CN102959045B - 发光材料和具有这种发光材料的光源 - Google Patents
发光材料和具有这种发光材料的光源 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 86
- 150000004767 nitrides Chemical class 0.000 claims abstract description 14
- 239000012190 activator Substances 0.000 claims abstract description 9
- 125000002091 cationic group Chemical group 0.000 claims abstract description 3
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 33
- 239000011575 calcium Substances 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 10
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000168254 Siro Species 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- SSKPSTBQVXGUME-UHFFFAOYSA-N [Eu].[Eu] Chemical compound [Eu].[Eu] SSKPSTBQVXGUME-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明涉及氮化物或氮氧化物发光材料种类中的一种新型发光材料，其具有至少一种阳离子M和一种激活剂D，阳离子的份额X被Cu所代替。该发光材料适用于光源。
Description
技术领域
本发明涉及一种根据权利要求1的前序部分所述的发光材料和一种根据权利要求8所述的设计具有这种发光材料的光源，特别是涉及一种光转换式LED。这种光转换式LED特别适用于普通照明。
背景技术
由EP1696016中公开了一种光转换式LED，它使用Calsin作为红色发光材料。Calsin这个概念指的是CaAlSiN氮化物。
发明内容
本发明的目的在于，提供一种根据权利要求1的前序部分所述的发光材料，它能够让氮化物发光材料的特性有针对性地适应具体的要求。
该目的通过权利要求1所述的标志性特征得以实现。
特别有利的构造方案存在于从属权利要求中。
根据本发明，现在提供一种新型氮化物或氮氧化物发光材料，例如Calsin或者硅基氮化物（Nitridosilikat）M2Si5N8:Eu。大量这种发光材料、特别是利用D作为激活剂的M2Si5N8:D类型的氮化物，在LED中工作时会经受明显的转换损耗。在短时间内（典型地为1000小时），这种LED会损失多达50%的转换效率。这会导致色度点明显不稳定。在普通照明中，白光LED的意义越来越重大。特别是对色温低并且显色性良好并且同时效率高的暖白光LED的需求在增长。以即将禁用能效低的常规白炽灯为背景，具有尽可能优良的显色性（CRI显色指数）的可替代光源的意义越来越重大。许多消费者看重具有类似于白炽灯的光谱的灯具。
这些发光材料必须满足一系列要求：相对于化学影响，例如氧、湿度、与浇铸材料的相互反应、以及相对于辐射，要有很高的稳定性。为了确保在系统温度升高的情况下有稳定的色度点，此外还需要具有很低的温度猝灭效应的发光材料。
本发明的基础在于提供来自氮化物或氮氧化物材料种类中的发光材料，它们通过在晶格里加入铜离子而有了更好的属性。Cu在这里并不作为掺杂物，而是作为主晶格的组成部分。
这种用Cu改性的发光材料特别地仅掺杂了Eu，或者是与其他的激活剂添加在一起的发光材料。
氮化物的发光材料系统：如M2-xCuxSi5N8：Eu，M为Sr、Ca、Ba，其中发光材料的基本类型由US6682663公知；以及Ca1-xCuxAlSiN3：Eu，其中发光材料的基本类型由EP1696016中公知；以及氮氧化物的发光材料，如M1-xCuxSi2N202：Eu，M为Sr、Ca、Ba，其中发光材料的基本类型由WO2004/030109中公知；以及此外还有alpha-SiAlONe，其中这种发光材料的基本类型由US6657379中公知。具体来说，其中涉及的是根据公式Mp/2Si12-p-qAlp+qOqN16-q:Eu2+的基本类型，M单独为Ca或者为其与Sr和Mg的组合，q为0至2.5，并且P为0.5至3,。优选地为p选择一个较高值，也就是p=2至3，并且为q选择一个较低值，也就是q=0至1。代替纯Al，特别可以使用一种Al和Ga的混合物，其具有直至20mol-%份额的Ga。
