CN103022679B - Amplitude impedance calibrated package interlayer antenna - Google Patents
Amplitude impedance calibrated package interlayer antenna Download PDFInfo
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- CN103022679B CN103022679B CN201210564322.XA CN201210564322A CN103022679B CN 103022679 B CN103022679 B CN 103022679B CN 201210564322 A CN201210564322 A CN 201210564322A CN 103022679 B CN103022679 B CN 103022679B
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Abstract
The invention relates to a planar horn antenna, in particular to an amplitude impedance calibrated package interlayer antenna which comprises a micro-strip feeder (1), a horn antenna (2) and metalized via holes (3), wherein the micro-strip feeder (1), the horn antenna (2) and the metalized via holes (3) are integrated on a dielectric substrate (4) which is arranged on the inner layer of a three-dimensional package (5). One end of the micro-strip feeder (1) is connected with an internal circuit (8) through a coplanar waveguide (7) on the lateral side of a package, the horn antenna (2) comprises a bottom metal plane (9), a top metal plane (10) and metalized via side walls (11), a middle metalized via array (17), a left metalized via array (18) and a right metalized via array (19) consist of the metalized via holes (3) and form four dielectric filling waveguides in the horn antenna (2), and port wave impedance of the four dielectric filling waveguides on an antenna caliber surface (12) is equal to free space wave impedance. Antenna caliber efficiency can be improved while return loss is reduced.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of encapsulation interlayer antenna of amplitude impedance calibration.
Background technology
Adopt monolithic three-dimensional multi-chip (3D-MCM) technology, a radio system can be integrated in a 3-D stacks encapsulation, also need antenna to be integrated in encapsulation for this reason.Normally antenna integrated on the surface of encapsulation, such as paster antenna is integrated in the top of encapsulation.But need sometimes integrated for antenna in a package between an interlayer to meet the needs of system.If integrated horn antenna just can realize above-mentioned requirements in the inner interlayer of encapsulation.But usual horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thus limit its application on encapsulating structure.In recent years, substrate integration wave-guide horn antenna based on substrate integrated waveguide technology development has the advantages that size is little, lightweight, be easy to Planar integration, but the gain of traditional substrate integration wave-guide horn antenna is relatively low, one of them reason is that the power on wave impedance of magnetic wave of antenna opening diametric plane is different from the wave impedance of free space, and medium and air interface can cause reflection of electromagnetic wave, the return loss that have impact on antenna and radiance; On bore face, the amplitude of electromagnetic field is also very uneven in addition, narrowing toward each end broad in the middle, and this also affects the radiance of antenna.Existing method such as employing coated by dielectric, medium prism etc. at present, correct the asynchronous of horn mouth diametric plane phase place, but these methods all can not improve the inconsistent of horn antenna and free space wave impedance on bore face, the uniformity of electromagnetic field magnitude distribution on bore face can not be improved, and these phase alignment structures add the overall structure size of antenna, be not suitable for being integrated into the inner interlayer of encapsulation.
Summary of the invention
Technical problem: the object of the invention is the encapsulation interlayer antenna proposing a kind of amplitude impedance calibration, this inner antenna be embedded with metallization arrays of vias in order to improve antenna opening diametric plane power on magnetic wave amplitude uniformity and the inconsistent of antenna and free space wave impedance can be avoided, improve aperture efficiency and the gain of encapsulation interlayer antenna, reduce the reflection of antenna.
Technical scheme: the encapsulation interlayer antenna package of a kind of amplitude impedance calibration of the present invention draws together the microstrip feed line be arranged on medium substrate, substrate integration wave-guide horn antenna and embedded metal via hole, and medium substrate is at the internal layer of three-dimension packaging; Described microstrip feed line is connected with the internal circuit of three-dimension packaging by co-planar waveguide; Substrate integration wave-guide horn antenna to be connected bottom-side metal planar top surface metal flat by the bottom-side metal plane being positioned at medium substrate one side, the topside metal plane that is positioned at medium substrate another side metallization via hole trumpet side walls with through medium substrate forms; Metallization via hole embedded in substrate integration wave-guide horn antenna connects bottom-side metal plane and topside metal plane, and forms intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias; In horn antenna, there is first medium to fill waveguide, second medium fills waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide.
