CN102934211A - Heat-curable die-bonding film - Google Patents

Heat-curable die-bonding film Download PDF

Info

Publication number
CN102934211A
CN102934211A CN2011800265581A CN201180026558A CN102934211A CN 102934211 A CN102934211 A CN 102934211A CN 2011800265581 A CN2011800265581 A CN 2011800265581A CN 201180026558 A CN201180026558 A CN 201180026558A CN 102934211 A CN102934211 A CN 102934211A
Authority
CN
China
Prior art keywords
bonding film
die bonding
semiconductor chip
film
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011800265581A
Other languages
Chinese (zh)
Other versions
CN102934211B (en
Inventor
井上刚一
菅生悠树
三隅贞仁
松村健
高本尚英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN102934211A publication Critical patent/CN102934211A/en
Application granted granted Critical
Publication of CN102934211B publication Critical patent/CN102934211B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20105—Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)

Abstract

Disclosed are: a heat-curable die-bonding film which enables the prevention of the local application of a stress to a semiconductor chip through a filler during the die bonding of the semiconductor chip onto a material of interest through the heat-curable die-bonding film, thereby reducing the fracture of the semiconductor chip; and a dicing/die-bonding film comprising the heat-curable die-bonding film. The heat-curable die-bonding film contains a filler that comprises an adhesive agent composition and microparticles, wherein the X/Y(-) ratio is 1 or less wherein Y ([mu]m) represents the thickness of the heat-curable die-bonding film and X ([mu]m) represents the largest particle diameter of the filler.

