TW201536710A - Manufacturing method of glass laminated body and manufacturing method of electronic device - Google Patents

Manufacturing method of glass laminated body and manufacturing method of electronic device Download PDF

Info

Publication number
TW201536710A
TW201536710A TW103144170A TW103144170A TW201536710A TW 201536710 A TW201536710 A TW 201536710A TW 103144170 A TW103144170 A TW 103144170A TW 103144170 A TW103144170 A TW 103144170A TW 201536710 A TW201536710 A TW 201536710A
Authority
TW
Taiwan
Prior art keywords
glass
substrate
support substrate
resin layer
glass laminate
Prior art date
Application number
TW103144170A
Other languages
Chinese (zh)
Other versions
TWI627148B (en
Inventor
Yuichi Hino
Yutaka Otsubo
Takuya Nagano
Hiroshi Utsugi
Tatsuzo MIYAGOE
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW201536710A publication Critical patent/TW201536710A/en
Application granted granted Critical
Publication of TWI627148B publication Critical patent/TWI627148B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/0008Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Fluid Mechanics (AREA)
  • Thermal Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Electroluminescent Light Sources (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

The present invention relates to a method for manufacturing a glass laminate having a support substrate, a silicon resin layer, and a glass substrate in order. The method includes: a hating process of supporting, with a plurality of support pins, a support substrate, having a first main side and a second main side, and a curable layer attachment support substrate including a curable silicon composition layer arranged on the first side of the support substrate from the second main side of the support substrate, heating the curable layer attachment support substrate, and forming a silicon resin layer; a laminating process of laminating the glass substrate on the silicon resin layer after the heating process; and a surface treating process of executing, on the second main side of the support substrate, at least one treatment selected from the group consisting of corona treatment, plasma treatment, and UV ozone treatment.

Description

玻璃積層體之製造方法及電子裝置之製造方法 Method for manufacturing glass laminate and method for manufacturing electronic device

本發明係關於一種玻璃積層體之製造方法、及電子裝置之製造方法。 The present invention relates to a method for producing a glass laminate and a method for producing an electronic device.

近年來,太陽電池(PV)、液晶面板(LCD)、有機EL(Electroluminescence,電致發光)面板(OLED)等裝置(電子設備)之薄型化、輕量化不斷進展,該等裝置所使用之玻璃基板之薄板化正不斷發展。若因薄板化導致玻璃基板之強度不足,則於裝置之製造步驟中,玻璃基板之操作性降低。 In recent years, thinner and lighter devices (electronic devices) such as solar cells (PV), liquid crystal panels (LCDs), and organic EL (Electroluminescence) panels (OLEDs) have been developed, and the glass used in such devices has been progressing. The thinning of the substrate is constantly evolving. If the strength of the glass substrate is insufficient due to thinning, the handleability of the glass substrate is lowered in the manufacturing process of the device.

最近,為了應對上述課題,而提出有如下方法,即準備積層有玻璃基板與補強板之玻璃積層體,於玻璃積層體之玻璃基板上形成顯示裝置等電子裝置用構件後,將補強板自玻璃基板分離(例如,參照專利文獻1)。補強板具有支持基板、及固定於該支持基板上之聚矽氧樹脂層,且將聚矽氧樹脂層與玻璃基板以可剝離之方式進行密接。於玻璃積層體之聚矽氧樹脂層與玻璃基板之界面將補強板剝離,自玻璃基板分離之補強板可與新的玻璃基板積層,而作為玻璃積層體進行再利用。 Recently, in order to cope with the above-mentioned problems, a glass laminate in which a glass substrate and a reinforcing plate are laminated is prepared, and a member for an electronic device such as a display device is formed on a glass substrate of a glass laminate, and then the reinforcing plate is made of glass. The substrate is separated (for example, refer to Patent Document 1). The reinforcing plate has a supporting substrate and a polyoxyalkylene resin layer fixed to the supporting substrate, and the polyoxyxylene resin layer and the glass substrate are adhered to each other in a peelable manner. The reinforcing plate is peeled off at the interface between the polyoxygen resin layer of the glass laminate and the glass substrate, and the reinforcing plate separated from the glass substrate can be laminated with a new glass substrate to be reused as a glass laminate.

再者,亦有對所形成之玻璃積層體為了研磨玻璃基板之表面而實施研磨處理之情形(專利文獻2)。 Further, there is a case where the glass laminate formed is subjected to a polishing treatment for polishing the surface of the glass substrate (Patent Document 2).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2007/018028號 [Patent Document 1] International Publication No. 2007/018028

[專利文獻2]日本專利特開2013-149713號 [Patent Document 2] Japanese Patent Laid-Open No. 2013-149713

另一方面,自先前已知有將表面配置有塗膜之支持基板載置於複數個支持銷之頂部而進行加熱乾燥之方法。 On the other hand, a method in which a support substrate having a coating film on its surface is placed on top of a plurality of support pins and heated and dried is known.

本發明者等人依據專利文獻1所記載之方法而製作補強板時,將表面配置有藉由加熱而成為聚矽氧樹脂層之塗膜的支持基板載置於複數個支持銷之頂部而進行加熱乾燥,形成聚矽氧樹脂層後,於聚矽氧樹脂層上積層玻璃基板而製作玻璃積層體。其後,使所獲得之玻璃積層體中之支持基板側朝向特定之基板側,將玻璃積層體載置於特定之基板上,如專利文獻1或2所記載般,於玻璃積層體中之玻璃基板上形成電子裝置用構件、或對玻璃基板表面進行研磨處理。其後,於欲自特定之基板卸除玻璃積層體時,特定之基板與支持基板密接,玻璃積層體被固定於特定之基板上而無法容易地卸除。因此,引起由製程時間之長期化引起之生產性之降低、或電子裝置之製造良率之降低。 When the inventors of the present invention have produced a reinforcing plate according to the method described in Patent Document 1, the support substrate on which the coating film of the polyoxyxylene resin layer is heated by the surface is placed on top of a plurality of support pins. After heating and drying to form a polyoxyxylene resin layer, a glass substrate was laminated on the polyoxynitride resin layer to prepare a glass laminate. Then, the support substrate side of the obtained glass laminate is oriented toward a specific substrate side, and the glass laminate is placed on a specific substrate, and the glass in the glass laminate is as described in Patent Document 1 or 2. A member for an electronic device is formed on the substrate, or a surface of the glass substrate is polished. Thereafter, when the glass laminate is to be removed from the specific substrate, the specific substrate is in close contact with the support substrate, and the glass laminate is fixed to the specific substrate and cannot be easily removed. Therefore, the productivity is lowered due to the long-term processing time, or the manufacturing yield of the electronic device is lowered.

本發明係鑒於上述課題而完成者,其目的在於提供一種玻璃積層體之製造方法,該製造方法可製造使支持基板側朝向各種基板上載置後可容易自該基板剝離之玻璃積層體。 The present invention has been made in view of the above-described problems, and an object of the invention is to provide a method for producing a glass laminate which is capable of producing a glass laminate which can be easily peeled off from the substrate after the support substrate side is placed on various substrates.

又,本發明之目的亦在於提供一種使用藉由該玻璃積層體之製造方法製造之玻璃積層體的電子裝置之製造方法。 Moreover, an object of the present invention is to provide a method of manufacturing an electronic device using a glass laminate produced by the method for producing a glass laminate.

本發明者等人為解決上述課題而進行努力研究,結果完成本發明。 The inventors of the present invention have diligently studied to solve the above problems, and as a result, have completed the present invention.

即,本發明之第1態樣係一種玻璃積層體之製造方法,其係依序具有支持基板、聚矽氧樹脂層及玻璃基板之玻璃積層體之製造方法, 且其包含:加熱步驟,其係對包含具有第1主面及第2主面之支持基板以及配置於支持基板之第1主面上之硬化性聚矽氧組合物層的附硬化性層之支持基板自支持基板之第2主面側利用複數個支持銷進行支持,對附硬化性層之支持基板實施加熱處理而形成聚矽氧樹脂層;積層步驟,其係於加熱步驟後,於聚矽氧樹脂層上積層玻璃基板;及表面處理步驟,其係於積層步驟後,或於加熱步驟後且積層步驟前,至少對支持基板之第2主面實施選自由電暈處理、電漿處理、及UV(Ultra Violet,紫外線)臭氧處理所組成之群中之至少1種處理。 That is, the first aspect of the present invention is a method for producing a glass laminate, which is a method for producing a glass laminate having a support substrate, a polyoxyxylene resin layer, and a glass substrate. Further, the method includes a heating step of attaching a curable layer comprising a support substrate having a first main surface and a second main surface, and a curable polyoxynitride composition layer disposed on the first main surface of the support substrate. The support substrate is supported by a plurality of support pins on the second main surface side of the support substrate, and the support substrate with the curable layer is subjected to heat treatment to form a polyoxymethylene resin layer; and the layer stacking step is performed after the heating step. a layer of the glass substrate on the epoxy resin layer; and a surface treatment step, after the step of laminating, or after the heating step and before the step of laminating, at least the second main surface of the supporting substrate is selected from the group consisting of corona treatment and plasma treatment And at least one of a group consisting of UV (Ultra Violet) ozone treatment.

於第1態樣中,較佳為於硬化性聚矽氧組合物層中至少含有具有烯基之有機烯基聚矽氧烷、及具有鍵結於矽原子之氫原子之有機氫聚矽氧烷。 In the first aspect, it is preferred that the hardenable polyoxynitride composition layer contains at least an alkenyl group-containing organic alkenyl polyoxyalkylene and an organic hydrogen polyoxynitrene having a hydrogen atom bonded to a deuterium atom. alkyl.

於第1態樣中,加熱步驟較佳為依序包含於第1溫度下實施加熱處理之第1加熱步驟、及於較第1溫度高之第2溫度下實施加熱處理之第2加熱步驟。 In the first aspect, the heating step preferably includes a first heating step of performing heat treatment at the first temperature and a second heating step of performing heat treatment at a second temperature higher than the first temperature.

於第1態樣中,附硬化性層之支持基板係藉由將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於支持基板之第1主面上而形成,且 第1溫度較佳為滿足溶劑之初餾點-30℃≦第1溫度≦溶劑之初餾點+30℃。 In the first aspect, the support substrate with the curable layer is formed by applying a curable polysulfonium oxide composition containing a curable polyfluorene oxide and a solvent to the first main surface of the support substrate, and The first temperature is preferably such that the initial boiling point of the solvent is -30 ° C ≦ the first temperature ≦ the initial boiling point of the solvent + 30 ° C.

於第1態樣中,較佳為於積層步驟後實施表面處理步驟。 In the first aspect, it is preferred to carry out the surface treatment step after the lamination step.

於第1態樣中,較佳為於表面處理步驟中,使複數對包含隔著積層步驟中所獲得之玻璃積層體被搬送之搬送路徑相對向之高壓電極與接地電極的電極對沿著玻璃積層體之搬送方向進行排列,將鄰接之電極對中之一者之高壓電極配置於隔著搬送路徑之一側,將另一者之高壓電極配置於隔著搬送路徑之另一側,且一面將玻璃積層體沿著搬送路徑進行搬送,一面向高壓電極施加高頻電壓,而對玻璃積層體實施 電暈處理。 In the first aspect, preferably, in the surface treatment step, the pair of electrodes including the high-voltage electrode and the ground electrode facing the transport path through which the glass laminate obtained in the step of stacking is transported is along the glass. The transport direction of the laminated body is arranged, and one of the adjacent electrode pairs is placed on one side of the transport path, and the other high voltage electrode is placed on the other side of the transport path. The glass laminate is transported along the transport path, and a high-frequency voltage is applied to the high-voltage electrode, and the glass laminate is applied to the glass laminate. Corona treatment.

本發明之第2態樣係一種電子裝置之製造方法,其包含:構件形成步驟,其係於藉由上述第1態樣之製造方法製造之玻璃積層體之玻璃基板的表面上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及分離步驟,其係自附電子裝置用構件之積層體去除具有聚矽氧樹脂層及支持基板之附樹脂層之支持基板,而獲得具有玻璃基板與電子裝置用構件之電子裝置。 A second aspect of the present invention provides a method of manufacturing an electronic device, comprising: a member forming step of forming an electronic device on a surface of a glass substrate of a glass laminate produced by the manufacturing method of the first aspect; a laminate for obtaining a member for an electronic device; and a separating step of removing a support substrate having a resin layer of a polyoxyxylene resin layer and a support substrate from a laminate of the member for an electronic device, thereby obtaining a glass An electronic device for a member for a substrate and an electronic device.

根據本發明,可提供一種玻璃積層體之製造方法,該製造方法可製造使支持基板側朝向各種基板上載置後可容易自該基板剝離之玻璃積層體。 According to the present invention, there is provided a method for producing a glass laminate which can produce a glass laminate which can be easily peeled off from the substrate after the support substrate side is placed on various substrates.

又,根據本發明,亦可提供一種使用藉由該玻璃積層體之製造方法製造之玻璃積層體的電子裝置之製造方法。 Moreover, according to the present invention, it is also possible to provide a method of manufacturing an electronic device using a glass laminate produced by the method for producing a glass laminate.

10‧‧‧支持基板 10‧‧‧Support substrate

10a‧‧‧支持基板之第2主面 10a‧‧‧Support the second main surface of the substrate

12‧‧‧硬化性聚矽氧組合物層 12‧‧‧ hardened polysiloxane composition layer

14‧‧‧附硬化性層之支持基板 14‧‧‧Support substrate with hardened layer

16‧‧‧聚矽氧樹脂層 16‧‧‧Polyoxy resin layer

16a‧‧‧聚矽氧樹脂層中之與支持基板側相反側之表面 16a‧‧‧ Surface of the polyoxyl resin layer opposite to the support substrate side

18‧‧‧附樹脂層之支持基板 18‧‧‧Support substrate with resin layer

20‧‧‧玻璃基板 20‧‧‧ glass substrate

20a‧‧‧玻璃基板之第1主面 20a‧‧‧1st main surface of the glass substrate

20b‧‧‧玻璃基板之第2主面 20b‧‧‧2nd main surface of the glass substrate

22‧‧‧電子裝置用構件 22‧‧‧Members for electronic devices

24‧‧‧附電子裝置用構件之積層體 24‧‧‧Laminated body of components for electronic devices

26‧‧‧電子裝置 26‧‧‧Electronic devices

50‧‧‧支持台 50‧‧‧Support desk

52‧‧‧支持銷 52‧‧‧Support pins

60‧‧‧電暈處理裝置 60‧‧‧Corona treatment device

62‧‧‧第1高壓電極 62‧‧‧1st high voltage electrode

64‧‧‧第1接地電極 64‧‧‧1st grounding electrode

66‧‧‧第2高壓電極 66‧‧‧2nd high voltage electrode

68‧‧‧第2接地電極 68‧‧‧2nd ground electrode

70‧‧‧第1電極對 70‧‧‧1st electrode pair

72‧‧‧第2電極對 72‧‧‧2nd electrode pair

74‧‧‧搬送輥 74‧‧‧Transport roller

76‧‧‧第1高頻電源 76‧‧‧1st high frequency power supply

78‧‧‧第2高頻電源 78‧‧‧2nd high frequency power supply

100‧‧‧玻璃積層體 100‧‧‧glass laminate

X‧‧‧玻璃積層體 X‧‧‧glass laminate

圖1係表示本發明之玻璃積層體之製造方法之第1態樣的製造步驟之流程圖。 Fig. 1 is a flow chart showing the manufacturing steps of the first aspect of the method for producing a glass laminate according to the present invention.

圖2(A)、(B)及(C)係以步驟順序表示本發明之玻璃積層體之製造方法之第1態樣的模式剖面圖。 2(A), (B) and (C) are schematic cross-sectional views showing a first aspect of a method for producing a glass laminate according to the present invention in order of steps.

圖3係表示加熱步驟中之附硬化性層之支持基板之配置狀態之模式圖。 Fig. 3 is a schematic view showing an arrangement state of a supporting substrate with a hardenable layer in a heating step.

圖4係表示電暈處理裝置之一實施形態之側視圖。 Fig. 4 is a side view showing an embodiment of a corona treatment device.

圖5係表示本發明之玻璃積層體之製造方法之第2態樣的製造步驟之流程圖。 Fig. 5 is a flow chart showing the manufacturing steps of the second aspect of the method for producing a glass laminate according to the present invention.

圖6(A)及(B)係以步驟順序表示本發明之電子裝置之製造方法之一實施形態的模式剖面圖。 6(A) and 6(B) are schematic cross-sectional views showing an embodiment of a method of manufacturing an electronic device of the present invention in order of steps.

以下,針對本發明之較佳實施態樣,參照圖式進行說明,但本發明並不受以下之實施形態限制,於不脫離本發明之範圍之情況下,可於以下之實施形態中施加各種變化及置換。 In the following, the preferred embodiments of the present invention are described with reference to the drawings, but the present invention is not limited to the following embodiments, and various embodiments may be applied in the following embodiments without departing from the scope of the invention. Change and replacement.

本發明者等人對上述問題進行研究時發現,於加熱步驟後或製作玻璃積層體後(積層步驟後)聚矽氧樹脂附著於支持基板之第2主面(背面)側,其係上述問題之原因之一。 The inventors of the present invention have studied the above problems and found that after the heating step or after the production of the glass laminate (after the lamination step), the polyoxyn resin adheres to the second main surface (back surface) side of the support substrate, which is the problem described above. One of the reasons.

