CN103022671B - Amplitude-calibrated packaging interlayer antenna - Google Patents
Amplitude-calibrated packaging interlayer antenna Download PDFInfo
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- CN103022671B CN103022671B CN201210563300.1A CN201210563300A CN103022671B CN 103022671 B CN103022671 B CN 103022671B CN 201210563300 A CN201210563300 A CN 201210563300A CN 103022671 B CN103022671 B CN 103022671B
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Abstract
The invention discloses an amplitude-calibrated packaging interlayer antenna. The amplitude-calibrated packaging interlayer antenna comprises a microstrip feeder (1), a horn antenna (2) and metalized via holes (3) which are integrated on one dielectric substrate (4), the dielectric substrate (4) is arranged on the inner layer of a three-dimensional packaging (5), one end of the microstrip feeder (1) is connected with an internal circuit via a coplanar waveguide (7) on one side of the packaging, the horn antenna (2) is formed by a bottom metal plane (9), a top metal plane (10) and a metalized via hole sidewall (11), three metalized via hole arrays are formed by the metalized via holes (3), a first dielectric fill waveguide (22), a second dielectric fill waveguide (23), a third dielectric fill waveguide (24) and a fourth dielectric fill waveguide (25) are formed in the horn antenna (2), and electromagnetic wave in the antenna can be distributed on an antenna aperture surface (12) in uniform amplitudes. By the aid of the amplitude-calibrated packaging interlayer antenna, aperture efficiency of the antenna can be improved.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of encapsulation interlayer antenna of amplitude calibration.
Background technology
Adopt monolithic three-dimensional multi-chip (3D-MCM) technology, can a radio system is integrated in a 3-D stacks encapsulation, normally antenna integrated on the surface of encapsulation, such as paster antenna is integrated in the top of encapsulation.But need sometimes integrated for antenna in a package between an interlayer to meet the needs of system.If integrated horn antenna just can realize above-mentioned requirements in the inner interlayer of encapsulation.But usual horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thus limit its application on encapsulating structure.In recent years, substrate integration wave-guide horn antenna based on substrate integrated waveguide technology development has the advantages that size is little, lightweight, be easy to Planar integration, but the gain of traditional substrate integration wave-guide horn antenna is relatively low, one of them reason is that the amplitude of electromagnetic field on bore face is very uneven, narrowing toward each end broad in the middle, affects the radiance of antenna.Existing method such as employing coated by dielectric, medium prism etc. at present, correct the asynchronous of horn mouth diametric plane phase place, but these methods all can not improve the uniformity of electromagnetic field magnitude distribution on bore face, and these phase alignment structures add the overall structure size of antenna, be not suitable for being integrated into the inner interlayer of encapsulation.
Summary of the invention
Technical problem: the object of the invention is the encapsulation interlayer antenna proposing a kind of amplitude calibration, this antenna can improve antenna opening diametric plane and to power on the uniformity of magnetic wave amplitude distribution, improves aperture efficiency and the gain of the antenna of three-dimension packaging interlayer.
Technical scheme: the encapsulation interlayer antenna package of a kind of amplitude calibration of the present invention draws together the microstrip feed line be arranged on medium substrate, substrate integration wave-guide horn antenna and embedded metal via hole, and medium substrate is at the internal layer of three-dimension packaging; Described microstrip feed line is connected with the internal circuit of three-dimension packaging by co-planar waveguide; Substrate integration wave-guide horn antenna to be connected bottom-side metal planar top surface metal flat by the bottom-side metal plane being positioned at medium substrate one side, the topside metal plane that is positioned at medium substrate another side metallization via hole trumpet side walls with through medium substrate forms; Metallization via hole embedded in substrate integration wave-guide horn antenna connects bottom-side metal plane and topside metal plane, and forms intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias; In horn antenna, there is first medium to fill waveguide, second medium fills waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide.
One end of described microstrip feed line is connected with horn antenna, and the other end of microstrip feed line, near package side surface, is the input/output port of antenna; Microstrip feed line is connected by antenna input/output port one end with the co-planar waveguide of package side surface, and the other end of co-planar waveguide is connected with encapsulation internal circuit.
