CN102978585A - Chemical vapor deposition device used for flat-panel display - Google Patents
Chemical vapor deposition device used for flat-panel display Download PDFInfo
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- CN102978585A CN102978585A CN2012102849659A CN201210284965A CN102978585A CN 102978585 A CN102978585 A CN 102978585A CN 2012102849659 A CN2012102849659 A CN 2012102849659A CN 201210284965 A CN201210284965 A CN 201210284965A CN 102978585 A CN102978585 A CN 102978585A
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Abstract
The invention discloses a chemical vapor deposition (CVD) device. The device comprises a base used to support a substrate, a vacuum chamber, and a vacuum draw control unit. In the vacuum chamber,a deposition technology is performed on the substrate, and the vacuum chamber comprises cylinder through-holes disposed on a central area on a bottom and a vacuum draw port which is disposed at an interval with thecylinder through-holes. Cylinders used to move the base up and down are disposed through the cylinder through-holes. The vacuum draw control unit is connected with the vacuum draw port and controls drawing positions in the vacuum chamber.
Description
The cross reference of related application
The right that the korean patent application case of filing an application to Korea S Department of Intellectual Property korean patent application case on September 16th, 10-2011-0089405 number 1 that the application's case is advocated to file an application to Korea S Department of Intellectual Property based on September 5th, 2011 is 10-2011-0093366 number, the content of described korean patent application case is incorporated herein in full with way of reference.
Technical field
The present invention relates to a kind of chemical vapor deposition unit for flat-panel monitor, more specifically, relate to following a kind of chemical vapor deposition unit for flat-panel monitor: wherein adjust the suction position in the vacuum chamber, so that the pressure distribution in the described vacuum chamber is even, therefore improve the deposition quality to substrate, and structurally improve the slit valve assembly that is used for putting into or taking out with respect to described vacuum chamber substrate.
Background technology
Flat-panel monitor has been widely used as indicating meter and the individual mobile terminal of televisor, computer etc.There are various flat-panel monitors, for example liquid-crystal display (liquid crystal display; LCD), plasma display (plasma display panel; PDP), Organic Light Emitting Diode (organic light emitting diode; OLED) etc.
Organic light emitting display (organic light emitting display; OLED) be the ultrathin display based on the luminous color display of the organic materials in himself, simple in structure and optical efficiency is high in view of it, organic light emitting display receives publicity as the quite promising flat-panel monitor of the next generation.
For making the substrate of this kind organic light emitting display (OLED), need repeatedly realize deposition and Patternized technique to inorganic materials, to form thin film transistor (thin film transistor at substrate; TFT), and subsequently depositing organic material is to form luminescence unit.
Usually, the inorganic materials that is deposited on the substrate of organic light emitting display (OLED) is by chemical vapour deposition (chemical vapor deposition; CVD) technique and depositing, this is because CVD technique is conducive to form various films.
Below will set forth simply CVD technique, its be for the manufacture of the depositing operation of the substrate of organic light emitting display (OLED) one of them.In CVD technique, externally be in plasmoid under the high frequency electric source effect and have high-octane silicon compound ion by electrode from the gas distribution plate sputter and be deposited on the glass substrate.This process realizes at the vacuum chamber that is used for CVD technique.
A kind of device for CVD comprises: vacuum chamber, in described vacuum chamber, glass substrate is carried out depositing operation; Electrode is arranged in the described vacuum chamber, and will be as the predetermined silicon compound ion sputtering of deposition material to the glass substrate as deposition object; Pedestal is arranged in the described vacuum chamber and supports described glass substrate; And post, it has the upper end of the central zone that is coupled to described pedestal and passes described vacuum chamber and the downward bottom that exposes, and supports described pedestal to make progress and to move down.
Described vacuum chamber is formed with the post through hole (column through hole) that passes for described post.Described post through hole is formed on the bottom centre zone of described vacuum chamber.
Simultaneously, be in vacuum state in the described vacuum chamber of CVD arts demand.For the inside that makes described vacuum chamber is in vacuum state, make described vacuum chamber be connected to vacuum pump.Therefore the described vacuum pump that is connected with described vacuum chamber is extracted gas out described vacuum chamber, and to make described vacuum chamber be vacuum.For realizing the suction operation of described vacuum pump, the vacuum take-off port is set in the bottom of described vacuum chamber and makes it be connected to described vacuum pump.
At the traditional C VD device that is used for flat-panel monitor as shown in Figure 1, post through hole 2 is formed in the central part of bottom of vacuum chamber 1, and vacuum take-off port 3 is arranged at and post through hole 2 isolated positions.In other words, vacuum take-off port 3 is arranged at the isolated position of central part of the bottom of wish and vacuum chamber 1.
Because vacuum take-off port 3 is arranged at the position that the central part with vacuum chamber 1 departs from, therefore when the gas in the vacuum chamber 1 is drawn out of by vacuum take-off port 3, the pressure distribution in the vacuum chamber 1 is understood inhomogeneous.
Therefore, the vacuum take-off port 3 that departs from the central part of vacuum chamber 1 can cause local pressure poor in vacuum chamber 1, and this local pressure missionary society makes the deposition quality badness on the glass substrate, thereby CVD technique is produced detrimentally affect.
In addition, substrate is carried out on the outer wall of vacuum chamber 1 of depositing operation be provided with shape as the gate G of slit therein, and near gate G, be provided with for closed and open the slit valve (not shown) of this slit.
Traditional slit valve is manufactured the chamber form individually, and optionally and in use is assembled to the outer wall of vacuum chamber 1.
Yet, because the outer wall of vacuum chamber 1 is made and be assembled to slit valve individually, so the outer wall of the vacuum chamber 1 that is assembled to of this slit valve and the dead space (dead space) that wherein accommodates between the outer wall of valve chamber (not shown) of this slit valve become larger.
Therefore, result is fallen into chaos near slit valve, and unnecessary dead space can increase the area occupied (footprint) of whole device.
Summary of the invention
One aspect of the present invention provides a kind of chemical vapor deposition unit for flat-panel monitor, adjusts the suction position in the vacuum chamber and make the pressure distribution in the described vacuum chamber even in described device, and therefore improve the deposition quality to substrate.
