CN103022712A - Phase- and amplitude-calibrated packaged sandwich antenna with embedded plated through holes - Google Patents
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Abstract
The invention relates to a horn antenna, in particular to a phase- and amplitude-calibrated packaged sandwich antenna with embedded plated through holes. The antenna comprises a microstrip feeder (1), a horn antenna (2) and plated through holes (3), wherein the microstrip feeder (1), the horn antenna (2) and the plated through holes (3) are integrated on a dielectric substrate (4). The dielectric substrate (4) is inside three-dimensional package (5). One end of the microstrip feeder (1) is connected with an internal circuit (8) through a coplanar waveguide (7) on the side of the package. The horn antenna (2) comprises a bottom metal plane (9), a top metal plane (10) and plated through hole sidewalls (11). The plated through holes (3) form a middle plated through hole array (16), a left plated through hole array (17) and a right plated through hole array (18). Four dielectric loaded waveguides are formed in the horn antenna (2). One end of each dielectric loaded waveguide faces to an antenna narrow-section waveguide short surface (15), and the other end of each dielectric loaded waveguide is close to an antenna aperture surface (12). Antenna gain of the phase- and amplitude-calibrated packaged sandwich antenna with embedded plated through holes can be increased.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of encapsulation interlayer antenna of embedded metal via hole phase amplitude calibration.
Background technology
Adopt lamination 3-D multi-chip (3D-MCM) technology, can be integrated in a radio system in the 3-D stacks encapsulation, also need antenna is integrated in the encapsulation for this reason.Normally surperficial antenna integrated in encapsulation for example is integrated in paster antenna the top of encapsulation.But need sometimes antenna is integrated in a middle interlayer of encapsulation to satisfy the needs of system.If integrated horn antenna just can be realized above-mentioned requirements in the inner interlayer of encapsulation.But usually horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thereby has limited its application on encapsulating structure.In recent years, substrate integration wave-guide horn antenna based on the substrate integrated waveguide technology development has the advantages that size is little, lightweight, be easy to Planar integration, but the gain of traditional substrate integration wave-guide horn antenna is relatively low, its reason is because horn mouth constantly opens, it is asynchronous when causing Electromagnetic Wave Propagation to the horn mouth diametric plane phase place to appear, the PHASE DISTRIBUTION of bore electric field strength is inhomogeneous, and radiation directivity and gain reduce; The amplitude of electromagnetic field is also very inhomogeneous on the bore face in addition, narrowing toward each end broad in the middle, and this also affects the radiance of antenna.The methods such as at present existing employing medium loading, medium prism, correct the asynchronous of horn mouth diametric plane phase place, but these methods all can not be improved the inconsistent of horn antenna and free space wave impedance on the bore face, can not improve the uniformity that electromagnetic field magnitude distributes on the bore face, and these phase alignment structures have increased the overall structure size of antenna, are not suitable for being integrated into the inner interlayer of encapsulation.
Summary of the invention
Technical problem: the encapsulation interlayer antenna that the objective of the invention is to propose a kind of embedded metal via hole phase amplitude calibration, this antenna inside is embedded with the metallization arrays of vias in order to the inconsistent consistency with improving amplitude distribution on the bore face of electromagnetic phase place on the RECTIFYING ANTENNA bore face, reduce simultaneously the quantity of bore face null field, improve aperture efficiency and the gain of interlayer antenna.
Technical scheme: this antenna of encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration of the present invention comprises microstrip feed line, substrate integration wave-guide horn antenna and the embedded metal via hole that is arranged on the medium substrate, and medium substrate is at the internal layer of three-dimension packaging; Described microstrip feed line links to each other with the internal circuit of three-dimension packaging by co-planar waveguide; The substrate integration wave-guide horn antenna is comprised of with the metallization via hole loudspeaker sidewall that is connected medium substrate and connects bottom surface metal flat end face metal flat the bottom surface metal flat that is positioned at medium substrate one side, the end face metal flat that is positioned at the medium substrate another side; Metallization via hole embedded in the substrate integration wave-guide horn antenna connects bottom surface metal flat and end face metal flat, and consists of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias; In horn antenna, there is first medium to fill waveguide, second medium filling waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide, first medium is filled a port of waveguide, second medium filling waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all towards the microstrip feed line direction, and its another port is the bore face of concordant and close antenna all.
