CN103022672B - Package sandwich antenna for phase amplitude calibration - Google Patents
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- CN103022672B CN103022672B CN201210563336.XA CN201210563336A CN103022672B CN 103022672 B CN103022672 B CN 103022672B CN 201210563336 A CN201210563336 A CN 201210563336A CN 103022672 B CN103022672 B CN 103022672B
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Abstract
The invention relates to a horn antenna, in particular to a package sandwich antenna for phase amplitude calibration. The antenna comprises a micro-strip feeder (1), a horn antenna (2) and plated-through holes (3) which are integrated on a dielectric substrate (4), the dielectric substrate (4) is disposed in an inner layer of a three-dimensional package (5), one end of the micro-strip feeder (1) is connected with an internal circuit (8) via a coplanar waveguide (7) on the side face of the package, the horn antenna (2) is composed of a bottom metal plane (9), a top metal plane (10) and plated-through hole side walls (11), a middle plated-through hole array (16), a left plated-through hole array (17) and a right plated-through hole array (18) which are composed of the plated-through holes (3) form four dielectric-filled waveguides in the horn antenna (2), and one ends of the four dielectric-filled waveguides face the micro-strip feeder (1) while the other ends of the four dielectric-filled waveguides are positioned on an antenna aperture surface (12). The antenna is capable of increasing antenna gain.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of encapsulation interlayer antenna of phase amplitude calibration.
Background technology
Adopt monolithic three-dimensional multi-chip (3D-MCM) technology, a radio system can be integrated in a 3-D stacks encapsulation, also need antenna to be integrated in encapsulation for this reason.Normally antenna integrated on the surface of encapsulation, such as paster antenna is integrated in the top of encapsulation.But need sometimes integrated for antenna in a package between an interlayer to meet the needs of system.If integrated horn antenna just can realize above-mentioned requirements in the inner interlayer of encapsulation.But usual horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thus limit its application on encapsulating structure.In recent years, substrate integration wave-guide horn antenna based on substrate integrated waveguide technology development has the advantages that size is little, lightweight, be easy to Planar integration, but the gain of traditional substrate integration wave-guide horn antenna is relatively low, its reason is because horn mouth constantly opens, Electromagnetic Wave Propagation is caused to occur that phase place is asynchronous to during horn mouth diametric plane, the PHASE DISTRIBUTION of bore electric field strength is uneven, radiation directivity and gain reduction; On bore face, the amplitude of electromagnetic field is also very uneven in addition, narrowing toward each end broad in the middle, and this also affects the radiance of antenna.Existing method such as employing coated by dielectric, medium prism etc. at present, correct the asynchronous of horn mouth diametric plane phase place, but these methods all can not improve the inconsistent of horn antenna and free space wave impedance on bore face, can not improve the uniformity of electromagnetic field magnitude distribution on bore face
And these phase alignment structures add the overall structure size of antenna, be not suitable for being integrated into the inner interlayer of encapsulation.
Summary of the invention
Technical problem: the object of the invention is the encapsulation interlayer antenna proposing a kind of phase amplitude calibration, this inner antenna is embedded with the uneven of metallization arrays of vias, amplitude inconsistent in order to electromagnetic phase place on RECTIFYING ANTENNA bore face, improves aperture efficiency and the gain of interlayer antenna.
Technical scheme: the encapsulation interlayer antenna package of a kind of phase amplitude calibration of the present invention draws together the microstrip feed line be arranged on medium substrate, substrate integration wave-guide horn antenna and embedded metal via hole, and medium substrate is at the internal layer of three-dimension packaging; Described microstrip feed line is connected with the internal circuit of three-dimension packaging by co-planar waveguide; Substrate integration wave-guide horn antenna to be connected bottom-side metal planar top surface metal flat by the bottom-side metal plane being positioned at medium substrate one side, the topside metal plane that is positioned at medium substrate another side metallization via hole trumpet side walls with through medium substrate forms; Metallization via hole embedded in substrate integration wave-guide horn antenna connects bottom-side metal plane and topside metal plane, and forms intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias; In substrate integration wave-guide horn antenna, there is first medium to fill waveguide, second medium fills waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide, first medium fills waveguide, second medium fills waveguide, a port of the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all towards microstrip feed line direction, its another port is all at antenna opening diametric plane.
