CN103022670B - Amplitude-calibrated 3D-package surface antenna with embedded plated through holes - Google Patents
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Abstract
The invention relates to a horn antenna, in particular to an amplitude-calibrated 3D-package surface antenna with embedded plated through holes. The antenna comprises a plated vertical through hole feeder (1), a horn antenna (2) and plated through holes (3), wherein the plated vertical through hole feeder (1), the horn antenna (2) and the plated through holes (3) are integrated on a dielectric substrate (4). The dielectric substrate (4) is arranged at the topmost of 3D package (5). One end of the plated vertical through hole feeder (1) is connected with an internal circuit (8). The horn antenna (2) comprises a bottom metal plane (6), a top metal plane (9) and plated through hole sidewalls (11). The plated through holes (3) form a middle plated through hole array (16), a left plated through hole array (17) and a right plated through hole array (18). Four dielectric loaded waveguides are formed in the horn antenna (2). One end of each dielectric loaded waveguide faces to an antenna narrow-section waveguide short surface (15), and the other end of each dielectric loaded waveguide is close to an antenna aperture surface (12). Aperture efficiency of the amplitude-calibrated 3D-package surface antenna with embedded plated through holes can be improved.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of three-dimension packaging skin antenna of embedded metal via hole amplitude calibration.
Background technology
Adopt micro-packaging technology, a radio system can be integrated in an encapsulation, also need antenna to be integrated in the surface of encapsulation for this reason.At the integrated paster antenna of package surface, be a kind of very natural mode, but the radiation of paster antenna is main to being surperficial normal direction, and the radiation that we need is sometimes main to being direction surfacewise.If just can realize the radiation along surface direction at the integrated horn antenna of package surface.But conventionally horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thereby limited its application on encapsulating structure.In recent years, substrate integration wave-guide horn antenna based on substrate integrated waveguide technology development has the advantages that size is little, lightweight, be easy to Planar integration, but the gain of traditional substrate integration wave-guide horn antenna is relatively low, one of them reason is that the amplitude of electromagnetic field on bore face is very inhomogeneous, narrowing toward each end broad in the middle, affects the radiance of antenna.The methods such as existing employing medium loading at present, medium prism, correct the asynchronous of horn mouth diametric plane phase place, but these methods all can not be improved the uniformity that on bore face, electromagnetic field magnitude distributes, and these phase alignment structures have increased the overall structure size of antenna, be not suitable for being integrated into package surface.
Summary of the invention
Technical problem: the three-dimension packaging skin antenna that the object of the invention is to propose a kind of embedded metal via hole amplitude calibration, this horn antenna inside be embedded with metallization arrays of vias in order to improve antenna opening diametric plane power on the consistency of magnetic wave amplitude distribution, reduce the quantity of bore face null field simultaneously, improve aperture efficiency and the gain of antenna.
Technical scheme: the three-dimension packaging skin antenna of embedded metal via hole amplitude calibration of the present invention comprises metallization vertical vias feeder line, substrate integration wave-guide horn antenna and the embedded metal via hole being arranged on medium substrate, and medium substrate is in the top of three-dimension packaging; Described metallization vertical vias feeder line is connected with the internal circuit of three-dimension packaging; Substrate integration wave-guide horn antenna by be positioned at medium substrate one side bottom surface metal flat, be positioned at the end face metal flat of medium substrate another side and form with the metallization via hole loudspeaker sidewall that is connected bottom surface metal flat end face metal flat through medium substrate; Metallization via hole embedded in substrate integration wave-guide horn antenna connects bottom surface metal flat and end face metal flat, and forms intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias; Intermediate metallization arrays of vias is positioned at the middle position of two sidewalls of substrate integration wave-guide horn antenna, and substrate integration wave-guide horn antenna is divided into symmetrical two parts, in the both sides of middle metallization arrays of vias, symmetrical have left side dielectric-filled waveguide and a right dielectric-filled waveguide; In horn antenna, there is first medium to fill waveguide, second medium filling waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide, first medium is filled a port that waveguide, second medium fill waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all towards the short circuit face direction of the narrow Cross-section Waveguide Using of antenna, and its another port is concordant and close antenna opening diametric plane all.
