CN102947478A - 有明确电场的电弧蒸发源 - Google Patents

有明确电场的电弧蒸发源 Download PDF

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CN102947478A
CN102947478A CN2011800308055A CN201180030805A CN102947478A CN 102947478 A CN102947478 A CN 102947478A CN 2011800308055 A CN2011800308055 A CN 2011800308055A CN 201180030805 A CN201180030805 A CN 201180030805A CN 102947478 A CN102947478 A CN 102947478A
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S.克拉斯尼策尔
J.哈格曼
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Oerlikon Surface Solutions AG Pfaeffikon
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Abstract

本发明涉及一种电弧蒸发装置，其具有阴极、阳极、电压源，所述电压源把所述阳极相对于所述阴极置于正电位。所述装置还包含磁性介体，所述磁性介体导致在所述阴极表面上的磁场，其中把所述阳极布置在所述阴极附近使得：从所述阴极的表面发出的磁力线到达所述阳极上。

Description

有明确电场的电弧蒸发源
技术领域
本发明涉及一种如权利要求1前序部分所述的电弧蒸发源。在本说明书中电弧蒸发源指得是一种用之可以在真空中产生一种其焦点位于阴极上的弧光的装置，其中由所述阴极（=靶物）提供要蒸发的材料并且所述焦点引起所述靶物材料的蒸发。
背景技术
电弧蒸发源是现有技术领域公知的。Snaper在US 3625848中公开了一种“射束枪”（beam gun），这种“射束枪”带有一个阴极和一个阳极，它们被布置成在其间可以进行火花放电。在此所述阴极用要离析的材料构成。该文中说明的阳极具有一种圆锥形渐变、并且直接邻近于圆柱形的阴极布置的几何状态。在图1中示出根据该现有技术的布置。在该布置中没有采用磁性介体（magnetische Mittel）。因此，所述焦点在所述靶物上的移动按照现在的情况来说是非常慢的，尽管当时描述说是快的。所述焦点的慢速移动还导致借助于所述电弧蒸发源制造的层有较高的粗糙度。
与之相对Clark Bergman的专利文献中公开了一种多电弧真空系统，在该文中采用了磁性介体。在此涉及一种带有阳极线路布置的电弧源，其中采用腔室或者一种电绝缘地插入的阳极。然而在此得出的缺点在于：由所述靶物发出的磁场只有一部分通向阳极。此设备的优点是特别在小的放电电流时有一个稳定的火花引导。所述腔室与插入的阳极之间的电流分布通过用一个正电压附加地加载插入的阳极达到。
于是需要一种允许在恒定的较高蒸发速度的情况下制造有很小的表面粗糙度的层的电弧蒸发源。本发明的技术问题是提出这样一种电弧蒸发源。
发明内容
根据本发明该技术问题通过根据权利要求1所述的电弧蒸发源达到。在从属权利要求是根据本发明的电弧蒸发源的不同的且有利的实施方式。
根据本发明的电弧蒸发源包含一个阴极（靶物）、一个阳极和磁性介体，所述磁性介体允许磁力线以较短的连接从所述靶物表面通向所述阳极。
把所述阳极布置在所述阴极直接邻近区域，从而确保所述阴极经磁力线从所述靶物的要蒸发的表面的每个点与所述阳极连接，所述靶物的腐蚀受到阻止。
在此如此地实施所述磁性介体使得：平行于所述靶物表面的分量明显地大于垂直于所述靶物表面的分量。可以使用达500高斯的磁场场强，也就是说使用明显地高于其它在所述PVD技术中采用的磁场强度的场强。
与所述现有技术相较，本发明的电弧源在拥有非常光滑的层的同时拥有较高的覆层速率。
根据本发明的电弧源本身可以在真空中工作，其中达到一种高火花速度。在此所述电弧源以金属模式工作。如此产生的金属离子，例如Cr+、Ti+可以无障碍地抵达所述基片并且用于进行金属离子蚀刻。可以在很小的放电电流的情况下使用。
借助于所谓的“预偏置”利用根据本发明的阳极可靠地调节所述离子能量。
下面参照附图详细地举例说明本发明。
附图说明
图1示出根据现有技术的一个电弧蒸发源；
图2示出根据现有技术的一个电弧蒸发源；
图3示出根据本发明的一个电弧蒸发源的第一实施方式；
图4示出带有一个根据本发明的电弧蒸发源的真空装置；
图5示出带有一个根据现有技术的电弧蒸发源的真空装置；
图6示出根据图5的装置中的电位状态；
图7示出图4所示的根据本发明的装置中的电位状态；
图8示出根据本发明的真空装置的另一个实施方式；
图9示出图4所示的根据本发明的装置中的电位状态；
图10示出根据本发明的真空装置的另一个实施方式；
图11示出图4所示的根据本发明的装置中的电位状态。
具体实施方式
为了更好理解本发明，下面首先粗略介绍根据现有技术的电弧源的情况。图2示出一个现有技术的电弧蒸发源201，带有一个与源阴极209间隔开的阳极203。所述源阴极通过一个冷却装置211冷却并且与一个DC电流源的负极213连接。在所述源阴极后面设置磁性介体215，所述磁性介体215负责在所述靶物表面上方建立一个磁场。一个焦点205放出一个高的电流并且从而向所述蒸发室中放出许多电子。提供电弧等离子体作为导电媒介。由于根据现有技术所述阳极203没有直接处于焦点205近旁，带电粒子不得不在其前往远距离的阳极的途中与所述磁场交叉。相关联的是电荷为q、质量为m速度为v的带电粒子在一个电场E（r）和磁场B（r）中的位置r处的运动。在此作用不同的分力：对于平行于B场的运动作用一个与qE成正比的力。对于垂直于所述磁场的运动作用一个与q（E⊥+v⊥×B）成正比的力，这导致一种旋转运动，然而该旋转运动叠加在一个E×B漂移上。这导致一种“虚拟的”流路径207，这如图2中所示。在其在一个通往远处的阳极203的想象的螺旋状的轨道上跑过时，处于所述覆层室中的工作气体（例如Ar、N2）受到强电离。为了构成所述气体离子，出现放电的电压提高和在所述阴极前的电位跳变。此外还观察到覆层速度的下降。
