TW201200575A - Thermoset die-bonding film, dicing, bonding film, and method of fabricating semiconductor apparatus - Google Patents

Thermoset die-bonding film, dicing, bonding film, and method of fabricating semiconductor apparatus Download PDF

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Publication number
TW201200575A
TW201200575A TW100119872A TW100119872A TW201200575A TW 201200575 A TW201200575 A TW 201200575A TW 100119872 A TW100119872 A TW 100119872A TW 100119872 A TW100119872 A TW 100119872A TW 201200575 A TW201200575 A TW 201200575A
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Taiwan
Prior art keywords
bonding film
wafer bonding
wafer
film
weight
Prior art date
Application number
TW100119872A
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Chinese (zh)
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TWI439530B (en
Inventor
Koichi Inoue
Yuki Sugo
Sadahito Misumi
Takeshi Matsumura
Naohide Takamoto
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Nitto Denko Corp
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Publication of TW201200575A publication Critical patent/TW201200575A/en
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Publication of TWI439530B publication Critical patent/TWI439530B/en

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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)

Abstract

A thermoset die-bonding film and a dicing die-bonding film having the same are provided, wherein when a semiconductor chip is die-bonded onto a target object through the thermoset die-bonding film, a local stress applied to the semiconductor chip is prevented through a filling material, and thus the damage to the semiconductor chip can be decreased. The thermoset die-bonding film of the present invention contains an adhesive composition and a filling material including fine particles. When the thickness of the thermoset die-bonding film is set as Y ( μ m) and the maximum particle size of the filling material is set as X ( μ m), the ratio X/Y is 1 or less.