更具體而言,於加熱步驟時,聚矽氧樹脂或其原料之一部分揮發,從而聚矽氧樹脂附著於支持銷所支持之支持基板之第2主面側。因此,使玻璃積層體之支持基板側朝向特定之基板側並將玻璃積層體載置於特定之基板上時,由於存在於該特定之基板與玻璃積層體中之支持基板之間的聚矽氧樹脂而使特定之基板與支持基板之剝離強度上升,從而兩者變得難以剝離。因此,發現於製作玻璃積層體後對支持基板之第2主面側實施各種處理而將聚矽氧樹脂去除,藉此可解決上述課題。 More specifically, in the heating step, one of the polyoxyxylene resin or a raw material thereof is partially volatilized, and the polyoxyxylene resin adheres to the second main surface side of the support substrate supported by the support pin. Therefore, when the support substrate side of the glass laminate is oriented toward a specific substrate side and the glass laminate is placed on a specific substrate, the polysiloxane is present between the specific substrate and the support substrate in the glass laminate. The resin increases the peel strength of the specific substrate and the support substrate, and the two become difficult to peel off. Therefore, it has been found that the above problems can be solved by performing various treatments on the second main surface side of the support substrate after the production of the glass laminate and removing the polyoxymethylene resin.

本發明之玻璃積層體之製造方法包含:對附硬化性層之支持基板實施加熱處理之加熱步驟;積層玻璃基板之積層步驟;及進行表面處理之表面處理步驟。再者,表面處理步驟係於上述積層步驟後,或者於上述加熱步驟後且上述積層步驟前實施。以下,將前者之態樣作為第1態樣,將後者之態樣作為第2態樣而進行說明。 The method for producing a glass laminate according to the present invention includes a heating step of heat-treating a support substrate with a curable layer, a lamination step of laminating a glass substrate, and a surface treatment step of performing surface treatment. Further, the surface treatment step is performed after the above-described lamination step, or after the heating step and before the lamination step. Hereinafter, the former aspect will be described as a first aspect, and the latter aspect will be described as a second aspect.

<<第1態樣>> <<The first aspect>>

圖1係表示本發明之玻璃積層體之製造方法之第1態樣的製造步驟之流程圖。如圖1所示般,第1態樣依序包含:加熱步驟S102、積層步驟S104、及表面處理步驟S106。 Fig. 1 is a flow chart showing the manufacturing steps of the first aspect of the method for producing a glass laminate according to the present invention. As shown in FIG. 1, the first aspect includes, in order, a heating step S102, a lamination step S104, and a surface treatment step S106.

以下,針對各步驟中所使用之材料及其程序進行詳述。首先,對加熱步驟S102進行詳述。 Hereinafter, the materials used in the respective steps and their procedures will be described in detail. First, the heating step S102 will be described in detail.

<加熱步驟> <heating step>

加熱步驟S102係如下步驟,即以複數個支持銷,將包含具有第1主面及第2主面之支持基板以及配置於支持基板之第1主面上之硬化性聚矽氧組合物層的附硬化性層之支持基板自支持基板之第2主面(與有硬化性聚矽氧組合物層之側相反側之面)側進行支持,對附硬化性層之支持基板實施加熱處理而形成聚矽氧樹脂層。更具體而言,針對圖2(A)中之包含支持基板10與硬化性聚矽氧組合物層12之附硬化性層之支持基板14,實施該步驟S102,藉此可獲得如圖2(B)所示般包含支持基板10與聚矽氧樹脂層16之附樹脂層之支持基板18。 The heating step S102 is a step of including a support substrate having a first main surface and a second main surface and a hardenable polyoxynitride composition layer disposed on the first main surface of the support substrate by a plurality of support pins. The support substrate with the curable layer is supported from the second main surface of the support substrate (the surface opposite to the side having the curable polyoxynitride composition layer), and the support substrate with the curable layer is subjected to heat treatment to form Polyoxygenated resin layer. More specifically, the step S102 is performed for the support substrate 14 including the support substrate 10 and the hardenable layer of the curable polyoxynitride composition layer 12 in FIG. 2(A), whereby FIG. 2 can be obtained ( B) A support substrate 18 including a resin-attached layer supporting the substrate 10 and the polyoxy-oxygen resin layer 16 as shown.

以下,首先對本步驟S102中所使用之構件、材料(支持基板、硬化性聚矽氧組合物層)進行詳述,其後,針對步驟S102之程序進行詳述。 Hereinafter, the members and materials (supporting substrate and curable polyoxynitride composition layer) used in the step S102 will be described in detail below, and then the procedure of the step S102 will be described in detail.

(支持基板) (support substrate)

支持基板10具有第1主面與第2主面2個主面,且與下述之聚矽氧樹脂層16協動,支持並補強下述之玻璃基板20,而於下述之構件形成步驟(電子裝置用構件之製造步驟)中防止電子裝置用構件之製造時玻璃基板20之變形、損傷、破損等。又,於使用厚度較先前薄之玻璃基板之情形時,可藉由製成與先前之玻璃基板相同厚度之玻璃積層體,而於構件形成步驟中使用適合先前之厚度之玻璃基板之製造技術或製造設備,其亦為使用支持基板10之目的之一。 The support substrate 10 has two main surfaces of the first main surface and the second main surface, and cooperates with the polyoxyxene resin layer 16 described below to support and reinforce the glass substrate 20 described below. (Manufacturing Procedure of Member for Electronic Device) The deformation, damage, breakage, and the like of the glass substrate 20 during the manufacture of the member for electronic device are prevented. Moreover, in the case of using a glass substrate having a thickness smaller than that of the prior art, a glass laminate having the same thickness as the previous glass substrate can be used, and a manufacturing method suitable for the glass substrate of the previous thickness can be used in the member forming step or The manufacturing equipment is also one of the purposes of using the support substrate 10.

作為支持基板10,例如可使用玻璃板、塑膠板、SUS(Steel Use Stainless,日本不鏽鋼標準)板等金屬板、陶瓷板等。於構件形成步驟伴隨著熱處理之情形時,支持基板10較佳為由與玻璃基板20之線膨脹係數之差較小之材料形成,更佳為由與玻璃基板20相同之材料形成。即,支持基板10較佳為玻璃板。尤其是支持基板10較佳為包含與玻璃基板20相同之玻璃材料之玻璃板。 As the support substrate 10, for example, a glass plate, a plastic plate, a metal plate such as a SUS (Steel Use Stainless) plate, a ceramic plate, or the like can be used. In the case where the member forming step is accompanied by heat treatment, the support substrate 10 is preferably formed of a material having a small difference in linear expansion coefficient from the glass substrate 20, and more preferably formed of the same material as the glass substrate 20. That is, the support substrate 10 is preferably a glass plate. In particular, the support substrate 10 is preferably a glass plate containing the same glass material as the glass substrate 20.

關於支持基板10之厚度,可厚於玻璃基板20,亦可薄於玻璃基 板20。較佳為基於玻璃基板20之厚度、樹脂層16之厚度、及玻璃積層體之厚度而選擇支持基板10之厚度。例如,現行之構件形成步驟係為了對厚度0.5mm之基板進行處理而設計者,於玻璃基板20之厚度與樹脂層16之厚度之和為0.1mm之情形時,將支持基板10之厚度設為0.4mm。支持基板10之厚度於通常之情形時較佳為0.2~5.0mm。 The thickness of the support substrate 10 may be thicker than the glass substrate 20 or thinner than the glass substrate. Board 20. The thickness of the support substrate 10 is preferably selected based on the thickness of the glass substrate 20, the thickness of the resin layer 16, and the thickness of the glass laminate. For example, the current member forming step is designed to treat a substrate having a thickness of 0.5 mm. When the sum of the thickness of the glass substrate 20 and the thickness of the resin layer 16 is 0.1 mm, the thickness of the support substrate 10 is set to 0.4mm. The thickness of the support substrate 10 is preferably 0.2 to 5.0 mm in the usual case.

於支持基板10為玻璃板之情形時,關於玻璃板之厚度,就操作容易、難以破損等理由而言,較佳為0.08mm以上。又,關於玻璃板之厚度,就於電子裝置用構件形成後進行剝離時,期望有如不破損而適度彎曲之剛性之理由而言,較佳為1.0mm以下。 When the support substrate 10 is a glass plate, the thickness of the glass plate is preferably 0.08 mm or more for reasons of easy handling and difficulty in damage. In addition, when the thickness of the glass plate is peeled off after the member for electronic device is formed, it is preferably 1.0 mm or less for the reason that the rigidity is moderately bent without being damaged.

支持基板10與玻璃基板20之於25~300℃下之平均線膨脹係數(以下,簡稱為「平均線膨脹係數」)之差較佳為500×10-7/℃以下,更佳為300×10-7/℃以下,進而較佳為200×10-7/℃以下。若差過大,則於構件形成步驟中之加熱冷卻時,有玻璃積層體猛烈地彎曲,或玻璃基板20與下述之附樹脂層之支持基板18剝離之可能性。於玻璃基板20之材料與支持基板10之材料相同之情形時,可抑制上述問題產生。 The difference between the average linear expansion coefficient (hereinafter, simply referred to as "average linear expansion coefficient") of the support substrate 10 and the glass substrate 20 at 25 to 300 ° C is preferably 500 × 10 -7 / ° C or less, more preferably 300 × 10 -7 / ° C or less, further preferably 200 × 10 -7 / ° C or less. When the difference is too large, the glass laminate is strongly bent during the heating and cooling in the member forming step, or the glass substrate 20 may be peeled off from the support substrate 18 with the resin layer described below. When the material of the glass substrate 20 is the same as the material of the support substrate 10, the above problem can be suppressed.

(硬化性聚矽氧組合物層) (hardened polyoxyl composition layer)

硬化性聚矽氧組合物層係可於本步驟S102中形成聚矽氧樹脂層之組合物之層。 The layer of the curable polyoxynitride composition can form a layer of the composition of the polyoxyxylene resin layer in this step S102.

硬化性聚矽氧組合物層包含進行硬化而成為聚矽氧樹脂之硬化性聚矽氧。此種硬化性聚矽氧係根據其硬化機制而被分類為縮合反應型聚矽氧、加成反應型聚矽氧、紫外線硬化型聚矽氧及電子束硬化型聚矽氧,可使用上述中任一種之硬化型聚矽氧。該等中較佳為加成反應型聚矽氧。其原因在於:硬化反應容易進行,且形成聚矽氧樹脂層時之剝離性之程度良好,並且耐熱性亦較高。 The curable polyoxynitride composition layer contains a curable polyfluorene which is hardened to form a polyoxyxylene resin. Such a sclerosing polyfluorene is classified into a condensation reaction type polyoxane, an addition reaction type polyoxane, an ultraviolet curing type polyfluorene oxygen, and an electron beam hardening type polyoxane according to the hardening mechanism thereof, and the above may be used. Any of the hardened polyfluorene oxides. Among these, an addition reaction type polyoxane is preferred. The reason for this is that the hardening reaction proceeds easily, and the degree of peeling property when the polyoxynoxy resin layer is formed is good, and the heat resistance is also high.

加成反應型聚矽氧係含有主劑及交聯劑,且於鉑系觸媒等觸媒之存在下進行硬化之硬化性組合物。加成反應型聚矽氧之硬化係藉由 加熱處理而促進。加成反應型聚矽氧中之主劑較佳為具有鍵結於矽原子之烯基(乙烯基等)之有機聚矽氧烷(即,有機烯基聚矽氧烷;再者,較佳為直鏈狀),且烯基等成為交聯點。加成反應型聚矽氧中之交聯劑較佳為具有鍵結於矽原子之氫原子(氫化矽烷基)之有機聚矽氧烷(即,有機氫聚矽氧烷;再者,較佳為直鏈狀),且氫化矽烷基等成為交聯點。 The addition reaction type polyoxo oxygen-based composition contains a main component and a crosslinking agent, and is hardened by the presence of a catalyst such as a platinum-based catalyst. Addition reaction type polyoxyl Promoted by heat treatment. The main component in the addition reaction type polyoxo is preferably an organic polyoxyalkylene having an alkenyl group (vinyl group or the like) bonded to a halogen atom (i.e., an organic alkenyl polyoxyalkylene; further, preferably It is a linear chain), and an alkenyl group etc. become a crosslinking point. The crosslinking agent in the addition reaction type polyoxo is preferably an organic polyoxyalkylene having a hydrogen atom (hydrogenated alkylene group) bonded to a halogen atom (that is, an organic hydrogen polyoxyalkylene; further, preferably It is linear), and a hydrogenated alkylene group or the like becomes a crosslinking point.

加成反應型聚矽氧係藉由主劑與交聯劑之交聯點進行加成反應而進行硬化。再者,就源自交聯結構之耐熱性更優異之方面而言,有機氫聚矽氧烷之鍵結於矽原子之氫原子相對於有機烯基聚矽氧烷之烯基的莫耳比較佳為0.5~2。 The addition reaction type polyoxymethylene is hardened by an addition reaction of a crosslinking point of a main agent and a crosslinking agent. Further, in terms of the more excellent heat resistance derived from the crosslinked structure, the molar ratio of the hydrogen atom of the organohydrogenpolyoxyalkylene bonded to the hydrogen atom of the halogen atom relative to the alkenyl group of the organic alkenyl polyoxyalkylene is further compared. Good for 0.5~2.

於硬化性聚矽氧組合物層所含有之硬化性聚矽氧為加成反應型聚矽氧之情形時,硬化性聚矽氧組合物層亦可進而含有觸媒(尤其是鉑族金屬系觸媒)、或反應抑制劑。 In the case where the curable polyfluorene oxide contained in the layer of the curable polydecane oxide composition is an addition reaction type polyoxane, the layer of the curable polyoxynium composition may further contain a catalyst (especially a platinum group metal system). Catalyst), or a reaction inhibitor.

鉑族金屬系觸媒(矽氫化用鉑族金屬觸媒)係用以進行、促進上述有機烯基聚矽氧烷中之烯基、與上述有機氫聚矽氧烷中之氫原子之矽氫化反應之觸媒。作為鉑族金屬系觸媒,可列舉:鉑系、鈀系、銠系等觸媒,就經濟性、反應性之方面而言,尤佳為使用鉑系觸媒。 A platinum group metal catalyst (a platinum group metal catalyst for hydrogenation) is used to carry out and promote the hydrogenation of an alkenyl group in the above organic alkenyl polyoxyalkylene and a hydrogen atom in the above organic hydrogen polyoxyalkylene. Catalyst for reaction. Examples of the platinum group-based catalyst include platinum-based, palladium-based, and lanthanide-based catalysts. In terms of economy and reactivity, it is particularly preferable to use a platinum-based catalyst.

反應抑制劑(矽氫化用反應抑制劑)係抑制上述觸媒(尤其是鉑族金屬系觸媒)於常溫下之觸媒活性,而使硬化性聚矽氧組合物之使用壽命變長之所謂適用期延長劑(亦稱為延遲劑)。作為反應抑制劑,例如可列舉:各種有機氮化合物、有機磷化合物、乙炔系化合物、肟化合物、有機氯化合物等。尤佳為乙炔系化合物(例如乙炔醇類及乙炔醇之矽烷化物)。 The reaction inhibitor (reaction inhibitor for hydrazine hydrogenation) suppresses the catalytic activity of the above-mentioned catalyst (especially a platinum group metal catalyst) at normal temperature, and the life of the hardenable polyfluorene composition becomes long. Applicable period extender (also known as retarder). Examples of the reaction inhibitor include various organic nitrogen compounds, organic phosphorus compounds, acetylene compounds, hydrazine compounds, and organic chlorine compounds. It is especially preferred to be an acetylene compound (for example, a decyl alcohol and a decyl alcohol of an acetylene alcohol).

於支持基板上形成硬化性聚矽氧組合物層之方法並無特別限制,可採用公知之方法。例如可列舉:將上述之包含硬化性聚矽氧之硬化性聚矽氧組合物塗佈於支持基板上之方法。再者,進行塗佈之方 法並無特別限制,可採用公知之方法。例如作為塗佈方法,可列舉:噴塗法、模具塗佈法、旋轉塗佈法、浸漬塗佈法、輥塗法、棒式塗佈法、網版印刷法、凹版塗佈法等。可自上述方法中,視硬化性聚矽氧組合物之種類而適當進行選擇。 The method of forming the layer of the curable polyoxynitride composition on the support substrate is not particularly limited, and a known method can be employed. For example, a method of applying the above-described curable polyfluorene-containing curable polydecane oxide composition to a support substrate can be mentioned. Furthermore, the side to be coated The method is not particularly limited, and a known method can be employed. Examples of the coating method include a spray coating method, a die coating method, a spin coating method, a dip coating method, a roll coating method, a bar coating method, a screen printing method, and a gravure coating method. From the above methods, it can be appropriately selected depending on the kind of the curable polysiloxane composition.

於硬化性聚矽氧組合物中,亦可視需要而包含溶劑。溶劑較佳為可容易地使各種成分溶解,且可容易地被揮發去除者。具體而言,例如可列示:乙酸丁酯、庚烷、2-庚酮、1-甲氧基-2-丙醇乙酸酯、甲苯、二甲苯、THF(Tetrahydrofuran,四氫呋喃)、氯仿等。其中,較佳為飽和烴,可自各種飽和烴(直鏈狀飽和烴、支鏈狀飽和烴、脂環式飽和烴)之1種或2種以上使用成為實際之各種飽和烴溶劑。例如可列舉:Isopar G(Exxon Mobil有限公司製造)、Isopar L(Exxon Mobil有限公司製造)、Isopar H(Exxon Mobil有限公司製造)、Isopar M(Exxon Mobil有限公司製造)、NORPAR 13(Exxon Mobil有限公司製造)、NORPAR 15(Exxon Mobil有限公司製造)、Exxsol D40(Exxon Mobil有限公司製造)、Exxsol D60(Exxon Mobil有限公司製造)、Exxsol D80(Exxon Mobil有限公司製造)、Neothiosol(中央化成股份有限公司製造)、IP Solvent 2028(出光興產股份有限公司製造)。 In the curable polyoxynoxy composition, a solvent may also be included as needed. The solvent is preferably one which can easily dissolve various components and can be easily removed by volatilization. Specifically, for example, butyl acetate, heptane, 2-heptanone, 1-methoxy-2-propanol acetate, toluene, xylene, THF (Tetrahydrofuran, tetrahydrofuran), chloroform or the like can be listed. In particular, a saturated hydrocarbon is used, and one or two or more kinds of various saturated hydrocarbons (linear saturated hydrocarbons, branched saturated hydrocarbons, and alicyclic saturated hydrocarbons) can be used as practical various saturated hydrocarbon solvents. For example, Isopar G (manufactured by Exxon Mobil Co., Ltd.), Isopar L (manufactured by Exxon Mobil Co., Ltd.), Isopar H (manufactured by Exxon Mobil Co., Ltd.), Isopar M (manufactured by Exxon Mobil Co., Ltd.), NORPAR 13 (Exxon Mobil Co., Ltd.) Made by the company), NORPAR 15 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D40 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D60 (manufactured by Exxon Mobil Co., Ltd.), Exxsol D80 (manufactured by Exxon Mobil Co., Ltd.), Neothiosol (Centralized Chemicals Co., Ltd.) Made by the company), IP Solvent 2028 (manufactured by Idemitsu Kosan Co., Ltd.).

