CN102922413A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- CN102922413A CN102922413A CN2011102317436A CN201110231743A CN102922413A CN 102922413 A CN102922413 A CN 102922413A CN 2011102317436 A CN2011102317436 A CN 2011102317436A CN 201110231743 A CN201110231743 A CN 201110231743A CN 102922413 A CN102922413 A CN 102922413A
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Abstract
The invention provides a chemical mechanical polishing method; the chemical mechanical polishing method comprises the step of respectively executing polishing in different stages on two polishing pads, wherein through using surface structures of the two polishing pads or changing polishing paths in the different stages, a first polishing effect of the polishing in the first stage on wafer surface is complementary to a second polishing effect of the polishing in the second stage on the wafer surface; therefore, a polishing weakening area is formed in the second polishing stage if a polishing reinforcing area is formed in the first polishing stage, and a polishing reinforcing area is formed in the second stage if a polishing weakening area is formed in the first stage. Therefore, polishing amounts are uniformly distributed and excessive polishing or insufficient polishing phenomenon is avoided.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of chemical and mechanical grinding method.
Background technology
Along with the develop rapidly of super large-scale integration (Ultra Large Scale Intergration, ULSI), integrated circuit fabrication process becomes and becomes increasingly complex with meticulous.In order to improve integrated level, reduce manufacturing cost, the characteristic size of device (Feature Size) constantly diminishes, the number of elements of chip unit are constantly increases, the difficult requirement of satisfying the distribution of element high density of plane routing, can only adopt polylaminate wiring technique, utilize the vertical space of chip, further improve the integration density of device.
But the application of polylaminate wiring technique can cause silicon chip surface uneven, and is extremely unfavorable to graphic making.For this reason, need to carry out planarization (Planarization) to uneven wafer surface processes.At present, chemical mechanical milling method (Chemical Mechanical Polishing, CMP) be the best approach of reaching overall planarization, especially after semiconductor fabrication process entered sub-micron (sub micron) field, cmp had become an indispensable Manufacturing Techniques.
Chemical mechanical milling method (CMP) is a kind of flattening method of the material layer on semiconductor structure surface being removed by the mode that chemical reaction and mechanical lapping combine.See also Fig. 1, Fig. 1 is a kind of existing chemical mechanical polishing device.This device comprises: shell 101, surface post the turntable (platen) 102 of grinding pad (polish pad), grinding head 103a, 103b and for delivery of the lapping liquid supply pipe 104 of lapping liquid (slurry) 105.
During grinding, first with wafer adsorption to be ground on grinding head 103, by exerting pressure at grinding head 103, wafer is pressed onto on the grinding pad; Then, the turntable 102 that grinding pad is posted on the surface rotates under the drive of motor, and grinding head 103 also carries out rotating in same direction, realizes mechanical lapping; Simultaneously, lapping liquid 105 is transported on the grinding pad by lapping liquid supply pipe 104, and utilize the centrifugal force of turntable rotation to be evenly distributed on the grinding pad, between wafer to be ground and grinding pad, form one deck fluid film, chemical reaction occurs in the surface of this film and wafer to be ground, generate the product of easily removing, this product is removed under mechanical abrasive action again.
Grinding technics generally needs minute several stages to carry out such as corase grind, fine grinding etc.When the grinding of finishing one-phase enters the grinding of next stage, tend to use a new grinding pad to make things convenient for the steps such as replacing of lapping liquid.In order to simplify technique, the grinding pad that factory's end uses in whole grinding technics often has the surface configuration of same specification, simultaneously for the reason in the machinery control, grinding head can grind with identical motion mode and motion road strength on two grinding pads, this mode can be served negative effect to the grinding effect band, because wafer is in process of lapping, inevasible meeting occurs grinding in some zone of crystal column surface to be strengthened distinguishing, weakened region then appears grinding in some zone, if the grinding pad surface configuration that twice grinding in front and back used is identical, and wafer is also identical words in path that grinding pad is passed by, then above-mentioned crystal column surface grinds the zone that is reinforced and again is reinforced, easily produce overground phenomenon, and the zone that above-mentioned crystal column surface grinding is weakened still has no idea effectively to be ground to, and makes these local grindings insufficient.These problems are unacceptable to grinding technics.
