CN107146855A - Oled substrate and preparation method thereof, display device - Google Patents
Oled substrate and preparation method thereof, display device Download PDFInfo
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- CN107146855A CN107146855A CN201710343040.XA CN201710343040A CN107146855A CN 107146855 A CN107146855 A CN 107146855A CN 201710343040 A CN201710343040 A CN 201710343040A CN 107146855 A CN107146855 A CN 107146855A
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 63
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- 238000000034 method Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 30
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- 238000000059 patterning Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
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- 238000005516 engineering process Methods 0.000 abstract description 3
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- 239000010409 thin film Substances 0.000 description 9
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- 239000010949 copper Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910001257 Nb alloy Inorganic materials 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
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Abstract
The present invention provides a kind of oled substrate and preparation method thereof, display device, belongs to display technology field.The oled substrate of the present invention, including：Substrate, switching transistor and driving transistor on the substrate is set, the switching transistor is different with the material of the active layer of the driving transistor, and electron mobility of the electron mobility more than the active layer of the driving transistor of the active layer of the switching transistor.It may therefore be assured that the switching speed of switching transistor, improves the performance of substrate.And, when more in the prior art using the switching transistor and driving transistor of the active layer of identical material, by the wider of the active layer making of driving transistor, for the technical scheme of the mobility of the active layer that reduces driving transistor, the width of the active layer of driving transistor need not be widened in the application, so as to reduce the size of driving transistor, and then more high-resolution display can be realized.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to an OLED substrate, a preparation method thereof and a display device.
Background
Compared with the current mainstream Display technology Thin Film transistor Liquid Crystal Display (TFT-LCD), the Organic Light Emitting Display (OLED) has the advantages of wide viewing angle, high brightness, high contrast, low energy consumption, lighter and thinner volume, and the like, and is a focus of the current flat panel Display technology. Driving methods of the organic light emitting display are classified into a Passive Matrix (PM) and an Active Matrix (AM). Compared with passive matrix driving, active matrix driving has the advantages of large information display amount, low power consumption, long service life of devices, high picture contrast and the like.
As shown in fig. 1, a driving circuit of an active matrix type organic light emitting display device generally includes a switching transistor, a driving transistor, and an Organic Light Emitting Device (OLED). The gate of the switching transistor is connected to the scan line, the drain (or source) thereof is connected to the data line 5, and the source (or drain) thereof is connected to the gate of the driving transistor. The source (or drain) of the driving transistor is connected with a power line, the drain (or source) of the driving transistor is connected with the anode of the OLED, the cathode of the OLED is grounded, and a storage capacitor is connected between the source (or drain) and the grid of the driving transistor. Among them, in order to increase the switching rate, it is generally necessary to use a switching transistor with higher electron mobility; in order to better realize that the OLED displays different gray scales, the electron mobility of the driving transistor is required to be lower. In the prior art, the switching transistor and the driving transistor are made into thin film transistors with the same performance parameters, so that the switching thin film transistor is not easy to be effectively turned on and off and the control of gray scale is not facilitated.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides an OLED substrate with good switching performance, a preparation method thereof and a display device.
The technical scheme adopted for solving the technical problem of the invention is an OLED substrate, which comprises: the transistor comprises a substrate, a switching transistor and a driving transistor, wherein the switching transistor and the driving transistor are arranged on the substrate, the materials of active layers of the switching transistor and the driving transistor are different, and the electron mobility of the active layer of the switching transistor is larger than that of the active layer of the driving transistor.
Preferably, the electron mobility of the active layer of the switching transistor is greater than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1-10 cm2/VS。
Preferably, the material of the active layer of the switching transistor includes: any one of ZnO, ZnON, IGZXO and ITZO;
the material of the active layer of the driving transistor includes IGZO or IGZTO.
Preferably, the active layer of the switching transistor includes two layers of structures sequentially disposed above the active layer, wherein the first layer of structure of the active layer and the active layer of the driving transistor are disposed in the same layer and have the same material.
The technical scheme adopted for solving the technical problem of the invention is a preparation method of an OLED substrate, which comprises the following steps: a step of forming a pattern including an active layer of the switching transistor and an active layer of the driving transistor on the substrate through a patterning process; wherein the active layers of the switching transistor and the driving transistor are made of different materials, and the electron mobility of the active layer of the switching transistor is greater than that of the active layer of the driving transistor.