其中,就於如下述般以2個階段實施步驟S102之情形時於第1加熱階段溶劑容易揮發之方面而言,較佳為使用初餾點(大氣壓下)為210℃以下之溶劑。 In the case where the step S102 is carried out in two stages as described below, it is preferred to use a solvent having an initial boiling point (at atmospheric pressure) of 210 ° C or less from the viewpoint that the solvent is easily volatilized in the first heating stage.

再者,硬化性聚矽氧組合物層之厚度並無特別限制,以可獲得下述之具有較佳厚度之聚矽氧樹脂層之方式適當進行調整。 Further, the thickness of the layer of the curable polydecane oxide composition is not particularly limited, and may be appropriately adjusted so as to obtain a polyoxynitride resin layer having a preferable thickness as described below.

(步驟之順序) (order of steps)

於本步驟S102中,以複數個支持銷,將附硬化性層之支持基板自支持基板之第2主面側進行支持而實施加熱處理。即,一面以支持銷支持附硬化性層之支持基板一面進行加熱。更具體而言,如圖3所 示般於支持台50上所間隔配置之複數個支持銷52之頂端(頂部)上配置附硬化性層之支持基板14,於該狀態下對附硬化性層之支持基板14實施加熱處理。再者,支持銷52係如圖3所示般支持附硬化性層之支持基板14中之支持基板10之第2主面10a。 In the step S102, the support substrate with the curable layer is supported by the second main surface side of the support substrate by a plurality of support pins, and the heat treatment is performed. That is, heating is performed while supporting the support substrate with the curable layer on the support pin. More specifically, as shown in Figure 3. The support substrate 14 with the curable layer is disposed on the top (top) of the plurality of support pins 52 arranged at intervals on the support table 50. In this state, the support substrate 14 with the curable layer is subjected to heat treatment. Further, the support pin 52 supports the second main surface 10a of the support substrate 10 in the support substrate 14 with the curable layer as shown in FIG.

於圖3中僅圖示3根支持銷52,但支持銷之數量並無特別限定,亦可為10根以上。又,支持銷52之配置位置並無特別限制,可隔著特定之間隔進行配置,亦可隨機配置。進而,支持銷52之形狀並無特別限制,亦可為圓柱狀、多角形狀等中之任一形狀。 Only three support pins 52 are illustrated in FIG. 3, but the number of support pins is not particularly limited, and may be 10 or more. Further, the arrangement position of the support pins 52 is not particularly limited, and may be arranged at a specific interval or may be randomly arranged. Further, the shape of the support pin 52 is not particularly limited, and may be any of a columnar shape, a polygonal shape, and the like.

再者,如圖3所示般,支持銷52係與支持基板10之第2主面10a側之一部分接觸,因此於支持基板10之第2主面10a側存在未與支持銷52接觸之區域。 Further, as shown in FIG. 3, the support pin 52 is partially in contact with one of the second main surface 10a sides of the support substrate 10, so that there is an area on the second main surface 10a side of the support substrate 10 that is not in contact with the support pin 52. .

對附硬化性層之支持基板實施加熱處理之方法只要可於以上述支持銷支持附硬化性層之支持基板之狀態下進行加熱,則無特別限制,例如可使用於加熱室內設置有支持銷之烘箱等公知之加熱處理裝置。更具體而言,可列舉:使用包含加熱板之加熱處理裝置之方法(例如,於在配置於支持銷上之附硬化性層之支持基板中之硬化性聚矽氧組合物層之上部設置有加熱板之加熱處理裝置內進行加熱之方法)。 The method of heat-treating the support substrate with the hardenable layer is not particularly limited as long as it can be heated in a state in which the support substrate of the hardenable layer is supported by the support pin, and for example, a support pin can be provided in the heating chamber. A known heat treatment device such as an oven. More specifically, a method of using a heat treatment apparatus including a heating plate (for example, a layer of a hardening polysiloxane composition layer in a support substrate provided with a curable layer on a support pin) is provided. A method of heating in a heating treatment device of a heating plate).

使硬化性聚矽氧組合物層熱硬化之加熱條件係視所使用之硬化性聚矽氧之種類而適當選擇最佳之條件。其中,就硬化性聚矽氧之硬化速度及所形成之聚矽氧樹脂層之耐熱性等方面而言,較佳為於150~300℃(較佳為180~250℃)下進行10~120分鐘(較佳為30~60分鐘)加熱處理。 The heating conditions for thermally hardening the curable polyoxynitride composition layer are appropriately selected depending on the type of the curable polyfluorene oxide to be used. Among them, in terms of the hardening rate of the hardening polyoxygen oxide and the heat resistance of the formed polyoxynoxy resin layer, it is preferably carried out at 150 to 300 ° C (preferably 180 to 250 ° C) for 10 to 120 Heat treatment in minutes (preferably 30 to 60 minutes).

作為本步驟S102之較佳態樣,較佳為於不同之溫度條件下以2個階段實施加熱處理之態樣。即,更佳為包含:於第1溫度下實施加熱處理之步驟、與於較第1溫度高之第2溫度下實施加熱處理之步驟。藉 由以2個階段實施加熱處理,從而所形成之聚矽氧樹脂層16之表面面狀更優異,而與下述之玻璃基板20之密接性更為提高。再者,於以2個階段實施加熱處理之情形時,亦可利用不同之加熱處理裝置實施第1加熱步驟與第2加熱步驟。 As a preferred aspect of the present step S102, it is preferred to carry out the heat treatment in two stages under different temperature conditions. That is, it is more preferable to include a step of performing heat treatment at the first temperature and a step of performing heat treatment at a second temperature higher than the first temperature. borrow When the heat treatment is performed in two stages, the surface of the polyoxyxene resin layer 16 formed is more excellent in surface area, and the adhesion to the glass substrate 20 to be described later is further improved. Further, when the heat treatment is performed in two stages, the first heating step and the second heating step may be performed by using different heat treatment apparatuses.

再者,於附硬化性層之支持基板係藉由將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於支持基板上而形成之情形時,就溶劑之去除性更優異而硬化性聚矽氧組合物層之表面變得平坦,並且更為抑制硬化性聚矽氧之分解之方面而言,第1溫度較佳為溶劑之初餾點-30℃~溶劑之初餾點+30℃之範圍內。換言之,第1溫度較佳為滿足以下之關係式。 In addition, when the support substrate having the curable layer is formed by applying a curable polyadenine composition containing a curable polyfluorene oxide and a solvent to a support substrate, the solvent is more excellent in removability. While the surface of the layer of the curable polydecane oxide composition is flat and the decomposition of the hardenable polyfluorene is further inhibited, the first temperature is preferably from the initial boiling point of the solvent to -30 ° C to the initial distillation of the solvent. Point +30 ° C range. In other words, the first temperature preferably satisfies the following relational expression.

式 溶劑之初餾點-30℃≦第1溫度≦溶劑之初餾點+30℃ The initial boiling point of the solvent is -30 ° C ≦ the first temperature ≦ the initial boiling point of the solvent + 30 ° C

再者,所謂溶劑之初餾點,意指依據JIS K0066(1992)而測得之值。JIS K0066(1992)之內容係作為參照而併入本文中。 Further, the initial boiling point of the solvent means a value measured in accordance with JIS K0066 (1992). The contents of JIS K0066 (1992) are incorporated herein by reference.

上述第1溫度與第2溫度之差並無特別限制,較佳為10℃以上,更佳為30℃以上。上限並無特別限制,通常較佳為100℃以下,更佳為70℃以下。 The difference between the first temperature and the second temperature is not particularly limited, but is preferably 10 ° C or higher, and more preferably 30 ° C or higher. The upper limit is not particularly limited, but is usually preferably 100 ° C or lower, more preferably 70 ° C or lower.

又,第1溫度較佳為210℃以下。即,較佳為包含:於210℃以下實施加熱處理之第1加熱步驟、與於超過210℃之溫度下實施加熱處理之第2加熱步驟。若為210℃以下,則更為抑制溶劑之爆沸或聚矽氧樹脂之揮發,從而所形成之聚矽氧樹脂層16之表面面狀更優異。以下,針對上述溫度條件下之上述第1加熱步驟及上述第2加熱步驟進行詳述。 Further, the first temperature is preferably 210 ° C or lower. That is, it is preferable to include a first heating step of performing heat treatment at 210 ° C or lower and a second heating step of performing heat treatment at a temperature exceeding 210 ° C. When it is 210 ° C or less, the boiling of the solvent or the volatilization of the polyoxymethylene resin is further suppressed, and the surface of the formed polyoxynitride resin layer 16 is more excellent. Hereinafter, the first heating step and the second heating step under the above temperature conditions will be described in detail.

第1加熱步驟係所謂預烘烤步驟,主要將殘留於硬化性聚矽氧組合物層12中之溶劑等揮發成分去除,而防止於下述之第2加熱步驟中溶劑爆沸。第1加熱步驟之溫度條件較佳為210℃以下,就聚矽氧樹脂層16之表面面狀更優異之方面而言,更佳為150~210℃。加熱時間係 根據所使用之材料而適當選擇最佳之條件,就生產性及溶劑之去除性之方面而言,較佳為1~5分鐘,更佳為2~3分鐘。 The first heating step is a so-called pre-baking step, and mainly removes volatile components such as a solvent remaining in the curable polyfluorinated composition layer 12 to prevent solvent boiling in the second heating step described below. The temperature condition of the first heating step is preferably 210 ° C or less, and more preferably 150 to 210 ° C in terms of the surface of the polyoxynphthene resin layer 16 being more excellent. Heating time The optimum conditions are appropriately selected depending on the materials to be used, and in terms of productivity and solvent removal, it is preferably from 1 to 5 minutes, more preferably from 2 to 3 minutes.

第2加熱步驟係所謂後烘烤步驟,主要促進硬化性聚矽氧組合物層12之硬化而形成聚矽氧樹脂層16。第2加熱步驟之溫度條件較佳為超過210℃,就硬化性聚矽氧組合物層12之溶劑去除及硬化反應更優異之方面而言,更佳為超過210℃且為250℃以下。加熱時間係根據所使用之材料而適當選擇最佳之條件,就生產性及溶劑之去除性之方面而言,較佳為10~120分鐘,更佳為30~60分鐘。 The second heating step is a so-called post-baking step which mainly promotes the hardening of the curable polyoxynitride composition layer 12 to form the polyoxynoxy resin layer 16. The temperature condition of the second heating step is preferably more than 210 ° C, and more preferably more than 210 ° C and not more than 250 ° C in terms of more excellent solvent removal and hardening reaction of the curable polyoxynitride composition layer 12 . The heating time is appropriately selected depending on the materials to be used, and is preferably from 10 to 120 minutes, more preferably from 30 to 60 minutes, in terms of productivity and solvent removal.

經過本步驟S102而形成之聚矽氧樹脂層16係藉由於支持基板10上實施硬化性聚矽氧組合物層12之硬化反應而被固定於支持基板10之單面上,又,以可剝離之方式與下述之玻璃基板20進行密接。聚矽氧樹脂層16係防止玻璃基板20之錯位直至進行將玻璃基板20與支持基板10進行分離之操作,並且防止由於分離操作而容易地自玻璃基板20剝離,玻璃基板20等由於分離操作而破損。又,聚矽氧樹脂層16係被固定於支持基板10,於分離操作中未使聚矽氧樹脂層16與支持基板10剝離,可藉由分離操作而獲得附樹脂層之支持基板18。 The polyoxynoxy resin layer 16 formed in the step S102 is fixed to one surface of the support substrate 10 by the hardening reaction of the curable polyoxynitride composition layer 12 on the support substrate 10, and is also peelable. The method is in close contact with the glass substrate 20 described below. The polyoxygenated resin layer 16 prevents the misalignment of the glass substrate 20 until the operation of separating the glass substrate 20 from the support substrate 10 is performed, and is prevented from being easily peeled off from the glass substrate 20 due to the separation operation, and the glass substrate 20 or the like is separated by the operation. damaged. Further, the polyoxyxene resin layer 16 is fixed to the support substrate 10, and the polyoxynitride resin layer 16 is not peeled off from the support substrate 10 during the separation operation, and the support substrate 18 with the resin layer can be obtained by a separation operation.

聚矽氧樹脂層16之與玻璃基板20接觸之表面係以可剝離之方式密接於玻璃基板20之第1主面。本發明中,將該聚矽氧樹脂層16表面之可容易剝離之性質稱為易剝離性(剝離性)。 The surface of the polyoxyxene resin layer 16 that is in contact with the glass substrate 20 is detachably adhered to the first main surface of the glass substrate 20. In the present invention, the property of easily peeling off the surface of the polyoxyalkylene resin layer 16 is referred to as easy peelability (peelability).

於本發明中,對於上述固定與可剝離之密接而言,剝離強度(即,剝離所需要之應力)存在差異,固定意指相對於密接,剝離強度較大。又,所謂可剝離之密接,亦意指於可剝離之同時,於不產生所固定之面之剝離之情況下可剝離。具體而言,於本發明之玻璃積層體中,進行將玻璃基板20與支持基板10進行分離之操作之情形時,意指於密接之面剝離,於固定之面未剝離之情況。因此,於玻璃積層體中,若進行將玻璃基板20與支持基板10進行分離之操作,則玻璃積層 體被分成玻璃基板20與附樹脂層之支持基板18兩者。 In the present invention, there is a difference in peel strength (i.e., stress required for peeling) in the above-mentioned fixation and peelable adhesion, and fixing means that the peel strength is large with respect to the adhesion. Further, the term "peelable" means that it can be peeled off and peeled off without causing peeling of the surface to be fixed. Specifically, in the case where the glass substrate 20 and the support substrate 10 are separated from each other in the glass laminate of the present invention, it means that the surface to be adhered is peeled off, and the surface to be fixed is not peeled off. Therefore, in the glass laminate, if the operation of separating the glass substrate 20 from the support substrate 10 is performed, the glass laminate The body is divided into both the glass substrate 20 and the support substrate 18 with the resin layer.

即,聚矽氧樹脂層16對支持基板10之第1主面之結合力相對高於聚矽氧樹脂層16對玻璃基板20之第1主面的結合力。 That is, the bonding strength of the polyoxyxylene resin layer 16 to the first main surface of the support substrate 10 is relatively higher than the bonding strength of the polyoxynoxy resin layer 16 to the first main surface of the glass substrate 20.

聚矽氧樹脂層16之厚度並無特別限定,較佳為2~100μm,更佳為3~50μm,進而較佳為7~20μm。若聚矽氧樹脂層16之厚度為上述範圍,則即便於聚矽氧樹脂層16與玻璃基板20之間存在氣泡或異物,亦可抑制玻璃基板20之變形缺陷之產生。又,若聚矽氧樹脂層16之厚度過厚,則有因形成需要時間及材料,故而不經濟,且耐熱性降低之情形。又,若聚矽氧樹脂層16之厚度過薄,則有聚矽氧樹脂層16與玻璃基板20之密接性降低之情形。 The thickness of the polyoxyxene resin layer 16 is not particularly limited, but is preferably 2 to 100 μm, more preferably 3 to 50 μm, still more preferably 7 to 20 μm. When the thickness of the polyoxyxene resin layer 16 is in the above range, even if air bubbles or foreign matter are present between the polyoxynoxy resin layer 16 and the glass substrate 20, the occurrence of deformation defects of the glass substrate 20 can be suppressed. Further, when the thickness of the polyoxyxene resin layer 16 is too thick, it takes time and material to form, which is uneconomical and the heat resistance is lowered. Further, when the thickness of the polyoxyxene resin layer 16 is too small, the adhesion between the polyoxynated resin layer 16 and the glass substrate 20 may be lowered.

<積層步驟> <Lamination step>

積層步驟S104係如下步驟,即於上述步驟S102中所獲得之聚矽氧樹脂層16之表面上積層玻璃基板20,而獲得依序包含支持基板10、聚矽氧樹脂層16、及玻璃基板20之玻璃積層體100。更具體而言,如圖2(C)所示般,以聚矽氧樹脂層16之與支持基板10側相反側之表面16a、與具有第1主面20a及第2主面20b之玻璃基板20之第1主面20a為積層面,將聚矽氧樹脂層16與玻璃基板20進行積層,而獲得玻璃積層體100。再者,如下所述,所獲得之玻璃積層體100係實施下述之表面處理步驟S106前之處理前玻璃積層體,而推測於玻璃積層體100之支持基板10之與聚矽氧樹脂層16側相反側之表面(支持基板10之第2主面10a)附著有聚矽氧樹脂或其原料。 The laminating step S104 is a step of laminating the glass substrate 20 on the surface of the polyoxynated resin layer 16 obtained in the above step S102, thereby obtaining the support substrate 10, the polyoxyxene resin layer 16, and the glass substrate 20 in this order. The glass laminate 100. More specifically, as shown in FIG. 2(C), the surface 16a of the polyoxynitride resin layer 16 on the side opposite to the support substrate 10 side and the glass substrate having the first main surface 20a and the second main surface 20b are formed. The first main surface 20a of 20 is an accumulation layer, and the polyoxy-oxygen resin layer 16 and the glass substrate 20 are laminated to obtain a glass laminate 100. Further, as described below, the obtained glass laminate 100 is subjected to the pre-treatment glass laminate before the surface treatment step S106 described below, and is presumed to be the polyoxyxene resin layer 16 of the support substrate 10 of the glass laminate 100. The surface of the opposite side (the second main surface 10a of the support substrate 10) is adhered with a polyoxyxylene resin or a raw material thereof.

