CN102931215B - IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof - Google Patents
IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an IGBT (Insulated Gate Bipolar Transistor) structure integrated with a low leakage-current Schottky diode. The IGBT structure comprises an IGBT, wherein the top parts of N-type drift regions of the IGBT comprise regions covered by polysilicon gates and regions not covered by the polysilicon gates; one or a plurality of P-type doped regions are arranged at the lower part of the regions not covered by the polysilicon gates, and the N-type drift regions free from P-type doping are arranged in the rest regions; and the top parts of the N-type drift regions free from P-type doping form Schottky contact. According to the invention, the low leakage-current Schottky diode is integrated in the IGBT, when current of the IGBT is conducted from an emitting electrode to a collecting electrode, freewheeling function can be achieved, so that the switching speed is improved, and the switching power consumption is reduced; and when the conduction of current of the IGBT from the collecting electrode to the emitting electrode is turned off, a bypass can be additionally provided for reverse recovery of minority carriers, so that the reverse recovery time for freewheeling turn-off is greatly reduced. The invention further discloses a method for preparing the IGBT structure integrated with the low leakage-current Schottky diode.
Description
Technical field
The present invention relates to a kind of igbt structure, be specifically related to a kind of igbt structure being integrated with Low dark curient Schottky diode.The invention still further relates to a kind of preparation method being integrated with the igbt structure of Low dark curient Schottky diode.
Background technology
Igbt (being called for short IGBT) is the combination of metal-oxide semiconductor (MOS) (being called for short MOS) and bipolar transistor (being also triode).Existing IGBT is (back metal of the contact front metal at top and substrate bottom is not shown) as shown in Figure 1, and the top of N-type drift region is all covered by polysilicon gate.This structure has very low saturation voltage and is applicable to high withstand voltage high-power applications when big current conducting because of bipolar transistor, and compared with MOS, during big current conducting, device power consumption is very little.
But because this bipolar transistor structure is by minority carrier (being called for short few son) leading conduction, therefore when device turns off, few sub-reverse recovery time is long, thus makes devices switch slow, and switching power loss increases.
In addition, existing igbt also has a shortcoming to be exactly do not have intrinsic parasitic anti-paralleled diode compared with MOS, and this diodes in parallel making it must play afterflow effect with one in some applications (as inverter) uses.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of igbt structure being integrated with Low dark curient Schottky diode, and it can make switching speed improve, and switching power loss reduces.
For solving the problems of the technologies described above, the technical solution that the present invention is integrated with the igbt structure of Low dark curient Schottky diode is:
Comprise igbt, the top of the N-type drift region of described igbt comprises the region that covered by polysilicon gate and not by region that polysilicon gate covers; Have one piece or polylith P type doped region below the region do not covered by polysilicon gate, all the other regions are the N drift region not having P type to adulterate; Top, P type doped region is connected with the emitter of IGBT with front metal by ohmic contact; Schottky contacts is formed on the top of the N drift region not having P type to adulterate, and is connected with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode is connected with the collector electrode of IGBT by back metal.
The negative electrode of described Schottky diode is connected with back metal by N-type heavy doping, and the collector electrode of IGBT is also connected with back metal by the heavy doping of P type.
The present invention also provides a kind of preparation method being integrated with the igbt structure of Low dark curient Schottky diode, and its technical solution is, comprises the following steps:
The first step, according to existing IGBT technique, forms IGBT grid, tagma and emitter region;
Second step, resist coating, photoetching;
3rd step, carves by dry a part of polysilicon removed top, N drift region and cover;
4th step, deposit interlayer film, photoetching, dry carves interlayer film, forms contact hole, removes photoresist;
5th step, resist coating, photoetching, the follow-up overlying regions that will form Schottky contacts is covered by photoresist, carries out P type ion beam mutation to the region that will form ohmic contact;
6th step, removes photoresist, carries out thermal annealing, activates P type Doped ions;
7th step, deposit can form the metal buried regions of Schottky contacts with N-type silicon face, carries out thermal annealing, forms ohmic contact at P type top, forms Schottky contacts at the top, N drift region adjacent with P type simultaneously;
Metal in described 7th step is titanium, cobalt or other can form the metal of Schottky contacts with silicon.
8th step, subsequent treatment.
The method of described 8th step subsequent treatment is: depositing metal fills up contact hole, by returning quarter or cmp removal excess surface metal dry quarter; Deposit front metal, forms front metal pattern by photoetching, dry quarter; Then at substrate back resist coating, photoetching, carries out heavy doping boron ion implantation to the back side; Remove photoresist afterwards, thermal annealing, activate and form P type doped region, the back side, finally form back metal overleaf, form the device architecture that the collector electrode-emitter of IGBT is in parallel with Schottky diode.