Preferably, the step of forming a pattern including an active layer of the switching transistor and an active layer of the driving transistor on the substrate through a patterning process specifically includes:
forming a first semiconductor material layer on a substrate, and forming a pattern including an active layer of the driving transistor through a patterning process;
forming a second semiconductor material layer on the substrate after the steps, and forming a pattern comprising an active layer of the switching transistor through a composition process;
or,
forming a second semiconductor material layer on the substrate, and forming a pattern including an active layer of the switching transistor through a patterning process;
and forming a first semiconductor material layer on the substrate after the steps, and forming a pattern including an active layer of the driving transistor through a patterning process.
Preferably, the step of forming an active layer including a switching transistor and an active layer including a driving transistor on a substrate through a patterning process specifically includes:
sequentially depositing a first semiconductor material layer and a second semiconductor material layer on a substrate, and coating a photoresist layer above the second semiconductor material layer;
exposing and developing the photoresist layer with different precisions to form a photoresist reserved area, a photoresist semi-reserved area and a photoresist completely removed area; the photoresist reserved area corresponds to the position of an active layer of the switch transistor to be formed, and the photoresist semi-reserved area corresponds to the position of the active layer of the drive transistor to be formed;
removing the photoresist in the photoresist complete removal area and part of the photoresist in the photoresist semi-reserved area so as to enable the thickness of the residual photoresist in the photoresist semi-reserved area to be a first thickness;
sequentially removing the second semiconductor material layer and the first semiconductor material layer corresponding to the photoresist complete removal area;
removing the photoresist with the first thickness;
removing the second semiconductor material layer corresponding to the photoresist semi-reserved area to form an active layer of the driving transistor;
and removing the residual photoresist to form an active layer of the switch transistor.
Preferably, the electron mobility of the active layer of the switching transistor is greater than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1-10 cm2/VS。
Preferably, the material of the active layer of the switching transistor includes: any one of ZnO, ZnON, IGZXO and ITZO;
the material of the active layer of the driving transistor includes IGZO or IGZTO.
The technical scheme adopted for solving the technical problem of the invention is a display device which comprises the OLED substrate.
The invention has the following beneficial effects:
in the OLED substrate of the present invention, since the materials of the switching transistor and the driving transistor are different, and the electron mobility of the active layer of the switching transistor is greater than that of the active layer of the driving transistor, that is, the electron mobility of the active layer of the switching transistor is selected to be greater, and the electron mobility of the active layer of the driving transistor is selected to be smaller, the switching speed of the switching transistor can be ensured, and the performance of the substrate can be improved. In addition, compared with the technical scheme that the active layer of the driving transistor is made wider to reduce the mobility of the active layer of the driving transistor when the switching transistor and the driving transistor which are made of the same material and have the active layers are adopted in the prior art, the width of the active layer of the driving transistor does not need to be widened in the application, so that the size of the driving transistor can be reduced, and higher-resolution display can be realized.
Drawings
Fig. 1 is a schematic structural diagram of an OLED substrate according to embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of another OLED substrate according to embodiment 1 of the present invention;
fig. 3 is a flowchart of a method for manufacturing an OLED substrate according to embodiment 2 of the present invention;
FIG. 4 is a flow chart of another method of fabricating an OLED substrate according to embodiment 2 of the present invention;
fig. 5 is a circuit diagram of a pixel unit on an OLED substrate.
Wherein the reference numerals are: 10. a substrate; 11. a gate of the driving transistor; 12. a gate of the switching transistor; 3. a gate insulating layer; 21. an active layer of a driving transistor; 22. an active layer of a switching transistor; 40. etching the barrier layer; 41. 42, 43, 44, contact vias; 51. a source 52 of the drive transistor, a drain of the drive transistor; 53. a source of a switching transistor; 5. a drain of the switching transistor; 6. a photoresist layer; 60. removing the photoresist from the complete removal area; 61. a photoresist semi-reserved region; 62. a photoresist retention region; 63. the remaining photoresist; STFT, switching on transistor, DTFT, driving transistor.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example 1:
as shown in fig. 1 and 2, the present embodiment provides an OLED substrate including: the organic light emitting diode comprises a substrate 10, a switching transistor STFT and a driving transistor DTFT which are arranged on the substrate 10, wherein the materials of active layers 12 of the switching transistor STFT and the driving transistor are different, and the electron mobility of an active layer 22 of the switching transistor is larger than that of the active layer 12 of the driving transistor.