通常Eu的份额占阳离子M的0.2至15Mol.-%，特别是占0.5至8Mol.-%。主晶格上Cu的份额优选地占0.05至5Mol.-%。
这种发光材料被用在白光LED中和按需选色（Color-on-Demand）的LED中。大量专利都描述了发光材料化学计量学的变化方案，其通过加入和主晶格无关的离子和属性由此获得的改变来实现。
元素铜在CRT发光材料硫化锌（Zinksulfid）中被用作掺杂元素。在WO2006/068360中，铜被称为氧化物发光材料系统的晶格组成部分，迄今为止还尚未被告知关于将铜加入氮化物或者氮氧化物发光材料中的情况。因为铜离子相比碱土离子具有不同的特性，例如电荷、负电性和离子半径不同，所以在氮化物或氮氧化物发光材料的晶格中加入Cu离子能有针对性地影响发光材料的特性。于是，能够通过加入铜并且通过由此改变的晶体场分裂来影响出射光谱带的位置和/或形状。此外，不仅能够改变效率、光吸收特性，也还能够改变颗粒形态。作为实施例，在这里可以列举通过在晶格中加入铜来实现CaAlSiN3中的激活剂铕（Europium）的出射光的短波推移。
优选地，Cu适于被加入CaAlSiN-氮化物，特别是加入Ca(1-x)CuxAlSiN3:Eu2+，其中，代替Ca的Cu的份额优选地在0.2至5Mol.-%的范围内。其中，钙可以部分地、被Sr和Ba取代，特别是份额直至30Mol.-%。
在使用Sr情况下，份额可以达90Mol.-%。
优选地，利用UV中的短波射线和短波蓝光激发这种发光材料，短波特别是指在360至440nm的范围内的波。
附图说明
接下来要借助多个实施例更详尽地阐述本发明。这些附图示出：
图1是光转换式LED；
图2是具有远离放置的发光材料混合物的LED模块；
图3是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的出射光的比较图；
图4是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的亮度的比较图；
图5是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的主波长变化的比较图。
图6是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的相对亮度的变化的比较图。
图7是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的主波长变化的比较图。
图8是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的出射光的比较图。
图9示出了基于这种新型发光材料的暖白光LED与公知的暖白光LED相比较的出射光谱。
具体实施方式
图1示出了一种用于白光的光转换式LED的构造，其以公知的RGB为基础。这种光源是具有InGaN类型的出射蓝光的芯片1的半导体构件，该蓝光具有435至455nm的出射光峰值波长，例如445nm，该芯片在不透光的基壳8中被嵌入凹陷部9的区域中。芯片1通过接合线14与第一接线端3相连，并且直接与第二电接线端2相连。凹陷部9被填充了铸料5，其作为主要组成部分含有硅（重量百分比60-90）和发光材料色素6（重量百分比大约为15至40）。第一种发光材料是出射绿光的石榴石发光材料Lu3(Al,Ga)5O12：Ce(LuAGaG)，以及作为第二种发光材料的是出射红光的硅基氮化铝（Alumonitridosilikat）Ca0.99Cu0.01AlSiN3：Eu（0.5%）。凹陷部具有壁17，其用作芯片1或者说色素6的初级和次级射线的反射体。
原则上说，可以直接在LED上或者如公知的那样在一个单独的、连接在LED之前的载体上使用发光材料混合物作为色散体、薄膜等等。图2示出一个这种模块20，其具有在基板21上的各种LED24。在其上方，壳体装配有侧壁22和盖板12。这种发光材料混合物在这里作为涂层25不仅涂覆在侧壁上，首先也涂覆在透明的盖板23上。
其他合适的光源有荧光灯或高压放电灯，其中，这种新型发光材料能够被用来转换初级射线，可以单独使用或者与其他的发光材料组合在一起使用。
基本结构类型'CaAlSiN3:Eu'的一种改性的发光材料例如是Ca(1-x)CuxAlSiN3:Eu2+(0.5%)。
图3示出了在Cu浓度系列中具有变化的x的Ca(1-x)CuxAlSiN3:Eu2+(0.5%)类型的发光材料的出射光谱。其中，x在不超过0.012mol的范围内。
其中示出，取代度低的出射光几乎保持不变，随着Cu浓度升高，出射光短波地推移。
