CN102922173A - 助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置 - Google Patents

助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置 Download PDF

Info

Publication number
CN102922173A
CN102922173A CN201210214359XA CN201210214359A CN102922173A CN 102922173 A CN102922173 A CN 102922173A CN 201210214359X A CN201210214359X A CN 201210214359XA CN 201210214359 A CN201210214359 A CN 201210214359A CN 102922173 A CN102922173 A CN 102922173A
Authority
CN
China
Prior art keywords
group
scaling powder
powder constituent
electric connection
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210214359XA
Other languages
English (en)
Inventor
高桥诚一郎
山口虎彦
后藤宏文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of CN102922173A publication Critical patent/CN102922173A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613—Polymers, e.g. resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C08K5/053—Polyhydroxylic alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/81024—Applying flux to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/8191—Cleaning, e.g. oxide removal step, desmearing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/8191—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/81911—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Abstract

本发明提供一种助焊剂组成物，电性连接结构的形成方法，电性连接结构以及半导体装置。助焊剂组成物的特征在于：含有糖醇(A)、以及具有下述式(1)所示的重复结构单元的聚合物(B)。
Figure DDA00001805077800011
式中，R1表示氢原子或者甲基；Z表示羟基、侧氧基、羧基、甲酰基、氨基、硝基、巯基、磺基、恶唑啉基、酰亚胺基、具有酰胺结构的基团或者具有这些基团的基团。若使用本发明的助焊剂组成物，通过回流焊来进行设置有柱凸块等凸块的基板的电性连接，则凸块在回流焊时不会从助焊剂中露出，能够获得良好的连接结构。