One end of described microstrip feed line is connected with horn antenna, and the other end of microstrip feed line, near package side surface, is the input/output port of antenna; Microstrip feed line is connected by antenna input/output port one end with the co-planar waveguide of package side surface, and the other end of co-planar waveguide is connected with encapsulation internal circuit.
Described intermediate metallization arrays of vias shape is one section of straight line, intermediate metallization arrays of vias is positioned at the position in the middle of two sidewalls of substrate integration wave-guide horn antenna, and substrate integration wave-guide horn antenna is divided into symmetrical two parts, in the both sides of the metallization arrays of vias of centre, symmetrical has left side dielectric-filled waveguide and the right dielectric-filled waveguide.
Described left side metallization arrays of vias is divided into first medium left side dielectric-filled waveguide and fills waveguide and second medium filling waveguide, and the right metallization arrays of vias is divided into the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide the dielectric-filled waveguide on the right.
Described left side metallization arrays of vias and the right metallization arrays of vias shape are all to be connected with tail end straightway three sections by head end straightway, polygon to form, the head end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias is all towards microstrip feed line direction, and the tail end of intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias is on antenna opening diametric plane.
Head end straightway in described left side metallization arrays of vias and the right metallization arrays of vias or the shape of tail end straightway can be straight line, broken line or exponential line etc., and its length can be zero or finite length; The polygon metallized in arrays of vias in left side metallization arrays of vias and the right can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve.
Described left side dielectric-filled waveguide, the right dielectric-filled waveguide, first medium fill waveguide, second medium fills waveguide, the width of the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide all will ensure that its main mould can on the left side dielectric-filled waveguide, the right dielectric-filled waveguide, first medium fill waveguide, second medium fills transmission in waveguide, the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide and be not cut off.
Described first medium fills waveguide, second medium fills waveguide, one end of the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide is all towards microstrip feed line direction, its other end is all on antenna opening diametric plane, and first medium fills waveguide, second medium fills waveguide, the 3rd dielectric-filled waveguide is the same at the width of antenna opening diametric plane upper port with the 4th dielectric-filled waveguide.
Select the position in head end straightway or polygon on the left side dielectric-filled waveguide in left side metallization arrays of vias, make to fill waveguide and second medium by first medium and fill the two-way electromagnetic wave constant amplitude transmitted in waveguide and arrive on the bore face of antenna.
Select the position on the right in dielectric-filled waveguide of head end straightway or polygon in the right metallization arrays of vias, the two-way electromagnetic wave constant amplitude by transmitting in the 3rd dielectric-filled waveguide and the 4th dielectric-filled waveguide is arrived on the bore face of antenna.
In metallization via hole trumpet side walls, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls formed can be equivalent to electric wall; The spacing of two adjacent metallization via holes will be equal to or less than 1/10th of operation wavelength, makes intermediate metallization arrays of vias, left side metallization arrays of vias and the right metallization arrays of vias formed can be equivalent to electric wall.
