CN102956627A - Led封装结构 - Google Patents

Led封装结构 Download PDF

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CN102956627A
CN102956627A CN2011102524968A CN201110252496A CN102956627A CN 102956627 A CN102956627 A CN 102956627A CN 2011102524968 A CN2011102524968 A CN 2011102524968A CN 201110252496 A CN201110252496 A CN 201110252496A CN 102956627 A CN102956627 A CN 102956627A
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electrode
encapsulating structure
led
bearing area
barricade
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CN102956627B (zh
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张超雄
林厚德
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW100132868A priority patent/TWI450422B/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

本发明提供一种LED封装结构,其包括一个基板、至少二个LED芯片以及一个封装层。所述基板包含至少两个电极以及一个挡墙,所述挡墙将所述基板分为至少两个承载区域,所述承载区域内分别设置所述电极和所述LED芯片,所述LED芯片与所述电极达成电性连接,并由所述封装层覆盖。本发明的所述挡墙可增加侧向光强度以及出光角度,提升封装结构使用时的良好发光效能。

Description

LED封装结构
技术领域
本发明涉及一种LED封装结构,尤其涉及一种具有较佳出光效果的LED封装结构。
背景技术
LED产业是近几年最受瞩目的产业之一,发展至今,LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点,然而LED高功率产品为获得所需要的亮度与颜色,在LED封装结构中具有一个反射层设置。所述反射层在LED封装结构的周围设置,通常会限制出光的角度而使正向光的发光强度增强。当这样的LED封装结构以数组排列的构造使用在大尺寸直下式背光模块时,就会因相邻LED封装结构之间,因为出光的角度受限制产生侧向光较弱以及正向光的发光强度太强等因素,在显示面板上产生暗带或是光点的问题。目前LED封装结构采用在出光面上设置光学透镜的方式,使侧面出光强度增加并扩大出光角度,以解决显示面板上光点或是暗带的问题。但是,所述光学透镜的设置不但会造成制作成本的增加,同时也会使显示面板厚度增加不利于产品的薄型化。
发明内容
有鉴于此,有必要提供一种可增加侧向光强度以及出光角度的LED封装结构。
一种LED封装结构,其包括一个基板、至少二个LED芯片以及一个封装层。所述基板包含至少两个电极以及一个挡墙, 所述挡墙将所述基板分为至少两个承载区域, 所述承载区域内设置所述电极和所述LED芯片, 所述LED芯片与所述电极达成电性连接, 并由所述封装层覆盖。
上述LED封装结构,由于所述挡墙将所述基板分为两个承载区域,所述承载区域的外侧不再有反射层阻挡可增加出光角度,所述承载区域内分别设置所述LED芯片,使所述LED芯片数量可以增加从而可提升侧向光强度,具有宽光场的出光效果,因此可以解决目前显示面板的光点或是暗带问题。相较于现有的LED封装结构由于不需要光学透镜的设置,能减少制作成本而且利于显示面板的薄型化设计。
附图说明
图1是本发明LED封装结构的第一实施方式的剖视图。
图2是图1的LED封装结构的俯视图。
图3是图1的LED封装结构的使用示意图。
图4是本发明LED封装结构的第二实施方式的剖视图。
图5是图4的LED封装结构的俯视图。
主要元件符号说明
LED封装结构 10、20
基板 12、22
承载电极 122、124、222、224
对应电极 126、226、228
挡墙 120、220
第一承载区域 1202、2202
第二承载区域 1204、2204
LED芯片 14、24
导电线 142、242
封装层 16、26
显示面板 P