Summary of the invention
In view of this, the present invention proposes a kind of chemical and mechanical grinding method, can realize grinding the grinding effect that produces in different grinding pads execution can be complementary, the district is strengthened in the grinding that namely causes in the first grinding stage, then form the grinding weakened region in the second grinding stage, the grinding weakened region that causes in the phase I then forms grinding in second stage and strengthens the district.Realize being evenly distributed of amount of grinding with this, avoid overground or grind not enough phenomenon occurring.
A kind of chemical and mechanical grinding method according to above-mentioned purpose proposes comprises step:
1) provides the milling apparatus with the first grinding pad and second grinding pad, wafer material to be ground is loaded on the grinding head;
2) grinding head carries wafer and moves on the first grinding pad, and exerts pressure downwards, so that downward contact the first grinding pad surface of wafer;
3) between the first grinding pad and wafer, inject lapping liquid, rotate described the first grinding pad and described grinding head;
4) grinding head carries wafer when rotating, and the periodicity of carrying out back and forth along the first abrasion path on the grinding pad surface moves, to finish the grinding of phase I;
5) grinding head carries wafer and moves on the second grinding pad, and exerts pressure downwards, so that downward contact the second grinding pad surface of wafer;
6) between the second grinding pad and wafer, inject lapping liquid, rotate described the second grinding pad and described grinding head;
7) grinding head carries wafer when rotating, and the periodicity of carrying out back and forth along the second abrasion path on the grinding pad surface moves, to finish the grinding of second stage.
Optionally, the surface of described the first grinding pad or the second grinding pad has many grooves and protruding island, and described groove and protruding island are spaced with concentric structure.
Optionally, described the first grinding pad has different surface textures with the second grinding pad, is the zone of groove on the surface of described the first grinding pad, then is protruding island on described the second grinding pad; Being the zone on protruding island on the surface of described the first grinding pad, then is groove on described the second grinding pad.
Optionally, the surface of described the first grinding pad or the second grinding pad has many grooves and protruding island, and described groove is the strip groove with the outside diversity in the center of circle, perhaps gathers at the circular hole groove on grinding pad surface.
Optionally, described the first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swings.
Optionally, when described wafer arrived the grinding pad outermost along the first abrasion path, its center of circle was positioned on the protruding island; When described wafer arrived the grinding pad outermost along the second abrasion path, its center of circle was positioned on the groove.
Optionally, when described wafer arrived the grinding pad outermost along the first abrasion path, its center of circle was positioned on the groove; When described wafer arrived the grinding pad outermost along the second abrasion path, its center of circle was positioned on the protruding island.
Optionally, described the first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swing, circle swing, arc swing, sigmoid curve swing, rectangle swings or in swinging one of triangle.
Optionally; one or more and described the second abrasion path in the starting point of described the first abrasion path, movement locus or the direction of motion different are so that wafer has complementary effect at the first grinding effect on the first grinding pad and the second grinding effect on the second grinding pad.
Above-mentioned chemical and mechanical grinding method, by changing the second abrasion path, different from the first abrasion path, perhaps by changing the surface texture on the second grinding pad, different from the first grinding pad, realize that the phase I grinding causes the grinding of the first grinding effect and second stage crystal column surface to be caused the effect of the second grinding effect complementation to crystal column surface, thereby realize being evenly distributed of amount of grinding, avoid overground or grind not enough phenomenon occurring.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is a kind of existing chemical mechanical polishing device.
Fig. 2 is the flow chart of steps of chemical and mechanical grinding method of the present invention.。
Fig. 3 A-3B is a kind of grinding pad of existing concentric structure.
Fig. 4 is when being positioned on the protruding island in the center of circle, the curve map of corresponding amount of grinding on each position of wafer.
Fig. 5 is when being positioned on the groove in the center of circle, the curve map of corresponding amount of grinding on each position of wafer.
Fig. 6 is the circle centre position linear velocity curve map over time of wafer.
After Fig. 7 is twice grinding, the stack schematic diagram of grinding effect.
