CN102005413A - Production method of array substrate of organic light-emitting display of active matrix - Google Patents
Production method of array substrate of organic light-emitting display of active matrix Download PDFInfo
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- CN102005413A CN102005413A CN2010102928399A CN201010292839A CN102005413A CN 102005413 A CN102005413 A CN 102005413A CN 2010102928399 A CN2010102928399 A CN 2010102928399A CN 201010292839 A CN201010292839 A CN 201010292839A CN 102005413 A CN102005413 A CN 102005413A
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Abstract
The invention relates to a production method of an array substrate of an organic light-emitting display of an active matrix, in particular to a production method of a low-temperature polysilicon thin film transistor array substrate. In the technical scheme of the invention, a seed crystal groove is arranged in the process of preparing the thin film transistor so as to improve the crystallization effect of amorphous silicon, thereby the thin film transistor with favorable consistency can be obtained so as to realize the improvement on the integral performance of the organic light-emitting display of the active matrix.
Description
Technical field
The present invention relates to a kind of manufacture method of active matrix/organic light emitting display array base palte, relate in particular to a kind of manufacture method of low-temperature polysilicon film transistor array base palte.
Background technology
Low-temperature polysilicon film transistor (LTPS TFT) array base palte has been applied on the flat-panel screens at large, for example, and active matrix liquid crystal display (AMLCD), active matrix/organic light emitting display (AMOLED) etc.The type display generally is elder generation's deposited amorphous silicon layer (a-Si) on substrate, make the amorphous silicon fusion-crystallization to form smoothly and to have the polysilicon layer (p-Si) of crystal grain by heat treatment then, next utilize the semiconductor layer of polysilicon layer, make array base palte as thin-film transistor (TFT).In AMLCD used, the TFT in the image element circuit only played on-off action, so its carrier mobility of more paying attention to TFT is to guarantee enough big ON state current.And use for AMOLED, TFT in the image element circuit can be divided into the switching TFT that plays on-off action according to function and be used to drive the drive TFT two big classes of organic luminescent device (OLED), switching TFT needs big ON state current, that is high carrier mobility, and drive TFT is because provide stable, uniform electric current will for the OLED device, so need good consistency.For low temperature polycrystalline silicon crystallization technology, quasi-molecule laser annealing (ELA) technology is the technology that industry generally adopts at present, and the TFT that utilizes this technology to obtain has higher carrier mobility usually, but consistency is relatively poor relatively.Therefore, be difficult to obtain to have the switching TFT and the fine conforming drive TFT of high carrier mobility simultaneously, can't satisfy the application demand of AMOLED fully.
Summary of the invention
At the problems referred to above, the active matrix/organic light emitting display that the purpose of this invention is to provide a kind of manufacture method of active matrix/organic light emitting display array base palte and comprise described array base palte.
The objective of the invention is to be achieved by following technical solution:
The invention provides a kind of manufacture method of active matrix/organic light emitting display array base palte, described active matrix/organic light emitting display array base palte comprises a glass substrate; Be disposed at a plurality of pixels on this glass substrate, and be arranged; Many the data wires of configured in parallel between pixel; Configured in parallel is between pixel and the multi-strip scanning line vertical with data wire.Have a switch region and a drive area in the pixel region of above-mentioned pixel, have switching thin-film transistor in the above-mentioned switch region, have drive thin film transistors in the above-mentioned drive area.
The manufacture method of above-mentioned active matrix/organic light emitting display array base palte is included in and forms a resilient coating on the glass substrate, forms an amorphous silicon layer on resilient coating, and some seed crystal grooves are set on the one deck at least in glass substrate, resilient coating and amorphous silicon layer.Above-mentioned seed crystal groove is on the column direction of array base palte and is arranged in parallel, and spacing is the design pitch of adjacent two pixel drive thin-film transistors.Described drive thin film transistors is formed in the seed crystal groove.
Above-mentioned some seed crystal grooves can be arranged on the resilient coating, and the degree of depth of seed crystal groove is about 1/4～3/4 of buffer layer thickness, and preferred depth is 1/2 of a buffer layer thickness.
Above-mentioned some seed crystal grooves can be arranged on the glass substrate, and the degree of depth of seed crystal groove is about 20～80nm, and preferred depth is about 50nm.