图4示出了通过在Cu浓度系列中具有变化的x的CalsinCa(1-x)CuxAlSiN3：Eu2+(0.5%)中加入Cu离子来提高亮度。
在取代度低的情况下，亮度下降。令人吃惊地，在Cu浓度较高时，亮度再次提升。
图5示出了通过在Ca(1-x)CuxAlSiN3:Eu2+(0.5%)中加入铜改变主波长。
在取代度低的情况下，主波长保持恒定。随着Cu浓度提升，主波长在短波的方向上推移。
图6示出了在使用氟化铜（CuF2）作为前体的情况下通过在Ca(1-x)CuxAlSiN3:Eu2+(0.5%)中加入铜来提高亮度。
随着取代度上升，亮度增加。最大值的范围非常宽，并且在大约4至10Mol.-%时达到最大值，即0.04至0.1mol。
图7示出了在使用氟化铜（CuF2）作为前体的情况下通过在Ca(1-x)CuxAlSiN3:Eu2+(0.5%)中加入铜来改变主波长。
在取代度低的情况下，主波长保持恒定，并且在Cu浓度提升的情况下线性短波地进行推移，也就是类似于使用Cu氧化物的情况。
图8示出在使用氟化铜（CuF2）作为前体的情况下发光材料Ca(1-x)CuxAlSiN3：Eu2+(0.5%)的出射光谱。
在取代度低的情况下，出射光几乎保持不变，随着Cu浓度提升，出射光最大值短波地进行推移。
作为铜源能够使用铜的卤化物、氮化物和氧化物，也能够使用单质铜（elementaresKupfer）。其中，优选地使用卤化物，例如CuF2、CuC12，因为这些化合物是反应性的，具备不携带氧的优点，而氧能够不利地影响发光材料的特性。
正如在氮化铜中一样，铜离子在氮（氧）化物的主晶格中优选地获得氧化数+1。为了实现用一价的铜离子电荷中性地代替二价的碱土离子，有利的是用三价的金属离子（如Ce,La,Pr,Y，Nd,Gd,Ho,Sm,Er,Lu,Dy,Tb,Tm,Yb）取代相同数量的碱土离子。此外，例如在CaAlSiN-和alpha-SiAlON-系统中，存在通过调节铝/硅比例使电荷中性化的可能性。这种平衡同样可以通过在晶格中替换氮和氧得以实现。
为了生成Cu取代式的发光材料，优选地要使用退火箱其例如能使气体组成部分由于反应物挥发的损耗最小化。
这样就将在合成温度下不稳定的铜化合物保持在反应区内。这样一来，合成物也完全和炉中的气流无关。这种坩埚例如可以由一根管（由钼和钨制成）和两个单侧封闭的圆柱体（由氧化铝制成）构成，这些圆柱体从两侧紧密连接地插在管上。在发光材料Ca(1-x)CuxAlSiN3:Eu2+(0.5%)的一个具体的实施例中，首先量入10.219g的氮化钙、10.309g的氮化硅、9.036g的氮化铝、0.242g的氟化铜(II)和0.194g的氧化铕，并使之均质化。在手套式操作箱中，这些混合物以松散的形式被填充到由钼片形成的管中，并且两个端部分别用一个由氧化铝制成的单侧封闭的圆柱体密封地封闭。样品在管式炉中实现炽烧，该管式炉具有直径为3至6cm的由氧化铝制成的工作管。该管在整体退火期间每分钟被0.5至3L的氮气冲刷。以大约200至500K/min的速度实现加热至平稳温度1550至1680℃，保持时间为多个小时，并且冷却速度类似于加热速度。冷却的发光材料在研磨器中被研磨，并且通过54ym的筛纱网被筛取。筛取物被再次填充到密封的坩埚中，按照相同的温度条件再次炽烧，并且紧接着被研磨和筛取。
图9示出基于两种发光材料的暖白光LED的光谱。第一种发光材料是Lu3(Al,Ga)5O12:Ce，第二种是根据本发明的发光材料，其具有化学计算方式(Ca1-xCux)AlSiN3-2/3xF2x:Eu(0.5%)，其中x=0.012。
这种化学计算方式不一定强制地符合化合物在炽烧时得出的化学计算法。
从文献中公知化合物LiSi2N3，能够显示出存在一种化合物Li1-2xyCayEuxSi2-yAlyN3，并且发出黄光，参见J.SolidStateChem.卷182-2(2009),301-311页。然而这种发光物的带宽非常宽，并且因此在大部分的应用情况下不能使用。
然而，至今还未成功地模拟合成理论上可以考虑的化合物CuSi2N3。然而令人惊讶的是，利用一种新方式（特别是通过CuF2合成）能够成功提供高效的并且带宽较窄的CuxCa1-xAl1-xSi1+xN3：Eu2+类发光材料化合物（以及还有其他的氮化物和氮氧化物）。迄今尚未公知这种具有单价Cu的化合物，其电荷例如通过改变铝/硅比例得以平衡。在x较小时，不一定要调节Al/Si比例，因为过量的Ca和Al-估计是以Ca和AlF3的形式-挥发了。
表格1示出一种LED的显色性，这种LED具有由Lu-Ga-Al-Granat混合而成的发光材料混合物，并且具有根据本发明的红色发光材料，将其与具有类属(Sr,Ba)2Si5N8：Eu的红色发光材料的混合物作比较。不仅只考虑8种测试色的Ra值，还有Ra14值都明显地高于90。在饱和红色的情况下，与现有技术的区别特别显著。