Description

201200575 六'發明說明： 【發明所屬之技術領域】 本發明是有關於一種在將例如半導體晶片（chip)等 半導體元件接著固定至基板或引線框（lead frame)等被黏 體上時所使用的熱固型晶片接合膜（die bonding film)。 另外’本發明是有關於上述熱固型晶片接合膜與切割膜 (dicing film)積層而成的切割晶片接合膜（dicing.bonding film)。進而本發明是有關於使用上述切割晶片接合膜的 半導體裝置的製造方法。 【先前技術】 以往 在午導體裝置的製造過程中，在引線框和電箱 構件固著半導體晶片時採用銀膠。上述固著處理是在引韓 框的晶片墊（die pad)等上塗布膠狀接著劑，在其上搭# 半導體晶片並使膠狀接著劑層固化來進行。 曰但是，膠狀接著劑由於其黏度行為或劣化等而在塗布 等方面產生大的不均。結果’所形成的勝狀 度變，均勻，而造成半導體晶片的固著強度缺 罪 17，膠狀接著劑的塗布量不足時半導體曰#盥 間，強度降低，造成在 (wire bonchng)步驟中半導 ==量r嫩，心導體= 問題，〈率何祕下降。此细著處理中的 進仃綠接著_塗布量的控制，而給作業性ΐ 4 201200575 生產性帶來問題。 在上述膠狀接著劑的塗布步驟中，有將膠狀接著劑另 外塗布到引線框或形成的晶片上的方法。但是，在上述方 法中’膠狀接著劑層難以均勻化’另外膠狀接著劑的塗布 需要特殊裝置和長時間。因此，已提出了在切割步驟中接 著保持半導體晶片、並且還賦予在安裝步驟中所需的晶片 固著用之接著劑層的切割晶片接合膜（例如，參考專利文 獻1)。 該切割晶片接合膜在支撐基材上以可剝離接著劑層的 方式設置*成’在該接㈣層的保持下對半導體晶圓進 切割後’拉伸支撐基材^將半導體晶片連同接著劑層 剝離’將其個別回收’並通過難著㈣崎至引線 被黏體。 自熱傳導性、溶融黏度的調整、賦予觸變 (=她_)的觀點而言，下述專利文獻2中揭露了一 接者劑層中添加無機填料等的切割晶片接合膜。 如nr 上述專歡獻2所記載的蝴晶#接合膜具有 旦於\!題巧’以魏體為代表的半導體裝置隨著高容 經薄層化的半導體晶片積層成多段的半導體 == 加上對半導體封裝本身的厚度亦加： 半導體B 接合膜的薄層化。基於上述的背景， +導體曰曰圓或將其個片化的半 且脆弱。因此，將半導*曰m曰^㈣械強度非节低 (脱b〇nding)至St，，片接合膜來晶片接合 被謂上時，存在半導體晶片破損的問 201200575 題 作為上述半導體晶片破損的原因可列舉晶片接合膜中 =的無機填料等填充材料的調配不上= ί為不適當的大小’且其含有量亦不適當 料使;力二w 1時所施加的晶片接合壓力’通過填充材 中於半導體晶片，結果導致半導體晶 片的破損。 先行技術文獻 專利文獻 專利文獻1:日本專利特開昭6〇_57642號公報 t#Sif2^__2〇()8-88411 號公報 於前述問題㈣出，其目的在於通過熱固型 r㈣σ、將半導體晶片晶片接合於被紐上時，通過填 供對上述半導體晶片施加局雜的應力，藉此提 、二m夕半導體晶片的破損的熱_晶片接合膜及具有上 型晶片接合臈的切割晶片接合膜。另外本發明亦提 -上述切割晶片接合膜的半導體裝置的製造方法。 本發明人等為了解決前述現有問題，對熱固型晶片接 i道触ΐ有上述熱固型晶片接合膜的切割晶片接合膜以及 下述方法進行了研究。結果發現’藉由採用 顿成可達成上述目的，並且完成本發明。 出私即’有關本發明的熱固型晶片接合膜是含有接著劑組 以及包含微粒子的填充材料的熱固型晶片接合膜，其 6 201200575 中將上述熱固型晶片接合膜的厚度設為γ(μπι)，且將上述 填充材料的最大粒徑設為χ(μιη)時的比值又/¥(_)為丨以下。 根據上述構成，藉由使熱固型晶片接合膜的厚度Υ(μηι) 與填充材料的最大粒徑χ(μηι)之間的關係為χ/γ$丨，通過 晶片接合膜將半導體晶片晶片接合於被黏體上時，通過填 充f料來減少對半導體晶片局部性的應力集中。藉此，即 使半導體晶片薄型化，亦可減少上述半導體晶片的破損且 可完成半導體裝置的製造，進而謀求產出量的提升。 上述構成中，上述Χ(μιη)較佳為在〇 〇5 μιη〜5 μιη的範 圍内。 的範Γ内卜:於上述構成中，上述Υ㈣較佳為在i — 旦進而，上述構成中’相對於上述接著劑組成物觀重 里份，上述填充材料的含有量較佳為在丨重量份〜8〇重量 份的範圍内。 另外，於上述構成中，相對於上述接著劑組成物1〇〇 拉伤，上述填充材料的含有量較佳為在j體積份〜體 積份的範圍内。 外’於上述構成中’上述熱固型晶片接合膜中粗链 度曲線（roughness curve)的最大剖面高度Rt較佳為在〇1 μιη〜2.3 μιη的範圍内。 人趙认卜為了解決上述課題，有關本發明的切割晶片接 。臈於切_上積層有上述所記_熱_接合膜。 為了解決上述課題，有關本發明的半導體裝置的製造 201200575 ίΐί:用=記载的切割晶片接合臈的半導體裝置的 h方法’其包括下述步驟：貼合步雜 =罝的 臈作為貼合面，並於半導體晶圓的背面貼:::曰 割S曰片接合膜，·切割步驟，將上述半導體 ^ ^刀 固型晶片接合膜一起切割 ^述… 晶片==述切割晶片接合膜連同上述熱固型 型=接1膜V及晶片接合步驟，通過上述熱固 L曰片接合膜’在溫度觸。c〜靴接合壓 =PaM).5MPa、接合時間為0.1秒〜5秒的範圍内的條件下， 將上述半導體晶片晶^{接合於彳絲體上。 ^ 上述方法中將半導體晶片晶片接合於被黏體上時， 使用藉由賊_巾的填充㈣以減少應力針於半導體 晶片的熱固型晶片接合膜。因此’即使在上述晶片接合條 件了進行半導體晶&gt;}的晶#接合，亦可減少半導體晶片的、 破知。即’ ^為上述方法，則可減少半導體晶片的破損， 且可提升產出率（throughput)而製造半導體裝置。 本發明藉由上述說明的手段，而得到如下所述的效果。 即，本發明的熱固型晶片接合膜使熱固型晶片接合膜 的厚度Υ(μηι)與填充材料的最大粒徑χ(μιη)之間的關係為 X/YS 1。藉此，將半導體晶片通過熱固型晶片接合膜晶片 接合於被黏體上時，於膜中所含有的填充材料可減少對半 導體晶片施加局部性的應力。其結果得到可減少半導體晶 片的破損’使產出率提升而謀求半導體裝置的製造的效果。 8 201200575 【實施方式】 (切割晶片接合膜） 人膜，對^本發日f的熱固型晶片接合膜（以下稱為“晶片接 膜為例進行如下說明。_ ί/:：!到的切割晶片接合 接合獏的剖面示意圖。匕示施型態的切割晶片 割晶片接合膜的剖面示意圖?表示本實施魏的另一個切 有曰Ϊ11Γ’切割晶片接合膜ig具有在切割膜上積層 :=。切割膜是在基材1上積層黏= 本μ如膜3設置在絲著劑層2上。另外 t】如圖2所不’也可以是僅在工件黏貼部分形成晶片 接合膜3，的構成。 ^*aa^ 上述基材i具有紫外線透射性，並域為切割晶月接 。膜10、11的強度母體。例如可列舉：低密度聚乙烯、直 鏈狀I乙：!#、中密度聚乙婦、高密度聚乙烯、超低密度聚 乙烯、無規共聚聚叫、贿共、均聚丙烯、聚 丁埽、聚甲基戊烯等輯烴、乙埽_乙酸乙稀@旨共聚物、離 聚物樹脂（ionomerresin)、乙烯·（曱基）丙烯酸共聚物、 ^烯(曱基）丙烯酸醋（無規、交替）共聚物、乙烯_丁 烯共聚物、乙烯-己烯共聚物、聚氨酯、聚對苯二曱酸乙二 醇酯、聚萘二曱酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、 聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳族聚醯 ，、聚苯硫醚、芳族聚醯胺（紙）、玻璃、玻璃布、含氟 樹脂、聚氣乙烯、聚偏二氣乙烯、纖維素類樹脂、聚矽氧 201200575 烧樹脂、金屬（箔）、紙等。 另外’作為基材1的材料’可以列舉上述樹脂的交聯 體等聚合物。上述轉薄料叫拉伸而使用，也可以視 =要進行科或雙軸拉伸處观制。根據湘拉伸處理 ^賦予了熱收縮性的樹脂片’藉由在切割後使該基材ι '、、、收縮’可以減小黏著劑層2與晶片接合膜3、3，的接著 面積，從*可謀求半導體晶片的回收的容易化。 為了提高與鄰接層的密合性、保持性等，基材丄 面可以實施慣用的表面處理，例如，鉻酸處理、臭氧暴露、 =焰暴4、冋壓電擊暴露、離子絲射處理等化學或物理 處理、利用底塗劑（例如後述的黏著物質）的塗布處理。 上述基材1可以適當地選擇_或不_類的材料而 ，用’視需要也可以使用將數種材料共混後的材料。另外， 土材中’為了賦予紐i防靜·能，可以在上述基材 ϋί包含金屬、合金、該麵·物等的厚度為約贿〜 1電物㈣蒸騎。基材1可以是單層或者兩 種以上的夕層。 基材1的厚度沒有特別限制，可以適宜決定， 約 5/zm〜約 2〇〇vm。 从6上述黏著劑層2包含紫外線固化型黏著劑而構成。紫 易著劑可以藉由紫外線的照射增大交聯度而容 半導：著力，藉由僅對圖2所示的黏著劑層2的與 部分對應的部分2a照射紫外線，可準備盘 其他部分2b _著力之差異。 +1、 201200575 另外，如圖2所示般使與晶片接 且黏著力下降的上述部分2 2另1:接ί膜3,的界面具有拾取時容易剝離的性質： 另-方面’未騎紫外_部分具有 ^ 成上述部分2b。 几刀的黏者力’而形 如上所述’圖1所示的切割晶片接合膜 2 由未©化㈣外線㈣義著劑卿成的上述部二 2b與晶片接合膜3黏著，可以確保切 二 上述的紫外_化型黏著劑可㈣良好的接離3 3支撐圖用2^她㈣至基料錄_片接合膜 部分2二::片(”膜'的黏著劑層2中’上述 J μ肿日日圓J衣（wafer ring )固定。 上述紫外線固化型黏著劑可以沒有特別限制地使用呈 ^碳:炭雙鍵等紫外線固化性官能基，並且顯示黏著性的材 料。作為紫外線固化型黏著劑，可以麻例如：在丙稀酸 類黏著劑、橡膠類黏著劑等—般的麗感（卵_ sensitivity )黏著劑中調配紫外線固化性的 物成分的添加型紫外線固化型黏著劑。 $ 作為上述壓感黏著劑，自半導體晶圓或玻璃算a 染的電子部件藉由超純水或酒精等有機溶劑的清潔洗;;性 等的觀點而言，較佳為以丙稀酸類聚合物作為基礎聚合物 的丙烯酸類接著劑。 11 201200575 作為上述丙烯酸類聚合物，可以列舉例如：使用 基）丙烯酸烷基酯（例如，曱酯、乙酯、丙西t 甲 „ , , ] @曰、異丙酯、 丁酯、異丁酯、第二丁酯（s-butylester)、第=丁此 / 、 ρ 牙—丁酯（t-butyl ester)、戊酯、異戊酯、己酯、庚酯、辛酯、 C* 己酉旨、 異辛醋、壬醋、癸醋、異癸醋、Ί 燒自旨、十二烧酉t 三烧酿、十四坑醋、+六烧醋、十八絲、二十烧酿等^ 基的碳原子數1〜30、特別是碳原子數4〜18的直鍵或支^ 烷基酯等）及（曱基）丙烯酸環烷酯（例如，環戊g旨、ja 己醋等）的一種或兩種以上作為單體成分的丙烯酸類聚= 物等。另外’（曱基）丙稀酸酯表示丙烯酸錯及/或甲武丙 烯酸酯，本發明的（曱基）全部表示相同的含義。 上述丙烯酸類聚合物，為了改善凝聚力、耐熱性等， 視需要可以含有能夠與上述（曱基）丙烯酸烷基醋或環院 酯共聚合的其他單體成分對應的單元。作為如上所述的&lt; = 體成分’例如可以列舉：丙稀酸、曱基丙婦酸、（甲基） 丙烯酸羧基乙酯、（曱基）丙烯酸羧基戊酯、衣康酸、馬 來酸、富馬酸、巴豆酸等含羧基單體；馬來酸酐、衣康酸 酐等酸酐單體；（甲基）丙烯酸-2-羥基乙酯、（曱基）丙 烯酸-2-經基丙酯、（曱基）丙稀酸-4-經基丁酯、（甲基） 丙烯酸-6-羥基己酯、（甲基）丙烯酸-8-羥基辛酯、（曱基） 丙烯酸-10-羥基癸酯、（曱基）丙烯酸-12·羥基月桂酯、（曱 基）丙烯酸（4-羥曱基環己基）甲酯等含羥基單體；苯乙 烯續酸、稀丙續酸、2-(甲基）丙烯醯胺-2-甲基丙續酸、 (曱基）丙烯醯胺丙磺酸、（曱基）丙烯酸磺丙酯、（甲 12 201200575 基）丙婦ϋ氧蔡俩等含俩 乙醋等含磷酸基單體，·丙_胺早醯顧-2-窥基 合單體成分可以使用_種_ 共聚 的使用妓料全料軸分聚合單體 另外，為了進行㈣，Μ 重以下。 也可以含有多官能單體等作為穴根據需要 上所述的多宫能單體，可二用早體成分。作為如 丙烯酸酯、⑻乙二醇二(甲基〜丙::醇二(’基） 二醇二（甲基）丙稀酸酯、新戊二土醇（聚）丙 季戊四醇二（甲基）丙稀酸酯、「(甲基)丙，酸酿、 (甲基）丙雜旨、環氧（、二季戊四醇六 丙輪、胺基甲酸醋(以)二物、聚醋(甲基） 單體亦可以使用一種或兩種體Z多， ΐ著特性等觀點而言較佳為全部單體ΓΓ的體Γΐ用量2 單^^烯_聚合物可以藉由將單一單體或兩種 =的混合物聚合來得到。聚合可以利用溶液聚合、乳化 2、塊狀聚合、懸浮聚合等任意方式進行。自防止對潔 =被黏體的污染等觀點而言，較佳為低分子量物質的含 ^。就此觀點而言，丙稀酸類聚合物的數目平均分子量 父佳為約30萬以上，更佳約40萬〜約300萬。 另外’為了提高作為基礎聚合物的丙烯酸類聚合物等 的數目平均分子量，上述黏著劑中也可以適當採用外部交 13 201200575 聯劑。外部交聯方法的具體手段可 酉旨化合物、環氧化合物、1丙咬化合上異氰峻 謂的交聯劑並使其反應的方法。聯 3作^吏用量根據與欲交聯的基礎聚合物的平衡，^剩 上，礎聚合物HK)重量份，為約5重量斜於 ，：巧佳為調配01重量份〜5重量份。另外 -步 黏劑、二 =:外也可以使用先前公知的各種増 例如作外制倾單體齡，可《列舉 三經甲基=曰聚物、胺基甲酸酿（甲基）叫酸酉旨、 其）丙(甲基）丙稀酸醋、四經甲基甲燒四（▼ =細醇三⑽峨，、季戊四： 酸酯、戊四醇單雜五（甲基）丙婦 竽戊四知八（甲基）丙烯酸 舉胺基甲酸酯類、聚醚類、聚酯類、聚碳酸酯類、平丁 種低聚物’其分子量在約_〜約 範： 低聚物成分： 烯酸類聚合物等基2對於構成黏著劑的丙 份〜約5〇〇 ^〇〇重量份，例如為約5重量 :量份，較佳約40重量份〜約15〇重量份。 ’作為紫外線固化型黏著劑，除了前面說明的添 201200575 %/ \J I T AJ. 加型紫外線固化型黏著劑以外，還可以列舉使用在聚合物 側鏈或主鏈中或者主鏈末端具有碳_碳雙鍵的聚合物作為 基礎聚合物的内在型紫外線固化型黏著劑。内在型紫外線 固化型黏著劑無需含有或者不大量含有低分子量成分的低 聚物成分等，因此低聚物成分等不會隨時間在黏著劑中移 動，而可以形成穩定的層結構的黏著劑層，因此較佳。 上述具有碳-碳雙鍵的基礎聚合物，可以沒有特別限制 地使用具有碳-碳雙鍵並且具有黏著性的聚合物。作為如上 所述的基礎聚合物’較佳為以丙烯酸類聚合物作為基本骨 架的聚合物。作為丙烯酸類聚合物的基本骨架，可以列舉 上述例示過的丙烯酸類聚合物。 上述丙烯酸類聚合物中碳-碳雙鍵的導入方法沒有特 別限制’可以採用各種方法，然而將碳·碳雙鍵導入聚人物 側鏈在分子設計上比較容易。例如可以列舉：預先將在丙 烯酸類聚合物中具有官能基的單體共聚合後，使具有能夠 與該S能基反應的S能基以及·%I-碳雙鍵的化合物在伴持 碳-碳雙鍵的紫外線固化性的情況下進行縮合或加成反應 的方法。 ~ 作為這些官能基的組合例，例如可以列舉：緩基與環 氧基、羧基與氮丙啶基、羥基與異氰酸酯基等《這些官能 基的組合中若考慮反應追蹤的容易性，較佳為經基與異氮 酸酯基的組合。另外，如果是藉由這些官能基的組合而生 成上述具有碳碳雙鍵的丙稀酸類聚合物的組合，則官能基 可以在丙烯酸類聚合物與上述化合物的任意一侧，在上述 15 201200575 的較佳組合中，較佳為丙稀酸類聚合物具有經基、上述化 合物具有異氰酸酯基的情況。此時，作為具有碳-碳雙鍵的 異氰酸酯化合物，例如可以列舉：甲基丙烯醯異狀酸黯、 2-曱基丙烯醯氧乙基異氰酸酯、間異丙烯基α_二甲基 苄基異氰酸酯等。另外，作為丙浠酸類聚合物，可以使用 將前面例示的含羥基單體或2-羥基乙基乙烯基醚、4_羥基 丁基乙烯基醚、二乙二醇單乙烯基醚的醚類化合物等共聚 合而得到的聚合物。 上述内在型紫外線固化型黏著劑可以單獨使用上述具 有碳-碳雙鍵的基礎聚合物（特別是丙烯酸類聚合 可以在不損㈣性的制⑴脑上述紫外_化性單體成 分或低聚物成分。相對於基礎聚合物1〇〇重量份，紫外 固化性低聚物成分等通常在3〇重量份的範佳、’· 重量份〜ίο重量份的範圍。 平佐馬υBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of using a semiconductor element such as a semiconductor chip to be adhered to an adherend such as a substrate or a lead frame. A thermosetting die bonding film. Further, the present invention relates to a dicing bonding film in which a thermosetting wafer bonding film and a dicing film are laminated. Further, the present invention relates to a method of manufacturing a semiconductor device using the above diced wafer bonding film. [Prior Art] Conventionally, in the manufacturing process of the noon conductor device, silver paste was used when the lead frame and the electric box member were fixed to the semiconductor wafer. The fixing treatment is carried out by applying a gel-like adhesive to a die pad or the like of a frame, and applying a semiconductor wafer thereon and curing the gel-like adhesive layer. However, the gelled adhesive has a large unevenness in coating or the like due to its viscosity behavior or deterioration. As a result, the degree of victory formed is uniform and uniform, which causes the stagnation strength of the semiconductor wafer to be sinful. When the amount of the adhesive agent is insufficient, the semiconductor 曰#盥, the strength is lowered, resulting in the (wire bonchng) step. Semi-conducting == quantity r tender, heart conductor = problem, the rate is falling. This fine processing is followed by the control of the amount of coating, which brings problems to the workability 2012 4 201200575. In the coating step of the above gel-like adhesive, there is a method of additionally applying a gel-like adhesive to a lead frame or a formed wafer. However, in the above method, the "gelatinous adhesive layer is difficult to homogenize". The application of the additional adhesive agent requires special equipment and a long time. Therefore, a dicing wafer bonding film which is followed by holding a semiconductor wafer in the dicing step and also imparting an adhesive layer for wafer fixing required in the mounting step has been proposed (for example, refer to Patent Document 1). The dicing wafer bonding film is disposed on the supporting substrate in a peelable adhesive layer. * After the semiconductor wafer is cut under the holding of the (four) layer, the semiconductor wafer is bonded with the adhesive. The layer peeling 'recycles it individually' and passes through the hard (four) saki to the lead is adhered. From the viewpoint of the thermal conductivity, the adjustment of the melt viscosity, and the thixotropy (= her), the following Patent Document 2 discloses a dicing wafer bonding film in which an inorganic filler or the like is added to the monomer layer. For example, the above-mentioned special crystals of the above-mentioned special crystals are spliced in the semiconductor device represented by the Wei body, and the semiconductor wafer is laminated into a plurality of semiconductors with high-capacity thin-layered semiconductor wafers == plus The thickness of the semiconductor package itself is also added: thinning of the semiconductor B bonding film. Based on the above background, the + conductors are rounded or semi-fragile. Therefore, when the semiconductor strength of the semiconductor wafer is broken, the semiconductor wafer is damaged. The reason for this may be that the filling material of the inorganic filler such as the = = ί is an inappropriate size ' and the content thereof is not properly prepared; the wafer bonding pressure applied when the force is w 1 'passes The filler material is in the semiconductor wafer, resulting in damage to the semiconductor wafer. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. 8-88411. The above-mentioned problem (IV) is proposed by the thermosetting type r(tetra)? When the wafer wafer is bonded to the bonding substrate, a stress applied to the semiconductor wafer is applied by filling, thereby removing the damaged thermal-wafer bonding film of the semiconductor wafer and the dicing wafer bonding having the upper wafer bonding germanium. membrane. Further, the present invention also provides a method of manufacturing a semiconductor device for dicing a wafer bonding film. In order to solve the above-mentioned conventional problems, the inventors of the present invention have studied a diced wafer bonding film in which the above-described thermosetting wafer bonding film is contacted with a thermosetting wafer, and the following method. As a result, it was found that the above object can be attained by using Duncheng and the present invention has been completed. The thermosetting wafer bonding film according to the present invention is a thermosetting wafer bonding film containing an adhesive group and a filler containing fine particles, and the thickness of the above-mentioned thermosetting wafer bonding film is set to γ in 201200575. (μπι), and the ratio of the maximum particle diameter of the above-mentioned filler to χ(μιη) is again /¥(_) is 丨 or less. According to the above configuration, the semiconductor wafer is bonded by the wafer bonding film by making the relationship between the thickness Υ (μηι) of the thermosetting wafer bonding film and the maximum particle diameter χ (μηι) of the filling material χ/γ$丨. When applied to the adherend, the stress concentration on the semiconductor wafer is reduced by filling the material. As a result, even if the semiconductor wafer is made thinner, the semiconductor wafer can be reduced in damage, and the semiconductor device can be manufactured, and the throughput can be improved. In the above configuration, the Χ(μιη) is preferably in the range of μ 5 μηη to 5 μηη. In the above configuration, the enthalpy (four) is preferably in the above configuration, and in the above configuration, the content of the filler is preferably in the 丨 part by weight relative to the adhesive composition. ~8〇 parts by weight. Further, in the above configuration, the content of the filler is preferably in the range of j parts by volume to the volume of the adhesive composition. In the above configuration, the maximum cross-sectional height Rt of the roughness curve in the thermosetting wafer bonding film is preferably in the range of 〇1 μηη to 2.3 μηη. In order to solve the above problems, the person Zhao Zhao recognizes the cutting wafer connection of the present invention. The above-mentioned layer has the above-mentioned _thermal_bonding film. In order to solve the above problems, the manufacturing method of the semiconductor device of the present invention 201200575 : : h 用 用 用 用 用 用 用 用 用 用 用 用 切割 切割 切割 切割 切割 切割 切割 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体And affixing on the back side of the semiconductor wafer::: cutting the S-chip bonding film, cutting step, cutting the above-mentioned semiconductor-bonded wafer bonding film together... wafer == dicing wafer bonding film together with the above Thermosetting type = 1 film V and wafer bonding step, through the above-mentioned thermoset L-chip bonding film 'at the temperature touch. The semiconductor wafer was bonded to the filament body under the conditions of c ~ shoe bonding pressure = PaM). 