffusion, illumination can be changed.Irradiation time is different from the kind of the illumination of lamp and untreated layer, is generally 1 minute ~ 24 hours.Treatment temperature is generally 10 ~ 200 DEG C.In addition, the exposure (i.e. amount of ultraviolet) of UV is generally 1mJ/cm ²above, 1 ~ 100000mJ/cm is preferably ², be more preferably 10 ~ 100000mJ/cm ².

By implementing above-mentioned operation S106, the attachment being attached to the second interarea 10a side of supporting substrate 10 is removed.

The difference (water contact angle after water contact angle-process before treatment) of the water contact angle of the second interarea 10a of the supporting substrate 10 before and after the process of above-mentioned operation S106 is preferably more than 30 degree, is more preferably more than 50 degree.The upper limit is not particularly limited, is generally less than 70 degree.

<< the 2nd mode >>

Fig. 5 is the flow chart of the manufacturing process in the 2nd mode of the manufacture method that glass laminate of the present invention is shown.As shown in Figure 5, the 2nd mode possesses heating process S102, surface treatment procedure S106 and lamination process S104 successively.

Compared with above-mentioned 1st mode, except the different this point of enforcement order of surface treatment procedure S106, the method for its process is all identical with each operation of above-mentioned 1st mode.More specifically, in the 2nd mode, the supporting substrate of fabricated ribbon resin bed in heating process S102, then, above-mentioned surface treatment (such as sided corona treatment) is implemented to the second interarea side of the supporting substrate in the supporting substrate of this tape tree lipid layer, then, laminated glass substrate on the silicone resin layer in the supporting substrate of tape tree lipid layer, obtains glass laminate.Present embodiment also can obtain desired glass laminate.

It should be noted that, if more above-mentioned 1st mode and the 2nd mode, be then preferably the 1st mode.When the 1st mode, due to laminated glass substrate after formation silicone resin layer, before surface treatment procedure S106, therefore impurity is not easy to be attached on silicone resin layer, and the adaptation of glass substrate is more excellent.

The glass laminate obtained in above-mentioned 1st mode and the 2nd mode is used to manufacture electronic device (comprising the glass substrate of the band member of glass substrate and component used for electronic device).In addition, as required milled processed is implemented to the glass substrate of glass laminate.

Below the step of these grinding steps and electronic device manufacturing process (component formation process and separation circuit) is described in detail.

< grinding step >

Grinding step is the operation of grinding the second interarea 20b of the glass substrate 20 in gained glass laminate 100.By arranging this operation, minute asperities and the flaw of the second interarea 20b of glass substrate 20 can be removed, the flatness in the face that will form component used for electronic device can be improved.Therefore, it is possible to improve the reliability as the electronic device of product.This effect is significant for the glass substrate that the thickness used in the present invention is below 0.3mm.This is because the glass substrate of below thickness 0.3mm is difficult to grind separately, is difficult to grinding in advance before making glass laminate 100.

The method of grinding is not particularly limited, known method can be adopted, mechanicalness can be used to grind (physical grinding) or chemically grind (chemical grinding).Grind as mechanicalness, can use and blow the blasting method that ceramic abrasive grain carries out grinding, use the grinding of polished silicon wafer, grinding stone, combinationally use cmp (the CMP:Chemical Mechanical Polishing) method etc. of abrasive particle and chemical solvent.

In addition, as chemical grinding (also referred to as Wet-type etching), the method using the surface of chemical solution to glass substrate to grind can be adopted.

Wherein, from the viewpoint of the flatness of the second interarea 20b of the glass substrate 20 after grinding and cleanliness factor higher, preferred cmp.In addition, as the abrasive particle used in cmp, the known abrasive particles such as cerium oxide can be used.

< electronic device (glass substrate of band member) and manufacture method > thereof

In the present invention, above-mentioned glass laminate manufacture is used to comprise the electronic device of glass substrate and component used for electronic device (glass substrate of band member).