One end of described microstrip feed line is connected with horn antenna, and the other end of microstrip feed line, near package side surface, is the input/output port of antenna; Microstrip feed line is connected by antenna input/output port one end with the co-planar waveguide of package side surface, and the other end of co-planar waveguide is connected with encapsulation internal circuit.
Described intermediate metallization arrays of vias is positioned at the position in the middle of two sidewalls of substrate integration wave-guide horn antenna, and substrate integration wave-guide horn antenna is divided into symmetrical two parts, in the both sides of the metallization arrays of vias of centre, symmetrical has left side dielectric-filled waveguide and the right dielectric-filled waveguide.
Described left side metallization arrays of vias is divided into first medium left side dielectric-filled waveguide and fills waveguide and second medium filling waveguide, and the right metallization arrays of vias is divided into the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide the dielectric-filled waveguide on the right.
Described intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias shape are all to be connected with tail end straightway three sections by head end straightway, polygon to form, the head end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias is all towards microstrip feed line direction, and the tail end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias reaches on antenna opening diametric plane.
Head end straightway in described intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias or the shape of tail end straightway can be straight line, broken line or exponential line etc., and its length can be zero or finite length; Polygon in intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
Described left side dielectric-filled waveguide and the width of the right dielectric-filled waveguide all will ensure that its main mould can transmission and not being cut off in these dielectric-filled waveguides.
Described first medium fills waveguide, second medium fills waveguide, the width of the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all will ensure that its main mould can fill waveguide at first medium, second medium is filled transmission in waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide and is not cut off.
Select the position of polygon vertex in intermediate metallization arrays of vias and the position in head end straightway in selection left side metallization arrays of vias or polygon on the left side dielectric-filled waveguide, can make to be filled on the bore face of the two-way electromagnetic wave constant amplitude homophase arrival antenna transmitted in waveguide by first medium filling waveguide and second medium.
Selecting the position of polygon vertex in intermediate metallization arrays of vias and select the position on the right in dielectric-filled waveguide of head end straightway or polygon in the right metallization arrays of vias, the two-way electromagnetic wave constant amplitude homophase by transmitting in the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide can being made to arrive on the bore face of antenna.
In metallization via hole trumpet side walls, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls formed can be equivalent to electric wall; The spacing of two adjacent metallization via holes will be equal to or less than 1/10th of operation wavelength, makes intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias formed can be equivalent to electric wall.
In dielectric-filled waveguide, the propagation phase velocity of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the propagation phase velocity of main mould is lower; Otherwise the width of dielectric-filled waveguide is narrower, the propagation phase velocity of main mould is higher.The co-planar waveguide of electromagnetic wave signal through three-dimension packaging side from encapsulation internal circuit enters antenna input/output port, substrate integration wave-guide horn antenna is entered into again by microstrip feed line, after propagating a segment distance to the direction, bore face of antenna, run into middle metallization arrays of vias, the two-way that just point success rate is equal enters the dielectric-filled waveguide transmission of two, left and right respectively.Two the dielectric-filled waveguide full symmetrics in left and right, illustrate for the dielectric-filled waveguide on the left side.After electromagnetic wave enters the dielectric-filled waveguide transmission on the left side after a segment distance, the arrays of vias that metallizes will be run into, then be divided into two-way and transmitted to bore face by dielectric-filled waveguide; Adjust the position of polygon vertex in intermediate metallization arrays of vias, adjust the position of polygon vertex in the position of this metallization arrays of vias head end of dielectric-filled waveguide on the left side and metallization arrays of vias, can change relative phase velocity and the relative power of this two-way electromagnetic transmission, and then adjustment is by relative phase on antenna opening diametric plane of the electromagnetic wave of two dielectric-filled waveguides transmission and relative amplitude; If the port width of these two dielectric-filled waveguides on antenna opening diametric plane is equal, adjust the left side metallization head end of arrays of vias and the position of polygon vertex in the position of polygon vertex in intermediate metallization arrays of vias, adjustment on the left side dielectric-filled waveguide, can make by the electromagnetic power of two dielectric-filled waveguide transmission equal, also make this two-way electromagnetic wave homophase arrive the bore face of antenna simultaneously; Transmitting in electromagnetic wave dielectric-filled waveguide on the right is also same situation.Just can control in the above described manner to power on the amplitude of magnetic wave and PHASE DISTRIBUTION at antenna opening diametric plane, if the port width remaining on four dielectric-filled waveguides on antenna opening diametric plane is equal, and the adjustment metallization head end of arrays of vias and the position of polygon vertex make to arrive antenna opening diametric plane by these four electromagnetic same power homophases of dielectric-filled waveguide transmission, the field intensity phase place on antenna opening diametric plane just can be made all consistent with amplitude distribution, so just can improve the aperture efficiency of antenna and the object of gain.In like manner also can realize specific field intensity amplitude and PHASE DISTRIBUTION as required on the bore face of antenna.