針對所使用之玻璃基板20,於下文進行詳述。 The glass substrate 20 to be used will be described in detail below.

將玻璃基板20積層於聚矽氧樹脂層16上之方法並無特別限制,可採用公知之方法。 The method of laminating the glass substrate 20 on the polyoxynoxy resin layer 16 is not particularly limited, and a known method can be employed.

例如可列舉於常壓環境下於聚矽氧樹脂層16之表面上重疊玻璃基板20之方法。再者,亦可視需要,於聚矽氧樹脂層16之表面上重疊 玻璃基板20後,使用輥或加壓而使玻璃基板20壓接於聚矽氧樹脂層16。藉由利用輥或加壓之壓接,而相對容易去除混入聚矽氧樹脂層16與玻璃基板20之間之氣泡,故而較佳。 For example, a method of laminating the glass substrate 20 on the surface of the polyoxyxene resin layer 16 under a normal pressure environment can be mentioned. Furthermore, it is also possible to overlap on the surface of the polyoxyxene resin layer 16 as needed. After the glass substrate 20, the glass substrate 20 is pressure-bonded to the polyoxyalkylene resin layer 16 using a roll or pressurization. It is preferable to remove bubbles which are mixed between the polyoxynoxy resin layer 16 and the glass substrate 20 by pressure bonding by a roll or pressurization.

若藉由真空層壓法或真空加壓法而將聚矽氧樹脂層16與玻璃基板20進行壓接,則抑制氣泡之混入或確保良好之密接,故而更佳。亦有如下優點,即藉由於真空下進行壓接,即便於殘留有微小之氣泡之情形時,亦無由於加熱而氣泡成長之情況,而難以導致玻璃基板20之變形缺陷。 When the polyoxyxylene resin layer 16 and the glass substrate 20 are pressure-bonded by a vacuum lamination method or a vacuum press method, it is more preferable to suppress the incorporation of air bubbles or to ensure good adhesion. There is also an advantage that, by pressure bonding under vacuum, even when minute bubbles remain, there is no case where bubbles grow due to heating, and deformation defects of the glass substrate 20 are hard to occur.

於積層玻璃基板20時,較佳為將與聚矽氧樹脂層16接觸之玻璃基板20之表面充分洗淨,而於潔淨度較高之環境下進行積層。潔淨度越高,玻璃基板20之平坦性變得越良好,故而較佳。 In the case of laminating the glass substrate 20, it is preferable to sufficiently wash the surface of the glass substrate 20 which is in contact with the polyoxynoxy resin layer 16, and to laminate it in an environment having a high degree of cleanliness. The higher the degree of cleanliness, the better the flatness of the glass substrate 20 becomes, which is preferable.

再者,積層玻璃基板20後,亦可視需要而進行預退火處理(加熱處理)。藉由進行該預退火處理,從而積層之玻璃基板20之對聚矽氧樹脂層16之密接性提高,可成為適當之剝離強度,而於下述之構件形成步驟時變得難以產生電子裝置用構件之錯位等,而電子裝置之生產性提高。 Further, after the laminated glass substrate 20 is laminated, a pre-annealing treatment (heat treatment) may be performed as needed. By performing the pre-annealing treatment, the adhesion of the laminated glass substrate 20 to the polyoxynoxy resin layer 16 is improved, and the peel strength can be suitably obtained, and it becomes difficult to produce an electronic device in the member forming step described below. The dislocation of the components, etc., and the productivity of the electronic device is improved.

預退火處理之條件係視所使用之聚矽氧樹脂層16之種類而適當選擇最佳之條件,就使玻璃基板20與聚矽氧樹脂層16之間之剝離強度變得更適當之方面而言,較佳為於300℃以上(較佳為300~400℃)之溫度下進行5分鐘以上(較佳為5~30分鐘)加熱處理。 The conditions of the pre-annealing treatment are appropriately selected according to the kind of the polyoxyxene resin layer 16 to be used, and the peeling strength between the glass substrate 20 and the polyoxyxene resin layer 16 is made more appropriate. In other words, it is preferred to carry out heat treatment at a temperature of 300 ° C or higher (preferably 300 to 400 ° C) for 5 minutes or longer (preferably 5 to 30 minutes).

(玻璃基板) (glass substrate)

玻璃基板20係其第1主面20a與聚矽氧樹脂層16接觸,且於其與聚矽氧樹脂層16側相反側之第2主面20b設置有電子裝置用構件。 In the glass substrate 20, the first main surface 20a is in contact with the polyoxynitride resin layer 16, and the second main surface 20b on the side opposite to the polyoxynitride resin layer 16 side is provided with an electronic device member.

玻璃基板20之種類可為通常者,例如可列舉LCD(liquid crystal display,液晶顯示裝置)、OLED(Organic Light-Emitting Diode,有機發光二極體)等顯示裝置用之玻璃基板等。玻璃基板20之耐化學品 性、耐透濕性優異,且熱收縮率較低。作為熱收縮率之指標,可使用JIS R 3102(1995年修正)所規定之線膨脹係數。JIS R 3102(1995年修正)之內容係作為參照被併入本文中。 The type of the glass substrate 20 may be a normal one, and examples thereof include a glass substrate for a display device such as an LCD (liquid crystal display) or an OLED (Organic Light-Emitting Diode). Chemical resistance of glass substrate 20 Excellent in properties and moisture permeability, and low in heat shrinkage. As an index of the heat shrinkage rate, the linear expansion coefficient prescribed in JIS R 3102 (1995 Revision) can be used. The contents of JIS R 3102 (amended in 1995) are incorporated herein by reference.

若玻璃基板20之線膨脹係數較大,則因下述之構件形成步驟大多伴隨著加熱處理,故容易產生各種問題。例如於玻璃基板20上形成薄膜電晶體(TFT)之情形時,有如下之虞:若於加熱下將形成有TFT之玻璃基板20進行冷卻,則由於玻璃基板20之熱收縮而導致TFT之錯位變得過大。 When the linear expansion coefficient of the glass substrate 20 is large, since the member forming step described below is often accompanied by heat treatment, various problems are likely to occur. For example, when a thin film transistor (TFT) is formed on the glass substrate 20, there is a case where the glass substrate 20 on which the TFT is formed is cooled under heating, and the TFT is displaced due to heat shrinkage of the glass substrate 20. Become too big.

玻璃基板20係使玻璃原料熔融並將熔融玻璃成形為板狀而獲得。此種成形方法可為通常者,例如可使用浮式法、熔融法、流孔下引法、富可法、魯伯法等。又,尤其是厚度較薄之玻璃基板20可利用將暫時成形為板狀之玻璃加熱至可成形之溫度,利用延伸等方法進行拉伸而使玻璃變薄之方法(再曳引法)進行成形而獲得。 The glass substrate 20 is obtained by melting a glass raw material and shaping the molten glass into a plate shape. Such a molding method may be a usual one, and for example, a float method, a melting method, a flow down method, a rich method, a Luber method, or the like may be used. Further, in particular, the glass substrate 20 having a small thickness can be formed by heating a glass which is temporarily formed into a plate shape to a temperature at which it can be formed, and stretching by a method such as stretching to thin the glass (re-drawing method). And get.

玻璃基板20之玻璃之種類並無特別限定,較佳為無鹼硼矽酸玻璃、硼矽酸玻璃、鈉鈣玻璃、高二氧化矽玻璃、其他以氧化矽為主要成分之氧化物系玻璃。作為氧化物系玻璃,較佳為利用氧化物換算之氧化矽之含量為40~90質量%之玻璃。 The type of the glass of the glass substrate 20 is not particularly limited, and is preferably an alkali-free borosilicate glass, a borosilicate glass, a soda lime glass, a high cerium oxide glass, or another oxide-based glass containing cerium oxide as a main component. The oxide-based glass is preferably a glass having a content of cerium oxide in an amount of 40 to 90% by mass in terms of oxide.

作為玻璃基板20之玻璃,係採用適合電子裝置用構件之種類或其製造步驟之玻璃。例如液晶面板用之玻璃基板因鹼金屬成分之溶出容易對液晶產生影響,故由實質上不含有鹼金屬成分之玻璃(無鹼玻璃)(其中,包括通常鹼土金屬成分)構成。如上所述,玻璃基板20之玻璃係基於所適用之裝置之種類及其製造步驟而適當選擇。 As the glass of the glass substrate 20, a glass suitable for the type of the member for an electronic device or a manufacturing step thereof is used. For example, a glass substrate for a liquid crystal panel is likely to have an influence on liquid crystals due to elution of an alkali metal component, and therefore is composed of glass (alkali-free glass) containing substantially no alkali metal component (including a normal alkaline earth metal component). As described above, the glass of the glass substrate 20 is appropriately selected depending on the type of the apparatus to be applied and the manufacturing steps thereof.

關於玻璃基板20之厚度,就玻璃基板20之薄型化及/或輕量化之觀點而言,較佳為0.3mm以下,更佳為0.15mm以下,進而較佳為0.10mm以下。於玻璃基板20之厚度為0.3mm以下之情形時,可向玻璃基板20賦予良好之可撓性。於玻璃基板20之厚度為0.15mm以下之 情形時,可將玻璃基板20捲取成輥狀。 The thickness of the glass substrate 20 is preferably 0.3 mm or less, more preferably 0.15 mm or less, and still more preferably 0.10 mm or less from the viewpoint of thickness reduction and/or weight reduction of the glass substrate 20. When the thickness of the glass substrate 20 is 0.3 mm or less, the glass substrate 20 can be provided with good flexibility. The thickness of the glass substrate 20 is 0.15 mm or less. In this case, the glass substrate 20 can be wound into a roll shape.

又,就玻璃基板20之製造容易,及玻璃基板20之操作容易等理由而言,玻璃基板20之厚度較佳為0.03mm以上。 Moreover, the thickness of the glass substrate 20 is preferably 0.03 mm or more for the reason that the production of the glass substrate 20 is easy and the operation of the glass substrate 20 is easy.

再者,玻璃基板20亦可包含2層以上,於該情形時,形成各層之材料可為同種材料,亦可為異種材料。又,於該情形時,「玻璃基板20之厚度」意指全部層之合計之厚度。 Further, the glass substrate 20 may include two or more layers. In this case, the material forming each layer may be the same material or a different material. Moreover, in this case, "the thickness of the glass substrate 20" means the total thickness of all layers.

(玻璃積層體) (glass laminate)

玻璃積層體100係具有支持基板10、玻璃基板20及存在於該等之間之聚矽氧樹脂層16之積層體。聚矽氧樹脂層16係其一面與支持基板10之第1主面接觸,並且其另一面與玻璃基板20之第1主面20a接觸。 The glass laminate 100 has a laminate of the support substrate 10, the glass substrate 20, and the polyoxynoxy resin layer 16 present between the layers. The polyoxyxene resin layer 16 is in contact with the first main surface of the support substrate 10 on one surface thereof, and the other surface thereof is in contact with the first main surface 20a of the glass substrate 20.

該玻璃積層體100係被使用至下述之構件形成步驟。即,該玻璃積層體100係被使用至於其玻璃基板20之第2主面20b表面上形成有液晶顯示裝置等電子裝置用構件為止。其後,形成有電子裝置用構件之玻璃積層體被分離為附樹脂層之支持基板18與電子裝置,附樹脂層之支持基板18不會成為構成電子裝置之部分。可於附樹脂層之支持基板18積層新的玻璃基板20而作為新的玻璃積層體100進行再利用。 This glass laminate 100 is used in the member forming step described below. In other words, the glass laminate 100 is used until a member for an electronic device such as a liquid crystal display device is formed on the surface of the second main surface 20b of the glass substrate 20. Thereafter, the glass laminate in which the member for electronic device is formed is separated into the support substrate 18 with the resin layer and the electronic device, and the support substrate 18 with the resin layer does not become a part constituting the electronic device. A new glass substrate 20 can be laminated on the support substrate 18 with the resin layer to be reused as a new glass laminate 100.

支持基板10與聚矽氧樹脂層16之界面具有剝離強度(x),若向支持基板10與聚矽氧樹脂層16之界面施加超過剝離強度(x)之剝離方向之應力,則於支持基板10與聚矽氧樹脂層16之界面產生剝離。聚矽氧樹脂層16與玻璃基板20之界面具有剝離強度(y),若向聚矽氧樹脂層16與玻璃基板20之界面施加超過剝離強度(y)之剝離方向之應力,則於聚矽氧樹脂層16與玻璃基板20之界面產生剝離。 The interface between the support substrate 10 and the polyoxyxene resin layer 16 has a peel strength (x), and when a stress exceeding the peeling strength (x) in the peeling direction is applied to the interface between the support substrate 10 and the polyoxyxene resin layer 16, the support substrate is applied to the support substrate. Peeling occurs at the interface between the layer 10 and the polyoxyxene resin layer 16. The interface between the polyoxyxene resin layer 16 and the glass substrate 20 has a peeling strength (y). When a stress exceeding the peeling strength (y) in the peeling direction is applied to the interface between the polyoxynoxy resin layer 16 and the glass substrate 20, Peeling occurs at the interface between the oxygen resin layer 16 and the glass substrate 20.

如上所述,於玻璃積層體100(亦意指下述之附電子裝置用構件之積層體)中,上述剝離強度(x)大於(高於)上述剝離強度(y)。因此,若向玻璃積層體100施加將支持基板10與玻璃基板20進行剝離之方向之應力,則玻璃積層體100係於聚矽氧樹脂層16與玻璃基板20之界面產 生剝離而分離為玻璃基板20與附樹脂層之支持基板18。 As described above, in the glass laminate 100 (also referred to as a laminate of the member for electronic devices described below), the peel strength (x) is greater than (higher than) the peel strength (y). Therefore, when a stress in a direction in which the support substrate 10 and the glass substrate 20 are peeled off is applied to the glass laminate 100, the glass laminate 100 is produced at the interface between the polyimide resin layer 16 and the glass substrate 20. The glass substrate 20 and the support substrate 18 with the resin layer are separated by peeling.

即,聚矽氧樹脂層16係被固定於支持基板10上而形成附樹脂層之支持基板18,玻璃基板20以可剝離之方式密接於聚矽氧樹脂層16上。 That is, the polyoxyxene resin layer 16 is fixed to the support substrate 10 to form a support substrate 18 with a resin layer, and the glass substrate 20 is detachably adhered to the polyoxynoxy resin layer 16.

剝離強度(x)較佳為充分高於剝離強度(y)。提高剝離強度(x)意指可提高聚矽氧樹脂層16對支持基板10之附著力,且可維持於加熱處理後對玻璃基板20之相對較高之附著力。 The peel strength (x) is preferably sufficiently higher than the peel strength (y). Increasing the peel strength (x) means that the adhesion of the silicone resin layer 16 to the support substrate 10 can be improved, and the relatively high adhesion to the glass substrate 20 after the heat treatment can be maintained.

聚矽氧樹脂層16對支持基板10之附著力之提高係藉由如下方式達成,即如上述般使硬化性聚矽氧組合物層12於支持基板10上進行交聯硬化而形成聚矽氧樹脂層16。可利用交聯硬化時之接著力形成以較高之結合力結合於支持基板10之聚矽氧樹脂層16。 The improvement of the adhesion of the polyoxyxene resin layer 16 to the support substrate 10 is achieved by forming the curable polyoxyxene composition layer 12 on the support substrate 10 to form a polyfluorinated oxygen as described above. Resin layer 16. The polyoxynitride resin layer 16 bonded to the support substrate 10 with a high bonding force can be formed by the adhesion force at the time of cross-linking hardening.

另一方面,硬化性聚矽氧組合物層12之硬化物對玻璃基板20之結合力通常低於上述交聯硬化時所產生之結合力。 On the other hand, the bonding strength of the cured product of the curable polyoxynitride composition layer 12 to the glass substrate 20 is generally lower than that at the time of crosslinking hardening described above.

玻璃積層體100可用於各種用途,例如可列舉:製造下述之顯示裝置用面板、PV、薄膜2次電池、表面形成有電路之半導體晶圓等電子零件之用途等。再者,於該用途中,玻璃積層體100大多被暴露於高溫條件(例如360℃以上)下(例如1小時以上)。 The glass laminate 100 can be used for various purposes, and examples thereof include the use of a panel for a display device, a PV, a film secondary battery, and an electronic component such as a semiconductor wafer on which a circuit is formed. Further, in this application, the glass laminate 100 is often exposed to high temperature conditions (for example, 360 ° C or higher) (for example, 1 hour or longer).

此處,所謂顯示裝置用面板,包括LCD、OLED、電子紙、電漿顯示器面板、場發射面板、量子點LED面板、MEMS(Micro Electro Mechanical Systems,微電子機械系統)快門面板等。 Here, the panel for a display device includes an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems) shutter panel, and the like.