Another aspect of the present invention provides a kind of chemical vapor deposition unit for flat-panel monitor, and it comprises the slit valve assembly, with the traditional dead space between the outer wall of the outer wall that reduces the vacuum chamber that slit valve is assembled to and the valve chamber that wherein accommodates slit valve.
According to an aspect of the present invention, provide a kind of chemical vapor deposition (CVD) device for flat-panel monitor, described device comprises: pedestal is used for supporting substrate; Vacuum chamber, in described vacuum chamber, described substrate is carried out depositing operation, and described vacuum chamber comprise be formed on its bottom centre zone and be used in post that up/down moves described pedestal pass wherein the post through hole and with the isolated vacuum take-off port of described post through hole; And the vacuum take-off control unit, it is connected with described vacuum take-off port and controls suction position in the described vacuum chamber.
Described vacuum take-off control unit can comprise: suction control channel has greater than the cross-sectional area of described vacuum take-off port and with described vacuum take-off port and is connected; And suction control lid, be used for covering described suction control channel and being formed with a plurality of suction control punchs that are spaced apart from each other to penetrate mode from upside, to be connected with described suction control channel.
Described a plurality of suction control punch can arrange symmetrically with respect to the reference line that passes described post through hole and described vacuum take-off port.
Described a plurality of suction control punch can comprise: two suction control punchs that arrange symmetrically with respect to the reference line that passes described post through hole and described vacuum take-off port.
Described suction control channel can be in predetermined depth place, the bottom depression apart from described vacuum chamber.
Described suction control channel can have about the reference line that passes described post through hole and described vacuum take-off port and symmetrical annular shape or U-shaped shape one of them.
Described suction control lid can comprise: the top is formed with described a plurality of suction control punch on it; And sidepiece, extend from described top and be bent downwardly.
Described sidepiece can be formed with the groove from its bottom notch predetermined depth, and the described bottom of described vacuum chamber can be formed with rib, and described rib is wanted to be inserted in the described groove.
Described device also can comprise the O shape ring that is arranged between described groove and the described rib.
Described sidepiece can be formed with from the outstanding insertion protuberance in its bottom, and the described bottom of described vacuum chamber can be formed with patchhole, and described insertion protuberance forces to be matched with described patchhole.
Described device also can comprise:: base seat support, be coupled to the described post in the described vacuum chamber, at least one location at its top is touched on the rear portion that is supported in described pedestal, and is used for supporting described pedestal from downside, and is sagging to prevent described pedestal.
According to an aspect of the present invention, a kind of chemical vapor deposition (CVD) device for flat-panel monitor is provided, described device comprises: vacuum chamber, it comprises lower chambers and is coupled to the upper chamber at the top of described lower chambers, described lower chambers is provided with slit, puts into or take out substrate by described slit; And slit valve assembly, it is integrated in the described vacuum chamber, and open described slit with allow described substrate and enter in the described vacuum chamber or closed described slit to keep described vacuum chamber as vacuum, described slit valve assembly comprises: valve chamber is configured to share a sidewall of described lower chambers; And slit valve, be arranged in the described valve chamber also for the described slit of opened/closed.
Described valve chamber can comprise: common wall is formed with the shared sidewall for a sidewall of described vacuum chamber and described valve chamber of slit and quilt; And the valve wall, spaced apart and be formed with gate with described common wall, described gate is connected with described slit and allows described substrate turnover.
Described device also can comprise: valve gap removably is coupled to the top of described common wall and the top of described valve wall, and forms the space of sealing.
Described valve gap can be configured to weight, is applied to the moment of flexure (bending moment) of described common wall owing to the load of described upper chamber and prevents that described common wall is sagging owing to the described load of described upper chamber to be used for balance.
Described device also can comprise: the sag-resistant bolt is anchored between described valve wall and the described common wall and prevents described common wall because described upper chamber and sagging.
Described device also can comprise: the sag-resistant bolt is coupled between described valve gap and the described common wall and prevents described common wall because described upper chamber and sagging.
Described device also can comprise: well heater, it is coupled to the bottom of described valve gap and keeps the inside of described valve chamber to be in a certain temperature, solidifies with the gas that prevents from remaining in the described valve chamber.
Described slit valve can comprise: a pair of valve disc sheet (valve blade) closely contacts described slit and described gate and is used for closed described slit and described gate; Pressure cylinder (press cylinder) is used for described a pair of valve disc sheet is moved towards described slit and described gate respectively; And lift cylinder (lifting cylinder), be used for supporting described pressure cylinder, and described valve disc sheet is promoted to the position of closed described slit and described gate or falls described blade to open described slit and described gate.
Described device also can comprise: O shape ring is coupled to described valve disc sheet to keep described vacuum chamber as air-locked when described slit is closed.
Described device also can comprise: obfuscation module (fuzzy module), and for the cleaning of the inside that keeps described slit valve assembly.
Described obfuscation module can comprise: vacuum pump pipeline, the inside that is used for keeping described vacuum chamber are vacuum; Fuzzy gas feedthroughs is used for the supply of nitrogen to be used for cleaning the described inside of described valve chamber; And fuzzy gas outlet pipe line, be used for discharging the nitrogen of being supplied by described fuzzy gas feedthroughs.
As mentioned above, embodiment according to the present invention embodiment, a kind of CVD device for flat-panel monitor can be provided, wherein the vacuum take-off control unit is connected with the vacuum take-off port and controls suction position in the vacuum chamber, so that the pressure distribution in the vacuum chamber can be uniformly, thereby improvement is to the deposition quality of substrate.
In addition, embodiment according to the present invention embodiment, a kind of CVD device for flat-panel monitor can be provided, in described device, slit valve assembly and vacuum chamber are fabricated to one, with the traditional dead space between the outer wall of the outer wall that reduces the vacuum chamber that slit valve is assembled to and the valve chamber that wherein accommodates slit valve, thereby reduce the area occupied of whole device.
