CN107214418B - A kind of method and device of laser processing wafer - Google Patents
A kind of method and device of laser processing wafer Download PDFInfo
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- CN107214418B CN107214418B CN201710574565.4A CN201710574565A CN107214418B CN 107214418 B CN107214418 B CN 107214418B CN 201710574565 A CN201710574565 A CN 201710574565A CN 107214418 B CN107214418 B CN 107214418B
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- 238000012545 processing Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 57
- 238000009826 distribution Methods 0.000 claims abstract description 32
- 230000008859 change Effects 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims description 38
- 238000003754 machining Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 7
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 25
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000000446 fuel Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 72
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
The present invention provides a kind of method and device of laser processing wafer.The method includes：Change the relative position between laser beam and predetermined cuts road along the predetermined cuts road direction of wafer upper surface to form groove on the predetermined cuts road；The focus position that optical path modulation device sexually revises the laser beam in wafer upper surface performance period is controlled according to the tranmitting frequency of laser, and is formed along predetermined cuts road direction and customizes focus distribution combination.The present invention can realize that the fuel factor of laser processing is equalized by the focus position of optical path modulation device periodically-varied laser beam in wafer upper surface, reduce impact of the violent energy to Low-K materials, Low-K layers of rupture are prevented so that peeling off, improve the homogeneity of laser processing technology and its reliability of device.
Description
Technical field
The present invention relates to semiconductor processing technology field more particularly to a kind of method and devices of laser processing wafer.
Background technology
In recent years, with the continuous reduction and the continuous improvement of chip integration of feature sizes of semiconductor devices, metal
The resistance of parasitic capacitance and plain conductor between interconnection line, between multilayer wiring increased dramatically, and result in RC retardation ratio, power consumption
A series of problems, such as increase, limits the development of high-velocity electrons component.After device feature size is less than 90nm, wafer is necessary
Traditional SiO is replaced using advanced low-k materials2Layer (K=3.9~4.2), common Low-K materials have Dow Corning Corporation
FOx and porous SiLK materials, the low K thin-film materials of carbonado series of Applied Materials, Novellus System
FCN+ organic layers of CORAL, the CDO of Intel and NEC Corporation etc..
The use of Low-K materials also brings some problems.Whether mechanical strength or adhesiveness, Low-K materials are all
It is nothing like SiO2, this proposes challenge to scribing process.Most commonly seen problem is, due to lower machine in scribing processes
Tool intensity and adhesion strength so that Low-K materials stick in saw blade, and this not only lowers the efficiency of scribing, while also bringing
Insulating layer is stripped and generates clast from layer on surface of metal and be diffused into other functional areas etc. seriously affect yield after
Fruit.Laser processing has many advantages, such as that non-contact, precision is high, suitable material range is wide, machining path is flexibly controllable, is for crystalline substance
Circle scribing and the robust solution to solve the above problems.It is reported that the wafer that supplier provides has been strictly required in Apple Inc.
The technique of laser cutting Low-K materials must be used (i.e.：Laser Grooving techniques), this makes Feng Ce factories to such technique
The demand of technology and equipment significantly increases.Strictly speaking, laser beam not instead of " cutting " Low-K materials rely on laser energy
The high temperature melt metal layer and interlayer dielectric layer of generation, such laser cutting generate tool stress very little, because without occurring to divide
The problems such as layer or stripping.In addition, Hamamatsu Photonics K. K also invented the technology of " stealth cutting ", this technology is to utilize
There is the laser of transmittance wavelength to focus on inside wafer wafer and form modification layer, then makes wafer along modification layer by external force
It splits for individual chip.Using stealthy cutting technique, chip functions area can be made to avoid clast is generated in scribing processes
At pollution, but when being covered with separation layer or other functional layers above wafer, this will influence the transmission of laser, to influence
Modify the formation of layer.Therefore, when using stealthy cutting, the materials such as upper surface Low-K layers of laser ablation wafer should be also used first
Material.
But since laser beam is when etching forms groove on predetermined cuts road, due to Low-K layer thickness homogeneity etc.
Problem may cause cutting effect bad, and acutely energy will lead to Low-K layers of rupture so that stripping to the impact of Low-K materials
The problems such as falling.
Invention content
The method and device of laser processing wafer provided by the invention, can be by optical path modulation device periodically-varied in crystalline substance
The focus position of laser beam realizes the fuel factor equalization of laser processing in circle upper surface, reduces violent energy to Low-K
The impact of material prevents Low-K layers of rupture so that peeling off, improves the homogeneity of laser processing technology and its reliability of device.
In a first aspect, the present invention provides a kind of method of laser processing wafer, along the predetermined cuts road of wafer upper surface
Direction changes the relative position between laser beam and predetermined cuts road to form groove on the predetermined cuts road；The side
Method further includes：
Optical path modulation device periodically-varied laser beam in wafer upper surface is controlled according to the tranmitting frequency of laser
Focus position, and formed along predetermined cuts road direction and customize focus distribution combination.