By the active matrix/organic light emitting display that technical solution of the present invention is made, drive thin film transistors has better consistency, thereby improves the overall performance that is applied to AMOLED displays such as mobile communication equipment, video playback apparatus and display device.
Description of drawings
Figure 1A is the structural representation of active matrix/organic light emitting display array base palte;
Figure 1B is the circuit diagram that dashed region is amplified among Fig. 1;
Fig. 1 C is the device architecture schematic diagram of single pixel among Fig. 1;
Following Fig. 2 A～Fig. 2 L is each processing step diagram of the embodiment of the invention 1 described display array substrate manufacture method:
Fig. 2 A is the schematic cross-section that the embodiment of the invention 1 forms resilient coating;
Fig. 2 B is the schematic cross-section that the embodiment of the invention 1 forms the seed crystal groove;
Fig. 2 C is the schematic cross-section that the embodiment of the invention 1 forms amorphous silicon layer;
Fig. 2 D is the floor map that the embodiment of the invention 1 forms amorphous silicon layer;
Fig. 2 E is the schematic cross-section that the embodiment of the invention 1 forms the polysilicon silicon island;
Fig. 2 F is the schematic cross-section that the embodiment of the invention 1 forms gate insulation layer;
Fig. 2 G is the schematic cross-section that the embodiment of the invention 1 forms grid;
Fig. 2 H is the schematic cross-section that the embodiment of the invention 1 forms interlayer insulating film;
Fig. 2 I is the schematic cross-section that the embodiment of the invention 1 forms source electrode, drain electrode through hole;
Fig. 2 J is the schematic cross-section that the embodiment of the invention 1 forms source electrode, drain electrode;
Fig. 2 K is the schematic cross-section that the embodiment of the invention 1 forms passivation layer;
Fig. 2 L is the schematic cross-section that the embodiment of the invention 1 forms indium-tin oxide electrode;
Fig. 3 A is the schematic cross-section that the embodiment of the invention 2 forms the seed crystal groove;
Fig. 3 B is the schematic cross-section that the embodiment of the invention 2 forms resilient coating and amorphous silicon layer.
Embodiment
For allowing foregoing of the present invention become apparent, preferred embodiment cited below particularly, and be described in detail below in conjunction with the accompanying drawings.
Embodiment 1
Figure 1A is the structural representation of active matrix/organic light emitting display array base palte, and Figure 1B is the circuit diagram that dashed region is amplified among Figure 1A, and Fig. 1 C is the device architecture schematic diagram of single pixel among Figure 1A.As shown in the figure, this array base palte comprises glass substrate 101, is disposed at a plurality of pixels 102 on this substrate, and is arranged, many the data wires 103 of configured in parallel between pixel, and parallelly be disposed between the pixel and the multi-strip scanning line 104 vertical with data wire.Figure 1B is the circuit diagram that dashed region is amplified among Figure 1A, as shown in the figure, have a switch region 105 and a drive area 106 in the pixel region of described pixel 102, has switching thin-film transistor 107 in the described switch region 105, have drive thin film transistors 108 in the described drive area 106, also comprise storage capacitance 109 and OLED organic luminescent device 110.Fig. 1 C is the device architecture schematic diagram of single pixel among Figure 1A, below by illustrated switch region A-A " cross section and drive area B-B " cross section describes the preparation technology of thin-film transistors in two zones.