Description of drawings
Read by reference to the accompanying drawings following detailed description the in detail, can more clearly understand exemplary embodiment of the present invention, in the accompanying drawings:
Fig. 1 is for showing the skeleton view of the traditional C VD device that is used for flat-panel monitor;
Fig. 2 is for showing the view of the schematic structure of the CVD device that is used for flat-panel monitor of the first exemplary embodiment according to the present invention;
Fig. 3 is the decomposition diagram of the vacuum take-off control unit of the CVD device for flat-panel monitor shown in Figure 2;
Fig. 4 is the view of the couple state of vacuum take-off control unit shown in Figure 3;
Fig. 5 is the skeleton view of the suction control lid of vacuum take-off control unit shown in Figure 3;
Fig. 6 is the sectional view along line A-A intercepting shown in Figure 3;
Fig. 7 is the decomposition diagram of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the second exemplary embodiment according to the present invention;
Fig. 8 is the part sectioned view of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the 3rd exemplary embodiment according to the present invention;
Fig. 9 is the decomposition diagram of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the 4th exemplary embodiment according to the present invention;
Figure 10 is the sectional view along line B-B intercepting shown in Figure 9;
Figure 11 is for showing the view of the schematic structure of the CVD device that is used for flat-panel monitor of the 5th exemplary embodiment according to the present invention;
Figure 12 is the enlarged view of the structure of demonstration slit valve assembly shown in Figure 11;
Figure 13 is the enlarged view of demonstration according to the structure of the slit valve assembly with sag-resistant bolt of different instances embodiment; And
Figure 14 is for showing the view for the schematic structure of the obfuscation module that keeps slit valve assembly cleaning.
The main element description of symbols
1: vacuum chamber
2: the post through hole
3: the vacuum take-off port
G: gate
110: pedestal
120: post
130: vacuum chamber
131: the post through hole
133: the vacuum take-off port
135: rib
135b: rib
136:O shape ring
137: mounting groove
138: insertion groove/patchhole
140: the vacuum take-off control unit
140a: vacuum take-off control unit
141: suction control channel
141a: suction control channel
142: suction control lid
142a: suction control lid
143: the suction control punch
143a: suction control punch
144: the top
145: sidepiece
146: groove
147: insert protuberance/protuberance
150: electrode
151: gas distribution plate
152: supporting plate
D: cushioning pocket
P: substrate
C: reference line
210: vacuum chamber/upper chamber
211: wire
212: high frequency electric source
213: upper plate
215: gas supply unit
217: isolator
220: vacuum chamber/lower chambers
221: slit
230: pedestal
231: lifter pin
232: post
233: base seat support
240: electrode
241: supporting plate
243: the mount supports member
245: gas distribution plate
250: the lifting module
251: corrugated tube
260: the slit valve assembly
261: valve chamber
261a: common wall
261b: valve wall
261c: gate
262: slit valve
262a: valve disc sheet
262b: valve disc sheet
262c: pressure cylinder
262d: lift cylinder
263: valve gap
264: well heater
265a: sag-resistant bolt
265b: sag-resistant bolt
B: cushioning pocket
S: deposition space/depositing operation
270: obfuscation module
271: the vacuum pump pipeline
271a: fuzzy gas feedthroughs
272b: fuzzy gas outlet pipe line
Embodiment
For understanding fully the present invention and advantage thereof, hereinafter with reference to the accompanying drawing that is used for the illustration various embodiments of the present invention.
Hereinafter, will elaborate the present invention by being explained with reference to the drawings various embodiments of the present invention.Ref. No. identical among the figure is indicated identical element.
Before the reference accompanying drawing describes, below the flat-panel monitor of setting forth can be comprised in liquid-crystal display (LCD), plasma display (PDP) and the Organic Light Emitting Diode (OLED) any one.
Yet, in following each exemplary embodiment, will will be considered as flat-panel monitor for the large-size glass substrate of OLED with way of example.In addition, ' large-scale ' refers to that width and length are about 3 meters size for the 11st generation substrate.
For simplicity, the large-size glass substrate for OLED will be called substrate for short.
Fig. 2 is for showing the view of the schematic structure of the chemical vapor deposition (CVD) device that is used for flat-panel monitor of the first exemplary embodiment according to the present invention; Fig. 3 is the decomposition diagram of the vacuum take-off control unit of the CVD device for flat-panel monitor shown in Figure 2; Fig. 4 is the view of the couple state of demonstration vacuum take-off control unit shown in Figure 3; Fig. 5 is the skeleton view of the suction control lid of vacuum take-off control unit shown in Figure 3; And Fig. 6 is the sectional view along line A-A intercepting shown in Figure 3.
To shown in Figure 4, comprise according to the CVD device that is used for flat-panel monitor of the first exemplary embodiment: pedestal 110 is used for supporting substrate P such as Fig. 2; Vacuum chamber 130, in vacuum chamber 130, substrate P is carried out depositing operation, central part place on vacuum chamber 130 bottoms is formed with the post 120 that is used in upwards and moves down pedestal 110 and passes wherein post through hole 131, and vacuum chamber 130 is provided with and post through hole 131 isolated vacuum take-off port ones 33; And vacuum take-off control unit 140, be connected with vacuum take-off port one 33 and be used for adjusting suction position in the vacuum chamber 130.
For from downside supporting base 110, the base seat support (not shown) is set.Base seat support is coupled to the post 120 in the vacuum chamber 130, and contacts the rear surface of supporting base 110 at least one zone of its top surface, thereby the bottom of supporting base 110 is sagging to prevent pedestal 110.
In other words, base seat support contacts with the rear surface of pedestal 110 and supporting base 110, so that can prevent that pedestal 110 is sagging, thus improve the deposition quality to substrate P.
The upper end of post 120 is coupled to the central zone of pedestal 110, and the bottom of post 120 exposes along the downward direction of vacuum chamber 130, so that can make progress and move down ground supporting base 110.
Post through hole 131 is formed on the bottom of vacuum chamber 130, so that can be along the downward direction of vacuum chamber 130 and expose in the bottom of post 120.In addition, post through hole 131 is formed in the central part on the bottom of vacuum chamber 130, but so that the central part of post 120 supporting bases 110.