<表面處理步驟> <surface treatment step>

表面處理步驟S106係如下步驟,即針對至少支持基板之第2主面(與有聚矽氧樹脂層之側相反側之面)實施選自由電暈處理、電漿處理、及UV臭氧處理所組成之群中之至少1種處理。於第1態樣中,刻意地對上述中所形成之玻璃積層體中之支持基板之第2主面實施上述處理。更具體而言,對圖2(C)之支持基板10之第2主面10a實施上述處 理。藉由實施本步驟S106,而將於上述加熱步驟S102時揮發而附著於支持基板10之第2主面10a之聚矽氧樹脂或其原料成分等去除,而使支持基板10之第2主面10a潔淨化。即,藉由對上述積層步驟S104中所獲得之玻璃積層體實施上述處理,而可獲得經過處理之玻璃積層體。再者,亦可如下述般,於本步驟S106中,對玻璃積層體中之支持基板之第2主面、與玻璃積層體中之玻璃基板之露出表面一併實施上述處理。 The surface treatment step S106 is a step of performing a treatment selected from the group consisting of corona treatment, plasma treatment, and UV ozone treatment on at least the second main surface of the support substrate (the surface opposite to the side having the polyoxynitride resin layer). At least one of the groups. In the first aspect, the above-described treatment is intentionally performed on the second main surface of the support substrate in the glass laminate formed above. More specifically, the above is performed on the second main surface 10a of the support substrate 10 of FIG. 2(C) Reason. By performing this step S106, the polyoxyxylene resin which is volatilized at the heating step S102 and adhered to the second main surface 10a of the support substrate 10 or a raw material component thereof is removed, and the second main surface of the support substrate 10 is removed. 10a is clean. That is, by performing the above-described treatment on the glass laminate obtained in the above-mentioned lamination step S104, a treated glass laminate can be obtained. Further, in the step S106 described above, the above-described treatment may be performed together with the second main surface of the support substrate in the glass laminate and the exposed surface of the glass substrate in the glass laminate.

作為本步驟S106中所實施之電暈處理(電暈洗淨),係實施公知之電暈處理。再者,所謂電暈處理,係藉由電暈放電照射而使塑膠膜、紙、及金屬箔等處理基材之表面改質之表面處理技術。若自高頻電源裝置將振盪之高頻.高電壓施加於高壓電極與接地電極之間,則產生電暈放電。 As the corona treatment (corona cleaning) performed in this step S106, a known corona treatment is performed. Further, the corona treatment is a surface treatment technique in which the surface of a treated substrate such as a plastic film, paper, or metal foil is modified by corona discharge irradiation. If the high frequency power supply device will oscillate at high frequencies. A high voltage is applied between the high voltage electrode and the ground electrode to generate a corona discharge.

電暈處理之方法並無特別限制,例如較佳為如下方法,即向支持玻璃積層體之搬送輥、與與其對向設置之電極之間施加高電壓而進行電暈放電,並在此期間使玻璃積層體依序移動而進行表面處理。作為具體之電暈處理用裝置,可列舉:包含高頻電源(高頻振盪機)、高壓變壓器、及放電電極,且於其前後安裝有搬送玻璃積層體之搬送機之裝置。高頻振盪機之頻率並無特別限制,例如較佳為0.1~100kHz,較佳為最大輸出0.5~50kW左右者。玻璃積層體之搬送速度(處理速度)並無特別限制,較佳為1~10m/min。 The method of the corona treatment is not particularly limited. For example, it is preferable to apply a high voltage to a transfer roller supporting the glass laminate and a counter electrode disposed therebetween, and to perform corona discharge during this period. The glass laminate is sequentially moved to perform surface treatment. Specific examples of the corona treatment device include a high-frequency power source (high-frequency oscillator), a high-voltage transformer, and a discharge electrode, and a device for transporting a glass laminate is attached to the front and rear sides thereof. The frequency of the high-frequency oscillator is not particularly limited, and is, for example, preferably 0.1 to 100 kHz, preferably about 0.5 to 50 kW. The conveying speed (treatment speed) of the glass laminate is not particularly limited, but is preferably 1 to 10 m/min.

再者,於積層步驟S104後實施表面處理步驟S106之情形時,較佳為使用以下所說明之電暈處理裝置。 Further, in the case where the surface treatment step S106 is performed after the step S104, it is preferable to use the corona treatment device described below.

圖4係表示電暈處理裝置之一實施形態之側視圖。電暈處理裝置60至少包含:第1高壓電極62、第1接地電極64、第2高壓電極66、及第2接地電極68。第1高壓電極62與第1接地電極64係隔著特定間隔對向配置而構成第1電極對70,且於該等第1高壓電極62與第1接地電極 64之間形成有放電空間。又,第2高壓電極66與第2接地電極68係隔著特定間隔對向配置而構成第2電極對72,且於該等第2高壓電極66與第2接地電極68之間形成有放電空間。第1電極對70與第2電極對72係如圖4所示般,沿著將積層步驟S104中所獲得之依序具有支持基板、聚矽氧樹脂層及玻璃基板之玻璃積層體X進行搬送之方向鄰接配置。進而,如圖4所示般,玻璃積層體X係藉由搬送輥74進行搬送,且於第1高壓電極62與第1接地電極64之間、及第2高壓電極66與第2接地電極68之間移行。 Fig. 4 is a side view showing an embodiment of a corona treatment device. The corona treatment device 60 includes at least a first high voltage electrode 62, a first ground electrode 64, a second high voltage electrode 66, and a second ground electrode 68. The first high voltage electrode 62 and the first ground electrode 64 are arranged to face each other with a predetermined interval therebetween, and the first electrode pair 70 is formed, and the first high voltage electrode 62 and the first ground electrode are formed. A discharge space is formed between 64. Further, the second high voltage electrode 66 and the second ground electrode 68 are disposed to face each other with a predetermined interval therebetween to form the second electrode pair 72, and a discharge space is formed between the second high voltage electrode 66 and the second ground electrode 68. . As shown in FIG. 4, the first electrode pair 70 and the second electrode pair 72 are transported along the glass laminate X having the support substrate, the polyoxyn resin layer, and the glass substrate obtained in the step S104. The direction is adjacent to the configuration. Further, as shown in FIG. 4, the glass laminate X is transported by the transport roller 74, and between the first high voltage electrode 62 and the first ground electrode 64, and between the second high voltage electrode 66 and the second ground electrode 68. Move between.

又,第1高壓電極62係與第1高頻電源76連接而被施加高頻電壓。又,第2高壓電極66係與第2高頻電源78連接而被施加高頻電壓。再者,於圖4中,使用有第1高頻電源76與第2高頻電源78兩者,但並不限定於該態樣,第1高頻電源76與第2高頻電源78亦可使用(共用)同一電源。 Further, the first high voltage electrode 62 is connected to the first high frequency power source 76 to apply a high frequency voltage. Further, the second high voltage electrode 66 is connected to the second high frequency power source 78 to apply a high frequency voltage. Further, in FIG. 4, both the first high-frequency power source 76 and the second high-frequency power source 78 are used. However, the first high-frequency power source 76 and the second high-frequency power source 78 may be used. Use (share) the same power source.

進而,第1高壓電極62與第2高壓電極66係分別配置於圖4中之隔著搬送玻璃積層體X之路徑(搬送路徑)之上側(一側)與下側(另一側)。換言之,第1高壓電極62與第2高壓電極66係沿著玻璃積層體X之搬送方向交錯配置。 Further, the first high voltage electrode 62 and the second high voltage electrode 66 are disposed on the upper side (one side) and the lower side (the other side) of the path (transport path) through which the glass laminated body X is conveyed in FIG. 4 . In other words, the first high voltage electrode 62 and the second high voltage electrode 66 are alternately arranged along the transport direction of the glass laminate X.

若使用搬送輥74將玻璃積層體X向上述電暈處理裝置60進行搬送,則因第1高壓電極62與第2高壓電極66被分別配置於玻璃積層體X之搬送路徑之一側及另一側,故而可有效率地對所搬送之玻璃積層體X之兩面進行電暈處理。即,可對玻璃積層體X中之支持基板之第2主面(與聚矽氧樹脂層側相反側之面)、及玻璃基板之露出表面(與聚矽氧樹脂層側相反側之面)實施電暈處理。 When the glass laminate X is transported to the corona treatment apparatus 60 by the transport roller 74, the first high voltage electrode 62 and the second high voltage electrode 66 are disposed on one side of the transport path of the glass laminate X and the other. On the side, it is possible to efficiently corona treat both sides of the glass laminate X to be conveyed. In other words, the second main surface of the support substrate in the glass laminate X (the surface opposite to the side of the polyoxymethylene resin layer) and the exposed surface of the glass substrate (the surface opposite to the side of the polyoxymethylene resin layer) can be used. Corona treatment is implemented.

再者,高頻電源之條件、或玻璃積層體X之搬送速度(處理速度)之條件之較佳範圍係如上所述。 Further, the preferable range of the conditions of the high-frequency power source or the conveying speed (processing speed) of the glass laminate X is as described above.

又,於圖4中,第1高壓電極62被配置於圖式中之上側,第2高壓 電極66被配置於圖式中之下側,但並不限定於該態樣,上述位置關係亦可反轉。 Further, in FIG. 4, the first high voltage electrode 62 is disposed on the upper side in the drawing, and the second high voltage The electrode 66 is disposed on the lower side in the drawing, but is not limited to this aspect, and the above positional relationship may be reversed.

又,於欲僅對玻璃積層體X之單側面(支持基板之第2主面)強力地實施電暈處理之情形時,亦可將第1高壓電極62及第2高壓電極66一起配置於圖式中之上側、或下側。 Further, when it is desired to strongly perform the corona treatment on only one side surface of the glass laminate X (the second main surface of the support substrate), the first high voltage electrode 62 and the second high voltage electrode 66 may be arranged together. The upper side or the lower side of the formula.

進而,於圖4中,記載有包含第1電極對70與第2電極對72兩者之電暈處理裝置,但電極對之數量並不限定於該態樣。 Further, in FIG. 4, a corona treatment device including both the first electrode pair 70 and the second electrode pair 72 is described, but the number of electrode pairs is not limited to this.

作為第1高壓電極62、第2高壓電極66、第1接地電極64、及第2接地電極68,可使用金屬電極、或被介電體被覆之電極,但為了穩定地進行用以電暈處理之放電,較佳為對向配置之第1高壓電極62及第1接地電極64之至少1者、及對向配置之第2高壓電極66及第2接地電極68之至少1者被介電體被覆。更佳為第1高壓電極62及第1接地電極64兩者、以及第2高壓電極66及第2接地電極68兩者被介電體覆蓋。藉此,可擴大高壓電極與接地電極間之間隔,而變得容易穩定地搬送玻璃積層體X。 As the first high voltage electrode 62, the second high voltage electrode 66, the first ground electrode 64, and the second ground electrode 68, a metal electrode or an electrode covered with a dielectric can be used, but in order to stably perform corona treatment Preferably, at least one of the first high voltage electrode 62 and the first ground electrode 64 disposed oppositely, and at least one of the second high voltage electrode 66 and the second ground electrode 68 disposed opposite each other are dielectric bodies. Covered. More preferably, both the first high voltage electrode 62 and the first ground electrode 64 and the second high voltage electrode 66 and the second ground electrode 68 are covered with a dielectric. Thereby, the distance between the high voltage electrode and the ground electrode can be increased, and the glass laminate X can be easily conveyed stably.

再者,作為被介電體被覆之電極(介電體被覆電極),較佳為於不鏽鋼或鋁等金屬等導電性之芯材之表面塗佈陶瓷等而成之陶瓷電極。通常於對樹脂膜進行電暈處理之情形時等,可使用於金屬芯材塗佈橡膠材而成之橡膠電極作為介電體被覆電極,但由於重量與剛性之關係而直徑較粗,因此有如下情況,即電暈處理裝置60大型化,搬送輥間有空隙而於搬送較薄之玻璃積層體X時產生問題。陶瓷電極輕量且剛性較高,因此直徑小於橡膠電極,故而難以產生上述問題。 In addition, as the electrode (dielectric coated electrode) covered with the dielectric material, a ceramic electrode obtained by coating ceramic or the like on the surface of a conductive core material such as a metal such as stainless steel or aluminum is preferable. Usually, when a resin film is subjected to corona treatment, a rubber electrode obtained by coating a rubber material for a metal core material can be used as a dielectric coating electrode, but the diameter is relatively large due to the relationship between weight and rigidity. In the case where the corona treatment apparatus 60 is increased in size, there is a gap between the conveyance rollers, which causes a problem when the thin glass laminate X is conveyed. Since the ceramic electrode is light in weight and high in rigidity, the diameter is smaller than that of the rubber electrode, so that it is difficult to cause the above problem.

又,對於橡膠電極而言,由於放電而橡膠覆膜容易損傷,故而難以固定電極並使用。因此,於橡膠電極上設置有轉動機構,通常一面轉動一面使用,但有裝置複雜且大型化之問題。關於陶瓷電極,即便於相同位置反覆進行放電亦難以損傷,因此無需設置上述之轉動機 構。 Further, in the rubber electrode, since the rubber film is easily damaged by the discharge, it is difficult to fix the electrode and use it. Therefore, a rotation mechanism is provided on the rubber electrode, and it is usually used while rotating, but there is a problem that the device is complicated and large. Regarding the ceramic electrode, it is difficult to damage even if the discharge is repeated at the same position, so it is not necessary to provide the above-described rotating machine. Structure.

電漿處理(電漿洗淨)有大氣壓(或常壓)電漿處理、及低壓低溫電漿處理。 The plasma treatment (plasma washing) has atmospheric pressure (or atmospheric pressure) plasma treatment and low pressure low temperature plasma treatment.

於常壓電漿處理中,向氣體施加放電能量,於常壓下進行游離而使電漿產生。作為其特徵,可列舉:因常壓製程故無需設為真空,且設備簡單,生產性亦較高。作為方式,主要有稀有氣體系常壓電漿、與控制施加電壓而進行輝光放電之脈衝方式常壓電漿,可使用上述方式中之任一種。 In the normal piezoelectric slurry treatment, discharge energy is applied to the gas, and it is released under normal pressure to generate plasma. As a feature thereof, it is not necessary to use a vacuum because of a normal pressing process, and the apparatus is simple and the productivity is also high. As a mode, there are mainly a normal gas slurry of a rare gas system and a pulse type normal piezoelectric slurry which performs a glow discharge by applying a voltage, and any of the above methods can be used.

於低壓低溫電漿處理中,使玻璃積層體通過可減壓之低溫電漿處理裝置內,使裝置內成為無機氣體之氛圍,於將壓力保持為0.001~10Torr、較佳為0.01~1Torr之狀態下向電極間施加頻率50Hz~13.6MHz之電力。藉由施加0.1~50kW之電力而進行輝光放電,而使無機氣體之低溫電漿產生。於其中設置玻璃積層體而對支持基板進行處理。於連續對玻璃積層體進行處理之情形時,一面使玻璃積層體依序移動一面對表面進行電漿處理。作為該無機氣體,可使用氦氣、氖氣、氬氣等稀有氣體、及氧氣、氮氣、空氣、二氧化碳氣體、氨氣等。該等氣體並不限於1種,亦可為2種以上氣體之混合物。 In the low-pressure low-temperature plasma treatment, the glass laminate is passed through a decompressible low-temperature plasma processing apparatus to make the inside of the apparatus an inorganic gas atmosphere, and the pressure is maintained at 0.001 to 10 Torr, preferably 0.01 to 1 Torr. A power of 50 Hz to 13.6 MHz is applied between the lower electrodes. Glow discharge is performed by applying electric power of 0.1 to 50 kW, and low temperature plasma of inorganic gas is generated. A glass laminate is provided therein to process the support substrate. In the case where the glass laminate is continuously treated, the glass laminate is sequentially moved to face the surface for plasma treatment. As the inorganic gas, a rare gas such as helium, neon or argon, oxygen, nitrogen, air, carbon dioxide gas, ammonia or the like can be used. These gases are not limited to one type, and may be a mixture of two or more kinds of gases.

於常壓電漿處理及低壓低溫電漿處理中之任一種處理中,電漿處理時間較佳為0.1~1,000秒,更佳為1~100秒。 In any of the treatments of the normal piezoelectric slurry treatment and the low pressure low temperature plasma treatment, the plasma treatment time is preferably from 0.1 to 1,000 seconds, more preferably from 1 to 100 seconds.

所謂UV臭氧處理,係照射UV(紫外線),使空氣中之氧變為臭氧,藉由該臭氧及紫外線而使被照射面潔淨化之處理。 The UV ozone treatment is a treatment in which UV (ultraviolet light) is irradiated to make oxygen in the air into ozone, and the irradiated surface is cleaned by the ozone and ultraviolet rays.

UV光源只要可藉由UV照射而使氧變為臭氧,則無特別限制。作為UV光源,可列舉低壓水銀燈。低壓水銀燈產生185nm與254nm之UV光,185nm線可使氧變為臭氧。照射時之照度係根據所使用之光源而不同,通常使用數十~數百mW/cm2者。又,亦可藉由集光或擴散而變更照度。照射時間係根據燈之照度及未處理層之種類而不同, 通常為1分鐘~24小時。處理溫度通常為10~200℃。又,UV之照射量(即,紫外線量)通常為1mJ/cm2以上,較佳為1~100000mJ/cm2,更佳為10~100000mJ/cm2The UV light source is not particularly limited as long as it can turn oxygen into ozone by UV irradiation. As the UV light source, a low pressure mercury lamp can be cited. The low pressure mercury lamp produces UV light at 185 nm and 254 nm, and the 185 nm line converts oxygen into ozone. The illuminance at the time of irradiation differs depending on the light source used, and is usually tens to hundreds of mW/cm 2 . Further, the illuminance can be changed by collecting or diffusing. The irradiation time varies depending on the illuminance of the lamp and the type of the untreated layer, and is usually from 1 minute to 24 hours. The treatment temperature is usually 10 to 200 °C. Further, the UV irradiation amount (i.e., an amount of ultraviolet rays) is generally 1mJ / cm 2 or more, preferably 1 ~ 100000mJ / cm 2, more preferably 10 ~ 100000mJ / cm 2.

藉由實施上述步驟S106,而將附著於支持基板10之第2主面10a側之附著物去除。 By performing the above-described step S106, the adhering matter adhering to the second main surface 10a side of the support substrate 10 is removed.