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1,所示为本发明LED封装结构的第一实施方式的剖视图。所述LED封装结构10,包括一个基板12、至少二个LED芯片14以及一个封装层16,其中,所述基板12包含至少两个电极122、124以及一个挡墙120。本实施方式,所述挡墙120在所述基板12的顶面中央设置,将所述基板12分为一第一承载区域1202以及一第二承载区域1204,使所述第一、二承载区域1202、1204位于所述基板12的两侧。所述挡墙120的高度大于所述LED芯片14的厚度并具有反射光线的作用,其材料可以是塑料或是高分子材料,例如,PPA(Polyphthalamide) 塑料或是环氧树脂(Epoxy) 材料。所述第一、二承载区域1202、1204内分别设置一个所述电极122、124和一个所述LED芯片14。所述电极122、124是为承载电极,分别位于第一、二承载区域1202、1204内的所述基板12顶面上,所述LED芯片14则分别位于所述承载电极122、124上,并分别与所述承载电极122、124达成电性连接。实施方式中,所述LED芯片14与所述承载电极122、124的电性连接为串联电路,即,所述承载电极122、124具有相同的极性,例如均为正电极,而在所述挡墙120底面的所述基板12顶面上,横跨所述第一、二承载区域1202、1204具有共享的一个对应电极126设置,所述对应电极126为相对应的负电极,所述LED芯片14通过导电线142分别与正电极的所述承载电极122、124以及负电极的所述对应电极126连接,就达成串联电路的电性连接(如图2所示)。所述LED芯片14与所述电极122、124、126达成电性连接后,由所述封装层16覆盖。所述封装层16覆盖所述第一、二承载区域1202、1204内的所述LED芯片14,使所述LED芯片14产生的光量可以通过所述封装层16对外发射。所述封装层16可以包含有荧光粉(图中未标示),用以对应所述LED芯片14激发产生所需要的颜色光。所述第一、二承载区域1202、1204位于所述LED封装结构10的两侧,从而所述LED封装结构10的侧向(正负90度至45度之间)出光强度大于正向(正负45度之间)出光强度,同时也可以增加所述LED封装结构10的出光角度。请再参阅图3,所述LED封装结构10使用于大尺寸直下式背光模块时,由数组的所述LED封装结构10排列构成,因为所述LED封装结构10的侧向(正负90度至45度之间)出光强度大, LED封装结构10彼此相邻所述第一、二承载区域1202、1204侧向光的配合,能将习用LED封装结构相邻之间因反射层设置在显示面板P上形成暗带的问题完全解决。另外,习用LED封装结构的反射层使正向光强度增加而造成在显示面板P上产生光点的问题,也可以由所述挡墙120在所述基板12顶面的中央位置设置,从而分散正向光强度来获得改善。上述LED封装结构10不需要增加光学透镜解决显示面板P上暗带或光点的问题,所以可以降低产品的制作成本,同时也可省下所述光学透镜设置的空间,而有利于显示面板P的薄型化设计。
请参阅图4,所示为本发明LED封装结构的第二实施方式的剖视图。所述LED封装结构20,包括一个基板22、至少二个LED芯片24以及一个封装层26,其中,所述基板22包含至少两个电极222、224以及一个挡墙220。所述挡墙220在所述基板22的顶面中央设置,将所述基板22分为一第一承载区域2202以及一第二承载区域2204。所述挡墙220的高度大于所述LED芯片24的厚度并具有反射光线的作用。所述第一、二承载区域2202、2204内分别设置一个所述承载电极222、224和一个所述LED芯片24。所述承载电极222、224分别位于第一、二承载区域2202、2204内的所述基板22顶面上, 所述LED芯片24则分别位于所述承载电极222、224上,并分别与所述承载电极222、224达成电性连接。以上所述LED封装结构20相同于所述第一实施方式的所述LED封装结构10,不同在于,所述LED芯片24与所述承载电极222、224的电性连接。本实施方式中,所述LED芯片24与所述承载电极222、224的电性连接为并联电路,在所述第一承载区域2202内,除了所述LED芯片24与所述承载电极222设置外,另具有一个对应电极226设置。同样地, 所述第二承载区域2204内,除了所述LED芯片24与所述承载电极224设置外,也另外具有一个对应电极228设置。也就是说,所述第一、二承载区域2202、2204内分别具有一组相对应的电极(222与226或224与228)以及一个所述LED芯片24设置(如图5所示)。所述一组相对应的电极包括所述承载电极222、224以及所述对应电极226、228,所述LED芯片24分别设于其中所述承载电极222、224上,再通过所述导电线242连接所述承载电极222、224以及所述对应电极226、228达成电性连接。