In dielectric-filled waveguide, the wave impedance of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the wave impedance of main mould is lower; Otherwise the width of dielectric-filled waveguide is narrower, the wave impedance of main mould is higher.The co-planar waveguide of electromagnetic wave signal through three-dimension packaging side from encapsulation internal circuit enters antenna input/output port, substrate integration wave-guide horn antenna is entered into again by microstrip feed line, after propagating a segment distance to the direction, bore face of antenna, run into middle metallization arrays of vias, the two-way that just point success rate is equal enters the dielectric-filled waveguide transmission of two, left and right respectively.Two the dielectric-filled waveguide full symmetrics in left and right, illustrate for the dielectric-filled waveguide on the left side.After electromagnetic wave enters the dielectric-filled waveguide transmission on the left side after a segment distance, the arrays of vias that metallizes will be run into, then be divided into two-way and transmitted to bore face by dielectric-filled waveguide; The position of polygon vertex in the position of this metallization arrays of vias head end of dielectric-filled waveguide on the adjustment left side and metallization arrays of vias, can change the relative power of this two-way electromagnetic transmission, and then adjustment is by the relative amplitude of electromagnetic wave on antenna opening diametric plane of two dielectric-filled waveguide transmission; If the port width of these two dielectric-filled waveguides on antenna opening diametric plane is equal, the left side metallization head end of arrays of vias and the position of polygon vertex in adjustment on the left side dielectric-filled waveguide, can make the bore face being arrived antenna by the electromagnetic same power of two dielectric-filled waveguide transmission; Transmitting in electromagnetic wave dielectric-filled waveguide on the right is also same situation.Just can control to power at antenna opening diametric plane the amplitude distribution of magnetic wave in the above described manner, if the port width remaining on four dielectric-filled waveguides on antenna opening diametric plane is equal, and the adjustment metallization head end of arrays of vias and the position of polygon vertex make to arrive antenna opening diametric plane by these four electromagnetic same power of dielectric-filled waveguide transmission, the field intensity amplitude distribution on antenna opening diametric plane just can be made even, so just can improve the aperture efficiency of antenna and the object of gain.And all equal the wave impedance of free space due to the wave impedance in these four dielectric-filled waveguides on antenna opening diametric plane, namely the port width a of dielectric-filled waveguide satisfies condition
namely port width a equals free space wavelength λ except the subduplicate twice subtracting 1 in medium relative dielectric constant ε, and therefore the reflection of antenna opening diametric plane is just little.
Beneficial effect: the beneficial effect of the encapsulation interlayer antenna of amplitude impedance calibration of the present invention is, improve antenna opening diametric plane power on magnetic wave amplitude consistency, simultaneously make again the electromagnetic wave impedance of antenna on bore face equal the wave impedance of free space, thus improve the gain of encapsulation interlayer antenna and reduce the return loss of antenna.
Accompanying drawing explanation
Fig. 1 is the three-dimension packaging overall structure schematic diagram of the encapsulation interlayer antenna of amplitude impedance calibration.
Fig. 2 is the encapsulation interlayer antenna face structural representation of amplitude impedance calibration.
Fig. 3 is the encapsulation interlayer antenna inverse layer structure schematic diagram of amplitude impedance calibration.
Have in figure: microstrip feed line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, antenna input/output port 6, co-planar waveguide 7, internal circuit 8, bottom-side metal plane 9, topside metal plane 10, metallization via hole trumpet side walls 11, the bore face 12 of antenna, the narrow Cross-section Waveguide Using 13 of antenna, the tubaeform waveguide 14 of antenna, the wide Cross-section Waveguide Using 15 of antenna, ground plane 16, intermediate metallization arrays of vias 17, left side metallization arrays of vias 18, the right metallization arrays of vias 19, left side dielectric-filled waveguide 20, the right dielectric-filled waveguide 21, first medium fills waveguide 22, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Embodiment of the present invention is: the encapsulation interlayer antenna of amplitude impedance calibration is made up of microstrip feed line 1, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three part, this three part is all integrated on same medium substrate 4, and this medium substrate is positioned at the internal layer of 