In this embodiment, the difference between the materials of the active layers 12 of the switching transistor STFT and the driving transistor means that the active layer materials of the switching transistor STFT and the driving transistor are not completely the same, but some of the components may be the same.
In the OLED substrate of this embodiment, since the materials of the switching transistor STFT and the driving transistor DTFT are different, and the electron mobility of the active layer 22 of the switching transistor is greater than the electron mobility of the active layer 12 of the driving transistor, that is, the electron mobility of the active layer 22 of the switching transistor is selected to be greater, and the electron mobility 12 of the active layer of the driving transistor is selected to be smaller, the switching speed of the switching transistor STFT can be ensured, and the performance of the OLED substrate can be improved. Moreover, compared with the technical scheme that when the switching transistor STFT and the driving transistor DTFT of the active layer made of the same material are adopted in the prior art, the width of the active layer 12 of the driving transistor does not need to be widened to reduce the mobility of the active layer 12 of the driving transistor, so that the size of the driving transistor DTFT can be reduced, and higher-resolution display can be realized.
Wherein the electron mobility of the active layer 22 of the switching transistor is greater than 50cm2(iv)/VS; the electron mobility of the active layer 12 of the driving transistor is 1-10 cm2/VS。
Wherein the material of the active layer 22 of the switching transistor comprises: any one of ZnO, ZnON, IGZXO and ITZO; wherein, X in the IGZXO represents some elements such as Sn, and the purpose is to dope some other components on the basis of IGZO so as to improve the mobility of the IGZO; the material of the active layer 12 of the driving transistor includes IGZO, IGZTO, etc., and may be specifically set according to the specific situation.
The active layer 22 of the switching transistor in this embodiment includes two layers (221 and 222) sequentially disposed above the substrate 10, wherein the first layer 221 and the active layer 12 of the driving transistor are disposed in the same layer and made of the same material. This is so arranged because the active layer 12 of the switching transistor STFT and the driving transistor of such a structure can adopt one patterning process step. The method for manufacturing the OLED substrate in example 2 will be specifically described. Of course, the active layers 12 of the switching transistor STFT and the driving transistor may each be a single-layer structure.
It should be noted that each of the switching transistor and the driving transistor further includes a gate (11, 21), a source and a drain (51, 52, 53, 54); a gate insulating layer 3 between the gate and the active layer; and an etching barrier layer 40 positioned between the source and drain electrode layers and the active layer. Of course, other known structures are not listed here.
Example 2:
this example provides a method for fabricating an OLED substrate, which can be used to fabricate the OLED substrate in example 1. Both the switching transistor STFT and the driving transistor DTFT may be top gate type or bottom gate type thin film transistors. When the switching transistor STFT and the driving transistor DTFT are both bottom gate thin film transistors, as shown in fig. 3, the method for manufacturing the OLED array substrate specifically includes the steps of:
step one, a gate 21 of the switching transistor and a gate 11 of the driving transistor are simultaneously formed on the substrate 10 through processes of sputtering, exposure, development, etching, stripping and the like.
The material of the gate electrode 21 of the switching transistor and the gate electrode 11 of the driving transistor may be a single-layer or multi-layer composite stack formed of one or more of molybdenum (Mo), molybdenum niobium alloy (MoNb), aluminum (Al), aluminum neodymium alloy (AlNd), tungsten (W), titanium (Ti), and copper (Cu).
And step two, forming a gate insulating layer 3 on the substrate 10 after the step.
The material of the gate insulating layer 3 may be one of silicon oxide (SiOx), silicon nitride (SiNx), hafnium oxide (HfOx), silicon oxynitride (SiON), aluminum oxide (AlOx), or a multilayer composite film including two of these materials.
And step three, forming a first semiconductor material layer on the substrate 10 after the step is finished, and forming a pattern comprising the active layer 12 of the driving transistor through a patterning process.
Wherein the material of the first semiconductor material layer includes IGZO, IGZTO, or the like; the electron mobility is 1-10 cm2/VS。
And step four, forming a second semiconductor material layer on the substrate 10 after the step, and forming a pattern comprising the active layer 22 of the switching transistor through a patterning process.