Fig. 8 is the grinding pad comparison diagram of two kinds of different surfaces structures among the embodiment two
The specific embodiment
Just as described in the background section, existing grinding technics, because the grinding pad that uses in different phase has identical surface texture, and when grinding, grinding head carries the wafer identical path of passing by on the grinding pad surface, is repeatedly strengthened so that crystal column surface grinds the zone of strengthening, and easily produces overground phenomenon, crystal column surface grinds the zone of weakening and then has no idea all the time effectively to grind, and makes these local grindings insufficient.
For this situation, the present invention proposes a kind of chemical and mechanical grinding method, this chemical and mechanical grinding method is by two kinds of improved procedures, the first is the abrasion path on two grinding pads before and after improving, one or more such as in the starting point, movement locus or the direction of motion that change the first abrasion path and the second abrasion path; The second is the surface texture that changes two grinding pads, such as the position that changes the first grinding pad and the second grinding pad surface grooves and protruding island, perhaps changes the shape of groove and distribution etc.So that in process of lapping, the amount of grinding that two in front and back grinding pads of wafer produce can be by effectively complementary, namely be polished the zone of reinforcement at first grinding pad, on second grinding pad, then grind and weaken, and be polished the zone of weakening at first grinding pad, then be polished reinforcement at second grinding pad.Thus, the amount of grinding of whole crystal column surface is more even, also can not produce overground and the inadequate problem of grinding.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.
See also Fig. 2, Fig. 2 is the flow chart of steps of chemical and mechanical grinding method of the present invention.As shown in the figure, this chemical and mechanical grinding method comprises step:
S10: the milling apparatus with the first grinding pad and second grinding pad is provided, wafer material to be ground is loaded on the grinding head.
S11: grinding head carries wafer and moves on the first grinding pad, and exerts pressure downwards, so that wafer contacts the first grinding pad surface downwards.
S12: between the first grinding pad and wafer, pass into the first lapping liquid, rotate described the first grinding pad and described grinding head.
S13: grinding head carries wafer when rotating, and carries out periodic translation back and forth along the first path on the grinding pad surface, to finish the grinding of phase I.
S14: grinding head carries wafer and moves on the second grinding pad, and exerts pressure downwards, so that wafer contacts the second grinding pad surface downwards.
S15: between the second grinding pad and wafer, pass into the second lapping liquid, rotate described the second grinding pad and described grinding head.
S16: grinding head carries wafer when rotating, and carries out periodic translation back and forth along the second path on the grinding pad surface, to finish the grinding of second stage.
The described phase I grinds crystal column surface is caused the first grinding effect, described the first grinding effect is that the district is strengthened for grinding in some zone of wafer, namely the amount of grinding that obtains of this zone is larger, and some zone is for grinding weakened region, and namely the amount of grinding that obtains of this zone is smaller.The grinding of described second stage causes the second grinding effect to crystal column surface, described the second grinding effect and the first grinding effect are complementary, the district is strengthened in the grinding that namely causes in the first grinding stage, then form the grinding weakened region in the second grinding stage, the grinding weakened region that causes in the phase I then forms grinding in second stage and strengthens the district.
Described the first grinding pad and the second grinding pad can have the surface texture of same size, also can have the surface texture of different size.
When the surface texture of the first grinding pad and the second grinding pad is identical; described the first path and described the second path have one or more in different starting points, movement locus or the direction of motion, and this difference has caused the effect of the second grinding effect and the first grinding effect complementation.
When the surface texture of the first grinding pad and the second grinding pad not simultaneously; described the first path and described the second path can have one or more in different starting points, movement locus or the direction of motion, also can have identical starting point, movement locus and the direction of motion.No matter whether the first path is identical with the second tunnel strength, and the purpose of its selection all is so that the second grinding effect that produces and the first grinding effect have complementary effect.
Below, be described further with the chemical and mechanical grinding method of several concrete embodiments to the invention described above.
Embodiment one:
Embodiment one adopts identical grinding pad, and different abrasion path describes chemical and mechanical grinding method of the present invention, and the grinding pad that adopts is the grinding pad with concentric structure.