Description

Thermosetting die bonding film
Technical field
The present invention relates to the thermosetting die bonding film that uses when being fixed on the adherends such as substrate or lead frame will be such as semiconductor chip gluing.In addition, the present invention relates to the dicing/die bonding film that this thermosetting die bonding film and cutting pellicular cascade form.In addition, the present invention relates to use described dicing/die bonding film to make the method for semiconductor device.
Background technology
In the past, in the manufacture process of semiconductor device, fixedly adopted the silver slurry during semiconductor chip at lead frame or electrode member.Described fixedly processing is carried semiconductor chip thereon and is made the pulpous state adhesive layer solidify to carry out by the coating pulpous state adhesive such as chip bonding pad at lead frame.
But the slurry adhesive is because its viscosity behavior or deteriorated etc. and produce large deviation at aspects such as coating weight or coating shapes.As a result, the pulpous state adhesive of formation is in uneven thickness, so the constant intensity of semiconductor chip lacks reliability.That is, when the coating weight deficiency of pulpous state adhesive, the constant intensity between semiconductor chip and the electrode member reduces, thereby semiconductor chip is peeled off in follow-up wire bond operation.On the other hand, when the coating weight of pulpous state adhesive is too much, the pulpous state adhesive can curtain coating to semiconductor chip and produce bad characteristic, thereby rate of finished products and reliability decrease.Problem in the fixedly processing like this follows the maximization of semiconductor chip to become remarkable especially.Therefore, need to carry out continually the control of the coating weight of pulpous state adhesive, thereby bring problem for workability or productivity ratio.
In the painting process of this pulpous state adhesive, have the pulpous state adhesive is applied to respectively method on the chip of lead frame and formation.But in the method, the pulpous state adhesive layer is difficult to homogenizing, and the coating of pulpous state adhesive needs special device and long-time.Therefore, proposed dicing/die bonding film, it is gluing maintenance semiconductor wafer in cutting action, and also provides the required chip of installation procedure fixedly to stick with glue agent layer (for example, referring to Patent Document 1).
In this dicing/die bonding film, on support base material, be provided with adhesive layer (die bonding film) in strippable mode, after under the maintenance of this adhesive layer semiconductor wafer being cut, the stretching support base material is peeled off semiconductor chip with adhesive layer, it is reclaimed respectively, and be fixed on the adherends such as lead frame by this adhesive layer.
In addition, in following patent documentation 2, disclose from giving thermal conductivity, regulate melt viscosity, giving that thixotropic viewpoint is considered and the dicing/die bonding film that adhesive layer, is added with inorganic filler etc.
But there is following problem in the dicing/die bonding film of record in the described patent documentation 2.That is, follow the high capacity of the semiconductor device take memory as representative, the semiconductor chip of thin layer is carried out stacked semiconductor packages with the multistage shape become main flow.In addition, also there is restriction in the thickness of semiconductor packages self, is therefore also just going the thin layer of die bonding film.Based on such background, the mechanical strength of semiconductor wafer or semiconductor chip that its panelization is obtained extremely descends, and therefore becomes fragile.Therefore, by die bonding film when the semiconductor chip chip join is to the adherend, have the problem of semiconductor chip breakage.
As the reason of described semiconductor chip breakage, the cooperation that can enumerate the packing materials such as inorganic filler that contain in the die bonding film is incorrect.Namely, big or small improper and its content of packing material in die bonding film is also in inappropriate situation, so that stress concentrates on semiconductor chip partly, the result causes the breakage of semiconductor chip to the activating pressure that applies during chip join by packing material.
The prior art document
Patent documentation
Patent documentation 1: Japanese kokai publication sho 60-57642 communique
Patent documentation 2: TOHKEMY 2008-88411 communique
Summary of the invention
The present invention foundes in view of foregoing problems, its purpose be to provide a kind of by thermosetting die bonding film when the semiconductor chip chip join is to the adherend, can prevent from by packing material this semiconductor chip being applied local stress and reducing thus the thermosetting die bonding film of the breakage of semiconductor chip, and the dicing/die bonding film that possesses this thermosetting die bonding film.In addition, the invention provides the method for using described dicing/die bonding film to make semiconductor device.
The inventor etc. are in order to solve aforementioned existing problem to thermosetting die bonding film and to possess the dicing/die bonding film of this thermosetting die bonding film and the manufacture method of semiconductor device is studied.Found that, can realize aforementioned purpose by adopting following formation, and finish the present invention.
Namely, thermosetting die bonding film of the present invention, the packing material that contains adhesive compound and comprise particulate, wherein, if the thickness of described thermosetting die bonding film is Y(μ m), the maximum particle diameter of establishing described packing material is X(μ m) time, ratio X/Y(-) be below 1.
According to aforementioned formation, by the thickness Y(μ m with thermosetting die bonding film) with the maximum particle diameter X(μ m of described packing material) relation be set as X/Y≤1, when joining to semiconductor chip on the adherend by die bonding film, can reduce by packing material semiconductor chip is concentrated local stress.Thus, even the semiconductor chip slimming also can reduce its breakage and the manufacturing semiconductor device, thereby improve output.
In aforementioned formation, preferred described X(μ m) in the scope of 0.05 ~ 5 μ m.
In addition, in aforementioned formation, preferred described Y(μ m) in the scope of 1 ~ 5 μ m.
In addition, in aforementioned formation, the content of preferred described packing material with respect to described adhesive compound 100 weight portions in the scope of 1 ~ 80 weight portion.
In addition, in aforementioned formation, the content of preferred described packing material with respect to described adhesive compound 100 parts by volume in the scope of 1 ~ 40 parts by volume.
In addition, in aforementioned formation, the maximum profile height Rt of the roughness curve of preferred described thermosetting die bonding film is in the scope of 0.1 ~ 2.3 μ m.
In addition, dicing/die bonding film of the present invention in order to solve aforementioned problems, is laminated with aforesaid thermosetting die bonding film cutting film.
In addition, the manufacture method of semiconductor device of the present invention, in order to solve aforementioned problems, use aforesaid dicing/die bonding film to make semiconductor device, described method comprises following operation: take described thermosetting die bonding film as sticking veneer, paste the stickup operation of described dicing/die bonding film at the back side of semiconductor wafer; Described semiconductor wafer cut with described thermosetting die bonding film and form the cutting action of semiconductor chip; Described semiconductor chip is picked up operation with described thermosetting die bonding film from what described dicing/die bonding film picked up; With by described thermosetting die bonding film, under the condition in 100 ~ 180 ℃ of temperature, activating pressure 0.05 ~ 0.5MPa, 0.1 ~ 5 second scope of engaging time, with the chip join operation of described semiconductor chip chip join to the adherend.
In the described method, when the semiconductor chip chip join is to the adherend, use will cause owing to the packing material that cooperates the thermosetting die bonding film of the concentrated minimizing of stress on semiconductor chip in film.Therefore, although under aforesaid chip join condition, carry out the chip join of semiconductor chip, also can reduce the breakage of semiconductor chip.That is, during for described method, can reduce semiconductor chip breakage, improve output and make semiconductor device.
The invention effect
The present invention can realize following effect by aforesaid means.
That is, in the thermosetting die bonding film of the present invention, the thickness Y(μ m of thermosetting die bonding film) with the maximum particle diameter X(μ m of packing material) the pass be X/Y≤1.Thus, by thermosetting die bonding film when the semiconductor chip chip join is to the adherend, can reduce packing material contained in the film semiconductor chip is applied local stress.As a result, can reduce semiconductor chip breakage, improve output and make semiconductor device.
Description of drawings
Fig. 1 is the generalized section of the dicing/die bonding film of expression an embodiment of the invention.
Fig. 2 is the generalized section of the dicing/die bonding film of expression another embodiment of the invention.
Fig. 3 is that expression is by the generalized section of the example of the die bonding film mounting semiconductor chip in an embodiment of the invention.
Fig. 4 is that expression is by the generalized section of the example of the three-dimensional mounting semiconductor chip of described die bonding film.
Fig. 5 is that described die bonding film is used in expression, across the three-dimensional generalized section that the example of two semiconductor chips is installed of partition.
Symbol description
1 base material
2 adhesive phases
3 die bonding films (thermosetting die bonding film)
4 semiconductor wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 sealing resins
9 partitions
10,11 dicing/die bonding films
13 die bonding films (thermosetting die bonding film)
15 semiconductor chips
21 die bonding films (thermosetting die bonding film)
Embodiment
(dicing/die bonding film)
For thermosetting die bonding film of the present invention (hereinafter referred to as " die bonding film "), so that the dicing/die bonding film that obtains carries out following explanation as example with cutting film (adhesive film) stacked being integrated.Fig. 1 is the generalized section of the dicing/die bonding film of expression present embodiment.Fig. 2 is the generalized section of another dicing/die bonding film of expression present embodiment.
As shown in Figure 1, dicing/die bonding film 10 has the structure that is laminated with die bonding film 3 at the cutting film.The cutting film consists of by stacked adhesive phase 2 on base material 1, and die bonding film 3 is arranged on this adhesive phase 2.In addition, the present invention also can be illustrated in figure 2 as the formation that only forms die bonding film 3 ' in the workpiece adhesive portion.
Described base material 1 has ultraviolet (uv) transmission, and as dicing/die bonding film 10,11 intensity parent.For example can enumerate: low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefin such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) copolymer, ethylene-butene copolymer, ethene-hexene copolymer, polyurethane, PETG, the polyester such as PEN, Merlon, polyimides, polyether-ether-ketone, polyimides, Polyetherimide, polyamide, Wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, polyorganosiloxane resin, metal (paper tinsel), paper etc.
In addition, as the material of base material 1, can enumerate the polymer such as crosslinked of aforementioned resin.Described plastic film can not stretch and uses, and can carry out as required using after single shaft or the biaxial stretch-formed processing yet.The resin sheet of heat-shrinkable has been given in utilization by stretch processing etc., by make this base material 1 thermal contraction after cutting, can reduce adhesive phase 2 and die bonding film 3,3 ' gluing area, thereby can easily reclaim semiconductor chip.
In order to improve and the adhesiveness of adjoining course, retentivity etc., the surface treatment that the surface of base material 1 can implement to habitually practise, chemistry or the physical treatments such as for example, chromic acid processing, ozone exposure, fire exposure, high-voltage electric shock exposure, ionization radial line processing, utilize the coating of silane coupling agent (for example adhesion substance described later) to process.
Described base material 1 is the of the same race or different types of material of choice for use suitably, also can use the material after the different materials blend as required.In addition, in order to give base material 1 antistatic performance, can arrange at described base material 1 comprise metal, alloy, their thickness of oxide etc. is