The technique effect that the present invention can reach is:
Low dark curient Schottky diode is integrated in igbt by the present invention, when IGBT electric current is from emitter to collector electrode conducting, can plays afterflow effect, thus switching speed is improved, and switching power loss reduces; When IGBT electric current turns off from collector electrode to emitter conducting, can provide a bypass for the Reverse recovery of minority carrier, thus greatly reduce the reverse recovery time that afterflow is turned off, switching speed improves more.
Structure of the present invention also makes the reverse leakage of Schottky diode very little.
The invention enables device when applying without the need to an external diodes in parallel again.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is the schematic diagram of prior art igbt structure;
Fig. 2 is the vertical view that the present invention is integrated with the igbt structure of Low dark curient Schottky diode, only demonstrates polysilicon and not by surface of silicon that polysilicon covers in figure;
Fig. 3 is the profile along A-A ' in Fig. 2, and the back metal of the contact front metal at top and substrate bottom is not shown;
Fig. 4 is the profile along B-B ' in Fig. 2, and the back metal of the contact front metal at top and substrate bottom is not shown;
Fig. 5 is the profile along C-C ' in Fig. 2, and the back metal of the contact front metal at top and substrate bottom is not shown;
Fig. 6 to Figure 12 is the structural representation corresponding to method step of the present invention.
Embodiment
The present invention is integrated with the igbt structure of Low dark curient Schottky diode as shown in Figures 2 to 5, comprise igbt, the top of the N-type drift region of igbt comprises the region that covered by polysilicon gate and the region (not being arranged between two pieces of regions covered by polysilicon gate by the region that polysilicon gate covers) do not covered by polysilicon gate; One piece or polylith P type doped region is had, all the other regions (other namely beyond P type doped region be not by region that polysilicon gate covers) the N drift region for not having P type to adulterate below the region do not covered by polysilicon gate;
Top, P type doped region is connected with the emitter of IGBT with front metal by ohmic contact; Schottky contacts is formed on the top of the N drift region not having P type to adulterate, and is connected with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode is connected with the collector electrode of IGBT by back metal;
The negative electrode of Schottky diode is connected with back metal by N-type heavy doping, and the collector electrode of IGBT is also connected with back metal by the heavy doping of P type.
Schottky diode of the present invention is conducted electricity by many sons (electronics), and it is in parallel with IGBT uses, and when afterflow, sub-absorption (diffusion) reduces greatly less, and reverse recovery time reduces greatly; And when flowing to the switch off current of emitter current from collector electrode, for few son provides additional bypass, thus greatly reduce few sub-reverse recovery time.
Schottky contacts in the present invention is adjacent with p type island region, and when oppositely ending, N district electronics is exhausted by P type hole, therefore leaks electricity low.
Preparation method of the present invention comprises the following steps:
1, be illustrated in figure 6 sectional view, AA ' is identical with BB ' cross section; IGBT technique conventionally, forms polysilicon gate, tagma and source region at N-type light dope substrate, carries out N-type heavy doping at substrate back, forms IGBT grid, tagma and emitter region;
2, be illustrated in figure 7 sectional view, AA ' is identical with BB ' cross section; Resist coating, photoetching;
3, be illustrated in figure 8 sectional view, AA ' is identical with BB ' cross section; The a part of polysilicon removed top, N drift region and cover is carved by dry;
4, be illustrated in figure 9 sectional view, AA ' is identical with BB ' cross section; Deposit interlayer film, photoetching, dry carves interlayer film, forms contact hole, removes photoresist;
5, resist coating, photoetching, the follow-up overlying regions that will form Schottky contacts is covered by photoresist, carries out P type ion beam mutation to the region that will form ohmic contact; Being AA ' sectional view as shown in Figure 10 A, is BB ' sectional view as shown in Figure 10 B, is CC ' sectional view as illustrated in figure 10 c;
6, remove photoresist, carry out thermal annealing, activate P type Doped ions;
7, deposit can form metal (as titanium, but the being not limited to titanium) buried regions of Schottky contacts with N-type silicon face, carries out thermal annealing, forms ohmic contact at P type top, form Schottky contacts simultaneously at the top, N drift region adjacent with P type; Being AA ' sectional view as shown in Figure 11 A, is BB ' sectional view as shown in Figure 11 B, is CC ' sectional view as shown in Figure 11 C;
8, subsequent treatment; According to the method for existing discrete device, depositing metal fills up contact hole, by returning quarter or cmp removal excess surface metal dry quarter; Deposit front metal, forms front metal pattern by photoetching, dry quarter; Then at substrate back resist coating, photoetching, carries out heavy doping boron ion implantation to the back side, is AA ' sectional view as illustrated in fig. 12, is BB ' sectional view as shown in Figure 12 B; Remove photoresist afterwards, thermal annealing, activate and form P type doped region, the back side, finally form back metal overleaf, form the device architecture that the collector electrode-emitter of IGBT is in parallel with Schottky diode.