The manufacture method of this electronic device is not particularly limited, from the viewpoint of the productivity ratio excellence of electronic device, be preferably as follows method: the glass substrate in above-mentioned glass laminate is formed the duplexer that component used for electronic device carrys out fabricated ribbon component used for electronic device, isolate the supporting substrate of electronic device and tape tree lipid layer using the interface, glass substrate side of silicone resin layer as release surface from the duplexer of resulting tape component used for electronic device.

Below, operation glass substrate in above-mentioned glass laminate being formed component used for electronic device and come the duplexer of fabricated ribbon component used for electronic device is called component formation process, the operation isolating the supporting substrate of electronic device and tape tree lipid layer as release surface from the duplexer of having electronic device component using the interface, glass substrate side of silicone resin layer is called separation circuit.

Below the material used in each operation and step are described in detail.

(component formation process)

Component formation process is the operation glass substrate 20 in the glass laminate 100 obtained in above-mentioned lamination process being formed component used for electronic device.More specifically, as shown in (A) of Fig. 6, at the upper formation of the second interarea 20b (exposing surface) component 22 used for electronic device of glass substrate 20, obtain the duplexer 24 of having electronic device component.

First the component used for electronic device 22 used in this operation is described in detail, then the step of operation is described in detail.

(component used for electronic device (functional element))

Component 22 used for electronic device is formed on the glass substrate 20 in glass laminate 100, is the component at least partially forming electronic device.More specifically, as component 22 used for electronic device, the component (such as display device component, component used for solar batteries, thin-film secondary battery component, electronic component-use circuit) for the electronic units such as display unit panel, solar cell, thin-film secondary battery or the semiconductor crystal wafer being formed with circuit on surface etc. can be listed.

Such as, as component used for solar batteries, for silicon type, the transparency electrodes such as the tin oxide of positive pole can be listed, with the metal etc. of the silicon layer that p layer/i layer/n layer represents and negative pole, the various components etc. corresponding with compound type, dye sensitization type, quantum point type etc. can be listed in addition.

In addition, as thin-film secondary battery component, for type lithium ion, transparency electrode, the lithium compound of dielectric substrate, the metal of current collection layer, the resin etc. as encapsulated layer such as metal or metal oxide of positive pole and negative pole can be listed, the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc. can be listed in addition.

In addition, as electronic component-use circuit, for CCD, CMOS, the silica, silicon nitride etc. of the metal of conductive part, insulation division can be listed, the various components etc. that sensor various with pressure sensor, acceleration sensor etc., printed circuit board, flexible printed circuit board, rigid flexible printed circuit board etc. are corresponding can be listed in addition.

(step of operation)

The manufacture method of the duplexer 24 of above-mentioned having electronic device component is not particularly limited, uses known method to form component 22 used for electronic device on the second interarea 20b of the glass substrate 20 of glass laminate 100 according to the kind of the member of formation of component used for electronic device.

It should be noted that, component 22 used for electronic device can not be whole (hereinafter referred to as " whole components ") of the component finally formed on the second interarea 20b of glass substrate 20, but a part (hereinafter referred to as " partial component ") for whole component.Also in subsequent handling, the glass substrate of the band portion component peeled off from silicone resin layer 16 can be made and be with the glass substrate of whole component (being equivalent to electronic device described later).

In addition, for the glass substrate of the whole component of band peeled off from silicone resin layer 16, other components used for electronic device can be formed with in its release surface (the first interarea 20a).In addition, also can the duplexer of the whole component of assembled belt, then carry the supporting substrate 18 of the duplexer release band resin bed of whole component to manufacture electronic device.And then also can use 2 duplexer assembling electronic devices being with whole components, the supporting substrate 18 that the duplexer then carrying whole component peels off 2 tape tree lipid layer manufactures the electronic device with 2 glass substrates.

Such as, during to manufacture the situation of OLED, in order to the glass substrate 20 in glass laminate 100 with the surface of silicone resin layer 16 side opposite side (is equivalent to the second interarea 20b of glass substrate 20) forms organic EL structure and carry out following various layers formed, process: form transparency electrode, evaporation hole injection layer, hole transmission layer, luminescent layer, electron transfer layer etc. on the face defining transparency electrode again, form backplate, use package board encapsulation etc.Formed as these layers, process, specifically, include, for example out the bonding process etc. of film forming process, vapor deposition treatment, package board.