Beneficial effect: the beneficial effect of the encapsulation interlayer antenna of phase amplitude calibration of the present invention is, improves antenna opening diametric plane and to power on the phase place of magnetic wave and the consistency of amplitude, thus improve gain and the aperture efficiency of interlayer antenna.
Accompanying drawing explanation
Fig. 1 is the three-dimension packaging overall structure schematic diagram of the encapsulation interlayer antenna of phase amplitude calibration.
Fig. 2 is the encapsulation interlayer antenna face structural representation of phase amplitude calibration.
Fig. 3 is the encapsulation interlayer antenna inverse layer structure schematic diagram of phase amplitude calibration.
Have in figure: microstrip feed line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, antenna input/output port 6, co-planar waveguide 7, internal circuit 8, bottom-side metal plane 9, topside metal plane 10, metallization via hole trumpet side walls 11, the bore face 12 of antenna, the narrow Cross-section Waveguide Using 13 of antenna, the tubaeform waveguide 14 of antenna, ground plane 15, intermediate metallization arrays of vias 16, left side metallization arrays of vias 17, the right metallization arrays of vias 18, left side dielectric-filled waveguide 19, the right dielectric-filled waveguide 20, first medium fills waveguide 21, second medium fills waveguide 22, 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Embodiment of the present invention is: the encapsulation interlayer antenna of phase amplitude calibration is made up of microstrip feed line 1, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three part, this three part is all integrated on same medium substrate 4, and this medium substrate is positioned at the internal layer of 4 3-dimensional multi-layered encapsulation 5; One termination substrate integration wave-guide horn antenna 2 of microstrip feed line 1, microstrip feed line 1 other end is near package side surface, it is the input/output port 6 of antenna, the input/output port 6 of antenna is spent to cross by micro-band and co-planar waveguide 90 and is connected with the co-planar waveguide 7 of package side surface, and the other end of co-planar waveguide 7 is connected with encapsulation internal circuit 8; Substrate integration wave-guide horn antenna 2 is made up of bottom-side metal plane 9, topside metal plane 10 and metallization via hole trumpet side walls 11, bottom-side metal plane 9 and topside metal plane 10 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom-side metal plane 9 and topside metal plane 10; The inside of horn antenna 2 is connected in series by narrow Cross-section Waveguide Using 13 and tubaeform waveguide 14 two parts and forms; One termination microstrip feed line 1 of horn antenna 2, bottom-side metal plane 9 is connected with the ground plane 15 of microstrip feed line 1, the other end of horn antenna 2 is bore faces 12 of antenna, metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom-side metal plane 9 and topside metal plane 10, and these embedded metallization via holes 3 form intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18; Middle metallization arrays of vias 16 is positioned at the position in the middle of horn antenna two side 11, and in the both sides of the metallization arrays of vias 16 of centre, symmetrical has left side dielectric-filled waveguide 19 and the right dielectric-filled waveguide 20; Intermediate metallization arrays of vias 16 shape is that a paragraph header end straightway connects polygon and connects one section of tail end straightway again, the head end of intermediate metallization arrays of vias 16 is towards the direction of microstrip feed line 1, and the tail end of intermediate metallization arrays of vias 16 reaches the bore face 12 of horn antenna; In the dielectric-filled waveguide 19 on horn antenna 2 left side, there is left side metallization arrays of vias 17, left side dielectric-filled waveguide 19 is divided into first medium and fills waveguide 21 and second medium filling waveguide 22; On the right of horn antenna in dielectric-filled waveguide 20, there is the right metallization arrays of vias 18, the right dielectric-filled waveguide 20 is divided into the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24; Left side metallization arrays of vias 17 and the right metallization arrays of vias 18 shape are all that a paragraph header end straightway connects polygon and connects one section of tail end straightway again, the head end of left side metallization arrays of vias 17 and the right metallization arrays of vias 18 all towards the direction of microstrip feed line 1, the tail end of left side metallization arrays of vias 17 and the right metallization arrays of vias 18 is on the bore face 12 of horn antenna 2; Intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 form four dielectric-filled waveguides in the horn antenna 2 of antenna 2, and namely first medium fills waveguide 21, second medium fills waveguide 22, the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24.