One end of metallization vertical vias feeder line is connected with the internal circuit of three-dimension packaging through the circular hole on the metal flat of medium substrate bottom surface, there is individual circular pad on its other end top, metallization vertical vias feeder line top circular pad 10 is at the center of circular hole of the end face metal flat of medium substrate, and the end face metal flat of therefore metallize vertical vias feeder line top circular pad and medium substrate does not directly electrically contact.
Substrate integration wave-guide horn antenna consists of narrow Cross-section Waveguide Using and tubaeform waveguide serial connection; One end of narrow Cross-section Waveguide Using is short circuit face, and the other end of narrow Cross-section Waveguide Using is connected with tubaeform waveguide, and one end of tubaeform waveguide is connected with narrow Cross-section Waveguide Using, and the other end of tubaeform waveguide is antenna opening diametric plane.
Metallization arrays of vias in the left side is divided into first medium left side dielectric-filled waveguide and fills waveguide and second medium filling waveguide, and the right metallization arrays of vias is divided into the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide the dielectric-filled waveguide on the right.
Metallization arrays of vias in the left side is to be all connected and to form with three sections of tail end straightways by head end straightway, polygon with the right metallization arrays of vias shape, the head end of left side metallization arrays of vias and the right metallization arrays of vias is all towards the short circuit face direction of the narrow Cross-section Waveguide Using of horn antenna, the tail end of left side metallization arrays of vias and the right metallization arrays of vias stretches to antenna opening diametric plane, but less than on antenna opening diametric plane.
The shape of the straightway in intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias can be straight line, broken line or exponential line etc., and its length can be zero or finite length.
Polygon in left side metallization arrays of vias and the right metallization arrays of vias can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
Left side dielectric-filled waveguide, the right dielectric-filled waveguide, first medium fill waveguide, second medium fill the width of waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all to guarantee its main mould can on the left side dielectric-filled waveguide, the right dielectric-filled waveguide, first medium fill waveguide, second medium is filled transmission in waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide and is not cut off.
Select the position in head end straightway in left side metallization arrays of vias or polygon on the left side dielectric-filled waveguide, make to fill port that waveguide and second medium fill the two-way electromagnetic wave constant amplitude arrival dielectric-filled waveguide transmitting in waveguide again to radiation on the bore face of antenna by first medium.
Select head end straightway in the right metallization arrays of vias or the polygon position in dielectric-filled waveguide on the right, make port that two-way electromagnetic wave constant amplitude by transmitting in the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide arrives dielectric-filled waveguide again to radiation on the bore face of antenna.
In metallization via hole loudspeaker sidewall, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall forming can be equivalent to electric wall; The spacing of two adjacent metallization via holes will be equal to or less than 1/10th of operation wavelength, makes the intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias that form can be equivalent to electric wall.
In dielectric-filled waveguide, the field intensity amplitude distribution rule of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide port, if the width of a plurality of dielectric-filled waveguides is all the same, its main mould field intensity amplitude distribution rule just identical; If the power of these dielectric-filled waveguide inputs is all identical, the size of the field intensity amplitude on these dielectric-filled waveguide ports and distribution are all identical.From the electromagnetic wave signal of encapsulation internal circuit, from one end of metallization vertical vias feeder line, the input/output port by antenna enters into substrate integration wave-guide horn antenna, in the bore face direction to antenna, propagate after a segment distance, metallization arrays of vias in the middle of running into, just the equal two-way of minute success rate enters respectively the dielectric-filled waveguide transmission of two of left and right.Two the dielectric-filled waveguide full symmetrics in left and right, the dielectric-filled waveguide on the left side of take is example explanation.When electromagnetic wave enters after the dielectric-filled waveguide transmission on the left side after a segment distance, will run into the arrays of vias that metallizes, then be divided into two-way and transmit to bore face by dielectric-filled waveguide; The position of polygon vertex in the position of this metallization arrays of vias head end of the dielectric-filled waveguide on the adjustment left side and metallization arrays of vias, can change the relative power of this two-way electromagnetic transmission, and then adjust electromagnetic wave by two the dielectric-filled waveguides transmission relative amplitude on antenna opening diametric plane; If near the port width of these two dielectric-filled waveguides antenna opening diametric plane equates, be adjusted in the dielectric-filled waveguide of the left side left side metallization head end of arrays of vias and the position of polygon vertex, can be so that the electromagnetic wave by two dielectric-filled waveguides transmission arrives the port of dielectric-filled waveguide with power and then arrives the bore face of antenna again; In electromagnetic wave dielectric-filled waveguide on the right, transmission is also same situation.Just can be controlled in the above described manner near the electromagnetic amplitude distribution of antenna opening diametric plane, if remaining near the port width of four dielectric-filled waveguides antenna opening diametric plane equates, and adjust the metallization head end of arrays of vias and the position of polygon vertex makes arrived the port of dielectric-filled waveguide and then arrived antenna opening diametric plane again by these four electromagnetic same power of dielectric-filled waveguides transmission, just can, so that near field intensity amplitude distribution antenna opening diametric plane is consistent, so just can reaches and improve the aperture efficiency of antenna and the object of gain.In addition due on bore face except loudspeaker sidewall is null field, other region of bore face does not have null field, the field strength distribution of bore face is also relatively more even like this.In like manner also can near the bore face of antenna, realize as required specific field intensity amplitude distribution.
