CN103022709A - Phase-calibrated packaged sandwich antenna with embedded plated through holes - Google Patents
Phase-calibrated packaged sandwich antenna with embedded plated through holes Download PDFInfo
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- CN103022709A CN103022709A CN201210563061XA CN201210563061A CN103022709A CN 103022709 A CN103022709 A CN 103022709A CN 201210563061X A CN201210563061X A CN 201210563061XA CN 201210563061 A CN201210563061 A CN 201210563061A CN 103022709 A CN103022709 A CN 103022709A
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Abstract
The invention relates to a horn antenna, in particular to a phase-calibrated packaged sandwich antenna with embedded plated through holes. The antenna comprises a microstrip feeder (1), a horn antenna (2) and plated through holes (3), wherein the microstrip feeder (1), the horn antenna (2) and the plated through holes (3) are integrated on a dielectric substrate (4). The dielectric substrate (4) is inside 3D package (5). One end of the microstrip feeder (1) is connected with an internal circuit (8) through a coplanar waveguide (7) on the side of the package. The horn antenna (2) comprises a bottom metal plane (9), a top metal plane (10) and plated through hole sidewalls (11). Through hole arrays (16) of the plated through holes (3) form a plurality of dielectric loaded waveguides (17) in the horn antenna (2). One port of each dielectric loaded waveguide (17) faces to the microstrip feeder (1), and the other port of each dielectric loaded waveguide extends towards an aperture surface (12) of the horn antenna without reaching the aperture surface (12). Antenna gain of the phase-calibrated packaged sandwich antenna with embedded plated through holes can be increased.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of encapsulation interlayer antenna of embedded metal via hole phase alignment.
Background technology
Adopt lamination 3-D multi-chip (3D-MCM) technology, can be integrated in a radio system in the 3-D stacks encapsulation, also need antenna is integrated in the encapsulation for this reason.Normally surperficial antenna integrated in encapsulation for example is integrated in paster antenna the top of encapsulation.But need sometimes antenna is integrated in a middle interlayer of encapsulation to satisfy the needs of system.If integrated horn antenna just can be realized above-mentioned requirements in the inner interlayer of encapsulation.But usually horn antenna is nonplanar, with incompatible, the larger physical dimension that has of planar circuit technique, thereby has limited its application on encapsulating structure.In recent years, the substrate integration wave-guide horn antenna that develops based on substrate integrated waveguide technology has the advantages that size is little, lightweight, be easy to Planar integration,
But the gain of traditional substrate integration wave-guide horn antenna is relatively low, its reason is because horn mouth constantly opens, phase place occurs when causing Electromagnetic Wave Propagation to the horn mouth diametric plane asynchronous, the PHASE DISTRIBUTION of bore electric field strength is inhomogeneous, and radiation directivity and gain reduce.The methods such as at present existing employing medium loading, medium prism, the phase place of correcting the loudspeaker aperture field, but these phase alignment structures have increased the overall structure size of antenna, are not suitable for being integrated into the inner interlayer of encapsulation.
Summary of the invention
Technical problem: the encapsulation interlayer antenna that the objective of the invention is to propose a kind of embedded metal via hole phase alignment, this antenna inside be embedded with the metallization arrays of vias inconsistent in order to electromagnetic phase place on the RECTIFYING ANTENNA bore face, reduce the quantity of bore face null field, the aperture efficiency and the gain that improve the interlayer antenna simultaneously.
Technical scheme: the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment of the present invention, this antenna comprises microstrip feed line, substrate integration wave-guide horn antenna and the embedded metal via hole that is arranged on the medium substrate, and medium substrate is at the internal layer of three-dimension packaging; Described microstrip feed line links to each other with the internal circuit of three-dimension packaging by co-planar waveguide; The substrate integration wave-guide horn antenna is comprised of with the metallization via hole loudspeaker sidewall that is connected medium substrate and connects bottom surface metal flat end face metal flat the bottom surface metal flat that is positioned at medium substrate one side, the end face metal flat that is positioned at the medium substrate another side; Metallization via hole embedded in the substrate integration wave-guide horn antenna connects bottom surface metal flat and end face metal flat, and consists of the metallization arrays of vias; The metallization arrays of vias forms a plurality of dielectric-filled waveguides with metallization via hole loudspeaker sidewall in horn antenna.
One end of described microstrip feed line links to each other with horn antenna, and the other end of microstrip feed line is the input/output port of antenna near package side surface; Microstrip feed line links to each other with an end of the co-planar waveguide of package side surface by the antenna input/output port, and the other end of co-planar waveguide links to each other with the encapsulation internal circuit.
