TW201310719A - Led封裝結構 - Google Patents
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- 239000004033 plastic Substances 0.000 claims description 3
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- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
本發明提供一種LED封裝結構,其包括一基板、至少二LED晶片以及一封裝層。該基板包含至少兩電極以及一擋牆,該擋牆將該基板分為至少兩承載區域,該承載區域內分別設置該電極和該LED晶片,該LED晶片與該電極達成電性連接,並由該封裝層覆蓋。本發明的該擋牆可增加側向光強度以及出光角度,提升封裝結構使用時的良好發光效能。
Description
本發明涉及一種LED封裝結構,尤其涉及一種具有較佳出光效果的LED封裝結構。
LED產業是近幾年最受矚目的產業之一,發展至今,LED產品已具有節能、省電、高效率、反應時間快、壽命週期時間長、且不含汞、具有環保效益等優點。然而LED高功率產品為獲得所需要的亮度與顏色,在LED封裝結構中具有一反射層設置。該反射層在LED封裝結構的周圍設置,通常會限制出光的角度而使正向光的發光強度增強。當這樣的LED封裝結構以陣列排列的構造使用在大尺寸直下式背光模組時,就會因相鄰LED封裝結構之間,因為出光的角度受限制產生側向光較弱以及正向光的發光強度太強等因素,在顯示面板上產生暗帶或是光點的問題。目前LED封裝結構採用在出光面上設置光學透鏡的方式,使側面出光強度增加並擴大出光角度,以解決顯示面板上光點或是暗帶的問題。但是,該光學透鏡的設置不但會造成製作成本的增加,同時也會使顯示面板厚度增加不利於產品的薄型化。
有鑒於此,有必要提供一種可增加側向光強度以及出光角度的LED封裝結構。
一種LED封裝結構,其包括一基板、至少二LED晶片以及一封裝層。該基板包含至少兩電極以及一擋牆, 該擋牆將該基板分為至少兩承載區域, 該承載區域內分別設置該電極和該LED晶片, 該LED晶片與該電極達成電性連接, 並由該封裝層覆蓋。
上述的LED封裝結構,由於該擋牆將該基板分為兩個承載區域,該承載區域的外側不再有反射層阻擋故可增加出光角度,該承載區域內分別設置該LED晶片,使該LED晶片數量可以增加從而可提升側向光強度,具有寬光場的出光效果,因此可以解決目前顯示面板的光點或是暗帶問題。相較于現有的LED封裝結構由於不需要光學透鏡的設置,能減少製作成本而且利於顯示面板的薄型化設計。
下面將結合附圖對本發明作一具體介紹。
請參閱圖1,所示為本發明LED封裝結構的第一實施例的剖視圖。該LED封裝結構10,包括一基板12、至少二LED晶片14以及一封裝層16,其中,該基板12包含至少兩電極122、124以及一擋牆120。本實施例中,該擋牆120在該基板12的頂面中央設置,將該基板12分為一第一承載區域1202以及一第二承載區域1204,使該第一、二承載區域1202、1204位於該基板12的兩側。該擋牆120的高度大於該LED晶片14的厚度並具有反射光線的作用,其材料可以是塑膠或是高分子材料,例如,PPA(Polyphthalamide) 塑膠或是環氧樹脂(Epoxy) 材料。該第一、二承載區域1202、1204內分別設置該電極122、124和該LED晶片14。該電極122、124是為承載電極,分別位於該第一、二承載區域1202、1204內的該基板12頂面上,該LED晶片14則分別位於該承載電極122、124上,並分別與該承載電極122、124達成電性連接。實施例中,該LED晶片14與該承載電極122、124的電性連接為串聯電路。即,該承載電極122、124具有相同的極性,例如均為正電極,而在該擋牆120底面的該基板12頂面上,橫跨該第一、二承載區域1202、1204具有共用的一對應電極126設置,該對應電極126為相對應的負電極,該LED晶片14通過導電線142分別與正電極的該承載電極122、124以及負電極的該對應電極126連接,就達成串聯電路的電性連接(如圖2所示)。該LED晶片14與該電極122、124、126達成電性連接後,由該封裝層16覆蓋。該封裝層16覆蓋該第一、二承載區域1202、1204內的該LED晶片14,使該LED晶片14產生的光量可以通過該封裝層16對外發射。該封裝層16可以包含有螢光粉(圖中未標示),用以對應該LED晶片14激發產生所需要的顏色光。該第一、二承載區域1202、1204位於該LED封裝結構10的兩側,從而該LED封裝結構10的側向(正負90度至45度之間)出光強度大於正向(正負45度之間)出光強度,同時也可以增加該LED封裝結構10的出光角度。請參閱圖3,該LED封裝結構10使用於大尺寸直下式背光模組時,由陣列的該LED封裝結構10排列構成,因為該LED封裝結構10的側向(正負90度至45度之間)出光強度大, LED封裝結構10彼此相鄰的該第一、二承載區域1202、1204側向光的配合,能將習用LED封裝結構相鄰之間因反射層設置在顯示面板P上形成暗帶的問題完全解決。另外,習用LED封裝結構的反射層使正向光強度增加而造成在顯示面板P上產生光點的問題,也可以由該擋牆120在該基板12頂面的中央位置設置,從而分散正向光強度來獲得改善。上述LED封裝結構10不需要增加光學透鏡解決顯示面板P上暗帶或光點的問題,可以降低產品的製作成本,同時也可省下該光學透鏡設置的空間,而有利於顯示面板P的薄型化設計。
請再參閱圖4,所示為本發明LED封裝結構的第二實施例的剖視圖。該LED封裝結構20,包括一基板22、至少二LED晶片24以及一封裝層26,其中,該基板22包含至少兩電極222、224以及一擋牆220。該擋牆220在該基板22的頂面中央設置,將該基板22分為一第一承載區域2202以及一第二承載區域2204。該擋牆220的高度大於該LED晶片24的厚度並具有反射光線的作用。該第一、二承載區域2202、2204內分別設置該承載電極222、224和該LED晶片24。該承載電極222、224分別位於該第一、二承載區域2202、2204內的該基板22頂面上,該LED晶片24則分別位於該承載電極222、224上,並分別與所述承載電極222、224達成電性連接。以上該LED封裝結構20相同於該第一實施例的所述LED封裝結構10,不同在於,該LED晶片24與該承載電極222、224的電性連接。本第二實施例中,該LED晶片24與該承載電極222、224的電性連接為並聯電路,在該第一承載區域2202內,除了該LED晶片24與該承載電極222設置外,另具有一對應電極226設置。