CN102896421B - Adopt laser micro-machining system and the processing method thereof of LCOS - Google Patents
Adopt laser micro-machining system and the processing method thereof of LCOS Download PDFInfo
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- CN102896421B CN102896421B CN201210265415.2A CN201210265415A CN102896421B CN 102896421 B CN102896421 B CN 102896421B CN 201210265415 A CN201210265415 A CN 201210265415A CN 102896421 B CN102896421 B CN 102896421B
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Abstract
The present invention relates to a kind of laser micro-machining system adopting LCOS, described system includes the laser generator (1) for generation of laser, the light path of the laser that described laser generator (1) sends is disposed with beam expanding lens (2), LCOS(3), beam-shrinked mirror (5) and focus lamp (6), described LCOS(3) be connected with a computer processor (4).The present invention adopts the laser micro-machining system of LCOS, by adopt computer program realize the direction and intensity of laser beam change and control, avoid use mechanical moving element, using flexibility strong and machining accuracy is stablized, is a kind of revolutionary change to the Beam Control of laser micro-processing equipment and treatment technology.
Description
Technical field
The present invention relates to a kind of laser micro-machining system and the processing method thereof that adopt LCOS (LiquidCrystalonSilicon, liquid crystal on silicon or liquid crystal silicon processor), belong to laser micro-machining technology field.
Background technology
In current laser micro-processing equipment, what laser beam controlled employing is galvanometer (galvanometricscanner) or Beam rotation device (helical) (or optically-active module) technology, they are all rendered as mechanical moving element in process equipment, the former respectively adopts one to deflect minute surface at two-dimensional direction, the latter adopts motor to drive prism to rotate, this two class formation all to environmental condition sensitivity, mechanical wear, often need to regulate, lack flexibility, volume and weight is large, thus becomes a technical problem underlying in high-precision laser micro Process equipment.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, a kind of easy to use and the laser micro-machining system of the employing LCOS that machining accuracy is stable and processing method thereof are provided.
The object of the present invention is achieved like this: a kind of laser micro-machining system adopting LCOS, described system includes the laser generator for generation of laser, the light path of the laser that described laser generator sends is disposed with beam expanding lens, LCOS, beam-shrinked mirror and focus lamp, and described LCOS is connected with a computer processor.
The present invention adopts the laser micro-machining system of LCOS, injects laser directive beam-shrinked mirror after LCOS reflection of LCOS.
The present invention adopts the laser micro-machining system of LCOS, injects directive beam-shrinked mirror after the laser penetration LCOS of LCOS.
The present invention adopts the processing method of the laser micro-machining system of LCOS, and described method includes following steps:
The laser that step one, laser generator send incides on LCOS after beam expanding lens;
Step 2, the computer processor be connected with LCOS change the voltage be carried on the liquid crystal layer of LCOS by computer program, thus change the index distribution of liquid crystal layer, make laser change the direction of advance light path;
Laser directive workpiece to be added after beam-shrinked mirror and focus lamp of step 3, injection LCOS.
The present invention adopts the processing method of the laser micro-machining system of LCOS, and described laser generator sends multiple laser or beam of laser is divided into multiple laser, and described LCOS is divided into multiple isolated area, the zones of different on multiple laser difference directive LCOS.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention adopts the work of computer program control LCoS, and can change the exit direction of laser beam fast and at random, and reaction speed is fast and accurate; This technology does not have mechanical moving element, therefore without wearing and tearing and vibration, not affected by environment, substantially increase use flexibility and the precision of whole system, overcome the shortcoming that the frame for movement feature such as galvanometer and optically-active module has, multiple beam work can be realized in middle low power laser micro Process equipment, beam direction can dynamic adjustments, and has the reconfigurabilities such as laser power adjustment, wave beam restructuring; This invention, by adopting optics wave beam converter technique, overcomes the use restriction of LCoS under higher laser power.
Accompanying drawing explanation
Fig. 1 is the structural representation under the present invention adopts the laser micro-machining system of LCOS to work in reflective-mode.
Fig. 2 is the structural representation under the present invention adopts the laser micro-machining system of LCOS to work in transmission mode.
Wherein: laser generator 1, beam expanding lens 2, LCOS3, computer processor 4, beam-shrinked mirror 5, focus lamp 6, workpiece to be added 7.