表1
本发明的主要特征被编号列举出：
1.一种氮化物或氮氧化物发光材料种类中的发光材料，具有至少一种阳离子M和激活剂D，其中，所述阳离子的份额x被Cu代替，并且D是Eu、Ce、Sm、Yb和Tb系列中的至少一种元素。
2.根据权利要求1所述的发光材料，其特征在于，所述发光材料是硅基氮化物、硅基氮氧化物、改性的CaAlSiN或者alpha-Sialon。
3.根据权利要求1所述的发光材料，其特征在于，所述发光材料含有Eu作为激活剂。
4.根据权利要求1所述的发光材料，其特征在于，Cu在M中的份额在0.05至5Mol.-%的范围内。
5.根据权利要求1所述的发光材料，其特征在于，所述激活剂D的份额在0.2至15Mol.-%的范围内。
6.根据权利要求1所述的发光材料，其特征在于，所述发光材料是Cal-xCuxAlSiN3:Eu类型的Calsin。
7.根据权利要求1所述的发光材料，其特征在于，Cu在M中的份额在0.2至5Mol.-%的范围内。
8.具有一种根据以上权利要求中任一项所述发光材料的光源。
9.根据权利要求1所述的光源，其特征在于，所述光源是光转换式LED、荧光灯或高压放电灯。
10.光转换式LED，具有出射初级射线的芯片，具有出射初级射线的芯片以及包含发光材料的设置在所述芯片之前的涂层，所述涂层将至少部分芯片的初级射线转换成次级射线，其中，使用了至少一个根据权利要求1至7中任一项所述的第一种发光材料。
11.根据权利要求10所述的光转换式LED，其特征在于，(Lu,Y，Gd)3(Al,Ga)5O12：Ce被用作用于产生白光的另一种发光材料。
12.根据权利要求10所述的光转换式LED，其特征在于，所述第一种发光材料是用Cu改性的CaAlSiN3:Eu。
Claims (7)
1.一种氮化物发光材料种类中的发光材料，具有至少一种阳离子M和激活剂D，其中，所述阳离子的份额x被Cu代替，其中所述发光材料是Ca1-xCuxAlSiN3:Eu类型的Calsin，并且Cu在M中的份额x在0.05至5Mol.％的范围内。
2.根据权利要求1所述的发光材料，其特征在于，所述激活剂D的份额在0.2至15Mol.％的范围内。
3.根据权利要求1所述的发光材料，其特征在于，Cu在M中的份额在0.2至5Mol.％的范围内。
4.具有一种根据以上权利要求中任一项所述发光材料的光源。
5.根据权利要求4所述的光源，其特征在于，所述光源是光转换式LED、荧光灯或高压放电灯。
6.光转换式LED，具有出射初级射线的芯片以及包含发光材料的设置在所述芯片之前的涂层，所述涂层将至少部分芯片的初级射线转换成次级射线，其中，使用了至少一个根据权利要求1至3中任一项所述的发光材料。
7.根据权利要求6所述的光转换式LED，其特征在于，(Lu,Y,Gd)3(Al,Ga)5O12：Ce被用作用于产生白光的另一种发光材料。
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| EP1104799A1 (en) | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
| DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
| JP4214768B2 (ja) | 2002-11-29 | 2009-01-28 | 日亜化学工業株式会社 | 窒化物蛍光体及びそれを用いた発光装置 |
| EP1433831B1 (en) | 2002-03-22 | 2018-06-06 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
| EP1413618A1 (en) | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Luminescent material, especially for LED application |
| JP3837588B2 (ja) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
| EP1837386B1 (en) | 2004-12-28 | 2016-11-23 | Nichia Corporation | Nitride phosphor, method for producing same and light-emitting device using nitride phosphor |