Description

助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置
技术领域
本发明涉及一种助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置。 
背景技术
以前，电子零件等对于零件搭载基板的电性连接时使用助焊剂组成物。焊料等熔融性导电构件在热熔融(回流焊(reflow))时被加热至200℃～300℃，因此若不使用助焊剂组成物，则焊料或铜箔等电子零件的导电构件容易氧化而形成氧化膜，无法良好地进行电性连接。通过利用助焊剂组成物来覆盖焊料或铜箔等电子零件的导电构件，不仅阻隔氧来防止焊料或铜箔等电子零件的导电构件的氧化，并且将已产生的氧化物还原，另外，使熔融的焊料良好地浸湿，可良好地进行电子零件等的电性连接。 
作为助焊剂组成物，例如专利文献1中公开有包含KAlF4等具有去除Mg成分的作用的成分、聚乙烯醇等水溶性有机树脂、增粘剂、及水的助焊剂组成物。专利文献2中公开有含有乙酰化环氧乙烷-环氧丙烷(ethylene oxide-propylene oxide，EO-PO)嵌段聚合物及聚甘油的助焊剂组成物。 
现有技术文献 
专利文献 
专利文献1日本专利特开2009-220174号公报 
专利文献2日本专利特开2004-158728号公报 
但是，在将具有柱状熔融性导电构件(柱凸块)的电子零件等进行电性连接的情况下，由于其形状而有以下顾虑：在回流焊中导电构件露出，另外，助焊剂组成物变得不均匀，无法良好地形成电性连接结构。 
尤其在如日本专利特开2006-332694号公报所记载的包含2种不同的金属种类的柱凸块的情况下，根据金属种类而浸湿性不同，因此有以下顾虑： 在回流焊中导电构件露出，另外，助焊剂组成物容易变得不均匀，无法良好地形成电性连接结构。 
发明内容
本发明的目的在于提供一种助焊剂组成物，该助焊剂组成物在通过回流焊来进行设置有柱凸块等凸块的基板的电性连接的情况下，凸块不会在回流焊时从助焊剂中露出，能够获得良好的电性连接结构。 
达成上述目的的本发明如下所述。 
[1]一种助焊剂组成物，其特征在于：含有糖醇(alditol)(A)、以及具有下述式(1)所示的重复结构单元的聚合物(B)： 
[化1] 
Figure BDA00001805077600021
式中，R1表示氢原子或者甲基；Z表示羟基、侧氧基(oxo)、羧基、甲酰基、氨基、硝基、巯基、磺基、恶唑啉基、酰亚胺基、具有酰胺结构的基团或者具有这些基团的基团。 
[2]根据上述[1]所述的助焊剂组成物，其特征在于：上述式(1)中的Z为具有酰胺结构的基团。 
[3]根据上述[1]或[2]所述的助焊剂组成物，其特征在于：相对于上述糖醇(A)100质量份，上述聚合物(B)的含量为10质量份～200质量份。 
[4]根据上述[1]所述的助焊剂组成物，其特征在于：上述糖醇(A)及上述聚合物(B)为水溶性。 
[5]一种电性连接结构的形成方法，其特征在于：使用根据上述[1]或[2]所述的助焊剂组成物，对熔融性导电部进行回流焊。 
[6]一种电性连接结构，其特征在于：利用根据上述[5]所述的电性连接结构的形成方法而形成。 
[7]一种半导体装置，其特征在于：具有根据上述[6]所述的电性连接结构。 
发明的效果 
若使用本发明的助焊剂组成物，通过回流焊来进行设置有柱凸块等凸块的基板的电性连接，则凸块在回流焊时不会从助焊剂中露出，能够获得良好的连接结构。 
附图说明
图1是表示实例1中进行的回流焊的温度条件的图。 
图2是表示对设置有柱凸块的硅晶圆进行回流焊，以纯水清洗助焊剂后的柱凸块的焊料部的形状的图。 
图3(a)、(b)及(c)是示意性表示本发明的电性连接结构的形成方法的一例的图。 
符号的说明： 
11：熔融性导电部 
12：基板 
13：助焊剂组成物 
21：基板 
22：导电部 
31：导电连接部 
41：柱凸块 
42：柱部 
43：焊料部 
具体实施方式
1.助焊剂组成物
所谓助焊剂组成物，是指与在以下情况下使用的焊料或低熔点金属等焊接材料一起使用的熔剂：在大气压下且氧存在下形成电性连接结构的情况，尤其是在将金属构件彼此接合的情况。助焊剂组成物是为了如下目的来使用：通过去除接合面的氧化物等异物，并且降低接合构件的界面张力，来提高焊接材料的延展性，防止接合面的金属的氧化。 
本发明的助焊剂组成物的特征在于：含有糖醇(A)、以及具有下述式(1)所示的重复结构单元的聚合物(B)。 
[化1] 
式中，R1表示氢原子或者甲基；Z表示羟基、侧氧基、羧基、甲酰基、氨基、硝基、巯基、磺基、恶唑啉基、酰亚胺基、具有酰胺结构的基团或者具有这些基团的基团。 
1-1.糖醇(A)
糖醇(A)为本发明的助焊剂组成物中的活性种，具有还原作用，防止在抹上焊料时焊料或接合构件被氧化。 
糖醇(A)只要是具有防止焊料等氧化的作用者，则并无特别限制，例如可列举：甘油(glycerin)、赤藓糖醇(erythritol)、苏糖醇(threitol)、核糖醇(ribitol)、阿拉伯糖醇(arabinitol)、木糖醇(xylitol)、蒜糖醇(allitol)、山梨糖醇(sorbitol)、甘露糖醇(mannitol)、艾杜糖醇(iditol)、半乳糖醇(galactitol)以及塔罗糖醇(talitol)等糖醇。 
这些糖醇中，就还原力强，能够有效率地防止焊料等氧化的方面而言，特别优选为甘油。 