One end of described microstrip feed line links to each other with horn antenna, and the other end of microstrip feed line is the input/output port of antenna near package side surface; Microstrip feed line links to each other with an end of the co-planar waveguide of package side surface by the antenna input/output port, and the other end of co-planar waveguide links to each other with the encapsulation internal circuit.
Described intermediate metallization arrays of vias is positioned at the middle position of two sidewalls of substrate integration wave-guide horn antenna, and the substrate integration wave-guide horn antenna is divided into symmetrical two parts, in the both sides of the metallization arrays of vias of centre, symmetrical have left side dielectric-filled waveguide and a right dielectric-filled waveguide.
Described intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias shape all are to be linked to each other with three sections of tail end straightways by head end straightway, polygon to consist of, the head end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias is all towards the microstrip feed line direction, the tail end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias stretches to the antenna opening diametric plane, but less than on the antenna opening diametric plane.
Head end straightway in described intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias or the shape of tail end straightway can be straight line, broken line or exponential line etc., and its length can be zero or finite length; Polygon in intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
The width of described left side dielectric-filled waveguide and the right dielectric-filled waveguide will guarantee that all its main mould can be to centre arrays of vias, the left side metallization arrays of vias that metallizes.
Middle transmission and not being cut off.
Described first medium is filled waveguide, second medium and is filled the width of waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide and will guarantee that all its main mould can fill waveguide, second medium at first medium and fill in waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide transmission and be not cut off.
Select the position of polygon vertex in the intermediate metallization arrays of vias and select head end straightway in the left side metallization arrays of vias or polygon on the left side dielectric-filled waveguide in the position, can be so that fill waveguide and second medium by first medium and fill the two-way electromagnetic wave constant amplitude homophase that transmits in the waveguide and arrive the port of dielectric-filled waveguide again to the bore face of antenna.
Select the position of polygon vertex in the intermediate metallization arrays of vias and select head end straightway in the right metallization arrays of vias or the polygon position in the dielectric-filled waveguide on the right, can be so that arrive the port of dielectric-filled waveguide again to the bore face of antenna by the two-way electromagnetic wave constant amplitude homophase that transmits in the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide.
The spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength in the metallization via hole loudspeaker sidewall, so that the metallization via hole loudspeaker sidewall that consists of can equivalence be electric wall; The spacing of two adjacent metallization via holes will be equal to or less than 1/10th of operation wavelength in the metallization via hole, so that the metallization arrays of vias that consists of can equivalence be electric wall.
Co-planar waveguide from the electromagnetic wave signal process three-dimension packaging side that encapsulates internal circuit enters the antenna input/output port, enter into the substrate integration wave-guide horn antenna by microstrip feed line again, after propagating a segment distance to the bore face direction of antenna, metallization arrays of vias in the middle of running into, two dielectric-filled waveguides transmission about the two-way that just minute success rate is equal enters respectively.About two dielectric-filled waveguide full symmetrics, take the dielectric-filled waveguide on the left side as the example explanation.Enter when electromagnetic wave after the dielectric-filled waveguide transmission on the left side behind the segment distance, will run into the arrays of vias that metallizes, be divided into again two-way and transmit to the bore face by dielectric-filled waveguide; The dielectric-filled waveguide on the position of polygon vertex, the adjustment left side is somebody's turn to do the position of polygon vertex in the position of metallization arrays of vias head end and the arrays of vias that metallizes in the adjustment intermediate metallization arrays of vias, can change relative phase velocity and the relative power of this two-way electromagnetic transmission, and then adjust relative phase and the relative amplitude of electromagnetic wave on the antenna opening diametric plane by two dielectric-filled waveguide transmission; If near the port width of these two dielectric-filled waveguides antenna opening diametric plane equates, adjust the position of polygon vertex in the intermediate metallization arrays of vias, the head end that is adjusted at metallization arrays of vias in the left side in the dielectric-filled waveguide of the left side and the position of polygon vertex, can so that the electromagnetic power by the transmission of two dielectric-filled waveguides equate, simultaneously also so that this two-way electromagnetic wave homophase arrive the port of dielectric-filled waveguide and then arrive again the bore face of antenna; Transmission also is same situation in the electromagnetic wave dielectric-filled waveguide on the right.Just can be controlled in the above described manner near the electromagnetic amplitude of antenna opening diametric plane and PHASE DISTRIBUTION, if remaining near the port width of four dielectric-filled waveguides the antenna opening diametric plane equates, and the position of the head end of adjustment metallization arrays of vias and polygon vertex is so that transmit electromagnetic port with power homophase arrival dielectric-filled waveguide and then arrive the antenna opening diametric plane again by these four dielectric-filled waveguides, just can so that near the field intensity phase place the antenna opening diametric plane is all consistent with amplitude distribution, so just can improve the aperture efficiency of antenna and the purpose of gain.In addition since the bore face on except the loudspeaker sidewall be the null field, other zone of bore face does not have null field, the field strength distribution of bore face is also relatively more even like this.In like manner also can near the bore face of antenna, realize as required specific field intensity amplitude and PHASE DISTRIBUTION.