Figure BDA00002483226700071
The evaporation layer of conductive materials.Base material 1 can be individual layer or two or more multilayers.
The thickness of base material 1 is not particularly limited, and can suitably determine, is generally approximately the 200 μ m of 5 μ m ~ approximately.
Described adhesive phase 2 comprises ultraviolet-curing adhesive and consists of.Ultraviolet-curing adhesive can increase the degree of cross linking and easily reduce its bonding force by ultraviolet irradiation, to the part 2a irradiation ultraviolet radiation corresponding with the semiconductor wafer adhesive portion of adhesive phase shown in Figure 22, bonding force poor of 2a and other parts 2b can be set by only.
In addition, solidify by the adhesive phase 2 that makes ultraviolet hardening according to die bonding film shown in Figure 23 ', can easily form the described part 2a that bonding force significantly descends.On the described part 2a that bonding force descends because die bonding film 3 ' sticks on curing, so the interface of the described part 2a of adhesive phase 2 and die bonding film 3 ' has the character of easily peeling off when picking up.On the other hand, the part of irradiation ultraviolet radiation does not have sufficient bonding force, forms described part 2b.
As previously mentioned, bonding by described part 2b and die bonding film 3 that uncured ultraviolet-curing adhesive forms in the adhesive phase 2 of dicing/die bonding film 10 shown in Figure 1, the confining force in the time of can guaranteeing to cut.Like this, ultraviolet-curing adhesive can with good gluing-peel off balanced support and be used for semiconductor chip is fixed to die bonding film 3 on the adherend such as substrate.In the adhesive phase 2 of dicing/die bonding film 11 shown in Figure 2, described part 2b can be fixing with paster ring (ウ エ Ha リ ソ グ).
Described ultraviolet-curing adhesive can use ultra-violet solidified functional groups such as having carbon-to-carbon double bond with being not particularly limited, and shows fusible ultraviolet-curing adhesive.As ultraviolet-curing adhesive, can illustration such as the addition type ultraviolet-curing adhesive that in the general contact adhesive such as acrylic adhesives, rubber adhesive, is combined with ultra-violet solidified monomer component or oligomer composition.
As described contact adhesive, the viewpoint consideration of the ultra-pure water of the electronic unit that pollutes from the taboo such as semiconductor wafer or glass or the cleaning washing performance that alcohol waits organic solvent etc., the preferably acrylic adhesives take acrylic polymer as base polymer.
As described acrylic polymer, for example can enumerate: (the straight or branched Arrcostab of the carbon number 1 ~ 30 of alkyl, particularly carbon number 4 ~ 18 for example is such as methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-Octyl Nitrite, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, hendecane ester, dodecane ester, tridecane ester, tetradecane ester, hexadecane ester, octadecane ester, eicosane ester etc. to use (methyl) alkyl acrylate; Deng) and one or more of (methyl) acrylic acid cycloalkanes ester (for example, ring pentyl ester, cyclohexyl etc.) as the acrylic polymer of monomer component etc.In addition, (methyl) acrylate represents acrylate and/or methacrylate, and (methyl) of the present invention all represents identical implication.
Described acrylic polymer in order to improve cohesiveness, thermal endurance etc., can contain and can be with other monomer component of described (methyl) alkyl acrylate or the copolymerization of cycloalkanes ester corresponding unit as required.As such monomer component, for example can enumerate: contain carboxylic monomer, such as acrylic acid, methacrylic acid, (methyl) acrylic acid carboxyl ethyl ester, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid etc.; Anhydride monomers is such as maleic anhydride, itaconic anhydride etc.; The hydroxyl monomer is such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxyl butyl ester, (methyl) acrylic acid-own ester of 6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxyl lauryl, (methyl) acrylic acid (4-methylol cyclohexyl) methyl esters etc.; Contain the sulfonic group monomer, such as styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, (methyl) acryloyl-oxy naphthalene sulfonic acids etc.; Phosphorous acidic group monomer is such as acryloyl phosphoric acid-2-hydroxy methacrylate etc.; Acrylamide, acrylonitrile etc.These copolymerisable monomer compositions can use one or more.The use amount of these copolymerisable monomers is preferably below 40 % by weight of whole monomer components.
In addition, described acrylic polymer is in order to carry out the crosslinked polyfunctional monomer etc. that also can contain as required as the comonomer composition.As such polyfunctional monomer, can enumerate such as hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These polyfunctional monomers also can use one or more.The use amount of polyfunctional monomer is considered to be preferably below 30 % by weight of whole monomer components from viewpoints such as adhesion characteristics.
Described acrylic polymer can obtain by the polymerization of mixtures with single monomer or two or more monomers.Polymerization can be undertaken by any-modes such as polymerisation in solution, emulsion polymerisation, polymerisation in bulk, suspension polymerisations.From preventing the viewpoints such as the pollution consideration to clean adherend, the content of preferred low molecular weight substance is few.Consider from this point, the number-average molecular weight of acrylic polymer is preferably approximately more than 300,000, and more preferably from about 400,000 ~ approximately 3,000,000.
In addition, in order to improve the number-average molecular weight of acrylic polymer as base polymer etc., also can suitably adopt outside crosslinking agent in the described adhesive.The concrete means of outside cross-linking method can be enumerated: add the so-called crosslinking agent such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine class crosslinking agent and make the method for its reaction.When using outside crosslinking agent, its use amount is according to suitably determining with the balance of the crosslinked base polymer of wish and as the use of adhesive.Generally speaking, with respect to described base polymer 100 weight portions, be preferably below 5 weight portions, more preferably cooperate 0.1 ~ 5 weight portion.In addition, as required, in adhesive, except aforementioned composition, also can use the additives such as existing known various tackifier, age resister.
As the described ultra-violet solidified monomer component that is used for cooperating, can enumerate such as oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, ultraviolet curing oligomers composition can be enumerated the various oligomer such as polyurethanes, polyethers, polyesters, polycarbonate-based, polybutadiene, and its molecular weight is suitable in about 100 ~ approximately 30000 scope.The use level of ultra-violet solidified monomer component or oligomer composition can suitably determine to reduce according to the kind of described adhesive phase the amount of the bonding force of adhesive phase.Generally speaking, with respect to the base polymers such as acrylic polymer 100 weight portions that consist of adhesive, for example be about 500 weight portions of 5 weight portions ~ approximately, preferred about 150 weight portions of 40 weight portions ~ approximately.
In addition, as ultraviolet-curing adhesive, except the addition type ultraviolet-curing adhesive that illustrates previously, can also enumerate and use in polymer lateral chain or main chain or interior at the type ultraviolet-curing adhesive as base polymer of polymer that the main chain end has a carbon-carbon double bond.The oligomer that inherent type ultraviolet-curing adhesive need not to contain or do not contain in a large number as low molecular weight compositions becomes to grade, therefore oligomer become to grade can not pass in time in adhesive mobile, can form the adhesive phase of stable layer structure, therefore preferred.
Described base polymer with carbon-carbon double bond can use to have carbon-carbon double bond and have fusible polymer with being not particularly limited.As such base polymer, preferably with the polymer of acrylic polymer as basic framework.As the basic framework of acrylic polymer, can enumerate the acrylic polymer that the front illustration is crossed.
The introducing method of carbon-carbon double bond is not particularly limited in the described acrylic polymer, can adopt the whole bag of tricks, and with carbon-carbon double bond introduce polymer lateral chain in MOLECULE DESIGN than being easier to.For example can enumerate: after will having in advance the monomer and acrylic polymer copolymerization of functional group, make to have the method that in the ultra-violet solidified situation that keeps carbon-carbon double bond, to carry out condensation or addition reaction with the compound of the functional group of this functional group reactions and carbon-carbon double bond.
As the combination of these functional groups example, can enumerate such as carboxyl and epoxy radicals, carboxyl and '-aziridino, hydroxyl and NCO etc.Consider the easiness that reaction is followed the trail of, the combination of preferred hydroxyl and NCO in the combination of these functional groups.In addition, so long as generate described combination with acrylic polymer of carbon-carbon double bond by the combination of these functional groups, then functional group can be on any one party of acrylic polymer and described compound, in described preferred compositions, preferred acrylic polymer has hydroxyl, described compound has the situation of NCO.At this moment, as the isocyanate compound with carbon-carbon double bond, for example can enumerate: methacryl isocyanates, 2-methylacryoyloxyethyl isocyanates, isopropenyl-α, alpha-alpha-dimethyl dibenzoyl isocyanates etc.In addition, as acrylic polymer, can use copolymerization that the polymer of the ether compound etc. of the illustrative hydroxyl monomer in front or 2-hydroxyethyl vinyl ethers, 4-hydroxybutyl vinyl ethers, diethylene glycol mono vinyl ether is arranged.
Described inherent type ultraviolet-curing adhesive can use separately described base polymer (particularly acrylic polymer) with carbon-carbon double bond, also can cooperate described ultra-violet solidified monomer component or oligomer composition in the scope of not damaging characteristic.Ultraviolet curing oligomers composition etc. with respect to base polymer 100 weight portions usually in the scope of 30 weight portions, the scope of preferred 0 ~ 10 weight portion.
Described ultraviolet-curing adhesive can contain Photoepolymerizationinitiater initiater by curing such as ultraviolet rays the time.As Photoepolymerizationinitiater initiater, for example can enumerate: α-ketols compound, such as the 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone etc.; Acetophenone compounds, such as methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-2-morpholinyl propane-1-ketone etc.; The benzoin ether compounds is such as benzoin ethyl ether, benzoin iso-propylether, anisoin methyl ether etc.; Ketal compounds is such as dibenzoyl dimethyl ketal etc.; The aromatic sulfonyl compounds is such as 2-naphthalene sulfonyl chloride etc.; The photolytic activity oxime compound, such as 1-phenyl-1,2-propane diketone-2-(O-carbethoxyl group) oxime etc.; Benzophenone compound, such as benzophenone, benzoylbenzoic acid, 3,3 '-dimethyl-4-methoxy benzophenone etc.; The thioxanthones compounds is such as thioxanthones, CTX, 2-methyl thioxanthones, 2,4-dimethyl thioxanthones, isopropyl thioxanthone, 2,4-two clopenthixal ketones, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthones etc.; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.The use level of Photoepolymerizationinitiater initiater is with respect to the base polymers such as acrylic polymer 100 weight portions that consist of adhesive, for example is about 20 weight portions of 0.05 weight portion～approximately.
In addition, as ultraviolet-curing adhesive, can enumerate such as: disclosed in the Japanese kokai publication sho 60-196956 communique, contain the optical polymerism compounds such as the addition polymerization compound with 2 above unsaturated bonds, the alkoxy silane with epoxy radicals and carbonyls, organosulfur compound, peroxide, amine,
Figure BDA00002483226700121
The rubber adhesive of the Photoepolymerizationinitiater initiaters such as salt compounds or acrylic adhesives etc.
Bonding force after the ultraviolet curing of described adhesive phase 2, be 0.001 ~ 1N/10mm width with respect to die bonding film 3,3 ', preferred 0.005 ~ 0.5N/10mm width, more preferably 0.01 ~ 0.1N/10mm width (180 degree peeling forces, peeling rate 300mm/mm).In the time of in described number range, in the time will picking up with the semiconductor chip of the adhesive of die bonding film, this semiconductor chip can be fixed to more than necessity, can realize better pick.