Vacuum take-off port one 33 is arranged on the bottom of vacuum chamber 130, and is oriented to post through hole 131 spaced apart.Therefore, vacuum take-off port one 33 is arranged at the position that the central part on the bottom with vacuum chamber 130 departs from.Vacuum take-off port one 33 is connected with the vacuum pump (not shown), so that can extract gas out vacuum chamber 130 through vacuum take-off port one 33 by the running of this vacuum pump.
In addition, be used for being arranged in the vacuum chamber 130 towards the electrode 150 of substrate P sputter-deposited materials (for example, predetermined silicon compound ion).
As shown in Figures 3 and 4, vacuum take-off control unit 140 comprises: suction control channel 141 has greater than the cross-sectional area of vacuum take-off port one 33 and with vacuum take-off port one 33 and is connected; And suction control cover 142, be used for covering suction control channel 141 and being formed with a plurality of suction control punchs 143 that are spaced apart from each other to penetrate mode from upside, with aspirate control channel 141 and be connected.
Vacuum pump is connected with vacuum take-off port one 33, and vacuum take-off port one 33 is connected with suction control channel 141, and suction control channel 141 is connected with suction control punch 143.Therefore, the gases in the vacuum chamber 130 are that running by described vacuum pump is inhaled into, passes suction control channel 141 through suction control punch 143 and is drawn out of vacuum chamber 130 by vacuum take-off port one 33.In other words, cover 142 suction control punch 143 according to suction control and control the interior suction position of vacuum chamber 130.
In addition, suction control channel 141 has with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33 and symmetrical U-shaped shape.
Reference line C is to pass the virtual line at the center of the center of post through hole 131 and vacuum take-off port one 33.
In this exemplary embodiment, described a plurality of suction control punchs 143 arrange symmetrically with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33.
In this exemplary embodiment, two the suction control punchs 143 of described a plurality of suction control punchs 143 for arranging symmetrically with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33, but the present invention is limited to this.
As shown in Figures 3 and 4, in this exemplary embodiment, two suction control punchs 143 are formed at respectively the position that the central part with vacuum chamber 130 departs from, but are mutually symmetrical with respect to reference line C.
Owing to the suction control punch 143 that is used for from vacuum chamber 130 sucks gases is mutually symmetrical with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33, therefore can make pressure distribution in the vacuum chamber 130 with respect to reference line C and balance.
In other words, at the CVD device that is used for flat-panel monitor according to this exemplary embodiment, even vacuum take-off port one 33 departs from the central part of vacuum chamber 130, also can make pressure distribution in the vacuum chamber 130 with respect to the reference line C balance by vacuum take-off control unit 140.
Because vacuum take-off control unit 140 is with the gas in the symmetric mode aspiration vacuum chamber 130, so the inside of vacuum chamber 130 can have uniform pressure distribution, and it is poor can not local pressure to occur.The uniform pressure distribution of this kind in the vacuum chamber 130 will improve the deposition quality to substrate P.
Simultaneously, as shown in Figure 5, suction control is covered 142 and comprised: top 144 is formed with described a plurality of suction control punch 143 on it; And sidepiece 145,144 extend and are bent downwardly from the top.Suction control is covered 142 top 144 and is had the U-shaped shape, and described U-shaped shape is corresponding to the suction control channel 141 with U-shaped shape.
In addition, suction control must cover 142 bottoms that are sealed to vacuum chamber 130, so that the gas in the vacuum chamber 130 can't be under the condition of not passing suction control punch 143 and be sucked into and aspirate control channel 141.
Therefore, as shown in Figure 6, in this exemplary embodiment, sidepiece 145 is formed with the groove 146 from its bottom notch predetermined depth, and the bottom of vacuum chamber 130 is formed with rib 135, and rib 135 is wanted to be inserted in the groove 146.
In other words, the rib 135 that is arranged on the bottom of vacuum chamber 130 is inserted in the groove 146 that caves in the bottom of sidepiece 145, therefore and will aspirate control and cover 142 and be sealed to vacuum chamber 130, so that can only being sucked into via aspirating control punch 143, the gases in the vacuum chamber 130 aspirate control channel 141.
Hereinafter, the operation of the CVD device that is used for flat-panel monitor of exemplary embodiment according to the present invention will be set forth.
The CVD technique that is used for for carrying out flat-panel monitor, the inside that must make vacuum chamber 130 are vacuum.
For gas being extracted out vacuum chamber 130, make vacuum pump be connected to vacuum take-off port one 33.Herein, vacuum take-off port one 33 is connected with suction control channel 141, and suction control channel 141 is connected with suction control punch 143.
When vacuum pump operated, the gas in the vacuum chamber 130 was sucked into suction control channel 141 via suction control punch 143.
Suction control punch 143 forms with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33 and symmetrically, and therefore makes pressure distribution in the vacuum chamber 130 with respect to reference line C and balance.
In other words, although vacuum take-off port one 33 is arranged at around the center of vacuum chamber 130 with eccentric manner, yet the suction control punch 143 that be used for to suck the gas in the vacuum chamber 130 forms symmetrically with respect to reference line C, thereby makes pressure distribution in the vacuum chamber 130 with respect to reference line C and balance.
Gas in the vacuum chamber 130 that is inhaled into through suction control punch 143 is drawn out of vacuum chamber 130 via suction control channel 141 and by vacuum take-off port one 33.
At this moment, suction control channel 141 also forms symmetrically about the reference line C of passing post through hole 131 and vacuum take-off port one 33, so that when the gas stream in the vacuum chamber 130 is crossed suction control channel 141, the pressure distribution in the vacuum chamber 130 can be with respect to reference line C and balance.
Therefore, have uniform pressure distribution and can not form local pressure poor according to the CVD device that is used for flat-panel monitor of this exemplary embodiment at vacuum chamber, this is because vacuum take-off control unit 140 is extracted gas out vacuum chamber 130 with symmetric mode.Uniform gas distribution in the vacuum chamber 130 will improve the deposition quality on the substrate P.