In addition, such as, when manufacturing TFT-LCD, its manufacture method has following various operations etc.: TFT formation process, wherein, on the second interarea 20b of the glass substrate 20 of glass laminate 100, use anti-corrosion liquid to carry out pattern formation to the metal film formed by the conventional membrane formation process such as CVD and sputtering method and metal oxide film etc., form thin film transistor (TFT) (TFT); CF formation process, wherein, on the second interarea 20b of the glass substrate 20 of another glass laminate 100, is used for pattern and is formed, form colour filter (CF) by anti-corrosion liquid; And bonding process, wherein, by stacked for the duplexer of the band CF obtained in the duplexer of the band TFT obtained in TFT formation process and CF formation process.

In TFT formation process, CF formation process, well-known photoetching technique, etching technique etc. is used to form TFT, CF on the second interarea 20b of glass substrate 20.Now, as the coating fluid that pattern is formed, anti-corrosion liquid can be used.

It should be noted that, before formation TFT, CF, can clean the second interarea 20b of glass substrate 20 as required.As cleaning method, well-known dry clean, wet-cleaned can be used.

In bonding process, the colour filter forming surface making the thin film transistor (TFT) forming surface of the duplexer of band TFT and the duplexer of band CF in opposite directions, uses sealant (such as unit formation ultraviolet hardening sealant) to fit.Then, in the unit formed by the duplexer of band TFT and the duplexer of band CF, liquid crystal material is injected.As the method injecting liquid crystal material, such as, there is decompression injection method, drip injection method.

(separation circuit)

Separation circuit is as shown in (B) of Fig. 6, following operation: using the interface of silicone resin layer 16 and glass substrate 20 as release surface, the duplexer 24 of the having electronic device component obtained from above-mentioned component formation process is isolated and is laminated with the glass substrate 20 (electronic device) of component 22 used for electronic device and the supporting substrate 18 of tape tree lipid layer, obtains the electronic device 26 comprising component 22 used for electronic device and glass substrate 20.

When component used for electronic device on glass substrate 20 during stripping 22 is for forming required all member of formation a part of, also can form all the other member of formation after isolation on glass substrate 20.

The method peeled off by the supporting substrate 18 of glass substrate 20 and tape tree lipid layer is not particularly limited.Specifically, such as can insert the object of sharp cutter shape at glass substrate 20 and the interface of silicone resin layer 16, form the starting point peeled off, then blow water and compressed-air actuated fluid-mixing etc. to peel off.Preferably: with the supporting substrate 10 of the duplexer 24 of having electronic device component be upside, component used for electronic device 22 side is downside mode is arranged on platform, component 22 side used for electronic device vacuum suction (is carried out successively two sides is laminated with supporting substrate) on platform, first makes cutter invade glass substrate 20-silicone resin layer 16 interface in this condition.Then, then with multiple vacuum cup adsorbent support substrate 10 side, from the near sites inserting cutter, vacuum cup is made to increase successively.So, form air layer in silicone resin layer 16 and the interface of glass substrate 20, the cohesional failure face of silicone resin layer 16, this air layer to interface, the expansion of whole of cohesional failure face, can easily supporting substrate 10 be peeled off.

In addition, supporting substrate 10 stackedly with new glass substrate can manufacture glass laminate 100 of the present invention.

In addition, when from the duplexer 24 separate electronic device 26 of having electronic device component, being undertaken by utilizing ion generator blowing, controlled humidity, the fragment Electrostatic Absorption of silicone resin layer 16 can be suppressed further in electronic device 26.

The compact display apparatus that the mobile terminal that the manufacture method of above-mentioned electronic device 26 is suitable for manufacturing mobile phone, PDA and so on uses.Display unit mainly contains LCD or OLED; As LCD, comprise TN type, STN type, FE type, TFT type, mim type, IPS type, VA type etc.Substantially all can apply when arbitrary display unit of passive driving types, active-drive.