Beneficial effect: the beneficial effect of the three-dimension packaging skin antenna of embedded metal via hole amplitude calibration of the present invention is, on the surface of three-dimension packaging, make the power on amplitude distribution of magnetic wave of antenna opening diametric plane more even, also avoid on antenna opening diametric plane, occurring more null field, thereby improved aperture efficiency and the gain of antenna.
Accompanying drawing explanation
Fig. 1 is the three-dimension packaging skin antenna overall structure schematic diagram of embedded metal via hole amplitude calibration
Fig. 2 is the three-dimension packaging skin antenna Facad structure schematic diagram of embedded metal via hole amplitude calibration.
Fig. 3 is the three-dimension packaging skin antenna reverse side structural representation of embedded metal via hole amplitude calibration.
In figure, have: metallization vertical vias feeder line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, bottom surface metal flat 6, bottom surface metal flat circular hole 7, internal circuit 8, end face metal flat 9, metallization vertical vias feeder line top circular pad 10, metallization via hole loudspeaker sidewall 11, the bore face 12 of antenna, the narrow Cross-section Waveguide Using 13 of antenna, the tubaeform waveguide 14 of antenna, the short circuit face of narrow Cross-section Waveguide Using 15, intermediate metallization arrays of vias 16, left side metallization arrays of vias 17, the right metallization arrays of vias 18, left side dielectric-filled waveguide 19, the right dielectric-filled waveguide 20, first medium is filled waveguide 21, second medium is filled waveguide 22, the 3rd dielectric-filled waveguide 23, the port 25 of the 4th dielectric-filled waveguide 24 and dielectric-filled waveguide.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Embodiment of the present invention is: the three-dimension packaging skin antenna of embedded metal via hole amplitude calibration is comprised of the vertical vias feeder line 1 that metallizes, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three parts, this three part is all integrated on same medium substrate 4, and medium substrate 4 is in the top of three-dimension packaging 5; The vertical medium substrate 4 that connects of metallization vertical vias feeder line 1, one end of metallization vertical vias feeder line 1 is connected with the internal circuit 8 of three-dimension packaging 5 through the circular hole 7 on medium substrate 4 bottom surface metal flats 6, it is the input/output port of antenna, there is individual circular pad 10 on the top of the other end of metallization vertical vias feeder line 6, circular pad 10 is at the center of circular hole of the end face metal flat 9 of medium substrate 4, and the vertical vias feeder line top circular pad 10 that therefore metallizes does not directly electrically contact with the end face metal flat 9 of medium substrate; Substrate integration wave-guide horn antenna 2 is comprised of bottom surface metal flat 6, end face metal flat 9 and metallization via hole loudspeaker sidewall 11, bottom surface metal flat 6 and end face metal flat 9 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom surface metal flat 6 and end face metal flat 9; The bore face 12 of horn antenna 2 from the input/output port of antenna to antenna is divided into narrow Cross-section Waveguide Using 13 and tubaeform waveguide 14 two parts; One end of narrow Cross-section Waveguide Using 13 is metallized the short circuit face 15 that via sidewall 11 short circuits form narrow Cross-section Waveguide Using, and the other end of narrow Cross-section Waveguide Using 13 and tubaeform waveguide 14 are joined, and metallization vertical vias feeder line 1 is on the center line of narrow Cross-section Waveguide Using 13 broadsides; Metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom surface metal flat 6 and end face metal flat 9, and these embedded metallization via holes 3 form intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18; Middle metallization arrays of vias 16 is positioned at the position in the middle of horn antenna two side 12, and in the both sides of middle metallization arrays of vias 16, symmetrical have left side dielectric-filled waveguide 19 and a right dielectric-filled waveguide 20; Intermediate metallization arrays of vias 16 shapes are one section of straight lines, the head end of intermediate metallization arrays of vias 16 is towards the direction of the short circuit face 15 of the narrow Cross-section Waveguide Using of horn antenna, the tail end of intermediate metallization arrays of vias 16 stretches to the bore face 12 of horn antenna, but less than bore face 12; In the dielectric-filled waveguide 19 on horn antenna 2 left sides, there is left side metallization arrays of vias 17, left side dielectric-filled waveguide 19 is divided into first medium and fills waveguide 21 and second medium filling waveguide 22; In the dielectric-filled waveguide 20 of horn antenna the right, there is the right metallization arrays of vias 18, the right dielectric-filled waveguide 20 is divided into the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24; Left side metallization arrays of vias 17 and the right metallization arrays of vias 18 shapes are all that a paragraph header end straightway connects polygon and connects one section of tail end straightway again, the