Please refer to Fig. 3 A-3B, Fig. 3 A-3B is a kind of grinding pad of existing concentric structure.As shown in the figure, on grinding pad 110 surfaces, be provided with groove 111 and the protruding island 112 of many concentric structures, described groove 111 is arranged on the grinding pad 110 with 112 intervals, protruding island.By these grooves 111, can improve the distribution of lapping liquid on grinding pad 110, fresh lapping liquid flowing in milling zone, with the lapping liquid of crossing from flow out mobile of milling zone with flow through milling zone and the proportion of the lapping liquid that substantially is not used etc.
Particularly, to grind 8 cun wafers (diameter 200mm) as example, the diameter of grinding pad is greater than 500mm usually, and at this moment, the width that can choose groove 111 is 10mm, and the width on protruding island 112 is 20mm.
Consider first the simplest motion mode, suppose that grinding head 120 does not have the motion of translation at grinding pad 110, the motion of then considering this moment is exactly the rotation of grinding head 120 and the rotation of grinding pad 110.Carry wafer 130 when grinding pad grind when grinding head 120 this moment, and the center of circle of wafer has two kinds of situations:
The first situation is that the center of circle is positioned on the protruding island 112 of grinding pad, yet this moment, the wafer circle centre position was in the mechanical lapping state with the grinding pad Mechanical Contact all the time, and the amount of grinding of circle centre position is maximum, is considered as 100% grinding.Press the radial direction of grinding pad outward, from the width place on half protruding island, the center of circle (suppose the center of circle just in time drop on the centre position on protruding island 112), come a groove 111 corresponding positions, being can abrasive action not arranged to wafer above groove 111, is minimum in this regional grinding wafer amount therefore.But it should be noted, amount of grinding is not to be zero herein, because wafer self has rotation under the drive of grinding head, the simultaneous grinding pad is also rotating, so wafer is to be on the protruding island for a moment, to be on the groove for a moment and alternately to change apart from the place of half protruding island, center of circle width.When investigating on the wafer apart from certain any the amount of grinding on the annulus of half protruding island, center of circle width to a groove width, its computational methods should for: wafer rotates a week relative to grinding pad, be on the protruding island time/be in the time * 100% on the groove.The like, can calculate whole wafer in the radial direction amount of grinding curve, with reference to figure 4, Fig. 4 is when being positioned on the protruding island in the center of circle, the curve map of corresponding amount of grinding on each position of wafer.As shown in the figure, wherein abscissa is diameter wafer, and ordinate is amount of grinding.Maximum at the amount of grinding that wafer home position (being 0 position of abscissa) is located, and the corresponding position of the first amount of grinding minimum that both sides, the center of circle occur just in time is the position that groove occurs on the grinding pad, then by protruding island-groove-protruding island ... order amount of grinding maximum and minimum appear successively, and maximum and minimum are vibrated successively and are progressively dwindled
The second situation is that the center of circle of wafer is positioned on the groove 111, and this moment is just in time opposite with upper a kind of situation, and the center of circle of wafer is not ground to all the time, and its amount of grinding is designated as 0%.Please refer to Fig. 5, Fig. 5 is the center of circle of wafer when being positioned on the groove, corresponding amount of grinding curve map on each position of wafer.As shown in the figure, wherein abscissa is diameter wafer, and ordinate is amount of grinding.Minimum at the amount of grinding that wafer home position (being 0 position of abscissa) is located, and the corresponding position of the first amount of grinding maximum that both sides, the center of circle occur just in time is the position that grinding pad epirelief island occurs, then press groove-protruding island-groove ... order amount of grinding minimum and maximum appear successively, and minimum and maximum are vibrated successively and are progressively dwindled.
And when grinding head 120 carries wafer 130 and also does back and forth straight line and swing along the radial direction of grinding pad on grinding pad, grinding pad the positional factor, also needs to consider the at a time linear velocity of circle centre position except considering the center of circle to the amount of grinding of wafer on grinding pad.If the linear velocity in the center of circle is larger, the amount of grinding that then produces in the unit interval is larger, otherwise then amount of grinding is less.
As shown in Figure 6, Fig. 6 is the circle centre position linear velocity curve map over time of wafer.As shown in the figure, wherein abscissa is the time of wafer movement, and ordinate is the existing speed of wafer circle centre position.Supposing to carry wafer by grinding head, to do the cycle that moves back and forth be 6 seconds, and the maximum displacement of motion is 50mm.Within 60 seconds time, grinding head is carrying wafer and is doing altogether 10 times and swing back and forth.When its linear velocity maximum appeared at wafer and moves to the outermost of grinding pad, the minimum of a value of linear velocity then appeared at wafer and moves to the place nearest apart from the grinding pad center of circle.