Beneficial effect: the beneficial effect of the encapsulation interlayer antenna of embedded metal via hole phase amplitude calibration of the present invention is, improved the antenna opening diametric plane power on magnetic wave phase place consistency, the amplitude distribution of magnetic wave is more even so that the antenna opening diametric plane powers on again simultaneously, also avoid more null field occurring at the antenna opening diametric plane, thus the aperture efficiency and the gain that have improved the interlayer antenna.
Description of drawings
Fig. 1 is the encapsulation interlayer antenna overall package structural representation of embedded metal via hole phase amplitude calibration.
Fig. 2 is the encapsulation interlayer antenna face structural representation of embedded metal via hole phase amplitude calibration.
Fig. 3 is the encapsulation interlayer antenna reverse side structural representation of embedded metal via hole phase amplitude calibration.
Have among the figure: microstrip feed line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, antenna input/output port 6, co-planar waveguide 7, internal circuit 8, bottom surface metal flat 9, end face metal flat 10, metallization via hole loudspeaker sidewall 11, the bore face 12 of antenna, the narrow Cross-section Waveguide Using 13 of antenna, the tubaeform waveguide 14 of antenna, ground plane 15, intermediate metallization arrays of vias 16, left side metallization arrays of vias 17, the right metallization arrays of vias 18, left side dielectric-filled waveguide 19, the right dielectric-filled waveguide 20, first medium is filled waveguide 21, second medium is filled waveguide 22, the 3rd dielectric-filled waveguide 23, the port 25 of the 4th dielectric-filled waveguide 24 and dielectric-filled waveguide.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Embodiment of the present invention is: the encapsulation interlayer antenna of embedded metal via hole phase amplitude calibration is comprised of microstrip feed line 1, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three parts, this three part all is integrated on the same medium substrate 4, and this medium substrate is positioned at the internal layer of 4 3-dimensional multi-layered encapsulation 5; One termination substrate integration wave-guide horn antenna 2 of microstrip feed line 1, microstrip feed line 1 other end is near package side surface, it is the input/output port 6 of antenna, the input/output port 6 of antenna is spent to cross with the co-planar waveguide 7 of package side surface by little band and co-planar waveguide 90 and is linked to each other, and the other end of co-planar waveguide 7 links to each other with encapsulation internal circuit 8; Substrate integration wave-guide horn antenna 2 is comprised of bottom surface metal flat 9, end face metal flat 10 and metallization via hole loudspeaker sidewall 11, bottom surface metal flat 9 and end face metal flat 10 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom surface metal flat 9 and end face metal flat 10; The inside of horn antenna 2 is formed by narrow Cross-section Waveguide Using 13 and tubaeform waveguide 14 two parts serial connection; One termination microstrip feed line 1 of horn antenna 2, bottom surface metal flat 9 is connected with the ground plane 15 of microstrip feed line 1, the other end of horn antenna 2 is bore faces 12 of antenna, metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom surface metal flat 9 and end face metal flat 10, and these embedded metallization via holes 3 consist of intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18; Middle metallization arrays of vias 16 is positioned at the position in the middle of the horn antenna two side 12, and in the both sides of the metallization arrays of vias 16 of centre, symmetrical have left side dielectric-filled waveguide 19 and a right dielectric-filled waveguide 20; Intermediate metallization arrays of vias 16 shapes are that a paragraph header end straightway connects polygon and connects one section tail end straightway again, the head end of intermediate metallization arrays of vias 16 is towards the direction of microstrip feed line 1, the tail end of intermediate metallization arrays of vias 16 stretches to the bore face 12 of horn antenna, but less than bore face 12; Metallization arrays of vias 17 in the left side is arranged in the dielectric-filled waveguide 19 on horn antenna 2 left sides, left side dielectric-filled waveguide 19 is divided into first medium fills waveguide 21 and second medium filling waveguide 22; In the dielectric-filled waveguide 20 of horn antenna the right, metallization arrays of vias 18 in the right is arranged, the right dielectric-filled waveguide 20 is divided into the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24; Left side metallization arrays of vias 17 and the right metallization arrays of vias 18 shapes all are that a paragraph header end straightway connects polygon and connects one section tail end straightway again, the head end of left side metallization arrays of vias 17 and the right metallization arrays of vias 18 all stretches to the bore face 12 of horn antenna 2 towards the tail end of direction, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 of microstrip feed line 1, but on bore face 12, can avoid occurring on the bore face 12 like this null field of electric field; Intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 form in substrate integration wave-guide horn antenna 2 that first medium is filled waveguide 21, second medium is filled waveguide 22, the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24, and first medium is filled waveguide 21, second medium and filled waveguide 22, the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 near the equal of port 25 width of antenna opening diametric planes 12 or do not wait.
