CN102922413B - Chemical mechanical polishing method - Google Patents
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- CN102922413B CN102922413B CN201110231743.6A CN201110231743A CN102922413B CN 102922413 B CN102922413 B CN 102922413B CN 201110231743 A CN201110231743 A CN 201110231743A CN 102922413 B CN102922413 B CN 102922413B
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Abstract
The invention provides a chemical mechanical polishing method; the chemical mechanical polishing method comprises the step of respectively executing polishing in different stages on two polishing pads, wherein through using surface structures of the two polishing pads or changing polishing paths in the different stages, a first polishing effect of the polishing in the first stage on wafer surface is complementary to a second polishing effect of the polishing in the second stage on the wafer surface; therefore, a polishing weakening area is formed in the second polishing stage if a polishing reinforcing area is formed in the first polishing stage, and a polishing reinforcing area is formed in the second stage if a polishing weakening area is formed in the first stage. Therefore, polishing amounts are uniformly distributed and excessive polishing or insufficient polishing phenomenon is avoided.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of chemical and mechanical grinding method.
Background technology
Along with the develop rapidly of super large-scale integration (Ultra Large Scale Intergration, ULSI), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous.In order to improve integrated level, reduce manufacturing cost, the characteristic size (Feature Size) of device constantly diminishes, the number of elements of chip unit are constantly increases, the difficult requirement meeting the distribution of element high density of plane routing, can only polylaminate wiring technique be adopted, utilize the vertical space of chip, improve the integration density of device further.
But the application of polylaminate wiring technique can cause silicon chip surface uneven, extremely unfavorable to graphic making.For this reason, need to carry out planarized (Planarization) process to uneven wafer surface.At present, chemical mechanical milling method (Chemical Mechanical Polishing, CMP) be the best approach reaching global planarizartion, especially, after semiconductor fabrication process enters sub-micron (sub micron) field, cmp has become an indispensable Manufacturing Techniques.
Chemical mechanical milling method (CMP) is a kind of flattening method that the material layer of semicon-ductor structure surface is removed by the mode combined by chemical reaction and mechanical lapping.Refer to Fig. 1, Fig. 1 is a kind of existing chemical mechanical polishing device.This device comprises: shell 101, and the turntable (platen) 102 of grinding pad (polish pad) is posted on surface, grinding head 103a, 103b and for carrying the lapping liquid supply pipe 104 of lapping liquid (slurry) 105.
During grinding, first by wafer adsorption to be ground on grinding head 103, by applying pressure on grinding head 103, make wafer be pressed onto on grinding pad; Then, the turntable 102 that grinding pad is posted on surface rotates under the drive of motor, and grinding head 103 also carries out rotating in same direction, realizes mechanical lapping; Simultaneously, lapping liquid 105 is transported on grinding pad by lapping liquid supply pipe 104, and the centrifugal force utilizing turntable to rotate is evenly distributed on grinding pad, one deck fluid film is formed between wafer to be ground and grinding pad, there is chemical reaction in the surface of this film and wafer to be ground, generate the product easily removed, this product is removed under mechanical abrasive action again.
Grinding technics generally needs a point several stage to carry out, such as corase grind, fine grinding etc.When the grinding completing one-phase enters the grinding of next stage, the grinding pad that often use one piece is new is to facilitate the steps such as the replacing of lapping liquid.In order to Simplified flowsheet, factory holds the grinding pad used in whole grinding technics often to have the surface configuration of same specification, simultaneously for the reason on Mechanical course, grinding head can grind with identical motion mode and motion road strength on two pieces of grinding pads, this mode can serve negative effect to grinding effect band, because wafer is in a process of lapping, inevasible meeting occurs that in some region of crystal column surface district is strengthened in grinding, some region then occurs grinding weakened region, if the grinding pad surface configuration that twice grinding in front and back uses is identical, and the words that the wafer path of passing by grinding pad is also identical, then above-mentioned crystal column surface grinds the region be reinforced and is again reinforced, the phenomenon that easy generation is overground, and above-mentioned crystal column surface grinds the region be weakened still has no idea effectively to be ground to, make these local grindings insufficient.These problems are unacceptable concerning grinding technics.
Summary of the invention
In view of this, the present invention proposes a kind of chemical and mechanical grinding method, can be implemented in the grinding effect that on different grinding pad, execution grinding produces can be complementary, namely district is strengthened in the grinding caused in the first grinding stage, grinding weakened region is then formed in the second grinding stage, in the grinding weakened region that the first stage causes, then form grinding in second stage and strengthen district.Realize being evenly distributed of amount of grinding with this, avoid overground or that grinding is not enough phenomenon to occur.