As the method that in described adhesive phase 2, forms described part 2a, can enumerate: after base material 1 forms ultraviolet-curing adhesive layer 2, to described part 2a partly irradiation ultraviolet radiation make the method for its curing.Local ultraviolet ray irradiation can be undertaken by the photomask that is formed with the pattern corresponding with part 3b etc. beyond the semiconductor wafer adhesive portion 3a.In addition, can enumerate method that the point-like irradiation ultraviolet radiation is cured etc.The formation of ultraviolet-curing adhesive layer 2 can be transferred on the base material 1 and carries out by being arranged on ultraviolet-curing adhesive layer on the partition.Local ultraviolet ray irradiation also can be carried out the ultraviolet-curing adhesive layer 2 that is arranged on the partition.
In the adhesive phase 2 of dicing/die bonding film 10, can carry out ultraviolet ray irradiation to the part of adhesive phase 2, make the bonding force of the bonding force of described part 2a＜other parts 2b.Namely, can use the whole or local base material that carries out shading to the part beyond the part at least single face, corresponding with semiconductor wafer adhesive portion 3a of base material 1, after forming ultraviolet-curing adhesive layer 2, this base material carries out the ultraviolet ray irradiation, make corresponding with semiconductor wafer adhesive portion 3a partly solidified, thereby form the described part 2a that bonding force descends.As light screening material, can make the material that can become photomask in support film by printing or evaporation etc.Thus, can effectively make dicing/die bonding film 10 of the present invention.
The thickness of adhesive phase 2 is not particularly limited, and from preventing the damaged of chip cutting face and keep the fixing viewpoints such as the property taken into account of adhesive layer to consider, is preferably approximately the 50 μ m of 1 μ m ~ approximately.Preferred 2 μ m ~ 30 μ m, more preferably 5 μ m ~ 25 μ m.
Described die bonding film 3, as long as contain adhesive compound and contain fine-grained packing material, and to establish its thickness be Y(μ m), the maximum particle diameter of establishing described packing material is X(μ m) time, ratio X/Y(-) be below 1, then to be not particularly limited.
As described packing material, can enumerate inorganic filler and organic filler.From improving operability and thermal conductivity, adjusting melt viscosity and giving the viewpoint such as thixotropy and consider preferred inorganic filler.
As described inorganic filler, be not particularly limited, can enumerate such as silicon dioxide, aluminium hydroxide, calcium hydroxide, magnesium hydroxide, antimonous oxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesium oxide, aluminium oxide, aluminium nitride, aluminium borate, boron nitride, crystalline silica, amorphous silica etc.These inorganic fillers may be used singly or two or more in combination.Consider preferential oxidation aluminium, aluminium nitride, boron nitride, crystalline silica, amorphous silica etc. from the viewpoint that improves thermal conductivity.In addition, from considering preferred silicon dioxide with the viewpoint of the balance of the adhesivity of die bonding film 3.In addition, as described organic filler, can enumerate polyimides, polyamidoimide, polyether-ether-ketone, Polyetherimide, polyesterimide, nylon, polysiloxanes etc.These organic fillers may be used singly or two or more in combination.
The maximum particle diameter X(μ m of described packing material) is preferably 0.05 ~ 5 μ m, more preferably 0.05 ~ 3 μ m.Be set as more than the 0.05 μ m by the maximum particle diameter with packing material, can improve the wetability to adherend, can suppress the decline of adhesivity.On the other hand, by described maximum particle diameter is set as below the 5 μ m, can prevent that packing material is outstanding from the surface of die bonding film 3, can reduce that when chip join semiconductor chip is applied excessive stress partly.In addition, among the present invention, the mutual different packing material of average grain diameter can be used in combination.In addition, the maximum particle diameter of packing material is for (HORIBA makes, device name: the value of LA-910) obtaining by for example luminosity formula particle size distribution meter.
The shape of described packing material is not particularly limited, and for example, can use spherical, axiolitic packing material.
The content of described packing material with respect to described adhesive compound 100 weight portions preferably in the scope of 1 ~ 80 weight portion, more preferably in the scope of 1 ~ 50 weight portion.By described content is set as more than 1 weight portion, can improve the wetability to adherend, can suppress the decline of adhesivity.On the other hand, by described content is set as below 80 weight portions, can prevent that packing material is outstanding from the surface of die bonding film 3, can reduce that when chip join semiconductor chip is applied excessive stress partly.
In addition, described packing material with respect to described adhesive compound 100 parts by volume preferably in the scope of 1 ~ 40 parts by volume, more preferably in the scope of 1 ~ 30 parts by volume.By described content is set as more than 1 parts by volume, can improve the wetability to adherend, can suppress the decline of adhesivity.On the other hand, by described content is set as below 80 parts by volume, can prevent that packing material is outstanding from the surface of die bonding film 3, can reduce that when chip join semiconductor chip is applied excessive stress partly.
In addition, the thickness Y(μ m of die bonding film 3) (is gross thickness in the situation of duplexer) and is not particularly limited, for example preferably in the scope of 1 ~ 5 μ m, more preferably in the scope of 2 ~ 4 μ m.By with described thickness Y(μ m) be set as more than the 1 μ m, can improve the wetability to adherend, can suppress the decline of adhesivity.On the other hand, by with described thickness Y(μ m) be set as below the 5 μ m, can prevent that packing material is outstanding from the surface of die bonding film 3, can reduce that when chip join semiconductor chip is applied excessive stress partly.
The maximum profile height Rt of the roughness curve of die bonding film 3 is preferably in the scope of 0.1 ~ 2.3 μ m, more preferably in the scope of 1 ~ 1.5 μ m.By described maximum profile height Rt is set as more than the 0.1 μ m, can easily pick up.On the other hand, exceedingly apply local stress by described maximum profile height Rt being set as below the 2.3 μ m, can reducing.In addition, the maximum profile height Rt of described roughness curve is according to JIS B0601, and (Japanese PVC one コ company makes, and WYKO), carries out the value of measuring after the gradient correction on surface to use contactless surface roughness measurement device.
Be not particularly limited as described adhesive compound, for example, preferably contain the adhesive compound of epoxy resin, phenolic resins and acrylic copolymer.
Described epoxy resin, so long as the epoxy resin that usually uses as adhesive compound then is not particularly limited, can example such as bifunctional epoxy resin or polyfunctional epoxy resin or the epoxy resin such as hydantoins type, triglycidyl isocyanurate type or glycidic amine type such as bisphenol A-type, Bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol phenolic varnish type, orthoresol phenolic varnish type, three (hydroxyphenyl) methane type, four (hydroxyphenyl) ethane types.These epoxy resin may be used singly or two or more in combination.In these epoxy resin, particularly preferably has in the present invention the epoxy resin of the aromatic rings such as phenyl ring, cyclohexyl biphenyl and naphthalene nucleus.Particularly, can enumerate such as phenolic resin varnish type epoxy resin, the phenolic resin varnish type epoxy resin that contains the phenylenedimethylidyne skeleton, the phenolic resin varnish type epoxy resin that contains biphenyl backbone, bisphenol A type epoxy resin, bisphenol f type epoxy resin, tetramethyl bisphenol-type epoxy resin, triphenyl methane type epoxy resin, naphthalene type epoxy resin etc.These epoxy resin, reactive good with as the phenolic resins of curing agent, and thermal endurance etc. is good.In addition, the content of the ionic impurity etc. of corrosion semiconductor element is few in the epoxy resin.
The weight average molecular weight of described epoxy resin is preferably in 300 ~ 1500 scope, more preferably in 350 ~ 1000 scope.Weight average molecular weight is lower than at 300 o'clock, and the mechanical strength of the die bonding film after the hot curing 3, thermal endurance, moisture-proof descend sometimes.On the other hand, surpass at 1500 o'clock, become fragile thereby the die bonding film after the sometimes hot curing becomes firm.In addition, the weight average molecular weight among the present invention refers to the polystyrene conversion value of utilizing gel permeation chromatography (GPC) Application standard polystyrene calibration curve to obtain.
In addition, described phenolic resins works as the curing agent of described epoxy resin, can enumerate such as polycarboxylated styrenes such as the phenolic varnish type phenolic resins such as phenol novolac resin, phenol biphenyl resin, phenol aralkyl resin, cresols novolac resin, tert-butyl phenol novolac resin, nonyl phenol novolac resin, resol type phenolic resins, poly(4-hydroxystyrene) etc.These phenolic resins may be used singly or two or more in combination.Preferred phenol novolac resin, phenol aralkyl resin in these phenolic resins.This is because can improve the connection reliability of semiconductor device.
The weight average molecular weight of described phenolic resins is preferably in 300 ~ 1500 scope, more preferably in 350 ~ 1000 scope.Weight average molecular weight is lower than at 300 o'clock, and the hot curing of described epoxy resin is insufficient, sometimes can not obtain sufficient toughness.On the other hand, weight average molecular weight surpasses at 1500 o'clock, becomes high viscosity, and the workability when die bonding film is made sometimes descends.
The mixing ratio of described epoxy resin and phenolic resins, for example with respect to epoxy radicals 1 equivalent in the described epoxy resin composition, the hydroxyl in the phenolic resins is that the mode of 0.5 ~ 2.0 equivalent cooperates is suitable.More suitable is 0.8 ~ 1.2 equivalent.That is, this be because: if both mixing ratios beyond described scope, then curing reaction can not fully carry out, the easy variation of the characteristic of epoxy resin cured product.
In addition, the combined amount of described epoxy resin and phenolic resins with respect to acrylic copolymer 100 weight portions preferably in the scope of 10 ~ 200 weight portions.
As described acrylic copolymer, be not particularly limited, preferably contain in the present invention the carboxy acrylic analog copolymer, contain the epoxy radicals acrylic copolymer.Describedly contain the monomer who uses in the carboxy acrylic analog copolymer, can enumerate acrylic or methacrylic acid.The content of acrylic or methacrylic acid so that the mode of acid number in 1 ~ 4 scope regulate.All the other can use methyl acrylate, methyl methacrylate etc. to have the mixture of alkyl acrylate, alkyl methacrylate, styrene or the acrylonitrile etc. of the alkyl of carbon number 1 ~ 8.In these materials, particularly preferably (methyl) ethyl acrylate and/or (methyl) butyl acrylate.Blending ratio is preferably considered the glass transition point (Tg) of described acrylic copolymer described later and is regulated.In addition, as polymerization, be not particularly limited, can adopt such as the existing known method such as solution polymerization process, mass polymerization, suspension polymerization, emulsion polymerization.
In addition, as can being not particularly limited with other monomer component of described monomer component copolymerization, can enumerate such as acrylonitrile etc.The use amount of these copolymerisable monomer compositions, with respect to whole monomer components preferably in the scope of 1 ~ 20 % by weight.By containing other monomer component in this number range, can improve cohesiveness, adhesivity etc.
Polymerization as acrylic copolymer is not particularly limited, and can adopt such as the existing known method such as solution polymerization process, mass polymerization, suspension polymerization, emulsion polymerization.
The glass transition point of described acrylic copolymer (Tg) is preferably-30 ~ 30 ℃, more preferably-20 ~ 15 ℃.By glass transition point being set as more than-30 ℃, can guarantee thermal endurance.On the other hand, by being set as below 30 ℃, the preventing effectiveness that the chip after the cutting of the wafer that surface state is coarse disperses improves.