优选为糖醇(A)与后述聚合物(B)均为水溶性。若糖醇(A)与聚合物(B)均为水溶性，则能够使本发明的助焊剂组成物成为水溶性，因此能够从使用本发明的助焊剂组成物而抹上焊料的基板上，通过水清洗而不是有机溶剂清洗来去除助焊剂残渣，其结果为，组成物的操作性变得容易，而且环境适合性提高。此处，所谓水溶性，是指对25℃、1bar下的水的溶解度为0.1S以上。上述作为糖醇(A)而例示的甘油等化合物全部为水溶性。 
1-2.聚合物(B)
聚合物(B)是具有上述式(1)所示的重复结构单元的聚合物。 
本发明的助焊剂组成物中，将作为活性种的糖醇(A)与聚合物(B)组合使用，由此通过回流焊来进行设置有凸块的基板的电性连接时，表现出防 止凸块在回流焊时从助焊剂中露出的效果。一般认为获得上述效果是由于：通过使糖醇(A)与聚合物(B)组合，来抑制在回流焊时等高温下助焊剂组成物的粘度下降。 
上述式(1)中，R1表示氢原子或者甲基。Z所表示的官能基是具有偶极矩，可进行氢键合的基团。Z所表示的官能基的具体例可列举：羟基、侧氧基、羧基、甲酰基、氨基、硝基、巯基、磺基、恶唑啉基、酰亚胺基、具有酰胺结构的基团以及具有这些基团的基团等。聚合物(B)所具有的多个Z所表示的官能基可以是1种，也可以是2种以上。 
聚合物(B)的具体例可列举：聚乙烯吡咯烷酮、聚乙烯醇(包括部分皂化物)、聚丙烯酸、聚甲基丙烯酸、聚(丙烯酸2-羟基乙酯)、聚(甲基丙烯酸2-羟基乙酯)、聚(丙烯酸4-羟基丁酯)、聚(甲基丙烯酸4-羟基丁酯)、聚(丙烯酸糖氧基乙酯)、聚(甲基丙烯酸糖氧基乙酯)、聚乙烯基甲醚、聚乙烯缩醛(包括部分缩醛化物)、聚乙烯亚胺、苯乙烯-顺丁烯二酸酐共聚物、聚乙烯胺、聚烯丙胺、以及Epocros(商品名，日本触媒(股)制造)等。 
Z所表示的官能基优选为具有酰胺结构的基团。若Z所表示的官能基为具有酰胺结构的基团，则当使用本助焊剂组成物，通过回流焊来进行设置有凸块的基板的电性连接时，能够更确实地防止凸块在回流焊时从助焊剂中露出。Z所表示的官能基为具有酰胺结构的基团的聚合物(B)可列举聚乙烯吡咯烷酮等。 
聚合物(B)的分子量(Mw)通常为1,000～1,000,000。上述分子量是利用凝胶渗透色谱法来测定的聚苯乙烯换算的重量平均分子量。 
本发明的助焊剂组成物中的聚合物(B)的含量相对于糖醇(A)100质量份，优选为10质量份～200质量份，更优选为20质量份～130质量份，尤其优选为50质量份～120质量份。若聚合物(B)的含量在上述范围内，则当使用本助焊剂组成物，通过回流焊来进行设置有凸块的基板的电性连接时，能够更确实地防止凸块在回流焊时从助焊剂组成物中露出。 
优选为聚合物(B)与上述糖醇(A)均为水溶性。若聚合物(B)与糖醇(A)均为水溶性，则能够使本发明的助焊剂组成物成为水溶性，因此能够从使用本发明的助焊剂组成物而抹上焊料的基板上，通过水清洗而不是有机溶剂清洗来去除助焊剂残渣，其结果为，组成物的操作性变得容易，并且 环境适合性提高。此处，所谓水溶性，是指对于25℃、1bar下的水的溶解度为0.1S以上。上述作为聚合物(B)的具体例而例示的聚乙烯吡咯烷酮等聚合物全部为水溶性。 
1-3.其他成分
本发明的助焊剂组成物能够在不损及本发明效果的范围内含有其他成分。其他成分可列举溶剂、活性剂以及触变性赋予剂等。 
溶剂是为了调整助焊剂组成物的粘度，控制助焊剂组成物的界面张力而使用。溶剂可列举日本专利特开2010-179360号公报中记载的溶剂。具体而言可列举：水、异丙醇、丁醇、乙二醇、二乙二醇、三乙二醇、四乙二醇、聚乙二醇、丙二醇、二丙二醇、三丙二醇、丁二醇、戊二醇、己二醇、二甘油辛酸酯等二甘油的脂肪酸酯、聚氧乙烯聚甘油醚以及聚氧丙烯聚甘油醚等水溶性的溶剂、乙二醇单烷基醚乙酸酯、丙二醇单烷基醚、丙二醇二烷基醚、丙二醇单烷基醚乙酸酯、卡必醇、乳酸酯、脂肪族羧酸酯以及芳香族烃等非水溶性溶剂。 
这些溶剂中，优选为能够容易挥发的溶剂，更详细而言是沸点为回流焊温度以下的溶剂，通常是大气压下的沸点为260℃以下的溶剂。或者在糖醇(A)或聚合物(B)为水溶性的情况下，就与它们的混合性方面而言，优选为水溶性的溶剂。这些溶剂可以仅使用1种，也可以并用2种以上。 
上述活性剂是为了提高助焊剂组成物的还原性的目的而使用，可列举日本专利特开2010-179360号公报中记载的活性剂。 
另外，上述触变性赋予剂是为了对助焊剂组成物赋予触变性的目的而使用，可列举日本专利特开2010-179360号公报中记载的触变性赋予剂。 
2.电性连接结构的形成方法
本发明的电性连接结构的形成方法是通过使用上述本发明的助焊剂组成物，对熔融性导电部进行回流焊而进行电性连接。若使用本发明的助焊剂组成物，则能够在回流焊时确实地防止熔融性导电部的氧化，其结果为，可获得良好的电性连接结构。 
本发明的电性连接结构的形成方法的一具体例例如包括以下步骤： 
步骤1：在设置有可电性连接的熔融性导电部的基板上涂布本发明的助焊剂组成物，以本发明的助焊剂组成物包覆上述熔融性导电部的步骤。 
步骤2：将上述基板、与设置有可电性连接的导电部的另一基板以如下方式进行配置的步骤：夹持上述助焊剂组成物，且设置于一基板上的熔融性导电部与设置于另一基板上的熔融性导电部对向。 
步骤3：通过加热处理对设置于上述2块基板上的熔融性导电部进行回流焊，将上述对向的2个熔融性导电部接合，由此使上述基板与上述另一基板电性连接的步骤。 
2-1.步骤1