According to a kind of chemical and mechanical grinding method that above-mentioned purpose proposes, comprise step:
1) milling apparatus with the first grinding pad and the second grinding pad is provided, wafer material to be ground is loaded on grinding head;
2) grinding head carries wafer and moves on the first grinding pad, and applies pressure downwards, makes wafer contact the first grinding pad surface downwards;
3) between the first grinding pad and wafer, inject lapping liquid, rotate described first grinding pad and described grinding head;
4) grinding head carries wafer while rotation, and the periodicity of carrying out back and forth along the first abrasion path on grinding pad surface moves, to complete the grinding of first stage;
5) grinding head carries wafer and moves on the second grinding pad, and applies pressure downwards, makes wafer contact the second grinding pad surface downwards;
6) between the second grinding pad and wafer, inject lapping liquid, rotate described second grinding pad and described grinding head;
7) grinding head carries wafer while rotation, and the periodicity of carrying out back and forth along the second abrasion path on grinding pad surface moves, to complete the grinding of second stage.
Optionally, the surface of described first grinding pad or the second grinding pad has many grooves and convex island, and described groove and convex island are spaced with concentric structure.
Optionally, described first grinding pad and the second grinding pad have different surface textures, are the region of groove on the surface of described first grinding pad, on described second grinding pad Shang Zeweitu island; In the region that the surface of described first grinding pad is convex island, it described second grinding pad is then groove.
Optionally, the surface of described first grinding pad or the second grinding pad has many grooves and convex island, and described groove is with the strip groove of the outside diversity in the center of circle, or gathers at the circular hole groove on grinding pad surface.
Optionally, described first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swings.
Optionally, when described wafer arrives grinding pad outermost along the first abrasion path, its center of circle is positioned on convex island; When described wafer arrives grinding pad outermost along the second abrasion path, its center of circle is positioned on groove.
Optionally, when described wafer arrives grinding pad outermost along the first abrasion path, its center of circle is positioned on groove; When described wafer arrives grinding pad outermost along the second abrasion path, its center of circle is positioned on convex island.
Optionally, described first abrasion path or the movement locus of the second abrasion path under one-period are in straight line swing, circle swing, arc swing, sigmoid curve swing, rectangle swing or triangle swing.
Optionally; one or more and described second abrasion path in the starting point of described first abrasion path, movement locus or the direction of motion different, make first grinding effect of wafer on the first grinding pad and the second grinding effect on the second grinding pad have complementary effect.
Above-mentioned chemical and mechanical grinding method, by changing the second abrasion path, different from the first abrasion path, or by the surface texture on change second grinding pad, different from the first grinding pad, realizing first stage grinding causes the grinding of the first grinding effect and second stage to cause the effect of the second grinding effect complementation to crystal column surface to crystal column surface, thus realizes being evenly distributed of amount of grinding, avoids overground or that grinding is not enough phenomenon to occur.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of existing chemical mechanical polishing device.
Fig. 2 is the flow chart of steps of chemical and mechanical grinding method of the present invention.。
Fig. 3 A-3B is a kind of grinding pad of existing concentric structure.
Fig. 4 is when the center of circle is positioned on convex island, the curve map of amount of grinding corresponding on each position of wafer.
Fig. 5 is when the center of circle is positioned on groove, the curve map of amount of grinding corresponding on each position of wafer.
Fig. 6 is the circle centre position linear velocity curve map over time of wafer.
Fig. 7 is after twice grinding, the superposition schematic diagram of grinding effect.
Fig. 8 is the grinding pad comparison diagram of two kinds of different surfaces structures in embodiment two
Detailed description of the invention
Just as described in the background section, existing grinding technics, because the grinding pad used in different phase has identical surface texture, and during grinding, grinding head carries wafer in the surperficial identical path of passing by of grinding pad, makes crystal column surface grind the region strengthened and is repeatedly strengthened, easily produce overground phenomenon, crystal column surface grinds the region of weakening and then has no idea all the time effectively to grind, and makes these local grindings insufficient.
For this situation, the present invention proposes a kind of chemical and mechanical grinding method, this chemical and mechanical grinding method is by two kinds of improved procedures, the first is the abrasion path before and after improving on two pieces of grinding pads, and what such as change in the starting point of the first abrasion path and the second abrasion path, movement locus or the direction of motion is one or more; The second is the surface texture of change two pieces of grinding pads, such as changes the position on the first grinding pad and the second grinding pad surface grooves and convex island, or the shape of change groove and distribution etc.Make in process of lapping, the amount of grinding that wafer produces on the grinding pad of two pieces, front and back can by effective complementation, the i.e. polished region strengthened on first piece of grinding pad, on second piece of grinding pad, then grinding weakens, and on first piece of grinding pad, be polished the region of weakening, then polished reinforcement on second piece of grinding pad.Thus, the amount of grinding of whole crystal column surface is more even, also can not produce overground and that grinding is insufficient problem.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.
Refer to Fig. 2, Fig. 2 is the flow chart of steps of chemical and mechanical grinding method of the present invention.As shown in the figure, this chemical and mechanical grinding method comprises step:
S10: provide the milling apparatus with the first grinding pad and the second grinding pad, is loaded into wafer material to be ground on grinding head.
S11: grinding head carries wafer and moves on the first grinding pad, and applies pressure downwards, makes wafer contact the first grinding pad surface downwards.
S12: pass into the first lapping liquid between the first grinding pad and wafer, rotates described first grinding pad and described grinding head.
S13: grinding head carries wafer while rotation, carries out periodic translation back and forth, to complete the grinding of first stage along the first path on grinding pad surface.
S14: grinding head carries wafer and moves on the second grinding pad, and applies pressure downwards, makes wafer contact the second grinding pad surface downwards.
S15: pass into the second lapping liquid between the second grinding pad and wafer, rotates described second grinding pad and described grinding head.
S16: grinding head carries wafer while rotation, carries out periodic translation back and forth, to complete the grinding of second stage along the second path on grinding pad surface.
Described first stage grinding causes the first grinding effect to crystal column surface, described first grinding effect is some region of wafer is grinding reinforcement district, namely the amount of grinding that obtains of this region is larger, and some region is grinding weakened region, and namely the amount of grinding that obtains of this region is smaller.The grinding of described second stage causes the second grinding effect to crystal column surface, described second grinding effect and the complementation of the first grinding effect, namely district is strengthened in the grinding caused in the first grinding stage, grinding weakened region is then formed in the second grinding stage, in the grinding weakened region that the first stage causes, then form grinding in second stage and strengthen district.
Described first grinding pad and the second grinding pad can have the surface texture of same size, also can have the surface texture of different size.
When the first grinding pad is identical with the surface texture of the second grinding pad; it is one or more that described first path and described second path have in different starting points, movement locus or the direction of motion, and this difference result in the effect of the second grinding effect and the first grinding effect complementation.
When the first grinding pad is different with the surface texture of the second grinding pad; it is one or more that described first path and described second path can have in different starting points, movement locus or the direction of motion, also can have identical starting point, movement locus and the direction of motion.No matter whether the first path is identical with the second tunnel strength, and its object selected is all make the second grinding effect of generation and the first grinding effect have complementary effect.
Below, be described further with the chemical and mechanical grinding method of several concrete embodiments to the invention described above.
Embodiment one:
Embodiment one adopts identical grinding pad, and different abrasion path is described chemical and mechanical grinding method of the present invention, and the grinding pad adopted is the grinding pad with concentric structure.
Please refer to Fig. 3 A-3B, Fig. 3 A-3B is a kind of grinding pad of existing concentric structure.As shown in the figure, on grinding pad 110 surface, groove 111 and the convex island 112 of many concentric structures is provided with, being arranged on grinding pad 110 of described groove 111 and interval, convex island 112.By these grooves 111, the distribution of lapping liquid on grinding pad 110, the flowing of fresh ground liquid in milling zone, the flowing of flowing out from milling zone with the lapping liquid crossed can be improved and flow through milling zone and substantially not by the proportion etc. of lapping liquid used.
Particularly, to grind 8 cun of wafers (diameter is about 200mm), the diameter of usual grinding pad is greater than 500mm, and now, the width can choosing groove 111 is 10mm, and the width on convex island 112 is 20mm.
First consider the simplest motion mode, suppose that grinding head 120 does not have the motion of translation on grinding pad 110, then now considered motion is exactly the rotation of grinding head 120 and the rotation of grinding pad 110.Now when grinding head 120 carry wafer 130 grind on grinding pad time, the center of circle of wafer has two kinds of situations:
The first situation is that the center of circle is positioned on the convex island 112 of grinding pad, then now wafer circle centre position be in mechanical lapping state with grinding pad Mechanical Contact all the time but, the amount of grinding of circle centre position is maximum, is considered as the grinding of 100%.By grinding pad radial direction outward, at the width place (supposing that the centre position on convex island 112 is just in time dropped in the center of circle) on half convex island from the center of circle, come the position corresponding to a groove 111, can not have abrasive action to wafer above groove 111, be therefore minimum in the grinding wafer amount in this region.But it should be noted, amount of grinding is not zero herein, because wafer self has rotation under the drive of grinding head, simultaneous grinding pad is also rotating, and therefore for a moment the place of the half convex island width in the wafer distance center of circle is on convex island, to be for a moment in alternately change on groove.When investigating half, the distance center of circle convex island width on wafer to any amount of grinding of certain on the annulus of a groove width, its computational methods should be: wafer rotates one week relative to grinding pad, be on convex island time/be in time * 100% on groove.The like, can calculate whole wafer amount of grinding curve in radial directions, be when the center of circle is positioned on convex island with reference to figure 4, Fig. 4, the curve map of amount of grinding corresponding on each position of wafer.As shown in the figure, wherein abscissa is diameter wafer, and ordinate is amount of grinding.Maximum at the amount of grinding at wafer home position (i.e. 0 position of abscissa) place, and the position corresponding to the first amount of grinding minimum that both sides, the center of circle occur is just in time the position that on grinding pad, groove occurs, then by convex island-groove-convex island ... order there is amount of grinding maximum and minimum successively, and maximum and minimum are vibrated successively and are progressively reduced
The second situation is that the center of circle of wafer is positioned on groove 111, and now just in time contrary with upper a kind of situation, the center of circle of wafer is not ground to all the time, and its amount of grinding is designated as 0%.Please refer to Fig. 5, Fig. 5 is the center of circle of wafer when being positioned on groove, amount of grinding curve map corresponding on each position of wafer.As shown in the figure, wherein abscissa is diameter wafer, and ordinate is amount of grinding.Minimum at the amount of grinding at wafer home position (i.e. 0 position of abscissa) place, and the position corresponding to the first amount of grinding maximum that both sides, the center of circle occur is just in time the position that grinding pad epirelief island occurs, then groove-convex island-groove is pressed ... order there is amount of grinding minimum and maximum successively, and minimum and maximum are vibrated successively and are progressively reduced.
And when grinding head 120 carry the radial direction of wafer 130 also along grinding pad on grinding pad do straight line back and forth swing time, grinding pad except positional factor, also needs the linear velocity considering at a time circle centre position except considering the center of circle on grinding pad to the amount of grinding of wafer.If the linear velocity in the center of circle is larger, then the amount of grinding produced in the unit interval is larger, otherwise then amount of grinding is less.
As shown in Figure 6, Fig. 6 is the circle centre position linear velocity curve map over time of wafer.As shown in the figure, wherein abscissa is the time of wafer movement, and ordinate is the existing speed of wafer circle centre position.Supposing to carry wafer by grinding head, to do the cycle moved back and forth be 6 seconds, and the maximum displacement of motion is 50mm.Within the time of 60 seconds, grinding head carries wafer and has done 10 times altogether and swing back and forth.Its linear velocity maximum appears at wafer when moving to the outermost of grinding pad, and the minimum of a value of linear velocity then appears at wafer and moves to nearest place, the distance grinding pad center of circle.
If the starting point in the center of circle is the side, the center of circle near grinding pad, and grinding direction is along grinding pad radial direction outward.Then according to the relation of amount of grinding and center of circle linear velocity, the center of circle is moved more outward, and its linear velocity is larger, and amount of grinding is larger.Therefore judge the size of general abrasive amount after one-period, the main center of circle that relies on when being positioned at outermost, namely swings destination county during half period, the surperficial Shi Tu island of grinding pad or groove.If terminal Shi Tu island, then integral grinding amount is similar to situation when Zhi Tu island, the center of circle is ground, and namely the amount of grinding of circle centre position is maximum, and amount of grinding maximum and minimum are vibrated successively and progressively reduced.If terminal is groove, then integral grinding amount is similar to the situation of the center of circle only when grinding on groove, and namely the amount of grinding of circle centre position is minimum, and the minimum of amount of grinding and maximum are vibrated successively and progressively reduced.
If the starting point in the center of circle is outside the center of circle away from grinding pad, and grinding direction is along grinding pad radial direction inward.Then according to the relation of amount of grinding and center of circle linear velocity, the center of circle is moved more inward, and its linear velocity is less, and amount of grinding is less.Therefore judge the size of general abrasive amount after one-period, the main center of circle that relies on is when being positioned at outermost, and namely straight line swings starting point place, the surperficial Shi Tu island of grinding pad or groove.If starting point Shi Tu island, then integral grinding amount is similar to situation when Zhi Tu island, the center of circle is ground, and namely the amount of grinding of circle centre position is maximum, and amount of grinding maximum and minimum are vibrated successively and progressively reduced.If starting point is groove, then integral grinding amount is similar to the situation of the center of circle only when grinding on groove, and namely the amount of grinding of circle centre position is minimum, and the minimum of amount of grinding and maximum are vibrated successively and progressively reduced.
According to above-mentioned analysis, when the grinding pad in the present embodiment applies to chemical mechanical method of the present invention, if it is maximum that the first abrasion path on the first grinding pad makes the distribution of the first grinding effect on wafer present circle centre position amount of grinding, amount of grinding maximum and minimum are vibrated successively and are progressively reduced, namely wafer circle centre position and amount of grinding maximum place are that district is strengthened in grinding, when the amount of grinding minimum place of wafer is grinding weakened region, the second abrasion path then on the second grinding pad is selected that the second grinding effect on wafer is had and is carried out with the mode of the first grinding effect complementation, namely circle centre position amount of grinding is minimum, grinding minimum and maximum are shaken successively and progressively reduce, as shown in Figure 7, Fig. 7 is after twice grinding, the superposition schematic diagram of grinding effect.The wherein amount of grinding distribution map that produces under representing the first abrasion path of solid line, the amount of grinding distribution map that dotted line produces under representing the second abrasion path, middle solid line represents the amount of grinding distribution map after twice grinding synthesis.
The mode of concrete selection second abrasion path, can according to starting point and grinding direction difference or after the half period position of terminal do not determine on an equal basis.
Further, grinding head carries the abrasion path of wafer on grinding pad and is not limited only to straight line back and forth and swings, and the movement locus under its one-period also can be circle swing, arc swing, sigmoid curve swing, rectangle swings, triangle swings etc.Now, consider the situation of change of the circle centre position linear velocity of wafer, also need the equation of locus adding abrasion path as its considerations, concrete computational methods will not be launched, those skilled in the art can calculate the concrete condition of linear velocity according to the vector composite analysis of mathematics, then according to the overall determination methods of amount of grinding, on the grinding track of the first abrasion path and the second abrasion path, concrete selection is made according to purport of the present invention.
Embodiment two:
Embodiment two adopts two pieces of different grinding pads, a kind of chemical and mechanical grinding method that identical or different abrasion path is made.This embodiment two essence is the one distortion of embodiment one.Namely the distribution on the first grinding pad 210 and the second grinding pad 210 ' groove and convex island is just in time contrary, first grinding pad 210 is positions of groove, on the upper lucky Shi Tu island of the second grinding pad 210 ', in the position on the first grinding pad 210 Shang Shitu island, the second grinding pad 210 ' is just in time groove.As shown in Figure 8, Fig. 8 is the grinding pad comparison diagram of two kinds of different surfaces structures in embodiment two.In this case, even if do not change the track of the first abrasion path and the second abrasion path, the grinding effect produced also can play complementary effect.
Further, if the change on groove and convex island not only has the difference on position, when to also have on width different, concrete abrasion path can be calculated, adopt different starting points or terminal, or the concrete track of grinding is different, the second grinding effect and the first grinding effect is made to form complementary effect.
It is worth mentioning that, except the grinding pad of above-mentioned concentric structure, the grinding pad of other specifications, the shape of such as groove is with the strip groove of the outside diversity in the center of circle, or gather at the circular hole groove on grinding pad surface, also according to purport of the present invention, the selection of concrete abrasion path can be obtained, make the first grinding effect and the second grinding effect have complementary effect.
In addition, the situation of two pieces of grinding pads is only listed in the present invention, in actual applications, also the situation more than two pieces of grinding pads is likely used, at this moment, chemical and mechanical grinding method of the present invention then develops into the grinding effect that each block grinding pad produces, and the grinding effect produced with other all grinding pad is complementary.
In sum, chemical and mechanical grinding method of the present invention, when first grinding pad and the second grinding pad grind, due to the difference of abrasion path or grinding pad surface texture, the grinding effect that twice grinding in front and back is produced is complementary, when namely grinding on the first grinding pad, the region that on wafer, amount of grinding is strengthened, second grinding pad is in grinding weakened region just, and when grinding on the first grinding pad, the place that on wafer, amount of grinding weakens, the first grinding pad is in region that grinding is strengthened just.With this amount of grinding equalization by twice grinding in front and back, making crystal column surface namely can not cause device failure because of overgrinding, also can not occur because grinding insufficient the phenomenon that surface is uneven.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. a chemical and mechanical grinding method, is characterized in that: described chemical and mechanical grinding method comprises step:
1) milling apparatus with the first grinding pad and the second grinding pad is provided, wafer material to be ground is loaded on grinding head;
2) grinding head carries wafer and moves on the first grinding pad, and applies pressure downwards, makes wafer contact the first grinding pad surface downwards;
3) between the first grinding pad and wafer, inject lapping liquid, rotate described first grinding pad and described grinding head;
4) grinding head carries wafer while rotation, and the periodicity of carrying out back and forth along the first abrasion path on grinding pad surface moves, to complete the grinding of first stage;
5) grinding head carries wafer and moves on the second grinding pad, and applies pressure downwards, makes wafer contact the second grinding pad surface downwards;
6) between the second grinding pad and wafer, inject lapping liquid, rotate described second grinding pad and described grinding head;
7) grinding head carries wafer while rotation, the periodicity of carrying out back and forth along the second abrasion path on grinding pad surface moves, to complete the grinding of second stage, the surface of described first grinding pad or the second grinding pad has many grooves and convex island, described groove and convex island are spaced with concentric structure, described first grinding pad and the second grinding pad have different surface textures, are the region of groove on the surface of described first grinding pad, on described second grinding pad Shang Zeweitu island; In the region that the surface of described first grinding pad is convex island, it described second grinding pad is then groove.
2. a kind of chemical and mechanical grinding method as claimed in claim 1, it is characterized in that: the surface of described first grinding pad or the second grinding pad has many grooves and convex island, described groove is with the strip groove of the outside diversity in the center of circle, or gathers at the circular hole groove on grinding pad surface.
3. a kind of chemical and mechanical grinding method as claimed in claim 1, is characterized in that: described first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swings.
4. a kind of chemical and mechanical grinding method as claimed in claim 3, is characterized in that: when described wafer arrives grinding pad outermost along the first abrasion path, its center of circle is positioned on convex island; When described wafer arrives grinding pad outermost along the second abrasion path, its center of circle is positioned on groove.
5. a kind of chemical and mechanical grinding method as claimed in claim 3, is characterized in that: when described wafer arrives grinding pad outermost along the first abrasion path, its center of circle is positioned on groove; When described wafer arrives grinding pad outermost along the second abrasion path, its center of circle is positioned on convex island.
6. a kind of chemical and mechanical grinding method as claimed in claim 1, is characterized in that: described first abrasion path or the movement locus of the second abrasion path under one-period are one in circle swing, arc swing, sigmoid curve swing, rectangle swing or triangle swing.
7. a kind of chemical and mechanical grinding method as claimed in claim 1; it is characterized in that: one or more and described second abrasion path in the starting point of described first abrasion path, movement locus or the direction of motion different, make first grinding effect of wafer on the first grinding pad and the second grinding effect on the second grinding pad have complementary effect.
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| CN104162830A (en) * | 2013-05-16 | 2014-11-26 | 青岛嘉星晶电科技股份有限公司 | Wafer grinding method |
| CN111421462B (en) * | 2019-01-08 | 2022-03-22 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN109648461B (en) * | 2019-01-14 | 2020-04-28 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Method and device for scanning by grinding head |
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| US5435772A (en) * | 1993-04-30 | 1995-07-25 | Motorola, Inc. | Method of polishing a semiconductor substrate |
| JPH0955362A (en) * | 1995-08-09 | 1997-02-25 | Cypress Semiconductor Corp | Manufacture of integrated circuit for reduction of scratch |
| US7131889B1 (en) * | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
| JP2004172296A (en) * | 2002-11-19 | 2004-06-17 | Matsushita Electric Ind Co Ltd | Polishing method for semiconductor wafer, and polishing pad therefor |
| CN1270356C (en) * | 2003-02-14 | 2006-08-16 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing pad |
| KR20050012588A (en) * | 2003-07-25 | 2005-02-02 | 주식회사 하이닉스반도체 | Polishing pad of chemical mechnical polishing apparatus |
| CN1597254A (en) * | 2003-09-15 | 2005-03-23 | 联华电子股份有限公司 | Grinding pad and method of grinding crystal wafer |
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