Described substrate integration wave-guide horn antenna is connected in series by narrow Cross-section Waveguide Using, tubaeform waveguide and wide Cross-section Waveguide Using and forms; One end of narrow Cross-section Waveguide Using is microstrip feed line, the other end of narrow Cross-section Waveguide Using is connected with tubaeform waveguide, one end of tubaeform waveguide is connected with narrow Cross-section Waveguide Using, and the other end of tubaeform waveguide is connected with wide Cross-section Waveguide Using, and the other end of wide Cross-section Waveguide Using is antenna opening diametric plane.
Described intermediate metallization arrays of vias is positioned at the position in the middle of two sidewalls of substrate integration wave-guide horn antenna, and the head end of intermediate metallization arrays of vias is towards microstrip feed line direction, and the tail end of intermediate metallization arrays of vias is on antenna opening diametric plane; Intermediate metallization arrays of vias is divided into symmetrical two parts substrate integration wave-guide horn antenna, and in the both sides of the metallization arrays of vias of centre, symmetrical has left side dielectric-filled waveguide and the right dielectric-filled waveguide.
Described left side metallization arrays of vias is divided into first medium left side dielectric-filled waveguide and fills waveguide and second medium filling waveguide, and the right metallization arrays of vias is divided into the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide the dielectric-filled waveguide on the right.
Described left side metallization arrays of vias and the right metallization arrays of vias shape are all to be connected with tail end straightway three sections by head end straightway, polygon to form, the head end of left side metallization arrays of vias and the right metallization arrays of vias is all towards microstrip feed line direction, and the tail end of left side metallization arrays of vias and the right metallization arrays of vias is on antenna opening diametric plane.
The shape of straightway in described intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias can be straight line, broken line or exponential line etc., and its length can be zero or finite length.
The polygon metallized in arrays of vias in described left side metallization arrays of vias and the right can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
Described left side dielectric-filled waveguide and the width of the right dielectric-filled waveguide all will ensure that its main mould can transmission and not being cut off in these dielectric-filled waveguides.
Described first medium fills waveguide, second medium fills waveguide, the width of the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all will ensure that its main mould can fill waveguide at first medium, second medium is filled transmission in waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide and is not cut off.
The spacing of two adjacent metallization via holes will be equal to or less than 1/10th of operation wavelength, makes the metallization arrays of vias formed can be equivalent to electric wall.
In dielectric-filled waveguide, the field intensity amplitude distribution rule of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide port, if the width of multiple dielectric-filled waveguide is all the same, its main mould field intensity amplitude distribution rule just identical; If these dielectric-filled waveguides input power be all identical, then the field intensity amplitude size on these dielectric-filled waveguide ports and distribution all identical.The co-planar waveguide of electromagnetic wave signal through three-dimension packaging side from encapsulation internal circuit enters antenna input/output port, substrate integration wave-guide horn antenna is entered into again by microstrip feed line, after propagating a segment distance to the direction, bore face of antenna, run into middle metallization arrays of vias, the two-way that just point success rate is equal enters the dielectric-filled waveguide transmission of two, left and right respectively.Two the dielectric-filled waveguide full symmetrics in left and right, illustrate for the dielectric-filled waveguide on the left side.After electromagnetic wave enters the dielectric-filled waveguide transmission on the left side after a segment distance, the arrays of vias that metallizes will be run into, then be divided into two-way and transmitted to bore face by dielectric-filled waveguide; The position of polygon vertex in the position of this metallization arrays of vias head end of dielectric-filled waveguide on the adjustment left side and metallization arrays of vias, can make by the electromagnetic power of these two dielectric-filled waveguides transmission equal; Transmitting in electromagnetic wave dielectric-filled waveguide on the right is also same situation.Just can control to power at antenna opening diametric plane the amplitude distribution of magnetic wave in the above described manner, if the port width remaining on four dielectric-filled waveguides on antenna opening diametric plane is equal, and the adjustment metallization head end of arrays of vias and the position of polygon vertex make to arrive antenna opening diametric plane by these four electromagnetic same power of dielectric-filled waveguide transmission, the field intensity amplitude distribution on antenna opening diametric plane just can be made consistent, so just can reach and improve the aperture efficiency of antenna and the object of gain.In like manner also can realize specific field intensity amplitude distribution as required on the bore face of antenna.
Beneficial effect: the beneficial effect of the encapsulation interlayer antenna of amplitude calibration of the present invention is, make antenna opening diametric plane power on magnetic wave amplitude distribution evenly, thus to improve in the aperture efficiency of three-dimension packaging interlayer antenna and gain.
Accompanying drawing explanation
Fig. 1 is the three-dimension packaging overall structure schematic diagram of the encapsulation interlayer antenna of amplitude calibration.
