CN103003948B - 二极管 - Google Patents
二极管 Download PDFInfo
- Publication number
- CN103003948B CN103003948B CN201180034849.5A CN201180034849A CN103003948B CN 103003948 B CN103003948 B CN 103003948B CN 201180034849 A CN201180034849 A CN 201180034849A CN 103003948 B CN103003948 B CN 103003948B
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- nitride semiconductor
- diode
- diode according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010161402A JP5645304B2 (ja) | 2010-07-16 | 2010-07-16 | ダイオード |
JP2010-161402 | 2010-07-16 | ||
PCT/JP2011/002349 WO2012008074A1 (ja) | 2010-07-16 | 2011-04-22 | ダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103003948A CN103003948A (zh) | 2013-03-27 |
CN103003948B true CN103003948B (zh) | 2016-04-20 |
Family
ID=45469094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180034849.5A Active CN103003948B (zh) | 2010-07-16 | 2011-04-22 | 二极管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8809869B2 (zh) |
JP (1) | JP5645304B2 (zh) |
CN (1) | CN103003948B (zh) |
WO (1) | WO2012008074A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102113253B1 (ko) * | 2012-07-19 | 2020-05-21 | 삼성전자주식회사 | 질화물계 반도체 소자 |
KR101339762B1 (ko) * | 2012-08-17 | 2013-12-10 | 전자부품연구원 | 질화물 반도체 다이오드 |
KR101963227B1 (ko) * | 2012-09-28 | 2019-03-28 | 삼성전자주식회사 | 파워 스위칭 소자 및 그 제조방법 |
CN103872145A (zh) * | 2014-03-07 | 2014-06-18 | 电子科技大学 | 一种GaN异质结功率二极管 |
CN103904134B (zh) * | 2014-03-25 | 2017-01-11 | 中国科学院半导体研究所 | 基于GaN基异质结构的二极管结构及制作方法 |
FR3043839B1 (fr) | 2015-11-17 | 2018-04-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode a heterojonction ayant un courant de surcharge transitoire accru |
CN108666360B (zh) * | 2017-03-29 | 2021-08-03 | 北京大学 | 一种提高GaN L-FER反向击穿电压的器件结构及实现方法 |
TW201911583A (zh) | 2017-07-26 | 2019-03-16 | 新唐科技股份有限公司 | 異質接面蕭特基二極體元件 |
KR101920809B1 (ko) | 2017-08-28 | 2018-11-21 | 전북대학교산학협력단 | 고온-고전압용 정전류 제어 소자 및 그 제조방법 |
CN107978642B (zh) * | 2017-12-14 | 2021-02-02 | 中国科学院半导体研究所 | 一种GaN基异质结二极管及其制备方法 |
CN110034186B (zh) * | 2018-01-12 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于复合势垒层结构的iii族氮化物增强型hemt及其制作方法 |
WO2022110007A1 (zh) * | 2020-11-27 | 2022-06-02 | 苏州晶湛半导体有限公司 | 肖特基二极管及其制造方法 |
CN112768512A (zh) * | 2021-01-13 | 2021-05-07 | 西安电子科技大学 | 基于凹槽阳极结构的AlGaN基双沟道肖特基二极管及制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135640A (ja) * | 2008-12-05 | 2010-06-17 | Panasonic Corp | 電界効果トランジスタ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004068590A1 (en) * | 2003-01-29 | 2004-08-12 | Kabushiki Kaisha Toshiba | Power semiconductor device |
US6933544B2 (en) | 2003-01-29 | 2005-08-23 | Kabushiki Kaisha Toshiba | Power semiconductor device |
US8174048B2 (en) * | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
JP4398780B2 (ja) | 2004-04-30 | 2010-01-13 | 古河電気工業株式会社 | GaN系半導体装置 |
JP4567426B2 (ja) * | 2004-11-25 | 2010-10-20 | パナソニック株式会社 | ショットキーバリアダイオード及びダイオードアレイ |
US7821030B2 (en) * | 2005-03-02 | 2010-10-26 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
JP2008108870A (ja) * | 2006-10-25 | 2008-05-08 | Sharp Corp | 整流器 |
JP2008166640A (ja) * | 2007-01-04 | 2008-07-17 | Sharp Corp | 整流素子とそれを含む電力変換装置 |
JP4775859B2 (ja) * | 2007-08-24 | 2011-09-21 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
JP4761319B2 (ja) * | 2008-02-19 | 2011-08-31 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
JP2010087274A (ja) * | 2008-09-30 | 2010-04-15 | Sanken Electric Co Ltd | 半導体装置 |
-
2010
- 2010-07-16 JP JP2010161402A patent/JP5645304B2/ja active Active
-
2011
- 2011-04-22 CN CN201180034849.5A patent/CN103003948B/zh active Active
- 2011-04-22 WO PCT/JP2011/002349 patent/WO2012008074A1/ja active Application Filing
-
2012
- 2012-12-20 US US13/721,943 patent/US8809869B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135640A (ja) * | 2008-12-05 | 2010-06-17 | Panasonic Corp | 電界効果トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
JP5645304B2 (ja) | 2014-12-24 |
WO2012008074A1 (ja) | 2012-01-19 |
US8809869B2 (en) | 2014-08-19 |
US20130105815A1 (en) | 2013-05-02 |
JP2012023268A (ja) | 2012-02-02 |
CN103003948A (zh) | 2013-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103003948B (zh) | 二极管 | |
JP5530682B2 (ja) | 窒化物半導体装置 | |
JP5758132B2 (ja) | 半導体素子 | |
US9029915B2 (en) | Nitride semiconductor device | |
US7538366B2 (en) | Nitride semiconductor device | |
US7884395B2 (en) | Semiconductor apparatus | |
US8519439B2 (en) | Nitride semiconductor element with N-face semiconductor crystal layer | |
US20140110759A1 (en) | Semiconductor device | |
US9082884B2 (en) | Schottky diode | |
JP6244557B2 (ja) | 窒化物半導体デバイス | |
WO2011024440A1 (ja) | 窒化物半導体装置 | |
JPWO2017138505A1 (ja) | 半導体装置 | |
JP2006216671A (ja) | 窒素化合物半導体素子 | |
JP2011029507A (ja) | 半導体装置 | |
CN106206708A (zh) | 半导体装置 | |
JP2011204892A (ja) | 半導体装置及びその製造方法 | |
US20240313061A1 (en) | Nitride semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150929 Address after: Japan Osaka Applicant after: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20250102 Address after: Osaka, Japan Patentee after: Panasonic Holding Co.,Ltd. Country or region after: Japan Address before: Osaka Prefecture, Japan Patentee before: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT Co.,Ltd. Country or region before: Japan |
|
TR01 | Transfer of patent right |