5 MPa and bonding time of 0.1 second to 5 seconds. ^ In the above method, when the semiconductor wafer wafer is bonded to the adherend, the filling (4) by the thief-smoke is used to reduce the stress on the thermosetting wafer bonding film of the semiconductor wafer. Therefore, even if the wafer bonding condition of the above-described wafer bonding condition is performed, the semiconductor wafer can be reduced in chipping. That is, in the above method, the semiconductor wafer can be reduced, and the semiconductor device can be manufactured by increasing the throughput. The present invention achieves the effects described below by the means described above. That is, in the thermosetting wafer bonding film of the present invention, the relationship between the thickness Υ (μηι) of the thermosetting wafer bonding film and the maximum particle diameter χ (μηη) of the filler is X/YS 1 . Thereby, when the semiconductor wafer is bonded to the adherend by the thermosetting wafer bonding film, the filling material contained in the film can reduce the local stress applied to the semiconductor wafer. As a result, it is possible to reduce the breakage of the semiconductor wafer, and to increase the yield, thereby achieving the effect of manufacturing a semiconductor device. 8 201200575 [Embodiment] (Cleaning wafer bonding film) A human film is used to describe a thermosetting wafer bonding film (hereinafter referred to as "a wafer bonding film" as follows. _ ί / ::! A schematic cross-sectional view of a dicing die bond 貘. A cross-sectional view of a diced wafer dicing die bond film of the embodiment is shown. Another embodiment of the present invention has a dicing die 接合 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割 切割The dicing film is laminated on the substrate 1 = the μ film 3 is disposed on the wire layer 2. Alternatively, as shown in Fig. 2, the wafer bonding film 3 may be formed only at the workpiece bonding portion. ^*aa^ The above-mentioned substrate i has ultraviolet transmittance, and is in the form of a cut crystal. The strength of the films 10 and 11 is, for example, low density polyethylene, linear I B: !#, medium Density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerization, bribery, homopolypropylene, polybutylene, polymethylpentene, etc., acetonitrile-acetic acid Copolymer, ionomer resin (ionomerresin), ethylene (mercapto) acrylic acid , olefin (fluorenyl) acrylate (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polynaphthalene Polyester such as ethylene glycol ester, polycarbonate, polyimide, polyether ether ketone, polyimide, polyether quinone, polyamine, fully aromatic polyfluorene, polyphenylene sulfide, Aromatic polyamide (paper), glass, glass cloth, fluorine resin, polyethylene, polyvinylidene gas, cellulose resin, polyoxyl 201200575 resin, metal (foil), paper, etc. The material of the base material 1 may be a polymer such as a crosslinked body of the above resin. The above-mentioned thin material may be used for stretching, or may be subjected to a branching or biaxial stretching. ^The heat-shrinkable resin sheet' can reduce the adhesion area of the adhesive layer 2 and the wafer bonding films 3, 3 by shrinking the substrate after cutting, and can realize the semiconductor from * The recovery of the wafer is facilitated. In order to improve the adhesion to the adjacent layer, the retention, and the like, the substrate surface can be implemented. Conventional surface treatments, for example, chromic acid treatment, ozone exposure, = flame burst 4, 冋 piezoelectric shock exposure, chemical or physical treatment such as ion silk treatment, and coating treatment using a primer (for example, an adhesive substance described later). The substrate 1 may be appropriately selected from materials of the _ or non-type, and a material obtained by blending a plurality of materials may be used as needed. In addition, in the soil material, in order to impart protection to the neon, it is possible to The substrate 包含ί includes a metal, an alloy, a surface, and the like, and has a thickness of about 1 to 1 (four) steaming. The substrate 1 may be a single layer or two or more layers. The thickness of the substrate 1 is not particularly limited. It can be suitably determined to be about 5/zm to about 2 〇〇vm. The adhesive layer 2 of the above-mentioned adhesive layer 2 is composed of an ultraviolet curable adhesive. The purple facilitating agent can increase the degree of crosslinking by irradiation of ultraviolet rays to accommodate semi-conducting: focusing on the other parts of the disk by irradiating ultraviolet rays only to the portion 2a corresponding to the portion of the adhesive layer 2 shown in FIG. 2b _ focus on the difference. +1, 201200575 In addition, as shown in Fig. 2, the above-mentioned portion 2 2 which is connected to the wafer and whose adhesion is lowered is connected to the film 3, and the interface is easily peeled off at the time of picking up: The _ portion has ^ into the above portion 2b. The dicing force of a few knives is the same as described above. The dicing wafer bonding film 2 shown in Fig. 1 is adhered to the wafer bonding film 3 by the above-mentioned portion 2b which is formed by the outer layer (4). 2. The above-mentioned UV-based adhesive can be (4) goodly attached to the 3 3 support pattern by 2^She (4) to the base material recording sheet joint film portion 2 2:: sheet ("film" in the adhesive layer 2" In the above-mentioned ultraviolet-curable adhesive, a UV curable functional group such as a carbon double bond or a carbon double bond can be used without any particular limitation, and an adhesive property is exhibited. The adhesive can be used, for example, as an additive-type ultraviolet curable adhesive in which an ultraviolet curable component is blended in an adhesive such as an acrylic adhesive or a rubber adhesive. The above pressure sensitive adhesive is cleaned by an organic solvent such as ultrapure water or alcohol from the semiconductor wafer or the glass, and is preferably made of an acrylic polymer. The base polymer of acrylic followed by 11 201200575 The above acrylic polymer may, for example, be a base alkyl acrylate (for example, oxime ester, ethyl ester, propionate, ], 曰, isopropyl ester, butyl ester, iso) Butyl ester, s-butylester, s/butyl, t-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, C*酉 、, iso vinegar, vinegar, vinegar, vinegar, vinegar, Ί Ί 自 自 、 、 十二 十二 十二 十二 十二 十二 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 三 、 、 、 、 、 、 ^ a group having 1 to 30 carbon atoms, particularly a straight or branched alkyl ester having 4 to 18 carbon atoms, and a cycloalkyl (meth) acrylate (for example, cyclopentyl glycerol, ja vinegar, etc.) One or two or more kinds of acrylic polyethers and the like as a monomer component. Further, '(mercapto) acrylate refers to an acrylic acid misc and/or a propyl acrylate, and all of the fluorenyl groups of the present invention have the same meaning. The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the above-mentioned (mercapto)acrylic acid alkyl vinegar or a cyclic ester ester, in order to improve cohesive force, heat resistance and the like. Examples of the &lt;= body component ' as described above include acrylic acid, mercaptopropyl benzoic acid, carboxyethyl (meth)acrylate, carboxypentyl acrylate (mercapto), itaconic acid, and maleic acid. a carboxyl group-containing monomer such as fumaric acid or crotonic acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate or 2-propylpropyl (meth)acrylate; (fluorenyl) acrylic acid-4-butylbutyl ester, (meth)acrylic acid-6-hydroxyhexyl ester, (meth)acrylic acid-8-hydroxyoctyl ester, (mercapto)acrylic acid-10-hydroxydecyl ester a hydroxyl group-containing monomer such as (mercapto)acrylic acid-12-hydroxylauryl ester or (mercapto)acrylic acid (4-hydroxydecylcyclohexyl)methyl ester; styrene-renewed acid, dilute propionic acid, 2-(methyl group) ) acrylamide-2-methylpropionic acid, (mercapto) acrylamide sulfonate, sulfopropyl (mercapto) acrylate, (A 12 201200575 base) For example, if the phosphoric acid-containing monomer is used, the propylene-amine can be used as the base material, and the monomer can be used. The following heavy. It is also possible to contain a polyfunctional monomer or the like as a hole as described above, and to use an early component. As, for example, acrylate, (8) ethylene glycol bis(methyl propylene:: alcohol bis (' yl) diol di (methyl) acrylate, neopentyl glutitol (poly) pentivatetraol di (methyl) Acrylate, "(meth)propene, acid brewing, (methyl) propyl, epoxy (dipentaerythritol hexa-propane, urethane acetonate), polyester (methyl) single The body may also use one or two kinds of bodies Z, and it is preferable that the amount of all the monomers ΓΓ 2 2 2 _ _ 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物 聚合物The mixture can be obtained by polymerization. The polymerization can be carried out by any method such as solution polymerization, emulsification 2, bulk polymerization, suspension polymerization, etc. From the viewpoint of preventing contamination of the adherend or the adherend, it is preferred to contain a low molecular weight substance. From this point of view, the number average molecular weight of the acrylic polymer is preferably about 300,000 or more, more preferably about 400,000 to about 3,000,000. In addition, 'in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer. In the above adhesives, external crossover 13 201200575 can also be used as appropriate. External The specific method of the method can be a compound, an epoxy compound, a method of reacting and reacting a cross-linking agent with an isocyanate, and the amount of the compound is determined according to the base polymer to be crosslinked. Balance, ^ remaining, base polymer HK) parts by weight, about 5 weights oblique,: Qiaojia is formulated to 01 parts by weight to 5 parts by weight. In addition - step adhesive, two =: can also be used previously Various kinds of hydrazines, for example, for external singulation, can be enumerated as "exemplified by trimethyl group = oxime polymer, amino carboxylic acid (methyl) is called acid hydrazine, and its) propyl (meth) acrylate vinegar, four Methyl ketone four (▼ = fine alcohol three (10) oxime, pentaerythritol: acid ester, pentaerythritol, single heteropenta(methyl) propyl ketone, tetraki octyl (meth) acrylate urethane Classes, polyethers, polyesters, polycarbonates, butyl polymers oligomers whose molecular weight is about _~about: oligomer component: base 2 of olefinic polymer, etc. To about 5 parts by weight, for example, about 5 parts by weight, preferably about 40 parts by weight to about 15 parts by weight. 'As ultraviolet curing type sticky In addition to the addition of 201200575 % / \JIT AJ. The addition of the UV-curable adhesive may also be exemplified by using a polymer having a carbon-carbon double bond in the side chain or main chain of the polymer or at the end of the main chain. An intrinsic type UV-curable adhesive for a base polymer. The intrinsic type UV-curable adhesive does not need to contain or contain a large amount of oligomer components of a low molecular weight component, and therefore the oligomer component does not move in the adhesive over time. Further, it is preferable to form a pressure-sensitive adhesive layer having a stable layer structure. The above-mentioned base polymer having a carbon-carbon double bond can be a polymer having a carbon-carbon double bond and having adhesiveness without particular limitation. The base polymer 'as described above is preferably a polymer having an acrylic polymer as a basic skeleton. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above. The method of introducing the carbon-carbon double bond in the above acrylic polymer is not particularly limited. Various methods can be employed. However, introduction of a carbon-carbon double bond into the side chain of the polyant is relatively easy in molecular design. For example, a monomer having a functional group in an acrylic polymer is copolymerized in advance, and a compound having an S-energy group capable of reacting with the S-energy group and a %I-carbon double bond is accompanied by carbon- A method of performing a condensation or an addition reaction in the case of ultraviolet curing of a carbon double bond. Examples of the combination of these functional groups include a buffer group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. For example, in the combination of these functional groups, it is preferred to consider the ease of reaction tracking. A combination of a thiol group and an isobornyl group. Further, if a combination of the above-described acrylic acid-based polymers having a carbon-carbon double bond is produced by a combination of these functional groups, the functional group may be on either side of the acrylic polymer and the above compound, in the above-mentioned 15 201200575 In a preferred combination, it is preferred that the acrylic acid polymer has a trans group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylic acid bismuth hydride, 2-mercapto propylene oxyethyl isocyanate, and m-isopropenyl α dimethyl benzyl isocyanate. Wait. Further, as the propionic acid-based polymer, an ether compound of the above-exemplified hydroxyl group-containing monomer or 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A polymer obtained by copolymerization. The above-mentioned intrinsic type ultraviolet curable adhesive may be used alone as the base polymer having a carbon-carbon double bond (especially, the acrylic polymerization may be carried out without damage (4). The above ultraviolet-chemical monomer component or oligomer The component of the ultraviolet curable oligomer or the like is usually in the range of 3 parts by weight, preferably in parts by weight to 重量 parts by weight, based on 1 part by weight of the base polymer.