If the starting point in the center of circle is the center of circle side near grinding pad, and the grinding direction is along grinding pad radially outward.Then according to the relation of amount of grinding and center of circle linear velocity, the center of circle is more mobile, and its linear velocity is larger, and amount of grinding is just larger.Therefore judge the size of overall amount of grinding behind the one-period, when mainly relying on the center of circle and being positioned at outermost, the destination county when namely swinging half period, the surface of grinding pad is protruding island or groove.If terminal point is protruding island, then only the situation when grinding on protruding island is similar to the center of circle for the integral grinding amount, and namely the amount of grinding of circle centre position is maximum, and amount of grinding maximum and minimum are vibrated successively and progressively dwindled.If terminal point is groove, then the integral grinding amount is only similar in the situation when groove grinds to the center of circle, and namely the amount of grinding of circle centre position is minimum, and the minimum of amount of grinding and maximum are vibrated successively and progressively dwindled.
If the starting point in the center of circle is the outside, the center of circle away from grinding pad, and the grinding direction is along grinding pad radially inward.Then according to the relation of amount of grinding and center of circle linear velocity, the center of circle is more mobile, and its linear velocity is less, and amount of grinding is just less.Therefore judge the size of overall amount of grinding behind the one-period, when mainly relying on the center of circle and being positioned at outermost, namely straight line swings the starting point place, and the surface of grinding pad is protruding island or groove.If starting point is protruding island, then only the situation when grinding on protruding island is similar to the center of circle for the integral grinding amount, and namely the amount of grinding of circle centre position is maximum, and amount of grinding maximum and minimum are vibrated successively and progressively dwindled.If starting point is groove, then the integral grinding amount is only similar in the situation when groove grinds to the center of circle, and namely the amount of grinding of circle centre position is minimum, and the minimum of amount of grinding and maximum are vibrated successively and progressively dwindled.
According to above-mentioned analysis, when the grinding pad in the present embodiment applies to chemical mechanical method of the present invention, if the first abrasion path on the first grinding pad so that on the wafer distribution of the first grinding effect to present the circle centre position amount of grinding maximum, amount of grinding maximum and minimum are vibrated successively and are progressively dwindled, be that wafer circle centre position and amount of grinding maximum place grind to strengthen the district, the amount of grinding minimum place of wafer is when grinding weakened region, then the second abrasion path on the second grinding pad is selected so that the second grinding effect on the wafer has with the mode of the first grinding effect complementation carries out, be that the circle centre position amount of grinding is minimum, grinding minimum and maximum shakes successively and progressively dwindles, as shown in Figure 7, after Fig. 7 is twice grinding, the stack schematic diagram of grinding effect.Wherein solid line represents that the amount of grinding distribution map that produces under the first abrasion path, dotted line represent the amount of grinding distribution map that produces under the second abrasion path, and middle solid line represents the amount of grinding distribution map of twice grinding after synthetic.
The mode of concrete selection the second abrasion path can not determine on an equal basis according to the position of terminal point after the different or half period of starting point and grinding direction.
Further, grinding head carries the straight line that the abrasion path of wafer on grinding pad be not limited only to back and forth and swings, and the movement locus under its one-period also can be that circle swing, arc swing, sigmoid curve swing, rectangle swings, triangle swings etc.At this moment, consider the situation of change of the circle centre position linear velocity of wafer, also need add the equation of locus of abrasion path as its considerations, concrete computational methods will not done expansion, those skilled in the art can calculate according to the vector synthetic method of mathematics the concrete condition of linear velocity, then according to the overall determination methods of amount of grinding, on the grinding track of the first abrasion path and the second abrasion path, make concrete selection according to purport of the present invention.
Embodiment two:
Embodiment two adopts two different grinding pads, a kind of chemical and mechanical grinding method that identical or different abrasion path is made.These embodiment two essence are a kind of distortion of embodiment one.Namely the distribution on the first grinding pad 210 and the second grinding pad 210 ' groove and protruding island is just in time opposite, positions of groove at the first grinding pad 210, being protruding island just on the second grinding pad 210 ', is the positions on protruding island at the first grinding pad 210, just in time is groove on the second grinding pad 210 '.As shown in Figure 8, Fig. 8 is the grinding pad comparison diagram of two kinds of different surfaces structures among the embodiment two.In this case, even do not change the track of the first abrasion path and the second abrasion path, the grinding effect that produces also can play complementary effect.
Further, if the variation on groove and protruding island not only has locational different, also have on the width not simultaneously, can calculate concrete abrasion path, adopt different starting point or terminal point, the concrete track that perhaps grinds is different, so that the second grinding effect and the first grinding effect form complementary effect.
It is worth mentioning that, except the grinding pad of above-mentioned concentric structure, the grinding pad of other specifications, strip groove with the outside diversity in the center of circle such as the shape of groove, perhaps gather at the circular hole groove on grinding pad surface, also can obtain the selection of concrete abrasion path according to purport of the present invention, so that the first grinding effect and the second grinding effect have complementary effect.
In addition, only enumerated the situation of two grinding pads among the present invention, in actual applications, also might use the situation that surpasses two grinding pads, at this moment, chemical and mechanical grinding method of the present invention then develops into the grinding effect that each piece grinding pad produces, and is complementary with the grinding effect that other all grinding pads produce.
In sum, chemical and mechanical grinding method of the present invention, when the first grinding pad and the second grinding pad grind, because the difference of abrasion path or grinding pad surface texture, so that the grinding effect that twice grinding in front and back produces is complementary, namely when the first grinding pad grinds, the zone that amount of grinding is strengthened on the wafer, on the second grinding pad, just be in the grinding weakened region, and when the first grinding pad grinds, the place that amount of grinding weakens on the wafer just is on the first grinding pad and grinds the zone of strengthening.With this amount of grinding equalization with twice grinding in front and back, so that crystal column surface namely can be because overgrinding cause device failure, can be because not grinding insufficient inhomogeneous phenomenon in surface that occurs yet.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, in other embodiments realization.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. chemical and mechanical grinding method, it is characterized in that: described chemical and mechanical grinding method comprises step:
1) provides the milling apparatus with the first grinding pad and second grinding pad, wafer material to be ground is loaded on the grinding head;
2) grinding head carries wafer and moves on the first grinding pad, and exerts pressure downwards, so that downward contact the first grinding pad surface of wafer;
3) between the first grinding pad and wafer, inject lapping liquid, rotate described the first grinding pad and described grinding head;
4) grinding head carries wafer when rotating, and the periodicity of carrying out back and forth along the first abrasion path on the grinding pad surface moves, to finish the grinding of phase I;
5) grinding head carries wafer and moves on the second grinding pad, and exerts pressure downwards, so that downward contact the second grinding pad surface of wafer;
6) between the second grinding pad and wafer, inject lapping liquid, rotate described the second grinding pad and described grinding head;
7) grinding head carries wafer when rotating, and the periodicity of carrying out back and forth along the second abrasion path on the grinding pad surface moves, to finish the grinding of second stage.
2. a kind of chemical and mechanical grinding method as claimed in claim 1, it is characterized in that: the surface of described the first grinding pad or the second grinding pad has many grooves and protruding island, and described groove and protruding island are spaced with concentric structure.
3. a kind of chemical and mechanical grinding method as claimed in claim 2, it is characterized in that: described the first grinding pad has different surface textures with the second grinding pad, being the zone of groove on the surface of described the first grinding pad, then is protruding island on described the second grinding pad; Being the zone on protruding island on the surface of described the first grinding pad, then is groove on described the second grinding pad.
4. a kind of chemical and mechanical grinding method as claimed in claim 1, it is characterized in that: the surface of described the first grinding pad or the second grinding pad has many grooves and protruding island, described groove is the strip groove with the outside diversity in the center of circle, perhaps gathers at the circular hole groove on grinding pad surface.
5. a kind of chemical and mechanical grinding method as claimed in claim 1 is characterized in that: described the first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swings.
6. a kind of chemical and mechanical grinding method as claimed in claim 5 is characterized in that: when described wafer arrived the grinding pad outermost along the first abrasion path, its center of circle was positioned on the protruding island; When described wafer arrived the grinding pad outermost along the second abrasion path, its center of circle was positioned on the groove.
7. a kind of chemical and mechanical grinding method as claimed in claim 5 is characterized in that: when described wafer arrived the grinding pad outermost along the first abrasion path, its center of circle was positioned on the groove; When described wafer arrived the grinding pad outermost along the second abrasion path, its center of circle was positioned on the protruding island.
8. a kind of chemical and mechanical grinding method as claimed in claim 1 is characterized in that: described the first abrasion path or the movement locus of the second abrasion path under one-period are that straight line swing, circle swing, arc swing, sigmoid curve swing, rectangle swings or in swinging one of triangle.
9. a kind of chemical and mechanical grinding method as claimed in claim 1; it is characterized in that: one or more and described the second abrasion path in the starting point of described the first abrasion path, movement locus or the direction of motion different, so that wafer has complementary effect at the first grinding effect on the first grinding pad and the second grinding effect on the second grinding pad.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104162830A (en) * | 2013-05-16 | 2014-11-26 | 青岛嘉星晶电科技股份有限公司 | Wafer grinding method |
| CN109648461A (en) * | 2019-01-14 | 2019-04-19 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Grinding head scan method and device |
| CN111421462A (en) * | 2019-01-08 | 2020-07-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5435772A (en) * | 1993-04-30 | 1995-07-25 | Motorola, Inc. | Method of polishing a semiconductor substrate |
| JPH0955362A (en) * | 1995-08-09 | 1997-02-25 | Cypress Semiconductor Corp | Manufacture of integrated circuit for reduction of scratch |
| CN1503332A (en) * | 2002-11-19 | 2004-06-09 | ���µ�����ҵ��ʽ���� | Method for polishing semiconductor wafer and polishing pad for the same |
| CN1521813A (en) * | 2003-02-14 | 2004-08-18 | 中芯国际集成电路制造（上海）有限公 | Chemical mechanical polishing pad |
| US20050020191A1 (en) * | 2002-03-04 | 2005-01-27 | Taylor Theodore M. | Apparatus for planarizing microelectronic workpieces |
| KR20050012588A (en) * | 2003-07-25 | 2005-02-02 | 주식회사 하이닉스반도체 | Polishing pad of chemical mechnical polishing apparatus |
| CN1597254A (en) * | 2003-09-15 | 2005-03-23 | 联华电子股份有限公司 | Grinding pad and method of grinding crystal wafer |
-
2011
- 2011-08-12 CN CN201110231743.6A patent/CN102922413B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5435772A (en) * | 1993-04-30 | 1995-07-25 | Motorola, Inc. | Method of polishing a semiconductor substrate |
| JPH0955362A (en) * | 1995-08-09 | 1997-02-25 | Cypress Semiconductor Corp | Manufacture of integrated circuit for reduction of scratch |
| US20050020191A1 (en) * | 2002-03-04 | 2005-01-27 | Taylor Theodore M. | Apparatus for planarizing microelectronic workpieces |
| CN1503332A (en) * | 2002-11-19 | 2004-06-09 | ���µ�����ҵ��ʽ���� | Method for polishing semiconductor wafer and polishing pad for the same |
| CN1521813A (en) * | 2003-02-14 | 2004-08-18 | 中芯国际集成电路制造（上海）有限公 | Chemical mechanical polishing pad |
| KR20050012588A (en) * | 2003-07-25 | 2005-02-02 | 주식회사 하이닉스반도체 | Polishing pad of chemical mechnical polishing apparatus |
| CN1597254A (en) * | 2003-09-15 | 2005-03-23 | 联华电子股份有限公司 | Grinding pad and method of grinding crystal wafer |
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| CN104162830A (en) * | 2013-05-16 | 2014-11-26 | 青岛嘉星晶电科技股份有限公司 | Wafer grinding method |
| CN111421462A (en) * | 2019-01-08 | 2020-07-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN111421462B (en) * | 2019-01-08 | 2022-03-22 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN109648461A (en) * | 2019-01-14 | 2019-04-19 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Grinding head scan method and device |
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