Detailed description of the invention
See Fig. 1 and Fig. 2, a kind of laser micro-machining system adopting LCOS that the present invention relates to, described system includes the laser generator 1 for generation of laser, the light path of the laser that described laser generator 1 sends is disposed with beam expanding lens 2, LCOS3 and beam-shrinked mirror 5, and the laser of injection beam-shrinked mirror 5 focuses on rear directive workpiece 7 to be added via focus lamp 6;
LCOS (LiquidCrystalonSilicon, liquid crystal on silicon), described LCOS are formed primarily of silicon integrated circuit layer, liquid crystal layer and ITO electrode layer; The silicon integrated circuit layer of LCOS3 is connected with computer processor 4, can realize the control to LCOS3 by the program on computer processor 4, and its control principle is:
The electrical connection with the silicon integrated circuit layer of LCOS3 is realized by computer processor 4, can realize changing the voltage's distribiuting of the liquid crystal layer of LCOS3 and controlling by the program on computer processor 4, and then cause the change of distribution of liquid crystal layer refractive index, liquid crystal layer is rendered as matrix liquid crystal unit, wherein each unit independently can be controlled by program, because liquid crystal layer can be divided into each independently unit by electrode, its refractive index depends on the voltage put on electrode, thus can be realized the control of the refractive index to liquid crystal layer different units and region conveniently by the voltage on control electrode by the program on computer processor 4, namely a kind of phase grating is formed, result, the laser injecting LCOS3 can obtain the output opticpath of needs by changing phase grating parameter, what achieve light beam dynamically changes nyctitropic operation.Similarly, the control of the refractive index value to liquid crystal layer different units and region can be realized by voltage on control electrode by the program on computer processor 4, to make laser its intensity after phase grating injecting LCOS3 be changed, thus realize the adjustment of Laser Micro-Machining dynamic power.Laser beam direction controlling and laser beam power control to arrange execution automatic operation by computer program.
See Fig. 1, when the present invention adopts the laser micro-machining system of LCOS to work under reflective-mode, the LCOS adopted has a minute surface dielectric layer between liquid crystal layer and silicon integrated circuit layer, the laser injecting LCOS3 is injected into minute surface dielectric layer after ITO electrode layer and liquid crystal layer, more successively through liquid crystal layer and ITO electrode layer injection LCOS3 after the reflection of minute surface dielectric layer;
See Fig. 2, when the present invention adopts the laser micro-machining system of LCOS to work under transmission mode, the silicon integrated circuit layer of the LCOS adopted is for being produced on the thin film silicon integrated circuit on sapphire substrate, and the laser injecting LCOS3 penetrates LCOS3 through after silicon integrated circuit layer, liquid crystal layer and ITO electrode layer;
The processing method of the laser micro-machining system of a kind of LCOS of employing that the present invention relates to includes following steps:
The laser that step one, laser generator 1 send incides on LCOS3 after beam expanding lens 2;
Step 2, the computer processor 4 be connected with the silicon integrated circuit layer on LCOS3 are carried in the voltage on LCOS3 liquid crystal layer by routine change, thus change the refractive index of liquid crystal layer, make laser reach the direction changing advance light path or the object changing its intensity;
Laser directive workpiece 7 to be added after beam-shrinked mirror 5 and focus lamp 6 of step 3, injection LCOS3;
Add man-hour, multiple laser beam can be adopted, LCOS3 is divided into multiple isolated area, zones of different on the laser difference directive LCOS3 that different laser beam sends, independently can be controlled the multiple regions on LCOS3 easily by the program on computer processor 4, thus realize control and the process of multiple beam.
In the present invention, the control principle of LCOS is:
Driven LCOS by special computer program and electronic driver, liquid crystal layer just produces and depends on and execute alive variations in refractive index, form certain phase grating; Phase grating can change the wavefront of the light beam by it, thus the direction of light beam or its intensity are changed; Change by changing computer program the parameter that namely voltage's distribiuting being applied to liquid crystal cells changes phase grating, the direction of beamformer output or its intensity also change thereupon.
For a two-dimentional LCoS, export the angle θ of First order diffraction wave beam in x-and y-direction
x/yby light wavelength lambda and the liquid crystal array parameter S in the phase grating cycle
x/y(liquid crystal cells dimension) and N
x/y(liquid crystal cells quantity) determines:
θ
x/y＝λ/[(S
x/y)(N
x/y)]
After on-load voltage distribution, just form phase grating because liquid crystal layer only has, therefore can change S by the instruction in reprogramming
x/y(liquid crystal cells dimension) and N
x/ythe numerical value of (liquid crystal cells quantity), thus the angle of the laser beam of LCoS output can be changed arbitrarily by program.
Usual First order diffraction wave beam has the angle of high efficiency and ± 0.23 °, but the deflection angle being through its beamformer output of LCoS of optimal design can reach ± 7.4 °.And wave beam control efficiency η can be determined by digitized phase quantity M:
η(M)＝[Sin(π/M)/(π/M)]
2
And the speed that this light beam changes is determined by the reaction speed of liquid crystal.Current liquid crystal response speed can arrive 10kHz i.e. 100 μ s, faster than the speed of galvanometer and Beam rotation device.If laser beam focus is to the hole of diameter 10 μm processing process diameter 100 μm, the operating rate so being controlled to determine by LCOS laser beam can reach 318 weeks per second;
Meanwhile, in the present invention, use a two-dimentional LCoS computer processor, multiple beam can be realized and control simultaneously; Its method needs division LCoS liquid crystal working region to be multiple subregion according to different, each subarea processing laser beam.By this way, the intellectuality of the efficiency of Laser Micro-Machining, flexibility and equipment can obtain raising.