4 3-dimensional multi-layered encapsulation 5, one termination substrate integration wave-guide horn antenna 2 of microstrip feed line 1, microstrip feed line 1 other end is near package side surface, it is the input/output port 6 of antenna, the input/output port 6 of antenna is spent to cross by micro-band and co-planar waveguide 90 and is connected with the co-planar waveguide 7 of package side surface, and the other end of co-planar waveguide 7 is connected with encapsulation internal circuit 8, substrate integration wave-guide horn antenna 2 is made up of bottom-side metal plane 9, topside metal plane 10 and metallization via hole trumpet side walls 11, bottom-side metal plane 9 and topside metal plane 10 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom-side metal plane 9 and topside metal plane 10, the inside of horn antenna 2 is by narrow Cross-section Waveguide Using 13, and tubaeform waveguide 14 and wide Cross-section Waveguide Using 15 3 part serial connection form, one termination microstrip feed line 1 of horn antenna 2, bottom-side metal plane 9 is connected with the ground plane 16 of microstrip feed line 1, the other end of horn antenna 2 is bore faces 12 of antenna, metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom-side metal plane 9 and topside metal plane 10, and these embedded metallization via holes 3 form intermediate metallization arrays of vias 17, left side metallization arrays of vias 18 and the right metallization arrays of vias 19, middle metallization arrays of vias 17 is positioned at the position in the middle of horn antenna two side 11, and in the both sides of the metallization arrays of vias 17 of centre, symmetrical has left side dielectric-filled waveguide 20 and the right dielectric-filled waveguide 21, intermediate metallization arrays of vias 17 shape is one section of straightway, and the head end of intermediate metallization arrays of vias 17 is towards the direction of microstrip feed line 1, and the tail end of intermediate metallization arrays of vias 17 reaches the bore face 12 of horn antenna, in the dielectric-filled waveguide 20 on horn antenna 2 left side, there is left side metallization arrays of vias 18, left side dielectric-filled waveguide 20 is divided into first medium and fills waveguide 22 and second medium filling waveguide 23, on the right of horn antenna in dielectric-filled waveguide 21, there is the arrays of vias 19 that metallizes, the right dielectric-filled waveguide 21 is divided into the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25, left side metallization arrays of vias 18 and the right metallization arrays of vias 19 shape are all that a paragraph header end straightway connects polygon and connects one section of tail end straightway again, the head end of left side metallization arrays of vias 18 and the right metallization arrays of vias 19 all towards the direction of microstrip feed line 1, the tail end of left side metallization arrays of vias 18 and the right metallization arrays of vias 19 is on the bore face 12 of horn antenna 2, intermediate metallization arrays of vias 17, left side metallization arrays of vias 18 and the right metallization arrays of vias 19 form the dielectric-filled waveguide of four in antenna 2, namely first medium fills waveguide 22, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25, and first medium fills waveguide 22 on antenna opening diametric plane, second medium fills waveguide 23, the port width of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 makes these dielectric-filled waveguides all equal the wave impedance of free space in the wave impedance of antenna opening diametric plane 12.
In dielectric-filled waveguide, the wave impedance of the propagation of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the wave impedance of main mould is lower; Otherwise dielectric-filled waveguide width is narrower, the wave impedance of main mould is higher.The co-planar waveguide 7 of electromagnetic wave signal through three-dimension packaging 5 side from encapsulation internal circuit 8 enters antenna input/output port 6, substrate integration wave-guide horn antenna 2 is entered into again by microstrip feed line 1, after propagating a segment distance, run into intermediate metallization arrays of vias 17, due to symmetry, the electromagnetic wave two-way that just point success rate is equal enters left side dielectric-filled waveguide 20 respectively and the right dielectric-filled waveguide 21 transmits.Left side dielectric-filled waveguide 20 and the right dielectric-filled waveguide 21 full symmetric, for dielectric-filled waveguide 20 explanation on the left side, when electromagnetic wave enter left side dielectric-filled waveguide 20 transmit after after a segment distance, left side metallization arrays of vias 18 will be run into, be divided into two-way again to transmit to the direction of antenna opening diametric plane 12 respectively by first medium filling waveguide 22 and second medium filling waveguide 23, the position of polygon vertex in the position of the head end of the arrays of vias 