head end of left side metallization arrays of vias 17 and the right metallization arrays of vias 18 all stretches to the bore face 12 of horn antenna 2 towards the tail end of direction, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 of the short circuit face 15 of the narrow Cross-section Waveguide Using of horn antenna 2, but on bore face 12, can avoid occurring on bore face 12 like this null field of electric field; Intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 form in substrate integration wave-guide horn antenna 2 that first medium is filled waveguide 21, second medium is filled waveguide 22, the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24, and first medium is filled waveguide 21, second medium and filled waveguide 22, the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 not equating or not etc. near port 25 width of antenna opening diametric plane 12.
In dielectric-filled waveguide, the field intensity amplitude distribution rule of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide port, if the width of a plurality of dielectric-filled waveguides is all the same, its main mould field intensity amplitude distribution rule just identical; If the power of these dielectric-filled waveguide inputs is all identical, the size of the field intensity amplitude on these dielectric-filled waveguide ports and distribution are all identical.From the electromagnetic wave signal of internal circuit 8, from one end of metallization vertical vias feeder line 1, the input/output port by antenna enters into substrate integration wave-guide horn antenna 2, propagate after a segment distance, run into intermediate metallization arrays of vias 16, due to symmetry, the electromagnetic wave just equal two-way of minute success rate enters respectively left side dielectric-filled waveguide 19 and 20 transmission of the right dielectric-filled waveguide.Left side dielectric-filled waveguide 19 and the right dielectric-filled waveguide 20 full symmetrics, the dielectric-filled waveguide 19 on the left side of take is example explanation, when electromagnetic wave enters after left side dielectric-filled waveguide 19 transmission after a segment distance, to run into left side metallization arrays of vias 17, being divided into two-way fills waveguide 21 and second medium by first medium respectively and fills waveguide 22 and transmit to the direction of antenna opening diametric plane 12 again, the position of polygon vertex in the position of the head end of left side metallization arrays of vias 17 and left side metallization arrays of vias 17 in the dielectric-filled waveguide 19 of the adjustment left side, can adjust the electromagnetic relative power of filling transmission in waveguide 21 and second medium filling waveguide 22 by first medium, and then adjust and by first medium, to fill waveguide 21 and second medium and fill electromagnetic wave that waveguide 22 the transmits relative amplitude on bore face 12, if filling the width of waveguide 21 and the port 25 of second medium filling waveguide 22 on antenna opening diametric plane 12, first medium equates, be adjusted at the left side metallization head end of arrays of vias 17 and the position of polygon vertex in left side dielectric-filled waveguide 19, can fill the electromagnetic power of waveguide 22 transmission and equate so that fill waveguide 21 and second medium by first medium, and make this two-way electromagnetic wave arrive the port 25 of dielectric-filled waveguide with power and then arrive again the bore face 12 of antenna, it is all the same with size with the field intensity amplitude distribution of second medium filling waveguide 22 ports 25 that near first medium antenna opening diametric plane 12 is filled waveguide 21 like this, electromagnetic wave on the right in dielectric-filled waveguide 20 transmission be also same situation.Just can be controlled in the above described manner near the electromagnetic amplitude distribution of antenna opening diametric plane 12, if near the first medium remaining on antenna opening diametric plane 12 is filled waveguide 21, second medium is filled waveguide 22, the width of the port 25 of the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 all equates, and adjust left side metallization arrays of vias 17 and the right metallization head end of arrays of vias 18 and the position of polygon vertex and make to fill waveguide 21 by first medium, second medium is filled waveguide 22, the port 25 that the 3rd dielectric-filled waveguide 23 and the electromagnetic same power of the 4th dielectric-filled waveguide 24 transmission arrive these dielectric-filled waveguides arrives antenna opening diametric plane 12 again, just can be so that first medium be filled waveguide 21 near antenna opening diametric plane 12, second medium is filled waveguide 22, the field intensity amplitude distribution of four ports 25 of the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 is all consistent, so just reach the object that improves antenna aperture efficiency and gain.Owing to being null field on loudspeaker sidewall 11 on antenna opening diametric plane 12, other region on antenna opening diametric plane 12 does not have null field in addition, and the field strength distribution of bore face 12 is also relatively more even like this.In like manner also can on the bore face 12 of antenna, realize as required specific field intensity amplitude distribution.