In addition, the suction position of vacuum chamber 130 is controlled in the position of covering 142 suction control punch 143 according to the CVD device that is used for flat-panel monitor of this exemplary embodiment according to suction control, even and therefore so that the vacuum take-off port one 33 that is connected with vacuum pump be positioned prejudicially around the center of vacuum chamber 130, the internal pressure of vacuum chamber 130 also is uniformly, thereby has improvement to the advantage of the deposition quality of substrate P.
Fig. 7 is the decomposition diagram of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the second exemplary embodiment according to the present invention.
The second exemplary embodiment is textural different from the first exemplary embodiment at vacuum take-off control unit 140a only, and other structures then are equivalent to the correspondence structure of Fig. 2 and the first exemplary embodiment shown in Figure 6.Therefore, in the following explanation according to the second exemplary embodiment, the structure of vacuum take-off control unit 140a will be set forth mainly.
Vacuum take-off control unit 140a comprises: suction control channel 141a has greater than the cross section of vacuum take-off port one 33 and with vacuum take-off port one 33 and is connected; And suction control cover 142, be used for covering suction control channel 141a and being formed with a plurality of suction control punch 143a from upside, described a plurality of suction control punch 143a penetrate suction control cover 142 with aspirate control channel 141 and be connected and be spaced apart from each other.
In this exemplary embodiment, suction control punch 143a and suction control channel 141a have respectively with respect to the reference line C of passing post through hole 131 and vacuum take-off port one 33 and symmetrical shape so that the internal pressure in the vacuum chamber 130 distribute can be with respect to reference line C and balance.The uniform pressure distribution of this kind in the vacuum chamber 130 can improve the deposition quality to substrate P.
Fig. 8 is the part sectioned view of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the 3rd exemplary embodiment according to the present invention.
The 3rd exemplary embodiment only is being arranged at the textural different with the first exemplary embodiment of O shape ring 136 between groove 146 and the rib 135a, and other structures then are equivalent to the correspondence of Fig. 2 and the first exemplary embodiment shown in Figure 6 and construct.Therefore, in the following explanation according to the 3rd exemplary embodiment, the structure of the O shape ring 136 that is arranged between groove 146 and the rib 135a will be set forth mainly.
As shown in Figure 8, groove 146 is from the predetermined degree of depth of the bottom notch of sidepiece 145, and rib 135a is arranged on the bottom of vacuum chamber 130, in order to be inserted in the groove 146.
In other words, rib 135a is formed with the mounting groove 137 of wherein laying O shape ring 136, so that O shape ring 136 can be placed on the mounting groove set in rib 135a 137.
If the rib 135a that will be arranged on the bottom of vacuum chamber 130 is inserted in the groove 146 that caves in the bottom of sidepiece 145, then is arranged at more firmly sealing suction of O shape ring 136 control between groove 146 and the rib 135a and covers 142 and vacuum chamber 130.Therefore, the gas in the vacuum chamber 130 can be under the condition of not passing suction control punch 143 and be sucked into suction control channel 141.
Fig. 9 is the decomposition diagram of the vacuum take-off control unit of the CVD device that is used for flat-panel monitor of the 4th exemplary embodiment according to the present invention; And Figure 10 is the sectional view along line B-B intercepting shown in Figure 9.
The 4th exemplary embodiment is only being inserted the textural different from the first exemplary embodiment of protuberance 147 and insertion groove 138, other structures then are equivalent to the correspondence structure of Fig. 2 and the first exemplary embodiment shown in Figure 6, it is outstanding from the bottom of sidepiece 145 wherein to insert protuberance 147, and insertion groove 138 is arranged on the bottom of vacuum chamber 130 and with protuberance 147 and forces to cooperate.Therefore, in the following explanation according to the 4th exemplary embodiment, the structure of insertion protuberance 147 of the insertion groove of vacuum chamber 130 will set forth be forced mainly to be matched with.
Suction control is covered 142 and comprised: top 144 is formed with described a plurality of suction control punch 143 on it; And sidepiece 145,144 extend and are bent downwardly from the top.
When in the insertion groove 138 of forcing to be matched with from the outstanding insertion protuberance 147 in the bottom of sidepiece 145 on the bottom that is arranged on vacuum chamber 130, suction control is covered 142a and will be sealed in the vacuum chamber 130.Therefore, the gas in the vacuum chamber 130 can be under the condition of not passing suction control punch 143 and be sucked into suction control channel 141.
Figure 11 is for showing the view of the schematic structure of the CVD device that is used for flat-panel monitor of the 5th exemplary embodiment according to the present invention.
As shown in figure 11, comprise according to the CVD device that is used for flat-panel monitor of the 5th exemplary embodiment: vacuum chamber 210,220, be provided with slit 221, put into or take out substrate P by slit 221; And slit valve assembly 260, it is integrated in the vacuum chamber 210 and allows the substrate P turnover.
Vacuum chamber 210,220 is divided into upper chamber 210 and lower chambers 220 significantly.Upper chamber 210 and lower chambers 220 are assembled into one, to form therein deposition space S.Therefore deposition space S and external isolation also are vacuum when carrying out depositing operation.
In upper chamber 210, electrode 240 is along arranged transversely.Electrode 240 comprises: gas distribution plate 245 is arranged in the front side of lower chambers 220; And supporting plate 241, be arranged at the back of gas distribution plate 245, and and gas distribution plate 245 between leave cushioning pocket B.
In addition, between gas distribution plate 245 and supporting plate 241, be provided with mount supports member 243.Mount supports member 243 not only is used for covering cushioning pocket B and leaks with the deposition material that prevents cushioning pocket B, also for support suspending of gas distribution plate 245 against supporting plate 241.Mount supports member 243 also is used for compensation and is being heated to the thermal expansion of about 200 ℃ gas distribution plate 245 at least one direction of X-axis, Y-axis and Z axis during the depositing operation.
In addition, between supporting plate 241 and upper chamber 210, be provided with isolator 217, to prevent supporting plate 241 directly outer wall and the conduction of contact upper chamber 210.Isolator 217 can be made by Teflon (Teflon) etc.Around supporting plate 241, the board mount (not shown) can be set to support supporting plate 241 against upper chamber 210.