同樣地,該第二承載區域2204內,除了該LED晶片24與該承載電極224設置外,也另外具有一對應電極228設置。也就是說,該第一、二承載區域2202、2204內分別具有一組相對應的電極(222與226或224與228)以及一LED晶片24設置(如圖5所示)。該一組相對應的電極包括該承載電極222、224以及該對應電極226、228,該LED晶片24分別設於其中該承載電極222、224上,再通過該導電線242連接該承載電極222、224以及該對應電極226、228達成電性連接。其中,設置該LED晶片24的該承載電極222、224具有與該對應電極226、228不同的極性。例如,該承載電極222、224為正電極,則該對應電極226、228為負電極。該一組相對應的電極(222與226或224與228) 以該導電線242連接該LED晶片24後,就達成該LED晶片24的並聯電路電性連接。該第一、二承載區域2202、2204內的該LED晶片24各自達成並聯電路的電性連接,區隔該第一、二承載區域2202、2204的該擋牆220可直接設置於該基板22的頂面上,或是與該基板22一體成型。
綜上,本發明LED封裝結構的該擋牆在該基板的頂面上區隔出至少二承載區域,每個承載區域均設置有該LED晶片以及電性連接的該電極,使每個承載區域均形成一發光單元,同時位在於該LED封裝結構的側邊上,因此可以增加該LED封裝結構的側向光強度以及出光角度,形成具有寬光場出光的該LED封裝結構,從而有利於直下式背光模組的使用,有效解決顯示面板上暗帶或是光點產生的問題。
應該指出,上述實施例僅為本發明的較佳實施方式,本領域技術人員還可在本發明精神內做其他變化。這些依據本發明精神所做的變化,都應包含在本發明所要求保護的範圍之內。
10、20...LED封裝結構
12、22...基板
122、124、222、224...承載電極
126、226、228...對應電極
120、220...擋牆
1202、2202...第一承載區域
1204、2204...第二承載區域
14、24...LED晶片
142、242...導電線
16、26...封裝層
P...顯示面板
圖1是本發明LED封裝結構第一實施例的剖視圖。
圖2是圖1第一實施例LED封裝結構的俯視圖。
圖3是圖1第一實施例LED封裝結構的使用示意圖。
圖4是本發明LED封裝結構第二實施例的剖視圖。
圖5是圖4第二實施例LED封裝結構的俯視圖
10...LED封裝結構
12...基板
122、124...承載電極
126...對應電極
120...擋牆
1202...第一承載區域
1204...第二承載區域
14...LED晶片
142...導電線
16...封裝層
Claims (10)
- 一種LED封裝結構,其包括一基板、至少二LED晶片以及一封裝層,該基板包含至少兩電極以及一擋牆,該擋牆將該基板分為至少兩承載區域,該承載區域內設置該電極和該LED晶片,該LED晶片與該電極達成電性連接,並由該封裝層覆蓋。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該擋牆在該基板的頂面中央設置,將該基板分為一第一承載區域以及一第二承載區域,該第一、二承載區域位於該基板的兩側。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該擋牆的高度大於該LED晶片的厚度並具有反射光線的作用。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該擋牆,其材料是塑膠或是高分子的材料,例如,PPA(Polyphthalamide) 塑膠或是環氧樹脂材料。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該承載區域內的該電極為承載電極,該LED晶片設置於該承載電極上,其電性連接為串聯電路。
- 如申請專利範圍第5項所述的LED封裝結構,其中,該串聯電路,是在該承載區域內具有共用的一對應電極設置,該LED晶片通過導電線分別與該承載電極以及共用的該對應電極連接。
- 如申請專利範圍第6項所述的LED封裝結構,其中,該共用的該對應電極,是位於該擋牆底面的該基板頂面上,橫跨該第一、二承載區域,並具有與該承載電極不同的極性。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該承載區域內的該電極為承載電極,該LED晶片設置於該承載電極上,其電性連接為並聯電路。
- 如申請專利範圍第8項所述的LED封裝結構,其中,該並聯電路,是該承載區域內分別具有一組相對應的電極以及該LED晶片,該組相對應的電極,包括該承載電極以及與其相對應的該對應電極, 該承載電極與該對應電極具有不同的極性。
- 如申請專利範圍第1項所述的LED封裝結構,其中,該封裝層,包含有螢光粉。
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US10468565B2 (en) * | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
US9312193B2 (en) | 2012-11-09 | 2016-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress relief structures in package assemblies |
TWI467528B (zh) * | 2013-10-30 | 2015-01-01 | Au Optronics Corp | 發光二極體顯示面板及其製作方法 |
US9559273B2 (en) * | 2013-12-02 | 2017-01-31 | Achrolux Inc. | Light-emitting package structure and method of fabricating the same |
US10431568B2 (en) | 2014-12-18 | 2019-10-01 | Cree, Inc. | Light emitting diodes, components and related methods |
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US8536592B2 (en) | 2013-09-17 |
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