In dielectric-filled waveguide, the phase velocity of the propagation of electromagnetic wave master mould (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the transmission phase velocity of main mould is just lower; Otherwise the dielectric-filled waveguide width is narrower, and the transmission phase velocity of main mould is just higher.Co-planar waveguide 7 from electromagnetic wave signal process three-dimension packaging 5 sides that encapsulate internal circuit 8 enters antenna input/output port 6, enter into substrate integration wave-guide horn antenna 2 by microstrip feed line 1 again, after propagating a segment distance, run into intermediate metallization arrays of vias 16, because symmetry, the electromagnetic wave two-way that just minute success rate is equal enters respectively left side dielectric-filled waveguide 19 and 20 transmission of the right dielectric-filled waveguide.Left side dielectric-filled waveguide 19 and the right dielectric-filled waveguide 20 full symmetrics, take the dielectric-filled waveguide 19 on the left side as the example explanation, when electromagnetic wave enters after left side dielectric-filled waveguide 19 transmission behind the segment distance, to run into left side metallization arrays of vias 17, be divided into again two-way and fill waveguide 22 to the direction transmission of antenna opening diametric plane 12 by first medium filling waveguide 21 and second medium respectively, adjust the position of polygon vertex in the intermediate metallization arrays of vias 16, the position of polygon vertex in the position of the head end of left side metallization arrays of vias 17 and the left side metallization arrays of vias 17 in the dielectric-filled waveguide 19 of the adjustment left side, can adjust by first medium filling waveguide 21 and fill electromagnetic relative phase velocity and the relative power of transmission in the waveguide 22 with second medium, and then adjust relative phase and the relative amplitude of electromagnetic wave on bore face 12 of filling waveguide 21 and second medium filling waveguide 22 transmission by first medium; If filling the width of waveguide 21 and near the port 25 of second medium filling waveguide 22 antenna opening diametric plane 12, first medium equates, be adjusted at the head end of metallization arrays of vias 17 in the left side in the left side dielectric-filled waveguide 19 and the position of polygon vertex, can be so that equal by the electromagnetic power of first medium filling waveguide 21 and second medium filling waveguide 22 transmission, and so that this two-way electromagnetic wave homophase arrives the port 25 of dielectric-filled waveguide and then arrives the bore face 12 of antenna again, it is all the same with phase place with the field intensity amplitude distribution of second medium filling waveguide 22 ports 25 that near the first medium antenna opening diametric plane 12 is filled waveguide 21 like this; Electromagnetic wave on the right in the dielectric-filled waveguide 20 transmission also be same situation.Just can be controlled in the above described manner electromagnetic amplitude and PHASE DISTRIBUTION near the antenna opening diametric plane 12, if near the first medium that remains on the antenna opening diametric plane 12 is filled waveguide 21, second medium is filled waveguide 22, the width of the port 25 of the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 all equates, and adjustment intermediate metallization arrays of vias 16, the head end of left side metallization arrays of vias 17 and the right metallization arrays of vias 18 and the position of polygon vertex are so that fill waveguide 21 by first medium, second medium is filled waveguide 22, the electromagnetic port 25 that arrives these dielectric-filled waveguides with the power homophase of the 3rd dielectric-filled waveguide 23 and the transmission of the 4th dielectric-filled waveguide 24 arrives antenna opening diametric plane 12 again, just can be so that first medium be filled waveguide 21 near antenna opening diametric plane 12, second medium is filled waveguide 22, the field intensity phase place of four ports 25 of the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 is all consistent with amplitude distribution, so just reaches the purpose that improves antenna aperture efficient and gain.Owing to being the null field on loudspeaker sidewall 11 on the antenna opening diametric plane 12, other zone on the antenna opening diametric plane 12 does not have null field in addition, and the field strength distribution of bore face 12 is also relatively more even like this.In like manner also can realize specific field intensity amplitude and PHASE DISTRIBUTION at the bore face 12 of antenna as required.