上迷系外線固化型黏著劑在藉由紫外線制化 含有光聚合起始劑。作為光聚合起始劑，例如可 4- ( 2=基乙氧基）苯基（2_經基_2·丙基）酮、_基α 乂 -甲基苯乙酮、2-曱基_2_羥基苯丙酮、〗經基環己_ 酮等α-酮醇類化合物；甲氧基苯乙 ‘ J 基苯乙酮、从二乙氧基苯乙酮、2_甲基^ (benzom ethyl ether)、苯偶姻異丙醚、 ^ 類化合U基二甲基___/ 氣等方香族續醯氣類化合物；1-苯鋼-U^炫丄 201200575 W I -r^ 酮-2-(〇-乙氧基艘基)肪等光活性蔣類化合物；二苯曱酮、 苯曱酿苯甲酸、3,3，-二曱基-4-曱氧基二苯曱酮等二苯甲酉同 類化合物；噻噸酮、2-氯嗟噸酮、2-曱基噻噸酮、2,4-二甲 基噻噸酮、異丙基噻噸酮、2,4_二氯噻噸酮、2,4_二乙基噻 噸酮、2,4-二異丙基噻噸酮等噻噸酮類化合物；樟腦醌； 鹵代酮；醯基膦氧化物；醯基膦酸酯等。相對於構成黏著 劑的丙烯酸類聚合物等基礎聚合物100重量份，光聚合起 始劑的調配量例如為約0.05重量份〜約20重量份。 另外，作為紫外線固化型黏著劑，可以列舉例如：曰 本專利特開昭60-196956號公報中所公開的、含有具有2 個以上不飽和鍵的加成聚合性化合物、具有環氧基的烧氧 基矽烷等光聚合性化合物、以及羰基化合物、有機硫化合 物、過氧化物、胺、鏽鹽（onium salt)類化合物等光聚合 起始劑的橡膠類黏著劑或丙稀酸類黏著劑等。 相對於晶片接合膜3、3’，上述黏著劑層2的紫外線 固化後的黏著力為0.001 Ν/lOmm寬〜1 N/l〇mm寬，較佳 為 0.005N/10mm 寬〜0.5N/10mm 寬’更佳為 o.oiN/lOmm 寬〜〇·1 N/10mm寬(180度剝離力、剝離速度3〇〇 。 若為上述數值範圍内，將黏貼有晶片接合膜的接著劑的半 導體晶片拾取時，不需要將半導體晶片過度固定，而可謀 求更佳的拾取性。 作為於上述黏著劑層2形成上述部分2a的方法，可以 列舉：在基材1形成紫外線固化型黏著劑層2之後，對上 述部分2a局部地照射紫外線使其固化的方法。局部的紫外 17 201200575 線照射可以通過形成有與半導體晶片黏貼部分3a以外的 部分3b等對應的圖案的光罩來進行。另外，可以列舉點狀 (spot)地照射紫外線進行固化的方法等。紫外線固化型 黏著，層2的形成可以藉由將設置在隔片上的紫外線固化 型黏著劑層轉印到基材1上來進行。局部的紫外線固化也 可以對設置在隔片上的紫外線固化型黏著劑層2進行。 切割晶片接合膜10的黏著劑層2中，可以對黏著劑層 2的一部分進行紫外線照射，使得上述部分的黏著力^ 其他部分2b的黏著力。即，可以使用對基材i的至少單面 的對應於與半導體晶圓點貼部分3a的部分以外的部分的 整體，局部進行遮光的紐，在該基材上職料線固化 型黏著劑層2後進行紫外線照射，使半導體晶圓黏貼部分 3a對應的部分固化，從而形成黏著力下降的上述部分。 可以將在支持膜上能成為光罩的材料利用印刷或蒸鍍等製 作成遮光材料。藉此，可以有效地製造本發明的切割晶片 接合臈10。 黏著劑層2的厚度沒有特別限制，自防止晶片切割面 的缺口及保持接著層的gj定的兼顧性等觀點而言，較佳為 約Ιμιη〜約50μηι’更佳約2μιη〜約3〇μιη，進而佳約5μιη〜 約 25μηι。 上述日日片接合膜3含有接著劑組成物以及包含微粒子 (=微粒子所組成）的填充材料，且上述晶片接合膜的厚 又又為Υ(μιη)上述填充材料的最大粒徑設為x(^m)時， 只要比值X/Y㈠為丨以下，則對上述晶片接合膜無特別限 201200575 定。 上述填充材料可列舉無機填料或有機填料。 性溶融黏度的調整、並且賦予觸變性的 規點而δ，車父佳為無機填料。 作為無機填料並無特別限定，例如可： 氣氧她、魏响、餘傾、三氧 、氧簡、氧化鎂、氧化紹 Γ=:氮化硼、結晶二氧化石夕、非結晶二氧』 等。上述無機填料可單獨使用或併用兩種以上 性提升的觀點而言，較佳為氧輪、氮倾 侧2 ―氧切、非結晶二氧切等。另外，自與晶片接 3的接著性的平衡峨點而言，較佳為二氧切。另外、 作為上述有機填射_聚醯碰、輯舰亞胺 f酮、聚賴亞胺、聚㈣亞胺、财論（nylon)、聚石夕氧 等。上述有機填料可單獨使用或可併用兩種以上。 上述填充材料的最大粒徑χ(μιη)較佳為〇〇5 μιη〜5 :更佳為0.05 μιη〜3 μιη。藉由使填充材料的最大粒徑為 • μΐη以上，則可成為對被黏體的濕潤性良好的晶片接 合膜、’且抑制接著性的下降。另―方面，藉由使上述最大 粒徑為5 μιη以下，則可防止填充材料從晶片接合膜3的 表面突出，且減少在晶片接合時對半導體晶片局部性地施 加過度應力。另外’本發明中亦可將平均粒徑彼此不同的 填充材料組合使用。另外，填充材料的最大粒徑例如是由 光度式的粒徑分布計(H〇RIBA製^，裝置名稱：LA 9l〇) 201200575 求出的值。 上述填充材料的形狀並無特別限定，例如可使用球 狀、橢圓體狀的填充材料。 相對於上述接著劑組成物的重量i〇〇重量份，上述填 充材料的含有量較佳為在1重量份〜80重量份的範圍内， 更佳為在1重量份〜50重量份的範圍内。藉由使上述含有 量為1重量份以上，則可成為對被黏體的濕潤性良好的晶 片接合膜，且抑制接著性的下降。另一方面，藉由使上述 含有量為80重量份以下’則可防止填充材料從晶片接合膜 3的表面突出，且減少在晶片接合時對半導體晶片局部性 地施加過度應力。 々日对於上述接者劑組成物的100體積份，上 填充材料較佳為在i體積份〜40體積份的範圍内，更佳 在1、體積份〜3〇體積份的範圍内。#由使填充材料為i 積份以上，射成為對被黏體的濕潤性良好的晶 膜触且抑制接著性的下降。另—方面，藉由使填充材料 i0積份町’财防止填充材料從晶片接合膜3的表 ΐ ί丄且減少在晶片接合時對半導體^局部性地施加 度應力。 另外 總厚度)並二:t膜3妙的厚度γ_(若為積層體，則' 内，更佳為在2 (疋然而較佳為在1 μΐη〜5 μΠ1的範丨 μΠ1〜4 μΠ1的範圍内。藉由使上述厚度Υ(μιι 二：==被黏體的娜良好的晶片彳 者_下降m藉由使上述厚2 20 201200575 Υ(μιη)為5 μπχ以下’則可防止填充材料從晶片接合膜3的 表面突出，且減少在晶片接合時對半導體晶片局部性地 加過度應力。 晶片接合膜3中粗糙度曲線的最大剖面高度Rt較隹為 (U μιη〜2.3 μιη的範圍内，更佳為i 5 μη1的範圍内。 藉由使上述农大剖面咼度Rt為以上，則可 變得容易。另-方面，藉由使上述最A剖面高度為2 以下，則可減少局部性地施加過度應力。然而，根據 〇6(H ’並且制非接觸絲錄财測 .-1- WYKO), 為經過表面傾斜度修正後所測定的值。 ㈣„劑組成物並無特麻定’細健為包含環 氧树月曰、本酚樹脂以及丙婦酸共聚 衣 上述環氧樹脂若為—般用於作為接著劑二 树脂，則無特別限定，例如可用雙紛入型、雙齡 j =A型、氫化雙紛A型、雙龄AF型:i 基甲院^、四^基、三經苯 氧樹脂、或者乙内醯服型、異或多宫能環 縮水甘油基胺型等環氧樹脂。這些環氧甘，酉旨型或 或者兩種以上組合使用。這些環 ’曰。以單獨使用 為具有苯環、聯苯環、萘環等芳香族環曰的^發明中特佳 可列舉齡盤型環氧樹脂、含有苯、衣氧樹赌。具體 環氧樹月旨、含有聯苯骨架龄 ^架=苯齡紛經型 衣氧树知、雙酚A型環氧 21 201200575 ^月曰又紛:型%氧樹脂、四甲基聯苯盼型環氧樹脂、三 苯基曱烧型環氧樹脂、萘型環氧樹脂等。在於這些^ 氧樹脂與作，m化義苯_脂的反舰高、耐熱性^優 良。另外，環氧樹脂較少含有使半導體元件腐㈣離子性 不純物等。 —上述環氧樹脂的重量平均分子量較佳為在3〇〇〜15〇〇 的範圍内，更佳為在350〜1000的範圍内。若重量平均分 子量未滿300，則熱固化後的晶片接合膜3的機械強度、 耐熱性、耐濕性會有下降的情況。另一方面，若重量平均 分子量超過1500，則熱固化後的晶片接合膜3變成剛性而 會有脆弱的情況。然而，本發明中的重量平均分子量是意 指利用凝膠滲透層析法(GPC)，並且使用根據標準聚苯乙 烯的校準線的聚苯乙烯換算值。 進而上述苯酚樹脂是用於作為上述環氧樹脂的固化 劑，例如可列舉苯酚酚醛樹脂、苯酚聯苯樹脂、苯酚芳烷 樹脂、曱酚酚醛樹脂、第三丁基笨酚酚醛樹脂、壬基苯酚 紛搭樹脂等酚醛型苯酚樹脂、可溶酚醛樹脂型苯酚樹脂、 聚對氧苯乙烯等聚氧苯乙烯等。這些苯酚樹脂可單獨使 用’或兩種以上組合使用《這些苯酚樹脂中較佳為苯酚酚 越樹脂或苯酚芳烷樹脂。這是因為可以提高半導體裝置的 連接可靠度。 上述苯酚樹脂的重量平均分子量較佳為在300〜1500 的範圍内，更佳為在350〜1000的範圍内。若重量平均分 子量未滿300,則上述環氧樹脂的熱固化會有不充分且無 22 201200575 / -r^fyiL· 法得到充分的強韌性的情況。另一方面，若重量平均分子 量超過1500,則會有變得高黏度，且在晶片接合膜的製造 時的操作性下降的情況。 上述ί衣氧樹脂與苯紛樹脂的調配比例例如以上述環氧 樹脂成分中的環氧基每1當量，苯酚樹脂中的羥基較合適 為0.5當量〜2.0當量的方式調配。更合適為〇 8當量〜i 2 當量。即若兩者的調配比例超過上述範圍，則無法進行充 刀的固化反應，且環氧樹脂固化物的特性容易劣化。 另外，相對於丙烯酸共聚合體100重量份，上述環氧 樹脂與苯酚樹脂的混合量較佳為在10重量份〜200重量份 的範圍内。 作為上述丙烯酸共聚合體並無特別限定，然而在本發 明中較佳為含有叛基的丙稀酸共聚合體、含有環氧基丙婦 酸共聚合體。作為用於上述含有羧基的丙烯酸共聚合體的 吕能基單體可列舉丙烯酸或曱基丙烯酸。丙烯酸或曱基丙 烯酸的含有量是以酸價在1〜4的範圍内的方式調節而成。 其剩餘部位可用丙烯酸曱酯、曱基丙烯酸曱酯等具有碳數 1〜8的烷基的丙烯酸烷酯、甲基丙烯酸烷酯、苯乙烯、或 丙烯醯腈等混合物。這些化合物中特佳為（曱基)丙烯酸乙 酯及/或（曱基)丙烯酸丁酯。混合比例較佳為考慮下述的上 述丙烯酸共聚合體的玻璃轉換點(Tg)而調整。^外作為聚 合的方法並無特別限定，例如可採用溶液聚合法、塊狀聚 合法、懸濁聚合法、乳化聚合法等先前公知的方法。 另外，可與上述單體成份共聚合的其他單體成份並無 23 201200575 特別限定，例如可列舉_ 相對於總單體成份祕為G重匕二重 藉由含有上述數值範_的單體成份，則 叮5茱求旋♦力、接著性等的改質。 ，作為丙鱗絲合體崎合綠並無_蚊，例如 合法、塊狀聚合法、懸濁聚合法、乳化聚合 法等先刖公知的方法。The above-mentioned external curable adhesive contains a photopolymerization initiator by ultraviolet light. As the photopolymerization initiator, for example, 4-( 2=ylethoxy)phenyl(2-po- 2 propyl) ketone, _yl α 乂-methylacetophenone, 2-mercapto group _ _-hydroxypropiophenone, α-keto alcohol compound such as cyclohexanone; methoxyphenethyl ' J acetophenone, from diethoxyacetophenone, 2-methyl ketone Ether), benzoin isopropyl ether, ^-like U-based dimethyl ___ / gas, etc. Fang Xiangzu continued helium gas compound; 1-benzene steel-U^炫丄201200575 WI -r^ ketone-2- (〇-ethoxyl group), such as photoactive jiang compound; benzophenone, benzoquinone, benzoic acid, 3,3,-dimercapto-4-indolyl dibenzophenone, etc.酉similar compounds; thioxanthone, 2-chloroxanthone, 2-mercaptothioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone a thioxanthone compound such as 2,4-diethylthioxanthone or 2,4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; a mercaptophosphine oxide; a mercaptophosphonate. The amount of the photopolymerization initiator is, for example, from about 0.05 part by weight to about 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the adhesive. In addition, as an ultraviolet-curable adhesive, for example, an addition polymerizable compound having two or more unsaturated bonds and an epoxy group-containing one disclosed in Japanese Laid-Open Patent Publication No. SHO-60-196956 A photopolymerizable compound such as oxydecane, or a rubber-based adhesive such as a carbonyl compound, an organic sulfur compound, a photopolymerization initiator such as a peroxide, an amine or an onium salt compound, or an acrylic acid-based adhesive. The adhesive force of the adhesive layer 2 after ultraviolet curing with respect to the wafer bonding film 3, 3' is 0.001 Å / 10 mm wide to 1 N / l 〇 mm width, preferably 0.005 N / 10 mm width ~ 0.5 N / 10 mm The width is more preferably o. oiN/lOmm width ~ 〇 · 1 N/10 mm width (180 degree peeling force, peeling speed 3 〇〇. If the above numerical range, the semiconductor wafer to which the wafer bonding film is adhered is adhered When picking up, it is not necessary to over-fix the semiconductor wafer, and it is possible to achieve better pick-up property. As a method of forming the above-mentioned portion 2a in the above-mentioned adhesive layer 2, after the base material 1 is formed with the ultraviolet curable adhesive layer 2 A method of locally irradiating the portion 2a with ultraviolet rays to cure the portion. The local ultraviolet ray 17 201200575 line irradiation can be performed by a photomask in which a pattern corresponding to the portion 3b other than the semiconductor wafer pasting portion 3a is formed. A method of curing by spot irradiation with ultraviolet rays, etc. The ultraviolet curing type adhesion is performed by transferring the layer 2 of the ultraviolet curable adhesive layer provided on the separator to the substrate 1. The ultraviolet curing of the portion can also be performed on the ultraviolet curable adhesive layer 2 provided on the separator. In the adhesive layer 2 of the wafer bonding film 10, a part of the adhesive layer 2 can be irradiated with ultraviolet rays to make the adhesion of the above portion. The adhesion of the other portion 2b. That is, a portion of the substrate i that is at least one side corresponding to a portion other than the portion of the semiconductor wafer dot portion 3a may be used, and the substrate may be partially shielded from light. After the upper line curing adhesive layer 2 is irradiated with ultraviolet rays, the portion corresponding to the semiconductor wafer pasting portion 3a is cured to form the above-mentioned portion where the adhesive force is lowered. The material which can be used as a mask on the support film can be printed. Or a vapor-shielding material can be produced by vapor deposition or the like. Thereby, the dicing wafer bonding die 10 of the present invention can be efficiently produced. The thickness of the adhesive layer 2 is not particularly limited, since the chipping surface of the wafer is prevented from being cut and the thickness of the bonding layer is maintained. From the viewpoint of compatibility and the like, it is preferably about ιμιη~about 50μηι' more preferably about 2μηη~about 3〇μιη, and further preferably about 5μιη~ about 25μηι The solar junction film 3 includes an adhesive composition and a filler including fine particles (=microparticles), and the thickness of the wafer bonding film is Υ (μιη), and the maximum particle diameter of the filler is set to x ( In the case of ^m), the above-mentioned wafer bonding film is not particularly limited to 201200575 as long as the ratio X/Y(i) is 丨 or less. The above-mentioned filler may be an inorganic filler or an organic filler. The adjustment of the melt viscosity and the regulation of thixotropy are imparted. And δ, the car father is an inorganic filler. As the inorganic filler is not particularly limited, for example: gas oxygen she, Wei ring, codden, trioxane, oxygen simple, magnesium oxide, oxidized Shaohao =: boron nitride, crystal Oxide, non-crystalline dioxin, etc. The inorganic filler may be used singly or in combination of two or more kinds, and is preferably an oxygen wheel, a nitrogen side, an oxygen cut, an amorphous die cut or the like. Further, from the balance point of the adhesion to the wafer 3, dioxotomy is preferred. Further, as the above-mentioned organic filler _ 聚 醯 、 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 辑 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。. The above organic fillers may be used singly or in combination of two or more. The maximum particle diameter χ(μιη) of the above filler is preferably 〇〇5 μm to 5: more preferably 0.05 μm to 3 μmη. When the maximum particle diameter of the filler is ≥ ΐ η or more, the wafer bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, by setting the maximum particle diameter to 5 μm or less, the filler can be prevented from protruding from the surface of the wafer bonding film 3, and excessive stress can be locally applied to the semiconductor wafer at the time of wafer bonding. Further, in the present invention, a filler having different average particle diameters from each other may be used in combination. Further, the maximum particle diameter of the filler is, for example, a value obtained by a photometric particle size distribution meter (H〇RIBA, device name: LA 9l®) 201200575. The shape of the above filler is not particularly limited, and for example, a spherical or ellipsoidal filler can be used. The content of the filler is preferably in the range of from 1 part by weight to 80 parts by weight, more preferably from 1 part by weight to 50 parts by weight, based on the weight of the above-mentioned adhesive composition. . When the content is 1 part by weight or more, the film bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, by setting the above content to 80 parts by weight or less, the filler can be prevented from protruding from the surface of the wafer bonding film 3, and excessive stress can be locally applied to the semiconductor wafer at the time of wafer bonding. The upper filling material is preferably in the range of i part by volume to 40 parts by volume, more preferably in the range of 1 part by volume to 3 parts by volume, per 100 parts by volume of the above-mentioned carrier composition. When the filler is made of i or more, the shot is a crystal film which is excellent in wettability to the adherend and suppresses the decrease in adhesion. On the other hand, by the filling material i0, the filling material is prevented from being filled from the surface of the wafer bonding film 3 and the degree of stress is locally applied to the semiconductor at the time of wafer bonding. In addition, the total thickness is 2: the thickness of the t film is γ_ (if it is a laminate, then 'inside, more preferably 2 (疋, but preferably in the range of 1 μΐη~5 μΠ1, 丨μΠ1~4 μΠ1) By making the above thickness Υ(μιι二:== the good wafer of the adherend _ falling m by making the above thickness 2 20 201200575 Υ (μιη) 5 μπχ or less], the filler material can be prevented from The surface of the wafer bonding film 3 is protruded, and the excessive stress is locally applied to the semiconductor wafer during wafer bonding. The maximum profile height Rt of the roughness curve in the wafer bonding film 3 is less than (U μιη to 2.3 μηη, More preferably, it is in the range of i 5 μη1. It is easy to make the above-mentioned Nongda profile twist Rt equal to or higher. On the other hand, when the height of the most A-profile is 2 or less, the locality can be reduced. Excessive stress is applied. However, according to 〇6 (H' and non-contact wire recording.-1-WYKO), it is the value measured after the surface inclination is corrected. (4) ”The composition of the agent is not specific. The fineness includes the epoxy eucalyptus, the phenol resin, and the propylene glycol copolymer. The oxygen resin is generally used as an adhesive second resin, and is not particularly limited. For example, it can be used in a double-inclusion type, a double-aged type j=A type, a hydrogenated double-type A type, and a double-aged AF type: i. Epoxy resins such as tetra-, tri-phenoxy resins, or bismuth-containing, iso- or poly-glycoglycidylamines, etc. These epoxides, oximes, or a combination of two or more. Ring '曰. Used alone as an aromatic ring fluorene having a benzene ring, a biphenyl ring, a naphthalene ring or the like. Particularly preferred is an age-type epoxy resin, a benzene-containing, a clothing oxygen tree, a specific epoxy tree. The purpose of the month, containing biphenyl skeleton age ^ frame = benzene age versatile clothing oxygen tree know, bisphenol A type epoxy 21 201200575 ^ month 曰 :: type % oxygen resin, tetramethyl biphenyl hope epoxy resin A triphenyl sulfonated epoxy resin, a naphthalene epoxy resin, etc., which are excellent in anti-ship and heat resistance of the oxy- benzene resin, and the epoxy resin is less contained. The semiconductor element is rotted (tetra) ionic impurities, etc. - the weight average molecular weight of the above epoxy resin is preferably in the range of 3 〇〇 15 15 〇〇 More preferably, it is in the range of 350 to 1000. When the weight average molecular weight is less than 300, the mechanical strength, heat resistance, and moisture resistance of the wafer bonding film 3 after heat curing may be lowered. When the weight average molecular weight exceeds 1,500, the wafer bonding film 3 after heat curing becomes rigid and fragile. However, the weight average molecular weight in the present invention means using gel permeation chromatography (GPC), and is used. The phenol resin is used as a curing agent for the epoxy resin, and examples thereof include a phenol phenol resin, a phenol biphenyl resin, a phenol aralkyl resin, and a phenol. A phenolic phenol resin such as a phenol resin, a third butyl phenol novolak resin or a nonyl phenol resin, a phenol resin type phenol resin, a polyoxy styrene such as polyoxy styrene, or the like. These phenol resins may be used singly or in combination of two or more. Among these phenol resins, preferred are phenol phenol resin or phenol aralkyl resin. This is because the connection reliability of the semiconductor device can be improved. The weight average molecular weight of the above phenol resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. If the weight average molecular weight is less than 300, the thermal curing of the above epoxy resin may be insufficient and no sufficient toughness may be obtained by the method of 201200575 / -r^fyiL. On the other hand, when the weight average molecular weight exceeds 1,500, the viscosity is high and the workability at the time of production of the wafer bonding film is lowered. The blending ratio of the above-mentioned oxime resin to the benzene resin is, for example, one equivalent per equivalent of the epoxy group in the epoxy resin component and the hydroxyl group in the phenol resin is suitably from 0.5 equivalent to 2.0 equivalents. More suitably, it is 8 equivalents to 2 i equivalents. In other words, if the blending ratio of both of them exceeds the above range, the curing reaction of the filling process cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate. Further, the amount of the epoxy resin and the phenol resin blended is preferably in the range of 10 parts by weight to 200 parts by weight based on 100 parts by weight of the acrylic copolymer. The acrylic copolymer is not particularly limited. However, in the present invention, a mercapto-containing acrylate copolymer and an epoxy-containing acetoacetate copolymer are preferably contained. The ruthenyl monomer used for the above-mentioned carboxyl group-containing acrylic copolymer may, for example, be acrylic acid or mercaptoacrylic acid. The content of acrylic acid or mercaptoacrylic acid is adjusted so that the acid value is in the range of 1 to 4. The remaining portion may be a mixture of an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as decyl acrylate or decyl methacrylate, an alkyl methacrylate, styrene, or acrylonitrile. Particularly preferred among these compounds are (mercapto)ethyl acrylate and/or (mercapto) butyl acrylate. The mixing ratio is preferably adjusted in consideration of the glass transition point (Tg) of the above-mentioned acrylic copolymer. The method of polymerization is not particularly limited, and for example, a conventionally known method such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, or an emulsion polymerization method can be employed. In addition, other monomer components copolymerizable with the above monomer components are not specifically limited to 201200, 575, for example, _ relative to the total monomer component, G is a double weight, and the monomer component containing the above numerical value is included. , then 叮 5 茱 seeking ♦ force, adhesion and other changes. It is a well-known method such as a legal, block polymerization method, a suspension polymerization method, or an emulsion polymerization method.