| WO2006095285A1 (en) * | 2005-03-09 | 2006-09-14 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a fluorescent material |
| DE102007035592B4 (de) * | 2007-07-30 | 2023-05-04 | Osram Gmbh | Temperaturstabiler Leuchtstoff, Verwendung eines Leuchtstoffs und Verfahren zur Herstellung eines Leuchtstoffs |
| TW200925250A (en) * | 2007-12-12 | 2009-06-16 | wei-hong Luo | Warm white light emitting semiconductor and yellow-orange silicate phosphor powder thereof |
| DE102009037730A1 (de) | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-LED mit hoher Farbwiedergabe |
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- 2010-11-24 WO PCT/EP2010/068102 patent/WO2011085849A2/de active Application Filing
- 2010-11-24 JP JP2012545190A patent/JP5606552B2/ja not_active Expired - Fee Related
- 2010-11-24 KR KR1020127019295A patent/KR101756275B1/ko active IP Right Grant
- 2010-11-24 CN CN201080058911.XA patent/CN102959045B/zh not_active Expired - Fee Related
- 2010-12-17 TW TW099144448A patent/TW201141993A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0155047A1 (en) * | 1984-03-01 | 1985-09-18 | Koninklijke Philips Electronics N.V. | Luminescent screen |
| CN1706910A (zh) * | 2004-06-10 | 2005-12-14 | 汉城半导体股份有限公司 | 发光物质 |
| WO2008015207A1 (de) * | 2006-08-04 | 2008-02-07 | Osram Gesellschaft mit beschränkter Haftung | Leuchtstoff aus der klasse der nitridosilikate und lichtquelle mit derartigem leuchtstoff |
| CN101501161A (zh) * | 2006-08-04 | 2009-08-05 | 奥斯兰姆有限公司 | 氮化硅酸盐类荧光材料和具有这类荧光材料的光源 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2491095B1 (de) | 2015-01-07 |
| DE102009055185A1 (de) | 2011-06-30 |
| WO2011085849A3 (de) | 2011-09-15 |
| US20130113364A1 (en) | 2013-05-09 |
| KR20120106861A (ko) | 2012-09-26 |
| WO2011085849A2 (de) | 2011-07-21 |
| JP5606552B2 (ja) | 2014-10-15 |
| KR101756275B1 (ko) | 2017-07-26 |
| US9263221B2 (en) | 2016-02-16 |
| CN102959045A (zh) | 2013-03-06 |
| EP2491095A2 (de) | 2012-08-29 |
| JP2013515110A (ja) | 2013-05-02 |
| TW201141993A (en) | 2011-12-01 |
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