CN102903737A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN102903737A
CN102903737A CN2012102524820A CN201210252482A CN102903737A CN 102903737 A CN102903737 A CN 102903737A CN 2012102524820 A CN2012102524820 A CN 2012102524820A CN 201210252482 A CN201210252482 A CN 201210252482A CN 102903737 A CN102903737 A CN 102903737A
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CN
China
Prior art keywords
barrier layer
layer
semiconductor device
resistance region
low
Prior art date
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Pending
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CN2012102524820A
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English (en)
Chinese (zh)
Inventor
竹内克彦
谷口理
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102903737A publication Critical patent/CN102903737A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4735—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having delta-doped or planar-doped donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H10D30/4738—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material having multiple donor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2012102524820A 2011-07-28 2012-07-20 半导体器件及其制造方法 Pending CN102903737A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-165873 2011-07-28
JP2011165873 2011-07-28
JP2012126040A JP2013048212A (ja) 2011-07-28 2012-06-01 半導体装置および半導体装置の製造方法
JP2012-126040 2012-06-01

Publications (1)

Publication Number Publication Date
CN102903737A true CN102903737A (zh) 2013-01-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102524820A Pending CN102903737A (zh) 2011-07-28 2012-07-20 半导体器件及其制造方法

Country Status (4)

Country Link
US (2) US9136334B2 (enExample)
JP (1) JP2013048212A (enExample)
CN (1) CN102903737A (enExample)
TW (1) TWI512973B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143569A (zh) * 2013-05-08 2014-11-12 索尼公司 半导体器件、天线开关电路和无线电通信装置
CN111146283A (zh) * 2019-12-31 2020-05-12 杭州士兰集成电路有限公司 高电子迁移率晶体管及其制造方法
CN114551340A (zh) * 2022-01-14 2022-05-27 深圳镓芯半导体科技有限公司 第三代半导体接触窗结构及其制造方法

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KR20120060303A (ko) * 2010-12-02 2012-06-12 엘지전자 주식회사 질화물 반도체 소자의 제조 방법 및 이에 의해 제조된 질화물 반도체 소자
KR20130008281A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 파워소자의 제조방법
US8912573B2 (en) 2013-02-26 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device containing HEMT and MISFET and method of forming the same
JP6369605B2 (ja) * 2013-05-08 2018-08-08 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
JP6291997B2 (ja) * 2013-06-13 2018-03-14 富士通株式会社 半導体装置の製造方法
JP6449432B2 (ja) * 2014-09-19 2019-01-09 インテル・コーポレーション マイクロエレクトロニクストランジスタにおいてリークを低減するために、ドープされたサブ構造体を作成するための装置及び方法
US10411125B2 (en) * 2016-11-23 2019-09-10 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device having high linearity-transconductance
US20190267481A1 (en) * 2018-02-26 2019-08-29 Duet Microelectronics LLC Field-Effect Transistors (FETs)
US20190267480A1 (en) * 2018-02-26 2019-08-29 Duet Microelectronics Inc. Anti-barrier-conduction (abc) spacers for high electron-mobility transistors (hemts)
WO2020087271A1 (zh) * 2018-10-30 2020-05-07 苏州晶湛半导体有限公司 半导体结构及其制造方法
WO2021113308A1 (en) * 2019-12-03 2021-06-10 Cambridge Electronics, Inc. Iii-nitride transistor with a modified drain access region
JP7170940B2 (ja) * 2020-05-13 2022-11-14 三菱電機株式会社 半導体装置
WO2022019017A1 (ja) * 2020-07-20 2022-01-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体モジュール、及び無線通信装置
US12402348B2 (en) * 2021-05-20 2025-08-26 Wolfspeed, Inc. Field effect transistor with selective channel layer doping
CN114171387A (zh) * 2021-12-07 2022-03-11 苏州能屋电子科技有限公司 基于p型栅的增强型hemt及其制备方法

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TW200618042A (en) * 2004-11-17 2006-06-01 Agilent Technologies Inc Field effect transistor having a carrier exclusion layer
US20060220165A1 (en) * 2002-07-19 2006-10-05 Ichiro Hase Semiconductor device

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JPH11150264A (ja) * 1997-09-12 1999-06-02 Sony Corp 半導体装置およびその製造方法ならびに無線通信装置
US6365925B2 (en) 1997-09-12 2002-04-02 Sony Corporation Semiconductor device
JP3633587B2 (ja) * 2001-07-19 2005-03-30 ソニー株式会社 半導体装置の製造方法
JP4371668B2 (ja) * 2003-02-13 2009-11-25 三菱電機株式会社 半導体装置
JP2005039084A (ja) * 2003-07-16 2005-02-10 Sony Corp バイアス回路および半導体装置の製造方法
JP4041075B2 (ja) * 2004-02-27 2008-01-30 株式会社東芝 半導体装置
JP2006114659A (ja) * 2004-10-14 2006-04-27 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JP5065616B2 (ja) * 2006-04-21 2012-11-07 株式会社東芝 窒化物半導体素子
JP5348364B2 (ja) * 2007-08-27 2013-11-20 サンケン電気株式会社 ヘテロ接合型電界効果半導体装置
US8519438B2 (en) * 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
JP2010118556A (ja) * 2008-11-13 2010-05-27 Furukawa Electric Co Ltd:The 半導体装置および半導体装置の製造方法
JP5684574B2 (ja) * 2008-12-04 2015-03-11 ルネサスエレクトロニクス株式会社 半導体装置
JP5678485B2 (ja) * 2009-08-03 2015-03-04 ソニー株式会社 半導体装置
US8604486B2 (en) * 2011-06-10 2013-12-10 International Rectifier Corporation Enhancement mode group III-V high electron mobility transistor (HEMT) and method for fabrication

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US20060220165A1 (en) * 2002-07-19 2006-10-05 Ichiro Hase Semiconductor device
US20050189989A1 (en) * 2004-02-19 2005-09-01 Sony Corporation Power amplification apparatus, and mobile communication terminal apparatus
TW200618042A (en) * 2004-11-17 2006-06-01 Agilent Technologies Inc Field effect transistor having a carrier exclusion layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143569A (zh) * 2013-05-08 2014-11-12 索尼公司 半导体器件、天线开关电路和无线电通信装置
CN104143569B (zh) * 2013-05-08 2019-05-10 索尼公司 半导体器件、天线开关电路和无线电通信装置
CN111146283A (zh) * 2019-12-31 2020-05-12 杭州士兰集成电路有限公司 高电子迁移率晶体管及其制造方法
CN114551340A (zh) * 2022-01-14 2022-05-27 深圳镓芯半导体科技有限公司 第三代半导体接触窗结构及其制造方法

Also Published As

Publication number Publication date
JP2013048212A (ja) 2013-03-07
US9136334B2 (en) 2015-09-15
TWI512973B (zh) 2015-12-11
US9773899B2 (en) 2017-09-26
US20130062664A1 (en) 2013-03-14
TW201306258A (zh) 2013-02-01
US20160225885A1 (en) 2016-08-04

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Application publication date: 20130130