在图3中示出根据本发明的电弧蒸发源301的一个实施方式。它只是一个示例性方案并且可以通过不同的实施方式实现。所述阴极309由所述要蒸发的材料构成并且通过所述电流端子连接在一个电流源的负极上。通过磁性介体305在所述阴极表面上产生一个磁场，该磁场允许一种快速的火花移动。
从所述靶物表面上发出的磁力线如此地布置在一个大的面积组成部分上使得：其能够具有平行于所述阴极309的表面的优势分量，并且能够对环状地围绕所述阴极边缘延伸的阳极303有一个短的连接。在图3中所示的电弧蒸发源既可以实现为轴对称的圆形阴极也可以实现为矩形阴极。在中心内或者说沿着中心线的阴极区域具有总是垂直于所述靶物表面延伸的场线，并且应当因此使得腐蚀得以排除。这例如可以借助于一个挡板或者一个被填充的空隙进行（两者都没有示出）。在区域6中的磁场强度为40高斯至500高斯。对于特别光滑的层结果，有利的是60高斯至100高斯，尤其有利的是200高斯至500高斯。根据本发明的阳极布置结合所述磁场分布允许在这样的高的磁场条件下工作。对于硬质材料覆层的阴极309的靶物材料可以使用通常的材料譬如Ti、TiAl、Al、AlCr、TiSi、Cr等等。
在图3所示的电弧蒸发布置301中，结合磁性介体305产生的磁场的所述阳极303根据本发明如此地布置在阴极309附近使得：所述磁力线允许所述流路径307在从焦点315至阳极303的直接路径上。如果所述电场基本上平行于所述磁场延伸，就能够基本上避免一个上述的漂移。在本发明的一个有利的实施方式中如此地实施所述阳极使得：其在施加电压和接通磁场的情况下得以满足，并且直至所述中心的磁力线近乎所有的或者至少大部分的磁力线都通到所述阳极。所述电子轨道以拉莫（Larmor）半径进行表征并且绕磁力线延伸画出一个旋转。对于10高斯该电子旋转半径约为1mm，对于100高斯该电子旋转半径约为0.1mm。因此在磁场强度的情况下所述轨道是良好地沿着所述场线定位的。这样一种布置的作用是降低整个放电电压并且提高覆层速度。在所述靶物附近的工作气体只是被很少地电离。
本发明的一个可能的有利应用是金属离子蚀刻（MIE）。
这通过独创的电弧蒸发源的另一个特点得以实现。该特点在于在气压小于1E-03Pa的真空中稳定工作而本身无工作气体的可能性。通过电弧点5对所述阳极的良好电气连接使得所述金属等离子体8的电导率足以承载9从所述阴极至所述阳极的电流。 从所述电弧源发出的金属蒸汽可以达一个高的程度简单且多次的被电离并且可以通过偏置电压12向基片11上加速。以此可以有效地实现一种金属离子蚀刻（MIE）。一个对应的MIE装置401在图4中示出：所述MIE装置包含一个电弧蒸发源403和一个基片支架407，它们布置在一个真空室405中。布设有要蚀刻的基片（图中未示出）的所述基片支架借助于一个电压源408置于负电位，由此向所述基片加速在所述电弧蒸发源上出现的正离子。
值得注意的是，所述在真空中的工作可以保持在非常低的电流强度下：对于上述的MIE工艺的参数选择令人惊喜地实现即使在非常小的电弧放电电流的情况下也可以有一种稳定的工艺。由于所述磁力线，所述阳极的电位可以被“拖曳”直达靶物表面前很短的距离，由此可以保持所述流路径。
对于铝，可以在向下稍高于10A处的电流强度确定一个稳定的工艺，而对于钛，可以在向下稍高于40A处的电流强度确定一个稳定的工艺。利用根据本发明的ARC蒸发源还可以采用其它材料例如Cr、Nb、Ta和有高的电离度和高的多重电离部分的金属稳定地进行金属离子蚀刻。
根据本发明的电弧蒸发源可以用不同的线路布置实现，这本身又是独创性的。
还是为了更好地理解，首先概述使用根据现有技术的电弧蒸发源的情况。与之对应地在图5中示出一个按照现有技术的线路布置。
在此容器505的室壁构成所述阳极。从所述靶物发出的磁力线与阳极没有直接连接。在图5中示出一个带有一个布置在容器505中的电弧蒸发源503的覆层装置501，其中在所述容器505中还布置一个基片支架507，该基片支架507可以借助一个电压源508置于负电压。特别在对层粗糙度起正面作用的高磁场强度的情况下，发生所述工作气体（例如N2）的强电离并且从而导致放电电压的提高或者导致靶物前的一个电位降。此外由于放电的高电子温度（2eV-5eV）在所述基片前出现所述电位的一种畸变，如在图6中概略地示出的那样。
与之相对，在图4中概略地示出一个根据本发明的实施方式并且将继续说明。
以高的电离度蒸发的阴极材料经一个偏置电压408向所述基片加速。电系统阴极1-阳极4对腔室地（Kammermasse）10悬浮地实施。
在该实施方式中等离子体电位 Uplasma连接在室壁上。
所述电弧源的放电电流从所述阴极流向阳极。在该例中，针对阳极4建立约 -16至 -25V的阴极电压。来自发生器408的基片偏置针对所述基片加速具有等离子体电位Uplasma的等离子体中的离子。如在图7中所示所述基片前的电位分布不再畸变，因为这样一种等离子体的电子温度仅为约0.3eV至1eV。
另一个实施方式地示于图8中，即带有电弧蒸发源803的覆层装置801，所述电弧蒸发源803布置在容器805中，其中在所述容器805中还布置一个基片支架807，所述基片支架可以借助一个电压源808置于负电压。根据该实施方式，有别于图4，图4中悬浮的阴极-阳极系统的连接于腔室地（大地）。在此，如图9中所示，电位被推移。阴极电位被推移到腔室地。电弧放电电流从阴极走向阳极。由所述电压源（偏置源）808布设的电压（在该例中为40V）产生所述有附加部分Ubias+ Uplasma的离子加速。
在图8中所述阴极与所述腔室短接并且从而置于腔室地。然而还可以将所述阴极和所述腔室经一个电压源连接并且由此实现附加的电位推移。从而可以实现所述等离子电位至少在所述阳极前是强正性的。这在图10和图11中示出。