将步骤1的示意图示于图3(a)中。步骤1是如下步骤：在设置有可电性连接的熔融性导电部11的基板12上涂布本发明的助焊剂组成物13，以助焊剂组成物13包覆熔融性导电部11。 
熔融性导电部11例如可列举凸块等。熔融性导电部11可以仅由焊料材料形成，另外，也可以是包括以下部分的柱凸块：柱部，与基板12的板部连接且包含Cu、Ni、Au、Ag、Al、Zn等焊料材料以外的材料；及焊料部，形成于上述柱部的前端且包含焊料材料。 
作为上述焊料材料，例如不仅可列举作为铅系合金的Sn-Pb系合金、Sn-Pb-Ag系合金、Sn-Pb-Bi系合金、Sn-Pb-In系合金、Sn-Pb-Sb系合金等，而且可列举作为无铅系合金的Sn-Sb系合金、Sn-Bi系合金、Sn-Ag系合金、Sn-Zn系合金等。这些合金中也可以添加Ag、Cu、Bi、In、Ni、P等。 
基板12可列举具有与熔融性导电部11电性连接的配线(未图示)以及绝缘层(未图示)的基板等。上述绝缘层例如可列举包含有机成分作为主成分的层，具体而言可列举：日本专利3812654号、日本专利特开2007-314695号公报、日本专利特开2008-107458号公报、日本专利特开2006-189788号公报、国际公开第2009/072492号小册子、日本专利特开2001-033965号公报等中记载的树脂层。 
除此以外，上述绝缘层还可以列举半导体晶圆、玻璃基板、树脂基板等基材。即，上述基板可列举：零件搭载基板、芯片搭载基板等各种基板，电子电路模块、倒装芯片集成电路(integrated circuit，IC)、半导体芯片等各种电子零件等。 
作为在基板12上涂布助焊剂组成物13的方法，例如可列举：旋转涂布法、利用刀片涂布机的涂布方法、利用辊涂布机的涂布方法、利用刮刀片的 涂布方法、利用帘幕式涂布机的涂布方法、利用模涂布机的涂布方法、利用线涂布机的涂布方法、利用丝网印刷装置的丝网印刷法、利用喷墨法来涂布的方法。 
涂布助焊剂组成物13后，视需要，为了通过使助焊剂组成物13中所含的溶剂等挥发来提高粘度，从而提高与另一基板21的暂时接合性的目的，或者为了提高助焊剂组成物13的还原性的目的，也可以进行加热处理。 
2-2.步骤2
将步骤2的示意图示于图3(b)中。步骤2是如下步骤：将基板12、与设置有可电性连接的导电部22的另一基板21以如下方式进行配置：夹持助焊剂组成物13，且设置于基板12上的熔融性导电部11与设置于基板21上的导电部22对向。如图3(b)所示，基板12与基板21是以对向的多个熔融性导电部11与导电部22接触的方式配置。 
基板21可列举具有与可电性连接的导电部22电性连接的配线(未图示)与绝缘层(未图示)的基板等。导电部22与熔融性导电部11同样，也可以是熔融性。基板21的绝缘层与基板12的绝缘层同样，可列举包含有机成分作为主成分的层、半导体晶圆、玻璃基板、树脂基板等。 
也可以将基板12与基板21以上述方式配置后，控制助焊剂组成物13的粘度，由此以基板12与基板21不会错开移动的方式，即，以步骤3的回流焊时基板12与基板21的相互位置不变的方式，将助焊剂组成物13作为暂时接合材来使用。 
2-3.步骤3
将步骤3的示意图示于图3(c)中。步骤3是如下步骤：通过加热处理使熔融性导电部11进行回流焊，将对向的熔融性导电部11以及导电部22接合，由此使基板12与基板21电性连接。 
上述回流焊中的加热温度是根据熔融性导电部11的熔融温度、或本发明的助焊剂组成物13的种类来适当决定，通常为80℃～300℃，优选为100℃～270℃。 
通过上述回流焊，对向的熔融性导电部11与导电部22接合，形成导电连接部31。如此，通过步骤3，基板12与基板21经由导电连接部31而电性连接。 
在回流焊后，存在助焊剂残渣的情况下，也可以利用溶剂进行清洗来去除助焊剂残渣。用于清洗的溶剂可列举上述“1-3.其他成分”中记载的溶剂。尤其在糖醇(A)与聚合物(B)均为水溶性的情况下，如上所述可通过水清洗来去除助焊剂残渣，组成物的操作性变得容易，并且环境适合性提高。 
3.电性连接结构
本发明的电性连接结构是利用上述电性连接结构的形成方法来形成的电性连接结构。本发明的电性连接结构由于使用上述助焊剂组成物来形成，因此例如图3中的熔融性导电部11或导电部22不会氧化。因此，本发明的电性连接结构成为良好的电性连接结构。本发明的电性连接结构能够用于各种半导体装置等。 
4.半导体装置
若使用本发明的助焊剂组成物，则能够制造包括上述电性连接结构、半导体元件或半导体封装、固体摄像元件以及光半导体元件等的半导体装置。 
实施例 
以下，列举实例，对本发明进行具体说明。本发明不受这些实例的任何限制。实例中的“份”为质量基准。 
[1]助焊剂组成物的准备
实例1～实例20以及比较例1 
通过将下述表1所示的成分以表1所示的比率进行混合，来制成实例1～实例20以及比较例1的助焊剂组成物。表1所示的数值表示质量份。各成分的详情如下所述。“Mw”是利用凝胶渗透色谱法来测定的聚苯乙烯换算的重量平均分子量。粘度是利用B型粘度计在23℃下测定的值。 
A-1：甘油 
B-1：聚乙烯吡咯烷酮(Mw：6000～15000，聚合度：60～930) 
B-2：聚乙烯醇(皂化度：87mol％～89mol％，聚合度：300～500) 
C-1：聚乙二醇(粘度：0.003Pa·s～0.02Pa·s)
C-2：四乙二醇 
C-3：聚氧丙烯聚甘油醚(0.3Pa·s～0.5Pa·s)