Fig. 2 is the encapsulation interlayer antenna face structural representation of amplitude calibration.
Fig. 3 is the encapsulation interlayer antenna inverse layer structure schematic diagram of amplitude calibration.
Have in figure: microstrip feed line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, antenna input/output port 6, co-planar waveguide 7, internal circuit 8, bottom-side metal plane 9, topside metal plane 10, metallization via hole trumpet side walls 11, the bore face 12 of antenna, the narrow Cross-section Waveguide Using 13 of antenna, the tubaeform waveguide 14 of antenna, the wide Cross-section Waveguide Using 15 of antenna, ground plane 16, intermediate metallization arrays of vias 17, left side metallization arrays of vias 18, the right metallization arrays of vias 19, left side dielectric-filled waveguide 20, the right dielectric-filled waveguide 21, first medium fills waveguide 22, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Embodiment of the present invention is: the encapsulation interlayer antenna of amplitude calibration is made up of microstrip feed line 1, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three part, this three part is all integrated on same medium substrate 4, and this medium substrate is positioned at the internal layer of 4 3-dimensional multi-layered encapsulation 5; One termination substrate integration wave-guide horn antenna 2 of microstrip feed line 1, microstrip feed line 1 other end is near package side surface, it is the input/output port 6 of antenna, the input/output port 6 of antenna is spent to cross by micro-band and co-planar waveguide 90 and is connected with the co-planar waveguide 7 of package side surface, and the other end of co-planar waveguide 7 is connected with encapsulation internal circuit 8; Substrate integration wave-guide horn antenna 2 is made up of bottom-side metal plane 9, topside metal plane 10 and metallization via hole trumpet side walls 11, bottom-side metal plane 9 and topside metal plane 10 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom-side metal plane 9 and topside metal plane 10; The inside of horn antenna 2 is by narrow Cross-section Waveguide Using 13, and tubaeform waveguide 14 and wide Cross-section Waveguide Using 15 3 part serial connection form; One termination microstrip feed line 1 of horn antenna 2, bottom-side metal plane 9 is connected with the ground plane 16 of microstrip feed line 1, the other end of horn antenna 2 is bore faces 12 of antenna, metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom-side metal plane 9 and topside metal plane 10, and these embedded metallization via holes 3 form intermediate metallization arrays of vias 17, left side metallization arrays of vias 18 and the right metallization arrays of vias 19; Middle metallization arrays of vias 17 is positioned at the position in the middle of horn antenna two side 11, and in the both sides of the metallization arrays of vias 17 of centre, symmetrical has left side dielectric-filled waveguide 20 and the right dielectric-filled waveguide 21; Intermediate metallization arrays of vias 17 shape is one section of straightway, and the head end of intermediate metallization arrays of vias 17 is towards the direction of microstrip feed line 1, and the tail end of intermediate metallization arrays of vias 17 reaches the bore face 12 of horn antenna; In the dielectric-filled waveguide 20 on horn antenna 2 left side, there is left side metallization arrays of vias 18, left side dielectric-filled waveguide 20 is divided into first medium and fills waveguide 22 and second medium filling waveguide 23; On the right of horn antenna in dielectric-filled waveguide 21, there is the arrays of vias 19 that metallizes, the right dielectric-filled waveguide 21 is divided into the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25; Left side metallization arrays of vias 18 and the right metallization arrays of vias 19 shape are all that a paragraph header end straightway connects polygon and connects one section of tail end straightway again, the head end of left side metallization arrays of vias 18 and the right metallization arrays of vias 19 all towards the direction of microstrip feed line 1, the tail end of left side metallization arrays of vias 18 and the right metallization arrays of vias 19 is on the bore face 12 of horn antenna 2; Intermediate metallization arrays of vias 17, left side metallization arrays of vias 18 and the right metallization arrays of vias 19 form four dielectric-filled waveguides in antenna 2, and namely first medium fills waveguide 22, second medium fills waveguide 23, the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25.