Claims (7)

1.一种电弧蒸发装置，具有：
-阴极，该阴极包括具有应当蒸发的材料的表面；
-磁性介体，所述磁性介体导致在所述表面上的磁场；
-阳极，用于吸收在所述蒸发工艺中从所述阴极拉出的电子；
-电压源，该电压源允许至少分时地把所述阳极相对于所述阴极置于正电位；
其特征在于，
将所述阳极布置在所述阴极附近使得：从所述阴极的表面发出的磁力线如果不从所述表面走到所述阴极的中心区域那么就到达所述阳极上。
2.如权利要求1所述的电弧蒸发装置，
其特征在于，
所述阳极的位置和几何状态与所述阴极相比被如此地选择使得：磁力线以大于45°的角度并且优选地基本上垂直地到达所述阳极的表面上。
3.如权利要求2所述的电弧蒸发装置，
其特征在于，
所述阳极的位置和几何状态与所述阴极相比被如此地选择使得：到达所述阳极上的所述磁力线和电力线基本上彼此平行地伸展。
4.如以上权利要求中任一项所述的电弧蒸发装置，
其特征在于，
在所述中心区域采取防护措施，所述防护措施在所述蒸发装置工作时基本上防止其受到腐蚀。
5.如权利要求4所述的电弧蒸发装置，
其特征在于，
所述防护措施包括所述阴极表面中心区域中的挡板。
6.一种真空处理装置，拥有容器和基片支架，并且拥有如以上权利要求中任一项所述的电弧蒸发装置。
7.如权利要求6所述的真空处理腔室，
其特征在于，
所述电弧蒸发装置的阴极相对于所述容器保持在悬浮、相同或者正性的电位。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112352063A (zh) * 2018-04-20 2021-02-09 普兰西复合材料有限公司 真空电弧源