The weight average molecular weight of described acrylic copolymer is preferably 100,000 ~ 1,000,000, and more preferably 350,000 ~ 900,000.By weight average molecular weight is set as more than 100,000, the adhesivity to the adherend surface during high temperature is good, and can improve thermal endurance.On the other hand, by weight average molecular weight is set as below 1,000,000, can easily be dissolved in the organic solvent.
In addition, in the die bonding film 3,3 ', can suitably cooperate other additive as required.As other additive, can enumerate such as fire retardant, silane coupler or ion trap agent etc.
As described fire retardant, can enumerate such as antimonous oxide, antimony pentoxide, brominated epoxy resin etc.These fire retardants may be used singly or two or more in combination.
As described silane coupler, for example can enumerate: β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxy propyl group methyldiethoxysilane etc.These compounds may be used singly or two or more in combination.
As described ion trap agent, can enumerate such as hydrotalcite, bismuth hydroxide etc.These ion trap agent may be used singly or two or more in combination.
Promote catalyst as the hot curing of described epoxy resin and phenolic resins, be not particularly limited, can enumerate such as the salt that comprises any one skeletons such as triphenylphosphine skeleton, amine skeleton, triphenylborane skeleton, three halogen borine skeletons.
In addition, die bonding film 3 for example can have the structure that only is made of the adhesive layer individual layer.In addition, the different thermosetting resin appropriate combination of thermoplastic resin, heat curing temperature that also can glass transition temperature is different forms two-layer above sandwich construction.In addition, owing to using cutting water in the cutting action of semiconductor wafer, therefore, sometimes die bonding film 3 moisture absorptions and reach moisture content more than the normality.If be adhesive under the state of such high-moisture percentage on substrate etc., then can be trapped at rear cure stage water vapour at the interface gluing, thereby sometimes produce warpage.Therefore, as die bonding film, by forming the structure of clamping high poisture-penetrability core by adhesive layer, can spread by film at rear cure stage water vapour, thereby can avoid described problem.Consider from this viewpoint, die bonding film 3 can adopt the sandwich construction that forms adhesive layer at the single or double of core.
As described core, can enumerate: film (such as polyimide film, polyester film, pet film, PEN film, polycarbonate film etc.), resin substrates, minute surface silicon wafer, silicon substrate or the glass substrate etc. that strengthen with glass fibre or plastics non-woven fibre.
In addition, die bonding film 3 is preferably protected by partition (not shown).Partition has the function as the protective material of protection die bonding film before supplying with actual the use.In addition, partition can also use by the support base material when die bonding film 3,3 ' being transferred on the cutting film.Partition is peeled off when pasting workpiece on the die bonding film.As partition, can use PETG (PET), polyethylene, polypropylene or utilize the removers such as fluorine-containing remover, chain alkyl esters of acrylic acid remover to carry out the plastic film of surface-coated or paper etc.
(manufacture method of semiconductor device)
Dicing/die bonding film 10 of the present invention, 12 will be by using in the following manner after the partition of die bonding film 3,3 ' upper Set arbitrarily is suitably peeled off.Below, describe as example with the situation of using dicing/die bonding film 10 with reference to the accompanying drawings.
At first, as shown in Figure 1, semiconductor wafer 4 is crimped on the semiconductor wafer adhesive portion 3a of the die bonding film 3 in the dicing/die bonding film 10, and makes its gluing maintenance and fix (installation procedure).This operation utilizes the extruding means such as crimping roller to push to carry out.
Then, carry out the cutting of semiconductor wafer 4.Thus, semiconductor wafer 4 is cut into preliminary dimension and panelization, makes semiconductor chip 5.Cutting is for example carried out from circuit face one side of semiconductor wafer 4 according to conventional method.In addition, in this operation, for example, can adopt to be cut into cutting mode dicing/die bonding film 10, that be called full cutting etc.The cutter sweep that uses in this operation is not particularly limited, and can adopt existing known cutter sweep.In addition, semiconductor wafer is gluing fixing by dicing/die bonding film 10, therefore can suppress the damaged or chip of chip and disperse, and can suppress the breakage of semiconductor wafer 4.
In order to peel off by dicing/die bonding film 10 gluing fixing semiconductor chips, carry out picking up of semiconductor chip 5.Pick-up method is not particularly limited, and can adopt existing known the whole bag of tricks.For example, can enumerate: each semiconductor chip 5 is pushed away method of the semiconductor chip 5 that utilizes pick device to pick up to push away etc. with pin from dicing/die bonding film 10 1 sides.
At this, because adhesive phase 2 is ultraviolet hardening, therefore, after to these adhesive phase 2 irradiation ultraviolet radiations, pick up.Thus, the bonding force of 2 couples of die bonding film 3a of adhesive phase descends, and semiconductor chip 5 is easily peeled off.As a result, can be in the situation that do not damage semiconductor chip and pick up.The conditions such as the exposure intensity during the ultraviolet ray irradiation, irradiation time are not particularly limited, and can suitably set as required.In addition, the light source that uses when shining as ultraviolet ray can use aforesaid light source.
The semiconductor chip 5 that picks up is fixed to (chip join) on the adherend 6 by die bonding film is gluing.The chip join temperature of this moment is preferably in 100 ~ 180 ℃ scope, more preferably in 100 ~ 160 ℃ scope.In addition, chip join pressure is preferably in the scope of 0.05 ~ 0.5MPa, more preferably in the scope of 0.05 ~ 0.2MPa.In addition, the chip join time is preferably in 0.1 ~ 5 second scope, more preferably in 0.1 ~ 3 second scope.Even carry out chip join under such condition, the present application also can reduce by packing material contained in the die bonding film so that the stress concentration of local in semiconductor chip 5, therefore can prevent the breakage of semiconductor chip 5 effectively.
As adherend 6, can enumerate the semiconductor chip of lead frame, TAB film, substrate or in addition making etc.Adherend 6 for example can be to hold yielding deformation type adherend, also can be the non-deformation type adherend (semiconductor wafer etc.) that is difficult to be out of shape.As described substrate, can use existing known substrate.In addition, described lead frame can use the die-attach area such as Cu lead frame, 42 alloy lead wire frames or comprise glass epoxide, BT(bismaleimides-triazine), organic substrate of polyimides etc.But, the invention is not restricted to this, also comprise and semiconductor element is installed and is electrically connected afterwards operable circuitry substrate with semiconductor element.
Die bonding film 3 of the present invention is heat curing-type, and therefore, can semiconductor chip 5 be adhesively fixed by being heating and curing fixes on the adherend 6, and high-temperature capability is improved.In addition, with the gluing upper object that obtains such as substrate that is fixed to of semiconductor chip 5, can supply with the reflow soldering operation by semiconductor wafer adhesive portion 3a.
In addition, described chip join also can not make bonding film 3 solidify and only it temporarily is fixed on the adherend 6.Then, also can with sealing resin semiconductor chip be sealed again in the situation that carry out wire bond without heating process, then the sealing resin is carried out rear curing.
At this moment, as die bonding film 3, use temporary transient clipping viscous force fixedly the time with respect to adherend 6 as more than the 0.2MPa, the more preferably die bonding film in 0.2 ~ 10MPa scope.The clipping viscous force of die bonding film 3 is when 0.2MPa is above at least, even carry out the wire bond operation without heating process, can not produce detrusion at the gluing surface of die bonding film 3 and semiconductor chip 5 or adherend 6 because of the ultrasonic vibration in this operation or heating yet.That is, the ultrasonic vibration when semiconductor element can be because of wire bond is movable, thus, can prevent that the success rate of wire bond from descending.
Described wire bond is the operation (with reference to figure 3) of utilizing bonding wire 7 that the end of the portion of terminal (inner lead) of adherend 6 is electrically connected with electrode pad (not shown) on the semiconductor chip.As described bonding wire 7, can example such as gold thread, aluminum steel or copper cash etc.Temperature when carrying out wire bond is carried out in 80 ~ 250 ℃, preferred 80 ~ 220 ℃ scope.In addition, carry out several seconds ~ a few minutes its heating time.Connection is under the state in being heated to described temperature range, by be used in combination ultrasonic vibration can and the applied pressure crimping that produces can carry out.
This operation can be in the situation that do not make the complete hot curing of die bonding film 3a carry out.In addition, semiconductor chip 5 can not fixed by die bonding film 3a with adherend 6 in the process of this operation.
Described sealing process is to utilize sealing resin 8 with the operation (with reference to figure 3) of semiconductor chip 5 sealings.This operation is in order to protect the semiconductor chip 5 or the bonding wire 7 that carry on adherend 6 to carry out.This operation is undertaken by the resin forming that will seal usefulness with mould.As sealing resin 8, for example can use epoxylite.Heating-up temperature when resin-sealed is generally 175 ℃, and carries out 60 ~ 90 seconds, still, the invention is not restricted to this, for example, and also can be 165 ~ 185 ℃ of lower curing a few minutes.Thus, by die bonding film 3a that semiconductor chip 5 is fixing with adherend 6 when sealing resin is solidified.That is, among the present invention, even in the situation that do not carry out rear curing process described later, also can utilize die bonding film 3a to be fixed in this operation, thus the manufacturing time that can help to reduce the worker ordinal number and shorten semiconductor device.
In the described rear curing process, the sealing resin 8 that solidifies deficiency in aforementioned sealing process is solidified fully.Even in the situation that fix by die bonding film 3a in the sealing process, in this operation, also can in the curing of sealing resin 8, be fixed by die bonding film 3a.Heating-up temperature in this operation is different because of the kind of sealing resin, and for example, in 165 ~ 185 ℃ scope, be approximately 0.5 hour ~ approximately 8 hours heating time.
In addition, dicing/die bonding film of the present invention as shown in Figure 4, also can be suitable for the stacked situation of carrying out three-dimensional installation of a plurality of semiconductor chips.Fig. 4 is that expression is by the generalized section of the example of the three-dimensional mounting semiconductor chip of die bonding film.In the situation that three-dimensional shown in Figure 4 is installed, at first, at least one the die bonding film 3a that is cut into the semiconductor chip same size temporarily is fixed on the adherend 6, then by die bonding film 3a semiconductor chip 5 is temporarily fixed take its wire bond face as the mode of upside.Then, the electrode pad part of avoiding semiconductor chip 5 is temporarily fixed die bonding film 13.In addition, the mode of another semiconductor chip 15 take its wire bond face as upside is temporarily fixed on the die bonding film 13.
Then, carry out the wire bond operation in the situation that do not carry out heating process.Thus, utilize bonding wire 7 that the electrode pad separately in semiconductor chip 5 and another semiconductor chip 15 is electrically connected with adherend 6.Then, utilize sealing resin 8 with the sealing process of sealing such as semiconductor chip 5 grades, and sealing resin is solidified.Meanwhile, utilize die bonding film 3a with fixing between adherend 6 and the semiconductor chip 5.In addition, also utilize die bonding film 13 with fixing between semiconductor chip 5 and another semiconductor chip 15.In addition, behind the sealing process, can carry out rear curing process.
Even in the situation that the three-dimensional of semiconductor chip is installed, do not carry out the heat treated of die bonding film 3a, 13 utilization heating yet, therefore can simplify manufacturing process and improve rate of finished products.In addition, warpage can not occur in adherend 6, and semiconductor chip 5 and another semiconductor chip 15 can not crack yet, and therefore can realize the further slimming of semiconductor chip 5.
