CN101924070A - Active matrix/organic light emitting display and manufacturing method thereof - Google Patents
Active matrix/organic light emitting display and manufacturing method thereof Download PDFInfo
- Publication number
- CN101924070A CN101924070A CN 201010177738 CN201010177738A CN101924070A CN 101924070 A CN101924070 A CN 101924070A CN 201010177738 CN201010177738 CN 201010177738 CN 201010177738 A CN201010177738 A CN 201010177738A CN 101924070 A CN101924070 A CN 101924070A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- organic light
- emitting display
- active matrix
- polysilicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention relates to an active matrix/organic light emitting display and a manufacturing method thereof, in particular to a low-temperature polysilicon display panel and a manufacturing method thereof. In the technical scheme of the invention, a switch thin-film transistor (TFT) with high carrier mobility is obtained in a switch area in a pixel and a drive TFT with good consistency is obtained in a drive area by way of double crystallization, namely solid-phase crystallization and local laser crystallization, thus realizing improvement of the overall property of the active matrix/organic light emitting display.
Description
Technical field
The present invention relates to a kind of active matrix/organic light emitting display and manufacture method thereof, relate in particular to a kind of low temperature polycrystalline silicon display floater and manufacture method thereof.
Background technology
Low-temperature polysilicon film transistor (LTPS TFT) has been applied on the flat-panel screens at large, for example, and active matrix liquid crystal display (AMLCD), active matrix/organic light emitting display (AMOLED) etc.The type display generally is elder generation's deposited amorphous silicon layer (a-Si) on glass substrate, make recrystallized amorphous silicon have the level and smooth polysilicon film (p-Si) that reaches big crystal grain by heat treatment then, next utilize polysilicon film to make thin-film transistor (TFT) array with formation.For LTPS crystallization technology, solid phase crystallization (SPC), quasi-molecule laser annealing (ELA) etc. all belongs to mainstream technology at present.The TFT that wherein adopts the ELA technology to obtain has the high characteristics of carrier mobility usually, but consistency is relatively poor relatively; And the common consistency of TFT that adopts the SPC technology to obtain is fine, but carrier mobility is relatively low.In AMLCD used, the TFT in the image element circuit only played on-off action.And use for AMOLED, TFT in the image element circuit can be divided into the switching TFT two big classes that are used to drive the drive TFT of organic luminescent device (OLED) and play on-off action according to function, so wherein drive TFT is because provide stable electric current to need good consistency will for the OLED device, and switching TFT is not high but need big switch current ratio to coherence request, that is high carrier mobility.Therefore, adopt ELA or SPC technology to be difficult to obtain to have the switching TFT and the fine conforming drive TFT of high carrier mobility simultaneously separately, can't satisfy the application demand of AMOLED fully.
Summary of the invention
At the problems referred to above, the purpose of this invention is to provide a kind of active matrix/organic light emitting display and manufacture method thereof.
The objective of the invention is to be achieved by following technical solution:
The invention provides a kind of active matrix/organic light emitting display, comprise a substrate; Be disposed at a plurality of pixels on this substrate, and be arranged; Many the data wires of configured in parallel between pixel; Configured in parallel is between pixel and the multi-strip scanning line vertical with data wire.Have a switch region and a drive area in the pixel region of above-mentioned pixel, has switching thin-film transistor in the above-mentioned switch region, have drive thin film transistors in the above-mentioned drive area, and the carrier mobility of switching thin-film transistor is greater than the carrier mobility of drive thin film transistors.
The manufacture method of above-mentioned active matrix/organic light emitting display, described manufacture method may further comprise the steps:
One amorphous silicon layer is set on substrate;
By the solid phase crystallization method, the described amorphous silicon layer with described switch region and drive area changes first polysilicon layer into simultaneously;
Utilize laser beam the polysilicon layer of switch region to be carried out crystallization and handle, to form second polysilicon layer by mask plate;
On second polysilicon layer of above-mentioned switch region, make switching thin-film transistor, on first polysilicon layer of above-mentioned drive area, make drive thin film transistors.