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2726648B1 (en) 2011-06-30 2019-09-11 Oerlikon Surface Solutions AG, Pfäffikon Nano-layer coating for high performance tools
US9447488B2 (en) 2011-09-30 2016-09-20 Oerlikon Surface Solutions Ag, Pfaffikon Aluminum titanium nitride coating with adapted morphology for enhanced wear resistance in machining operations and method thereof
EP2607517A1 (en) * 2011-12-22 2013-06-26 Oerlikon Trading AG, Trübbach Low temperature arc ion plating coating
US9131893B2 (en) * 2012-10-26 2015-09-15 Pixie Scientific, Llc Health diagnostic systems and methods
JP6842233B2 (ja) * 2014-07-29 2021-03-17 サンドビック インテレクチュアル プロパティー アクティエボラーグ コーティングされた切削工具、及びコーティングされた切削工具の製造方法
US10383564B2 (en) 2015-05-22 2019-08-20 Pixie Scientific, Llc Indicator panels for incontinence products
EP3394312B1 (en) * 2015-12-22 2020-06-17 Sandvik Intellectual Property AB A coated cutting tool and method
WO2019136261A1 (en) * 2018-01-04 2019-07-11 Ih Ip Holdings Limited Gas phase co-deposition of hydrogen/deuterium loaded metallic structures
MX2022000138A (es) 2019-07-03 2022-02-17 Oerlikon Surface Solutions Ag Pfaeffikon Fuente de arco catodico.
KR102667048B1 (ko) * 2021-07-20 2024-05-22 한국생산기술연구원 중앙부 함몰형 자기장을 가지는 아크 증발원 및 이를 포함하는 아크 이온 플레이팅 장치, 그리고 이를 이용한 금속 및 금속화합물의 증착방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4551221A (en) * 1980-06-25 1985-11-05 Axenov Ivan I Vacuum-arc plasma apparatus
US5306407A (en) * 1989-06-27 1994-04-26 Hauzer Holding Bv Method and apparatus for coating substrates
US5380421A (en) * 1992-11-04 1995-01-10 Gorokhovsky; Vladimir I. Vacuum-arc plasma source
EP1970464A1 (en) * 2005-12-16 2008-09-17 Fundacion Tekniker Cathode evaporation machine

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620913A (en) 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
JP2002525431A (ja) * 1998-09-14 2002-08-13 ユナキス・トレーディング・アクチェンゲゼルシャフト アーク蒸化室用ターゲット配置
JP3917348B2 (ja) * 1999-05-26 2007-05-23 株式会社神戸製鋼所 アーク蒸発源、真空蒸着装置及び真空蒸着方法
JP4409015B2 (ja) * 1999-11-30 2010-02-03 株式会社神戸製鋼所 アークイオンプレーティング装置
CA2305938C (en) * 2000-04-10 2007-07-03 Vladimir I. Gorokhovsky Filtered cathodic arc deposition method and apparatus
DE10018143C5 (de) * 2000-04-12 2012-09-06 Oerlikon Trading Ag, Trübbach DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems
JP4000764B2 (ja) * 2000-09-18 2007-10-31 日新電機株式会社 真空アーク蒸発装置
JP4034563B2 (ja) * 2001-12-27 2008-01-16 株式会社神戸製鋼所 真空アーク蒸発源
JP4109503B2 (ja) * 2002-07-22 2008-07-02 日新電機株式会社 真空アーク蒸着装置
NZ576185A (en) * 2006-10-10 2012-10-26 Oerlikon Trading Ag A PVD layer system for coating workpieces with a mixed crystal layer of a polyoxide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625848A (en) * 1968-12-26 1971-12-07 Alvin A Snaper Arc deposition process and apparatus
US4551221A (en) * 1980-06-25 1985-11-05 Axenov Ivan I Vacuum-arc plasma apparatus
US5306407A (en) * 1989-06-27 1994-04-26 Hauzer Holding Bv Method and apparatus for coating substrates
US5380421A (en) * 1992-11-04 1995-01-10 Gorokhovsky; Vladimir I. Vacuum-arc plasma source
EP1970464A1 (en) * 2005-12-16 2008-09-17 Fundacion Tekniker Cathode evaporation machine

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张允诚，等: "《电镀手册》", 31 January 2007 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112352063A (zh) * 2018-04-20 2021-02-09 普兰西复合材料有限公司 真空电弧源
US11610760B2 (en) 2018-04-20 2023-03-21 Plansee Composite Materials Gmbh Vacuum arc source
CN112352063B (zh) * 2018-04-20 2023-05-05 普兰西复合材料有限公司 真空电弧源

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