In addition, as shown in Figure 5, can carry out installing by the three-dimensional of die bonding film stacked partition between semiconductor chip.At this moment, at first stack gradually die bonding film 3a, semiconductor chip 5 and die bonding film 21 and temporary transient fixing at adherend 6.Then, stack gradually partition 9, die bonding film 21, die bonding film 3a and semiconductor chip 5 and temporary transient fixing at bonding film 21.Then, do not carry out heating process and carry out as shown in Figure 5 the wire bond operation.Thus, with bonding wire 7 electrode pad on the semiconductor chip 5 is electrically connected with adherend 6.
Then, utilize sealing resin 8 with the sealing process of semiconductor chip 5 sealings, sealing resin 8 is solidified, utilize simultaneously die bonding film 3a, 21 to fix between adherend 6 and the semiconductor chip 5 and between semiconductor chip 5 and the partition 9.Thus, can obtain semiconductor packages.The preferred disposable Sealing Method that only semiconductor chip 5 one side single faces is sealed of sealing process.Sealing is in order to protect the semiconductor chip 5 that sticks on the bonding sheet to carry out, and its representative method is to use sealing resin 8 in die for molding.At this moment, the mould that normal operation is made of the mold with a plurality of die cavities and bed die carries out sealing process simultaneously.Heating-up temperature when resin-sealed is for example preferably in 170 ~ 180 ℃ scope.Behind the sealing process, can carry out rear curing process.In addition, be not particularly limited as described partition 9, for example, can use existing known silicon chip, polyimide film etc.In addition, described partition can use the cores such as polyimide film, resin substrates.
Then, at the printed wiring board upper surface described semiconductor packages is installed.Method of surface mounting for example can be enumerated: in advance after printed circuit board (PCB) is supplied with scolder, and the reflow soldering of welding by heating and meltings such as hot blasts.Heating means can be enumerated hot air reflux, infrared ray backflow etc.In addition, can be the any-mode of whole heating, localized heating.Heating-up temperature is preferably in 240 ~ 260 ℃ the scope, and heating time is preferably in 1 ~ 20 second scope.
(other item)
Three-dimensional when semiconductor element is installed on described substrate etc., be formed with buffering in a side of the formation circuit of semiconductor element and film.Film as this buffering, can enumerate such as: silicon nitride film or comprise the film of the heat stable resins such as polyimide resin.
In addition, when the three-dimensional of semiconductor element was installed, the die bonding film that uses in each section was not limited to comprise the die bonding film of same composition, can suitably change according to create conditions, purposes etc.
In addition, in aforementioned embodiments, be illustrated for the mode of after a plurality of semiconductor elements being laminated on substrate etc., carrying out once the wire bond operation, still, the invention is not restricted to this.For example, also can all carry out the wire bond operation when upper whenever semiconductor element being laminated to substrate etc.
Embodiment
Below, the preferred embodiments of the present invention are carried out exemplary detailed description, still, the material of putting down in writing among this embodiment or use level etc. just only are defined in this with scope of the present invention unintentionally as long as no the record that is particularly limited.In addition, when mentioning part, refer to weight portion.
(embodiment 1)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins are (bright and change into Co., Ltd. and make, trade name: MEH7800H) (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes for 4 weight portions, acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system, the trade name of packing material; SO-E2, maximum particle diameter 1.4 μ m, average grain diameter 0.5 μ m) 40 weight portions are dissolved in the methylethylketone adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film A of thickness 5 μ m.
(embodiment 2)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins are (bright and change into Co., Ltd. and make, trade name: MEH7800H) (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes for 4 weight portions, acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system, the trade name of packing material; SO-E2, maximum particle diameter 1.4 μ m, average grain diameter 0.5 μ m) 80 weight portions are dissolved in the methylethylketone adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film B of thickness 5 μ m.
(embodiment 3)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins are (bright and change into Co., Ltd. and make, trade name: MEH7800H) (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes for 12 weight portions, acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system, the trade name of packing material; SO-E2, maximum particle diameter 1.4 μ m, average grain diameter 0.5 μ m) 40 weight portions are dissolved in the methylethylketone adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film C of thickness 3 μ m.
(embodiment 4)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins are (bright and change into Co., Ltd. and make, trade name: MEH7800H) (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes for 4 weight portions, acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system, the trade name of packing material; SO-E2, maximum particle diameter 1.4 μ m, average grain diameter 0.5 μ m) 80 weight portions are dissolved in the methylethylketone adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film D of thickness 3 μ m.
(embodiment 5)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E3, maximum particle diameter 5.0 μ m, average grain diameter 0.9 μ m) 40 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film E of thickness 5 μ m.
(embodiment 6)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E3, maximum particle diameter 5.0 μ m, average grain diameter 0.9 μ m) 80 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film F of thickness 5 μ m.
(comparative example 1)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E3, maximum particle diameter 5.0 μ m, average grain diameter 0.9 μ m) 40 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film G of thickness 3 μ m.
(comparative example 2)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E3, maximum particle diameter 5.0 μ m, average grain diameter 0.9 μ m) 80 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film H of thickness 3 μ m.
(comparative example 3)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E5, maximum particle diameter 8.0 μ m, average grain diameter 1.3 μ m) 40 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film I of thickness 5 μ m.
(comparative example 4)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E5, maximum particle diameter 8.0 μ m, average grain diameter 1.3 μ m) 80 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film J of thickness 5 μ m.
(comparative example 5)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E5, maximum particle diameter 8.0 μ m, average grain diameter 1.3 μ m) 40 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film K of thickness 3 μ m.
(comparative example 6)
(Nippon Kayaku K. K makes with three hydroxyphenyl methane type epoxy resin, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne phenolic varnish type phenolic resins is (bright and change into Co., Ltd. and make, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. makes acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ Star Network ス Co., Ltd. system as packing material, trade name: SO-E5, maximum particle diameter 8.0 μ m, average grain diameter 1.3 μ m) 80 weight portions are dissolved in the methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
The demoulding that the solution coat of this adhesive compound consists of to the pet film as thickness 38 μ m release liner, after the polysiloxanes demoulding is processed is processed on the film, then 130 ℃ of dryings 2 minutes.Thus, make the thermosetting die bonding film L of thickness 3 μ m.
(average grain diameter of packing material and the mensuration of maximum particle diameter)
The average grain diameter of packing material and the mensuration of maximum particle diameter are used particle size distribution meter (HORIBA manufacturing, the device name: LA-910) carry out of luminosity formula.The result is shown in following table 1 and table 2.In addition, about maximum particle diameter, representing particle diameter with transverse axis, representing with the longitudinal axis in the two-dimensional diagram of relative particle weight, when establishing the area that is surrounded by baseline and this curve and being 100%, will from the little side of particle diameter accumulate this area and the cumulative area that the obtains particle diameter when reaching 100% as maximum particle diameter.
(the maximum profile height Rt of roughness curve)
The maximum profile height Rt of the roughness curve of the thermosetting die bonding film of making in each embodiment and the comparative example, according to JIS B0601, (Japanese PVC one コ company makes, and WYKO), carries out measuring after the gradient correction on surface to use contactless surface roughness measurement device.The result is shown in following table 1 and table 2.
(semiconductor wafer has or not damaged affirmation)
At first, make the cutting film.That is, solution and drying at comprising of thickness 100 μ m of polyolefinic base material coating acrylic pressure-sensitive adhesive compositions form the adhesive phase of thickness 10 μ m, thereby have made the cutting film.
In addition, the solution of described acrylic adhesives prepares in the following manner.That is, at first with butyl acrylate, ethyl acrylate, 2-Hydroxy ethyl acrylate and acrylic acid with 60/40/4/1 ratio copolymerization, obtain the acrylic polymer of weight average molecular weight 800,000.Then, in these acrylic polymer 100 weight portions, cooperate multi-functional epoxy's class crosslinking agent 0.5 weight portion as crosslinking agent, as dipentaerythritol monohydroxy five acrylate 90 weight portions of optical polymerism compound, as Alpha-hydroxy cyclohexyl-phenyl ketone 5 weight portions of Photoepolymerizationinitiater initiater, they are dissolved in the toluene as organic solvent.Thus, make the solution of described acrylic adhesives.
Then, the thermosetting die bonding film of the demoulding being processed on the film pastes on the adhesive phase of described cutting film.The stickup condition is 40 ℃ of laminating temperatures, line pressure 5kgf/cm.Thus, made the dicing/die bonding film of the thermosetting die bonding film with each embodiment and comparative example.
Then, semiconductor wafer (12 inches of diameters, thickness 50 μ m) is installed on the thermosetting die bonding film of each dicing/die bonding film.Mounting condition is as described below.
[stickup condition]
Sticker: day eastern smart machine manufacturing, MA-3000III
Stickup speed: 10mm/ second
Paste pressure: 0.25MPa
Platform temperature during stickup: 40 ℃
Then, carry out the cutting of semiconductor wafer, form the semiconductor chip of each chip size 5mm.The cutting condition is as described below.
[cutting condition]
Cutter sweep: デ イ ス コ company makes, DFD-6361
Cut ring: 2-8-1(デ イ ス コ company makes)
Cutting speed: 80mm/ second
Cutting blade: the 2050HEDD that デ イ ス コ company makes
Cutting blade rotating speed: 40,000rpm
Blade height: 0.170mm
Cutting mode: A pattern/staged cutting
In addition, each dicing/die bonding film is drawn, making each chip chamber is the expansion operation of predetermined distance.Then, die bonding film is picked up with semiconductor chip with the mode that pin pushes away with base material one side from each dicing/die bonding film.Pickup conditions is as described below.
[pickup conditions]
Pin: total length 10mm, diameter 0.7mm, acute angle 15 degree, front end R350 μ m
Pin number: 5
Pushing volume on the pin: 350 μ m
Push away speed on the pin: 5mm/ second
Chuck (the コ レ Star ト) retention time: 200 milliseconds
Expansion: 3mm
Then, with the semiconductor chip chip join of picking up to lead frame.Confirm the breakage of the semiconductor chip of this moment.The result is shown in following table 1 and table 2.In addition, the chip join condition is as described below.
[chip join condition]
Chip join temperature: 120 ℃
Chip join pressure: 0.1MPa
The chip join time: 1 second
Rear curing: 150 ℃ lower 1 hour
(result)
Shown in following table 1 and table 2, resemble its thickness Y(μ m the thermosetting die bonding film of various embodiments of the present invention) with the maximum particle diameter of packing material be X(μ m) ratio X/Y(-) be 1 when following, can be in the situation that do not make semiconductor chip breakage chip join to lead frame.On the other hand, when surpassing the thermosetting die bonding film of each comparative example of 1 for ratio X/Y, semiconductor chip produces damaged when confirming chip join.
Table 1
Figure BDA00002483226700331
Table 2