Described substrate integration wave-guide horn antenna is made of narrow Cross-section Waveguide Using and tubaeform waveguide serial connection; One end of narrow Cross-section Waveguide Using is microstrip feed line, and the other end of narrow Cross-section Waveguide Using links to each other with tubaeform waveguide, and an end of tubaeform waveguide links to each other with narrow Cross-section Waveguide Using, and the other end of tubaeform waveguide is the antenna opening diametric plane.
A port of described dielectric-filled waveguide is towards the direction of microstrip feed line, and the bore face direction of horn antenna has all been equalled and stretched to another port of dielectric-filled waveguide, but its position is less than on the antenna opening diametric plane.
The width of described dielectric-filled waveguide will guarantee that its main mould can transmit and is not cut off in dielectric-filled waveguide.
In the described metallization linear array of vias, adjust the distance between the adjacent two row metallization linear array of vias or adjust a distance that is listed as between metallization linear array of vias and the substrate integration wave-guide horn antenna side-wall metallic via hole, can change the width of dielectric-filled waveguide, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide, so that it is more even to arrive the electromagnetic PHASE DISTRIBUTION of port of dielectric-filled waveguide and dielectric-filled waveguide.
In the described metallization linear array of vias, the length that changes row or multiple row embedded metal linear array of vias can change the length that respective media is filled waveguide, and then so that the electromagnetic PHASE DISTRIBUTION of arrival dielectric-filled waveguide port is more even.
The shape of described metallization linear array of vias can be straight line, broken line or other curve.
The spacing of two adjacent metallization via holes is less than or equal to 1/10th of operation wavelength in the described metallization linear array of vias, so that the metallization linear array of vias that consists of can equivalence be electric wall.
In the described metallization via hole loudspeaker sidewall, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, so that the metallization via hole loudspeaker sidewall that consists of can equivalence be electric wall.
The spacing of two adjacent metallization via holes is less than or equal to 1/10th of operation wavelength in the metallization linear array of vias, so that the metallization linear array of vias that consists of can equivalence be electric wall; In the metallization via hole loudspeaker sidewall, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, so that the metallization via hole loudspeaker sidewall that consists of can equivalence be electric wall.
In dielectric-filled waveguide, the propagation phase velocity of electromagnetic wave master mould (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide is narrower, and the phase velocity that main mould is propagated is higher.In the metallization linear array of vias, adjust the distance between the adjacent two row metallization linear array of vias or adjust a distance that is listed as between metallization linear array of vias and substrate integration wave-guide horn antenna (2) the side-wall metallic via hole, can change the width of dielectric-filled waveguide, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide.Co-planar waveguide from the electromagnetic wave signal process three-dimension packaging side that encapsulates internal circuit enters the antenna input/output port, enter into the substrate integration wave-guide horn antenna by microstrip feed line again, after propagating a segment distance to the bore face direction of antenna, run into row or ordered series of numbers metallization arrays of vias, just be divided into two-way or multichannel, enter dielectric-filled waveguide and propagate, arrive again the bore face of antenna by dielectric-filled waveguide near the port of substrate integration wave-guide horn antenna bore face; At the electromagnetic wave of filling the port of waveguide near the different medium on the antenna opening diametric plane, filling waveguide by different medium arrives, and the path of each road process is variant, arrive the antenna opening diametric plane the edge electromagnetic wave the distance of process far away, but the width of the dielectric-filled waveguide of process is narrower, and electromagnetic phase velocity is very fast; And near the distance that electromagnetic wave passes through that arrives the antenna opening diametric plane center is nearer, but the wider width of the dielectric-filled waveguide of process, electromagnetic phase velocity is slower.The length that changes row or multiple row embedded metal linear array of vias can change the length that respective media is filled waveguide.The electromagnetic phase place that arrives near each port of antenna opening diametric plane so just can be consistent, and then also is consistent in antenna opening diametric plane phase place everywhere, just reaches the purpose that improves antenna gain.In addition since the bore face on except the loudspeaker sidewall be the null field, other zone of bore face does not have null field, the field strength distribution of bore face is also relatively more even like this.In like manner also can near the bore face of antenna, realize as required specific PHASE DISTRIBUTION.
Beneficial effect: the beneficial effect of the encapsulation interlayer antenna of embedded metal via hole phase alignment of the present invention is, corrected the antenna opening diametric plane power on the phase place of magnetic wave inconsistent, also avoid more null field occurring at the antenna opening diametric plane, thereby the aperture efficiency and the gain that have improved the interlayer antenna.