Laser power density control principle in the present invention:
Because the laser power of Laser Micro-Machining use is in a watt level, therefore, the laser beam from laser instrument first must carry out beam expander, and then is incident on LCoS, thus ensures that LCoS works and can not damage under lower laser shot densities.In order to process material, the large-caliber laser Shu Bixu that LCoS exports is incident upon material surface after beam-shrinked mirror reduces beam dimensions and focus lamp focuses on;
For the LCoS-SLM product of HamamatsuX10468 series for high power laser application, the LASER Light Source (365nm, 532nm, 800nm, 1030nm, 1064nm) of these series of products for different wave length and the medium minute surface (350-420nm, 460-560nm, 750-850nm, 1000-1100nm) of different wave length, LCoS laser work power density can from 0.5W/cm depending on situation difference
2to 2W/cm
2.Therefore, the LCoS of a radius of clean-up 1.5cm can look the different laser power for 3.5W to 7W of situation, and larger LCoS can be used for higher laser power.Such as, control with a HamamatsuX10468 type 2-LCoS (medium minute surface is 750nm-850nm scope) and process Ti:Sapphire short-pulse laser (operation wavelength 800nm, pulse width 50fs, repetition rate 1kHz), when this LCoS diameter is 11mm, 2.73W mean power, lower 10 hours of 54GW peak power and can not damaging can be operated in.But this LCoS irradiates 3 hours rear center's position liquid crystal in same laser and starts to melt when diameter reduces to 9mm.
With power density (P
d), relation P between beam diameter (D) and laser power P
d(W/cm
2)=(250/D
2) P, (D is that laser beam diameter is in units of mm) can calculate the parameter of required optical beam transformation:
(D
1 2)(P
d1)＝(D
2 2)(P
d2)
When 2mm laser beam is with 10W incidence, require that HamamatsuX10468 has 2W/cm
2the LCoS of power density has the work area of diameter 35mm.The conversion ratio of wave beam transform optical system is 17.5;
The programme-control of LCoS in the present invention
With computer program, simple beam or multi-beam laser are performed to the change of quick and instantaneous laser direction and laser power; Its principle writes computer program to change the voltage's distribiuting putting on LCoS unit, thus produce the index distribution of a liquid crystal region and obtain the effect of a phase grating.This grating parameter can be arranged by computer program and change, therefore for by the light beam in this region, because its wavefront is changed thus the beam direction exported is changed.This change can be need to be produced fast by computer program according to different process application.
Claims (2)
1. one kind adopts the laser micro-machining system of LCOS, it is characterized in that: described system includes the laser generator (1) for generation of laser, the light path of the laser that described laser generator (1) sends is disposed with beam expanding lens (2), LCOS(3), beam-shrinked mirror (5) and focus lamp (6), described LCOS(3) be connected with a computer processor (4); Inject LCOS(3) laser through LCOS(3) directive beam-shrinked mirror (5) after reflection, or inject LCOS(3) laser penetration LCOS(3) directive beam-shrinked mirror (5) afterwards.
2. a kind of processing method adopting the laser micro-machining system of LCOS as claimed in claim 1, is characterized in that: described method includes following steps:
The laser that step one, laser generator (1) send incides LCOS(3 after beam expanding lens (2)) on;
Step 2 and LCOS(3) computer processor (4) that is connected changed by computer program be carried in LCOS(3) liquid crystal layer on voltage, thus change the index distribution of liquid crystal layer, make laser change the direction of advance light path or change its intensity;
Step 3, injection LCOS(3) laser directive workpiece to be added (7) after beam-shrinked mirror (5) and focus lamp (6);
Described laser generator (1) sends multiple laser or beam of laser is divided into multiple laser, described LCOS(3) be divided into multiple isolated area, multiple laser is directive LCOS(3 respectively) on zones of different.
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| CN107239088B (en) * | 2017-07-14 | 2018-10-09 | 中国科学院微电子研究所 | A kind of control method and system of laser processing wafer |
| CN107214418B (en) * | 2017-07-14 | 2018-10-23 | 中国科学院微电子研究所 | A kind of method and device of laser processing wafer |
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| JP5599563B2 (en) * | 2008-12-25 | 2014-10-01 | 浜松ホトニクス株式会社 | Light control device and light control method |
| CN202804477U (en) * | 2012-07-30 | 2013-03-20 | 沈明亚 | Laser micromachining system with LCOS (liquid crystal on silicon) |
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| WO2009063670A1 (en) * | 2007-11-14 | 2009-05-22 | Hamamatsu Photonics K.K. | Laser machining device and laser machining method |
| CN101614876A (en) * | 2009-07-29 | 2009-12-30 | 中国人民解放军国防科学技术大学 | A kind of arbitrary beam shaping new method and device |
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