In dielectric-filled waveguide, the phase velocity of the propagation of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the transmission phase velocity of main mould is lower; Otherwise dielectric-filled waveguide width is narrower, the transmission phase velocity of main mould is higher.The co-planar waveguide 7 of electromagnetic wave signal through three-dimension packaging 5 side from encapsulation internal circuit 8 enters antenna input/output port 6, substrate integration wave-guide horn antenna 2 is entered into again by microstrip feed line 1, after propagating a segment distance, run into intermediate metallization arrays of vias 16, due to symmetry, the electromagnetic wave two-way that just point success rate is equal enters left side dielectric-filled waveguide 19 respectively and the right dielectric-filled waveguide 20 transmits.Left side dielectric-filled waveguide 19 and the right dielectric-filled waveguide 20 full symmetric, for dielectric-filled waveguide 19 explanation on the left side, when electromagnetic wave enter left side dielectric-filled waveguide 19 transmit after after a segment distance, left side metallization arrays of vias 17 will be run into, be divided into two-way again to transmit to the direction of antenna opening diametric plane 12 respectively by first medium filling waveguide 21 and second medium filling waveguide 22, the position of polygon vertex in adjustment intermediate metallization arrays of vias 16, the position of polygon vertex in the position of the head end of left side metallization arrays of vias 17 and left side metallization arrays of vias 17 in adjustment left side dielectric-filled waveguide 19, electromagnetic relative phase velocity and the relative power of being filled transmission in waveguide 22 by first medium filling waveguide 21 and second medium can be adjusted, and then adjustment is filled waveguide 21 and second medium by first medium and is filled relative phase on bore face 12 of electromagnetic wave that waveguide 22 transmits and relative amplitude, if the port width of first medium filling waveguide 21 and second medium filling waveguide 22 is equal on antenna opening diametric plane 12, the position of polygon vertex in adjustment intermediate metallization arrays of vias 16, the left side metallization head end of arrays of vias 17 and the position of polygon vertex in adjustment on the left side dielectric-filled waveguide 19, the electromagnetic power of being filled waveguide 21 and second medium filling waveguide 22 transmission by first medium can be made equal, and make this two-way electromagnetic wave homophase arrive the bore face 12 of antenna, it is all the same with phase place with the field intensity amplitude distribution on second medium filling waveguide 22 port that first medium like this on antenna opening diametric plane 12 fills waveguide 21, it is also same situation that electromagnetic wave transmits in dielectric-filled waveguide 20 on the right.Just can control the electromagnetic amplitude on antenna opening diametric plane 12 and PHASE DISTRIBUTION in the above described manner, if remain on first medium on antenna opening diametric plane 12 to fill waveguide 21, second medium fills waveguide 22, the port width of the 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 is all equal, and adjust intermediate metallization arrays of vias 16, the left side metallization arrays of vias 17 and the right metallization the head end of arrays of vias 18 and the position of polygon vertex make by first medium fill waveguide 21, second medium fills waveguide 22, 3rd dielectric-filled waveguide 23 and the 4th dielectric-filled waveguide 24 transmit electromagnetic same power homophase and arrive antenna opening diametric plane 12, first medium on antenna opening diametric plane 12 just can be made to fill waveguide 21, second medium fills waveguide 22, 3rd dielectric-filled waveguide 23 is all consistent with amplitude distribution with the field intensity phase place on four ports of the 4th dielectric-filled waveguide 24, so just reach the object improving antenna aperture efficiency and gain.In like manner also can realize specific field intensity amplitude and PHASE DISTRIBUTION as required on the bore face 12 of antenna.