Description of drawings
Fig. 1 is the encapsulating structure schematic diagram of the encapsulation interlayer antenna of embedded metal via hole phase alignment.
Fig. 2 is the encapsulation interlayer antenna face structural representation of embedded metal via hole phase alignment.
Fig. 3 is the encapsulation interlayer antenna reverse side structural representation of embedded metal via hole phase alignment.
Have among the figure: microstrip feed line 1, substrate integration wave-guide horn antenna 2, embedded metal via hole 3, medium substrate 4, three-dimension packaging 5, the port one 8 of the tubaeform waveguide 14 of the bore face 12 of antenna input/output port 6, co-planar waveguide 7, internal circuit 8, bottom surface metal flat 9, end face metal flat 10, metallization via hole loudspeaker sidewall 11, antenna, the narrow Cross-section Waveguide Using 13 of antenna, antenna, ground plane 15, metallization arrays of vias 16, dielectric-filled waveguide 17 and dielectric-filled waveguide.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Embodiment of the present invention is: the encapsulation interlayer antenna of embedded metal via hole phase alignment is comprised of microstrip feed line 1, substrate integration wave-guide horn antenna 2 and embedded metal via hole 3 three parts, this three part all is integrated on the same medium substrate 4, and this medium substrate is positioned at the internal layer of 4 3-dimensional multi-layered encapsulation 5; One termination substrate integration wave-guide horn antenna 2 of microstrip feed line 1, microstrip feed line 1 other end is near package side surface, it is the input/output port 6 of antenna, the input/output port 6 of antenna is spent to cross with the co-planar waveguide 7 of package side surface by little band and co-planar waveguide 90 and is linked to each other, and the other end of co-planar waveguide 7 links to each other with encapsulation internal circuit 8; Substrate integration wave-guide horn antenna 2 is comprised of bottom surface metal flat 9, end face metal flat 10 and metallization via hole loudspeaker sidewall 11, bottom surface metal flat 9 and end face metal flat 10 lay respectively at the two sides of medium substrate 4, and metallization via sidewall 11 connects bottom surface metal flat 9 and end face metal flat 10; The inside of horn antenna 2 is formed by narrow Cross-section Waveguide Using 13 and tubaeform waveguide 14 two parts serial connection; One termination microstrip feed line 1 of horn antenna 2, bottom surface metal flat 9 is connected with the ground plane 15 of microstrip feed line 1, the other end of horn antenna 2 is bore faces 12 of antenna, metallization via hole 3 embedded in substrate integration wave-guide horn antenna 2 connects bottom surface metal flat 9 and end face metal flat 10, and these embedded metallization via holes 3 consist of row or ordered series of numbers metallization linear array of vias 16; Adjacent two row metallization linear array of vias 16, a perhaps sidewall 11 of a row metallization linear array of vias 16 and substrate integration wave-guide loudspeaker, dielectric-filled waveguide 17 with bottom surface metal flat 6 and end face metal flat 9 formation constant width or change width, a port of these dielectric-filled waveguides 17 in substrate integration wave-guide horn antenna 2 towards the direction of microstrip feed line 1, another port one 8 stretches to the bore face 12 of substrate integration wave-guide horn antenna, but on antenna opening diametric plane 12, it is concordant near the port one 8 of antenna opening diametric planes 12 that All Media is filled waveguide 17, the equating or do not wait of these port one 8 width.
In dielectric-filled waveguide 17, the propagation phase velocity of electromagnetic wave master mould is relevant with the width of dielectric-filled waveguide 13, and the width of dielectric-filled waveguide 17 is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide 17 is narrower, and the phase velocity that main mould is propagated is higher.Co-planar waveguide 7 from electromagnetic wave signal process three-dimension packaging 5 sides that encapsulate internal circuit 8 enters antenna input/output port 6, enter into substrate integration wave-guide horn antenna 2 by microstrip feed line 1 again, after propagating a segment distance, run into row or middle ordered series of numbers metallization linear array of vias 16, just be divided into two-way or multichannel, enter dielectric-filled waveguide 17 and propagate, arrive again the bore face 12 of antenna by dielectric-filled waveguide 17 near the port one 8 of substrate integration wave-guide horn antenna bore face 12; At the electromagnetic wave of filling the port one 8 of waveguide 17 near the different medium on the antenna opening diametric plane 12, filling waveguide 17 by different medium arrives, and the path of each road process is variant, arrive antenna opening diametric plane 12 the edge electromagnetic wave the distance of process far away, and near the distance that electromagnetic wave passes through that arrives antenna opening diametric plane 12 centers is nearer, but arrive near the dielectric-filled waveguide that electromagnetic wave passes through 17 antenna opening diametric plane 12 centers Width arrival bore face 12 the edge electromagnetic wave the width of dielectric-filled waveguide 17 of process wide, its phase velocity is relatively slow, near electromagnetic average phase speed ratio bore face 12 centers at the edge of bore face 12 electromagnetic average phase velocity wants fast like this, the electromagnetic phase place that arrives near antenna opening diametric plane 12 each port ones 8 so just can be consistent, and then also be consistent in antenna opening diametric plane 12 phase place everywhere, just reach the purpose that improves antenna gain.In addition since antenna opening diametric plane 12 on except the loudspeaker sidewall be the null field, other zone of antenna opening diametric plane 12 does not have null field, the field strength distribution of antenna opening diametric plane 12 is also relatively more even like this.In like manner also can near the bore face 12 of antenna, realize as required specific PHASE DISTRIBUTION.