C-4：二甘油辛酸酯(粘度：0.3Pa·s～0.5Pa·s)
C-5：聚氧乙烯聚甘油醚(粘度：0.3Pa·s～0.5Pa·s) 
[表1] 
    A-1   B-1   B-2   C-1   C-2   C-3   C-4   C-5   清洗性   焊料的形状
  实例1   100   100   _   _   80   _   _   _   A   A
  实例2   100   100   _   60   80   _   _   _   A   A
  实例3   100   150   _   _   80   _   _   _   A   B
  实例4   100   100   _   _   1400   _   60   _   A   A
  实例5   100   100   _   _   3800   _   60   -   A   A
  实例6   100   100   _   _   600   60   _   _   A   A
  实例7   100   100   _   _   1400   60   _   _   A   A
  实例8   100   100   _   _   3800   60   _   _   A   A
  实例9   100   _   100   _   1400   60   _   _   A   A
  实例10   100   _   100   _   3800   60   _   _   A   A
  实例11   100   100   _   _   600   _   _   60   A   A
  实例12   100   100   _   _   1400   _   _   60   A   A
  实例13   100   100   _   _   3800   _   _   60   A   A
  实例14   100   100   -   _   600   _   60   _   A   A
  实例15   100   50   _   _   80   _   _   _   A   A
  实例16   100   100   _   60   3800   _   _   _   A   A
  实例17   100   100   _   _   3800   _   60   _   A   A
  实例18   100   100   _   _   3800   60   _   _   A   A
  实例19   100   _   100   _   3800   60   _   _   A   A
  实例20   100   100   _   _   3800   _   _   60   A   A
 比较例1   100   _   _   60   80   _   _   _   A   C
[2]助焊剂组成物的评价
对实例1～实例20以及比较例1的助焊剂组成物进行以下的评价。将结果示于表1中。 
利用旋转涂布法，以柱凸块被助焊剂组成物包覆的方式，将实例1～实例15以及比较例1的助焊剂组成物涂布于设置有多个柱凸块的直径为4英寸的硅晶圆上。另外，利用喷墨法，以柱凸块被助焊剂组成物包覆的方式，将实例16～实例20的助焊剂组成物涂布于设置有多个柱凸块的直径为4英寸的硅晶圆上。柱凸块的尺寸为纵100μm、横100μm、高100μm，硅晶圆侧的下半部分是包含铜的柱部，上半部分是包含Sn-Ag合金的焊料部。在图1 所示的温度条件下使焊料进行回流焊，然后以纯水清洗硅晶圆。 
此时，通过利用电子显微镜来观察清洗后的硅晶圆，依据下述基准来评价是否能够通过利用纯水进行清洗来去除助焊剂残渣，作为“清洗性”。 
清洗性
“A”：未残留助焊剂的残渣。 
“C”：残留助焊剂的残渣。 
另外，通过利用电子显微镜来观察清洗后的柱凸块的焊料部的形状，依据使用作为“焊料的形状”的图2(a)～图2(c)的下述基准，来评价是否在回流焊时柱凸块未从助焊剂组成物中露出而由助焊剂组成物包覆。 
图2(a)～图2(c)分别是实例1～实例20以及比较例1中使用的硅晶圆上设置的回流焊后的柱凸块41的图，表示从与硅晶圆平行的方向，且与柱凸块41的侧面平行的方向看到的柱凸块41的形状。柱凸块41具有柱部42及焊料部43。回流焊时柱凸块41从助焊剂组成物中露出的越多，柱凸块41的焊料部43被越强地氧化，使焊料部43的形状产生大的变化。因此，能够根据清洗后的焊料部43的形状，来评价回流焊时柱凸块41从助焊剂组成物中露出的程度。 
图2(a)所示的焊料部43的形状是在焊料部43未氧化的情况下，即回流焊时柱凸块41未从助焊剂组成物中露出的情况下显现出的形状。图2(b)所示的焊料部43的形状是在焊料部43的氧化弱的情况下，即回流焊时柱凸块41从助焊剂组成物中露出，但露出的部分少的情况下显现出的形状。图2(c)所示的焊料部43的形状是在焊料部43的氧化强的情况下，即回流焊时柱凸块41从助焊剂组成物中露出，且露出的部分多的情况下显现出的形状。即，若焊料部43未被氧化，则成为接近于半球的形状，氧化的程度变得越大，则成为越接近于长方体的形状。 
焊料的形状
“A”：焊料部43的形状是图2(a)所示的形状。 
“B”：焊料部43的形状是图2(b)所示的形状。 
“C”：焊料部43的形状是图2(c)所示的形状。 

