CN103065962A - Manufacturing method of insulated gate bipolar transistor (IGBT) - Google Patents
Manufacturing method of insulated gate bipolar transistor (IGBT) Download PDFInfo
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- CN103065962A CN103065962A CN201110316136XA CN201110316136A CN103065962A CN 103065962 A CN103065962 A CN 103065962A CN 201110316136X A CN201110316136X A CN 201110316136XA CN 201110316136 A CN201110316136 A CN 201110316136A CN 103065962 A CN103065962 A CN 103065962A
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Abstract
The invention discloses a manufacturing method of an insulated gate bipolar transistor (IGBT). A backside technology comprises the following steps that N-iron implantation is performed on a back side of a silicon substrate so as to form an N-buffer; a solid mask plate is placed between the back side of the silicon substrate and a laser light source; a laser beam passes through the solid mask plate and carries out annealing on the N-buffer in a laser irradiation area so as to form a graphic structure which is formed by a high activation area and a low activation area; the laser beam reaches a position of the back side of the silicon substrate after passing through the solid mask plate and the position is changed so as to realize carrying out annealing on the N-buffers of different areas on the silicon substrate; finally, the annealing can be performed on the N-buffers of all the areas on the silicon substrate. By using the method of the invention, a space between the high activation area and the low activation area of the N-buffer can be accurately controlled; when a device is started, stable carrier distribution balance can be formed; when the device is started, diffuser efficiency of a collector region hole can be inhibited and a turn-off rate of the device is increased.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit manufacture method, particularly relate to a kind of manufacture method of igbt.
Background technology
Igbt (Insulated Gate Bipolar Transistor, IGBT) be the bipolar compound device of a kind of voltage-controlled MOS/, this device has the major advantage of dipole power transistor and power MOSFET simultaneously: input impedance is high, the input driving power is little, conducting resistance is little, current capacity is large, switching speed is fast etc.
As shown in Figure 1, the structural representation of existing the first IGBT comprises:
N-type resilient coating (N-buffer) 12 is comprised of a N-type ion implanted region that injects from the silicon substrate back side, and described N-type resilient coating 12 and described collector region 13 contact.
N-type drift region (N-drift) 11 is formed on the described silicon substrate, and described N-type drift region 11 is described N-type resilient coating 12.
IGBT is widely used, and power converter is one of its main application.It is particularly important for the IGBT that is operated under the different driving frequency to reduce the wastage, and therefore, needs fine control starting resistor (on voltage) and switching rate (switching speed).The performance of the cut-in voltage of IGBT and switching speed will be compromised balanced.Cut-in voltage reduces, and switching speed also can decrease.On the contrary, cut-in voltage raises, and switching speed also can increase.
As shown in Figure 1, the hole is by the diffuser efficiency of collector region 13 to N-type drift region 11 in the time of can changing the IGBT opening by the carrier concentration of control collector region 13 and N-type resilient coating 12.The carrier concentration that directly reduces collector region 13 can reduce the number of cavities that is diffused into N-type drift region 11 by collector region 13, can improve like this switching speed of device.But the decrease of diffuser efficiency, to cause the electric field strength of collector region 13 ends of IGBT under the short circuit state to increase, thereby bring some other problem, increase caused cut-in voltage such as the reduction of resistance to sparking (destruction resistance) and the contact resistance variation between collector region 13 and contact electrode and float.
As shown in Figure 2, the structural representation of existing the second IGBT is the improvement structure of existing the first IGBT.That the N-type resilient coating 12 of existing the second IGBT has been divided into overactivity zone 12a and the low activating area 12b of strip interval alternative arrangement with the difference of existing the first IGBT.The diffuser efficiency in collector region 13 holes when wherein overactivity zone 12a can suppress the IGBT opening, and the shutoff speed of raising device.
If adopt the laser annealing mode to form as shown in Figure 2 IGBT structure, because the size of laser beam is larger, and be greater than the size of overactivity zone 12a and low activating area 12b.So adopt existing laser annealing mode can't realize the accurate control of the size of overactivity zone 12a and low activating area 12b.
Existing a kind of can overactivity zone 12a and the accuracy control method of the size of low activating area 12b form described N-type resilient coating for the N-type Implantation that adopts the twice silicon substrate back side: be infused in described silicon substrate Zone Full for the first time and inject, inject for the second time and pass through graphical definition, local zone is annotated dense, the high temperature anneal more afterwards.But complex process.