In technique, the encapsulation interlayer antenna of phase amplitude calibration both can adopt three-dimensional resinous packaging technology, and LTCC (LTCC) technique also can be adopted to realize.The via hole 3 that wherein metallizes can be hollow metal through hole with metallization via sidewall 11 also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, four strip metal arrays of vias can be added again four dielectric-filled waveguides are divided into eight dielectric-filled waveguides, and make to arrive antenna opening diametric plane 12 by these eight dielectric-filled waveguide electromagnetic waves with same magnitude, the amplitude distribution while of such on antenna opening diametric plane 12 is more even, and the quantity of the dielectric-filled waveguide increased on antenna opening diametric plane 12 might not require the width increasing antenna opening diametric plane 12 simultaneously, as long as it is just passable to ensure that dielectric-filled waveguide can transmit main mould.Due to the metallization via sidewall 11 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 12 is far away, therefore relative to from the dielectric-filled waveguide away from metallization via sidewall 11, from the width relative narrower of dielectric-filled waveguide close to metallization via sidewall 11 to obtain higher electromagnetic transmission phase velocity.Polygon in antenna intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 can be triangle, quadrangle, pentagon or other polygon, and the shape on these polygonal limits or many limits can be straight line, camber line or other curve; Head end straightway in intermediate metallization arrays of vias 16, left side metallization arrays of vias 17 and the right metallization arrays of vias 18 and the shape of tail end straightway can be straight line, broken line, exponential line or other curve.
According to the above, just the present invention can be realized.
Claims (6)
1. the encapsulation interlayer antenna of a phase amplitude calibration, it is characterized in that this antenna comprises the microstrip feed line (1) be arranged on medium substrate (4), substrate integration wave-guide horn antenna (2) and embedded metal via hole (3), medium substrate (4) internal layer in three-dimension packaging (5); Described microstrip feed line (1) is connected with three-dimension packaging (5) internal circuit (8) by co-planar waveguide (7); Substrate integration wave-guide horn antenna (2) by be positioned at medium substrate (4) one side bottom-side metal plane (9), be positioned at medium substrate (4) another side topside metal plane (10) and be connected bottom-side metal plane (9) through medium substrate (4), the metallization via hole trumpet side walls (11) of topside metal plane (10) forms; In substrate integration wave-guide horn antenna (2), embedded metal via hole (3) connects bottom-side metal plane (9) and topside metal plane (10), and forms intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18); Intermediate metallization arrays of vias (16) is positioned at the position in the middle of two sidewalls (11) of substrate integration wave-guide horn antenna (2), and substrate integration wave-guide horn antenna (2) is divided into symmetrical left side dielectric-filled waveguide (19) and the right dielectric-filled waveguide (20); Left side metallization arrays of vias (17) is divided into first medium left side dielectric-filled waveguide (19) and fills waveguide (21) and second medium filling waveguide (22); The right metallization arrays of vias (18) is divided into the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) the dielectric-filled waveguide on the right (20); First medium fills waveguide (21), second medium fills waveguide (22), a port of the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) all towards microstrip feed line (1) direction, its another port is all in antenna opening diametric plane (12);
Described intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right metallization arrays of vias (18) shape are all by head end straightway, polygon and tail end straightway three sections are connected formation successively, intermediate metallization arrays of vias (16), the head end on left side metallization arrays of vias (17) and the right metallization arrays of vias (18) is all towards microstrip feed line (1) direction, intermediate metallization arrays of vias (16), the tail end on left side metallization arrays of vias (17) and the right metallization arrays of vias (18) reaches on antenna opening diametric plane (12),
Position and the position selected in the middle head end straightway in left side metallization arrays of vias (17) or polygon on the left side dielectric-filled waveguide (19) of the middle polygon vertex of selection intermediate metallization arrays of vias (16), can make the two-way electromagnetic wave constant amplitude homophase of being filled waveguide (21) and the middle transmission of second medium filling waveguide (22) by first medium arrive on the bore face (12) of antenna;
Select the position of polygon vertex in intermediate metallization arrays of vias (16) and select the position on the right in dielectric-filled waveguide (20) of head end straightway or polygon in the right metallization arrays of vias (18), can make on the bore face (12) by the two-way electromagnetic wave constant amplitude homophase arrival antenna of transmission in the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24).
