CN102934211B - Thermosetting die bonding film - Google Patents

Thermosetting die bonding film Download PDF

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Publication number
CN102934211B
CN102934211B CN201180026558.1A CN201180026558A CN102934211B CN 102934211 B CN102934211 B CN 102934211B CN 201180026558 A CN201180026558 A CN 201180026558A CN 102934211 B CN102934211 B CN 102934211B
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Prior art keywords
die bonding
bonding film
semiconductor chip
film
thermosetting die
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CN201180026558.1A
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Chinese (zh)
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CN102934211A (en
Inventor
井上刚一
菅生悠树
三隅贞仁
松村健
高本尚英
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Nitto Denko Corp
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Nitto Denko Corp
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    • H01L23/293—Organic, e.g. plastic
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)

Abstract

The invention provides when semiconductor chip being joined on adherend by thermosetting die bonding film, can prevent from by packing material, the stress that this semiconductor chip applies local also being reduced to the thermosetting die bonding film of the breakage of semiconductor chip thus and possessing the dicing/die bonding film of this thermosetting die bonding film.Thermosetting die bonding film of the present invention, containing adhesive compound and the packing material comprising particulate, wherein, if the thickness of described thermosetting die bonding film is Y(μm), set the maximum particle diameter of described packing material as X(μm) time, ratio X/Y(-) be less than 1.

Description

Thermosetting die bonding film
Technical field
The present invention relates at the thermosetting die bonding film will used during gluing for such as semiconductor chip being fixed on the adherend such as substrate or lead frame.In addition, the present invention relates to this thermosetting die bonding film and the dicing/die bonding film cutting pellicular cascade.In addition, the present invention relates to the method using described dicing/die bonding film to manufacture semiconductor device.
Background technology
In the past, in the manufacture process of semiconductor device, when lead frame or electrode member are fixed semiconductor chip, adopt silver slurry.Described fixing process is coated with pulpous state adhesive by the chip bonding pad at lead frame etc., carries semiconductor chip thereon and pulpous state adhesive layer is solidified to carry out.
But slurry adhesive produces large deviation due to its viscosity behavior or deterioration etc. in coating weight or coating shape etc.As a result, the pulpous state Adhesive thickness of formation is uneven, and therefore the constant intensity of semiconductor chip lacks reliability.That is, when the coating weight of pulpous state adhesive is not enough, the constant intensity between semiconductor chip and electrode member reduces, thus semiconductor chip is peeled off in follow-up wire bond operation.On the other hand, when the coating weight of pulpous state adhesive is too much, pulpous state adhesive meeting curtain coating to semiconductor chip produces bad characteristic, thus rate of finished products and reliability decrease.Problem in fixing process like this, the maximization with semiconductor chip becomes remarkable especially.Therefore, need the control of the coating weight of carrying out pulpous state adhesive continually, thus bring problem to workability or productivity ratio.
In the painting process of this pulpous state adhesive, there is the method be applied to respectively by pulpous state adhesive on the chip of lead frame and formation.But in the method, pulpous state adhesive layer is difficult to homogenizing, and the coating of pulpous state adhesive needs special device with long-time.Therefore, propose dicing/die bonding film, it is gluing maintenance semiconductor wafer in cutting action, and also provides the chip needed for installation procedure fixedly to stick with glue oxidant layer (such as, referenced patent document 1).
In this dicing/die bonding film, support base material is provided with adhesive layer (die bonding film) in a releasable manner, after semiconductor wafer being cut under the maintenance of this adhesive layer, semiconductor chip is peeled off by stretch support base material together with adhesive layer, it is reclaimed respectively, and is fixed on the adherends such as lead frame by this adhesive layer.
In addition, in following patent documentation 2, disclose from giving thermal conductivity, regulate melt viscosity, give thixotropic viewpoint and consider and adhesive layer, be added with the dicing/die bonding film of inorganic filler etc.
But there is following problem in the dicing/die bonding film recorded in described patent documentation 2.That is, with the high capacity of semiconductor device taking memory as representative, thin layer semiconductor chip is carried out stacked semiconductor packages with multistage shape and becomes main flow.In addition, also restriction is existed to the thickness of semiconductor packages self, thin layer therefore also at just row die bonding film.Based on such background, semiconductor wafer or the mechanical strength of semiconductor chip its panelization obtained extremely decline, and therefore become fragile.Therefore, by die bonding film by semiconductor chip chip join to adherend time, there is the problem of semiconductor chip breakage.
As the reason of described semiconductor chip breakage, the cooperation can enumerating the packing materials such as the inorganic filler contained in die bonding film is incorrect.Namely, improper and its content of the size of the packing material in die bonding film is also in inappropriate situation, the activating pressure applied during chip join makes stress concentrate on semiconductor chip partly by packing material, result causes the breakage of semiconductor chip.
Prior art document
Patent documentation
Patent documentation 1: Japanese Laid-Open Patent Publication 60-57642 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2008-88411 publication
Summary of the invention
The present invention foundes in view of foregoing problems, its object is to provide a kind of by thermosetting die bonding film by semiconductor chip chip join to adherend time, can prevent from applying to this semiconductor chip the thermosetting die bonding film that stress locally also reduces the breakage of semiconductor chip thus by packing material, and possess the dicing/die bonding film of this thermosetting die bonding film.In addition, the invention provides the method using described dicing/die bonding film to manufacture semiconductor device.
The present inventor etc. are studied to solve the manufacture method of aforementioned existing problem to thermosetting die bonding film and the dicing/die bonding film and semiconductor device that possess this thermosetting die bonding film.Found that, by adopting following formation can realize aforementioned object, and completing the present invention.
Namely, thermosetting die bonding film of the present invention, containing adhesive compound and the packing material comprising particulate, wherein, if the thickness of described thermosetting die bonding film is Y(μm), set the maximum particle diameter of described packing material as X(μm) time, ratio X/Y(-) be less than 1.
According to aforementioned formation, thickness Y(μm by by thermosetting die bonding film) with the maximum particle diameter X(μm of described packing material) relation be set as X/Y≤1, when being joined on adherend by semiconductor chip by die bonding film, local concentrated by packing material stress to semiconductor chip can be reduced by.Thus, even if semiconductor chip slimming, also can reduce its breakage and manufacture semiconductor device, thus improving output.
In aforementioned formation, preferred described X(μm) in the scope of 0.05 ~ 5 μm.
In addition, in aforementioned formation, preferred described Y(μm) in the scope of 1 ~ 5 μm.
In addition, in aforementioned formation, the content of preferred described packing material relative to described adhesive compound 100 weight portion in the scope of 1 ~ 80 weight portion.
In addition, in aforementioned formation, the content of preferred described packing material relative to described adhesive compound 100 parts by volume in the scope of 1 ~ 40 parts by volume.
In addition, in aforementioned formation, the maximum profile height Rt of the roughness curve of preferred described thermosetting die bonding film is in the scope of 0.1 ~ 2.3 μm.
In addition, dicing/die bonding film of the present invention, in order to solve aforementioned problems, is laminated with aforesaid thermosetting die bonding film cutting on film.