其中, 设置所述LED芯片24的所述承载电极222、224具有与所述对应电极226、228不同的极性。例如,所述承载电极222、224为正电极,则所述对应电极226、228为负电极。所述一组相对应的电极(222与226或224与228) 以所述导电线242连接所述LED芯片24后,就达成所述LED芯片24的并联电路电性连接。所述第一、二承载区域2202、2204内的所述LED芯片24各自达成并联电路的电性连接,区隔所述第一、二承载区域2202、2204的所述挡墙220可直接设置于所述基板22的顶面上,或是与所述基板22一体成型。
综上,本发明LED封装结构的所述挡墙在所述基板的顶面上区隔出至少二个承载区域,每个所述承载区域均设置有所述LED芯片以及电性连接的所述电极,使每个所述承载区域均形成一个发光单元,同时位在于所述LED封装结构的侧边上,因此可以增加所述LED封装结构的侧向光强度以及出光角度,形成具有宽光场出光的所述LED封装结构,从而有利于直下式背光模块的使用,有效解决显示面板上暗带或是光点产生的问题。
另外,本领域技术人员还可在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种LED封装结构,其包括一个基板、至少二个LED芯片以及一个封装层, 其特征在于:所述基板包含至少两个电极以及一个挡墙, 所述挡墙将所述基板分为至少两个承载区域, 所述承载区域内设置所述电极和所述LED芯片, 所述LED芯片与所述电极达成电性连接, 并由所述封装层覆盖。
2.如权利要求1所述的LED封装结构,其特征在于:所述挡墙在所述基板的顶面中央设置,将所述基板分为一第一承载区域以及一第二承载区域,所述第一、二承载区域位于所述基板的两侧。
3.如权利要求1所述的LED封装结构,其特征在于:所述挡墙的高度大于所述LED芯片的厚度并具有反射光线的作用。
4.如权利要求1所述的LED封装结构,其特征在于:所述挡墙,其材料是塑料或是高分子材料,例如,PPA(Polyphthalamide) 塑料或是环氧树脂材料。
5.如权利要求1所述的LED封装结构,其特征在于:所述承载区域内的所述电极为承载电极, 所述LED芯片设置于所述承载电极上,其电性连接为串联电路。
6.如权利要求5所述的LED封装结构,其特征在于:所述串联电路,是在所述承载区域内具有共享的一个对应电极设置,所述LED芯片通过导电线分别与所述承载电极以及共享的所述对应电极连接。
7.如权利要求6所述的LED封装结构,其特征在于:共享的所述对应电极,是位于挡墙底面的所述基板顶面上,横跨所述第一、二承载区域,并具有与所述承载电极不同的极性。
8.如权利要求1所述的LED封装结构,其特征在于:所述承载区域内的所述电极为承载电极, 所述LED芯片设置于所述承载电极上,其电性连接为并联电路。
9.如权利要求8所述的LED封装结构,其特征在于:所述并联电路,是所述承载区域内分别具有一组相对应的电极以及所述LED芯片,所述一组相对应的电极,包括所述承载电极以及与其相对应的所述对应电极, 所述承载电极与所述对应电极具有不同的极性。
10.如权利要求1所述的LED封装结构,其特征在于:所述所述封装层包含有荧光粉。
CN201110252496.8A 2011-08-30 2011-08-30 Led封装结构 Active CN102956627B (zh)

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Application Number Priority Date Filing Date Title
CN201110252496.8A CN102956627B (zh) 2011-08-30 2011-08-30 Led封装结构
TW100132868A TWI450422B (zh) 2011-08-30 2011-09-13 Led封裝結構
US13/366,374 US8536592B2 (en) 2011-08-30 2012-02-06 LED package device

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CN201110252496.8A CN102956627B (zh) 2011-08-30 2011-08-30 Led封装结构

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TW201310719A (zh) 2013-03-01

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