Claims (5)
1. one kind is integrated with the igbt structure of Low dark curient Schottky diode, comprise igbt, it is characterized in that: the top of the N-type drift region of described igbt comprises the region that covered by polysilicon gate and not by region that polysilicon gate covers; Have one piece or polylith P type doped region below the region do not covered by polysilicon gate, all the other regions are the N drift region not having P type to adulterate; Top, P type doped region is connected with the emitter of IGBT with front metal by ohmic contact; Schottky contacts is formed on the top of the N drift region not having P type to adulterate, and is connected with the emitter of IGBT by front metal as the anode of Schottky diode; The negative electrode of Schottky diode is connected with the collector electrode of IGBT by back metal;
Described Schottky contacts is positioned at the top of the N drift region not having P type to adulterate and adjacent with P type doped region; Described Schottky diode is in parallel with IGBT.
2. the igbt structure being integrated with Low dark curient Schottky diode according to claim 1, it is characterized in that: the negative electrode of described Schottky diode is connected with back metal by N-type heavy doping, the collector electrode of IGBT is also connected with back metal by the heavy doping of P type.
3. the preparation method being integrated with the igbt structure of Low dark curient Schottky diode according to claim 1, is characterized in that, comprise the following steps:
The first step, according to IGBT technique, forms IGBT grid, tagma and emitter region;
Second step, resist coating, photoetching, only expose a part of polysilicon that top, N drift region covers;
3rd step, carves by dry a part of polysilicon removed top, N drift region and cover;
4th step, deposit interlayer film, photoetching, dry carves interlayer film, forms contact hole, removes photoresist;
5th step, resist coating, photoetching, the follow-up overlying regions that will form Schottky contacts is covered by photoresist, carries out P type ion beam mutation to the region that will form ohmic contact;
6th step, removes photoresist, carries out thermal annealing, activates P type Doped ions;
7th step, deposit can form the metal buried regions of Schottky contacts with N-type silicon face, carries out thermal annealing, forms ohmic contact at top, P type doped region, forms Schottky contacts at the top, N drift region adjacent with P type doped region simultaneously;
8th step, subsequent treatment.
4. the preparation method being integrated with the igbt structure of Low dark curient Schottky diode according to claim 3, is characterized in that: the material of the metal buried regions in described 7th step is titanium, cobalt or other can form the metal of Schottky contacts with silicon.
5. the preparation method being integrated with the igbt structure of Low dark curient Schottky diode according to claim 3, it is characterized in that: the method for described 8th step subsequent treatment is: depositing metal fills up contact hole, by returning quarter or cmp removal excess surface metal dry quarter; Deposit front metal, forms front metal pattern by photoetching, dry quarter; Then at substrate back resist coating, photoetching, carries out heavy doping boron ion implantation to the back side; Remove photoresist afterwards, thermal annealing, activate and form P type doped region, the back side, finally form back metal overleaf, form the device architecture that the collector electrode-emitter of IGBT is in parallel with Schottky diode.
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| CN201110229038.2A CN102931215B (en) | 2011-08-11 | 2011-08-11 | IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof |
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| CN201110229038.2A CN102931215B (en) | 2011-08-11 | 2011-08-11 | IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof |
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| CN109755303B (en) * | 2017-11-01 | 2021-02-26 | 苏州东微半导体股份有限公司 | IGBT power device |
| CN115832039A (en) * | 2022-12-09 | 2023-03-21 | 宁波达新半导体有限公司 | Reverse conducting IGBT device |
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| US6593620B1 (en) * | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
| US7737522B2 (en) * | 2005-02-11 | 2010-06-15 | Alpha & Omega Semiconductor, Ltd. | Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
| US8110869B2 (en) * | 2005-02-11 | 2012-02-07 | Alpha & Omega Semiconductor, Ltd | Planar SRFET using no additional masks and layout method |
| US8901699B2 (en) * | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
| JP5290549B2 (en) * | 2007-08-29 | 2013-09-18 | ローム株式会社 | Semiconductor device |
| DE102009028240A1 (en) * | 2009-08-05 | 2011-02-10 | Robert Bosch Gmbh | Field effect transistor with integrated TJBS diode |
| US8829614B2 (en) * | 2009-08-31 | 2014-09-09 | Alpha And Omega Semiconductor Incorporated | Integrated Schottky diode in high voltage semiconductor device |
| US8372738B2 (en) * | 2009-10-30 | 2013-02-12 | Alpha & Omega Semiconductor, Inc. | Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme |
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