In dielectric-filled waveguide, the field intensity amplitude distribution rule of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide port, if the width of multiple dielectric-filled waveguide is all the same, its main mould field intensity amplitude distribution rule just identical; If these dielectric-filled waveguides input power be all identical, then the field intensity amplitude size on these dielectric-filled waveguide ports and distribution all identical.The co-planar waveguide 7 of electromagnetic wave signal through three-dimension packaging 5 side from encapsulation internal circuit 8 enters antenna input/output port 6, substrate integration wave-guide horn antenna 2 is entered into again by microstrip feed line 1, after propagating a segment distance, run into intermediate metallization arrays of vias 17, due to symmetry, the electromagnetic wave two-way that just point success rate is equal enters left side dielectric-filled waveguide 20 respectively and the right dielectric-filled waveguide 21 transmits.Left side dielectric-filled waveguide 20 and the right dielectric-filled waveguide 21 full symmetric, for dielectric-filled waveguide 20 explanation on the left side, when electromagnetic wave enter left side dielectric-filled waveguide 20 transmit after after a segment distance, left side metallization arrays of vias 18 will be run into, be divided into two-way again to transmit to the direction of antenna opening diametric plane 12 respectively by first medium filling waveguide 22 and second medium filling waveguide 23, the position of polygon vertex in the position of the head end of the arrays of vias 18 that metallizes in adjustment left side dielectric-filled waveguide 20 and metallization arrays of vias 18, can ensure that the electromagnetic power of being filled waveguide 22 and second medium filling waveguide 23 transmission by first medium is equal, it is also same situation that electromagnetic wave transmits in dielectric-filled waveguide 21 on the right.Just can control the electromagnetic amplitude distribution on antenna opening diametric plane 12 in the above described manner, if the first medium remained on antenna opening diametric plane 12 fills waveguide 22, second medium fills waveguide 23, the port width of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 is all equal, and adjust the left side metallization arrays of vias 18 and the right metallization the head end of arrays of vias 19 and the position of polygon vertex make by first medium fill waveguide 22, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 transmit electromagnetic same power and arrive antenna opening diametric plane 12, first medium on antenna opening diametric plane 12 just can be made to fill waveguide 22, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 is all consistent with the field intensity amplitude distribution on four ports of the 4th dielectric-filled waveguide 25, so just reach the object improving antenna aperture efficiency and gain.In like manner also can realize specific field intensity amplitude distribution as required on the bore face 12 of antenna.
In technique, the encapsulation interlayer antenna of amplitude calibration both can adopt three-dimensional resinous packaging technology, and LTCC (LTCC) technique also can be adopted to realize.The via hole 3 that wherein metallizes can be hollow metal through hole with metallization via sidewall 11 also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, four strip metal arrays of vias can be added again four dielectric-filled waveguides are divided into eight dielectric-filled waveguides, and make to arrive antenna opening diametric plane 12 by these eight dielectric-filled waveguide electromagnetic waves with amplitude, make the amplitude distribution on antenna opening diametric plane 12 more even like this, and the quantity of the dielectric-filled waveguide increased on antenna opening diametric plane 12 might not require the width increasing antenna opening diametric plane 12 simultaneously, as long as it is just passable to ensure that dielectric-filled waveguide can transmit main mould.The polygon metallized in arrays of vias 19 in antenna left side metallization arrays of vias 18 and the right can be triangle, quadrangle, pentagon or other polygon, and the shape on these polygonal limits or many limits can be straight line, camber line or other curve; The shape of the straightway in intermediate metallization arrays of vias 17, left side metallization arrays of vias 18 and the right metallization arrays of vias 19 can be straight line, broken line, exponential line etc.
According to the above, just the present invention can be realized.