v H料聚合體的玻賴換點(Tg)較佳為-3CThe glass transition point (Tg) of the v H polymer is preferably -3C

二目I ^更佳為_20 °C〜15 °C。藉由使玻璃轉換點為_30°C 耐熱性而獲得。另—方面，藉由使玻璃轉換 ....... 以下，則可提南在表面狀態粗糙的晶圓中的切割 後的晶片飛出的防止效果。 ^述丙烯酸絲合體的重量平均分子錄佳為10萬 〜100萬，更佳為35萬〜90萬。藉由使重量平均分子量為 10萬以上，則可使對被黏體表面的高溫時 且亦可提升耐賴。s —H 上 .、，、既另力面，藉由使重量平均分子量為 100萬以下，則可容易地溶解於有機溶劑。 另外’對於晶片接合膜3、3，可視需要適宜地調配其 他添加物。作為其他添加物例如可列舉_劑、魏柄合 劑或離子捕獲(ion trap)劑等。 /乍為上述__如可列舉三氧化録、五氧化錄、漠 化環氧樹龄。這纽_相單獨使用或者兩種以上組 合使用。 作為上述矽烷耦合劑例如可列舉：P_( 3,4_環氧環己基） 24 201200575 乙^曱氧基魏、γ·環氧丙氧基丙基三甲氧基雜 環氧丙氧絲基曱基二乙氧基魏等 獨使用或者_以上組合使用。 -化。物叮以早 3為上述離子捕獲劑’例如可列舉：水滑石類、氮氧 =專。這些離子捕獲劑可叫獨使用或者兩種以上組合 使用。 特別^上f環氧職鮮⑽糾_健_媒並無 ，例如較佳為三笨基膦骨架、胺骨架、三苯基爛 烧月木、三鹵素概骨架等任—者所形成的堪。 祕ί而=片接合膜例如可叹僅包括接著劑層的單層 的構成。另外，亦可適麵合麵轉換溫度抑的孰可塑 ΐΐΓ熱固化溫度不同的熱固化樹脂而形成兩層以上的 一構然而’由於半導體晶圓的切割步驟中使用切削 水’因此會有晶片接合膜賴且含有常態以上的含水率的 情況。若將高含水率的晶片接合膜直接接著於基板等，則 在後固化㈣段在接著界面會有水蒸氣聚集而發生掀起的 情況。因此，藉由以接層认高透祕芯材的構成來 作為晶片接合膜，在_化的階段中，水蒸氣通過膜而擴 散開來’㈣可避免上關題。就如上所述的觀點而言， 晶片接合断以是在糾的單面或雙面形成祕著劑層的 多層結構。 作為上述芯材可列舉膜(例如聚醯亞胺膜、聚酯膜、聚 對苯二甲酸乙二輯膜、聚萘二甲酸乙二醋膜、聚碳酸酷膜 等）、玻璃纖維、以塑膠製不織纖維強化的樹脂基板、鏡面 25 201200575 石夕晶圓、石夕基板或玻璃基板等。 而接合膜3較佳為藉由分隔板（哪論0 曰：接义分隔板是具有供給至實用之前保護 ，材的功能。另外，分隔板進而可用於 =:=;3、3,轉印至切割膜時的支樓基材。分 著工件時剝離。作為分隔板可使 制離劑I絲1 一醋(ΡΕ1)、聚乙婦、聚丙烯或利用敗類 1類剝離劑等的剝離劑進行表面塗 邛過的塑膠膜或紙等。 (半導體裝置的製造方法） 曰片it方式的蝴晶片接合膜ig、12是將任意設置於 :。以下°_、乂、3,上的分隔板適宜剝離，而如下所述地使 況作為臟咖心膜ι〇的情 膜3 1所示，蝴晶片接合膜1G中於晶片接合 复接荖It圓黏貼部分^上壓接半導體晶圓4,並使 _ ^保^固定(絲步驟）。此步驟是藉由壓接親等按 铿于奴一邊按壓一邊進行。 圓4進行半導體晶圓4的切割。藉此，將半導體晶 切割^成預定的尺寸而個片化，進而製造半導體晶片5。 行。H如自半導體晶® 4的電路面侧以—般的方法進 的所此步驟中可採用進行切入至切割晶片接合膜10 割心二切_ eut)的切斷方式等。於此步驟所用的切 &quot;並無特別限定，可使用先前公知的切割裝置。另外， 26 201200575 半導體晶圓是藉由切割晶片接合膜10而被接著固定著，因 此可抑制晶片缺角或晶片飛出，並且亦可抑制半 4的破損。 T版日日圓 為了剝離接著固定於切割晶片接合膜1〇的半導體晶 1 ’而進行半導體晶片5的拾取。拾取的方法並無特別= 定，可採用先前公知的各種方法。例如可列舉自切割晶片 接合膜10側藉由針(needle)將個別的半導體晶片5頂起， 藉由拾取裝置將被頂起的半導體晶片5拾取的方法等。 因為黏著劑層2是紫外線固化型，此處的拾取是 外線照射至上述黏著劑層之後進行。藉此，黏著劑層2對 ，片接合膜3a的黏著力降低，且半導體晶片5的剝離 容易。其結果，可以不使半導體晶片損傷的方式進行拾 紫外線照㈣賴射強度、騎時料條件並無 疋，可視需要而適宜設定。另外，於紫外線照射時使用的 光源可使用上述的光源。 W用的 ,曰二,的半導體晶片5可通過晶片接合膜接著固定 (晶。片接合)於被黏體6。此時的晶片接合溫度較佳= 1〇〇C〜18〇t的範圍内’更佳為在靴〜靴的範圍為内在 Γ更ίίί合愿力較佳為在0·05 MPa〜〇.5廳的範圍 内，更佳為在0.05廳〜0.2MPa的範_。進而，作= 合時間較佳為在0.1秒〜5秒的範_，更佳為在〇 (和、 秒的範_。即使以上述條件下進行 :·=〜3 中藉由晶片接合财所含有的填充I ^ = 晶片5局部性的應力針，因此可有效地防:片體 27 201200575 5的破損。 作為被黏體6可列舉引線框、TAB膜、基板或以其他 方法製造的半導體晶片等。被黏體6例如可以是容易變形 的變形型被黏體，亦可以是不容易變形的非變形型被黏體 (半導體晶圓等）。作為上述基板，可使用先前公知的基板。 另外，作為上述引線框可使用銅引線框、42合金引線框等 金屬引線框或包括玻璃環氧樹脂、BT(雙順丁烯二亞醯胺_ 二吖嗪）、聚醯亞胺等有機基板。但是，本發明不限定於此， 亦包括將半導體元件安裝且與半導體元件電性連接而可 用的電路基板。 本發明的晶片接合膜3為熱固型，因此可藉由加熱固 化使半導體晶片5接著固定於被黏體6並提高耐熱強度。 另外’通過半導體晶圓黏貼部分3a使半導體晶片5接著固 定於基板等而成的材料可供給回流焊接步驟。 另外上述晶片接合可不使晶片接合膜3固化，而僅使 暫時固著於被雜6。之後，秘過加熱步驟而進行打線 接合，進而利用密封樹脂密封半導體晶片，亦可對上述密 封樹脂進行後固化。 ^此時，作為晶片接合膜3，使用暫時固著時的剪切接 著力相對於被黏體6為〇.2MPa以上的晶片接合膜，較佳 為使用剪切接著力更佳為在〇 · 2 MP a〜i 〇 Mp a的範圍内的晶 片接合臈。若晶片接合膜3的剪切接著力至少〇2嫩以 上，即使不經過加熱步驟而進行打線接合步驟，在上述步 驟中由於超θ波震動或加熱，在晶片接合膜3與半導體晶 28 201200575 -w , 一f 片5或被黏體6的接著面不會產生偏移變形。即，半導體 元件並不由於㈣接合_超音波额而軸，藉此防止 打線接合的成功率降低。 曰 上述打線接合是利用接合線7將被黏體6的端子部（内 引線）的末端與半導體晶片上的電極焊墊（未圖示 性連接的步驟（參相3)。作為上述接合線7，可以使用 例如：金線、雜或崎^進行打祕合時的溫度在⑽ C〜250 c、較佳為在8(rc 〜22〇t的範圍内進行。另外，打 ，接合的加_間進行數秒〜數分鐘。連接是在上述溫度 狀態下，藉由組合使用超聲波振動能與施加 的壓力而產生的壓接能來進行。 下、隹^步H以在使晶片接合膜h不完全油化的情況 Ιί二本步驟的過程中半導體晶片5與被黏體6 未藉由晶片接合膜3a而固著。 的牛驟是藉由密封樹脂8將半導體晶片5密封 。本步驟是為了保護搭載在被黏體6 握或接合線7而進行的。本步驟藉由利用 來進行。作為密封樹脂8，例如 4 卿旨。樹脂密封時的加熱溫度通常在175 二〜90秒時間’但是，本發明不限於此 ，例如， ㈣二151 ^185ΐ：下固化數分鐘。由此，在使密封樹 。、g5日通過晶片接合膜3a將半導體晶片5與被黏體 ㈣二卩，本發明中’即使在不進行後述的後固化步驟 的情況下’在本步财也可以细晶片接合膜^進行固 29 201200575 以有助於減少製造步驟數及縮短半導艘裝置的The second mesh I ^ is better _20 °C ~ 15 °C. It is obtained by making the glass transition point _30 ° C heat resistance. On the other hand, by converting the glass, the effect of preventing the flying of the wafer after cutting in the wafer having a rough surface state can be improved. The weight average molecular weight of the acrylic yarn is preferably from 100,000 to 1,000,000, more preferably from 350,000 to 900,000. By setting the weight average molecular weight to 100,000 or more, the high temperature of the surface of the adherend can be improved and the resistance can be improved. When s - H is on the other side, the weight average molecular weight is 1,000,000 or less, and it can be easily dissolved in an organic solvent. Further, for the wafer bonding films 3, 3, other additives may be appropriately formulated as needed. Examples of the other additives include a _agent, a stalk mixture, an ion trap, and the like. /乍 is the above __, for example, the three oxidation records, the five oxidation records, and the desertification epoxy age. This _ phase is used alone or in combination of two or more. As the above decane coupling agent, for example, P_(3,4-epoxycyclohexyl) 24 201200575 ethoxylated gamma, gamma-glycidoxypropyltrimethoxyphospholoxyfluorenyl fluorenyl Diethoxy Wei or the like is used alone or in combination of _ or more. - Chemical. The object 3 is the above-mentioned ion trapping agent', and examples thereof include hydrotalcites and nitrogen oxides. These ion trapping agents may be used alone or in combination of two or more. In particular, it is formed by the fact that it is preferably a trisylphosphine skeleton, an amine skeleton, a triphenyl rotten moon, a trihalogen skeleton or the like. . The splicing film is exemplified by the constitution of a single layer including only the adhesive layer. In addition, it is also possible to form a two-layer or more structure by a thermosetting resin having a different heat-curing temperature and a suitable surface-to-surface conversion temperature. However, since the cutting water is used in the cutting step of the semiconductor wafer, there is a wafer bonding. The film may contain a water content of a normal state or higher. When the wafer bonding film having a high water content is directly attached to the substrate or the like, water vapor is accumulated at the subsequent interface in the post-curing (four) section, and the wafer is lifted. Therefore, by using the structure of the transparent core material as the wafer bonding film, the water vapor is diffused through the film in the stage of _ ing, which avoids the above problem. In the point of view of the above, the wafer bonding is a multilayer structure in which a secret agent layer is formed on one or both sides of the correction. Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a glass fiber, and a plastic material. Non-woven fiber reinforced resin substrate, mirror surface 25 201200575 Shi Xi wafer, Shi Xi substrate or glass substrate. The bonding film 3 is preferably provided by a partition plate (which is a function of the material that is protected before being supplied to the utility. In addition, the partition plate can be used for =:=; 3, 3 The base material of the branch when transferred to the dicing film. Peeling off when the workpiece is separated. As a partitioning plate, the eliminator I wire 1 can be used as a vinegar (ΡΕ1), a polymethylene, a polypropylene or a scum type 1 stripper. A peeling agent or the like is subjected to a surface-coated plastic film, paper, etc. (Manufacturing method of a semiconductor device) The wafer bonding films ig and 12 of the chip-type method are arbitrarily set to: below, _, 乂, 3, The upper partitioning plate is suitably peeled off, and as shown in the following description of the case of the dirty coffee core film ι〇, the wafer bonding film 1G is crimped on the wafer bonding multiplexed 荖It round pasting portion ^ The semiconductor wafer 4 is fixed and fixed (wire step). This step is performed by pressing the bonding affinity button while pressing the slave. The circle 4 performs the cutting of the semiconductor wafer 4. Thereby, the semiconductor crystal is used. Cutting is performed into a predetermined size to form a semiconductor wafer 5. The H is as a circuit side of the semiconductor crystal 4 - into the general method employed in this step to cut into the cut dicing die bonding film 10 is cut heart cut _ two EUT) and the like. The cutting used in this step is not particularly limited, and a conventionally known cutting device can be used. Further, 26 201200575 The semiconductor wafer is subsequently fixed by dicing the wafer bonding film 10, thereby suppressing wafer nicking or wafer flying out, and suppressing breakage of the half 4 . T-page Japanese yen The semiconductor wafer 5 is picked up in order to peel off the semiconductor crystal 1' which is then fixed to the dicing wafer bonding film 1''. The method of picking up is not particularly limited, and various previously known methods can be employed. For example, a method in which individual semiconductor wafers 5 are lifted up by a needle from the side of the dicing wafer bonding film 10, and the semiconductor wafer 5 that is lifted up by the pick-up device is picked up may be mentioned. Since the adhesive layer 2 is of an ultraviolet curing type, picking up here is performed after the external rays are irradiated to the above-mentioned adhesive layer. Thereby, the adhesive force of the sheet bonding film 3a is lowered by the pair of the adhesive layers 2, and the peeling of the semiconductor wafer 5 is easy. As a result, it is possible to carry out the ultraviolet ray irradiation (4) and the riding time condition without damaging the semiconductor wafer, and it is possible to appropriately set it as needed. Further, as the light source used in the ultraviolet irradiation, the above-mentioned light source can be used. The semiconductor wafer 5 for W, and the second, can be fixed to the adherend 6 by a wafer bonding film. At this time, the wafer bonding temperature is preferably in the range of 1 〇〇C to 18 〇t. 'More preferably, the range of the boots-boots is intrinsic. ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί The scope of the hall is better for the van in the 0.05 hall ~ 0.2MPa. Further, the ratio = time is preferably in the range of 0.1 second to 5 seconds, more preferably in the range of 〇 (and, seconds). Even under the above conditions: ·=~3 by wafer bonding The filled I ^ = local stress pin of the wafer 5 can effectively prevent damage of the sheet body 27 201200575 5 . As the adherend 6 , a lead frame, a TAB film, a substrate or a semiconductor wafer manufactured by other methods can be cited. The adherend 6 may be, for example, a deformable adherend which is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) which is not easily deformed. As the substrate, a conventionally known substrate can be used. As the lead frame, a metal lead frame such as a copper lead frame or a 42 alloy lead frame or an organic substrate including a glass epoxy resin, BT (bis-m-butylene hydrazide-dioxazine), or polyimine may be used. However, the present invention is not limited thereto, and includes a circuit board in which a semiconductor element is mounted and electrically connected to a semiconductor element. The wafer bonding film 3 of the present invention is of a thermosetting type, so that the semiconductor wafer 5 can be cured by heat curing. Then fixed to be Further, the material 6 is improved in heat resistance. Further, a material obtained by subsequently fixing the semiconductor wafer 5 to the substrate or the like by the semiconductor wafer bonding portion 3a can be supplied to the reflow soldering step. Further, the wafer bonding can be performed without curing the wafer bonding film 3, and only After that, it is temporarily fixed to the impurity 6. After the bonding step, the bonding step is performed, and the semiconductor wafer is sealed with a sealing resin, and the sealing resin may be post-cured. ^ At this time, as the wafer bonding film 3, temporary solidification is used. The wafer bonding film at a time when the shearing force is about 2 MPa or more with respect to the adherend 6 is preferably a wafer having a shear bonding force of more preferably 〇 2 MP a 〜 〇 Mp a If the shear bonding force of the wafer bonding film 3 is at least 嫩2 or more, the wire bonding step is performed even without a heating step, and the wafer bonding film 3 and the semiconductor crystal are in the above steps due to super-theta wave vibration or heating. 28 201200575 -w , a f-sheet 5 or the adhesion surface of the adherend 6 does not cause offset deformation. That is, the semiconductor element is not axially due to the (4) joint_ultrasonic wave, thereby preventing The success rate of the wire bonding is lowered. The wire bonding is a step of connecting the end of the terminal portion (inner wire) of the adherend 6 to the electrode pad on the semiconductor wafer by the bonding wire 7 (not shown in the drawing (see phase 3). As the bonding wire 7, the temperature at which the bonding is performed using, for example, a gold wire, a miscellaneous or a crucible can be carried out at a temperature of (10) C to 250 c, preferably 8 (rc to 22 〇t). The bonding is performed for a few seconds to several minutes. The connection is performed by using the combination of the ultrasonic vibration energy and the applied pressure in the above temperature state. In the case where the wafer bonding film h is not completely oiled, the semiconductor wafer 5 and the adherend 6 are not fixed by the wafer bonding film 3a. The bobbin is sealed by the sealing resin 8 to seal the semiconductor wafer 5. This step is performed to protect the gripping or bonding wire 7 mounted on the adherend 6. This step is performed by utilization. As the sealing resin 8, for example, 4 is intended. The heating temperature at the time of resin sealing is usually 175 to 290 seconds. However, the present invention is not limited thereto, for example, (iv) two 151 185 ΐ: curing for several minutes. Thus, the tree is sealed. In the case of g5, the semiconductor wafer 5 and the adherend (4) are both entangled by the wafer bonding film 3a. In the present invention, even in the case where the post-cure step to be described later is not performed, the fine wafer bonding film can be solidified in this step. 29 201200575 to help reduce the number of manufacturing steps and shorten the semi-guided ship