Active matrix/organic light emitting display provided by the invention, switching TFT in the pixel in the switch region has high carrier mobility, drive TFT in the drive area has good consistency, thereby can realize the lifting of active matrix/organic light emitting display overall performance.
Description of drawings
Fig. 1 is the local circuit structural representation of active matrix/organic light emitting display array base palte;
Fig. 2 is the structure for amplifying schematic diagram of pixel 12 among Fig. 1;
Fig. 3 A forms the schematic diagram of amorphous silicon layer for the present invention;
Fig. 3 B forms the schematic diagram of first polysilicon layer for the present invention;
Fig. 3 C forms the schematic diagram of second polysilicon layer for the present invention;
Fig. 4 is the structural representation of mask used plate among Fig. 3 C.
Description of reference numerals is as follows:
21 drive areas 22, switch region
Switching thin-film transistor 23 drive thin film transistors 24
Mask plate 35 second polysilicon layers 36
Mask plate 41 through holes 42
Embodiment
For allowing foregoing of the present invention become apparent, preferred embodiment cited below particularly, and be described in detail below in conjunction with the accompanying drawings.
Embodiment
Fig. 1 is the local circuit structural representation of active matrix/organic light emitting display array base palte, as shown in the figure, this array base palte comprises glass substrate 11, be disposed at a plurality of pixels 12 on this substrate, and be arranged, many the data wires 13 of configured in parallel between pixel, configured in parallel are between pixel and the multi-strip scanning line 14 vertical with data wire.Fig. 2 is the structure for amplifying schematic diagram of pixel 12 among Fig. 1, as shown in the figure, have a switch region 21 and a drive area 22 in the pixel region of described pixel 12, has switching thin-film transistor 23 in the described switch region 21, have drive thin film transistors 24 in the described drive area 22, also comprise storage capacitance 25 and organic luminescent device 26.The carrier mobility of described drive thin film transistors 24 is about 25cm
2/ Vs, the carrier mobility of described switching thin-film transistor 23 is about 80cm
2/ Vs.
Fig. 3 A～3C is each processing step diagram of the described manufacturing method of display device of the embodiment of the invention, shown in the technology diagram of AA ' cross section among Fig. 2.As shown in Figure 3A, deposition one deck amorphous silicon layer 33 on glass substrate 31 can also deposit one deck SiOx or SiNx/SiOx resilient coating 32 earlier before the deposited amorphous silicon layer 33 on glass substrate 31 earlier; Shown in Fig. 3 B, by the SPC method, the amorphous silicon layer 33 that previous step is formed changes first polysilicon layer 34 into, by this step process, can be in the lump changes the amorphous silicon layer of switch region 21 in the corresponding diagram 2 and drive area 22 into first polysilicon layer; Shown in Fig. 3 C, utilize the method for laser crystallization, as methods such as ELA, first polysilicon layer 34 that forms by the 35 pairs of previous steps of mask plate carries out local to be handled, and changes first polysilicon layer 34 of corresponding switch region into second polysilicon layer 36.After finishing the making of first polysilicon layer 34 and second polysilicon layer 36, on first polysilicon layer of drive area 22 correspondences, make drive thin film transistors 24, on second polysilicon layer of switch region 21 correspondences, make switching thin-film transistor 23, finish subsequent process steps then.
Fig. 4 is the structural representation of mask used plate 35 in the step shown in Fig. 3 C, as shown in the figure, this mask plate 41 only in corresponding each pixel the position of switch region through hole 42 is set so that laser beam can carry out local by first polysilicon layer of 42 pairs of switch regions of through hole and handles and make it change second polysilicon layer in the laser crystallization step.
AMOLED display by the technical solution of the present invention manufacturing, can satisfy the different demands of AMOLED application to different tft characteristicses in the pixel, specifically, the switching TFT that is the switch region has high carrier mobility, the drive TFT of drive area has good consistency, thereby improves the overall performance that is applied to AMOLED displays such as mobile communication equipment, video playback apparatus and display device.