Be provided with upper plate 213 at the top of upper chamber 210, upper plate 213 not only is used for covering the top of upper chamber 210, also is coupled for supported plate (not shown) and with this back up pad.
The back up pad (not shown) comprises: gas supply unit 215, be positioned on the top of described back up pad, and be used for the supply process gas; High frequency electric source 212 is electrically connected to the supporting plate 241 that the inboard with upper chamber 210 is coupled via wire 211; The gas transmission pipeline (not shown) is arranged between gas supply unit 215 and the high frequency electric source 212, so that gas supply unit 215 can be connected with the gas introduction tube road, and as the transport path of the process gas of introducing from gas supply unit 215; And shielded cell (shielding box does not show among the figure), be used for shroud gas transport pipe (not shown) and outer peripheral areas thereof.
By this kind structure, process gas from gas supply unit 215 supplies can be provided to cushioning pocket B through gas introduction tube road (not shown), and the electrode that supporting plate 241 is used as based on the High frequency power of supplying from high frequency electric source 212, and therefore make the process gas that is directed among the cushioning pocket B be in plasmoid.
Although do not show among the figure that the bottom section in lower chambers 220 is provided with the gas diffusion plate (not shown), and this gas diffusion plate diffuses to substrate P again with the process gas among the deposition space S.
In lower chambers 220, be provided with: pedestal 230 wherein is mounted with substrate P; And base seat support 233, be used for the bottom support pedestal 230 from pedestal 230.
When pedestal 230 moved down, the bottom of lifter pin 231 was pressed against the bottom of lower chambers 220, and its upper end is outstanding from the top of pedestal 230.The outstanding upper end of lifter pin 231 promotes substrate P, and therefore makes substrate P and pedestal 230 spaced apart.
On the contrary, when pedestal 230 moved up, lifter pin 231 moved down with respect to the top of pedestal 230, and therefore made substrate P become top close contact with pedestal 230.In other words, lifter pin 231 is used for forming the space in addition between substrate P and pedestal 230, so that the mechanical arm (not shown) can grasp the substrate P that is loaded in the pedestal 230.
Simultaneously, if pedestal 230 not only heavily but also large, then pedestal 230 may be sagging, and therefore make the substrate P on the top that is loaded into pedestal 230 sagging.As shown in figure 11, in this exemplary embodiment, base seat support 233 is arranged at post 232 tops and supporting base 230 stably.Yet the present invention is limited to this, and if pedestal 230 can be not sagging, can omit base seat support 233.
When pedestal 230 is promoted by lifting module 250 and falls, between post 232 and lower chambers 220, need not to be equipped with the space.Therefore, the corresponding zone of post 232 lower chambers 220 of passing is provided with corrugated tube 251 with the outside around post 232.Corrugated tube 251 expands when pedestal 230 moves down, and corrugated tube 251 shrinks when pedestal 230 moves up.
The outer wall of lower chambers 220 is formed with slit 221, and predetermined working robot's (not shown) is put into substrate P or take out deposition space S by slit 221.Optionally open or closure by its peripheral slit valve assembly 260 by being coupled to for slit 221.
As mentioned above, traditional valve chamber that is used for holding slit valve is made and optionally is coupled to the outer wall of vacuum chamber independently.In this kind situation, can produce dead space in the part that the outer wall of the outer wall of valve chamber and vacuum chamber is coupled therein, thereby increase the area occupied of whole device.
At the CVD device that is used for flat-panel monitor according to this exemplary embodiment, slit valve assembly 260 forms as one with vacuum chamber 210,220, thereby reduces dead space.
Figure 12 is the enlarged view of the structure of demonstration slit valve assembly shown in Figure 11.
With reference to Figure 12, the slit valve assembly 260 in this exemplary embodiment comprises: valve chamber 261, and it is integrated in the lower chambers 220; Slit valve 262 is arranged in the valve chamber 261; And valve gap 263, be used for covering valve chamber 261.
The conventional cases of being made individually and be coupled to lower chambers with valve chamber wherein is opposite, and the outer wall of lower chambers 220 1 sides is shared the outer wall for valve chamber 261 1 sides, so that the dead space between lower chambers 220 and the slit valve assembly 260 can reduce significantly.
Simultaneously, slit valve 262 comprises: a pair of valve disc sheet 262a and 262b closely contact slit 221 and gate 261c and are used for closed slits 221 and gate 261c; Pressure cylinder 262c is used for described a pair of valve disc sheet 262a and 262b are moved towards slit 221 and gate 261c; And lift cylinder 262d, be used for abutment pressure cylinder 262c and promote and fall pressure cylinder 262c.
Described a pair of valve disc sheet 262a and 262b are enough large, and covering slit 221 and gate 261c fully, and O shape ring can additionally be coupled to for the valve disc sheet 262b that covers slit 221, so that vacuum chamber 210,220 can remain vacuum.
If palpus closed slits 221 and gate 261c, then be connected to the lift cylinder 262d meeting adherence pressure cylinder 262c of pressure cylinder 262c until valve disc sheet 262a and 262b are positioned at the central axis place of slit 221 and gate 261c, if and must open slit 221 and gate 261c, then lift cylinder 262d can fall pressure cylinder 262c.Lift cylinder 262d also can be configured to the cylinder by oil pressure or air pressure driving.
A side and the upper chamber 210 of the common wall 261a that one side of valve gap 263 is coupled to are coupled.As mentioned above, upper chamber 210 is equipped with various deposition device (for example electrode 240), and therefore can apply relatively high load to common wall 261a.
Therefore particularly, upper chamber 210 only is coupled to the side of common wall 261a, can apply eccentric load based on upper chamber 210 to common wall 261a.Therefore, may make sagging aggravation.
Plant here situation for anti-, in this embodiment, valve gap 263 is configured to weight, is applied to the moment of flexure of common wall 261a based on the load of upper chamber 210 to be used for balance.In other words, result from upper chamber 210 with respect to the clockwise moment of flexure of the central axis of common wall 261a with result from the counterclockwise moment of flexure of valve gap 263 and cancel out each other, thereby the sagging of common wall 261a minimized.
Simultaneously, well heater 264 is coupled to the inboard of valve gap 263.Well heater 264 raises the temperature of the internal space of valve chamber 261.