Fig. 2 A～Fig. 2 L is each processing step diagram of the embodiment of the invention 1 described display array substrate manufacture method.Shown in Fig. 2 A, method with chemical vapor deposition (CVD) prepares layer of sin x or SiNx/SiOx resilient coating 202 on glass substrate 201 earlier, thickness is about 100nm, on resilient coating 202, adopt the method for etching to form some seed crystal grooves 203 then, shown in Fig. 2 B and Fig. 2 C, some seed crystal grooves 203 are on the column direction of array base palte and are arranged in parallel, spacing L is the design pitch of adjacent two pixel drive TFT, the seed crystal depth of groove is about 1/4～3/4 of resilient coating 202 thickness, and it is 1/2 of buffer layer thickness that present embodiment is chosen the degree of depth.Deposition one deck amorphous silicon layer 204 on resilient coating 202 then, thickness is about 50nm, shown in Fig. 2 D, amorphous silicon layer 204 when deposition corresponding to resilient coating 202 in seed crystal groove 203 positions also can take advantage of a situation and form corresponding grooves structure 205.Change amorphous silicon layer into polysilicon layer by quasi-molecule laser annealing (ELA) or solid-phase crystallization crystallization methods such as (SPC) then.Adopt photoetching method on polysilicon layer, to form pattern, shown in Fig. 2 E, respectively at A-A " place, sectional position and B-B " formation silicon island 206 and 207, place, sectional position, silicon island 207 is positioned at seed crystal groove 203.Next with established some silicon island polysilicon raceway groove that is thin-film transistor and prepare thin-film transistor TFT thereon, below be that example describes with silicon island 207.According to the processing step shown in Fig. 2 F～Fig. 2 H, preparation gate insulation layer 208, grid 209, interlayer insulating film 210 on the established in the above successively array base palte, then as forming source electrode, drain electrode through hole 211,212 on Fig. 2 interlayer insulating film that I is shown in 210 and the gate insulation layer 208, prepare source electrode 213 and drain electrode 214 again, the two is that silicon island 207 is electrically connected by through hole 211,212 and polysilicon raceway groove respectively, shown in Fig. 2 J.Form passivation layer 215 thereon after having prepared source electrode, drain electrode, shown in Fig. 2 K.For the drive TFT that is positioned at B-B ' zone, then on the passivation layer 215 of its 214 correspondence positions that drain, form electrode through hole 216, form tin indium oxide (ITO) electrode 217 anodes then, shown in Fig. 2 L as the OLED device.Form the OLED device more thereon after finishing the preparation of TFT substrate, finish the manufacturing of active matrix/organic light emitting display.
In the manufacture process of present embodiment active matrix/organic light emitting display, some seed crystal grooves on array base palte, have been formed earlier, amorphous silicon is being converted in the process of polysilicon, with the amorphous silicon in the seed crystal groove is crystal seed, go out bigger polysilicon grain with crystallization, then each drive TFT is formed in the seed crystal groove.Can produce the better tft array substrate of drive TFT consistency by this method, to satisfy the application demand of AMOLED.
Embodiment 2
As shown in Figure 3A, present embodiment adopts the method for etching to form some seed crystal grooves 302 earlier on glass substrate 301, some seed crystal grooves 302 are on the column direction of array base palte and are arranged in parallel, spacing is the design pitch of adjacent two pixel drive TFT, the seed crystal depth of groove is about 20～80nm, and it is 50nm that present embodiment is chosen the degree of depth.Method with chemical vapor deposition (CVD) prepares layer of sin x or SiNx/SiOx resilient coating 303 on glass substrate 301 then, thickness is about 100nm, on resilient coating 303, deposit one deck amorphous silicon layer 304 then, thickness is about 50nm, shown in Fig. 3 B, also can take advantage of a situation corresponding to seed crystal groove 302 positions in the glass substrate 301 when forming resilient coating 303, amorphous silicon layer 304 and form the corresponding grooves structure.Subsequent preparation technology is with reference to embodiment 1.
By the active matrix/organic light emitting display that technical solution of the present invention is made, drive TFT has better consistency, thereby improves the overall performance that is applied to AMOLED displays such as mobile communication equipment, video playback apparatus and display device.
Though the present invention is to disclose as above than preferable embodiment; yet it is not in order to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (13)
1. the manufacture method of an active matrix/organic light emitting display array base palte, described active matrix/organic light emitting display array base palte comprises:
One glass substrate;
And be configured on this glass substrate
A plurality of pixels are arranged;
Many data wires, configured in parallel is between pixel;
Multi-strip scanning line, configured in parallel are between pixel and vertical with data wire;
Have a switch region and a drive area in the pixel region of described pixel,
Have switching thin-film transistor in the described switch region, have drive thin film transistors in the described drive area;
The manufacture method of described active matrix/organic light emitting display array base palte comprises: form a resilient coating on glass substrate, on resilient coating, form an amorphous silicon layer, it is characterized in that, some seed crystal grooves are set on the one deck at least in described glass substrate, resilient coating and amorphous silicon layer.
2. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 1 is characterized in that, described some seed crystal grooves are on the column direction of described array base palte and are arranged in parallel.
3. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 2 is characterized in that, the spacing of described some seed crystal grooves is the design pitch of adjacent two pixel drive thin-film transistors.
4. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 1 is characterized in that, described drive thin film transistors is formed in the described seed crystal groove.
5. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 1 is characterized in that, described some seed crystal grooves are arranged on the resilient coating.
6. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 5 is characterized in that, the degree of depth of described some seed crystal grooves is about 1/4～3/4 of buffer layer thickness.
7. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 6 is characterized in that, the degree of depth of described some seed crystal grooves is about 1/2 of buffer layer thickness.
8. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 1 is characterized in that, described some seed crystal grooves are arranged on the glass substrate.
9. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 8 is characterized in that, the degree of depth of described some seed crystal grooves is about 20～80nm.
10. the manufacture method of a kind of active matrix/organic light emitting display array base palte as claimed in claim 9 is characterized in that, the degree of depth of described some seed crystal grooves is about 50nm.
11. an active matrix/organic light emitting display comprises the active matrix/organic light emitting display array base palte of being made by the described manufacture method of claim 1.
12. a mobile communication equipment is characterized in that described mobile communication equipment comprises active matrix/organic light emitting display as claimed in claim 11.
13. a video playback apparatus is characterized in that described video playback apparatus comprises active matrix/organic light emitting display as claimed in claim 11.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104064451A (en) * | 2014-07-10 | 2014-09-24 | 深圳市华星光电技术有限公司 | Low-temperature poly-silicon manufacturing method, method for manufacturing TFT substrate by utilization of low-temperature poly-silicon manufacturing method, and TFT substrate structure |
| CN107818991A (en) * | 2017-10-23 | 2018-03-20 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display panel |
| CN108364963A (en) * | 2018-04-03 | 2018-08-03 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display panel and display device |
| CN113345968A (en) * | 2021-05-31 | 2021-09-03 | 武汉华星光电技术有限公司 | Thin film transistor, manufacturing method of thin film transistor and display panel |
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| KR20040078978A (en) * | 2003-03-05 | 2004-09-14 | 삼성에스디아이 주식회사 | TFT and method for fabricating the same |
| CN101150142A (en) * | 2006-09-19 | 2008-03-26 | 三星电子株式会社 | Organic electro-luminescent display and method of fabricating the same |
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| KR20040078978A (en) * | 2003-03-05 | 2004-09-14 | 삼성에스디아이 주식회사 | TFT and method for fabricating the same |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102891107A (en) * | 2012-10-19 | 2013-01-23 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN102891107B (en) * | 2012-10-19 | 2015-03-25 | 京东方科技集团股份有限公司 | Low temperature polysilicon base plate and manufacturing method thereof |
| CN104064451A (en) * | 2014-07-10 | 2014-09-24 | 深圳市华星光电技术有限公司 | Low-temperature poly-silicon manufacturing method, method for manufacturing TFT substrate by utilization of low-temperature poly-silicon manufacturing method, and TFT substrate structure |
| WO2016004665A1 (en) * | 2014-07-10 | 2016-01-14 | 深圳市华星光电技术有限公司 | Low-temperature poly-silicon manufacturing method, method for manufacturing tft substrate by using low-temperature poly-silicon manufacturing method, and tft substrate structure |
| CN107818991A (en) * | 2017-10-23 | 2018-03-20 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display panel |
| US10818694B2 (en) | 2017-10-23 | 2020-10-27 | Boe Technology Group Co., Ltd. | Array substrate, preparation method thereof and display panel |
| CN108364963A (en) * | 2018-04-03 | 2018-08-03 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display panel and display device |
| US11387257B2 (en) | 2018-04-03 | 2022-07-12 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof, display panel and display device |
| CN113345968A (en) * | 2021-05-31 | 2021-09-03 | 武汉华星光电技术有限公司 | Thin film transistor, manufacturing method of thin film transistor and display panel |
| CN113345968B (en) * | 2021-05-31 | 2022-07-12 | 武汉华星光电技术有限公司 | Thin film transistor, manufacturing method of thin film transistor and display panel |
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Application publication date: 20110406 |