As the electronic device 26 manufactured with said method, can list: the display unit panel with glass substrate and display device component, there is the solar cell of glass substrate and component used for solar batteries, there is the thin-film secondary battery of glass substrate and thin-film secondary battery component, there is the electronic unit etc. of glass substrate and component used for electronic device.As display unit panel, comprise liquid crystal panel, organic EL panel, Plasmia indicating panel, field emission panel etc.

Embodiment

By the following examples etc. further illustrate the present invention, but the present invention is not limited to these examples.

In following embodiment and comparative example, as glass substrate, use the glass plate (long 880mm, wide 680mm, thickness of slab 0.2mm, the linear expansion coefficient 38 × 10 that are formed by alkali-free pyrex ^-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").In addition, as supporting substrate, the glass plate (long 920mm, wide 730mm, thickness of slab 0.5mm, the linear expansion coefficient 38 × 10 that are formed by alkali-free pyrex is equally used ^-7/ DEG C, Asahi Glass Co., Ltd manufacture, trade name " AN100 ").

< embodiment 1>

At the beginning, by the surface of supporting substrate with after aqueous alkali cleaning, with pure water cleaning, thus purifying.

Then, solution S mould described later being coated with machine (coating speed: 40mm/s, discharge rate: 8ml) is coated on the first interarea of supporting substrate, layer (curable silicone composition layer) containing uncured bridging property organopolysiloxane is arranged on supporting substrate, obtains supporting substrate (the coated weight 20g/m being with curability layer ²).

(solution S)

Will as (the AZmax company manufacture of the straight-chain ethylene ylmethyl polysiloxanes of composition (A), trade name " VDT-127 ", viscosity at 25 DEG C: 700-800cP (centipoise), the mol%:0.325 of the vinyl in organopolysiloxane 1mol) and as composition (B) straight-chain methyl hydrogen polysiloxanes (AZmax company manufacture, trade name " HMS-301 ", viscosity at 25 DEG C: 25-35cP (centipoise), 1 intramolecular bond is in the quantity of the hydrogen atom of silicon atom: 8) mixing, whole vinyl is made to be 0.9 with the mol ratio (hydrogen atom/vinyl) of the whole hydrogen atoms being bonded to silicon atom, relative to this mixture of siloxanes 100 mass parts, mix as silicon compound (boiling point: 120 DEG C) 1 mass parts with acetylene class unsaturated group shown in the following formula (1) of composition (C).

HC ≡ C-C (CH ₃) ₂-O-Si (CH ₃) ₃formula (1)

Then, relative to the total amount of composition (A), composition (B) and composition (C), the mode being 100ppm with the platinum concentration converted by platinum adds platinum group catalyst (manufacture of organosilicon Co., Ltd. of SHIN-ETSU HANTOTAI, trade name " CAT-PL-56 "), obtains the mixed liquor of organopolysiloxane composition.And then, relative to mixed liquor 100 mass parts of gained, add IP Solvent2028 (initial boiling point: 200 DEG C, Idemitsu Kosen Co., Ltd.'s manufacture) 150 mass parts, obtain mixed solution.

Then, the supporting substrate of above-mentioned band curability layer is loaded in the front end of the multiple supporting pins being arranged at the bottom in heat treatment apparatus.In addition,, there is in the second interarea side of supporting substrate the region do not contacted with supporting pin in the front end of supporting pin and the surface contact of the second interarea side (with there is curable silicone composition layer side opposite side) of the supporting substrate in the supporting substrate of band curability layer.

In heat treatment apparatus, at the top configuration heating plate of the curable silicone composition layer of the supporting substrate of band curability layer, this heating plate is utilized to carry out heating (prebake heating) in 3 minutes to the supporting substrate of band curability layer at 200 DEG C.

Then, for the supporting substrate of the band curability layer after above-mentioned heating, at 250 DEG C, implement the heating (curing process afterwards) in 1450 seconds further, form the silicone resin layer of thickness 8 μm at the first interarea of supporting substrate.

Then, at room temperature by atmospheric pressure compacting, the organic siliconresin aspect on glass substrate and supporting substrate is fitted, obtain glass laminate A.