In technique, the three-dimension packaging skin antenna of embedded metal via hole amplitude calibration both can adopt three-dimensional resinous packaging technology, also can adopt LTCC (LTCC) technique to realize.Via hole 3 and the metallization via sidewall 11 of wherein metallizing can be that hollow metal through hole can be also solid metal hole, can be also continuous metallization wall, and the shape of metal throuth hole can be circular, can be also square or other shapes.
Structurally, according to same principle, can add again four strip metal arrays of vias four dielectric-filled waveguides are divided into eight dielectric-filled waveguides, and make the port that arrives dielectric-filled waveguide with amplitude by these eight dielectric-filled waveguide electromagnetic waves arrive again antenna opening diametric plane 12, make like this amplitude distribution on antenna opening diametric plane 12 more even, and the quantity that increases the dielectric-filled waveguide on antenna opening diametric plane 12 might not require to increase the width of antenna opening diametric plane 12 simultaneously, as long as it is just passable to guarantee that dielectric-filled waveguide can transmit main mould.Polygon in antenna left side metallization arrays of vias 17 and the right metallization arrays of vias 18 can be triangle, quadrangle, pentagon or other polygon, and the shape on these polygonal limits or many limits can be straight line, camber line or other curve; The shape of intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 cathetus sections can be straight line, broken line, exponential line etc.
According to the above, just can realize the present invention.
Claims (9)
1. the three-dimension packaging skin antenna of an embedded metal via hole amplitude calibration, it is characterized in that this antenna comprises metallization vertical vias feeder line (1), substrate integration wave-guide horn antenna (2) and the embedded metal via hole (3) being arranged on medium substrate (4), medium substrate (4) is in the top of three-dimension packaging (5), described metallization vertical vias feeder line (1) is connected with the internal circuit (8) of three-dimension packaging (5), substrate integration wave-guide horn antenna (2) by be positioned at medium substrate (4) one side bottom surface metal flat (6), be positioned at the end face metal flat (9) of medium substrate (4) another side and form with the metallization via hole loudspeaker sidewalls (11) that are connected bottom surface metal flat (6) end face metal flat (9) through medium substrate (4), substrate integration wave-guide horn antenna (2) consists of narrow Cross-section Waveguide Using (13) and tubaeform waveguide (14) serial connection, one end of narrow Cross-section Waveguide Using (13) is short circuit face (15), the other end of narrow Cross-section Waveguide Using (13) is connected with tubaeform waveguide (14), one end of tubaeform waveguide (14) is connected with narrow Cross-section Waveguide Using (13), and the other end of tubaeform waveguide (14) is antenna opening diametric plane (12), metallization via hole (3) embedded in substrate integration wave-guide horn antenna (2) connects bottom surface metal flat (6) and end face metal flat (9), and forms intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18), intermediate metallization arrays of vias (16) is shaped as straight line, be positioned at the middle position of two sidewalls (11) of substrate integration wave-guide horn antenna (2), and substrate integration wave-guide horn antenna (2) is divided into symmetrical left side dielectric-filled waveguide (19) and the right dielectric-filled waveguide (20), in the both sides of middle metallization arrays of vias (16), there are respectively left side metallization arrays of vias (17) and the right metallization arrays of vias (18), left side metallization arrays of vias (17) is to be all connected and to form with three sections of tail end straightways by head end straightway, polygon with the right metallization arrays of vias (18) shape, the head end of arrays of vias (18) is metallized all towards short circuit face (15) direction of the narrow Cross-section Waveguide Using of horn antenna in intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right, the tail end of intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) stretches to antenna opening diametric plane (12), but less than on antenna opening diametric plane (12), intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) form first medium and fill waveguide (21) in horn antenna (2), second medium is filled waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24), first medium is filled waveguide (21), second medium is filled waveguide (22), a port of the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) is all towards short circuit face (15) direction of the narrow Cross-section Waveguide Using of antenna (13), its another port (25) is concordant and close antenna opening diametric plane (12) all.
2. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, the one end that it is characterized in that described metallization vertical vias feeder line (1) is connected with the internal circuit (8) of three-dimension packaging (5) through the circular hole (7) on medium substrate (4) bottom surface metal flat (6), there is individual circular pad (10) on its other end top, metallization vertical vias feeder line top circular pad 10 is at the center of circular hole of the end face metal flat (9) of medium substrate (4), therefore the vertical vias feeder line top circular pad (10) that metallizes does not directly electrically contact with the end face metal flat (9) of medium substrate (4).
3. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, it is characterized in that described left side metallization arrays of vias (17) is divided into first medium left side dielectric-filled waveguide (19) and fills waveguide (21) and second medium filling waveguide (22), the right metallization arrays of vias (18) is divided into the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) the dielectric-filled waveguide on the right (20).
4. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, the shape that it is characterized in that the straightway in described intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) is straight line, broken line or exponential line etc., and its length is zero or finite length.
5. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, it is characterized in that described left side metallization arrays of vias (17) and the polygon in the right metallization arrays of vias (18) are triangle, quadrangle, pentagon or other polygon, the shape on a polygonal limit or many limits is straight line, camber line or other curve.
6. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, it is characterized in that described left side dielectric-filled waveguide (19), the right dielectric-filled waveguide (20), first medium is filled waveguide (21), second medium is filled waveguide (22), the width of the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) all will guarantee that its main mould can on the left side dielectric-filled waveguide (19), the right dielectric-filled waveguide (20), first medium is filled waveguide (21), second medium is filled waveguide (22), in the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24), transmit and be not cut off.
7. a kind of three-dimension packaging skin antenna of embedded metal via hole amplitude calibration according to claim 1 or 5, it is characterized in that selecting the position in head end straightway in left side metallization arrays of vias (17) or polygon on the left side dielectric-filled waveguide (19), make to fill waveguide (21) and second medium by first medium and fill the above radiation of bore face (12) that the port (25) of the two-way electromagnetic wave constant amplitude arrival dielectric-filled waveguide of transmission in waveguide (22) arrives antenna again.
8. a kind of three-dimension packaging skin antenna of embedded metal via hole amplitude calibration according to claim 1 or 5, it is characterized in that selecting head end straightway in the right metallization arrays of vias (18) or the polygon position in dielectric-filled waveguide (20) on the right, the above radiation of bore face (12) that the port (25) that makes two-way electromagnetic wave constant amplitude by transmission in the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) arrive dielectric-filled waveguide arrives antenna again.
9. the three-dimension packaging skin antenna of a kind of embedded metal via hole amplitude calibration according to claim 1, it is characterized in that forming metallization via hole loudspeaker sidewalls (11), intermediate metallization arrays of vias (16), in left side metallization arrays of vias (17) and the right metallization arrays of vias (18), the spacing of two adjacent via holes that metallize is less than or equals 1/10th of operation wavelength, make the metallization via hole loudspeaker sidewalls (11) that form, intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) can both be equivalent to electric wall.
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| US7808439B2 (en) * | 2007-09-07 | 2010-10-05 | University Of Tennessee Reserch Foundation | Substrate integrated waveguide antenna array |
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| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
| CN102723591A (en) * | 2011-03-30 | 2012-10-10 | 南京邮电大学 | Filtering antenna for microwave and millimeter wave circuit |
| CN103022676A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Amplitude impedance calibrated three-dimensional package surface antenna |
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| CN103022670A (en) | 2013-04-03 |
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