Claims (8)

1. thermosetting die bonding film, the packing material that contains adhesive compound and comprise particulate, wherein,
If the thickness of described thermosetting die bonding film is Y(μ m), the maximum particle diameter of establishing described packing material is X(μ m) time, ratio X/Y(-) be below 1.
2. thermosetting die bonding film as claimed in claim 1, wherein,
Described X(μ m) in the scope of 0.05 ~ 5 μ m.
3. thermosetting die bonding film as claimed in claim 1 or 2, wherein,
Described Y(μ m) in the scope of 1 ~ 5 μ m.
4. such as each described thermosetting die bonding film in the claims 1 to 3, wherein,
The content of described packing material with respect to described adhesive compound 100 weight portions in the scope of 1 ~ 80 weight portion.
5. such as each described thermosetting die bonding film in the claim 1 to 4, wherein,
The content of described packing material with respect to described adhesive compound 100 parts by volume in the scope of 1 ~ 40 parts by volume.
6. such as each described thermosetting die bonding film in the claim 1 to 5, wherein,
The maximum profile height Rt of the roughness curve of described thermosetting die bonding film is in the scope of 0.1 ~ 2.3 μ m.
7. a dicing/die bonding film is characterized in that, each described thermosetting die bonding film in the stacked requirement 1 to 6 of having the right on the cutting film.
8. the manufacture method of a semiconductor device, right to use require 7 described dicing/die bonding films to make semiconductor devices, and described method comprises following operation:
Take described thermosetting die bonding film as sticking veneer, paste the stickup operation of described dicing/die bonding film at the back side of semiconductor wafer,
Described semiconductor wafer cut with described thermosetting die bonding film and form the cutting action of semiconductor chip,
Described semiconductor chip is picked up operation with described thermosetting die bonding film from what described dicing/die bonding film picked up, and
By described thermosetting die bonding film, under the condition in 100 ~ 180 ℃ of temperature, activating pressure 0.05 ~ 0.5MPa, 0.1 ~ 5 second scope of engaging time, with the chip join operation of described semiconductor chip chip join to the adherend.
CN201180026558.1A 2010-06-08 2011-06-03 Thermosetting die bonding film Active CN102934211B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010131329 2010-06-08
JP2010-131329 2010-06-08
PCT/JP2011/062795 WO2011155406A1 (en) 2010-06-08 2011-06-03 Heat-curable die-bonding film