In addition, the manufacture method of semiconductor device of the present invention, in order to solve aforementioned problems, aforesaid dicing/die bonding film is used to manufacture semiconductor device, described method comprises following operation: with described thermosetting die bonding film for sticking veneer, pastes the adhering processes of described dicing/die bonding film at the back side of semiconductor wafer; Described semiconductor wafer is cut together with described thermosetting die bonding film and forms the cutting action of semiconductor chip; By described semiconductor chip together with described thermosetting die bonding film from the pickup process that described dicing/die bonding film picks up; With by described thermosetting die bonding film, under the condition in temperature 100 ~ 180 DEG C, activating pressure 0.05 ~ 0.5MPa, the engaging time scope of 0.1 ~ 5 second, by described semiconductor chip chip join to the chip join operation on adherend.
In described method, by semiconductor chip chip join to adherend time, use the thermosetting die bonding film by causing stress concentrated minimizing on a semiconductor die due to the packing material coordinated in the film.Therefore, although carry out the chip join of semiconductor chip under aforesaid chip join condition, the breakage of semiconductor chip can also be reduced.That is, time for described method, the breakage of semiconductor chip can be reduced, improve output and manufacture semiconductor device.
Invention effect
The present invention can realize following effect by aforesaid means.
That is, in thermosetting die bonding film of the present invention, the thickness Y(μm of thermosetting die bonding film) with the maximum particle diameter X(μm of packing material) pass be X/Y≤1.Thus, by thermosetting die bonding film by semiconductor chip chip join to adherend time, contained packing material applies local stress to semiconductor chip can be reduced in film.As a result, the breakage of semiconductor chip can be reduced, improve output and manufacture semiconductor device.
Accompanying drawing explanation
Fig. 1 is the generalized section of the dicing/die bonding film representing an embodiment of the invention.
Fig. 2 is the generalized section of the dicing/die bonding film representing another embodiment of the invention.
Fig. 3 is the generalized section of the example represented by the die bonding film mounting semiconductor chip in an embodiment of the invention.
Fig. 4 is the generalized section of the example represented by the three-dimensional mounting semiconductor chip of described die bonding film.
Fig. 5 represents to use described die bonding film, installs the generalized section of the example of two semiconductor chips across partition three-dimensional.
Symbol description
1 base material
2 adhesive phases
3 die bonding films (thermosetting die bonding film)
4 semiconductor wafers
5 semiconductor chips
6 adherends
7 bonding wires
8 sealing resins
9 partitions
10,11 dicing/die bonding films
13 die bonding films (thermosetting die bonding film)
15 semiconductor chips
21 die bonding films (thermosetting die bonding film)
Embodiment
(dicing/die bonding film)
For thermosetting die bonding film of the present invention (hereinafter referred to as " die bonding film "), the dicing/die bonding film obtained to be laminated for one with cutting film (adhesive film) illustrates as follows.Fig. 1 is the generalized section of the dicing/die bonding film representing present embodiment.Fig. 2 is the generalized section of another dicing/die bonding film representing present embodiment.
As shown in Figure 1, dicing/die bonding film 10 has the structure being laminated with die bonding film 3 on cutting film.Cutting film is consisted of stacked adhesive phase 2 on base material 1, and die bonding film 3 is arranged on this adhesive phase 2.In addition, the present invention also can be illustrated in figure 2 the formation only forming die bonding film 3 ' in workpiece adhesive portion.
Described base material 1 has UV transmissive, and as the intensity parent of dicing/die bonding film 10,11.Can enumerate such as: low density polyethylene (LDPE), linear polyethylene, medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, atactic copolymerized polypropene, block copolymerization polypropylene, homo-polypropylene, polybutene, the polyolefin such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) copolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, polyurethane, PETG, the polyester such as PEN, Merlon, polyimides, polyether-ether-ketone, polyimides, Polyetherimide, polyamide, Wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamides (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulosic resin, polyorganosiloxane resin, metal (paper tinsel), paper etc.
In addition, as the material of base material 1, the polymer such as the crosslinked of aforementioned resin can be enumerated.Described plastic film can not stretch and use, and uses after also can carrying out single shaft or biaxial stretch-formed process as required.Utilize the resin sheet being imparted heat-shrinkable by stretch processing etc., by making this base material 1 thermal contraction after dicing, the gluing area of adhesive phase 2 and die bonding film 3,3 ' can be reduced, thus easily can reclaim semiconductor chip.
In order to improve and the adhesiveness of adjoining course, retentivity etc., usual surface treatment can be implemented in the surface of base material 1, such as, the chemistry such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionization radial line process or physical treatment, the coating process of silane coupling agent (such as adhesion substance described later) is utilized.
Described base material 1 can the suitably of the same race or different types of material of choice for use, also can use as required different materials is blended after material.In addition, in order to give base material 1 antistatic performance, can arrange on described base material 1 comprise metal, alloy, their thickness of oxide etc. is the evaporation layer of conductive materials.Base material 1 can be individual layer or two or more multilayers.
The thickness of base material 1 is not particularly limited, and can suitably determine, is generally about 5 μm ~ about 200 μm.
Described adhesive phase 2 comprises ultraviolet-curing adhesive and forms.Ultraviolet-curing adhesive can increase the degree of cross linking by ultraviolet irradiation and easily reduce its bonding force, by only to the part 2a irradiation ultraviolet radiation corresponding with semiconductor wafer adhesive portion of the adhesive phase 2 shown in Fig. 2, the difference of the bonding force of 2a and other parts 2b can be set.
In addition, by the die bonding film 3 ' according to Fig. 2, the adhesive phase 2 of ultraviolet hardening is solidified, easily can form the described part 2a that bonding force significantly declines.On the described part 2a that bonding force declines because die bonding film 3 ' is pasted onto solidification, the character easily peeled off when therefore the described part 2a of adhesive phase 2 and the interface of die bonding film 3 ' have pickup.On the other hand, the part of non-irradiation ultraviolet radiation has sufficient bonding force, forms described part 2b.
As previously mentioned, in the adhesive phase 2 of the dicing/die bonding film 10 shown in Fig. 1, the described part 2b formed by uncured ultraviolet-curing adhesive and die bonding film 3 bond, and can guarantee confining force when cutting.Like this, ultraviolet-curing adhesive can with good gluing-peel off balanced support for semiconductor chip being fixed to the die bonding film 3 on the adherends such as substrate.In the adhesive phase 2 of the dicing/die bonding film 11 shown in Fig. 2, paster ring (ウ エ Ha リ ソ グ) can be fixed by described part 2b.
Described ultraviolet-curing adhesive can use ultra-violet solidified functional groups such as having carbon-to-carbon double bond without particular limitation, and shows fusible ultraviolet-curing adhesive.As ultraviolet-curing adhesive, can illustrate such as: the addition type ultraviolet-curing adhesive being combined with ultra-violet solidified monomer component or oligomer composition in the contact adhesive that acrylic adhesives, rubber adhesive etc. are general.
As described contact adhesive, the clean washing performance etc. of the organic solvents such as the ultra-pure water of electronic unit polluted from the viewpoint of the taboo such as semiconductor wafer or glass or alcohol, the preferably acrylic adhesives of polymer based on acrylic polymer.
As described acrylic polymer, can enumerate such as: use (methyl) alkyl acrylate (the straight or branched Arrcostab of the carbon number 1 ~ 30 of such as alkyl, particularly carbon number 4 ~ 18, as methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-Octyl Nitrite, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, hendecane ester, dodecane ester, tridecane ester, tetradecane ester, hexadecane ester, octadecane ester, eicosane ester etc.; Deng) and one or more acrylic polymers etc. as monomer component of (methyl) acrylate ester (such as, ring pentyl ester, cyclohexyl etc.).In addition, (methyl) acrylate represents acrylate and/or methacrylate, and (methyl) of the present invention all represents identical implication.
Described acrylic polymer, in order to improve cohesiveness, thermal endurance etc., as required can containing with can with unit corresponding to other monomer component of described (methyl) alkyl acrylate or the copolymerization of cycloalkanes ester.As such monomer component, can enumerate such as: carboxyl group-containing monomer, as acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid etc.; Anhydride monomers, as maleic anhydride, itaconic anhydride etc.; Hydroxyl monomer, as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid-4-hydroxybutyl, the own ester of (methyl) acrylic acid-6-hydroxyl, (methyl) acrylic acid-8-hydroxyl monooctyl ester, (methyl) acrylic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) acrylic acid-12-hydroxylauric ester, (methyl) acrylic acid (4-hydroxymethylcyclohexyl) methyl esters etc.; Containing sulfonic group monomer, as styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) acrylic acid sulphur propyl ester, (methyl) acryloyl-oxy naphthalene sulfonic acids etc.; Phosphorous acid-based monomers, as acryloyl phosphoric acid-2-hydroxy methacrylate etc.; Acrylamide, acrylonitrile etc.These copolymerisable monomer compositions can use one or more.The use amount of these copolymerisable monomers is preferably less than 40 % by weight of whole monomer component.
In addition, described acrylic polymer in order to carry out crosslinked as required also can containing polyfunctional monomer etc. as comonomer composition.As such polyfunctional monomer, can enumerate such as: hexylene glycol two (methyl) acrylate, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These polyfunctional monomers also can use one or more.The use amount of polyfunctional monomer is considered to be preferably less than 30 % by weight of whole monomer component from viewpoints such as adhesion characteristics.
Described acrylic polymer can by obtaining the polymerization of mixtures of single monomer or two or more monomer.Polymerization can be undertaken by any-modes such as polymerisation in solution, emulsion polymerisation, polymerisation in bulk, suspension polymerisations.From preventing from considering viewpoints such as the pollutions of clean adherend, the content of preferred low molecular weight substance is few.From this point to consider, the number-average molecular weight of acrylic polymer is preferably about more than 300,000, and more preferably from about 400,000 ~ about 3,000,000.
In addition, in order to the number-average molecular weight of the acrylic polymer etc. of polymer based on improving, in described adhesive, also suitably external crosslinker can be adopted.The concrete means of outside cross-linking method can be enumerated: add the so-called crosslinking agents such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine class crosslinking agent and the method making it react.When using external crosslinker, its use amount is according to the balance of the base polymer crosslinked with wish and suitably determine as the use of adhesive.Generally speaking, relative to described base polymer 100 weight portion, be preferably below 5 weight portions, more preferably coordinate 0.1 ~ 5 weight portion.In addition, as required, in adhesive, except aforesaid ingredients, the additives such as existing known various tackifier, age resister can also be used.
As the described ultra-violet solidified monomer component for coordinating, can enumerate such as: oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, ultra-violet solidified oligomer composition can enumerate the various oligomer such as polyurethanes, polyethers, polyesters, polycarbonate-based, polybutadiene, and its molecular weight is suitable in the scope of about 100 ~ about 30000.The use level of ultra-violet solidified monomer component or oligomer composition suitably can determine the amount of the bonding force that can reduce adhesive phase according to the kind of described adhesive phase.Generally speaking, relative to base polymer 100 weight portion such as acrylic polymer forming adhesive, such as, be about 5 weight portions ~ about 500 weight portions, preferably about 40 weight portions ~ about 150 weight portions.
In addition, as ultraviolet-curing adhesive, except the addition type ultraviolet-curing adhesive illustrated above, can also enumerate and be used in polymer lateral chain or main chain or the inherent type ultraviolet-curing adhesive of polymer based on polymer that main chain terminal has a carbon-carbon double bond.Inherent type ultraviolet-curing adhesive is without the need to containing or not containing the oligomer composition etc. as low molecular weight compositions in a large number, therefore oligomer composition etc. can not be passed in time and move in adhesive, the adhesive phase of stable Rotating fields can be formed, therefore preferably.
The described base polymer with carbon-carbon double bond, can use without particular limitation and have carbon-carbon double bond and have fusible polymer.As such base polymer, preferably using acrylic polymer as the polymer of basic framework.As the basic framework of acrylic polymer, the acrylic polymer that foregoing illustrative is crossed can be enumerated.
In described acrylic polymer, the introducing method of carbon-carbon double bond is not particularly limited, and can adopt various method, and carbon-carbon double bond be introduced polymer lateral chain in MOLECULE DESIGN than being easier to.Can enumerate such as: in advance by after the monomer with functional group and acrylic polymer copolymerization, make to have and can carry out the method for condensation or addition reaction when keeping carbon-carbon double bond ultra-violet solidified with the compound of the functional group of this functional group reactions and carbon-carbon double bond.
As the combination example of these functional groups, can enumerate such as: carboxyl and epoxy radicals, carboxyl and '-aziridino, hydroxyl and NCO etc.Consider the easiness of reactive tracing, the combination of preferred hydroxyl and NCO in the combination of these functional groups.In addition, as long as have the combination of the acrylic polymer of carbon-carbon double bond described in being generated by the combination of these functional groups, then functional group can in any one party of acrylic polymer and described compound, in described preferred compositions, the situation that preferred acrylic polymer has hydroxyl, described compound has NCO.Now, as the isocyanate compound with carbon-carbon double bond, can enumerate such as: methacryl isocyanates, 2-methylacryoyloxyethyl isocyanates, an isopropenyl-α, alpha-alpha-dimethyl dibenzoyl isocyanates etc.In addition, as acrylic polymer, copolymerization can be used to have the polymer of ether compound etc. of the hydroxyl monomer of foregoing illustrative or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl base ether.
There is described in described inherent type ultraviolet-curing adhesive can be used alone the base polymer (particularly acrylic polymer) of carbon-carbon double bond, also can coordinate described ultra-violet solidified monomer component or oligomer composition in the scope not damaging characteristic.Ultra-violet solidified oligomer composition etc. relative to base polymer 100 weight portion usually in the scope of 30 weight portions, the preferably scope of 0 ~ 10 weight portion.
Described ultraviolet-curing adhesive can contain Photoepolymerizationinitiater initiater when being solidified by ultraviolet etc.As Photoepolymerizationinitiater initiater, can enumerate such as: α-one alcohol compound, as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone etc.; Acetophenone compounds, as methoxyacetophenone, 2,2-dimethoxy-2-phenyl acetophenone, 2,2-diethoxy acetophenones, 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-2-morpholinopropane-1-ketone etc.; Benzoin ether compounds, as benzoin ethyl ether, benzoin iso-propylether, anisoin methyl ether etc.; Ketal compounds, as dibenzoyl dimethyl ketal etc.; Aromatic sulfonyl compounds, as 2-naphthalene sulfonyl chloride etc.; Photolytic activity oxime compound, as 1-phenyl-1,2-pentanedione-2-(O-carbethoxyl group) oxime etc.; Benzophenone compound, as benzophenone, benzoylbenzoic acid, 3,3 '-dimethyl-4-methoxy benzophenone etc.; Thioxanthones compounds, as thioxanthones, CTX, 2-methyl thioxanthones, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthones, 2,4-diisopropylthioxanthone etc.; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.The use level of Photoepolymerizationinitiater initiater relative to base polymer 100 weight portion such as acrylic polymer forming adhesive, such as, is about 0.05 weight portion ~ about 20 weight portions.