上述後固化步驟中，使在前述密封 密封樹脂8完全HJb即使在密封步驟中不足的 3a的固著未被進行的情況下，在本步片接合膜 8的硬化一起進行藉由晶片接合膜3a二密封樹脂 加熱溫度因密封樹脂的種類而異如步驟中的 的範圍内，加熱時間為約〇 5小時 ，65C〜185°C JZ 丄心 J 、、、J 8小時。 另外，本發明的切割晶片接合膜， t於將多個半導體晶片積層進行三7 -表示通過晶片接合膜三維安裝半導體况。圖4 不意圖。如圖4所示的三維安裝的情況子的剖面 為與半導體晶片相同尺寸的至少 ^ ’將切割 方式進行暫時固著。β明i 的方二’f另—個半導體晶片15以其打線接合面2側 的方式暫咖著到晶&gt;1接合膜13上。 马側 以接ίΪ’不進行熱固化步驟而進行打線接合步驟。料此， 以接合線7將半導體⑸5及另 ，此 /、此同時，猎由晶片接合膜3a將被黏體6與半 之間固著。另外，藉由晶片接合膜13將半導體晶片1 201200575 導體晶片15之間固著。另外，密封步驟後，可 以進仃後固化步驟。 曰二ί在半導體晶片的三維安裝的情況下 ，不進行藉由 =㈣σ，3a'13的加熱的加熱處理，因此可以簡化製造 謀求良率的提升。另外，被黏體6不會發生翹曲， 片5及另一個半導體晶片15也不會產生裂紋，因 此此夠貫現半導體树的進—步的薄型化。 體曰圖5所示’可以進行通過晶片接合膜在半導 二胁曰積曰隔片（spacer)的三維安裝。此時，首先在 :垃人6上依序積層晶片接合膜3a、半導體晶片5以及晶 21並且暫時固著。進而，在晶片接合膜21上依 a隔片9、晶片接合膜2卜晶片接合膜3a以及半導體 日日5並且暫時固著。接著，不進行加熱步驟，而進行如 圖5所示的打線接合步驟。藉此，利用接合線了將半導體 晶片5中的電極焊墊與被黏體6電性連接。 然後，進行藉由密封樹脂8將半導體晶片5密封的密 封步驟’並且使密封難8固化的啊，藉由“接合膜 3a、21將被紐6與半導體晶片5 〇 =9之間’藉此，得到半導體_^=驟5 較佳為僅將半V體晶片5側單面密封的_次性密封法 封是為了保護貼附在黏著片上的半導體晶片5而進行 為其方法是歧贿封觸8在難巾_為代表 期間’-般而言使用包括具有多個腔體的上模1 的模具同時進行密封步驟，脂密封 31 201200575 圍内。於密封步驟後亦可進行後 公知2 ^ ’上數則9並無制限定，可使用先前 用聚醯亞_讀絲㈣部。Μ上姚片可使 =4=刷電路板上表面安裝上述的半導體封裝 仏焊槪可以列舉:預先在印刷電路板上供 Γ^ί 熱風等加熱炫融而進行焊接的回流焊接。 曰口、方法可心〗舉熱風回流、紅外線回流等。另外，可以 C J加熱^局部加熱的任意方式。加熱溫度較佳為在240 内。C的㈣岐加熱時間較佳為在丨秒〜⑽秒的範圍 (其他事項） —在上述基板等上二維安裝半導體元件時，形成有半導 =几件的電路的面側中形成有緩衝塗布膜。作為上述緩衝 &quot;'、布膜例如可列舉包括氮化⑪膜或聚醯亞胺樹脂等耐^ 脂的材料。 …' 另外、，半導體元件的三維安裝時，在各段所使用的晶 片接合膜並不限定於包括同—組成的材料的⑸接合膜， 可根據製造條件或用途而適宜變更。 另外，上述實施型態中，雖然敘述關於將多個半導體 元件積層於基板等之後，一次性地進行打線接合步驟的方 式，但是本發明並不限定於此。例如亦可於每次在基板等 上積層半導體元件進行打線接合步驟。 實例 32 201200575 以下’對本發明的較佳實例例示地進行詳細說明，但 疋’該貫例中記載的材料或調配量等只要沒有特別限定的 記載，則本發明的主旨並非將本發明的範圍僅限定於該些 範圍。另外，份在此意指重量份。 (實例1) 將二羥基苯基甲烷型環氧樹脂（日本化藥股份有限公 司製，商品名.ΕΡΡΝ·501ΗΥ)12重量份、苯二曱基酚醛型 苯酚樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)4重量份、丙烯酸共聚合體（n〇gawa (^HEMICAL股份有限公司製，商品名AR31)36重 1伤、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製，商品名：SO-E2，最大粒徑i 4 μιη，平均粒 徑0.5叫)40重量份溶解於甲基乙基酮，而調製出濃度15〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離概塾的聚石夕氧 烷脫模處理後的厚度38 μιη的包括聚對苯-甲酸 薄膜的脫模處理膜上，然後在丨30ΐ乾+燥本：二 製作厚度5 μιη的熱固型晶片接合膜a。 (實例2) 將三經基苯基甲烧型環氧樹脂（日本化藥股份有限公 司製，商品名：EPPN-5_Y)4重量份、苯二甲基酚駿型 苯酚樹脂（明和化成股份有限公司製），商品名. MEH7800H)4重量份、丙烯酸共聚合體（n〇Gawa CHEMICAL股份有限公司製’商品名〜灿ar3i)i2重 33 201200575 虽伤、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限a司製，商品名：s〇_E2，最大粒徑1 4 ，平均粒 徑〇.5μιη)80重量份溶解於曱基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烷脫模處理後的厚度38 μιη的包括聚對苯二〒酸乙二醇酯 薄膜的脫模處理膜上，然後在13〇〇c乾燥2分鐘。藉此， 製作厚度5 μιη的熱固型晶片接合膜b。 (實例3) 將三羥基苯基甲烷型環氧樹脂（日本化藥股份有限公 司製，商品名· ΕΡΡΝ-501ΗΥ)12重量份、苯二甲基紛酸型 苯酚樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)12重量份、丙烯酸共聚合體（n〇gawa CHEMICAL股份有限公司製，商品名Revftai八们1)36重 量份、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製，商品名：SO-E2，最大粒徑1 4 μιη，平均粒 徑0.5 μιη)40重量份溶解於曱基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烷脫模處理後的厚度38 μηι的包括聚對苯二曱酸乙二醇酯 薄膜的脫模處理膜上，然後在130。(：乾燥2分鐘。藉此， 製作厚度3 μιη的熱固型晶片接合膜c。 (實例4) 將三羥基苯基甲烧型環氧樹脂（日本化藥股份有限公 34 201200575 司製，商品名·· ΕΡΡΝ-501ΗΥ)4重量份、苯二曱基酚醛型 苯酚樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)4重量份、丙烯酸共聚合體（NOGAWA CHEMICAL股份有限公司製’商品名Revitai AR3i)12重 量份、作為填充材料的球狀二氧化石夕(ADMATECHS股份 有限公司製，商品名：SO-E2，最大粒徑ι·4 μπι，平均粒 径0.5 μηι)80重量份溶解於甲基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯塾的聚石夕氧 ，脫模處理後的厚度38 μιη的包括聚對苯二曱酸乙二醇酯 薄膜的脫減理膜上’然後在丨抓賴2分鐘。藉此， 製作厚度3 μιη的熱固型晶片接合膜D。 (實例5) 將三織苯基甲_環氧翻旨（日本储股份有限公 商品名：EPPN_聰γ)12重量份、笨二曱基祕型 本酚樹脂（明和化成股份有 ΜΕΗ7800Η)12重量份、兩洛減幻商〇〇名· CHBMICAL 51 ^ 篁伤、作树充材_雜二氧 ） 有限公司製，商品名：S0_E3，异/二顧ATECHS股伤 徑0.9㈣40重量份溶解=粒徑5.〇卿，平均粒 重量⑽接著劑組成物 基乙基酉同，而調製出濃度15.〇 舰溶作為剝離襯_氧 μιη的包括料笨二甲酸乙二醇醋 35 201200575 薄膜的脫模處理膜上，然後在13(TC乾燥2分鐘。藉此， 製作厚度5 μιη的熱固型晶片接合膜e。 (實例6)In the post-cure step, in the case where the sealing seal resin 8 is completely HJb, even if the fixation of 3a insufficient in the sealing step is not performed, the hardening of the sheet bonding film 8 is performed by the wafer bonding film 3a. The heating temperature of the second sealing resin varies depending on the kind of the sealing resin as in the range of the step, and the heating time is about 5 hours, 65 C to 185 ° C JZ 丄 J, J, J 8 hours. Further, the dicing wafer bonding film of the present invention is formed by laminating a plurality of semiconductor wafers three-dimensionally to three-dimensionally mount semiconductor states through the wafer bonding film. Figure 4 is not intended. The cross-sectional view of the three-dimensional mounting as shown in Fig. 4 is such that at least ^' of the same size as the semiconductor wafer temporarily fixes the cutting method. The other semiconductor wafer 15 of the ?-i is placed on the crystal bonding film 13 so as to be on the side of the wire bonding surface 2. The horse side is subjected to a wire bonding step without performing a heat curing step. In this case, the semiconductor (5) 5 and the other, at the same time, are bonded to the adherend 6 and the half by the wafer bonding film 3a. Further, the semiconductor wafer 1 201200575 is bonded to the conductor wafer 15 by the wafer bonding film 13. Alternatively, after the sealing step, a post-cure step can be performed. In the case of three-dimensional mounting of a semiconductor wafer, heat treatment by heating of =(4) σ, 3a'13 is not performed, so that the manufacturing can be simplified and the yield can be improved. Further, the adherend 6 does not warp, and the sheet 5 and the other semiconductor wafer 15 are not cracked, so that the thinning of the semiconductor tree can be achieved. The three-dimensional mounting of the separator in the semi-conducting dam is carried out by the wafer bonding film as shown in Fig. 5. At this time, first, the wafer bonding film 3a, the semiconductor wafer 5, and the crystal 21 are sequentially laminated on the person 6 and temporarily fixed. Further, on the wafer bonding film 21, the spacer 9, the wafer bonding film 2, the wafer bonding film 3a, and the semiconductor day 5 are temporarily fixed. Next, the wire bonding step as shown in Fig. 5 is carried out without performing the heating step. Thereby, the electrode pads in the semiconductor wafer 5 are electrically connected to the adherend 6 by bonding wires. Then, a sealing step of sealing the semiconductor wafer 5 by the sealing resin 8 is performed, and the sealing difficulty 8 is cured, by "the bonding film 3a, 21 will be between the button 6 and the semiconductor wafer 5 9 = 9" Preferably, the semiconductor sealing film is sealed on the side of the half V-body wafer 5 to protect the semiconductor wafer 5 attached to the adhesive sheet, and the method is a bribe seal. In the case of a difficult towel _ during the representative period, the sealing step including the upper mold 1 having a plurality of cavities is used in the same manner, and the sealing step is performed in the grease seal 31 201200575. It can also be known after the sealing step 2 ^ 'The number of the upper 9 is not limited, you can use the previous use of the poly-Asian _ read silk (four). Μ上姚片 can be = 4 = the surface of the brush board is mounted above the semiconductor package soldering 槪 can be listed: pre-printing The circuit board is provided with reflow soldering for heating and squeezing, such as hot air. The rinsing method and method can be carried out by hot air reflow, infrared reflow, etc. In addition, CJ can be heated by any method of local heating. For the inside of 240. C (four) 岐 heating Preferably, in the range of leap seconds to (10) seconds (other matters) - when the semiconductor element is mounted two-dimensionally on the substrate or the like, a buffer coating film is formed on the surface side of the circuit in which the semiconductor is formed. For the buffering film, for example, a film of a film such as a nitride film or a polyimide resin may be used. [In addition, in the case of three-dimensional mounting of a semiconductor element, the wafer bonding film used in each stage is (5) The bonding film is not limited to the material of the same composition, and may be appropriately changed depending on the production conditions or the use. In the above embodiment, the above-described embodiment is described in a single step after a plurality of semiconductor elements are laminated on a substrate or the like. The method of bonding the wire bonding step is not limited thereto. For example, the wire bonding step may be performed by laminating a semiconductor element on a substrate or the like each time. Example 32 201200575 Hereinafter, a preferred example of the present invention will be described in detail, However, the material, the amount of preparation, and the like described in the example are not specifically limited, and the gist of the present invention is not intended to be only the scope of the present invention. In this case, it is intended to mean a part by weight. (Example 1) 12 parts by weight of a dihydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ΕΡΡΝ·501ΗΥ), Benzene phenolic phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: ΜΕΗ7800 Η) 4 parts by weight, acrylic acid copolymer (n〇gawa (manufactured by H. H. Co., Ltd., trade name: AR31) 36 heavy 1 injury, 40 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum particle diameter i 4 μηη, average particle diameter 0.5) was dissolved in methyl ethyl ketone to prepare a filler. An adhesive composition having a concentration of 15% by weight. Applying the solution of the adhesive composition to a release-treated film comprising a polyparaphenylene-formic acid film having a thickness of 38 μm after demolding as a stripping agent, and then drying at 丨30ΐ : A thermosetting wafer bonding film a having a thickness of 5 μm was produced. (Example 2) 4 parts by weight of a phthalocyanine-based epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-5_Y), benzoyl phenol phenol resin (Minghe Chemical Co., Ltd.) (manufactured by the company), the product name. MEH7800H) 4 parts by weight, acrylic acid copolymer (n〇Gawa Chemical Co., Ltd. 'trade name ~ ar ar3i) i2 weight 33 201200575 Although the injury, spherical cerium oxide as a filling material (ADMATECHS Limited stock system, trade name: s〇_E2, maximum particle size 14 4 , average particle size 〇.5μιη) 80 parts by weight dissolved in mercapto ethyl ketone, and prepared to a concentration of 15 〇 wt% of the composition of the adhesive Things. The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, and then at 13 〇. 〇c dry for 2 minutes. Thereby, a thermosetting wafer bonding film b having a thickness of 5 μm was produced. (Example 3) 12 parts by weight of a hydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name ΕΡΡΝ-501ΗΥ), benzoic acid type phenol resin (Mingwa Chemical Co., Ltd.) ) 球 Η Η Η Η Η Η Η Η Η Η A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A , trade name: SO-E2, maximum particle diameter 1 4 μηη, average particle diameter 0.5 μιη) 40 parts by weight dissolved in mercaptoethyl ketone to prepare a binder composition having a concentration of 15% by weight. This adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polysiloxane as a release liner, and then at 130. (: Drying for 2 minutes. Thereby, a thermosetting wafer bonding film c having a thickness of 3 μm was produced. (Example 4) A trihydroxyphenyl-based epoxy resin (Nippon Chemical Co., Ltd., Ltd., 2012 20120575), · ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ ΗΥ Revitai AR3i) 12 parts by weight of spherical spheroidal dioxide as a filling material (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum particle diameter ι·4 μπι, average particle diameter 0.5 μηι) 80 parts by weight Methyl ethyl ketone was used to prepare a binder composition having a concentration of 15% by weight. The adhesive composition solution was applied to a polycrystalline oxide as a release liner, and a 38 μm thickness of the polyethylene terephthalate film was removed from the release film after the release treatment. Grab the blame for 2 minutes. Thereby, a thermosetting wafer bonding film D having a thickness of 3 μm was produced. (Example 5) 12 parts by weight of the woven phenyl group - Epoxy (Japanese stock limited company name: EPPN_Cong γ) 12 parts by weight, stupid bismuth-based phenol resin (Minghe Chemical Co., Ltd. has 7800 Η) 12重量份,二洛减幻商〇〇名·CHBMICAL 51 ^ 篁伤,作树充材_杂二氧) Co., Ltd., trade name: S0_E3, different / two Gu ATECHS strand diameter 0.9 (four) 40 parts by weight dissolution = Particle size 5. 〇qing, average grain weight (10) of the composition of the composition of the base 酉 而, and the concentration of 15. 〇 ship dissolved as a release liner _ oxygen μιη including the material of ethylene glycol vinegar 35 201200575 film The film was released from the mold, and then dried at 13 (TC for 2 minutes. Thereby, a thermosetting wafer bonding film e having a thickness of 5 μm was produced. (Example 6)