Publications (2)

Publication Number Publication Date
CN102934211A true CN102934211A (en) 2013-02-13
CN102934211B CN102934211B (en) 2016-01-20

Family

ID=45098013

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180026558.1A Active CN102934211B (en) 2010-06-08 2011-06-03 Thermosetting die bonding film

Country Status (4)

Country Link
JP (1) JP6013709B2 (en)
CN (1) CN102934211B (en)
TW (1) TWI439530B (en)
WO (1) WO2011155406A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107922798A (en) * 2015-09-01 2018-04-17 琳得科株式会社 Bonding sheet

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016166835A1 (en) 2015-04-15 2016-10-20 三菱電機株式会社 Semiconductor device
JP6905579B1 (en) * 2019-12-27 2021-07-21 株式会社有沢製作所 Adhesive tape

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035841A (en) * 2002-07-08 2004-02-05 Hitachi Chem Co Ltd Adhesive sheet, semiconductor device, and its production method
US20040127613A1 (en) * 2002-12-11 2004-07-01 Shin-Etsu Chemical Co., Ltd. Radiation curing silicone rubber composition, adhesive silicone elastomer film formed from same, semiconductor device using same, and method of producing semiconductor device
CN1670942A (en) * 2004-03-17 2005-09-21 日东电工株式会社 Dicing die-bonding film
CN1806326A (en) * 2004-03-15 2006-07-19 日立化成工业株式会社 Dicing/die boding sheet
CN1913113A (en) * 2005-08-10 2007-02-14 株式会社瑞萨科技 Semiconductor device and a manufacturing method of the same
JP2007145954A (en) * 2005-11-25 2007-06-14 Toray Ind Inc Thermoplastic resin composition and its molded article
JP2010028087A (en) * 2008-06-18 2010-02-04 Sekisui Chem Co Ltd Bonding film, dicing-diebonding tape, and method of manufacturing semiconductor device
JP2010062205A (en) * 2008-09-01 2010-03-18 Nitto Denko Corp Method for manufacturing dicing die bonding film
JP2010080921A (en) * 2008-08-28 2010-04-08 Nitto Denko Corp Thermosetting die-bonding film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303472A (en) * 2005-03-23 2006-11-02 Nitto Denko Corp Dicing die bond film
JP2007294767A (en) * 2006-04-26 2007-11-08 Renesas Technology Corp Method for manufacturing semiconductor device
JP5090241B2 (en) * 2008-04-17 2012-12-05 リンテック株式会社 Die sort sheet
JP4888479B2 (en) * 2008-12-01 2012-02-29 日立化成工業株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004035841A (en) * 2002-07-08 2004-02-05 Hitachi Chem Co Ltd Adhesive sheet, semiconductor device, and its production method
US20040127613A1 (en) * 2002-12-11 2004-07-01 Shin-Etsu Chemical Co., Ltd. Radiation curing silicone rubber composition, adhesive silicone elastomer film formed from same, semiconductor device using same, and method of producing semiconductor device
CN1806326A (en) * 2004-03-15 2006-07-19 日立化成工业株式会社 Dicing/die boding sheet
CN1670942A (en) * 2004-03-17 2005-09-21 日东电工株式会社 Dicing die-bonding film
CN1913113A (en) * 2005-08-10 2007-02-14 株式会社瑞萨科技 Semiconductor device and a manufacturing method of the same
JP2007145954A (en) * 2005-11-25 2007-06-14 Toray Ind Inc Thermoplastic resin composition and its molded article
JP2010028087A (en) * 2008-06-18 2010-02-04 Sekisui Chem Co Ltd Bonding film, dicing-diebonding tape, and method of manufacturing semiconductor device
JP2010080921A (en) * 2008-08-28 2010-04-08 Nitto Denko Corp Thermosetting die-bonding film
JP2010062205A (en) * 2008-09-01 2010-03-18 Nitto Denko Corp Method for manufacturing dicing die bonding film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107922798A (en) * 2015-09-01 2018-04-17 琳得科株式会社 Bonding sheet

Also Published As

Publication number Publication date
JP6013709B2 (en) 2016-10-25
WO2011155406A1 (en) 2011-12-15
TWI439530B (en) 2014-06-01
JP2012019204A (en) 2012-01-26
CN102934211B (en) 2016-01-20
TW201200575A (en) 2012-01-01

Similar Documents

Publication Publication Date Title
CN101617395B (en) Thermosetting die bonding film
CN101617390B (en) Dicing/die bonding film
CN102222633B (en) Thermosetting die bond film, dicing die bond film and method for manufacturing semiconductor device
CN102265388A (en) Thermosetting die-bonding film
CN102190975B (en) Die bond film, dicing die bond film, and semiconductor device
CN102676093B (en) Die bonding film and uses thereof
CN101515564B (en) Membrane with dicing and die-bonding film
CN105647405B (en) Conductive film-like adhesive, dicing tape with film-like adhesive, and method for manufacturing semiconductor device
CN103140917B (en) Dicing/die bonding film and manufacturing method for semiconductor device
CN101661909B (en) Thermosetting die-bonding film
CN101385135B (en) Process for producing semiconductor device
CN102169849B (en) Tape for holding chip, method of holding chip-shaped workpiece, method of manufacturing semiconductor device
CN101855710B (en) Dicing die-bonding film
CN101645427B (en) Dicing die-bonding film
CN102010677B (en) Thermosetting die bonding film, dicing/die bonding film and semiconductor device
CN102190977A (en) Dicing die-bonding film
CN103081069B (en) Film for semiconductor apparatus and semiconductor device
CN102074494A (en) Thermosetting die-bonding film
CN101857778A (en) Thermosetting die bonding film
CN102153956A (en) Thermosetting adhesive film, adhesive film with dicing film, and manufacturing method of semiconductor apparatus using the thermosetting adhesive film or the adhesive film with dicing film
CN104946152A (en) Cutting film, cutting/chip bonding film and semiconductor making method
CN109309039A (en) Die bonding film, cutting die bonding film and manufacturing method for semiconductor device
CN104946147A (en) Chip bonding film, cutting-chip bonding film, and laminating film
CN103165474A (en) Method for producing semiconductor device
CN102842541A (en) Laminated film and use thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant