CN102931215A - IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof - Google Patents
IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof Download PDFInfo
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- CN102931215A CN102931215A CN2011102290382A CN201110229038A CN102931215A CN 102931215 A CN102931215 A CN 102931215A CN 2011102290382 A CN2011102290382 A CN 2011102290382A CN 201110229038 A CN201110229038 A CN 201110229038A CN 102931215 A CN102931215 A CN 102931215A
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Abstract
The invention discloses an IGBT (Insulated Gate Bipolar Transistor) structure integrated with a low leakage-current Schottky diode. The IGBT structure comprises an IGBT, wherein the top parts of N-type drift regions of the IGBT comprise regions covered by polysilicon gates and regions not covered by the polysilicon gates; one or a plurality of P-type doped regions are arranged at the lower part of the regions not covered by the polysilicon gates, and the N-type drift regions free from P-type doping are arranged in the rest regions; and the top parts of the N-type drift regions free from P-type doping form Schottky contact. According to the invention, the low leakage-current Schottky diode is integrated in the IGBT, when current of the IGBT is conducted from an emitting electrode to a collecting electrode, freewheeling function can be achieved, so that the switching speed is improved, and the switching power consumption is reduced; and when the conduction of current of the IGBT from the collecting electrode to the emitting electrode is turned off, a bypass can be additionally provided for reverse recovery of minority carriers, so that the reverse recovery time for freewheeling turn-off is greatly reduced. The invention further discloses a method for preparing the IGBT structure integrated with the low leakage-current Schottky diode.
Description
Technical field
The present invention relates to a kind of igbt structure, be specifically related to a kind of igbt structure that is integrated with low electric leakage Schottky diode.The invention still further relates to a kind of preparation method who is integrated with the igbt structure of low electric leakage Schottky diode.
Background technology
Igbt (being called for short IGBT) is the combination of metal-oxide semiconductor (MOS) (being called for short MOS) and bipolar transistor (also being triode).Existing IGBT is (front metal at contact top and the back metal of substrate bottom are not shown) as shown in Figure 1, and the top of N-type drift region is all covered by polysilicon gate.This structure is fit to high withstand voltage high-power applications because bipolar transistor has very low saturation voltage when the large current lead-through, compares with MOS, and device power consumption is very little during current lead-through greatly.
But because this bipolar transistor structure is dominated conduction by minority carrier (being called for short few son), therefore when device turn-offed, few sub-reverse recovery time was long, thereby so that devices switch speed is slack-off, the switch power consumption increases.
In addition, existing igbt compares with MOS in addition that a shortcoming is exactly not have intrinsic parasitic anti-paralleled diode, this so that it some applications (such as inverter) must with a diodes in parallel use that plays the afterflow effect.
Summary of the invention
Technical problem to be solved by this invention provides a kind of igbt structure that is integrated with low electric leakage Schottky diode, and it can make switching speed improve the switch power-dissipation-reduced.
For solving the problems of the technologies described above, the technical solution that the present invention is integrated with the igbt structure of low electric leakage Schottky diode is:
Comprise igbt, the top of the N-type drift region of described igbt comprises the zone that is covered by polysilicon gate and the zone that is not covered by polysilicon gate; There are one or polylith P type doped region in the below, zone that is not covered by polysilicon gate, all the other N drift regions for there not being the P type to mix, zone; P type doped region top links to each other with the emitter of IGBT with front metal by ohmic contact; Do not have the top of the N drift region of P type doping to form Schottky contacts, and link to each other with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode links to each other with the collector electrode of IGBT by back metal.
The negative electrode of described Schottky diode is connected with back metal by N-type heavy doping, and the collector electrode of IGBT also is connected with back metal by the heavy doping of P type.
The present invention also provides a kind of preparation method who is integrated with the igbt structure of low electric leakage Schottky diode, and its technical solution is, may further comprise the steps:
The first step according to existing IGBT technique, forms IGBT grid, tagma and emitter region;
Second step, resist coating, photoetching;
In the 3rd step, remove a part of polysilicon that top, N drift region covers by doing to carve;
The 4th step, the deposit interlayer film, photoetching, the dried interlayer film of carving form contact hole, remove photoresist;
The 5th step, resist coating, photoetching, the follow-up zone top that will form Schottky contacts is covered by photoresist, P type ion beam is carried out in the zone that will form ohmic contact inject;
The 6th step, remove photoresist, carry out thermal annealing, activate P type doping ion;
In the 7th step, the metal buried regions that deposit can form with the N-type silicon face Schottky contacts carries out thermal annealing, forms ohmic contact at P type top, forms Schottky contacts at the top, N drift region adjacent with the P type simultaneously;
Metal in described the 7th step is that titanium, cobalt or other can form with silicon the metal of Schottky contacts.
The 8th step, subsequent treatment.
The method of described the 8th step subsequent treatment is: depositing metal fills up contact hole, carves back quarter or cmp is removed surperficial excess metal by doing; The deposit front metal forms the front metal figure by photoetching, the dried quarter; Then at the substrate back resist coating, photoetching is carried out heavy doping boron Implantation to the back side; Remove afterwards photoresist, thermal annealing activates and forms back side P type doped region, forms overleaf at last back metal, forms collector electrode-emitter device architecture in parallel with Schottky diode of IGBT.
The technique effect that the present invention can reach is:
The present invention will hang down the electric leakage Schottky diode and be integrated in the igbt, when IGBT electric current during from emitter to the collector electrode conducting, can play the afterflow effect, thereby make switching speed improve the switch power-dissipation-reduced; When the IGBT electric current turn-offs from collector electrode to the emitter conducting, can provide a bypass more for the reverse recovery of minority carrier, thereby so that greatly reduce the switching speed raising reverse recovery time that afterflow is turn-offed.
Structure of the present invention is also so that the reverse leakage of Schottky diode is very little.
The invention enables device when using, to need not again an external diodes in parallel.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the schematic diagram of prior art igbt structure;
Fig. 2 is the vertical view that the present invention is integrated with the igbt structure of low electric leakage Schottky diode, the surface of silicon that only demonstrates polysilicon and do not covered by polysilicon among the figure;
Fig. 3 be among Fig. 2 along the profile of A-A ', the front metal at contact top and the back metal of substrate bottom are not shown;
Fig. 4 be among Fig. 2 along the profile of B-B ', the front metal at contact top and the back metal of substrate bottom are not shown;
Fig. 5 be among Fig. 2 along the profile of C-C ', the front metal at contact top and the back metal of substrate bottom are not shown;
Fig. 6 to Figure 12 is and the corresponding structural representation of method step of the present invention.
Embodiment
It is extremely shown in Figure 5 that the present invention is integrated with igbt structure such as Fig. 2 of hanging down the electric leakage Schottky diode, comprise igbt, the top of the N-type drift region of igbt comprises the zone that is covered by polysilicon gate and the zone that is not covered by polysilicon gate (region division that is not covered by polysilicon gate is between two zones that covered by polysilicon gate); There are one or polylith P type doped region in the below, zone that is not covered by polysilicon gate, the N drift region of all the other zones (being other zone that is not covered by polysilicon gate beyond the P type doped region) for there not being the P type to mix;
P type doped region top links to each other with the emitter of IGBT with front metal by ohmic contact; Do not have the top of the N drift region of P type doping to form Schottky contacts, and link to each other with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode links to each other with the collector electrode of IGBT by back metal;
The negative electrode of Schottky diode is connected with back metal by N-type heavy doping, and the collector electrode of IGBT also is connected with back metal by the heavy doping of P type.
Schottky diode of the present invention is by many sons (electronics) conduction, and its use in parallel with IGBT when afterflow, is lacked son absorption (diffusion) and greatly reduced, and greatly reduce reverse recovery time; And when the electric current that flows to emitter current from collector electrode turn-offs, for few son provides additional bypass, thereby greatly reduce few sub-reverse recovery time.
Schottky contacts and p type island region among the present invention are adjacent, and when oppositely ending, N district electronics is exhausted by P type hole, therefore leak electricity low.