Claims (6)
1. the encapsulation interlayer antenna of an amplitude calibration, it is characterized in that this antenna comprises the microstrip feed line (1) be arranged on medium substrate (4), substrate integration wave-guide horn antenna (2) and embedded metal via hole (3), medium substrate (4) internal layer in three-dimension packaging (5); Described microstrip feed line (1) is connected with three-dimension packaging (5) internal circuit (8) by co-planar waveguide (7); Substrate integration wave-guide horn antenna (2) by be positioned at medium substrate (4) one side bottom-side metal plane (9), be positioned at medium substrate (4) another side topside metal plane (10) and be connected bottom-side metal plane (9) through medium substrate (4), the metallization via hole trumpet side walls (11) of topside metal plane (10) forms; In substrate integration wave-guide horn antenna (2), embedded metal via hole (3) connects bottom-side metal plane (9) and topside metal plane (10), and forms intermediate metallization arrays of vias (17), left side metallization arrays of vias (18) and the right metallization arrays of vias (19); Intermediate metallization arrays of vias (17) shape is straight line, is positioned at the position that two sidewalls (11) of substrate integration wave-guide horn antenna (2) are middle; The head end of intermediate metallization arrays of vias (17) is towards microstrip feed line (1) direction, and the tail end of intermediate metallization arrays of vias (17) is on antenna opening diametric plane (12); Intermediate metallization arrays of vias (17) is divided into symmetrical left side dielectric-filled waveguide (20) and the right dielectric-filled waveguide (21) substrate integration wave-guide horn antenna (2); Left side metallization arrays of vias (18) is divided into first medium left side dielectric-filled waveguide (20) and fills waveguide (22) and second medium filling waveguide (23); The right metallization arrays of vias (19) is divided into the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) the right dielectric-filled waveguide (21); Left side metallization arrays of vias (18) and the right arrays of vias (19) shape that metallizes is all to be connected successively with end section three sections by head portion, polygon to form, the head end on left side metallization arrays of vias (18) and the right metallization arrays of vias (19) is all towards microstrip feed line (1) direction, and the tail end on left side metallization arrays of vias (18) and the right metallization arrays of vias (19) is on antenna opening diametric plane (12);
Described left side metallization arrays of vias (18) and the right metallize head portion in arrays of vias (19), end section shape be straight line, broken line or exponential line;
The polygon that described left side metallization arrays of vias (18) and the right polygon metallized in arrays of vias (19) can be triangles, quadrangle, pentagon or other limit number are greater than five.
2. the encapsulation interlayer antenna of a kind of amplitude calibration according to claim 1, it is characterized in that one end of described microstrip feed line (1) is connected with horn antenna (2), the other end of microstrip feed line (1), near package side surface, is the input/output port (6) of antenna; Microstrip feed line (1) is connected by antenna input/output port (6) one end with the co-planar waveguide (7) of package side surface, the other end of co-planar waveguide (7) with
three-dimensionalencapsulation
(5)internal circuit (8) is connected.
3. the encapsulation interlayer antenna of a kind of amplitude calibration according to claim 1, is characterized in that described substrate integration wave-guide horn antenna (2) is connected in series by narrow Cross-section Waveguide Using (13), tubaeform waveguide (14) and wide Cross-section Waveguide Using (15) and forms; One end of narrow Cross-section Waveguide Using (13) is microstrip feed line (1), the other end of narrow Cross-section Waveguide Using (13) is connected with tubaeform waveguide (14), one end of tubaeform waveguide (14) is connected with narrow Cross-section Waveguide Using (13), the other end of tubaeform waveguide (14) is connected with wide Cross-section Waveguide Using (15), and the other end of wide Cross-section Waveguide Using (15) is antenna opening diametric plane (12).
4. the encapsulation interlayer antenna of a kind of amplitude calibration according to claim 1, is characterized in that the width of described left side dielectric-filled waveguide (20) and the right dielectric-filled waveguide (21) all will ensure that its main mould is passable
?transmission in these dielectric-filled waveguides (16) and (17) and not being cut off.
5. the encapsulation interlayer antenna of a kind of amplitude calibration according to claim 1, is characterized in that the width of described first medium filling waveguide (22), second medium filling waveguide (23), the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) all will ensure that its main mould can fill waveguide (22) at first medium, second medium is filled transmission in waveguide (23), the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) and is not cut off.
6. the encapsulation interlayer antenna of a kind of amplitude calibration according to claim 1, it is characterized in that in described intermediate metallization arrays of vias (17), left side metallization arrays of vias (18) and the right metallization arrays of vias (19), the spacing of two adjacent metallization via hole (3) will be equal to or less than 1/10th of operation wavelength, makes the intermediate metallization arrays of vias (17) of formation, left side metallization arrays of vias (18) and the right metallization arrays of vias (19) can be equivalent to electric wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210563300.1A CN103022671B (en) | 2012-12-21 | 2012-12-21 | Amplitude-calibrated packaging interlayer antenna |
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| CN201210563300.1A CN103022671B (en) | 2012-12-21 | 2012-12-21 | Amplitude-calibrated packaging interlayer antenna |
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| CN103022671A CN103022671A (en) | 2013-04-03 |
| CN103022671B true CN103022671B (en) | 2015-04-15 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104716435A (en) * | 2015-03-30 | 2015-06-17 | 东南大学 | Encapsulation interlayer antenna capable of achieving gap amplitude calibration |
| CN104733833A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Package interlayer antenna with calibrated gap embedment amplitude |
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