於上述步驟S106之處理前後之支持基板10之第2主面10a之水接觸角的差(處理前之水接觸角-處理後之水接觸角)較佳為30度以上,更佳為50度以上。上限並無特別限制,通常為70度以下。 The difference in water contact angle (water contact angle before treatment - water contact angle after treatment) of the second main surface 10a of the support substrate 10 before and after the above-described step S106 is preferably 30 degrees or more, more preferably 50 degrees. the above. The upper limit is not particularly limited and is usually 70 degrees or less.

<<第2態樣>> <<The second aspect>>

圖5係表示本發明之玻璃積層體之製造方法之第2態樣中的製造步驟之流程圖。如圖5所示般,第2態樣依序包含:加熱步驟S102、表面處理步驟S106、及積層步驟S104。 Fig. 5 is a flow chart showing the manufacturing steps in the second aspect of the method for producing a glass laminate according to the present invention. As shown in FIG. 5, the second aspect includes, in order, a heating step S102, a surface processing step S106, and a lamination step S104.

與上述之第1態樣相比,除表面處理步驟S106之實施順序不同以外,係與上述之第1態樣之各步驟與其處理之方法相同。更具體而言,於第2態樣中,於加熱步驟S102中製造附樹脂層之支持基板,繼而對該附樹脂層之支持基板中之支持基板之第2主面側實施上述之表面處理(例如,電暈處理),其後,於附樹脂層之支持基板中之聚矽氧樹脂層上積層玻璃基板而獲得玻璃積層體。於本實施態樣中亦可獲得所需之玻璃積層體。 The steps of the first aspect described above are the same as those of the first aspect except that the order of the surface treatment step S106 is different from that of the first aspect described above. More specifically, in the second aspect, the support substrate with the resin layer is produced in the heating step S102, and then the surface treatment is performed on the second main surface side of the support substrate in the support substrate with the resin layer ( For example, corona treatment), thereafter, a glass substrate is laminated on the polyoxynitride resin layer in the support substrate with the resin layer to obtain a glass laminate. The desired glass laminate can also be obtained in this embodiment.

再者,若將上述之第1態樣與第2態樣進行比較,則較佳為第1態樣。於第1態樣之情形時,因於形成聚矽氧樹脂層後且於表面處理步驟S106前積層玻璃基板,故而雜質難以附著於聚矽氧樹脂層上,而玻璃基板之密接性更優異。 Further, when the first aspect is compared with the second aspect, the first aspect is preferable. In the case of the first aspect, since the glass substrate is laminated before the surface treatment step S106 after the formation of the polyoxynoxy resin layer, impurities are less likely to adhere to the polyoxymethylene resin layer, and the adhesion of the glass substrate is further improved.

使用於上述之第1態樣及第2態樣中所獲得之玻璃積層體,而製造電子裝置(包含玻璃基板與電子裝置用構件之附構件之玻璃基板)。又,視需要,對玻璃積層體之玻璃基板實施研磨處理。 An electronic device (a glass substrate including a glass substrate and an attached member of the member for an electronic device) is produced by using the glass laminate obtained in the first aspect and the second aspect described above. Further, the glass substrate of the glass laminate is subjected to a polishing treatment as needed.

以下,對該等研磨步驟、及電子裝置製造步驟(構件形成步驟及分離步驟)之程序進行詳述。 Hereinafter, the procedures of the polishing step and the electronic device manufacturing step (member forming step and separation step) will be described in detail.

<研磨步驟> <grinding step>

研磨步驟係對所獲得之玻璃積層體100中之玻璃基板20之第2主面20b進行研磨之步驟。藉由設置本步驟,可將玻璃基板20之第2主面20b之微小之凹凸及損傷去除,而使供形成電子裝置用構件之面之平坦性提高。因此,可提高作為製品之電子裝置之可靠性。該效果對本發明中所使用之厚度為0.3mm以下之玻璃基板明顯。其原因在於:厚度0.3mm以下之玻璃基板難以單獨地進行研磨,從而難以於用於玻璃積層體100之製作前預先進行研磨。 The polishing step is a step of polishing the second main surface 20b of the glass substrate 20 in the obtained glass laminate 100. By providing this step, minute irregularities and damage of the second main surface 20b of the glass substrate 20 can be removed, and the flatness of the surface for forming the electronic device member can be improved. Therefore, the reliability of the electronic device as a product can be improved. This effect is remarkable for the glass substrate having a thickness of 0.3 mm or less used in the present invention. This is because the glass substrate having a thickness of 0.3 mm or less is difficult to be polished separately, and it is difficult to perform polishing before the production of the glass laminate 100.

研磨之方法並無特別限制,可採用公知之方法,可使用機械研磨(物理研磨)或化學性研磨(化學研磨)。作為機械研磨,可使用吹送陶瓷研磨粒而進行研磨之噴砂方法、使用研磨片或磨石之研磨、及併用研磨粒與化學溶劑之化學機械研磨(CMP:Chemical Mechanical Polishing)法等。 The method of grinding is not particularly limited, and a known method can be employed, and mechanical polishing (physical polishing) or chemical polishing (chemical polishing) can be used. As the mechanical polishing, a sandblasting method in which ceramic abrasive grains are blown and a polishing method, a polishing using a polishing sheet or a grindstone, and a chemical mechanical polishing (CMP) method in which abrasive grains and a chemical solvent are used in combination can be used.

又,作為化學研磨(亦有稱為濕式蝕刻之情況),可使用如下方法,即使用藥液對玻璃基板之表面進行研磨。 Further, as chemical polishing (also referred to as wet etching), a method of polishing the surface of a glass substrate using a chemical liquid can be used.

其中,就研磨後之玻璃基板20之第2主面20b之平坦性及潔淨度更高之方面而言,較佳為化學機械研磨。再者,作為化學機械研磨所使用之研磨粒,可使用氧化鈰等公知之研磨粒。 Among them, chemical mechanical polishing is preferred in terms of higher flatness and cleanliness of the second main surface 20b of the polished glass substrate 20. Further, as the abrasive grains used for chemical mechanical polishing, known abrasive grains such as cerium oxide can be used.

<電子裝置(附構件之玻璃基板)及其製造方法> <Electronic device (glass substrate with attached members) and method of manufacturing the same>

本發明中,使用上述之玻璃積層體而製造包含玻璃基板與電子裝置用構件之電子裝置(附構件之玻璃基板)。 In the present invention, an electronic device (a glass substrate with a member) including a glass substrate and a member for an electronic device is produced by using the above-described glass laminate.

該電子裝置之製造方法並無特別限定,就電子裝置之生產性優異之方面而言,較佳為如下方法,即於上述玻璃積層體中之玻璃基板上形成電子裝置用構件而製造附電子裝置用構件之積層體,以聚矽氧 樹脂層之玻璃基板側界面為剝離面,自所獲得之附電子裝置用構件之積層體分離為電子裝置與附樹脂層之支持基板。 The method of manufacturing the electronic device is not particularly limited, and in terms of excellent productivity of the electronic device, it is preferable to form an electronic device by forming a member for an electronic device on a glass substrate in the glass laminate. Multilayered oxygen The glass substrate side interface of the resin layer is a peeling surface, and is separated into a supporting substrate of an electronic device and a resin-attached layer from the laminated body of the obtained electronic device member.

以下,將於上述玻璃積層體中之玻璃基板上形成電子裝置用構件而製造附電子裝置用構件之積層體的步驟稱為構件形成步驟,將以聚矽氧樹脂層之玻璃基板側界面為剝離面,自附電子裝置用構件之積層體分離為電子裝置與附樹脂層之支持基板之步驟稱為分離步驟。 In the following, a step of forming a laminate for a member for an electronic device on a glass substrate in the glass laminate is referred to as a member forming step, and the glass substrate side interface of the polyoxyxene resin layer is peeled off. The step of separating the laminated body of the member for electronic device into the supporting substrate of the electronic device and the resin-attached layer is referred to as a separating step.

以下,針對各步驟中所使用之材料及程序進行詳述。 Hereinafter, the materials and procedures used in the respective steps will be described in detail.

(構件形成步驟) (component forming step)

構件形成步驟係於上述積層步驟中所獲得之玻璃積層體100中之玻璃基板20上形成電子裝置用構件之步驟。更具體而言,如圖6(A)所示般於玻璃基板20之第2主面20b(露出表面)上形成電子裝置用構件22而獲得附電子裝置用構件之積層體24。 The member forming step is a step of forming a member for an electronic device on the glass substrate 20 in the glass laminate 100 obtained in the above laminating step. More specifically, as shown in FIG. 6(A), the electronic device member 22 is formed on the second main surface 20b (exposed surface) of the glass substrate 20, and the laminated body 24 for the electronic device is obtained.

首先,針對本步驟中所使用之電子裝置用構件22進行詳述,其後對步驟之程序進行詳述。 First, the electronic device member 22 used in this step will be described in detail, and the procedure of the step will be described in detail later.

(電子裝置用構件(功能性元件)) (Mechanical components (functional components))

電子裝置用構件22係形成於玻璃積層體100中之玻璃基板20上,且係構成電子裝置之至少一部分之構件。更具體而言,作為電子裝置用構件22,可列舉顯示裝置用面板、太陽電池、薄膜2次電池、或表面形成有電路之半導體晶圓等電子零件等所使用之構件(例如顯示裝置用構件、太陽電池用構件、薄膜2次電池用構件、電子零件用電路)。 The electronic device member 22 is formed on the glass substrate 20 in the glass laminate 100 and is a member constituting at least a part of the electronic device. More specifically, the electronic device member 22 may be a member for use in a display device panel, a solar cell, a thin film secondary battery, or an electronic component such as a semiconductor wafer on which a circuit is formed (for example, a member for a display device) , a member for a solar cell, a member for a film secondary battery, and a circuit for an electronic component).

例如,作為太陽電池用構件,就矽型而言,可列舉正極之氧化錫等透明電極、由p層/i層/n層表示之矽層、及負極之金屬等,除上述以外,亦可列舉對應於化合物型、色素增感型、量子點型等之各種構件等。 For example, as a member for a solar cell, a transparent electrode such as a tin oxide of a positive electrode, a tantalum layer represented by a p layer/i layer/n layer, a metal of a negative electrode, or the like may be used as the member for the solar cell, and the like. Various members and the like corresponding to a compound type, a dye-sensitized type, a quantum dot type, and the like are listed.

又,作為薄膜2次電池用構件,對於鋰離子型而言,可列舉正極 及負極之金屬或金屬氧化物等透明電極、電解質層之鋰化合物、集電層之金屬、作為密封層之樹脂等,除上述以外,亦可列舉對應於鎳氫型、聚合物型、陶瓷電解質型等之各種構件等。 Further, as a member for a film secondary battery, a positive electrode is exemplified for the lithium ion type. And a transparent electrode such as a metal or a metal oxide of a negative electrode, a lithium compound of an electrolyte layer, a metal of a collector layer, a resin as a sealing layer, and the like, in addition to the above, may also be a nickel-hydrogen type, a polymer type, or a ceramic electrolyte. Various types of components, etc.

又,作為電子零件用電路,對於CCD(Charge Coupled Device,電荷耦合元件)或CMOS(Complementary Metal Oxide Semiconductor,互補金氧半導體)而言,可列舉導電部之金屬、絕緣部之氧化矽或氮化矽等,除上述以外,亦可列舉對應於壓力感測器、加速度感測器等各種感測器或剛性印刷基板、軟性印刷基板、剛性軟性印刷基板等之各種構件等。 Further, as a circuit for an electronic component, a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) includes a metal of a conductive portion and yttrium oxide or nitridation of an insulating portion. In addition to the above, various members such as various sensors such as a pressure sensor and an acceleration sensor, or a rigid printed circuit board, a flexible printed circuit board, and a rigid flexible printed circuit board may be used.

(步驟之順序) (order of steps)

上述之附電子裝置用構件之積層體24之製造方法並無特別限定,視電子裝置用構件之構成構件之種類,利用先前公知之方法,於玻璃積層體100之玻璃基板20之第2主面20b上形成電子裝置用構件22。 The manufacturing method of the laminated body 24 of the member for electronic devices described above is not particularly limited, and the second main surface of the glass substrate 20 of the glass laminate 100 is formed by a conventionally known method depending on the type of the constituent members of the electronic device member. A member 22 for an electronic device is formed on 20b.

再者,電子裝置用構件22亦可並非最終形成於玻璃基板20之第2主面20b之構件之全部(以下稱為「全部構件」),而為全部構件之一部分(以下稱為「部分構件」)。亦可將自聚矽氧樹脂層16剝離之附部分構件之玻璃基板於其後之步驟中製成附全部構件之玻璃基板(相當於下述之電子裝置)。 In addition, the electronic device member 22 may not be the entire member (hereinafter referred to as "all members") of the second main surface 20b of the glass substrate 20, and may be one part of all members (hereinafter referred to as "partial member" "). The glass substrate with the member attached to the polyoxyxene resin layer 16 may be formed into a glass substrate (corresponding to an electronic device described below) with all the members in the subsequent step.

又,對於自聚矽氧樹脂層16剝離之附全部構件之玻璃基板而言,亦可於其剝離面(第1主面20a)形成其他電子裝置用構件。又,亦可將附全部構件之積層體組合,其後自附全部構件之積層體將附樹脂層之支持基板18剝離而製造電子裝置。進而,亦可使用2片附全部構件之積層體而組裝電子裝置,其後自附全部構件之積層體將2片附樹脂層之支持基板18剝離,而製造具有2片玻璃基板之電子裝置。 Moreover, the glass substrate with all the members which are peeled off from the polyoxynoxy resin layer 16 may be formed with other electronic device members on the peeling surface (first main surface 20a). Moreover, the laminated body with all the members may be combined, and thereafter, the laminated body with the resin layer may be peeled off from the laminated body of all the members to manufacture an electronic device. Further, an electronic device can be assembled by using two laminated bodies with all the members, and then the laminated body with the resin layers removed from the laminated body of all the members, and an electronic device having two glass substrates can be manufactured.

例如,若以製造OLED之情形為例,則為了於玻璃積層體100之 玻璃基板20之與聚矽氧樹脂層16側相反側之表面上(相當於玻璃基板20之第2主面20b)形成有機EL構造體,而進行如下各種層形成或處理,即形成透明電極;進而於形成有透明電極之面上蒸鍍電洞注入層.電洞傳輸層.發光層.電子傳輸層等;形成背面電極;及使用密封板進行密封等。作為該等層形成或處理,具體而言,例如可列舉:成膜處理、蒸鍍處理、密封板之接著處理等。 For example, if the case of manufacturing an OLED is taken as an example, for the glass laminate 100 An organic EL structure is formed on a surface of the glass substrate 20 opposite to the side of the polyoxyxene resin layer 16 (corresponding to the second main surface 20b of the glass substrate 20), and various layers are formed or processed to form a transparent electrode; Further, a hole injection layer is deposited on the surface on which the transparent electrode is formed. Hole transport layer. Luminous layer. An electron transport layer or the like; a back electrode; and a sealing plate for sealing or the like. Specific examples of the formation or treatment of the layers include a film formation treatment, a vapor deposition treatment, and a subsequent treatment of a sealing plate.

又,例如於製造TFT-LCD之情形時,該製造方法具有TFT形成步驟、CF形成步驟、及貼合步驟等各種步驟,上述TFT形成步驟係於玻璃積層體100之玻璃基板20之第2主面20b上,使用抗蝕液,於藉由CVD(Chemical vapor deposition,化學氣相沈積)法及濺鍍法等通常之成膜法而形成之金屬膜及金屬氧化膜等進行圖案形成而形成薄膜電晶體(TFT);上述CF形成步驟係於另一玻璃積層體100之玻璃基板20之第2主面20b上,將抗蝕液用於圖案形成而形成彩色濾光片(CF);貼合步驟係將TFT形成步驟中所獲得之附TFT之積層體與CF形成步驟中所獲得之附CF之積層體進行積層。 Further, for example, in the case of manufacturing a TFT-LCD, the manufacturing method has various steps such as a TFT forming step, a CF forming step, and a bonding step, and the TFT forming step is applied to the second main member of the glass substrate 20 of the glass laminate 100. On the surface 20b, a metal film and a metal oxide film formed by a usual film formation method such as a CVD (Chemical Vapor Deposition) method or a sputtering method are used to form a film by using a resist liquid. a TFT (TFT); the CF forming step is performed on the second main surface 20b of the glass substrate 20 of the other glass laminate 100, and the resist liquid is used for pattern formation to form a color filter (CF); In the step, the laminated body of the TFT obtained in the TFT forming step and the laminated body of the CF obtained in the CF forming step are laminated.

於TFT形成步驟或CF形成步驟中,使用周知之光微影技術或蝕刻技術等而於玻璃基板20之第2主面20b形成TFT或CF。此時,可使用抗蝕液作為圖案形成用之塗佈液。 In the TFT forming step or the CF forming step, TFT or CF is formed on the second main surface 20b of the glass substrate 20 by using a known photolithography technique or etching technique. At this time, a resist liquid can be used as the coating liquid for pattern formation.

再者,於形成TFT或CF前,亦可視需要而將玻璃基板20之第2主面20b洗淨。作為洗淨方法,可使用周知之乾式洗淨或濕式洗淨。 Further, before forming the TFT or the CF, the second main surface 20b of the glass substrate 20 may be washed as needed. As the washing method, a dry cleaning or a wet washing which is well known can be used.

於貼合步驟中,使附TFT之積層體之薄膜電晶體形成面、與附CF之積層體之彩色濾光片形成面對向,並使用密封劑(例如,單元形成用紫外線硬化型密封劑)進行貼合。其後,向由附TFT之積層體與附CF之積層體所形成之單元內注入液晶材。作為注入液晶材之方法,例如有減壓注入法、滴加注入法。 In the bonding step, the thin film transistor forming surface of the laminated body with the TFT is formed to face the color filter of the laminated body with CF, and a sealing agent is used (for example, an ultraviolet curing type sealing agent for cell formation) ) to make a fit. Thereafter, a liquid crystal material is injected into a cell formed of a laminate body with TFTs and a laminate body with CF. As a method of injecting a liquid crystal material, for example, a pressure reduction injection method or a dropping injection method is available.