Preparation method of the present invention may further comprise the steps:
1, be illustrated in figure 6 as sectional view, AA ' is identical with BB ' cross section; According to the IGBT technique of prior art, form polysilicon gate, tagma and source region at N-type light dope substrate, carry out N-type heavy doping at substrate back, form IGBT grid, tagma and emitter region;
2, be illustrated in figure 7 as sectional view, AA ' is identical with BB ' cross section; Resist coating, photoetching;
3, be illustrated in figure 8 as sectional view, AA ' is identical with BB ' cross section; Remove a part of polysilicon that top, N drift region covers by doing to carve;
4, be illustrated in figure 9 as sectional view, AA ' is identical with BB ' cross section; The deposit interlayer film, photoetching, the dried interlayer film of carving form contact hole, remove photoresist;
5, resist coating, photoetching, the follow-up zone top that will form Schottky contacts is covered by photoresist, P type ion beam is carried out in the zone that will form ohmic contact inject; Be depicted as AA ' sectional view such as Figure 10 A, be depicted as BB ' sectional view such as Figure 10 B, be depicted as CC ' sectional view such as Figure 10 C;
6, remove photoresist, carry out thermal annealing, activate P type doping ion;
7, deposit can form with the N-type silicon face metal (such as titanium, but the being not limited to titanium) buried regions of Schottky contacts, carries out thermal annealing, forms ohmic contact at P type top, forms Schottky contacts at the top, N drift region adjacent with the P type simultaneously; Be depicted as AA ' sectional view such as Figure 11 A, be depicted as BB ' sectional view such as Figure 11 B, be depicted as CC ' sectional view such as Figure 11 C;
8, subsequent treatment; According to the method for existing discrete device, depositing metal fills up contact hole, carves back quarter or cmp is removed surperficial excess metal by doing; The deposit front metal forms the front metal figure by photoetching, the dried quarter; Then at the substrate back resist coating, photoetching is carried out heavy doping boron Implantation to the back side, is depicted as AA ' sectional view such as Figure 12 A, is depicted as BB ' sectional view such as Figure 12 B; Remove afterwards photoresist, thermal annealing activates and forms back side P type doped region, forms overleaf at last back metal, forms collector electrode-emitter device architecture in parallel with Schottky diode of IGBT.
Claims (5)
1. one kind is integrated with the igbt structure of hanging down the electric leakage Schottky diode, comprise igbt, it is characterized in that: the top of the N-type drift region of described igbt comprises the zone that is covered by polysilicon gate and the zone that is not covered by polysilicon gate; There are one or polylith P type doped region in the below, zone that is not covered by polysilicon gate, all the other N drift regions for there not being the P type to mix, zone; P type doped region top links to each other with the emitter of IGBT with front metal by ohmic contact; Do not have the top of the N drift region of P type doping to form Schottky contacts, and link to each other with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode links to each other with the collector electrode of IGBT by back metal.
2. the igbt structure that is integrated with low electric leakage Schottky diode according to claim 1, it is characterized in that: the negative electrode of described Schottky diode is connected with back metal by N-type heavy doping, and the collector electrode of IGBT also is connected with back metal by the heavy doping of P type.
3. a preparation method who is integrated with the igbt structure of low electric leakage Schottky diode claimed in claim 1 is characterized in that, may further comprise the steps:
The first step according to IGBT technique, forms IGBT grid, tagma and emitter region;
Second step, resist coating, photoetching;
In the 3rd step, remove a part of polysilicon that top, N drift region covers by doing to carve;
The 4th step, the deposit interlayer film, photoetching, the dried interlayer film of carving form contact hole, remove photoresist;
The 5th step, resist coating, photoetching, the follow-up zone top that will form Schottky contacts is covered by photoresist, P type ion beam is carried out in the zone that will form ohmic contact inject;
The 6th step, remove photoresist, carry out thermal annealing, activate P type doping ion;
In the 7th step, the metal buried regions that deposit can form with the N-type silicon face Schottky contacts carries out thermal annealing, forms ohmic contact at P type top, forms Schottky contacts at the top, N drift region adjacent with the P type simultaneously;
The 8th step, subsequent treatment.