On technique, the encapsulation interlayer antenna of embedded metal via hole phase alignment both can adopt the three-dimensional resinous packaging technology, also can adopt LTCC (LTCC) technique to realize.Via hole 3 and the metallization via sidewall 11 of wherein metallizing can be that the hollow metal through hole also can be the solid metal hole, also can be continuous metallization wall, and the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, can increase again metallization arrays of vias 16 quantity antenna 2 is divided into more dielectric-filled waveguide 17, and so that arriving the port one 8 of dielectric-filled waveguide, the electromagnetic wave homophase by these dielectric-filled waveguides 17 arrives again antenna opening diametric plane 12, PHASE DISTRIBUTION on the antenna opening diametric plane 12 is more even like this, and the quantity that increases dielectric-filled waveguide 17 might not require to increase simultaneously the width of antenna opening diametric plane 12, as long as it is just passable to guarantee that dielectric-filled waveguide 17 can transmit main mould.Because the metallization via sidewall 11 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 12 is far away, therefore with respect to from the dielectric-filled waveguide 17 of metallization via sidewall 11 away from, from the width relative narrower of the dielectric-filled waveguide 17 of metallization via sidewall 11 close to obtain higher electromagnetic transmission phase velocity.The metallization arrays of vias 16 be arranged in linear can be straight line, broken line, exponential line or other curve.
According to the above, just can realize the present invention.
Claims (10)
1. the encapsulation interlayer antenna of an embedded metal via hole phase alignment, it is characterized in that this antenna comprises microstrip feed line (1), substrate integration wave-guide horn antenna (2) and the embedded metal via hole (3) that is arranged on the medium substrate (4), medium substrate (4) is at the internal layer of three-dimension packaging (5); Described microstrip feed line (1) links to each other with the internal circuit (8) of three-dimension packaging (5) by co-planar waveguide (7); Substrate integration wave-guide horn antenna (2) is comprised of the bottom surface metal flat (9) that is positioned at medium substrate (4) one side, the metallization via hole loudspeaker sidewalls (11) that are positioned at the end face metal flat (10) of medium substrate (4) another side and are connected medium substrate (4) connection bottom surface metal flat (9) end face metal flat (10); Metallization via hole (3) embedded in the substrate integration wave-guide horn antenna (2) connects bottom surface metal flat (9) and end face metal flat (10), and consists of metallization arrays of vias (16); Metallization arrays of vias (16) forms a plurality of dielectric-filled waveguides (17) with metallization via hole loudspeaker sidewalls (11) in horn antenna (2).
2. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 1, an end that it is characterized in that described microstrip feed line (1) links to each other with horn antenna (2), the other end of microstrip feed line (1) is the input/output port (6) of antenna near package side surface; Microstrip feed line (1) links to each other with an end of the co-planar waveguide (7) of package side surface by antenna input/output port (6), and the other end of co-planar waveguide (7) links to each other with encapsulation internal circuit (8).
3. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 1 is characterized in that described substrate integration wave-guide horn antenna (2) is made of narrow Cross-section Waveguide Using (13) and tubaeform waveguide (14) serial connection; One end of narrow Cross-section Waveguide Using (13) is microstrip feed line (1), the other end of narrow Cross-section Waveguide Using (13) links to each other with tubaeform waveguide (14), one end of tubaeform waveguide (14) links to each other with narrow Cross-section Waveguide Using (13), and the other end of tubaeform waveguide (14) is antenna opening diametric plane (12).
4. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 1, it is characterized in that a port of described dielectric-filled waveguide (17) is towards the direction of microstrip feed line (1), bore face (12) direction of horn antenna has all been equalled and stretched to another port (18) of dielectric-filled waveguide (17), but its position is less than on the antenna opening diametric plane (12).
5. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 4, the width that it is characterized in that described dielectric-filled waveguide (17) will guarantee that its main mould can transmit and is not cut off in dielectric-filled waveguide (17).
6. according to claim 1 or the encapsulation interlayer antenna of 4 or 5 described a kind of embedded metal via hole phase alignments, it is characterized in that in the described metallization linear array of vias (16), adjust the distance between the adjacent two row metallization linear array of vias (16), perhaps adjust the distance between a row metallization linear array of vias (16) and substrate integration wave-guide horn antenna (2) the side-wall metallic via hole (11), can change the width of dielectric-filled waveguide (17), and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide (17), so that it is more even to arrive the electromagnetic PHASE DISTRIBUTION of dielectric-filled waveguide (17) port (18).
7. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 6, it is characterized in that in the described metallization linear array of vias (16), the length that changes row or multiple row embedded metal linear array of vias (16) can change the length that respective media is filled waveguide (17), and then so that the electromagnetic PHASE DISTRIBUTION of arrival dielectric-filled waveguide (17) port (18) is more even.
8. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 7, the shape that it is characterized in that described metallization linear array of vias (16) can be straight line, broken line or other curve.
9. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 1, the spacing that it is characterized in that two metallization via holes (3) adjacent in the described metallization linear array of vias (16) is less than or equal to 1/10th of operation wavelength, so that the metallization linear array of vias (16) that consists of can equivalence be electric wall.
10. the encapsulation interlayer antenna of a kind of embedded metal via hole phase alignment according to claim 1, it is characterized in that in the described metallization via hole loudspeaker sidewalls (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, so that the metallization via hole loudspeaker sidewalls (11) that consist of can equivalence be electric wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210563061.XA CN103022709B (en) | 2012-12-21 | 2012-12-21 | Phase-calibrated packaged sandwich antenna with embedded plated through holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210563061.XA CN103022709B (en) | 2012-12-21 | 2012-12-21 | Phase-calibrated packaged sandwich antenna with embedded plated through holes |
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| Publication Number | Publication Date |
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| CN103022709A true CN103022709A (en) | 2013-04-03 |
| CN103022709B CN103022709B (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210563061.XA Expired - Fee Related CN103022709B (en) | 2012-12-21 | 2012-12-21 | Phase-calibrated packaged sandwich antenna with embedded plated through holes |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716434A (en) * | 2015-03-30 | 2015-06-17 | 东南大学 | Plane horn antenna capable of achieving gap embedding phase calibration |
| CN104733833A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Package interlayer antenna with calibrated gap embedment amplitude |
| CN104733866A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Packaging sandwich antenna for gap embedded phase position calibration |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359516A (en) * | 2001-05-30 | 2002-12-13 | Kyocera Corp | Primary radiator and phase shifter, and beam scanning antenna |
| CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
| CN101026263A (en) * | 2006-02-22 | 2007-08-29 | 南京理工大学 | Substrate integrated waveguide small-sized prism type horn antenna |
| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
| CN201994414U (en) * | 2011-03-30 | 2011-09-28 | 南京邮电大学 | Filtering antenna applied to microwave/millimeter-wave circuit |
-
2012
- 2012-12-21 CN CN201210563061.XA patent/CN103022709B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359516A (en) * | 2001-05-30 | 2002-12-13 | Kyocera Corp | Primary radiator and phase shifter, and beam scanning antenna |
| CN101026263A (en) * | 2006-02-22 | 2007-08-29 | 南京理工大学 | Substrate integrated waveguide small-sized prism type horn antenna |
| CN1949590A (en) * | 2006-10-27 | 2007-04-18 | 东南大学 | Substrate integrated waveguide comb-shaped power distributor |
| CN101179155A (en) * | 2007-11-12 | 2008-05-14 | 杭州电子科技大学 | H face sectoral horn antenna including filter function |
| CN201994414U (en) * | 2011-03-30 | 2011-09-28 | 南京邮电大学 | Filtering antenna applied to microwave/millimeter-wave circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716434A (en) * | 2015-03-30 | 2015-06-17 | 东南大学 | Plane horn antenna capable of achieving gap embedding phase calibration |
| CN104733833A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Package interlayer antenna with calibrated gap embedment amplitude |
| CN104733866A (en) * | 2015-03-30 | 2015-06-24 | 东南大学 | Packaging sandwich antenna for gap embedded phase position calibration |
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