Summary of the invention
Technical problem to be solved by this invention provides a kind of manufacture method of igbt, can accurately control the overactivity zone of N-type resilient coating and the spacing of low activating area, when being opened, igbt forms stable charge carrier distribution equilibrium, the diffuser efficiency in the collector region hole in the time of suppressing the igbt opening, and the shutoff speed of raising device.
For solving the problems of the technologies described above, the invention provides a kind of manufacture method of igbt, carry out the positive technique of igbt at silicon substrate, carry out afterwards back process, described back process comprises the steps:
Step 1, the N-type Implantation is carried out at the back side of described silicon substrate form the N-type resilient coating.
Step 2, with a solid mask plate place between the back side of described silicon substrate and the LASER Light Source and can be by on the position of laser beam vertical irradiation, be formed with the mask plate figure that is formed by passing through of passing of the laser energy barrier zones that zone and laser is blocked at described solid mask plate.
Step 3, make laser beam pass described solid mask plate the described N-type resilient coating in Ear Mucosa Treated by He Ne Laser Irradiation zone is annealed, and graphic structure regional by overactivity in described N-type resilient coating formation and that low activating area forms, this graphic structure is identical with described mask plate figure; Wherein, anneal after to the described N-type resilient coating and form by passing described Ear Mucosa Treated by He Ne Laser Irradiation by the zone in described overactivity zone; The laser that passes described barrier zones can be blocked by described solid mask plate and be reflected and absorb, the laser energy that shines at last described N-type resilient coating can reduce, and the laser after energy reduces is annealed to the described N-type resilient coating of its irradiation area and formed described low region of activation.
Step 4, change described laser beam and pass the position that shines the described silicon substrate back side behind the described solid mask plate, realization is annealed to the described N-type resilient coating of the zones of different on the described silicon substrate, realizes at last the described N-type resilient coating of the Zone Full on the described silicon substrate is annealed.
Further improve and be, graphic structure regional according to the described overactivity that will form and described low activating area composition defines the described graphic structure by zone and described barrier zones of described solid mask plate, and the graphic structure of described overactivity zone and described low activating area composition is the structure of strip alternative arrangement.
Further improving is that the material of described solid mask plate is that fusing point is more than or equal to the solid material of silicon.
Further improving is that the material of described solid mask plate is diamond, evanohm, nickel alloy.
Further improve and be, by fixing described silicon substrate, make described solid mask plate and laser beam position move to change described laser beam with respect to described silicon substrate together and pass the position that shines the described silicon substrate back side behind the described solid mask plate in the step 4.
Further improve and be, by fixing described solid mask plate and laser beam position, make described silicon substrate move to change described laser beam with respect to described solid mask plate and laser beam position and pass the position that shines the described silicon substrate back side behind the described solid mask plate in the step 2.
The inventive method can accurately be controlled the overactivity zone of N-type resilient coating and the spacing of low activating area, when being opened, igbt forms stable charge carrier distribution equilibrium, the diffuser efficiency in the collector region hole in the time of suppressing the igbt opening, and the shutoff speed of raising device.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the structural representation of existing the first IGBT;
Fig. 2 is the structural representation of existing the second IGBT;
Fig. 3 is the flow chart of the manufacture method of embodiment of the invention IGBT;
Fig. 4-Fig. 7 is the structural representation in each step of manufacture method of the embodiment of the invention one IGBT.
Embodiment
As shown in Figure 3, be the flow chart of the manufacture method of embodiment of the invention IGBT.The manufacture method of embodiment of the invention IGBT comprises the steps:
As shown in Figure 4, at first be the positive technique of carrying out igbt at silicon substrate.
Positive technique comprises the steps:
Form N-type drift region 11 at silicon substrate.
11 form P type base 18 in described N-type drift region.
Form a deep trench at described silicon substrate, and in described deep trench, fill polysilicon formation grid 16.Described grid 16 has passed described P type base 18 and has entered into described N-type drift region 11.