Claims (7)

1.一种助焊剂组成物，其特征在于：含有糖醇(A)、以及具有下述式(1)所示的重复结构单元的聚合物(B)：
[化1]
式中，R1表示氢原子或者甲基，Z表示羟基、侧氧基、羧基、甲酰基、氨基、硝基、巯基、磺基、恶唑啉基、酰亚胺基、具有酰胺结构的基团或者具有这些基团的基团。
2.根据权利要求1所述的助焊剂组成物，其特征在于：上述式(1)中的Z为具有酰胺结构的基团。
3.根据权利要求1或2所述的助焊剂组成物，其特征在于：相对于上述糖醇(A)100质量份，上述聚合物(B)的含量为10质量份～200质量份。
4.根据权利要求1或2所述的助焊剂组成物，其特征在于：上述糖醇(A)及上述聚合物(B)为水溶性。
5.一种电性连接结构的形成方法，其特征在于：使用根据权利要求1或2所述的助焊剂组成物，对熔融性导电部进行回流焊。
6.一种电性连接结构，其特征在于：利用根据权利要求5所述的电性连接结构的形成方法而形成。
7.一种半导体装置，其特征在于：具有根据权利要求6所述的电性连接结构。
CN201210214359XA 2011-08-08 2012-06-25 助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置 Pending CN102922173A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011172994 2011-08-08
JP2011-172994 2011-08-08
JP2012-062305 2012-03-19
JP2012062305A JP5218686B2 (ja) 2011-08-08 2012-03-19 フラックス組成物、電気的接続構造の形成方法、電気的接続構造および半導体装置