18 that metallizes in adjustment left side dielectric-filled waveguide 20 and metallization arrays of vias 18, the electromagnetic relative power of being filled transmission in waveguide 22 and second medium filling waveguide 23 by first medium can be adjusted, and then adjustment fills the relative amplitude of electromagnetic wave on bore face 12 of waveguide 22 and second medium filling waveguide 23 transmission by first medium, if the port width of first medium filling waveguide 22 and second medium filling waveguide 23 is equal on antenna opening diametric plane 12, the left side metallization head end of arrays of vias 18 and the position of polygon vertex in adjustment on the left side dielectric-filled waveguide 20, electromagnetic wave can be made to fill the waveguide 22 bore face 12 that be transferred to antenna equal with second medium filling waveguide 23 power by first medium, and it is the same with the field intensity amplitude distribution that second medium is filled on waveguide 23 port that the first medium like this on antenna opening diametric plane 12 fills waveguide 22, it is also same situation that electromagnetic wave transmits in dielectric-filled waveguide 21 on the right.Just can control the electromagnetic amplitude distribution on antenna opening diametric plane 12 in the above described manner, if remain on first medium on antenna opening diametric plane 12 to fill waveguide 22, second medium fills waveguide 23, the port width of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 is all equal, and metallize in left side metallization arrays of vias 18 and the right, the head end of arrays of vias 19 and the position of polygon vertex make to fill waveguide 22 by first medium, second medium fills waveguide 23, 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 transmit electromagnetic same power and arrive antenna opening diametric plane 12, first medium on antenna opening diametric plane 12 just can be made to fill waveguide 22, second medium fills waveguide 23, field intensity amplitude distribution on four ports of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 is even, so just reach the object improving antenna aperture efficiency and gain.In like manner also can realize specific field intensity amplitude distribution as required on the bore face 12 of antenna.And due to the wave impedance that first medium fills waveguide 22 on antenna opening diametric plane 12, second medium fills waveguide 23, the wave impedance of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 middle port all equals free space, namely first medium fills waveguide 22, second medium fills waveguide 23, the port width a of the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 satisfies condition
namely port width a equals free space wavelength λ except the subduplicate twice subtracting 1 in medium relative dielectric constant ε, and therefore the reflection of antenna opening diametric plane is just little.
In technique, the encapsulation interlayer antenna of amplitude impedance calibration both can adopt three-dimensional resinous packaging technology, and LTCC (LTCC) technique also can be adopted to realize.The via hole 3 that wherein metallizes can be hollow metal through hole with metallization via sidewall 11 also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, due to the equal condition of wave impedance will be met, the port width of dielectric-filled waveguide is certain, thus the width of antenna opening diametric plane 12 just can not set arbitrarily, because keep dielectric-filled waveguide to equal the wave impedance of free space in the wave impedance of port, the dielectric constant of medium substrate 4 is certain, then the port width of dielectric-filled waveguide is also certain, therefore the dielectric-filled waveguide quantity at antenna opening diametric plane place doubles, and bore face 12 width of antenna also will double.According to same thinking, four strip metal arrays of vias can be added again first medium filling waveguide 22, second medium are filled waveguide 23, the 3rd dielectric-filled waveguide 24 and the 4th dielectric-filled waveguide 25 and be divided into eight dielectric-filled waveguides, and make the electromagnetic wave power that arrived on antenna opening diametric planes 12 by these eight dielectric-filled waveguides the same and port wave impedance all equals the wave impedance of free space, so not only the reflection of antenna is little, and amplitude distribution simultaneously on bore face 12 is more even, but the overall width of antenna opening diametric plane 12 will double.The polygon metallized in arrays of vias 19 in antenna left side metallization arrays of vias 18 and the right can be triangle, quadrangle, pentagon or other polygon, and the shape on these polygonal limits or many limits can be straight line, camber line or other curve; Head end straightway in metallization arrays of vias 18 and 19 and the shape of tail end straightway can be straight line, broken line, exponential line etc.
According to the above, just the present invention can be realized.