Though the present invention is to disclose as above than preferable embodiment; yet it is not in order to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (11)
1. the manufacture method of an active matrix/organic light emitting display, described active matrix/organic light emitting display comprises:
One substrate;
And be configured on this substrate
A plurality of pixels are arranged;
Many data wires, configured in parallel is between pixel;
Multi-strip scanning line, configured in parallel are between pixel and vertical with data wire;
Have a switch region and a drive area in the pixel region of described pixel,
Have switching thin-film transistor in the described switch region, have drive thin film transistors in the described drive area,
Described manufacture method may further comprise the steps:
One amorphous silicon layer is set on described substrate;
By the solid-phase crystallization method, the described amorphous silicon layer with described switch region and drive area changes first polysilicon layer into simultaneously;
Utilize laser beam that the described polysilicon layer of described switch region is carried out the crystallization processing, form second polysilicon layer;
On second polysilicon layer of described switch region, make switching thin-film transistor, on first polysilicon layer of described drive area, make drive thin film transistors.
2. the manufacture method of a kind of active matrix/organic light emitting display as claimed in claim 1, it is characterized in that the carrier mobility of the switching thin-film transistor of making on wherein said second polysilicon layer is greater than the carrier mobility of the drive thin film transistors of making on described first polysilicon layer.
3. the manufacture method of a kind of active matrix/organic light emitting display as claimed in claim 2 is characterized in that, the carrier mobility of the thin-film transistor of making on first polysilicon layer of wherein said drive area is about 10-40cm
2/ Vs.
4. the manufacture method of a kind of active matrix/organic light emitting display as claimed in claim 2 is characterized in that, the carrier mobility of the thin-film transistor of making on second polysilicon layer of wherein said switch region is about 50-250cm
2/ Vs.
5. the manufacture method of a kind of active matrix/organic light emitting display as claimed in claim 1 is characterized in that, forms second polysilicon layer by the mask plate mode.
6. active matrix/organic light emitting display comprises:
One substrate;
And be configured on this substrate
A plurality of pixels are arranged;
Many data wires, configured in parallel is between pixel;
Multi-strip scanning line, configured in parallel are between pixel and vertical with data wire;
Have a switch region and a drive area in the pixel region of described pixel,
Have switching thin-film transistor in the described switch region, have drive thin film transistors in the described drive area,
It is characterized in that the carrier mobility of wherein said switching thin-film transistor is greater than the carrier mobility of described drive thin film transistors.
7. a kind of active matrix/organic light emitting display as claimed in claim 6 is characterized in that the carrier mobility of wherein said drive thin film transistors is about 10-40cm
2/ Vs.
8. a kind of active matrix/organic light emitting display as claimed in claim 6 is characterized in that the carrier mobility of wherein said switching thin-film transistor is about 50-250cm
2/ Vs.
9. a mobile communication equipment is characterized in that, described mobile communication equipment comprises active-matrix organic light emitting display as claimed in claim 6.
10. a video playback apparatus is characterized in that, described video playback apparatus comprises active-matrix organic light emitting display as claimed in claim 6.
11. a display device is characterized in that, described display device comprises active-matrix organic light emitting display as claimed in claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010177738 CN101924070A (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010177738 CN101924070A (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101924070A true CN101924070A (en) | 2010-12-22 |
Family
ID=43338886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010177738 Pending CN101924070A (en) | 2010-05-20 | 2010-05-20 | Active matrix/organic light emitting display and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101924070A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924121A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN103065962A (en) * | 2011-10-18 | 2013-04-24 | 上海华虹Nec电子有限公司 | Manufacturing method of insulated gate bipolar transistor (IGBT) |
| WO2016176879A1 (en) * | 2015-05-04 | 2016-11-10 | 深圳市华星光电技术有限公司 | Method for fabricating amoled back plate, and structure thereof |