Publications (1)

Publication Number Publication Date
CN102922173A true CN102922173A (zh) 2013-02-13

Family

ID=47637174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210214359XA Pending CN102922173A (zh) 2011-08-08 2012-06-25 助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置

Country Status (5)

Country Link
US (1) US20130037957A1 (zh)
JP (1) JP5218686B2 (zh)
KR (1) KR101281469B1 (zh)
CN (1) CN102922173A (zh)
TW (1) TWI411489B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11504814B2 (en) 2011-04-25 2022-11-22 Holtec International Air cooled condenser and related methods
US10512990B2 (en) 2012-12-03 2019-12-24 Holtec International, Inc. Brazing compositions and uses thereof
JP2014168791A (ja) * 2013-03-01 2014-09-18 Hitachi Chemical Co Ltd フラックスフィルム、フリップチップ接続方法、及び半導体装置
JP5874683B2 (ja) * 2013-05-16 2016-03-02 ソニー株式会社 実装基板の製造方法、および電子機器の製造方法
TWI607587B (zh) * 2016-09-13 2017-12-01 台灣琭旦股份有限公司 固晶穩固製程
JP6332525B1 (ja) * 2017-05-25 2018-05-30 千住金属工業株式会社 ソルダペースト
JP6332526B1 (ja) * 2017-05-25 2018-05-30 千住金属工業株式会社 フラックス
US10881007B2 (en) * 2017-10-04 2020-12-29 International Business Machines Corporation Recondition process for BGA using flux
JP6993386B2 (ja) * 2019-06-28 2022-02-04 株式会社タムラ製作所 はんだ組成物及び電子回路実装基板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1565791A (zh) * 2003-07-03 2005-01-19 梁树华 一种免洗可成膜性水基型助焊剂
WO2005058985A2 (de) * 2003-12-17 2005-06-30 Solvay Fluor Gmbh Flussmittel
CN101011784A (zh) * 2007-02-06 2007-08-08 北京蓝景创新科技有限公司 一种无铅合金焊锡膏及其制备方法
CN101049661A (zh) * 2007-05-11 2007-10-10 北京工业大学 无铅焊料用无卤素无松香免清洗助焊剂
CN101670500A (zh) * 2009-09-25 2010-03-17 广州有色金属研究院 一种不锈钢钎焊用水性镍焊膏
CN101774096A (zh) * 2009-12-30 2010-07-14 高新锡业（惠州）有限公司 防伪焊锡丝及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837932A (en) * 1972-03-27 1974-09-24 Lake Chemical Co Fluxes for use in bonding plates of storage batteries to connecting straps
SU889352A1 (ru) * 1980-02-04 1981-12-15 Предприятие П/Я А-1695 Водорастворимый флюс
JP2646400B2 (ja) * 1990-07-12 1997-08-27 千住金属工業株式会社 クリームはんだ
US5225315A (en) * 1991-09-19 1993-07-06 Dymax Corporation Water soluble formulation for masking and the like, and method utilizing the same
SG97811A1 (en) * 1999-09-24 2003-08-20 Advanpack Solutions Pte Ltd Fluxing adhesive
US6796482B2 (en) * 2002-10-31 2004-09-28 Freescale Semiconductor, Inc. Phase separated system for fluxing
US7059512B2 (en) * 2002-11-06 2006-06-13 Ricoh Company, Ltd. Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device
JP4846572B2 (ja) * 2004-05-27 2011-12-28 イビデン株式会社 多層プリント配線板
CN102107340B (zh) * 2009-12-24 2015-10-21 汉高股份有限及两合公司 一种焊膏组合物、焊膏及一种助焊剂