Claims (6)
1. the encapsulation interlayer antenna of an amplitude impedance calibration, it is characterized in that this antenna comprises the microstrip feed line (1) be arranged on medium substrate (4), substrate integration wave-guide horn antenna (2) and embedded metal via hole (3), medium substrate (4) internal layer in three-dimension packaging (5); Described microstrip feed line (1) is connected with the internal circuit (8) of three-dimension packaging (5) by co-planar waveguide (7); Substrate integration wave-guide horn antenna (2) to be connected bottom-side metal plane (9) topside metal plane (10) by the bottom-side metal plane (9) being positioned at medium substrate (4) one side, the topside metal plane (10) that is positioned at medium substrate (4) another side metallization via hole trumpet side walls (11) with through medium substrate (4) forms; Metallization via hole (3) embedded in substrate integration wave-guide horn antenna (2) connects bottom-side metal plane (9) and topside metal plane (10), and forms intermediate metallization arrays of vias (17), left side metallization arrays of vias (18) and the right metallization arrays of vias (19); Intermediate metallization arrays of vias (17) shape is one section of straight line, intermediate metallization arrays of vias (17) is positioned at the position in the middle of two sidewalls (11) of substrate integration wave-guide horn antenna (2), and substrate integration wave-guide horn antenna (2) is divided into symmetrical left side dielectric-filled waveguide (20) and the right dielectric-filled waveguide (21); Left side metallization arrays of vias (18) is divided into first medium left side dielectric-filled waveguide (20) and fills waveguide (22) and second medium filling waveguide (23), and the right metallization arrays of vias (19) is divided into the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) the dielectric-filled waveguide on the right (21); First medium fills waveguide (22), second medium fills waveguide (23), the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) all equal free space wave impedance in the wave impedance of port;
Left side metallization arrays of vias (18) and the right arrays of vias (19) shape that metallizes is all to be connected with end section three sections by head portion, polygon to form, intermediate metallization arrays of vias (17), the left side metallization arrays of vias (18) and the right metallization arrays of vias (19) head end all towards microstrip feed line (1) direction, intermediate metallization arrays of vias (17), the left side metallization arrays of vias (18) and the right metallize arrays of vias (19) tail end on antenna opening diametric plane (12);
Select the position in the middle head portion in left side metallization arrays of vias (18) or polygon on the left side dielectric-filled waveguide (20), make the two-way electromagnetic wave constant amplitude of being filled transmission in waveguide (22) and second medium filling waveguide (23) by first medium arrive on the bore face (12) of antenna;
Select the position on the right in dielectric-filled waveguide (21) of head portion or polygon in the right metallization arrays of vias (19), make on the bore face (12) by the two-way electromagnetic wave constant amplitude arrival antenna of transmission in the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25).
2. the encapsulation interlayer antenna of a kind of amplitude impedance calibration according to claim 1, it is characterized in that one end of described microstrip feed line (1) is connected with horn antenna (2), the other end of microstrip feed line (1), near package side surface, is the input/output port (6) of antenna; Microstrip feed line (1) is connected by antenna input/output port (6) one end with the co-planar waveguide (7) of package side surface, and the other end of co-planar waveguide (7) is connected with encapsulation internal circuit (8).
3. the encapsulation interlayer antenna of a kind of amplitude impedance calibration according to claim 1, is characterized in that the metallize shape of head portion in arrays of vias (19) or end section of described left side metallization arrays of vias (18) and the right can be straight line, broken line or exponential line etc.; The polygon that left side metallization arrays of vias (18) and the right polygon metallized in arrays of vias (19) can be triangles, quadrangle, pentagon or other limit number are greater than five.
4. the encapsulation interlayer antenna of a kind of amplitude impedance calibration according to claim 1, is characterized in that the width of described left side dielectric-filled waveguide (20) and the right dielectric-filled waveguide (21) all will ensure that its main mould can transmission and not being cut off on the left side dielectric-filled waveguide (20) and the right dielectric-filled waveguide (21).
5. the encapsulation interlayer antenna of a kind of amplitude impedance calibration according to claim 1, is characterized in that the width of described first medium filling waveguide (22), second medium filling waveguide (23), the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) all will ensure that its main mould can fill waveguide (22) at first medium, second medium is filled transmission in waveguide (23), the 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) and is not cut off.
6. the encapsulation interlayer antenna of a kind of amplitude impedance calibration according to claim 1, it is characterized in that described first medium fills waveguide (22), second medium fills waveguide (23), one end of 3rd dielectric-filled waveguide (24) and the 4th dielectric-filled waveguide (25) is all towards microstrip feed line (1) direction, its other end is all on antenna opening diametric plane (12), and first medium fills waveguide (22), second medium fills waveguide (23), 3rd dielectric-filled waveguide (24) is the same at the width of antenna opening diametric plane (12) upper port with the 4th dielectric-filled waveguide (25).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210564322.XA CN103022679B (en) | 2012-12-21 | 2012-12-21 | Amplitude impedance calibrated package interlayer antenna |
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| CN201210564322.XA CN103022679B (en) | 2012-12-21 | 2012-12-21 | Amplitude impedance calibrated package interlayer antenna |
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| CN103022679B true CN103022679B (en) | 2015-01-28 |
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