2. the encapsulation interlayer antenna of a kind of phase amplitude calibration according to claim 1, it is characterized in that one end of described microstrip feed line (1) is connected with horn antenna (2), the other end of microstrip feed line (1), near package side surface, is the input/output port (6) of antenna; Microstrip feed line (1) is connected by antenna input/output port (6) one end with the co-planar waveguide (7) of package side surface, and the other end of co-planar waveguide (7) is connected with encapsulation internal circuit (8).
3. the encapsulation interlayer antenna of a kind of phase amplitude calibration according to claim 1, it is characterized in that the metallize shape of head end straightway in arrays of vias (18) or tail end straightway of described intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right is straight line or broken line or exponential line, its length is zero or finite length; Intermediate metallization arrays of vias (16), left side metallization arrays of vias (17) and the right polygon metallized in arrays of vias (18) are triangle or quadrangle or pentagon or other polygon, and the shape on a polygonal limit or many limits is straight line or camber line or other curve.
4. the encapsulation interlayer antenna of a kind of phase amplitude calibration according to claim 1, is characterized in that the width of described left side dielectric-filled waveguide (19) and the right dielectric-filled waveguide (20) all will ensure that its main mould can transmission and not being cut off in these dielectric-filled waveguides (16) and (17).
5. the encapsulation interlayer antenna of a kind of phase amplitude calibration according to claim 1, is characterized in that the width of described first medium filling waveguide (21), second medium filling waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) all will ensure that its main mould can fill waveguide (21) at first medium, second medium is filled transmission in waveguide (22), the 3rd dielectric-filled waveguide (23) and the 4th dielectric-filled waveguide (24) and is not cut off.
6. the encapsulation interlayer antenna of a kind of phase amplitude calibration according to claim 1, it is characterized in that in metallization via hole trumpet side walls (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls (11) formed can be equivalent to electric wall; The spacing of two adjacent embedded metal via holes (3) will be equal to or less than 1/10th of operation wavelength, makes the intermediate metallization arrays of vias (16) of formation, left side metallization arrays of vias (17) and the right metallization arrays of vias (18) can be equivalent to electric wall.
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| CN201210563336.XA CN103022672B (en) | 2012-12-21 | 2012-12-21 | Package sandwich antenna for phase amplitude calibration |
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| CN201210563336.XA CN103022672B (en) | 2012-12-21 | 2012-12-21 | Package sandwich antenna for phase amplitude calibration |
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| CN104752837A (en) * | 2015-03-30 | 2015-07-01 | 东南大学 | Packaged interlayer antenna capable of seam phase amplitude calibration |
| CN104779444A (en) * | 2015-04-02 | 2015-07-15 | 南京邮电大学 | Packaging sandwich antenna with function of gap embedded phase amplitude calibration |
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| JP2002359516A (en) * | 2001-05-30 | 2002-12-13 | Kyocera Corp | Primary radiator and phase shifter, and beam scanning antenna |
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| US7808439B2 (en) * | 2007-09-07 | 2010-10-05 | University Of Tennessee Reserch Foundation | Substrate integrated waveguide antenna array |
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| JP5172481B2 (en) * | 2008-06-05 | 2013-03-27 | 株式会社東芝 | Short slot directional coupler with post-wall waveguide, butler matrix and on-vehicle radar antenna using the same |
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| JP2002359516A (en) * | 2001-05-30 | 2002-12-13 | Kyocera Corp | Primary radiator and phase shifter, and beam scanning antenna |
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| CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
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