In the glass laminate A of gained, supporting substrate and do not produce between glass substrate and silicone resin layer bubble ground not closely sealed, also there is not deformation defect, flatness is also good.In addition, in glass laminate A, the peel strength at the interface of the layer of silicone resin layer and supporting substrate is greater than the peel strength at the layer of glass substrate and the interface of silicone resin layer.

Then, sided corona treatment (electric power 1kW, processing speed 4m/min) is implemented to the second interarea of the supporting substrate in the glass laminate A of gained.

Water contact angle before and after the sided corona treatment measuring the second interarea of the supporting substrate in glass laminate A is 70 degree before result sided corona treatment, be 5 degree after sided corona treatment.According to these measurement results, the organic siliconresin being eliminated the second interarea side being attached to supporting substrate by sided corona treatment can be confirmed.

(peel off and evaluate)

To make to implement the mode that the supporting substrate in the glass laminate A of sided corona treatment contacts with the cushion of polyurethane, this glass laminate A is positioned on cushion.Then, with 100g/cm ², glass laminate A is crimped on cushion by 120 seconds.After crimping, to blow air between supporting substrate and cushion and water, while carry out both strippings, result can be peeled off.

In addition, have also been obtained result similar to the above when the processing speed in sided corona treatment is changed to 1m/min, 6m/min.

< comparative example 1>

Except not implementing sided corona treatment, obtain glass laminate B according to the step same with above-described embodiment 1.

Use glass laminate B to replace glass laminate A, carry out above-mentioned (peel off and evaluate), result fails to peel off glass laminate B.

< embodiment 2>

The glass laminate A implementing sided corona treatment obtained in embodiment 1 is used to manufacture OLED in this example.

First, the second interarea of the glass substrate in glass laminate A makes silicon nitride, silica, non-crystalline silicon film forming successively by plasma CVD method.Then, in amorphous silicon layer, injected the boron of low concentration by ion doping apparatus, heat in a nitrogen atmosphere, and carry out Dehydroepiandrosterone derivative.Then, the crystallization process of amorphous silicon layer is carried out by laser anneal device.Then, by the phosphorus using photolithographic etching and ion doping apparatus to inject low concentration in amorphous silicon layer, the TFT zone of N-type and P type is formed.Then, by plasma CVD method after the second interarea side of glass substrate makes silicon oxide film film forming, formation gate insulating film, making molybdenum film forming by sputtering method, forming gate electrode by using photolithographic etching.Then, lithographically with ion doping apparatus to N-type, P type separately desired by region inject the boron of high concentration and phosphorus, form source region and drain region.Then, in the second interarea side of glass substrate, interlayer dielectric is formed by utilizing the film forming of the silica of plasma CVD method, by utilizing the film forming of the aluminium of sputtering method and using photolithographic etching to form TFT electrode.Then, in a hydrogen atmosphere, carry out heating and after carrying out hydrogenation treatment, form passivation layer by utilizing the film forming of the silicon nitride of plasma CVD method.Then, at the second interarea side coated UV line curable resin of glass substrate, lithographically planarization layer and contact hole is formed.Then, making tin indium oxide film forming by sputtering method, forming pixel capacitors by using photolithographic etching.

Then, following material film forming is made successively in the second interarea side of glass substrate: as 4 of positive hole injecting layer by vapour deposition method, 4'; 4 "-three (3-methylphenylphenyl amino) triphenylamine, as two [(N-naphthyl)-N-phenyl] benzidine of positive hole transport layer, in oxine aluminium complex (Alq3), be mixed with 40 volume %2 as luminescent layer, 6-two [4-[N-(4-methoxyphenyl)-N-phenyl] aminostyryl] mixture of naphthalene-1,5-dintrile (BSN-BCN), the Alq3 as electron transfer layer.Then, aluminium film forming is made by sputtering method, by using photolithographic etching shape paired electrode.Then, encapsulate by the adhesive linkage of ultraviolet hardening another glass substrate of fitting in the second interarea side of glass substrate.Organic EL structure is formed on the glass substrate according to above-mentioned steps.The glass laminate A (hereinafter referred to as panel A) on the glass substrate with organic EL structure is the duplexer of having electronic device component of the present invention.