將三羥基苯基曱烷型環氧樹脂（日本化藥股份有限公 司製，商品名.ΕΡΡΝ-501ΗΥ)4重量份、苯二曱基紛酿型 苯紛樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)4重量份、丙烯酸共聚合體（N〇GAWA CHEMICAL股份有限公司製’商品名Revital AR31)12重 量份、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製，商品名：SO-E3，最大粒徑5.〇 μιη，平均粒 徑0.9 μπι)80重量份溶解於曱基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烧脫模處理後的厚度38 μιη的包括聚對苯二曱酸乙二醇醋 薄膜的脫模處理膜上，然後在130Ϊ乾燥2分鐘。藉此， 製作厚度5 μιη的熱固型晶片接合膜f。 (比較例1) 將三羥基苯基曱烷型環氧樹脂（曰本化藥股份有限公 司製’商品名：EPPN-501t[Y)12重量份、苯二甲基盼酸型 苯酚樹脂（明和化成股份有限公司製），商品名： MEH7800H)12重量份、丙烯酸共聚合體（n〇gawa CHEMICAL股份有限公司製，商品名Revitai AR31)36重 量份、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製，商品名：SO-E3，最大粒徑5.0 μιη，平均粒 36 201200575 徑0.9 μιη)40重量份溶解於曱基乙基酮，而調製出濃度15.0 重量％的接著劑組成物， 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烧脫模處理後的厚度38 μιη的包括聚對苯二曱酸乙二醇酉旨 薄膜的脫模處理膜上，然後在130°C乾燥2分鐘。藉此， 製作厚度3 μιη的熱固型晶片接合膜G。 (比較例2) 將三羥基苯基曱烷型環氧樹脂（日本化藥股份有限公 司製，商品名：ΕΡΡΝ-501ΗΥ)4重量份、苯二曱基酚醛型 苯酚樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)4重量份、丙烯酸共聚合體（n〇GAWa CHEMICAL股份有限公司製，商品名細制AR31)12重 量份、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製’商品名：SO-E3，最大粒徑5 〇 μπι，平均粒 徑0.9叫)80重量份溶解於曱基乙基_，而調製出濃度i5 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剥離襯塾的聚石夕氧 烧脫模處理後的厚度38 μιη的包括聚對苯二曱酸乙二醇妒 薄膜的脫模處理膜上，紐在13(rc乾燥2分鐘。藉此，曰 製作厚度3 μιη的熱固型晶片接合膜η。 曰 (比較例3)4 parts by weight of a trihydroxyphenyl nonane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ΕΡΡΝ-501ΗΥ), and a benzodiazepine styrene resin (manufactured by Megumi Kasei Co., Ltd.), Product name: ΜΕΗ7800Η) 4 parts by weight of an acrylic acid copolymer (manufactured by N〇GAWA CHEMICAL Co., Ltd., trade name Revital AR31), 12 parts by weight, spherical cerium oxide as a filler (manufactured by ADMATECHS Co., Ltd., trade name: SO-E3, a maximum particle diameter of 5. 〇μιη, an average particle diameter of 0.9 μm, and 80 parts by weight were dissolved in mercaptoethyl ketone to prepare a binder composition having a concentration of 15% by weight. The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film of a thickness of 38 μm after the polyoxoxime release treatment as a release liner, followed by drying at 130 Torr. 2 minutes. Thereby, a thermosetting wafer bonding film f having a thickness of 5 μm was produced. (Comparative Example 1) A trihydroxyphenyl nonane type epoxy resin (trade name: EPPN-501t [Y) manufactured by Sakamoto Chemical Co., Ltd., 12 parts by weight, benzoic acid type phenol resin (Minghe Seiko Co., Ltd., product name: MEH7800H) 36 parts by weight, acrylic acid copolymer (manufactured by N〇gawa Chemical Co., Ltd., trade name Revitai AR31) 36 parts by weight, spherical cerium oxide (ADMATECHS shares) as a filler Co., Ltd., trade name: SO-E3, maximum particle size 5.0 μιη, average particle 36 201200575 diameter 0.9 μιη) 40 parts by weight dissolved in mercapto ethyl ketone, and prepared a concentration of 15.0% by weight of the adhesive composition, will The adhesive composition solution is applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after the polyoxoxime-release treatment as a release liner, and then at 130°. C dry for 2 minutes. Thereby, a thermosetting wafer bonding film G having a thickness of 3 μm was produced. (Comparative Example 2) 4 parts by weight of a trihydroxyphenyl nonane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ΕΡΡΝ-501ΗΥ), benzodianonyl phenol type phenol resin (Minghe Chemical Co., Ltd.) (product name: ΜΕΗ7800Η) 4 parts by weight, 12 parts by weight of acrylic acid copolymer (manufactured by n〇GAWa CHEMICAL Co., Ltd., trade name: AR31), spherical cerium oxide (filled by ADMATECHS Co., Ltd.) 'Trade name: SO-E3, maximum particle size 5 〇μπι, average particle diameter 0.9) 80 parts by weight of the adhesive composition dissolved in decylethyl _ to prepare a concentration of i5 〇 by weight. Applying the solution of the adhesive composition to a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after the demolding treatment as a release liner, the button is 13 (rc was dried for 2 minutes. Thereby, a thermosetting wafer bonding film η having a thickness of 3 μm was produced by 曰. (Comparative Example 3)

” 1衣^，商品名： 將三 司製，商， 笨酚樹月； 37 201200575 MEH7800H)1；2重量份、丙烯酸共聚合體（N〇GAWA CHEMICAL股份有限公司製’商品名Revitai AR31)36重 量份、作為填充材料的球狀二氧化矽(ADMATECHS股份 有限公司製，商品名：SO-E5，最大粒徑8.〇 ，平均粒 徑1·3 μιη)40重量份溶解於甲基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烷脫模處理後的厚度38 μπι的包括聚對苯二甲酸乙二醇酯 薄膜的脫模處理膜上，然後在13〇ΐ乾燥2分鐘。藉此， 製作厚度5 μπι的熱固型晶片接合膜I。 (比較例4) 將三經基苯基曱烧型環氧樹脂（日本化藥股份有限公 司製，商品名：EPPN-501HY)4 f量份、苯二甲基祕型 苯酚樹脂（明和化成股份有限公司製），商品名： MEH7800H)4重量份、丙烯酸共聚合體_舰 CH歷CAL股份有限公司製’商品名細灿趣即重 量份、作為填紐料的較4^(ADMatechs股份 有限公司製’商品名：S0_E5，最大粒徑8 〇哗，平均粒 徑L3哗)8〇重量份溶解於甲基乙細，而調製出濃度15 〇 重量％的接著劑組成物。 、將該接著敝合物溶㈣布到作為_襯墊的聚石夕氧 烧脫模處理後的厚度38 μηι的包括聚對苯二徵乙 薄膜的脫模處理膜上，級在13叱_ 2分# ;此曰 製作厚度5 μιη的熱固型晶片接合膜了。 38 201200575 (比較例5) 將三羥基苯基甲烧型環氧樹脂（曰本化藥股份有限公 司製’商口口名.EPPN-501HY)12重量份、苯二甲基酚酸型 苯酚樹脂（明和化成股份有限公司製），商品名·· MEH7800H)12重量份、丙烯酸共聚合體（N〇^AWA CHEMICAL股份有限公司製，商品名Revitd AR31)36重 量伤、作為填充材料的球狀二氧化石夕(ADMATECHs股份 有限公司製’商品名：SO-E5 ’最大粒徑8 〇 μιη，平均粒 徑1.3 μιη)40重量份溶解於曱基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 將該接著劑組合物溶液塗布到作為剝離襯墊的聚矽氧 烷脫模處理後的厚度38 μηι的包括聚對苯二甲酸乙二醇酯 薄膜的脫模處賴上，紐在丨抓乾燥2分鐘。藉此， 製作厚度3 μιη的熱固型晶片接合膜κ。 (比較例6) 將二羥基苯基曱烷型環氧樹脂（日本化藥股份有限公 =製，商品名：ΕΡΡΝ-501ΗΥ)4重量份、苯二曱基酚醛型 苯紛樹脂（明和化成股份有限公司製），商品名： ΜΕΗ7800Η)4重量份、丙烯酸共聚合體（N〇GAWA CHEMICAL股份有限公司製，商品名Revital AR31)12重 量伤、作為填充材料的球狀二氧化；5夕(ADMATECHS股份 有限公司製，商品名：SO-E5，最大粒徑8.0 μηι，平均粒 徑1.3 μιη)80重量份溶解於曱基乙基酮，而調製出濃度15 〇 重量％的接著劑組成物。 39 201200575 將-亥接著劑組合物溶液塗布到作為讎襯整的聚石夕氧 烧脫模處理後的厚度38 μιη的包括聚對苯二甲酸乙二醇醋 薄膜的脫模處理膜上，然後在13〇ΐ乾燥2分鐘。藉此， 製作厚度3 μηι的熱固型晶片接合膜£。 (填充材料的平均粒徑以及最大粒徑的測定） 填充材料的平均粒徑以及最大粒徑的測定是使用光度 式的粒徑分布計(H0RIBA製造，裝置名稱· la_9i〇)而進 行。結果示於下述表1以及表2。然而，最大粒徑是將橫 軸作為粒徑、絲作為相對粒子數的二_表_，將以基 準=該曲線所包__作為1()()%時，從粒徑較小二 積分算出該面積的累計面積達為1〇〇%時的粒徑作為最 粒徑。 (粗糙曲線的最大剖面高度Rt) 在各實例以及比較例所製造出的熱固型晶片接合膜的 粗縫曲線的最大剖面高度Rt是根據聊刪並且使用 非接觸式表面粗链度測定裝置（日本v_公司製造， WYKO) ’於進行表射貞斜絲正後進行測量。將結果示於 下述表1以及表2^ ' (有無半導體晶圓的破損的確認） 首先，製造出切割膜》即，在厚度為1〇〇 μιη的包括 聚，烴的基材上塗布丙稀酸_著劑組成物的溶液，然後 進行乾燥，形成厚度為10哗的黏著劑層而製造出切割膜。 ,另外，上述丙烯酸類黏著劑的溶液是以如下的方式調 製而成。即，首先將丙烯酸丁酯、丙烯酸乙酯、2_羥基°丙 201200575 烯酸酯與丙烯酸以60/40/4/1的比例共聚合，而得到重量平 均分子量為800,000的丙烯酸類聚合物。接著，在此=烯 酸=聚合物中調配作為交聯劑的多官能環氧類交聯劑〇 5 重量份’作為光聚合性化合物的二季戊四醇單經基五丙烯 ^旨=重量份，作為光聚合起始劑的α經基環已基苯嗣 重里份’並且將該些化合物均勻地轉於作為有機溶劑 的曱苯。藉此，製作出上述丙烯酸類黏著劑的溶液。 然後’將脫模處理模上的熱固型晶片接合膜貼合於上 二切割模㈣㈣層上。貼合條件設定為層壓溫度贼， 2 5kgf/cm。藉&amp; ’製造出具有關於各實例以及比較例 、…、固化晶片接合膜的切割晶片接合膜。 接著，在各切接合膜的_型晶片接合膜上 3導體晶圓（直徑12英十厚度鄉岭安裝條件如下 [貼合條件] ΜΑ-30000ΙΠ 黏貼裝置：曰東精機製 黏貼速度.l〇mm/sec 黏貼壓力：〇.25MPa 黏貼時平台溫度：4〇°c 之後進行半導體晶圓的切割，而形成各5mm的晶 尺寸的半導體晶片。㈣條件如下所述。 [切割條件] 切割裝置：DISCO公司製造，dFd-6361 切割環：2-8-1 (DlSc〇公司製造） 201200575 切割速度：80mm/sec1 coat^, trade name: Three-system, quotient, phenolic tree; 37 201200575 MEH7800H)1; 2 parts by weight, acrylic acid copolymer (N〇GAWA CHEMICAL Co., Ltd. 'trade name Revitai AR31) 36 weight A spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E5, maximum particle size: 〇, average particle diameter: 1-3 μm), 40 parts by weight, dissolved in methyl ethyl ketone And a concentration of 15% by weight of the adhesive composition is prepared. The solution of the adhesive composition is applied to the thickness of 38 μm after the release treatment of the polyoxyalkylene as a release liner, including polyethylene terephthalate. The film of the alcohol ester film was released from the film, and then dried at 13 Torr for 2 minutes, thereby producing a thermosetting wafer bonding film I having a thickness of 5 μm. (Comparative Example 4) A triphenyl phenyl group was produced. Oxygen resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY) 4 parts by weight, benzodimethyl form-type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 4 parts by weight, acrylic acid Copolymers_ship CH calendar CAL Co., Ltd. 'The name of the product is the weight of the product, and the weight of the product is 4^ (product name: S0_E5 made by ADMatechs Co., Ltd., maximum particle size 8 〇哗, average particle size L3 哗) 8 parts by weight dissolved in A The base composition is finely prepared to prepare a binder composition having a concentration of 15% by weight. The paste (4) is dissolved in the thickness of 38 μηι after the demolding treatment as a liner. On the release film of the benzodiazepine film, the film was graded at 13叱_ 2 minutes#; this was made into a thermosetting wafer bonding film with a thickness of 5 μm. 38 201200575 (Comparative Example 5) Trihydroxyphenyl group Burnt type epoxy resin ("Sakaguchi name. EPPN-501HY" manufactured by Sakamoto Chemical Co., Ltd.) 12 parts by weight, benzene phenolic acid type phenol resin (made by Minghe Chemical Co., Ltd.), trade name · MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by N〇^AWA CHEMICAL Co., Ltd., trade name Revitd AR31) 36 weight-damaged spherical spheroidal dioxide as a filler (ADMATECHs Co., Ltd.'s trade name: SO -E5 'Maximum particle size 8 〇μιη, average particle size 1.3 μιη 40 parts by weight of the adhesive composition dissolved in mercaptoethyl ketone to prepare a concentration of 15% by weight. The thickness of the adhesive composition solution after application to the polyoxirane as a release liner A 38 μm of a release film comprising a polyethylene terephthalate film was applied, and the coating was dried for 2 minutes, thereby producing a thermosetting wafer bonding film κ having a thickness of 3 μm. (Comparative Example 6) 4 parts by weight of a dihydroxyphenyl nonane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: ΕΡΡΝ-501ΗΥ), benzophenanthryl phenol type benzene resin (Minghe Chemical Co., Ltd.) Co., Ltd., trade name: ΜΕΗ7800Η) 4 parts by weight, acrylic acid copolymer (N〇GAWA CHEMICAL Co., Ltd., trade name Revital AR31) 12 weight damage, spherical dioxide as a filling material; 5 eve (ADMATECHS shares Co., Ltd., trade name: SO-E5, maximum particle size 8.0 μηι, average particle diameter 1.3 μιη) 80 parts by weight dissolved in mercaptoethyl ketone to prepare a binder composition having a concentration of 15% by weight. 39 201200575 Applying a solution of the composition of the composition of the adhesive to a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after the demolding treatment as a lining, and then Dry at 13 2 for 2 minutes. Thereby, a thermosetting wafer bonding film having a thickness of 3 μm is produced. (Measurement of Average Particle Diameter and Maximum Particle Diameter of Filler) The measurement of the average particle diameter and the maximum particle diameter of the filler was carried out using a photometric particle size distribution meter (manufactured by HORIBA, device name la_9i〇). The results are shown in Tables 1 and 2 below. However, the maximum particle diameter is a two-dimensional table in which the horizontal axis is the particle diameter and the number of the filaments is the relative particle number, and when the reference = the curve is included as __ as 1 () ()%, the particle size is smaller than two points. The particle diameter when the cumulative area of the area was 1% by weight was calculated as the maximum particle diameter. (Maximum section height Rt of the roughness curve) The maximum profile height Rt of the crevice curve of the thermosetting wafer bonding film manufactured by each of the examples and the comparative examples is based on the use of the non-contact surface roughness measuring device ( Made by Japan v_Company, WYKO) 'Measure the measurement after the slanting of the slanting wire. The results are shown in Table 1 below and Table 2^' (Confirmation of damage of semiconductor wafers) First, a dicing film is produced, that is, a substrate coated with a poly- and a hydrocarbon having a thickness of 1 μm is coated. A solution of the dilute acid-reagent composition was then dried to form an adhesive layer having a thickness of 10 Å to produce a dicing film. Further, the solution of the above acrylic adhesive was prepared in the following manner. Namely, butyl acrylate, ethyl acrylate, 2-hydroxyl C, 201200575 enoate and acrylic acid were first copolymerized at a ratio of 60/40/4/1 to obtain an acrylic polymer having a weight average molecular weight of 800,000. Next, in this = olefinic acid = polymer, a polyfunctional epoxy-based crosslinking agent 作为 5 parts by weight as a crosslinking agent, and dipentaerythritol as a photopolymerizable compound are used as a photopolymerizable compound. The α of the photopolymerization initiator was transferred to the base quinone quinone and the compounds were uniformly transferred to terpene as an organic solvent. Thereby, a solution of the above acrylic adhesive was produced. Then, the thermosetting wafer bonding film on the release mold was attached to the (four) (four) layer of the upper two-cut mold. The bonding condition was set to a lamination temperature thief, 25 kgf/cm. A dicing wafer bonding film having a respective example and a comparative example, ..., a cured wafer bonding film was produced by &amp;&apos;. Next, a 3-conductor wafer on a _-type wafer bonding film of each of the diced bonding films (the diameter of 12 Å is ten tens of ridges. The mounting conditions are as follows [adhesion conditions] ΜΑ-30000 黏 Adhesive device: 曰东精机构 Adhesive speed. l〇mm /sec Adhesive pressure: 〇.25MPa When the paste is pasted, the temperature of the substrate is 4〇°c, and then the semiconductor wafer is cut to form a semiconductor wafer of 5mm crystal size. (4) The conditions are as follows. [Cutting conditions] Cutting device: DISCO Made by the company, dFd-6361 cutting ring: 2-8-1 (manufactured by DlSc〇) 201200575 Cutting speed: 80mm/sec