| CN107146855A (en) * | 2017-05-16 | 2017-09-08 | 京东方科技集团股份有限公司 | Oled substrate and preparation method thereof, display device |
| CN110190063A (en) * | 2018-07-02 | 2019-08-30 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
| US11239295B2 (en) | 2018-09-28 | 2022-02-01 | Kunshan Go-Visionox Opto-Electronios Co., Ltd. | Organic light-emitting display devices, methods for manufacturing the same, and masks for making supporting members |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071793A (en) * | 2006-05-11 | 2007-11-14 | 统宝光电股份有限公司 | Flat panel display and fabrication method and thereof |
-
2010
- 2010-05-20 CN CN 201010177738 patent/CN101924070A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071793A (en) * | 2006-05-11 | 2007-11-14 | 统宝光电股份有限公司 | Flat panel display and fabrication method and thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924121A (en) * | 2010-05-20 | 2010-12-22 | 昆山工研院新型平板显示技术中心有限公司 | Active matrix/organic light emitting display and manufacturing method thereof |
| CN103065962A (en) * | 2011-10-18 | 2013-04-24 | 上海华虹Nec电子有限公司 | Manufacturing method of insulated gate bipolar transistor (IGBT) |
| CN103065962B (en) * | 2011-10-18 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | The manufacture method of igbt |
| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN102891107B (en) * | 2012-10-19 | 2015-03-25 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| WO2016176879A1 (en) * | 2015-05-04 | 2016-11-10 | 深圳市华星光电技术有限公司 | Method for fabricating amoled back plate, and structure thereof |
| CN107146855A (en) * | 2017-05-16 | 2017-09-08 | 京东方科技集团股份有限公司 | Oled substrate and preparation method thereof, display device |
| CN110190063A (en) * | 2018-07-02 | 2019-08-30 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
| WO2020007077A1 (en) * | 2018-07-02 | 2020-01-09 | 京东方科技集团股份有限公司 | Array substrate and fabrication method therefor, and display device |
| US11527554B2 (en) | 2018-07-02 | 2022-12-13 | Beijing Boe Technology Development Co., Ltd. | Array substrate, manufacturing method thereof, and display device |
| US11239295B2 (en) | 2018-09-28 | 2022-02-01 | Kunshan Go-Visionox Opto-Electronios Co., Ltd. | Organic light-emitting display devices, methods for manufacturing the same, and masks for making supporting members |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107424957B (en) | Manufacturing method of flexible TFT substrate | |
| CN102034746B (en) | Manufacturing method of active matrix organic light-emitting display array base plate | |
| US9368762B2 (en) | Active organic electroluminescence device back panel and manufacturing method thereof | |
| CN101924070A (en) | Active matrix/organic light emitting display and manufacturing method thereof | |
| CN108231795A (en) | Array substrate, production method, display panel and display device | |
| CN104810382A (en) | AMOLED (active matrix/organic light emitting diode) backboard production method and AMOLED backboard structure | |
| CN104022126A (en) | Array substrate and manufacturing method thereof, and display apparatus | |
| CN203871327U (en) | Array substrate and display device | |
| CN203026507U (en) | Flexible display device | |
| US8963157B2 (en) | Thin film transistor, array substrate, and manufacturing method thereof | |
| KR101795997B1 (en) | Organic light emitting diode display and method for manufacturing the same | |
| CN103745955A (en) | Display device, array substrate and manufacturing method of array substrate | |
| CN102654698A (en) | Liquid crystal display array substrate and manufacturing method thereof as well as liquid crystal display | |
| WO2017157244A1 (en) | Oled display panel and manufacturing method for same | |
| CN101958102B (en) | Active matrix organic light-emitting display with shared data line structure | |
| CN101924122B (en) | Active matrix/organic light emitting display and manufacturing method thereof | |
| CN103928343A (en) | Method for manufacturing thin film transistor and organic light-emitting diode display | |
| CN108807420A (en) | A kind of flexible display substrates and preparation method thereof, foldable display device | |
| CN104599959A (en) | Manufacturing method and structure of low-temperature polycrystalline silicon TFT substrate | |
| CN102651399B (en) | Microcrystal amorphous silicon composite thin film transistor and manufacturing method thereof | |
| CN103745954A (en) | Display device, array substrate and manufacturing method of array substrate | |
| CN102005413A (en) | Production method of array substrate of organic light-emitting display of active matrix | |
| CN102709235B (en) | Array base board as well as manufacturing method and display device thereof | |
| CN104393026A (en) | OLED display substrate, manufacturing method of OLED display substrate, and display device adopting OLED display substrate | |
| CN101834189A (en) | Image display system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20101222 |