In addition, as ultraviolet-curing adhesive, can enumerate such as: disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, containing have the addition polymerization compound of more than 2 unsaturated bonds, the photopolymerizable compound such as alkoxy silane with epoxy radicals and carbonyls, organosulfur compound, peroxide, amine, the rubber adhesive of the Photoepolymerizationinitiater initiaters such as salt compounds or acrylic adhesives etc.
Bonding force after the ultraviolet curing of described adhesive phase 2, be 0.001 ~ 1N/10mm width relative to die bonding film 3,3 ', preferably 0.005 ~ 0.5N/10mm width, more preferably 0.01 ~ 0.1N/10mm width (180 degree of peeling forces, peeling rate 300mm/mm).Time in described number range, when the semiconductor chip of the adhesive with die bonding film is picked up, this semiconductor chip can not be fixed to more than necessity, better pick can be realized.
As the method forming described part 2a in described adhesive phase 2, can enumerate: form ultraviolet-curing adhesive layer 2 on base material 1 after, to the described part 2a irradiation ultraviolet radiation method that makes it solidify partly.The Ultraviolet radiation of local can be undertaken by the photomask being formed with the pattern corresponding with the part 3b beyond semiconductor wafer adhesive portion 3a etc.In addition, the method etc. that point-like irradiation ultraviolet radiation is cured can be enumerated.The formation of ultraviolet-curing adhesive layer 2 can be undertaken by being transferred on base material 1 by the ultraviolet-curing adhesive layer be arranged on partition.The Ultraviolet radiation of local also can carry out the ultraviolet-curing adhesive layer 2 be arranged on partition.
In the adhesive phase 2 of dicing/die bonding film 10, Ultraviolet radiation can be carried out to a part for adhesive phase 2, make the bonding force of the bonding force < other parts 2b of described part 2a.Namely, the whole of the part beyond to the part corresponding with semiconductor wafer adhesive portion 3a of at least one side of base material 1 or local can be used to carry out the base material of shading, Ultraviolet radiation is carried out after forming ultraviolet-curing adhesive layer 2 on the substrate, make corresponding with semiconductor wafer adhesive portion 3a partially cured, thus form the described part 2a that bonding force declines.As light screening material, the material that can become photomask can be made by printing or evaporation etc. in support film.Thus, dicing/die bonding film 10 of the present invention can effectively be manufactured.
The thickness of adhesive phase 2 is not particularly limited, and from preventing the defect in chip cutting face and keeping the viewpoints such as the fixing property taken into account of adhesive layer to consider, is preferably about 1 μm ~ about 50 μm.Preferably 2 μm ~ 30 μm, more preferably 5 μm ~ 25 μm.
Described die bonding film 3, as long as containing adhesive compound with containing fine-grained packing material, and sets its thickness as Y(μm), set the maximum particle diameter of described packing material as X(μm) time, ratio X/Y(-) be less than 1, be then not particularly limited.
As described packing material, inorganic filler and organic filler can be enumerated.Consider from viewpoints such as raising operability and thermal conductivity, adjustment melt viscosity and imparting thixotropy, preferred inorganic filler.
As described inorganic filler, be not particularly limited, can enumerate such as: silicon dioxide, aluminium hydroxide, calcium hydroxide, magnesium hydroxide, antimonous oxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesium oxide, aluminium oxide, aluminium nitride, aluminium borate, boron nitride, crystalline silica, amorphous silica etc.These inorganic fillers may be used singly or two or more in combination.From the viewpoint of raising thermal conductivity, preferential oxidation aluminium, aluminium nitride, boron nitride, crystalline silica, amorphous silica etc.In addition, from the viewpoint of the balance of the adhesivity with die bonding film 3, preferred silicon dioxide.In addition, as described organic filler, polyimides, polyamidoimide, polyether-ether-ketone, Polyetherimide, polyesterimide, nylon, polysiloxanes etc. can be enumerated.These organic fillers may be used singly or two or more in combination.
The maximum particle diameter X(μm of described packing material) be preferably 0.05 ~ 5 μm, more preferably 0.05 ~ 3 μm.By the maximum particle diameter of packing material is set as more than 0.05 μm, the wetability to adherend can be improved, the decline of adhesivity can be suppressed.On the other hand, by described maximum particle diameter is set as less than 5 μm, can prevents packing material from giving prominence to from the surface of die bonding film 3, can reduce, when chip join, excessive stress be applied partly to semiconductor chip.In addition, in the present invention, the packing material that average grain diameter is mutually different can be combinationally used.In addition, the maximum particle diameter of packing material is the value obtained by such as luminosity formula particle size distribution meter (HORIBA manufactures, device name: LA-910).
The shape of described packing material is not particularly limited, and such as, can use spherical, axiolitic packing material.
The content of described packing material relative to described adhesive compound 100 weight portion preferably in the scope of 1 ~ 80 weight portion, more preferably in the scope of 1 ~ 50 weight portion.By described content is set as more than 1 weight portion, the wetability to adherend can be improved, the decline of adhesivity can be suppressed.On the other hand, by described content is set as below 80 weight portions, can prevents packing material from giving prominence to from the surface of die bonding film 3, can reduce, when chip join, excessive stress be applied partly to semiconductor chip.
In addition, described packing material relative to described adhesive compound 100 parts by volume preferably in the scope of 1 ~ 40 parts by volume, more preferably in the scope of 1 ~ 30 parts by volume.By described content is set as more than 1 parts by volume, the wetability to adherend can be improved, the decline of adhesivity can be suppressed.On the other hand, by described content is set as below 80 parts by volume, can prevents packing material from giving prominence to from the surface of die bonding film 3, can reduce, when chip join, excessive stress be applied partly to semiconductor chip.
In addition, the thickness Y(μm of die bonding film 3) (being gross thickness when duplexer) be not particularly limited, such as preferred in the scope of 1 ~ 5 μm, more preferably in the scope of 2 ~ 4 μm.By by described thickness Y(μm) be set as more than 1 μm, the wetability to adherend can be improved, the decline of adhesivity can be suppressed.On the other hand, by by described thickness Y(μm) be set as less than 5 μm, can prevent packing material from giving prominence to from the surface of die bonding film 3, can reduce, when chip join, excessive stress be applied partly to semiconductor chip.
The maximum profile height Rt of the roughness curve of die bonding film 3 preferably in the scope of 0.1 ~ 2.3 μm, more preferably in the scope of 1 ~ 1.5 μm.By described maximum profile height Rt is set as more than 0.1 μm, can easily pick up.On the other hand, by described maximum profile height Rt is set as less than 2.3 μm, can reduces and exceedingly apply local stress.In addition, the maximum profile height Rt of described roughness curve is according to JISB0601, uses non-contact surface roughness measuring instrument (Japanese PVC one コ company manufactures, WYKO), the value measured after carrying out the gradient correction on surface.
Be not particularly limited as described adhesive compound, such as, the adhesive compound preferably containing epoxy resin, phenolic resins and acrylic copolymer.
Described epoxy resin, as long as the epoxy resin used usually used as adhesive compound is then not particularly limited, can use such as: bifunctional epoxy resin or the epoxy resin such as polyfunctional epoxy resin or hydantoins type, triglycidyl isocyanurate type or glycidic amine type such as bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolak type, ortho cresol novolak type, three (hydroxyphenyl) methane type, four (hydroxyphenyl) ethane type.These epoxy resin may be used singly or two or more in combination.In these epoxy resin, particularly preferably there is the epoxy resin of the aromatic rings such as phenyl ring, cyclohexyl biphenyl and naphthalene nucleus in the present invention.Specifically, can enumerate such as: phenolic resin varnish type epoxy resin, the phenolic resin varnish type epoxy resin containing phenylenedimethylidyne skeleton, the phenolic resin varnish type epoxy resin containing biphenyl backbone, bisphenol A type epoxy resin, bisphenol f type epoxy resin, tetramethyl bisphenol-type epoxy resin, triphenylmethane type epoxy resin, naphthalene type epoxy resin etc.These epoxy resin, good with the reactivity of the phenolic resins as curing agent, and thermal endurances etc. are excellent.In addition, in epoxy resin, the content of the ionic impurity etc. of corrosion resistant semiconductor element is few.
The weight average molecular weight of described epoxy resin preferably in the scope of 300 ~ 1500, more preferably in the scope of 350 ~ 1000.Weight average molecular weight lower than 300 time, the mechanical strength of the die bonding film 3 sometimes after hot curing, thermal endurance, moisture-proof decline.On the other hand, during more than 1500, the die bonding film sometimes after hot curing becomes firm thus becomes fragile.In addition, the weight average molecular weight in the present invention refers to the polystyrene conversion value utilizing gel permeation chromatography (GPC) to use standard polystyrene calibration curve to obtain.
In addition, described phenolic resins works as the curing agent of described epoxy resin, can enumerate such as: the polycarboxylated styrenes etc. such as the novolak phenolics such as phenol resol resins, phenol biphenyl resin, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin, nonyl phenol novolac resin, resol-type phenolic resin, poly(4-hydroxystyrene).These phenolic resins may be used singly or two or more in combination.Preferred phenol resol resins, phenol aralkyl resin in these phenolic resins.This is because the connection reliability of semiconductor device can be improved.
The weight average molecular weight of described phenolic resins preferably in the scope of 300 ~ 1500, more preferably in the scope of 350 ~ 1000.Weight average molecular weight lower than 300 time, the hot curing of described epoxy resin is insufficient, sometimes can not obtain sufficient toughness.On the other hand, when weight average molecular weight is more than 1500, become high viscosity, workability when die bonding film makes sometimes declines.
The mixing ratio of described epoxy resin and phenolic resins, such as, with relative to epoxy radicals 1 equivalent in described epoxy resin ingredient, the hydroxyl in phenolic resins is that the mode of 0.5 ~ 2.0 equivalent carries out coordinating is suitable.More suitably 0.8 ~ 1.2 equivalent.That is, this is because: if both mixing ratios are beyond described scope, then curing reaction can not fully carry out, and the characteristic of epoxy resin cured product is easily deteriorated.
In addition, the combined amount of described epoxy resin and phenolic resins relative to acrylic copolymer 100 weight portion preferably in the scope of 10 ~ 200 weight portions.
As described acrylic copolymer, be not particularly limited, preferably contain carboxy acrylic analog copolymer in the present invention, containing epoxy radicals acrylic copolymer.The described monomer containing using in carboxy acrylic analog copolymer, can enumerate acrylic or methacrylic acid.The content of acrylic or methacrylic acid regulates to make the mode of acid number in the scope of 1 ~ 4.All the other can use methyl acrylate, methyl methacrylate etc. to have the mixture of the alkyl acrylate of the alkyl of carbon number 1 ~ 8, alkyl methacrylate, styrene or acrylonitrile etc.In these materials, particularly preferably (methyl) ethyl acrylate and/or (methyl) butyl acrylate.Blending ratio is preferably considered the glass transition point (Tg) of described acrylic copolymer described later and regulates.In addition, as polymerization, be not particularly limited, the existing known methods such as such as solution polymerization process, mass polymerization, suspension polymerization, emulsion polymerization can be adopted.
In addition, as being not particularly limited with other monomer component of described monomer component copolymerization, can enumerate such as: acrylonitrile etc.The use amount of these copolymerisable monomer compositions, relative to whole monomer component preferably in the scope of 1 ~ 20 % by weight.By containing other monomer component in this number range, cohesiveness, adhesivity etc. can be improved.
As the polymerization of acrylic copolymer, be not particularly limited, the existing known methods such as such as solution polymerization process, mass polymerization, suspension polymerization, emulsion polymerization can be adopted.
The glass transition point (Tg) of described acrylic copolymer is preferably-30 ~ 30 DEG C, more preferably-20 ~ 15 DEG C.By glass transition point is set as more than-30 DEG C, thermal endurance can be guaranteed.On the other hand, by being set as less than 30 DEG C, the preventing effectiveness that the chip after the cutting of the wafer that surface state is coarse disperses improves.
The weight average molecular weight of described acrylic copolymer is preferably 100,000 ~ 1,000,000, and more preferably 350,000 ~ 900,000.By weight average molecular weight is set as more than 100,000, excellent to the adhesivity on adherend surface during high temperature, and can thermal endurance be improved.On the other hand, by weight average molecular weight is set as less than 1,000,000, can easily be dissolved in organic solvent.
In addition, in die bonding film 3,3 ', can suitably coordinate other additive as required.As other additive, can enumerate such as: fire retardant, silane coupler or ion trap agent etc.
As described fire retardant, can enumerate such as: antimonous oxide, antimony pentoxide, brominated epoxy resin etc.These fire retardants may be used singly or two or more in combination.
As described silane coupler, can enumerate such as: β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc.These compounds may be used singly or two or more in combination.
As described ion trap agent, can enumerate such as: hydrotalcite, bismuth hydroxide etc.These ion trap agent may be used singly or two or more in combination.
As the thermal curing accelerator of described epoxy resin and phenolic resins, be not particularly limited, can enumerate such as: the salt comprising any one skeletons such as triphenylphosphine skeleton, amine skeleton, triphenylborane skeleton, three halogen borine skeletons.
In addition, die bonding film 3 such as can have the structure be only made up of adhesive layer individual layer.In addition, also can be appropriately combined by thermosetting resins different to thermoplastic resins different for glass transition temperature, heat curing temperature, form two-layer above sandwich construction.In addition, cut water owing to using in the cutting action of semiconductor wafer, therefore, die bonding film 3 moisture absorption sometimes and reach the moisture content of more than normality.If be adhesive under the state of such high-moisture percentage on substrate etc., then can be trapped in gluing interface at Post RDBMS stage water vapour, thus sometimes produced warpage.Therefore, as die bonding film, by forming the structure of being clamped high poisture-penetrability core by adhesive layer, can be spread by film at Post RDBMS stage water vapour, thus described problem can be avoided.Consider from this viewpoint, die bonding film 3 can adopt the sandwich construction forming adhesive layer at the single or double of core.
As described core, can enumerate: film (such as polyimide film, polyester film, pet film, PEN film, polycarbonate film etc.), resin substrates, minute surface silicon wafer, silicon substrate or the glass substrate etc. that strengthen with glass fibre or plastics non-woven fibre.
In addition, die bonding film 3 is preferably protected by partition (not shown).Partition has the function as the protective material of protect IC bonding film before the actual use of supply.In addition, partition can also use as support base material when being transferred to by die bonding film 3,3 ' on cutting film.Partition is peeled off when being pasted on die bonding film by workpiece.As partition, PETG (PET), polyethylene, polypropylene can be used or utilize the remover such as fluorine-containing remover, chain alkyl esters of acrylic acid remover to carry out plastic film or the paper etc. of surface coating.
(manufacture method of semiconductor device)
Dicing/die bonding film 10,12 of the present invention, uses in the following manner after suitably being peeled off by the partition in the upper setting arbitrarily of die bonding film 3,3 '.Below, be described to use the situation of dicing/die bonding film 10 with reference to accompanying drawing.
First, as shown in Figure 1, semiconductor wafer 4 is crimped on the semiconductor wafer adhesive portion 3a of the die bonding film 3 in dicing/die bonding film 10, and makes its gluing maintenance and fix (installation procedure).This operation utilizes the extruding means extruding such as crimping roller to carry out.
Then, the cutting of semiconductor wafer 4 is carried out.Thus, semiconductor wafer 4 is cut into preliminary dimension and panelization, makes semiconductor chip 5.Cutting is such as conventionally carried out from the circuit face side of semiconductor wafer 4.In addition, in this operation, such as, cutting mode etc. that be cut into dicing/die bonding film 10, that be called full cutting can be adopted.The cutter sweep used in this operation is not particularly limited, and can adopt existing known cutter sweep.In addition, semiconductor wafer is gluing fixing by dicing/die bonding film 10, chip defect or chip therefore can be suppressed to disperse, and can suppress the breakage of semiconductor wafer 4.
In order to peel off by the gluing fixing semiconductor chip of dicing/die bonding film 10, carry out the pickup of semiconductor chip 5.Pick-up method is not particularly limited, and can adopt existing known various method.Such as, can enumerate: with pin, each semiconductor chip 5 is pushed away from dicing/die bonding film 10 side, utilize pick device to pick up the method etc. of the semiconductor chip 5 above pushed away.
At this, because adhesive phase 2 is ultraviolet hardening, therefore, pick up after to this adhesive phase 2 irradiation ultraviolet radiation.Thus, the bonding force of adhesive phase 2 couples of die bonding film 3a declines, and semiconductor chip 5 is easily peeled off.As a result, can pick up when not damaging semiconductor chip.The conditions such as exposure intensity during Ultraviolet radiation, irradiation time are not particularly limited, and can suitably set as required.In addition, as the light source used during Ultraviolet radiation, aforesaid light source can be used.
The semiconductor chip 5 of pickup is fixed to (chip join) on adherend 6 by die bonding film is gluing.Chip join temperature now preferably in the scope of 100 ~ 180 DEG C, more preferably in the scope of 100 ~ 160 DEG C.In addition, chip join pressure preferably in the scope of 0.05 ~ 0.5MPa, more preferably in the scope of 0.05 ~ 0.2MPa.In addition, the chip join time preferably in the scope of 0.1 ~ 5 second, more preferably in the scope of 0.1 ~ 3 second.Even if carry out chip join in such a situa-tion, the present application also can be reduced by packing material contained in die bonding film and make stress concentration of local in semiconductor chip 5, therefore effectively can prevent the breakage of semiconductor chip 5.
As adherend 6, the semiconductor chip etc. lead frame, TAB film, substrate can enumerated or make in addition.Adherend 6 can be such as hold yielding deformation type adherend, also can be the non-deformed type adherend (semiconductor wafer etc.) being difficult to be out of shape.As described substrate, existing known substrate can be used.In addition, described lead frame can use the die-attach area such as Cu lead frame, 42 alloy lead wire frames or comprise glass epoxide, BT(bismaleimide-triazine), the RF magnetron sputtering of polyimides etc.But, the present invention is not limited thereto, also comprise and semiconductor element is installed and is electrically connected rear operable circuitry substrate with semiconductor element.
Die bonding film 3 of the present invention is heat curing-type, therefore, can be adhesively fixed by semiconductor chip 5 and to fix on adherend 6, and high-temperature capability is improved by being heating and curing.In addition, be fixed to the upper and object that obtains such as substrate by semiconductor wafer adhesive portion 3a by gluing for semiconductor chip 5, can be used for reflow soldering operation.
In addition, described chip join also can not make bonding film 3 solidify and only it be temporarily fixed on adherend 6.Then, also when carrying out wire bond without when heating process, then with sealing resin, semiconductor chip can be sealed, then sealing resin is carried out Post RDBMS.
Now, as die bonding film 3, clipping viscous force when using temporarily fixing relative to adherend 6 be more than 0.2MPa, die bonding film more preferably within the scope of 0.2 ~ 10MPa.The clipping viscous force of die bonding film 3 be at least more than 0.2MPa time, even if carry out wire bond operation without heating process, also detrusion can not be produced because of the ultrasonic vibration in this operation or heating on the gluing surface of die bonding film 3 and semiconductor chip 5 or adherend 6.That is, semiconductor element can not be movable because of ultrasonic vibration during wire bond, thus, can prevent the success rate of wire bond from declining.
Described wire bond is the operation (with reference to figure 3) utilizing bonding wire 7 to be electrically connected with the electrode pad (not shown) on semiconductor chip by the end of the portion of terminal (inner lead) of adherend 6.As described bonding wire 7, can use such as: gold thread, aluminum steel or copper cash etc.Temperature when carrying out wire bond is carried out in the scope of 80 ~ 250 DEG C, preferably 80 ~ 220 DEG C.In addition, carry out several seconds ~ a few minutes its heating time.Connection is being heated under the state in described temperature range, by combinationally use ultrasonic vibration can and applied pressure and the crimping that produces can carry out.
This operation can be carried out when not making the complete hot curing of die bonding film 3a.In addition, in the process of this operation, semiconductor chip 5 can not be fixed by die bonding film 3a with adherend 6.
Described sealing process is the operation (with reference to figure 3) utilizing sealing resin 8 to be sealed by semiconductor chip 5.This operation is mounted in semiconductor chip 5 on adherend 6 or bonding wire 7 carries out to protect.This operation is by carrying out with the resin forming of mould by sealing.As sealing resin 8, such as, epoxylite can be used.Heating-up temperature during resin seal is generally 175 DEG C, and carries out 60 ~ 90 seconds, but, the present invention is not limited thereto, such as, also can solidify a few minutes at 165 ~ 185 DEG C.Thus, by die bonding film 3a, semiconductor chip 5 and adherend 6 are fixed while making sealing resin solidify.That is, in the present invention, even if when not carrying out Post RDBMS operation described later, die bonding film 3a in this operation, also can be utilized to be fixed, thus the manufacturing time reducing worker ordinal number and shortening semiconductor device can be contributed to.
In described Post RDBMS operation, make in aforementioned seal operation, solidify not enough sealing resin 8 and solidify completely.Even if unfixing by die bonding film 3a in sealing process, also can be fixed by die bonding film 3a while the solidification of sealing resin 8 in this operation.Heating-up temperature in this operation is different because of the kind of sealing resin, and such as, in the scope of 165 ~ 185 DEG C, heating time is about 0.5 hour ~ about 8 hours.
In addition, dicing/die bonding film of the present invention, as shown in Figure 4, also can be suitable for carrying out three-dimensional situation of installing by stacked for multiple semiconductor chip.Fig. 4 is the generalized section of the example represented by the three-dimensional mounting semiconductor chip of die bonding film.When three-dimensional shown in Fig. 4 is installed, first, at least one die bonding film 3a be cut into semiconductor chip same size is temporarily fixed on adherend 6, then by die bonding film 3a, semiconductor chip 5 is temporarily fixed in the mode that its wire bond face is upside.Then, die bonding film 13 is temporarily fixed by the electrode pad portion avoiding semiconductor chip 5.In addition, another semiconductor chip 15 is temporarily fixed on die bonding film 13 in the mode that its wire bond face is upside.
Then, wire bond operation is carried out when not carrying out heating process.Thus, bonding wire 7 is utilized to be electrically connected with adherend 6 by the respective electrode pad in semiconductor chip 5 and another semiconductor chip 15.Then, carry out the sealing process utilizing sealing resin 8 semiconductor chip 5 grade to be sealed, and sealing resin is solidified.Meanwhile, utilize die bonding film 3a by fixing between adherend 6 and semiconductor chip 5.In addition, also utilize die bonding film 13 by fixing between semiconductor chip 5 and another semiconductor chip 15.In addition, after sealing process, Post RDBMS operation can be carried out.
Even if when semiconductor chip three-dimensional install, do not carry out yet die bonding film 3a, 13 utilization heating heat treated, therefore can simplify manufacturing process and improve rate of finished products.In addition, can not there is warpage in adherend 6, and semiconductor chip 5 and another semiconductor chip 15 also can not crack, therefore, it is possible to realize the further slimming of semiconductor chip 5.
In addition, as shown in Figure 5, can carry out being installed by the three-dimensional of die bonding film stacked partition between semiconductor chip.Now, on adherend 6, first stack gradually die bonding film 3a, semiconductor chip 5 and die bonding film 21 and temporarily fix.Then, bonding film 21 stack gradually partition 9, die bonding film 21, die bonding film 3a and semiconductor chip 5 and temporarily fix.Then, do not carry out heating process and carry out wire bond operation as shown in Figure 5.Thus, with bonding wire 7, the electrode pad on semiconductor chip 5 is electrically connected with adherend 6.
Then, carry out the sealing process utilizing sealing resin 8 to be sealed by semiconductor chip 5, sealing resin 8 is solidified, utilize die bonding film 3a, 21 to fix between adherend 6 and semiconductor chip 5 and between semiconductor chip 5 and partition 9 simultaneously.Thus, semiconductor packages can be obtained.Sealing process is preferably only by the disposable Sealing Method of semiconductor chip 5 side single facer.Sealing is carried out to protect the semiconductor chip 5 be pasted onto on bonding sheet, and it represents method is use sealing resin 8 shaping in a mold.Now, generally use the mould be made up of the mold and bed die with multiple die cavity, carry out sealing process simultaneously.Heating-up temperature during resin seal is such as preferred in the scope of 170 ~ 180 DEG C.After sealing process, Post RDBMS operation can be carried out.In addition, be not particularly limited as described partition 9, such as, existing known silicon chip, polyimide film etc. can be used.In addition, described partition can use the core such as polyimide film, resin substrates.
Then, the semiconductor packages described in the installation of printed wiring board upper surface.Method of surface mounting can be enumerated such as: after supplying solder on a printed circuit in advance, carried out the reflow soldering of welding by heating and meltings such as hot blasts.Heating means can enumerate hot air reflux, infrared ray backflow etc.In addition, can be that entirety heats, the any-mode of localized heating.Heating-up temperature is preferably in the scope of 240 ~ 260 DEG C, and heating time is preferably in the scope of 1 ~ 20 second.
(other item)
Three-dimensional when semiconductor element is installed on described substrate etc., be formed with buffering film in the side of the formation circuit of semiconductor element.As this buffering film, can enumerate such as: silicon nitride film or comprise the film of the heat stable resins such as polyimide resin.
In addition, when the three-dimensional of semiconductor element is installed, the die bonding film used in each section is not limited to the die bonding film comprising same composition, suitably can change according to manufacturing condition, purposes etc.
In addition, in the foregoing embodiment, for being illustrated multiple semiconductor element being laminated to the mode of carrying out wire bond operation after on substrate etc. once, but, the present invention is not limited thereto.Such as, also whenever semiconductor element being laminated to substrate etc. and going up, all wire bond operation can be carried out.
Embodiment
Below, exemplary detailed description is carried out to the preferred embodiments of the present invention, but scope of the present invention, as long as no the record be particularly limited to, is just only defined in this by the material recorded in this embodiment or use level etc. unintentionally.In addition, when to mention part, weight portion is referred to.
(embodiment 1)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, acrylic copolymer (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufacture, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system, trade name as packing material; SO-E2, maximum particle diameter 1.4 μm, average grain diameter 0.5 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film A of thickness 5 μm is made.
(embodiment 2)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, acrylic copolymer (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufacture, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system, trade name as packing material; SO-E2, maximum particle diameter 1.4 μm, average grain diameter 0.5 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film B of thickness 5 μm is made.
(embodiment 3)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 12 weight portions, acrylic copolymer (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufacture, trade name: レ PVC タ Le AR31) 36 weight portions, spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system, trade name as packing material; SO-E2, maximum particle diameter 1.4 μm, average grain diameter 0.5 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film C of thickness 3 μm is made.
(embodiment 4)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, acrylic copolymer (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufacture, trade name: レ PVC タ Le AR31) 12 weight portions, spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system, trade name as packing material; SO-E2, maximum particle diameter 1.4 μm, average grain diameter 0.5 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film D of thickness 3 μm is made.
(embodiment 5)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E3, maximum particle diameter 5.0 μm, average grain diameter 0.9 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film E of thickness 5 μm is made.
(embodiment 6)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E3, maximum particle diameter 5.0 μm, average grain diameter 0.9 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film F of thickness 5 μm is made.
(comparative example 1)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E3, maximum particle diameter 5.0 μm, average grain diameter 0.9 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film G of thickness 3 μm is made.
(comparative example 2)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E3, maximum particle diameter 5.0 μm, average grain diameter 0.9 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film H of thickness 3 μm is made.
(comparative example 3)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E5, maximum particle diameter 8.0 μm, average grain diameter 1.3 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film I of thickness 5 μm is made.
(comparative example 4)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E5, maximum particle diameter 8.0 μm, average grain diameter 1.3 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film J of thickness 5 μm is made.
(comparative example 5)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 12 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 12 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 36 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E5, maximum particle diameter 8.0 μm, average grain diameter 1.3 μm) 40 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film K of thickness 3 μm is made.