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1565791A (zh) * 2003-07-03 2005-01-19 梁树华 一种免洗可成膜性水基型助焊剂
WO2005058985A2 (de) * 2003-12-17 2005-06-30 Solvay Fluor Gmbh Flussmittel
CN101011784A (zh) * 2007-02-06 2007-08-08 北京蓝景创新科技有限公司 一种无铅合金焊锡膏及其制备方法
CN101049661A (zh) * 2007-05-11 2007-10-10 北京工业大学 无铅焊料用无卤素无松香免清洗助焊剂
CN101670500A (zh) * 2009-09-25 2010-03-17 广州有色金属研究院 一种不锈钢钎焊用水性镍焊膏
CN101774096A (zh) * 2009-12-30 2010-07-14 高新锡业（惠州）有限公司 防伪焊锡丝及其制造方法

Also Published As

Publication number Publication date
TW201306987A (zh) 2013-02-16
JP5218686B2 (ja) 2013-06-26
JP2013052439A (ja) 2013-03-21
KR20130018491A (ko) 2013-02-25
US20130037957A1 (en) 2013-02-14
TWI411489B (zh) 2013-10-11
KR101281469B1 (ko) 2013-07-03

Similar Documents

Publication Publication Date Title
CN102922173A (zh) 助焊剂组成物、电性连接结构的形成方法、电性连接结构以及半导体装置
KR101133960B1 (ko) 납땜용 플럭스 및 땜납 페이스트 조성물
KR101414418B1 (ko) 땜납 페이스트
TWI488705B (zh) Solder paste and solder paste
TWI760588B (zh) 助焊劑及焊膏
WO2016028058A1 (ko) 무연 솔더 합금 조성물 및 무연 솔더 합금의 제조 방법
CN110193684B (zh) 助焊剂及焊膏
KR101142811B1 (ko) 납땜용 플럭스, 땜납 페이스트 조성물 및 납땜 방법
JP2013069475A (ja) 導電性ペースト、及び該導電性ペーストを焼成して得られる接合体
JP6511768B2 (ja) はんだバンプの形成方法
KR102242412B1 (ko) 플럭스 조성물, 솔더 페이스트 조성물 및 전자 회로 기판
JP6460473B2 (ja) はんだ付け用フラックスおよびはんだペースト組成物
JP2007216296A (ja) ハンダ用フラックス及び該フラックスを用いたハンダペースト並びに電子部品搭載基板の製造方法
US10259083B2 (en) Cleaning flux, cleaning solder paste, and solder joint
KR102525010B1 (ko) 플럭스 및 솔더 페이스트
JP6668664B2 (ja) ハンダペースト用水溶性フラックス及びハンダペースト
JP2007260776A (ja) 金錫合金ハンダペースト及び該ペーストを用いた電子部品搭載基板の製造方法
CN110603120B (zh) 焊膏用助焊剂、焊膏、使用焊膏的焊锡凸块的形成方法及接合体的制造方法
JP7324024B2 (ja) フラックス及びソルダペースト
KR102150263B1 (ko) 무연솔더 페이스트
CN117083148B (zh) 助焊剂以及焊膏
JP2004306092A (ja) 回路基板はんだ付用フラックス及びソルダーペースト
JP6627949B1 (ja) フラックス、フラックスの塗布方法及びはんだボールの搭載方法
JP2014004590A (ja) はんだ組成物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130213