In the described P type base 18 of described grid 16 both sides, carry out the N-type Implantation and form the emitter region 15 that N+ mixes.Described grid 16 covered described P type base 18 and at the channel region that covers out formation one vertical structure from sidewall direction.Described channel region connects described N-type drift region 11 and the follow-up emitter region that will form 15 of 18 both sides, described P type base.
Form dielectric layer 17 on the described silicon substrate, described dielectric layer 17 is covered in the top of described grid 16.
Carry out back process after finishing above-mentioned positive technique, described back process comprises the steps:
Step 1, is as shown in Figure 5 carried out the N-type Implantation to the back side of described silicon substrate and is formed N-type resilient coating 12.Be positioned at the bottom of described N-type drift region 11 after described N-type resilient coating 12 forms and be in contact with one another.
Step 2, as shown in Figure 6, with a solid mask plate 21 place between the back side of described silicon substrate and the LASER Light Source and can be by on the position of laser beam vertical irradiation, be formed with the mask plate figure that is formed by passing through of passing of the laser energy barrier zones that zone and laser is blocked at described solid mask plate 21.Define the described graphic structure by zone and described barrier zones of described solid mask plate 21 according to the graphic structure of the follow-up described overactivity zone 12a that will form and described low activating area 12b composition.The graphic structure that the zone 12a of overactivity described in the embodiment of the invention and described low activating area 12b form is the structure of strip alternative arrangement, the described of described like this solid mask plate 21 is the structure of strip alternative arrangement also by zone and the graphic structure of described barrier zones, the white strip of the described solid mask plate 21 among Fig. 6 be described by regional, the strip of oblique line is arranged is described barrier zones.The material of described solid mask plate 21 be fusing point more than or equal to the solid material of silicon, such as diamond, evanohm, nickel alloy etc.
Step 3, as shown in Figure 6, the described N-type resilient coating that makes laser beam pass 21 pairs of Ear Mucosa Treated by He Ne Laser Irradiation zones of described solid mask plate is annealed, and forming the graphic structure that is formed by overactivity zone 12a and low activating area 12b at described N-type resilient coating, this graphic structure is identical with described mask plate figure.Wherein, described overactivity zone 12a anneals after to the described N-type resilient coating and forms by passing described Ear Mucosa Treated by He Ne Laser Irradiation by the zone; The laser that passes described barrier zones can be blocked by described solid mask plate 21 and be reflected and absorb, the laser energy that shines at last described N-type resilient coating can reduce, and the laser after energy reduces is annealed to the described N-type resilient coating of its irradiation area and formed described low region of activation.
Step 4, change described laser beam and pass the position that shines the described silicon substrate back side behind the described solid mask plate 21, realization is annealed to the described N-type resilient coating of the zones of different on the described silicon substrate, realizes at last the described N-type resilient coating of the Zone Full on the described silicon substrate is annealed.The method that changes the position at the described silicon substrate of the described laser beam irradiation back side has two kinds: the first for, by fixing described silicon substrate, make described solid mask plate 21 and laser beam position move to change described laser beam with respect to described silicon substrate together and pass the position that shines the described silicon substrate back side behind the described solid mask plate 21.The second is, by fixing described solid mask plate 21 and laser beam position, make described silicon substrate move to change described laser beam with respect to described solid mask plate 21 and laser beam position and pass the position that shines the described silicon substrate back side behind the described solid mask plate 21.
Subsequent step also comprises:
As shown in Figure 7, carry out P type Implantation from the back side of described silicon substrate and form P type layer 13, after the formation, described P type layer 13 is positioned at the bottom of described N-type resilient coating 12 and contacts with each other, and forms collector region 13 by described P type layer 13.
As shown in Figure 2, last at the back side of described silicon substrate growing metal layer, draw collector region electrode 14.
More than by specific embodiment the present invention is had been described in detail, but these are not to be construed as limiting the invention.In the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (6)
1. the manufacture method of an igbt is carried out the positive technique of igbt at silicon substrate, carries out afterwards back process, it is characterized in that described back process comprises the steps:
Step 1, the N-type Implantation is carried out at the back side of described silicon substrate form the N-type resilient coating;
Step 2, with a solid mask plate place between the back side of described silicon substrate and the LASER Light Source and can be by on the position of laser beam vertical irradiation, be formed with the mask plate figure that is formed by passing through of passing of the laser energy barrier zones that zone and laser is blocked at described solid mask plate;
Step 3, make laser beam pass described solid mask plate the described N-type resilient coating in Ear Mucosa Treated by He Ne Laser Irradiation zone is annealed, and graphic structure regional by overactivity in described N-type resilient coating formation and that low activating area forms, this graphic structure is identical with described mask plate figure; Wherein, anneal after to the described N-type resilient coating and form by passing described Ear Mucosa Treated by He Ne Laser Irradiation by the zone in described overactivity zone; The laser that passes described barrier zones can be blocked by described solid mask plate and be reflected and absorb, the laser energy that shines at last described N-type resilient coating can reduce, and the laser after energy reduces is annealed to the described N-type resilient coating of its irradiation area and formed described low region of activation;
Step 4, change described laser beam and pass the position that shines the described silicon substrate back side behind the described solid mask plate, realization is annealed to the described N-type resilient coating of the zones of different on the described silicon substrate, realizes at last the described N-type resilient coating of the Zone Full on the described silicon substrate is annealed.
2. the manufacture method of igbt as claimed in claim 1, be characterised in that: graphic structure regional according to the described overactivity that will form and described low activating area composition defines the described graphic structure by zone and described barrier zones of described solid mask plate, and the graphic structure of described overactivity zone and described low activating area composition is the structure of strip alternative arrangement.
3. the manufacture method of igbt as claimed in claim 1, be characterised in that: the material of described solid mask plate is that fusing point is more than or equal to the solid material of silicon.
4. the manufacture method of igbt as claimed in claim 3, be characterised in that: the material of described solid mask plate is diamond, evanohm, nickel alloy.
5. the manufacture method of igbt as claimed in claim 1, be characterised in that: by fixing described silicon substrate, make described solid mask plate and laser beam position move to change described laser beam with respect to described silicon substrate together and pass the position that shines the described silicon substrate back side behind the described solid mask plate in the step 4.
6. the manufacture method of igbt as claimed in claim 1, be characterised in that: by fixing described solid mask plate and laser beam position, make described silicon substrate move to change described laser beam with respect to described solid mask plate and laser beam position and pass the position that shines the described silicon substrate back side behind the described solid mask plate in the step 4.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282741A (en) * | 2013-07-05 | 2015-01-14 | 无锡华润上华半导体有限公司 | Field stop type reverse conducting insulated gate bipolar transistor (FS type RC-IGBT) and manufacturing method thereof |
| CN109728082A (en) * | 2017-10-30 | 2019-05-07 | 奥特润株式会社 | Power semiconductor and its manufacturing method |
| WO2021259088A1 (en) * | 2020-06-24 | 2021-12-30 | 全球能源互联网研究院有限公司 | Igbt device backside structure and preparation method therefor, and igbt device |
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| CN1262018C (en) * | 2001-08-01 | 2006-06-28 | 日本电气株式会社 | Field effect transistor and mfg. method thereof, and liquid crystal display device and mfg. method thereof |
| US20080173893A1 (en) * | 2007-01-23 | 2008-07-24 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
| CN101924070A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1262018C (en) * | 2001-08-01 | 2006-06-28 | 日本电气株式会社 | Field effect transistor and mfg. method thereof, and liquid crystal display device and mfg. method thereof |
| US20080173893A1 (en) * | 2007-01-23 | 2008-07-24 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
| CN101924070A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282741A (en) * | 2013-07-05 | 2015-01-14 | 无锡华润上华半导体有限公司 | Field stop type reverse conducting insulated gate bipolar transistor (FS type RC-IGBT) and manufacturing method thereof |
| CN109728082A (en) * | 2017-10-30 | 2019-05-07 | 奥特润株式会社 | Power semiconductor and its manufacturing method |
| US11164964B2 (en) | 2017-10-30 | 2021-11-02 | Hyundai Mobis Co., Ltd. | Power semiconductor device and method of fabricating the same |
| CN109728082B (en) * | 2017-10-30 | 2022-04-29 | 现代摩比斯株式会社 | Power semiconductor device and method for manufacturing the same |
| WO2021259088A1 (en) * | 2020-06-24 | 2021-12-30 | 全球能源互联网研究院有限公司 | Igbt device backside structure and preparation method therefor, and igbt device |
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| CN103065962B (en) | 2015-08-19 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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