(分離步驟) (separation step)

分離步驟係如圖6(B)所示般,以聚矽氧樹脂層16與玻璃基板20之界面為剝離面,自上述構件形成步驟中所獲得之附電子裝置用構件之積層體24分離為積層有電子裝置用構件22之玻璃基板20(電子裝置)、與附樹脂層之支持基板18,而獲得包含電子裝置用構件22及玻璃基板20之電子裝置26的步驟。 In the separation step, as shown in FIG. 6(B), the interface between the polyoxyxene resin layer 16 and the glass substrate 20 is a peeling surface, and the laminated body 24 of the member for electronic device obtained in the above-described member forming step is separated into The glass substrate 20 (electronic device) of the electronic device member 22 and the support substrate 18 with the resin layer are laminated to obtain the electronic device 26 including the electronic device member 22 and the glass substrate 20.

於剝離時之玻璃基板20上之電子裝置用構件22為必需之全部構成構件之形成之一部分的情形時,亦可於分離後,將剩餘之構成構件形成於玻璃基板20上。 In the case where the electronic device member 22 on the glass substrate 20 at the time of peeling is a part of all necessary constituent members, the remaining constituent members may be formed on the glass substrate 20 after separation.

將玻璃基板20與附樹脂層之支持基板18進行剝離之方法並無特別限定。具體而言,例如可向玻璃基板20與聚矽氧樹脂層16之界面插入銳利之刃具狀者,賦予剝離之起點後,吹送水與壓縮空氣之混合流體而進行剝離。較佳為以附電子裝置用構件之積層體24之支持基板10成為上側,電子裝置用構件22側成為下側之方式設置於壓盤上,將電子裝置用構件22側真空吸附於壓盤上(於兩面積層有支持基板之情形時依序進行),於該狀態下首先使刃具侵入玻璃基板20-聚矽氧樹脂層16界面。然後,其後利用複數個真空吸附墊吸附支持基板10側,自插入刃具處附近開始依序使真空吸附墊上升。藉此於聚矽氧樹脂層16與玻璃基板20之界面或聚矽氧樹脂層16之凝聚破損面形成空氣層,該空氣層擴展至界面或凝聚破損面之整面,而可容易地剝離支持基板10。 The method of peeling the glass substrate 20 and the support substrate 18 with a resin layer is not specifically limited. Specifically, for example, a sharp blade can be inserted into the interface between the glass substrate 20 and the polyoxyxene resin layer 16, and after the origin of the peeling is given, the mixed fluid of water and compressed air is blown and peeled off. It is preferable that the support substrate 10 of the laminated body 24 for the electronic device-attached member is placed on the upper side, the electronic device member 22 side is placed on the pressure plate, and the electronic device member 22 side is vacuum-adsorbed to the pressure plate. (In the case where the two-layer layer has a supporting substrate, it is sequentially performed), and in this state, the blade is first invaded into the interface of the glass substrate 20-polyoxyalkylene resin layer 16. Then, the support substrate 10 side is adsorbed by a plurality of vacuum adsorption pads, and the vacuum adsorption pad is sequentially raised from the vicinity of the insertion blade. Thereby, an air layer is formed at the interface between the polyoxyxene resin layer 16 and the glass substrate 20 or the agglomerated damaged surface of the polyoxyxene resin layer 16, and the air layer spreads to the entire surface of the interface or the agglomerated damaged surface, and can be easily peeled off and supported. Substrate 10.

又,支持基板10可與新的玻璃基板進行積層而製造本發明之玻璃積層體100。 Further, the support substrate 10 can be laminated with a new glass substrate to produce the glass laminate 100 of the present invention.

再者,於自附電子裝置用構件之積層體24分離電子裝置26時,可藉由控制利用離子化器之吹送或濕度,而更為抑制聚矽氧樹脂層16之碎片靜電吸附於電子裝置26之情況。 Further, when the electronic device 26 is separated from the laminated body 24 of the self-contained electronic device member, it is possible to suppress the electrostatic adsorption of the fragments of the polyoxynoxy resin layer 16 to the electronic device by controlling the blowing or humidity by the ionizer. 26 cases.

上述之電子裝置26之製造方法較佳用於如行動電話或PDA(Personal Digital Assistant,個人數位助理)之移動終端所使用之 小型顯示裝置之製造。顯示裝置主要有LCD或OLED,作為LCD,包括TN(Twisted Nematic,扭轉向列)型、STN(Super Twisted Nematic,超扭轉向列)型、FE(Ferroelectric,鐵電)型、TFT(Thin-film transistor,薄膜電晶體)型、MIM(Metal-Insulator-Metal,金屬-絕緣層-金屬)型、IPS(In-Plane Switching,橫向電場效應)型、VA(Vertical Aligned,垂直配向)型等。基本上於被動驅動型、主動驅動型中之任一種顯示裝置之情形時亦可應用。 The manufacturing method of the electronic device 26 described above is preferably used by a mobile terminal such as a mobile phone or a PDA (Personal Digital Assistant). Manufacturing of small display devices. Display devices mainly include LCD or OLED, and as LCD, including TN (Twisted Nematic), STN (Super Twisted Nematic), FE (Ferroelectric), TFT (Thin-film) Transistor, thin film transistor type, MIM (Metal-Insulator-Metal), IPS (In-Plane Switching) type, VA (Vertical Aligned) type, and the like. It can also be applied basically in the case of any of the passive driving type and the active driving type.

作為利用上述方法製造之電子裝置26,可列舉:具有玻璃基板與顯示裝置用構件之顯示裝置用面板、具有玻璃基板與太陽電池用構件之太陽電池、具有玻璃基板與薄膜2次電池用構件之薄膜2次電池、具有玻璃基板與電子裝置用構件之電子零件等。作為顯示裝置用面板,包括液晶面板、有機EL面板、電漿顯示器面板、場發射面板等。 The electronic device 26 manufactured by the above method includes a panel for a display device having a member for a glass substrate and a display device, a solar cell having a member for a glass substrate and a solar cell, and a member for a glass substrate and a secondary battery. A film secondary battery, an electronic component having a glass substrate and a member for an electronic device, and the like. The panel for a display device includes a liquid crystal panel, an organic EL panel, a plasma display panel, a field emission panel, and the like.

[實施例] [Examples]

以下,藉由實施例等而對本發明具體地進行說明,但本發明並不受該等例限定。 Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the examples.

於以下之實施例及比較例中,使用由無鹼硼矽酸玻璃構成之玻璃板(長度880mm、寬度680mm、板厚0.2mm,線膨脹係數38×10-7/℃,旭硝子公司製造,商品名「AN100」)作為玻璃基板。又,作為支持基板,使用相同之由無鹼硼矽酸玻璃構成之玻璃板(長度920mm、寬度730mm、板厚0.5mm,線膨脹係數38×10-7/℃,旭硝子公司製造,商品名「AN100」)。 In the following examples and comparative examples, a glass plate composed of an alkali-free borosilicate glass (length 880 mm, width 680 mm, thickness 0.2 mm, linear expansion coefficient 38×10 -7 /° C., manufactured by Asahi Glass Co., Ltd., was used. The name "AN100" is used as a glass substrate. Further, as the support substrate, the same glass plate (length 920 mm, width 730 mm, plate thickness 0.5 mm, linear expansion coefficient 38×10 -7 /° C., manufactured by Asahi Glass Co., Ltd., trade name) was used. AN100").

<實施例1> <Example 1>

首先,利用鹼性水溶液將支持基板之表面洗淨,之後利用純水進行洗淨而潔淨化。 First, the surface of the support substrate is washed with an alkaline aqueous solution, and then washed with pure water to be cleaned.

繼而,利用模具塗佈機(塗佈速度:40mm/s,吐出量:8ml), 於支持基板之第1主面上塗佈下述之溶液S,將包含未硬化之交聯性有機聚矽氧烷之層(硬化性聚矽氧組合物層)設置於支持基板上,而獲得附硬化性層之支持基板(塗佈量20g/m2)。 Then, using a die coater (coating speed: 40 mm/s, discharge amount: 8 ml), the following solution S was applied to the first main surface of the support substrate to form an unhardened crosslinkable organic polyfluorene. The layer of the oxyalkylene (hardenable polyoxynitride composition layer) was provided on the support substrate to obtain a support substrate (coating amount: 20 g/m 2 ) having a curable layer.

(溶液S) (solution S)

將作為成分(A)之直鏈狀乙烯基甲基聚矽氧烷(Azmax公司製造,商品名「VDT-127」,25℃下之黏度:700-800cP(厘泊),有機聚矽氧烷1mol中之乙烯基之mol%:0.325)、作為成分(B)之直鏈狀甲基氫化聚矽氧烷(Azmax公司製造,商品名「HMS-301」,25℃下之黏度:25-35cP(厘泊),1分子內之鍵結於矽原子之氫原子之數量:8個)以全部乙烯基與鍵結於矽原子之全部氫原子的莫耳比(氫原子/乙烯基)成為0.9之方式進行混合,相對於該矽氧烷混合物100重量份,混合作為成分(C)之下述式(1)所示之具有乙炔系不飽和基之矽化合物(沸點:120℃)1質量份。 Linear linear methyl polysiloxane (component A), manufactured by Azmax Co., Ltd., trade name "VDT-127", viscosity at 25 ° C: 700-800 cP (centipoise), organic polyoxymethane The mol% of the vinyl group in 1 mol: 0.325), the linear methyl hydrogenated polyoxyalkylene as the component (B) (manufactured by Azmax, trade name "HMS-301", viscosity at 25 ° C: 25-35 cP (centipoise), the number of hydrogen atoms bonded to the deuterium atom in one molecule: 8) The molar ratio (hydrogen atom/vinyl group) of all the hydrogen atoms bonded to all the hydrogen atoms of the deuterium atom becomes 0.9. In this manner, 1 part by mass of the oxime compound having an acetylene-based unsaturated group (boiling point: 120 ° C) represented by the following formula (1) as the component (C) is mixed with 100 parts by weight of the mixture of the oxirane. .

HC≡C-C(CH3)2-O-Si(CH3)3 式(1) HC≡CC(CH 3 ) 2 -O-Si(CH 3 ) 3 (1)

繼而,相對於成分(A)與成分(B)與成分(C)之合計量,以鉑換算計鉑金屬濃度成為100ppm之方式添加鉑系觸媒(Shin-Etsu Silicones股份有限公司製造,商品名「CAT-PL-56」)而獲得有機聚矽氧烷組合物之混合液。進而,相對於所獲得之混合液100重量份,添加IP solvent 2028(初餾點:200℃,出光興產製造)150重量份而獲得混合溶液。 Then, a platinum-based catalyst (manufactured by Shin-Etsu Silicones Co., Ltd., trade name) was added to the total amount of the component (A) and the component (B) and the component (C) in a platinum equivalent of platinum. "CAT-PL-56") was obtained as a mixture of organopolyoxane compositions. Furthermore, 150 parts by weight of IP solvent 2028 (initial boiling point: 200 ° C, manufactured by Idemitsu Kosan Co., Ltd.) was added to 100 parts by weight of the obtained mixed liquid to obtain a mixed solution.

繼而,於設置於加熱處理裝置內之底部之複數個支持銷之頂端載置上述附硬化性層之支持基板。再者,支持銷之頂端係與附硬化性層之支持基板中之支持基板之第2主面側(與有硬化性聚矽氧組合物層之側相反側)的表面接觸,且於支持基板之第2主面側存在未與支持銷接觸之區域。 Then, the support substrate with the curable layer is placed on the tip end of a plurality of support pins provided at the bottom of the heat treatment apparatus. Further, the tip end of the support pin is in contact with the surface of the second main surface side (the side opposite to the side having the curable polyoxynitride composition layer) of the support substrate in the support substrate with the curable layer, and is supported on the substrate. There is a region on the second main surface side that is not in contact with the support pin.

於加熱處理裝置內,於附硬化性層之支持基板之硬化性聚矽氧組合物層之上部配置加熱板,藉由該加熱板,於200℃下對附硬化性 層之支持基板加熱(預烘烤加熱)3分鐘。 In the heat treatment apparatus, a heating plate is disposed on the upper portion of the curable polyoxynitride composition layer of the support substrate with the curable layer, and the curing plate is cured at 200 ° C. The support substrate of the layer was heated (prebake heating) for 3 minutes.

繼而,針對上述加熱處理後之附硬化性層之支持基板,進而於250℃下實施1450秒鐘之加熱處理(後烘烤處理),而於支持基板之第1主面形成厚度8μm之聚矽氧樹脂層。 Then, the support substrate having the curable layer after the heat treatment was further subjected to a heat treatment (post-baking treatment) at 250 ° C for 1,450 seconds, and a polyethylene having a thickness of 8 μm was formed on the first main surface of the support substrate. Oxygen resin layer.

其後,於室溫下,藉由大氣壓加壓而將玻璃基板與支持基板上之聚矽氧樹脂層面進行貼合而獲得玻璃積層體A。 Thereafter, the glass substrate and the polyoxymethylene resin layer on the support substrate were bonded together by atmospheric pressure at room temperature to obtain a glass laminate A.

於所獲得之玻璃積層體A中,支持基板與玻璃基板係於與聚矽氧樹脂層之間不產生氣泡之情況下進行密接,沒有變形缺陷,平滑性亦良好。再者,於玻璃積層體A中,聚矽氧樹脂層與支持基板之層之界面之剝離強度大於玻璃基板之層與聚矽氧樹脂層之界面的剝離強度。 In the obtained glass laminate A, the support substrate and the glass substrate were adhered to each other without generating bubbles between the polyoxymethylene resin layer, and there was no deformation defect, and the smoothness was also good. Further, in the glass laminate A, the peel strength at the interface between the layer of the polyimide layer and the layer of the support substrate is larger than the peel strength at the interface between the layer of the glass substrate and the layer of the polyimide resin layer.

繼而,針對所獲得之玻璃積層體A中之支持基板之第2主面,實施電暈處理(電力1kW,處理速度4m/min)。 Then, corona treatment (electric power 1 kW, processing speed 4 m/min) was performed on the second main surface of the support substrate in the obtained glass laminate A.

對玻璃積層體A中之支持基板之第2主面之電暈處理前後的水接觸角進行測定,結果為電暈處理前為70度,電暈處理後為5度。自該等測定結果確認如下情況,即藉由電暈處理,從而附著於支持基板之第2主面側之聚矽氧樹脂被去除。 The water contact angle before and after the corona treatment of the second main surface of the support substrate in the glass laminate A was measured and found to be 70 degrees before the corona treatment and 5 degrees after the corona treatment. From the results of these measurements, it was confirmed that the polyoxyxylene resin adhering to the second main surface side of the support substrate was removed by corona treatment.

(剝離評價) (peeling evaluation)

以實施過電暈處理之玻璃積層體A中之支持基板與胺基甲酸酯製之台墊接觸之方式將該玻璃積層體A載置於台墊上。繼而,將玻璃積層體A以100g/cm2壓接於台墊120秒鐘。壓接後,一面向支持基板與台墊之間吹送空氣與水,一面進行兩者之剝離,結果可剝離。 The glass laminate A was placed on a table mat in such a manner that the support substrate in the glass laminate A subjected to the corona treatment was brought into contact with the urethane-made mat. Then, the glass laminate A was pressure-bonded to the mat at 100 g/cm 2 for 120 seconds. After the pressure bonding, air and water are blown between the support substrate and the table mat, and both are peeled off, and as a result, peeling can be performed.

再者,即便於將電暈處理中之處理速度變更為1m/min、6m/min之情形時,亦可獲得與上述相同之結果。 Further, even when the processing speed in the corona treatment was changed to 1 m/min or 6 m/min, the same results as described above were obtained.

<比較例1> <Comparative Example 1>

不實施電暈處理,除此以外,依據與上述實施例1相同之程序而獲得玻璃積層體B。 The glass laminate B was obtained in the same manner as in the above Example 1 except that the corona treatment was not carried out.

使用玻璃積層體B代替玻璃積層體A而進行上述(剝離評價)時,無法剝離玻璃積層體B。 When the glass laminate B is used instead of the glass laminate A to perform the above (peel evaluation), the glass laminate B cannot be peeled off.

<實施例2> <Example 2>

於本例中,使用實施例1中所獲得之實施過電暈處理之玻璃積層體A而製造OLED。 In this example, an OLED was produced using the corona-treated glass laminate A obtained in Example 1.

