CN102994974A - 一种厚氧化薄膜的制作方法 - Google Patents
一种厚氧化薄膜的制作方法 Download PDFInfo
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- CN102994974A CN102994974A CN201110267088XA CN201110267088A CN102994974A CN 102994974 A CN102994974 A CN 102994974A CN 201110267088X A CN201110267088X A CN 201110267088XA CN 201110267088 A CN201110267088 A CN 201110267088A CN 102994974 A CN102994974 A CN 102994974A
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CN201110267088XA CN102994974A (zh) | 2011-09-09 | 2011-09-09 | 一种厚氧化薄膜的制作方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105621347A (zh) * | 2014-10-31 | 2016-06-01 | 无锡华润上华半导体有限公司 | 二氧化硅薄膜的制备方法 |
CN111785640A (zh) * | 2020-08-26 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | 一种调整ldmos晶体管中氧化物场板角度的方法 |
CN114606476A (zh) * | 2020-12-03 | 2022-06-10 | 长鑫存储技术有限公司 | 薄膜的炉管沉积方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1104263A (zh) * | 1992-11-21 | 1995-06-28 | 克鲁伯·韦狄亚有限公司 | 工具和形成工具基体涂层的方法 |
US20050142795A1 (en) * | 2003-12-29 | 2005-06-30 | Sang-Tae Ahn | Method for isolating semiconductor devices with use of shallow trench isolation method |
CN101207154A (zh) * | 2006-12-22 | 2008-06-25 | 万国半导体股份有限公司 | 用高密度等离子氧化层作为多晶硅层间绝缘层的分隔栅的构成 |
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- 2011-09-09 CN CN201110267088XA patent/CN102994974A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1104263A (zh) * | 1992-11-21 | 1995-06-28 | 克鲁伯·韦狄亚有限公司 | 工具和形成工具基体涂层的方法 |
US20050142795A1 (en) * | 2003-12-29 | 2005-06-30 | Sang-Tae Ahn | Method for isolating semiconductor devices with use of shallow trench isolation method |
CN101207154A (zh) * | 2006-12-22 | 2008-06-25 | 万国半导体股份有限公司 | 用高密度等离子氧化层作为多晶硅层间绝缘层的分隔栅的构成 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105621347A (zh) * | 2014-10-31 | 2016-06-01 | 无锡华润上华半导体有限公司 | 二氧化硅薄膜的制备方法 |
CN111785640A (zh) * | 2020-08-26 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | 一种调整ldmos晶体管中氧化物场板角度的方法 |
CN114606476A (zh) * | 2020-12-03 | 2022-06-10 | 长鑫存储技术有限公司 | 薄膜的炉管沉积方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20130327 |