On technique, the encapsulation interlayer antenna of embedded metal via hole phase amplitude calibration both can adopt the three-dimensional resinous packaging technology, also can adopt LTCC (LTCC) technique to realize.Via hole 3 and the metallization via sidewall 11 of wherein metallizing can be that the hollow metal through hole also can be the solid metal hole, also can be continuous metallization wall, and the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, can add again four strip metal arrays of vias four dielectric-filled waveguides are divided into eight dielectric-filled waveguides, and so that arrive again antenna opening diametric plane 12 by these eight dielectric-filled waveguide electromagnetic waves with the port that identical amplitude arrives dielectric-filled waveguide, amplitude distribution on the antenna opening diametric plane 12 is more even so simultaneously, and the quantity that increases the dielectric-filled waveguide on the antenna opening diametric plane 12 might not require to increase simultaneously the width of antenna opening diametric plane 12, as long as it is just passable to guarantee that dielectric-filled waveguide can transmit main mould.Because the metallization via sidewall 11 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 12 is far away, therefore with respect to from the dielectric-filled waveguide of metallization via sidewall 11 away from, from the width relative narrower of the dielectric-filled waveguide of metallization via sidewall 11 close to obtain higher electromagnetic transmission phase velocity.Polygon in antenna intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 can be triangle, quadrangle, pentagon or other polygon, and the shape on these polygonal limits or many limits can be straight line, camber line or other curve; Head end straightway in intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 and the shape of tail end straightway can be straight line, broken line, exponential line or other curve.
According to the above, just can realize the present invention.
Claims (9)
1. the encapsulation interlayer antenna of embedded metal via hole phase amplitude calibration, it is characterized in that this antenna comprises microstrip feed line (1), substrate integration wave-guide horn antenna (2) and the embedded metal via hole (3) that is arranged on the medium substrate (4), medium substrate (4) is at the internal layer of three-dimension packaging (5); Described microstrip feed line (1) links to each other with the internal circuit (8) of three-dimension packaging (5) by co-planar waveguide (7); Substrate integration wave-guide horn antenna (2) is comprised of the bottom surface metal flat (9) that is positioned at medium substrate (4) one side, the metallization via hole loudspeaker sidewalls (11) that are positioned at the end face metal flat (10) of medium substrate (4) another side and are connected medium substrate (4) connection bottom surface metal flat (9) end face metal flat (10); Metallization via hole (3) embedded in the substrate integration wave-guide horn antenna (2) connects bottom surface metal flat (9) and end face metal flat (10), and consists of intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18); In horn antenna (2), there is first medium to fill waveguide (21), second medium filling waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24), first medium is filled a port of waveguide (21), second medium filling waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) all towards microstrip feed line (1) direction, and its another port (25) are the bore face (12) of concordant and close antenna all.
2. the encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration according to claim 1, an end that it is characterized in that described microstrip feed line (1) links to each other with horn antenna (2), the other end of microstrip feed line (1) is the input/output port (6) of antenna near package side surface; Microstrip feed line (1) links to each other with an end of the co-planar waveguide (7) of package side surface by antenna input/output port (6), and the other end of co-planar waveguide (7) links to each other with encapsulation internal circuit (8).