切割刀片：DISCO公司製造2050HEDD 切割刀片轉速：40,000rpm 刀片向度：0.170mm 切斷方式：A模式/階段切斷(step cut) 進而將各切割晶片接合膜拉伸，使各晶片間成為預定 間隔的方式進行擴張（expend)步驟。之後，以自各切割 晶片接合膜的基材側利用針頂起的方式’連同晶片接合膜 將半導體晶片拾取。拾取條件如下所述。 [拾取條件] 針：總長10mm、直徑〇.7mm、銳角度15deg、尖端 R350 μιη 針數：5根 針頂起量：350 μιη 針頂起速度：5mm/sec 缚夾(collet)保持時間：2〇〇msec 擴張量：3mm 接著’將經拾取的半導體晶片在引線框上晶片接合， 並且確認此時的半導體晶片的破損。結果示於下述表1以 及表2。然而’晶片接合的條件如下所述。 [晶片接合條件] 晶片接合溫度：12〇。〇 接合壓力：O.IMPa 接合時間：lsec 42 201200575 後固化：在150°C下1小時 (結果） 如自下述表1和表2中得知，如同本發明各實例的熱 固型晶片接合膜，其厚度Υ(μιη)與填充材料的最大粒徑 Χ(μιη)的比值Χ/Υ(-)為1以下，則可使半導體晶片不破損 的方式在引線框上晶片接合。另一方面，比值Χ/Υ(-)超過 1的各比較例的熱固型晶片接合膜，則在晶片接合時在半 導體晶片確認有破損。 43 201200575 Ιταεκοοε 實施例6 晶片接合膜F in iT) § r^H m CN 碟 實施例5 晶片接合膜Ε ο f _ O) #- 實施例4 晶片接合膜D 寸· m g »n o i—H oi 4ί 實施例3 晶片接合膜C 寸 m ο in O I&gt; i-H 實施例2 晶片接合膜Β 寸 « m g rn O O) 碟 實施例1 晶片接合膜A ρ··Η ο rn o &lt;〇· 1 &lt; 啦貧 ^ 1 实X β 4 邾铡 戚φ ^ w 实_ jv· _ 責w β φΐ X/Y比值㈠ 最大剖面高度 Rt(fim) 半導體晶片的 破損 201200575 J-aie (N&lt; 比較例6 晶片接合膜L 〇〇 CO § ο &lt;Ν (N rn 比較例5 晶片接合膜K 〇〇 ΓΟ 〇 卜 CN 〇\ (N 比較例4 晶片接合膜J 〇〇 in § 卜 r—Η i—H to 比較例3 晶片接合膜I 〇〇 〇 τ-Η 卜 r4 比較例2 晶片接合膜Η ΓΟ § VO 〇〇 &lt;N 比較例1 晶片接合膜G m 〇 &lt;N 皭？ 实X 友肆 球铡 ^ &lt; 11 τ m 域《 X/Y比值(-) 最大剖面高度 Rt(fim) 半導體晶片的 破損 201200575 本發明Ί㈣已以實施例揭露如上，然其並非用以限定 本伽之術領財具有通料财，在不脫離 【圖式簡單二‘視後附之申請專利範圍所界定者為準。 剖面=2表示本發實施鶴的切割w接合膜的 面示=衫示上述實施型態的[切割晶片接合膜的剖 裝半科過本伽的—實施賴的^接合膜安 導體日曰片的例子的剖面示意圖。 的例述晶片接合膜三維安裝半導體晶片 :唯使用上述晶片接合膜’隔著隔片（叩朦） 7袈兩個半導體晶片的例子的剖面示意圖。 L主要元件符號說明】 1 :基材 2.黏著劑層 劑層中與半導體晶片黏貼部分對應的部分 2b .黏合劑層的其他部分 L、3日:晶片接合膜(熱固型晶片接合膜） •，片接合膜中與半導體晶圓黏貼的部分 b.晶片接合膜中的其他部分 4:半導體晶圓 46 201200575 -'' £--- 5、15 :半導體晶片 6 :被黏體 7 :接合線 8:密封樹脂 9 :隔片 10、11 :切割晶片接合膜Cutting blade: manufactured by DISCO 2050 HEDD Cutting blade Speed: 40,000 rpm Blade orientation: 0.170 mm Cutting method: A mode / stage cut (step cut) Further, each dicing wafer bonding film is stretched to make each wafer a predetermined interval The way to expand (expend) steps. Thereafter, the semiconductor wafer was picked up together with the wafer bonding film in a manner of ejecting from the substrate side of each of the dicing wafer bonding films. The pickup conditions are as follows. [Picking conditions] Needle: total length 10 mm, diameter 〇.7 mm, sharp angle 15 deg, tip R350 μιη Number of stitches: 5 needle tops: 350 μιη Needle jacking speed: 5 mm/sec Clamp retention time: 2 〇〇msec expansion amount: 3 mm Next, the semiconductor wafer to be picked up was wafer-bonded on the lead frame, and the breakage of the semiconductor wafer at this time was confirmed. The results are shown in Table 1 below and Table 2. However, the conditions for wafer bonding are as follows. [Wafer bonding conditions] Wafer bonding temperature: 12 Å. 〇 Engagement pressure: O.IMPa Bonding time: lsec 42 201200575 Post-cure: 1 hour at 150 ° C (result) As seen from Tables 1 and 2 below, thermosetting wafer bonding as in the examples of the present invention When the ratio Χ/Υ(-) of the film ,(μιη) to the maximum particle diameter Χ(μιη) of the filler is 1 or less, the semiconductor wafer can be bonded to the lead frame without being damaged. On the other hand, in the thermosetting wafer bonding film of each comparative example having a ratio Χ/Υ(-) of more than 1, the semiconductor wafer was damaged at the time of wafer bonding. 43 201200575 Ιταεκοοε Example 6 Wafer Bonding Film F in iT) § r^H m CN Disc Example 5 Wafer Bonding Film ο ο f _ O) #- Example 4 Wafer Bonding Film D Inch·mg »noi—H oi 4ί Example 3 Wafer bonding film C inch m ο in O I&gt; iH Example 2 Wafer bonding film « inch «mg rn OO) Disc Example 1 Wafer bonding film A ρ··Η ο rn o &lt;〇· 1 &lt; Lean ^ 1 Real X β 4 邾铡戚 φ ^ w Real _ jv · _ w w β φ ΐ X / Y ratio (a) Maximum profile height Rt (fim) Semiconductor wafer damage 201200575 J-aie (N&lt; Comparative Example 6 wafer Bonding film L 〇〇CO § ο &lt;Ν (N rn Comparative Example 5 Wafer Bonding Film K 〇〇ΓΟ 〇 CN CN 〇\ (N Comparative Example 4 Wafer Bonding Film J 〇〇in § 卜r-Ηi-H to Comparative Example 3 Wafer Bonding Film I 〇〇〇τ-Η r4 Comparative Example 2 Wafer Bonding Film Η § VO 〇〇 &lt;N Comparative Example 1 Wafer Bonding Film G m 〇&lt;N 皭? Real X 肆球肆^ &lt; 11 τ m domain "X/Y ratio (-) maximum profile height Rt (fim) semiconductor wafer breakage 201200575 The present invention (four) has been The example is disclosed above, but it is not intended to limit the wealth of the law. It is not subject to the definition of the patent application scope attached to the [Figure 2]. Section = 2 indicates the hair The surface of the dicing w-bonding film of the crane is shown in the above-mentioned embodiment. [The cross-sectional view of the dicing die-cutting dicing of the dicing wafer bonding film is performed. The wafer bonding film is three-dimensionally mounted on a semiconductor wafer: a cross-sectional view of an example in which two semiconductor wafers are interposed between the wafer bonding films and the spacers. L main component symbol description] 1 : Substrate 2. Part 2b of the adhesive layer layer corresponding to the adhesion portion of the semiconductor wafer. Other portions of the adhesive layer L, 3: wafer bonding film (thermosetting wafer bonding film) •, the bonding film to the semiconductor wafer Part b. Other portion in the wafer bonding film 4: Semiconductor wafer 46 201200575 - '' £--- 5, 15: Semiconductor wafer 6: adherend 7: bonding wire 8: sealing resin 9: spacers 10, 11 : Cutting wafer bonding film

Claims (1)

201200575 七、申請專利範圍： 1. 一種熱固型晶片接合膜，其含有接著劑組成物以及 包含微粒子的填充材料’其中將上述熱固型晶片接合膜的 厚度设為Υ(μηι)，且將上述填充材料的最大粒徑設為x(^m) 時的比值X/Y㈠為1以下。 2. 如申請專利範圍第丨項所述之熱固型晶片接合 膜’其中上述Χ(μιη)是在〇·〇5 μιη〜5 μη!的範圍内。 3. 如申請專利範圍第1項所述之熱固型晶片接合 膜其中上述Υ(μιη)是在1 gm〜5 的範圍内。 4. 如申請專利範圍第1項所述之熱固型晶片接合 膜二其中相對於上述接著劑組成物1〇〇重量份，上述填充 材料的含有量是在i重量份〜8〇重量份的範圍内。 5. 如申請專利範圍第1項所述之熱固型晶片接合 膜二其中相對於上述接著劑組成物100體積份，上述填充 材料的含有量是在1體積份〜40體積份的範圍内。 6. 如申請專利範圍第1項至第5項中任一項所述之熱 固型晶片接合臈，其中上述熱固型晶片接合膜中粗糙度曲 線的最大剖面尚度似是在〇 1 〜2 3 的範圍内。 7丄一種切割晶片接合膜，其於切割膜上積層有如申請 專利Ιϋ第1項所述之熱[㈣晶片接合膜。 8’ 一種半導體裝置的製造方法，使用如申請專利範圍 第7項所述之切割晶片接合膜，該半導體裝置的製造方法 包括： 貼σ步驟’將上述熱固型晶片接合膜作為貼合面，並 48 201200575 半3::的背面貼合上述切割晶片接合獏; 合膜:起_而圓連同上述熱固型晶片接 連同上’將上料導體晶片自上述切割晶片接合膜 連门^述熱固型晶片接合膜-起拾取；以及 、晶片。接合步驟，通過上述熱固型晶片接合膜，並且在 溫度賦〜赋、接合壓力着a〜O.SMPa、接合時間 〇.1秒〜5秒的範圍内的條件下，將上述半導體晶片晶片接 合在被黏體上。 49201200575 VII. Patent Application Range: 1. A thermosetting wafer bonding film comprising an adhesive composition and a filling material containing microparticles, wherein the thickness of the above-mentioned thermosetting wafer bonding film is set to Υ(μηι), and When the maximum particle diameter of the filler is x (^m), the ratio X/Y (one) is 1 or less. 2. The thermosetting wafer bonding film as described in claim 2, wherein the above Χ(μιη) is in the range of 〇·〇5 μιη to 5 μη!. 3. The thermosetting wafer bonding film according to claim 1, wherein the above Υ(μιη) is in the range of 1 gm 〜5. 4. The thermosetting wafer bonding film according to Item 1, wherein the content of the filler is from i parts by weight to 8 parts by weight based on 1 part by weight of the adhesive composition. Within the scope. 5. The thermosetting wafer bonding film according to the first aspect of the invention, wherein the content of the filler is in the range of 1 part by volume to 40 parts by volume with respect to 100 parts by volume of the above-mentioned adhesive composition. 6. The thermosetting wafer bonded crucible according to any one of claims 1 to 5, wherein the maximum profile of the roughness curve in the thermosetting wafer bonding film is 〇1 〜1 Within the range of 2 3 . A dicing wafer bonding film which is laminated on a dicing film with a heat [(4) wafer bonding film as described in claim 1]. A manufacturing method of a semiconductor device using the dicing wafer bonding film according to claim 7, wherein the method of manufacturing the semiconductor device comprises: affixing the σ step to use the thermosetting wafer bonding film as a bonding surface, And 48 201200575 half 3:: the back side of the above-mentioned dicing wafer bonding 貘; film: _ and the round together with the above-mentioned thermosetting type wafer connection together with the above - the feeding conductor wafer from the dicing wafer bonding film is connected to the door Wafer bonding film - pick up; and, wafer. In the bonding step, the semiconductor wafer is bonded by the thermosetting wafer bonding film under the conditions of temperature setting, bonding pressure a~O.SMPa, bonding time 11 sec to 5 sec. On the adherend. 49
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