In this exemplary embodiment, valve chamber 261 forms as one with lower chambers 220, so that the process gas in the vacuum chamber 210,220 can be directed in the valve chamber 261.At this moment, if the internal temperature of valve chamber 261 reduces, then some gas may solidify and produces particle.
Plant here phenomenon for anti-, keep consistently the internal temperature of valve chamber 261 by well heater 264, thereby prevent from producing particle owing to the curing of residual gas.
Yet this kind running of well heater 264 may aggravate the sagging of common wall 261a that upper chamber 210 is coupled to.Particularly, the valve gap 263 that well heater 264 is installed is different from common wall 261a on thermal expansivity, and is sagging so that the heating of well heater 264 may cause common wall 261a owing to thermal distortion.
Plant here situation for anti-, between common wall 261a and valve wall 261b, be fastened with sag-resistant bolt 265a.
Sag-resistant bolt 265a connects common wall 261a and valve wall 261b, thereby prevents common wall 261a because the load of upper chamber 210 and thermal distortion and sagging.Have in the situation of sag-resistant bolt 265a in this kind increase, the weight of valve gap 263 can be designed to the weight less than valve gap shown in Figure 12.
Figure 13 is the enlarged view of demonstration according to the structure of the slit valve assembly with sag-resistant bolt of different instances embodiment.
According to this exemplary embodiment, sag-resistant bolt 265b not only is used for preventing that common wall 261a is sagging, also is used for strengthening the coupling between valve gap 263 and the valve chamber 261.
Figure 14 is for showing the view for the schematic structure of the obfuscation module that keeps slit valve assembly cleaning.
In this exemplary embodiment, obfuscation module 270 removes particle and prevents that particle from entering in the vacuum chamber 210,220 in valve chamber 261.Obfuscation module 270 comprises: vacuum pump pipeline 271, the inside that be used for to keep valve chamber 261 are vacuum; Fuzzy gas feedthroughs 272a is used for the supply of nitrogen to be used for the inside of cleaning valve chamber 261; And fuzzy gas outlet pipe line 272b, be used for discharging the nitrogen of being supplied by fuzzy gas feedthroughs 272a.
At first, by under the state of slit valve 262 closed slits 221 and gate 261c through vacuum pump pipeline 271 and from valve chamber exhausted air and residual gas, thereby realize cleaning to valve chamber 261.At this moment, make well heater 264 work and residual gas can and not solidified through 271 discharges of vacuum pump pipeline.
Gas in valve chamber guides to nitrogen in the valve chamber 261 through fuzzy gas feedthroughs 272a after vacuum pump pipeline 271 is discharged.Simultaneously, nitrogen is discharged in valve chamber 261 through fuzzy gas outlet pipe line 272b.
When introducing and discharge nitrogen, the residual gas in the valve chamber 261 and particle can be discharged from nitrogen.
When the fuzzy loop ends of nitrogen, the residue nitrogen in the valve chamber 261 is discharged through vacuum pump pipeline 271.
Although show particularly and set forth the present invention with reference to each exemplary embodiment of the present invention, However, it should be understood that and under the condition of the spirit that does not break away from the claims of enclosing and scope, to make various changes to it in form and details.
Claims (22)
1. chemical vapor deposition unit that is used for flat-panel monitor, described device comprises:
Pedestal is used for supporting substrate;
Vacuum chamber in described vacuum chamber described substrate is carried out depositing operation, and described vacuum chamber comprises: the post through hole is formed on the bottom centre zone of described vacuum chamber and is used in the post that up/down moves described pedestal and passes wherein; And the vacuum take-off port, spaced apart with described post through hole; And
The vacuum take-off control unit, it is connected with described vacuum take-off port and controls suction position in the described vacuum chamber.
2. chemical vapor deposition unit as claimed in claim 1 is characterized in that, described vacuum take-off control unit comprises:
Suction control channel has greater than the cross-sectional area of described vacuum take-off port and with described vacuum take-off port and is connected; And
Suction control lid is used for covering described suction control channel and being formed with a plurality of suction control punchs that are spaced apart from each other to penetrate mode from upside, to be connected with described suction control channel.
3. chemical vapor deposition unit as claimed in claim 2 is characterized in that, described a plurality of suction control punchs arrange symmetrically with respect to the reference line that passes described post through hole and described vacuum take-off port.
4. chemical vapor deposition unit as claimed in claim 2 is characterized in that, described a plurality of suction control punchs comprise: two suction control punchs that arrange symmetrically with respect to the reference line that passes described post through hole and described vacuum take-off port.
5. chemical vapor deposition unit as claimed in claim 2 is characterized in that, described suction control channel is from the predetermined degree of depth of the bottom notch of described vacuum chamber.
6. chemical vapor deposition unit as claimed in claim 5 is characterized in that, described suction control channel have about the reference line that passes described post through hole and described vacuum take-off port and symmetrical annular shape or U-shaped shape one of them.
7. chemical vapor deposition unit as claimed in claim 5 is characterized in that, described suction control lid comprises:
The top is formed with described a plurality of suction control punch on it; And
Sidepiece extends from described top and is bent downwardly.
8. chemical vapor deposition unit as claimed in claim 7 is characterized in that, described sidepiece is formed with the groove from its bottom notch predetermined depth, and
The described bottom of described vacuum chamber is formed with rib, and described rib is wanted to be inserted in the described groove.
9. chemical vapor deposition unit as claimed in claim 8 also comprises the O shape ring that is arranged between described groove and the described rib.
10. chemical vapor deposition unit as claimed in claim 7 is characterized in that, described sidepiece is formed with from the outstanding insertion protuberance in its bottom, and
The described bottom of described vacuum chamber is formed with patchhole, and described insertion protuberance forces to be matched with described patchhole.
11. chemical vapor deposition unit as claimed in claim 1, also comprise: base seat support, be coupled to the described post in the described vacuum chamber, at least one location at its top is touched on the rear portion that is supported in described pedestal, and for the downside that supports described pedestal, sagging to prevent described pedestal.