3. the encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration according to claim 1, it is characterized in that described intermediate metallization arrays of vias (16) is positioned at the middle position of two sidewalls (11) of substrate integration wave-guide horn antenna (2), and substrate integration wave-guide horn antenna (2) is divided into symmetrical two parts, in the both sides of the metallization arrays of vias (16) of centre, symmetrical have left side dielectric-filled waveguide (19) and a right dielectric-filled waveguide (20).
4. according to claim 1 or the encapsulation interlayer antenna of 3 described a kind of embedded metal via hole phase amplitudes calibrations, it is characterized in that described intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) shape all are by the head end straightway, the polygon formation that links to each other with three sections of tail end straightways, intermediate metallization arrays of vias (16), the head end of left side metallization arrays of vias (17) and the right metallization arrays of vias (18) is all towards microstrip feed line (1) direction, intermediate metallization arrays of vias (16), the tail end of left side metallization arrays of vias (17) and the right metallization arrays of vias (18) stretches to antenna opening diametric plane (12), but less than on the antenna opening diametric plane (12).
5. the encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration according to claim 1, it is characterized in that head end straightway in described intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) or the shape of tail end straightway can be straight line, broken line or exponential line etc., its length can be zero or finite length; Polygon in intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
6. the encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration according to claim 1, the width that it is characterized in that described left side dielectric-filled waveguide (19) and the right dielectric-filled waveguide (20) will guarantee that all its main mould can these dielectric-filled waveguides (16) and (17) middle transmission and not being cut off.
7. the encapsulation interlayer antenna of a kind of embedded metal via hole phase amplitude calibration according to claim 1 is characterized in that described first medium fills waveguide (21), second medium and fill the width of waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) and will guarantee that all its main mould can fill waveguide (21), second medium at first medium and fill and transmit in waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) and be not cut off.
8. according to claim 1 or the encapsulation interlayer antenna of 4 or 5 described a kind of embedded metal via hole phase amplitudes calibrations, it is characterized in that selecting the position of polygon vertex in the intermediate metallization arrays of vias (16) and select head end straightway in the left side metallization arrays of vias (17) or polygon on the left side dielectric-filled waveguide (19) in the position, can be so that fill waveguide (21) and second medium by first medium and fill the port (25) of the two-way electromagnetic wave constant amplitude homophase arrival dielectric-filled waveguide of transmission in the waveguide (22) and arrive again on the bore face (12) of antenna.
9. according to claim 1 or the encapsulation interlayer antenna of 4 or 5 described a kind of embedded metal via hole phase amplitudes calibrations, it is characterized in that selecting the position of polygon vertex in the intermediate metallization arrays of vias (16) and select head end straightway in the right metallization arrays of vias (18) or the polygon position in the dielectric-filled waveguide (20) on the right, can so that the port (25) of the two-way electromagnetic wave constant amplitude homophase arrival dielectric-filled waveguide by transmission in the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) arrive again on the bore face (12) of antenna.
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| CN201210563850.3A CN103022712B (en) | 2012-12-21 | 2012-12-21 | Phase- and amplitude-calibrated packaged sandwich antenna with embedded plated through holes |
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| CN201210563850.3A CN103022712B (en) | 2012-12-21 | 2012-12-21 | Phase- and amplitude-calibrated packaged sandwich antenna with embedded plated through holes |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733864A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Planar horn antenna for gap embedded phase position amplitude calibration |
| CN104779444A (en) * | 2015-04-02 | 2015-07-15 | 南京邮电大学 | Packaging sandwich antenna with function of gap embedded phase amplitude calibration |
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| US20090066597A1 (en) * | 2007-09-07 | 2009-03-12 | Songnan Yang | Substrate Integrated Waveguide Antenna Array |
| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
| US20090303145A1 (en) * | 2008-06-05 | 2009-12-10 | Shijo Tetsu | Post-wall waveguide based short slot directional coupler, butler matrix using the same and automotive radar antenna |
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| CN104733864A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Planar horn antenna for gap embedded phase position amplitude calibration |
| CN104733864B (en) * | 2015-03-30 | 2018-04-24 | 东南大学 | Gap embeds the planar horn antenna of phase amplitude calibration |
| CN104779444A (en) * | 2015-04-02 | 2015-07-15 | 南京邮电大学 | Packaging sandwich antenna with function of gap embedded phase amplitude calibration |
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