Then, make the encapsulation side vacuum suction of panel A in platform, the stainless steel cutter of the interface inserting thickness 0.1mm of the glass substrate then in the bight of panel A and resin bed, form at the interface of glass substrate and resin bed the starting point peeled off.Then, with supporting substrate first interarea of vacuum cup absorption panel A, sucker is then made to increase.Herein, blow except electronic fluids while carry out the insertion of cutter to this interface from ion generator (manufacture of Keyemce company).Then, continue to blow except electronic fluids towards formed space from ion generator, and to stripping front water filling while promote vacuum cup.As a result, platform only leaves the glass substrate defining organic EL structure, the supporting substrate of tape tree lipid layer can be peeled off.

Then, use laser cutter or scribing and breaking to cut off to be separated glass substrate, after being divided into multiple unit, by define organic EL structure glass substrate and in opposite directions substrate assemble, enforcement module generation operation makes OLED.The OLED so obtained characteristically does not have problems.

With reference to specific embodiment to invention has been detailed description, but it will be apparent to those skilled in the art that and various change, correction are carried out to the present invention with can not departing from the spirit and scope of the present invention.

The Japanese Patent that the application submitted to based on December 17th, 2013 goes out to be willing to 2013-260453, and its content is incorporated in this as reference.

Claims

1. a manufacture method for glass laminate, described glass laminate has supporting substrate, silicone resin layer and glass substrate successively, and the method comprises following operation:

Heating process, wherein, the supporting substrate possessing the supporting substrate with the first interarea and the second interarea and the band curability layer being configured in the curable silicone composition layer on described first interarea of described supporting substrate is supported from the described second multiple supporting pin in interarea side of described supporting substrate, implement to heat to the supporting substrate of described band curability layer, form silicone resin layer;

Lamination process, wherein, after described heating process, laminated glass substrate on described silicone resin layer;

Surface treatment procedure, wherein, after described lamination process or after described heating process and before described lamination process, at least described second interarea of described supporting substrate is implemented at least a kind of process be selected from the group be made up of sided corona treatment, plasma treatment and UV ozone treatment.

2. the manufacture method of glass laminate according to claim 1, wherein, described curable silicone composition layer is at least containing having the organic chain thiazolinyl polysiloxanes of alkenyl and having the organic hydrogen polysiloxanes with the hydrogen atom of silicon atom bonding.

3. the manufacture method of glass laminate according to claim 1 and 2, wherein, described heating process possesses the 1st heating process implementing heating in the 1st temperature and the 2nd heating process heated in the 2nd temperature enforcement higher than described 1st temperature successively.

4. the manufacture method of glass laminate according to claim 3, wherein, the supporting substrate of described band curability layer is by described first interarea that the curable silicone composition containing curable silicone and solvent is coated on described supporting substrate is formed

Described 1st temperature meets: the initial boiling point+30 DEG C of initial boiling point-30 DEG C≤the 1st temperature≤described solvent of described solvent.

5. the manufacture method of the glass laminate according to any one of Claims 1 to 4, wherein, after described lamination process, implements surface treatment procedure.

6. the manufacture method of glass laminate according to claim 5, wherein, in described surface treatment procedure, throughput direction along described glass laminate arranges multiple electrode pair, described electrode pair possesses the transport path of glass laminate that obtains in the described lamination process of conveying and high-field electrode in opposite directions and earth electrode, a high-field electrode in adjacent described electrode pair is configured at the side across described transport path, another high-field electrode is configured at the opposite side across described transport path

While carry described glass laminate along described transport path, high frequency voltage is applied to described high-field electrode, sided corona treatment is implemented to described glass laminate.

7. a manufacture method for electronic device, the method comprises following operation:

Component formation process, wherein, the surface of the described glass substrate of the glass laminate by the manufacture method manufacture according to any one of claim 1 ~ 6 forms component used for electronic device, obtains the duplexer of having electronic device component;

Separation circuit, wherein, removes the supporting substrate with the tape tree lipid layer of described silicone resin layer and described supporting substrate from the duplexer of described having electronic device component, obtains the electronic device with described glass substrate and described component used for electronic device.