Wherein, the material of the second semiconductor material layer comprises: any one of ZnO, ZnON, IGZXO and ITZO; in the IGZXO, X represents some element such as Sn in order to increase mobility of IGZO by doping IGZO with some other component. The electron mobility of the active layer 22 of the switching transistor is greater than 50cm2/VS。
And step five, forming an etching barrier layer 40 on the substrate 10 after the step is finished.
The material of the etching barrier layer 40 may be any one or a combination of several of silicon oxide (SiOx), silicon nitride (SiNx), hafnium oxide (HfOx), silicon oxynitride (SiON), aluminum oxide (AlOx), or an organic material.
And step six, penetrating contact through holes (41, 42, 43 and 44) of the etching barrier layer 40 on the substrate 10 which is subjected to the steps and corresponds to the source electrode and the drain electrode of the switch thin film transistor and the driving thin film transistor.
And seventhly, forming a pattern comprising source electrodes and drain electrodes (51, 52, 53 and 54) of the switching thin film transistor and the driving thin film transistor on the substrate 10 after the steps are completed through a patterning process, wherein the source electrodes and the drain electrodes of the switching transistor STFT and the driving transistor DTFT are respectively connected with the respective active layers through contact through holes.
The source electrode and the drain electrode may be a single-layer or multi-layer composite stack formed of one or more materials selected from molybdenum (Mo), molybdenum-niobium alloy (MoNb), aluminum (Al), aluminum-neodymium alloy (AlNd), titanium (Ti), and copper (Cu).
As shown in fig. 5, it is needless to say that the above steps may be completed by forming a passivation layer covering the source electrode and the drain electrode, forming a contact via hole penetrating through the passivation layer above the drain electrode (or the source electrode) of the driving thin film transistor, forming a PIXEL electrode layer above the passivation layer, the PIXEL electrode layer being connected to the drain electrode (or the source electrode) through the contact via hole penetrating through the passivation layer, forming a PIXEL defining layer (PDL; PIXEL DESIGN LAYER) above the PIXEL electrode layer, i.e., the anode layer of the organic electroluminescent device D1, and evaporating the light emitting layer and a cathode layer required for the light emitting layer on the PIXEL electrode layer.
The gate 21 of the switching transistor is connected to the scanning line vscan (n), the drain 54 (or the source 53) thereof is connected to the data line Vdata, and the source (or the drain) thereof is connected to the gate 11 of the driving transistor. The source 51 (or drain 52) of the driving transistor is connected to a power supply line VDD, the drain 52 (or source 51) thereof is connected to the anode of the OLED, the cathode of the OLED is grounded GND, and a storage capacitor C1 is connected between the source 51 (or drain 52) and the gate 11 thereof.
Wherein the sequence of the third step and the fourth step can be interchanged. And will not be described in detail herein.
As shown in fig. 4, in order to simplify the process of fabricating the OLED substrate, the present embodiment further provides a method for fabricating the OLED substrate, which is different from the above-mentioned method for fabricating the OLED substrate only in the fabrication of the active layer 22 of the switching transistor and the active layer 12 of the driving transistor, so that only the detailed description of the messages for fabricating the active layer 22 of the switching transistor and the active layer 12 of the driving transistor is provided below, and the description of the rest parts is not repeated.
A first layer 1 of semiconductor material and a second layer 2 of semiconductor material are deposited in sequence on a substrate 10, and a layer 6 of photoresist is applied over said second layer 1 of semiconductor material.
Exposing and developing the photoresist layer 6 with different precisions to form a photoresist reserved area 62, a photoresist semi-reserved area 61 and a photoresist completely removed area 60; the photoresist reserved area corresponds to the position of the active layer 22 of the switching transistor to be formed, and the photoresist semi-reserved area corresponds to the position of the active layer 12 of the driving transistor to be formed.
And removing the photoresist in the photoresist complete removal area and part of the photoresist in the photoresist semi-reserved area so as to enable the thickness of the residual photoresist in the photoresist semi-reserved area to be the first thickness.
And sequentially removing the second semiconductor material layer and the first semiconductor material layer corresponding to the photoresist complete removal area.
And removing the photoresist with the first thickness.