(comparative example 6)
By three hydroxyphenyl methane type epoxy resin, (Nippon Kayaku K. K manufactures, trade name: EPPN-501HY) 4 weight portions, phenylenedimethylidyne novolak phenolics (bright and change into Co., Ltd. manufacture, trade name: MEH7800H) 4 weight portions, (ノ ガ ワ ケ ミ カ Le Co., Ltd. manufactures acrylic copolymer, trade name: レ PVC タ Le AR31) 12 weight portions, as spherical silicon dioxide (ア De マ テ ツク ス Co., Ltd. system of packing material, trade name: SO-E5, maximum particle diameter 8.0 μm, average grain diameter 1.3 μm) 80 weight portions are dissolved in methylethylketone, the adhesive compound of preparation concentration 15.0 % by weight.
Using the solution coat of this adhesive compound to as release liner, on demoulding process film that the pet film of thickness 38 μm after polysiloxanes demoulding process is formed, then 130 DEG C of dryings 2 minutes.Thus, the thermosetting die bonding film L of thickness 3 μm is made.
(average grain diameter of packing material and the mensuration of maximum particle diameter)
The average grain diameter of packing material and the mensuration of maximum particle diameter use the particle size distribution meter of luminosity formula (HORIBA manufactures, device name: LA-910) to carry out.Result is as shown in following table 1 and table 2.In addition, about maximum particle diameter, representing particle diameter with transverse axis, representing with the longitudinal axis in the two-dimensional diagram of relative particle weight, if when the area surrounded by baseline and this curve is 100%, this area is accumulated in the side little from particle diameter and the cumulative area obtained reaches 100% time particle diameter as maximum particle diameter.
(the maximum profile height Rt of roughness curve)
The maximum profile height Rt of the roughness curve of the thermosetting die bonding film made in each embodiment and comparative example, according to JISB0601, use non-contact surface roughness measuring instrument (Japanese PVC one コ company manufactures, WYKO), measure after carrying out the gradient correction on surface.Result is as shown in following table 1 and table 2.
(semiconductor wafer is with or without the confirmation of breakage)
First, cutting film is made.That is, thickness 100 μm comprise the solution that polyolefinic base material is coated with acrylic pressure-sensitive adhesive compositions and dry, form the adhesive phase of thickness 10 μm, thus made cutting film.
In addition, the solution of described acrylic adhesives is prepared in the following manner.That is, first by butyl acrylate, ethyl acrylate, 2-Hydroxy ethyl acrylate and acrylic acid with the ratio copolymerization of 60/40/4/1, obtain weight average molecular weight 800, the acrylic polymer of 000.Then, in this acrylic polymer 100 weight portion, coordinate multi-functional epoxy's class crosslinking agent 0.5 weight portion, dipentaerythritol monohydroxypentaacrylate 90 weight portion as photopolymerizable compound, Alpha-hydroxy cyclohexyl-phenyl ketone 5 weight portion as Photoepolymerizationinitiater initiater as crosslinking agent, they are dissolved into as in the toluene of organic solvent.Thus, the solution of described acrylic adhesives is made.
Then, the thermosetting die bonding film on demoulding process film is pasted on the adhesive phase of described cutting film.Stickup condition is, laminating temperature 40 DEG C, line pressure 5kgf/cm.Thus, the dicing/die bonding film of the thermosetting die bonding film with each embodiment and comparative example has been made.
Then, semiconductor wafer (diameter 12 inches, thickness 50 μm) is installed on the thermosetting die bonding film of each dicing/die bonding film.Mounting condition is as described below.
[stickup condition]
Sticker: the day smart machine manufacture in east, MA-3000III
Labeling rates: 10mm/ second
Application pressing force: 0.25MPa
Platform temperature during stickup: 40 DEG C
Then, carry out the cutting of semiconductor wafer, form the semiconductor chip of each chip size 5mm.Cutting condition is as described below.
[cutting condition]
Cutter sweep: デ イ ス コ company manufactures, DFD-6361
Cut ring: 2-8-1(デ イ ス コ company manufactures)
Cutting speed: 80mm/ second
Cutting blade: the 2050HEDD that デ イ ス コ company manufactures
Cutting blade rotating speed: 40,000rpm
Blade height: 0.170mm
Cutting mode: A pattern/staged cutting
In addition, each dicing/die bonding film is drawn, carry out making each chip chamber to be the expansion operation of predetermined distance.Then, in the mode pushed away from the base material side pin of each dicing/die bonding film, die bonding film is picked up together with semiconductor chip.Pickup conditions is as described below.
[pickup conditions]
Pin: total length 10mm, diameter 0.7mm, acute angle 15 degree, front end R350 μm
Pin number: 5
Pushing volume on pin: 350 μm
Pin pushes away speed: 5mm/ second
Chuck (the コ レ Star ト) retention time: 200 milliseconds
Expansion: 3mm
Then, by pickup semiconductor chip chip join on lead frame.Confirm the breakage of semiconductor chip now.Result is as shown in following table 1 and table 2.In addition, chip join condition is as described below.
[chip join condition]
Chip join temperature: 120 DEG C
Chip join pressure: 0.1MPa
The chip join time: 1 second
Post RDBMS: at 150 DEG C 1 hour
(result)
As shown in following table 1 and table 2, its thickness Y(μm the thermosetting die bonding film resembling various embodiments of the present invention) be X(μm with the maximum particle diameter of packing material) ratio X/Y(-) when being less than 1, can when not making semiconductor chip breakage chip join on lead frame.On the other hand, during thermosetting die bonding film for each comparative example of ratio X/Y more than 1, when confirming chip join, semiconductor chip produces damaged.
Table 1
Table 2

Claims (5)

1. a thermosetting die bonding film, containing adhesive compound and the packing material comprising particulate, wherein,
If the thickness of described thermosetting die bonding film is Y (μm), when setting the maximum particle diameter of described packing material as X (μm), ratio X/Y (-) is less than 1,
Described X (μm) in the scope of 0.05 ~ 5 μm,
The content of described packing material relative to described adhesive compound 100 weight portion in the scope of 1 ~ 80 weight portion,
The content of described packing material relative to described adhesive compound 100 parts by volume in the scope of 1 ~ 40 parts by volume.
2. thermosetting die bonding film as claimed in claim 1, wherein,
Described Y (μm) is in the scope of 1 ~ 5 μm.
3. thermosetting die bonding film as claimed in claim 1, wherein,
The maximum profile height Rt of the roughness curve of described thermosetting die bonding film is in the scope of 0.1 ~ 2.3 μm.
4. a dicing/die bonding film, is characterized in that, stacked thermosetting die bonding film of having the right according to any one of requirement 1 to 3 on cutting film.
5. a manufacture method for semiconductor device, use the dicing/die bonding film described in claim 4 to manufacture semiconductor device, described method comprises following operation:
With described thermosetting die bonding film for sticking veneer, paste the adhering processes of described dicing/die bonding film at the back side of semiconductor wafer,
Described semiconductor wafer is cut together with described thermosetting die bonding film and forms the cutting action of semiconductor chip,
By described semiconductor chip together with described thermosetting die bonding film from the pickup process that described dicing/die bonding film picks up, and
By described thermosetting die bonding film, under the condition in temperature 100 ~ 180 DEG C, activating pressure 0.05 ~ 0.5MPa, the engaging time scope of 0.1 ~ 5 second, by described semiconductor chip chip join to the chip join operation on adherend.
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