首先,於玻璃積層體A之玻璃基板之第2主面上,藉由電漿CVD法而依序將氮化矽、氧化矽、非晶矽成膜。繼而,藉由離子摻雜裝置而將低濃度之硼注入非晶矽層,於氮氣氛圍下進行加熱處理而進行脫氫處理。繼而,藉由雷射退火裝置而進行非晶矽層之結晶化處理。繼而,藉由使用光微影法之蝕刻及離子摻雜裝置,將低濃度之磷注入非晶矽層而形成N型及P型之TFT區域。繼而,於玻璃基板之第2主面側,藉由電漿CVD法將氧化矽膜成膜而形成閘極絕緣膜後,藉由濺鍍法而將鉬成膜,藉由使用光微影法之蝕刻而形成閘極電極。繼而,藉由光微影法與離子摻雜裝置,將高濃度之硼與磷注入N型、P型各自之所需區域而形成源極區域及汲極區域。繼而,於玻璃基板之第2主面側,以利用電漿CVD法之氧化矽之成膜形成層間絕緣膜,且藉由濺鍍法將鋁成膜,及藉由使用光微影法之蝕刻而形成TFT電極。繼而,於氫環境下,進行加熱處理而進行氫化處理後,以利用電漿CVD法之氮化矽之成膜形成鈍化層。繼而,於玻璃基板之第2主面側塗佈紫外線硬化性樹脂,藉由光微影法而形成平坦化層及接觸孔。繼而,藉由濺鍍法將氧化銦錫成膜,藉由使用光微影法之蝕刻而形成像素電極。 First, on the second main surface of the glass substrate of the glass laminate A, tantalum nitride, ruthenium oxide, and amorphous ruthenium are sequentially formed by a plasma CVD method. Then, boron of a low concentration is injected into the amorphous germanium layer by an ion doping apparatus, and heat treatment is performed in a nitrogen atmosphere to carry out dehydrogenation treatment. Then, the crystallization treatment of the amorphous germanium layer is performed by a laser annealing device. Then, by using a photolithography etching and ion doping apparatus, a low concentration of phosphorus is implanted into the amorphous germanium layer to form N-type and P-type TFT regions. Then, on the second main surface side of the glass substrate, a ruthenium oxide film is formed by a plasma CVD method to form a gate insulating film, and then molybdenum is formed by sputtering to form a film by using a photolithography method. The etching is performed to form a gate electrode. Then, by using a photolithography method and an ion doping apparatus, a high concentration of boron and phosphorus is implanted into a desired region of each of the N-type and the P-type to form a source region and a drain region. Then, on the second main surface side of the glass substrate, an interlayer insulating film is formed by film formation of cerium oxide by a plasma CVD method, and aluminum is formed by sputtering, and etching by photolithography is performed. And a TFT electrode is formed. Then, after performing a hydrogenation treatment in a hydrogen atmosphere, a passivation layer is formed by film formation of tantalum nitride by a plasma CVD method. Then, an ultraviolet curable resin is applied to the second main surface side of the glass substrate, and a planarization layer and a contact hole are formed by photolithography. Then, indium tin oxide is formed into a film by sputtering, and a pixel electrode is formed by etching using photolithography.

繼而,於玻璃基板之第2主面側,藉由蒸鍍法,依序將作為電洞注入層之4,4',4"-三(3-甲基苯基苯基胺基)三苯胺、作為電洞傳輸層之雙[(N-萘基)-N-苯基]聯苯胺、作為發光層之於8-羥喹啉鋁錯合物(Alq3)中混合有2,6-雙[4-[N-(4-甲氧基苯基)-N-苯基]胺基苯乙烯基]萘-1,5-二腈(BSN-BCN)40體積%者、及作為電子傳輸層之Alq3成膜。繼 而,藉由濺鍍法將鋁成膜,藉由使用光微影法之蝕刻形成對向電極。繼而,於玻璃基板之第2主面側,隔著紫外線硬化型之接著層而貼合另一片玻璃基板而進行密封。藉由上述程序而於玻璃基板上形成有機EL構造體。玻璃基板上具有有機EL構造體之玻璃積層體A(以下,稱為面板A)為本發明之附電子裝置用構件之積層體。 Then, on the second main surface side of the glass substrate, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine as a hole injection layer was sequentially deposited by a vapor deposition method. , as a hole transport layer, bis[(N-naphthyl)-N-phenyl]benzidine, as a light-emitting layer in the 8-hydroxyquinoline aluminum complex (Alq 3 ) mixed with 2,6-double [4-[N-(4-Methoxyphenyl)-N-phenyl]aminostyryl]naphthalene-1,5-dicarbonitrile (BSN-BCN) 40% by volume, and as an electron transport layer The Alq 3 is formed into a film. Then, aluminum is formed into a film by a sputtering method, and a counter electrode is formed by etching using a photolithography method. Then, on the second main surface side of the glass substrate, an ultraviolet curing type is interposed. The other glass substrate is bonded to the other layer and sealed. The organic EL structure is formed on the glass substrate by the above procedure. The glass laminate A (hereinafter referred to as panel A) having the organic EL structure on the glass substrate is A laminate of the member for an electronic device of the present invention.

繼而,使面板A之密封體側真空吸附於壓盤後,向面板A之角隅部之玻璃基板與樹脂層之界面插入厚度0.1mm之不鏽鋼製刃具,而向玻璃基板與樹脂層之界面賦予剝離之起點。然後,利用真空吸附墊吸附面板A之支持基板第1主面後,使吸附墊上升。此處,刃具之插入係與自離子化器(KEYENCE公司製造)將除電性流體向上述玻璃基板與樹脂層之界面進行吹送一起進行。繼而,自離子化器繼續向所形成之空隙吹送除電性流體,並且將水注入剝離鋒面,同時提昇真空吸附墊。其結果為,於壓盤上僅殘留形成有有機EL構造體之玻璃基板,可將附樹脂層之支持基板剝離。 Then, after the sealing body side of the panel A is vacuum-adsorbed to the platen, a stainless steel blade having a thickness of 0.1 mm is inserted into the interface between the glass substrate and the resin layer at the corner of the panel A, and the interface between the glass substrate and the resin layer is imparted. The starting point of stripping. Then, the first main surface of the support substrate of the panel A is adsorbed by the vacuum adsorption pad, and then the adsorption pad is raised. Here, the insertion of the blade is performed by blowing an electrostatic fluid to the interface between the glass substrate and the resin layer from an ionizer (manufactured by KEYENCE Co., Ltd.). Then, the ionizer continues to blow the neutralizing fluid to the formed voids, and injects water into the stripping front while lifting the vacuum adsorbing pad. As a result, only the glass substrate on which the organic EL structure is formed remains on the platen, and the support substrate with the resin layer can be peeled off.

繼而,使用雷射裁刀或刻劃-斷裂法將被分離之玻璃基板進行切割,分割為複數個單元後,將形成有有機EL構造體之玻璃基板與對向基板組合,實施模組形成步驟而製作OLED。以上述方式獲得之OLED於特性上沒有問題。 Then, the separated glass substrate is cut by a laser cutting or scribing-breaking method, and divided into a plurality of units, and then the glass substrate on which the organic EL structure is formed is combined with the counter substrate, and the module forming step is performed. And making OLED. The OLED obtained in the above manner has no problem in characteristics.

已詳細且參照特定之實施態樣對本發明進行了說明,但對從業者而言很明確,可不脫離本發明之精神及範圍而添加各種變更或修正。 The present invention has been described in detail with reference to the specific embodiments thereof.

本申請案係基於2013年12月17日提出申請之日本專利申請2013-260453者,且將其內容作為參照併入本文中。 The present application is based on Japanese Patent Application No. 2013-260453 filed on Dec.

Claims (7)

一種玻璃積層體之製造方法,其係依序具有支持基板、聚矽氧樹脂層及玻璃基板之玻璃積層體之製造方法,且其包含:加熱步驟,其係對包含具有第1主面及第2主面之支持基板以及配置於上述支持基板之上述第1主面上之硬化性聚矽氧組合物層的附硬化性層之支持基板自上述支持基板之上述第2主面側利用複數個支持銷進行支持,對上述附硬化性層之支持基板實施加熱處理而形成聚矽氧樹脂層;積層步驟,其係於上述加熱步驟後,於上述聚矽氧樹脂層上積層玻璃基板;及表面處理步驟,其係於上述積層步驟後,或於上述加熱步驟後且上述積層步驟前,至少對上述支持基板之上述第2主面實施選自由電暈處理、電漿處理、及UV臭氧處理所組成之群中之至少1種處理。 A method for producing a glass laminate, which comprises a method for producing a glass laminate comprising a support substrate, a polyoxyxene resin layer and a glass substrate, and comprising: a heating step comprising: having a first main surface and a first The supporting substrate of the main surface and the supporting substrate of the curable layer disposed on the first main surface of the supporting substrate on the first main surface are used from the second main surface side of the supporting substrate Supporting the support of the pin, heat-treating the support substrate with the hardenable layer to form a polyoxyxylene resin layer; and stacking the layer, after the heating step, laminating the glass substrate on the polyoxyxylene resin layer; and surface The processing step is performed after the step of laminating, or after the heating step and before the laminating step, at least the second main surface of the support substrate is selected from the group consisting of corona treatment, plasma treatment, and UV ozone treatment. At least one of the constituent groups. 如請求項1之玻璃積層體之製造方法,其中上述硬化性聚矽氧組合物層至少包含具有烯基之有機烯基聚矽氧烷、及具有鍵結於矽原子之氫原子之有機氫聚矽氧烷。 The method for producing a glass laminate according to claim 1, wherein the hardenable polyoxynitride composition layer contains at least an alkenyl group-containing organic alkenyl polysiloxane and an organic hydrogen group having a hydrogen atom bonded to a germanium atom. Oxane. 如請求項1或2之玻璃積層體之製造方法,其中上述加熱步驟依序包含於第1溫度下實施加熱處理之第1加熱步驟、及於較上述第1溫度高之第2溫度下實施加熱處理之第2加熱步驟。 The method for producing a glass laminate according to claim 1 or 2, wherein the heating step sequentially includes a first heating step of performing heat treatment at a first temperature, and heating at a second temperature higher than the first temperature. The second heating step of the treatment. 如請求項3之玻璃積層體之製造方法,其中上述附硬化性層之支持基板係藉由將包含硬化性聚矽氧與溶劑之硬化性聚矽氧組合物塗佈於上述支持基板之上述第1主面上而形成,且上述第1溫度滿足上述溶劑之初餾點-30℃≦第1溫度≦上述溶劑之初餾點+30℃。 The method for producing a glass laminate according to claim 3, wherein the support substrate with the curable layer is coated on the support substrate by a curable polyoxyl composition comprising a curable polyfluorene oxide and a solvent. 1 is formed on the main surface, and the first temperature satisfies the initial boiling point of the solvent -30 ° C ≦ first temperature 初 the initial boiling point of the solvent + 30 ° C. 如請求項1至4中任一項之玻璃積層體之製造方法,其中於上述積層步驟後實施表面處理步驟。 The method for producing a glass laminate according to any one of claims 1 to 4, wherein the surface treatment step is carried out after the step of laminating. 如請求項5之玻璃積層體之製造方法,其中於上述表面處理步驟中,使複數對之包含隔著上述積層步驟中所獲得之玻璃積層體被搬送之搬送路徑相對向之高壓電極與接地電極的電極對沿著上述玻璃積層體之搬送方向進行排列,將鄰接之上述電極對中之一者之高壓電極配置於隔著上述搬送路徑之一側,將另一者之高壓電極配置於隔著上述搬送路徑之另一側,且一面將上述玻璃積層體沿著上述搬送路徑進行搬送,一面向上述高壓電極施加高頻電壓,而對上述玻璃積層體實施電暈處理。 The method for producing a glass laminate according to claim 5, wherein in the surface treatment step, the plurality of pairs are provided with a high-pressure electrode and a ground electrode which are opposed to each other by a transport path through which the glass laminate obtained in the stacking step is transported The electrode pairs are arranged along the transport direction of the glass laminate, and the high voltage electrode of one of the adjacent electrode pairs is disposed on one side of the transport path, and the other high voltage electrode is placed on the other side. On the other side of the transport path, the glass laminate is transported along the transport path, and a high-frequency voltage is applied to the high-voltage electrode, and the glass laminate is subjected to corona treatment. 一種電子裝置之製造方法,其包含:構件形成步驟,其係於藉由如請求項1至6中任一項之製造方法製造之玻璃積層體之上述玻璃基板的表面上形成電子裝置用構件,而獲得附電子裝置用構件之積層體;及分離步驟,其係自上述附電子裝置用構件之積層體去除具有上述聚矽氧樹脂層及上述支持基板之附樹脂層之支持基板,而獲得具有上述玻璃基板與上述電子裝置用構件之電子裝置。 A method of manufacturing an electronic device, comprising: a member forming step of forming a member for an electronic device on a surface of the glass substrate of the glass laminate produced by the manufacturing method according to any one of claims 1 to 6, And obtaining a laminate of the member for an electronic device; and a separating step of removing the support substrate having the resin layer of the polyoxynoxy resin layer and the support substrate from the laminate of the member for an electronic device; The glass substrate and the electronic device of the above-described electronic device member.
TW103144170A 2013-12-17 2014-12-17 Manufacturing method of glass laminated body and manufacturing method of electronic device TWI627148B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013260453A JP6136910B2 (en) 2013-12-17 2013-12-17 Manufacturing method of glass laminate and manufacturing method of electronic device

Publications (2)

Publication Number Publication Date
TW201536710A true TW201536710A (en) 2015-10-01
TWI627148B TWI627148B (en) 2018-06-21

Family

ID=53408841

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103144170A TWI627148B (en) 2013-12-17 2014-12-17 Manufacturing method of glass laminated body and manufacturing method of electronic device

Country Status (4)

Country Link
JP (1) JP6136910B2 (en)
KR (1) KR20150070977A (en)
CN (1) CN104708885B (en)
TW (1) TWI627148B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6507253B2 (en) * 2015-09-04 2019-04-24 シャープ株式会社 Display panel manufacturing method
CN107350125A (en) * 2016-05-10 2017-11-17 东莞市维迪光电器材有限公司 A kind of glass surface treatment device and method
CN106405926A (en) * 2016-11-30 2017-02-15 武汉华星光电技术有限公司 Preparation method of colour filter
EP3560897B1 (en) * 2018-04-26 2021-11-24 Schott AG Process for making a functionalised hollow body, having a layer of glass, including a superposition of one or more siloxanes and contacting with a plasma

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101242951B (en) * 2005-08-09 2012-10-31 旭硝子株式会社 Thin sheet glass laminate and method for manufacturing display using thin sheet glass laminate
JP4930161B2 (en) * 2006-05-08 2012-05-16 旭硝子株式会社 Thin glass laminated body, display device manufacturing method using thin glass laminated body, and supporting glass substrate
JP5024087B2 (en) * 2008-02-05 2012-09-12 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT AND METHOD FOR PRODUCING THEM
KR20110007134A (en) * 2008-04-17 2011-01-21 아사히 가라스 가부시키가이샤 Glass laminate, display panel with support, method for producing glass laminate and method for manufacturing display panel with support
JP5029523B2 (en) * 2008-07-14 2012-09-19 旭硝子株式会社 GLASS LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT, PANEL FOR DISPLAY DEVICE, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
TW201033000A (en) * 2009-01-09 2010-09-16 Asahi Glass Co Ltd Glass laminate and manufacturing method therefor
JPWO2011024690A1 (en) * 2009-08-27 2013-01-31 旭硝子株式会社 Laminated structure of flexible substrate-support, panel for electronic device with support, and method for manufacturing panel for electronic device
JP5562597B2 (en) * 2009-08-28 2014-07-30 荒川化学工業株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, DISPLAY DEVICE PANEL WITH SUPPORT AND METHOD FOR PRODUCING DISPLAY DEVICE PANEL
WO2011048978A1 (en) * 2009-10-20 2011-04-28 旭硝子株式会社 Glass laminate, display device panel with supporting body, display device panel, display device, method for producing glass laminate, method for producing display device panel with supporting body, and method for producing display device panel
JP5760376B2 (en) * 2010-10-22 2015-08-12 旭硝子株式会社 SUPPORT, GLASS SUBSTRATE LAMINATE, PANEL FOR DISPLAY DEVICE WITH SUPPORT, ORGANOPOLYSILOXANE COMPOSITION, AND PROCESS FOR PRODUCING DISPLAY DEVICE PANEL
JP5790392B2 (en) * 2011-10-12 2015-10-07 旭硝子株式会社 Manufacturing method of electronic device
KR101973826B1 (en) * 2011-10-18 2019-08-26 에이지씨 가부시키가이샤 Laminate, method for producing laminate, and method for producing glass substrate having member for electronic devices attached thereto
JP5887946B2 (en) * 2012-01-18 2016-03-16 旭硝子株式会社 Method for manufacturing electronic device and method for manufacturing glass laminate

Also Published As

Publication number Publication date
CN104708885A (en) 2015-06-17
JP2015116698A (en) 2015-06-25
KR20150070977A (en) 2015-06-25
JP6136910B2 (en) 2017-05-31
CN104708885B (en) 2018-07-20
TWI627148B (en) 2018-06-21

Similar Documents

Publication Publication Date Title
TWI652165B (en) Manufacturing method of supporting substrate with resin layer, method for producing glass laminate, and method for manufacturing electronic device
TWI580566B (en) A manufacturing method of an electronic device, and a method for manufacturing a glass laminate
JP5924344B2 (en) LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING GLASS SUBSTRATE WITH ELECTRONIC DEVICE MEMBER
JP5796449B2 (en) Manufacturing method of electronic device, manufacturing method of carrier substrate with resin layer
TWI647099B (en) Glass laminate and method of manufacturing electronic device
TWI649192B (en) Glass laminate, method of manufacturing same, and method of manufacturing electronic component
TWI622493B (en) Method for manufacturing glass laminate and method for manufacturing electronic device
TWI655089B (en) Method for manufacturing electronic device, method for manufacturing glass laminate
TW201332768A (en) Method for producing electronic device
TW201432971A (en) Electronic device manufacturing method, and glass laminate manufacturing method
TWI655092B (en) Glass laminate, and method of manufacturing electronic device
TW201536710A (en) Manufacturing method of glass laminated body and manufacturing method of electronic device
KR20160012149A (en) Resin-layer-equipped support substrate and method for producing same, glass laminate and method for producing same, and method for producing electronic device
TWI613073B (en) Glass laminate, method of manufacturing the same, and support substrate with oxy-resin layer
TW201627155A (en) Glass laminate, method for producing same and method for manufacturing electronic device
TW201528481A (en) Manufacturing method of electronic device
TW201420335A (en) Glass laminate and manufacturing method for same, and support substrate having silicone resin layer attached thereto and manufacturing method for same
TW201601902A (en) Supportive substrate with resin layer and manufacturing method thereof, glass laminate, and method for manufacturing electronic device
WO2015016113A1 (en) Electronic device manufacturing method
TWI656967B (en) Glass laminated body, manufacturing method thereof, and manufacturing method of electronic device