Removing the second semiconductor material layer corresponding to the photoresist semi-reserved region to form an active layer 12 of the driving transistor;
the remaining photoresist is removed to form the active layer 11 of the switching transistor.
Example 3:
the present embodiment provides a display device including the OLED substrate of embodiment 1. The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
Since the display device in this embodiment includes the OLED substrate in embodiment 1, it has a higher resolution.
Of course, other conventional structures, such as a power supply unit, a display driving unit, and the like, may also be included in the display device of the present embodiment.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. An OLED substrate comprising: the liquid crystal display device comprises a substrate, a switching transistor and a driving transistor, wherein the switching transistor and the driving transistor are arranged on the substrate, the materials of active layers of the switching transistor and the driving transistor are different, and the electron mobility of the active layer of the switching transistor is larger than that of the active layer of the driving transistor.
2. The OLED substrate of claim 1, wherein the electron mobility of the active layer of the switching transistor is greater than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1-10 cm2/VS。
3. The OLED substrate of claim 1, wherein the material of the active layer of the switching transistor comprises: any one of ZnO, ZnON, IGZXO and ITZO;
the material of the active layer of the driving transistor includes IGZO or IGZTO.
4. The OLED substrate of claim 1, wherein the active layer of the switching transistor comprises a two-layer structure sequentially disposed on the upper side, wherein a first layer of the active layer is disposed in the same layer and is the same material as the active layer of the driving transistor.
5. A method for preparing an OLED substrate is characterized by comprising the following steps: a step of forming an active layer pattern including an active layer of a switching transistor and an active layer of a driving transistor on a substrate through a patterning process; wherein the active layers of the switching transistor and the driving transistor are made of different materials, and the electron mobility of the active layer of the switching transistor is greater than that of the active layer of the driving transistor.
6. The method for preparing the OLED substrate according to claim 5, wherein the step of forming a pattern including an active layer of the switching transistor and an active layer of the driving transistor on the substrate through a patterning process specifically comprises:
forming a first semiconductor material layer on a substrate, and forming a pattern including an active layer of the driving transistor through a patterning process;
forming a second semiconductor material layer on the substrate after the steps, and forming a pattern comprising an active layer of the switching transistor through a composition process;
or,
forming a second semiconductor material layer on the substrate, and forming a pattern including an active layer of the switching transistor through a patterning process;
and forming a first semiconductor material layer on the substrate after the steps, and forming a pattern including an active layer of the driving transistor through a patterning process.
7. The method for preparing the OLED substrate according to claim 5, wherein the step of forming the active layer comprising the switching transistor and the driving transistor on the substrate by the patterning process specifically comprises:
sequentially depositing a first semiconductor material layer and a second semiconductor material layer on a substrate, and coating a photoresist layer above the second semiconductor material layer;
exposing and developing the photoresist layer with different precisions to form a photoresist reserved area, a photoresist semi-reserved area and a photoresist completely removed area; the photoresist reserved area corresponds to the position of an active layer of the switch transistor to be formed, and the photoresist semi-reserved area corresponds to the position of the active layer of the drive transistor to be formed;
removing the photoresist in the photoresist complete removal area and part of the photoresist in the photoresist semi-reserved area so as to enable the thickness of the residual photoresist in the photoresist semi-reserved area to be a first thickness;
sequentially removing the second semiconductor material layer and the first semiconductor material layer corresponding to the photoresist complete removal area;
removing the photoresist with the first thickness;
removing the second semiconductor material layer corresponding to the photoresist semi-reserved area to form an active layer of the driving transistor;
and removing the residual photoresist to form an active layer of the switch transistor.
8. The method of claim 5, wherein electrons of an active layer of the switching transistor are emitted from the OLED substrateMobility greater than 50cm2/VS；
The electron mobility of the active layer of the driving transistor is 1-10 cm2/VS。
9. The method of claim 5, wherein the material of the active layer of the switching transistor comprises: any one of ZnO, ZnON, IGZXO and ITZO;
the material of the active layer of the driving transistor includes IGZO or IGZTO.
10. A display device comprising the OLED substrate according to any one of claims 1 to 3.
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| CN201710343040.XA CN107146855A (en) | 2017-05-16 | 2017-05-16 | Oled substrate and preparation method thereof, display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256464A (en) * | 2018-11-08 | 2019-01-22 | 深圳市万普拉斯科技有限公司 | OLED display |
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