4. the preparation method who is integrated with the igbt structure of low electric leakage Schottky diode according to claim 3 is characterized in that: the metal in described the 7th step is that titanium, cobalt or other can form with silicon the metal of Schottky contacts.
5. the preparation method who is integrated with the igbt structure of low electric leakage Schottky diode according to claim 3, it is characterized in that: the method for described the 8th step subsequent treatment is: depositing metal fills up contact hole, carves back quarter or cmp is removed surperficial excess metal by doing; The deposit front metal forms the front metal figure by photoetching, the dried quarter; Then at the substrate back resist coating, photoetching is carried out heavy doping boron Implantation to the back side; Remove afterwards photoresist, thermal annealing activates and forms back side P type doped region, forms overleaf at last back metal, forms collector electrode-emitter device architecture in parallel with Schottky diode of IGBT.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755303A (en) * | 2017-11-01 | 2019-05-14 | 苏州东微半导体有限公司 | A kind of IGBT power device |
| CN115832039A (en) * | 2022-12-09 | 2023-03-21 | 宁波达新半导体有限公司 | Reverse conducting IGBT device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468449A (en) * | 2000-10-06 | 2004-01-14 | 通用半导体公司 | Trench dmos transistor with embedded trench schottky rectifier |
| US20070034901A1 (en) * | 2005-02-11 | 2007-02-15 | Alpha & Omega Semiconductor, Ltd | Trench junction barrier controlled Schottky |
| CN101223647A (en) * | 2005-05-11 | 2008-07-16 | 克里公司 | Silicon carbide junction barrier schottky diodes with suppressed minority carrier injection |
| CN101404283A (en) * | 2007-10-01 | 2009-04-08 | 万国半导体股份有限公司 | Planar MOSFET integrated with schottky diode and its layout method |
| US20100320538A1 (en) * | 2007-08-29 | 2010-12-23 | Rohm Co., Ltd | Semiconductor device |
| TW201108394A (en) * | 2009-08-05 | 2011-03-01 | Bosch Gmbh Robert | Field effect transistor with integrated tjbs diode |
| CN102005452A (en) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | Integrated schottky diode in high voltage semiconductor device |
| CN102074587A (en) * | 2009-10-30 | 2011-05-25 | 万国半导体股份有限公司 | Gallium nitride semiconductor device with improved termination scheme |
-
2011
- 2011-08-11 CN CN201110229038.2A patent/CN102931215B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468449A (en) * | 2000-10-06 | 2004-01-14 | 通用半导体公司 | Trench dmos transistor with embedded trench schottky rectifier |
| US20070034901A1 (en) * | 2005-02-11 | 2007-02-15 | Alpha & Omega Semiconductor, Ltd | Trench junction barrier controlled Schottky |
| CN101223647A (en) * | 2005-05-11 | 2008-07-16 | 克里公司 | Silicon carbide junction barrier schottky diodes with suppressed minority carrier injection |
| CN101523583A (en) * | 2006-09-30 | 2009-09-02 | 万国半导体股份有限公司 | Trench junction barrier controlled schottky |
| US20100320538A1 (en) * | 2007-08-29 | 2010-12-23 | Rohm Co., Ltd | Semiconductor device |
| CN101404283A (en) * | 2007-10-01 | 2009-04-08 | 万国半导体股份有限公司 | Planar MOSFET integrated with schottky diode and its layout method |
| TW201108394A (en) * | 2009-08-05 | 2011-03-01 | Bosch Gmbh Robert | Field effect transistor with integrated tjbs diode |
| CN102005452A (en) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | Integrated schottky diode in high voltage semiconductor device |
| CN102074587A (en) * | 2009-10-30 | 2011-05-25 | 万国半导体股份有限公司 | Gallium nitride semiconductor device with improved termination scheme |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755303A (en) * | 2017-11-01 | 2019-05-14 | 苏州东微半导体有限公司 | A kind of IGBT power device |
| CN115832039A (en) * | 2022-12-09 | 2023-03-21 | 宁波达新半导体有限公司 | Reverse conducting IGBT device |
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