12. a chemical vapor deposition unit that is used for flat-panel monitor, described device comprises:
Vacuum chamber, it comprises: lower chambers, be provided with slit, put into or take out substrate by described slit; And upper chamber, be coupled to the top of described lower chambers; And
The slit valve assembly, it is integrated in the described vacuum chamber, and open described slit with allow described substrate and enter in the described vacuum chamber or closed described slit keeping described vacuum chamber as vacuum,
Described slit valve assembly comprises:
Valve chamber is configured to share a sidewall of described lower chambers; And
Slit valve is arranged in the described valve chamber also for the described slit of opened/closed.
13. chemical vapor deposition unit as claimed in claim 12 is characterized in that, described valve chamber comprises:
Common wall is formed with the shared sidewall for a sidewall of described vacuum chamber and described valve chamber of slit and quilt; And
The valve wall, spaced apart and be formed with gate with described common wall, described gate is connected with described slit and allows described substrate turnover.
14. chemical vapor deposition unit as claimed in claim 13 also comprises: valve gap removably is coupled to the top of described common wall and the top of described valve wall, and forms the space of sealing.
15. chemical vapor deposition unit as claimed in claim 14, it is characterized in that, described valve gap is configured to weight, to be applied to the moment of flexure of described common wall and to prevent that described common wall is sagging owing to the described load of described upper chamber for the load of balance owing to described upper chamber.
16. chemical vapor deposition unit as claimed in claim 14 also comprises: the sag-resistant bolt is anchored between described valve wall and the described common wall and prevents described common wall because described upper chamber and sagging.
17. chemical vapor deposition unit as claimed in claim 14 also comprises: the sag-resistant bolt is coupled between described valve gap and the described common wall and prevents described common wall because described upper chamber and sagging.
18. chemical vapor deposition unit as claimed in claim 14 also comprises: well heater, it is coupled to the bottom of described valve gap and keeps the inside of described valve chamber to be in a certain temperature, solidifies with the gas that prevents from remaining in the described valve chamber.
19. chemical vapor deposition unit as claimed in claim 13 is characterized in that, described slit valve comprises:
A pair of valve disc sheet closely contacts described slit and described gate and is used for closed described slit and described gate;
Pressure cylinder is used for described a pair of valve disc sheet is moved towards described slit and described gate respectively; And
Lift cylinder is used for supporting described pressure cylinder, and described valve disc sheet is promoted to the position of closed described slit and described gate or falls described valve disc sheet to open described slit and described gate.
20. chemical vapor deposition unit as claimed in claim 19 also comprises: O shape ring is coupled to described valve disc sheet to keep described vacuum chamber as air-locked when described slit is closed.
21. chemical vapor deposition unit as claimed in claim 12 also comprises: obfuscation module, for the cleaning of the inside that keeps described slit valve assembly.
22. chemical vapor deposition unit as claimed in claim 21 is characterized in that, described obfuscation module comprises:
Vacuum pump pipeline, the inside that is used for keeping described vacuum chamber are vacuum;
Fuzzy gas feedthroughs is used for the supply of nitrogen to be used for cleaning the described inside of described valve chamber; And
Fuzzy gas outlet pipe line is used for discharging the nitrogen of being supplied by described fuzzy gas feedthroughs.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2011-0089405 | 2011-09-05 | ||
| KR1020110089405A KR101297375B1 (en) | 2011-09-05 | 2011-09-05 | Chemical Vapor Deposition Apparatus for Flat Display |
| KR10-2011-0093366 | 2011-09-16 | ||
| KR1020110093366A KR101310763B1 (en) | 2011-09-16 | 2011-09-16 | Chemical Vapor Deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102978585A true CN102978585A (en) | 2013-03-20 |
Family
ID=47852917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102849659A Pending CN102978585A (en) | 2011-09-05 | 2012-08-06 | Chemical vapor deposition device used for flat-panel display |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102978585A (en) |
| TW (1) | TW201311926A (en) |
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|---|---|---|---|---|
| KR100389449B1 (en) * | 2001-06-26 | 2003-06-27 | 주성엔지니어링(주) | vacuum plate have symmetrical air-load block |
| US20060263522A1 (en) * | 2005-05-19 | 2006-11-23 | Piezonics Co., Ltd. | Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof |
| CN1871718A (en) * | 2003-11-12 | 2006-11-29 | E.I.内穆尔杜邦公司 | Encapsulation assembly for electronic devices |
| CN101126155A (en) * | 2006-08-03 | 2008-02-20 | Sfa工程股份有限公司 | Chemical vapor deposition apparatus |
| CN101285177A (en) * | 2007-04-10 | 2008-10-15 | Sfa工程股份有限公司 | Chemical vapor deposition apparatus for planer display |
| CN101840849A (en) * | 2009-03-19 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Semiconductor process equipment and O-shaped ring thereof |
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2012
- 2012-07-03 TW TW101123861A patent/TW201311926A/en unknown
- 2012-08-06 CN CN2012102849659A patent/CN102978585A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100389449B1 (en) * | 2001-06-26 | 2003-06-27 | 주성엔지니어링(주) | vacuum plate have symmetrical air-load block |
| CN1871718A (en) * | 2003-11-12 | 2006-11-29 | E.I.内穆尔杜邦公司 | Encapsulation assembly for electronic devices |
| US20060263522A1 (en) * | 2005-05-19 | 2006-11-23 | Piezonics Co., Ltd. | Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof |
| CN101126155A (en) * | 2006-08-03 | 2008-02-20 | Sfa工程股份有限公司 | Chemical vapor deposition apparatus |
| CN101285177A (en) * | 2007-04-10 | 2008-10-15 | Sfa工程股份有限公司 | Chemical vapor deposition apparatus for planer display |
| KR100877822B1 (en) * | 2007-04-10 | 2009-01-12 | 주식회사 에스에프에이 | Chemical vapor deposition apparatus for flat display |
| CN101840849A (en) * | 2009-03-19 | 2010-09-22 | 台湾积体电路制造股份有限公司 | Semiconductor process equipment and O-shaped ring thereof |
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|---|---|
| TW201311926A (en) | 2013-03-16 |
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Application publication date: 20130320 |