Optionally, described that optical path modulation device periodically-varied is controlled in wafer upper surface according to the tranmitting frequency of laser
The focus position of laser beam, and formed to customize focus distribution and combine along predetermined cuts road direction and include：
Obtain the Low-K layer information of wafer upper surface or the flute profile information of groove；
It is determined according to the Low-K layers of information or the flute profile information of groove and customizes focus distribution combination；
The running parameter of optical path modulation device is determined according to the tranmitting frequency of the customization focus distribution combination and laser；
Control the focus point that optical path modulation device presses running parameter periodically-varied laser beam in wafer upper surface
Position.
Optionally, the optical path modulation device changes ranging from 0-30 μm of the focus position.
Optionally, changing within the scope of the focus position, according to the numerical value of changed focus position by light path control
Device processed is correspondingly arranged at least two gears.
Optionally, the running parameter includes that the gear of optical path modulation device and gear adjust frequency；Wherein,
It is to ensure that each gear adjusts the umber of pulse of the laser of fixed quantity respectively that the gear, which adjusts frequency,.
Optionally, running parameter periodically-varied laser beam in wafer upper surface is pressed in control optical path modulation device
Focus position in further include：
Obtain the thickness information of upper surface Low-K layers of wafer；
The first adjustment parameter of the optical path modulation device is determined according to thickness information, and according to the first adjustment state modulator light
The focus position of journey modulator adjustment laser beam in wafer upper surface.
Optionally, the thickness information for obtaining upper surface Low-K layers of wafer includes：
To one detection light beam of Low-K layers of wafer upper surface transmitting；
Obtain the reflected light of detection light beam；
The thickness information of Low-K layers of wafer upper surface is obtained according to the reflected light.
Optionally, running parameter periodically-varied laser beam in wafer upper surface is pressed in control optical path modulation device
Focus position in further include：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
The second adjustment parameter of the optical path modulation device is determined according to real-time flute profile information, and according to second adjustment parameter control
The focus position of optical path modulation device adjustment laser beam in wafer upper surface processed.
Second aspect, the present invention provide a kind of device of laser processing wafer, including：
Laser, for emitting laser beam；
Beam-expanding collimation element forms collimated light beam for expanding, collimating by the laser beam；
Optical path modulation device is set in beam-expanding collimation element and for being changed in wafer according to the tranmitting frequency of laser
The focus position of laser beam in surface, and formed along predetermined cuts road direction and customize focus distribution combination；
Concentrating element, for collimated light beam to be focused processing and forms after focus point transmitting to wafer upper surface Low-
K layers；
Platform is laser machined, for changing laser beam and predetermined cuts along the predetermined cuts road direction of wafer upper surface
Relative position between road on the predetermined cuts road to form groove；
Controller is connect with laser, optical path modulation device and laser processing unit respectively, for controlling and coordinating each first device
Work between part.
Optionally, described device further includes：
First beam splitter, for laser beam to be divided into detection light beam and machining beams, wherein the detection light beam is used for
Transmitting is to Low-K layers of wafer upper surface；The machining beams emit into beam-expanding collimation element and form collimated light beam；
Detection means, the reflected light for obtaining detection light beam.
Optionally, described device further includes：
Second beam splitter for collimated light beam to be divided at least two beams, and injects detection components and concentrating element respectively；
Detection components obtain the real time laser information of collimated light beam.
The method and device of laser processing wafer provided in an embodiment of the present invention, wherein on the one hand the method passes through light
The focus position of journey modulator periodically-varied laser beam in wafer upper surface realizes that the fuel factor of laser processing is average
Change, reduce impact of the violent energy to Low-K materials, prevents Low-K layers of rupture so that peeling off；On the other hand it is adjusted by light path
Device changes the light path of the first condenser lens in beam-expanding collimation element, avoid passing through the movement of mobile concentrating element generate mobile lag with
And larger displacement error, and then improve the machining yield, working efficiency, laser processing precision and separation of the method
The uniformity of wafer.
Description of the drawings
Fig. 1 is the flow chart for the method that one embodiment of the invention laser machines wafer；
Fig. 2 is the flow chart for the method that another embodiment of the present invention laser machines wafer；
Fig. 3 is the flow chart for the method that another embodiment of the present invention laser machines wafer；
Fig. 4 is that one embodiment of the invention difference angle of divergence corresponds to different focus schematic diagrames；
Fig. 5 is the schematic diagram that one embodiment of the invention customizes focus distribution combination；
Fig. 6 is the schematic diagram that another embodiment of the present invention customizes focus distribution combination；
Fig. 7 is the schematic diagram that another embodiment of the present invention customizes focus distribution combination；
Fig. 8 is the schematic diagram of one embodiment of the invention optical path modulation device；
Fig. 9 is the structural schematic diagram set that one embodiment of the invention laser machines wafer.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of method of laser processing wafer, along the predetermined cuts road direction of wafer upper surface
Change the relative position between laser beam and predetermined cuts road to form groove on the predetermined cuts road；The method packet
It includes：The focus point of optical path modulation device periodically-varied laser beam in wafer upper surface is controlled according to the tranmitting frequency of laser
Position, and formed along predetermined cuts road direction and customize focus distribution combination.
The method of laser processing wafer provided in an embodiment of the present invention is solved due to being etched on the predetermined cuts road
Formed groove when, due to violent energy to the impact of Low-K materials will lead to problems such as Low-K layer rupture so that peeling,
It is used in the present embodiment by the way that optical path modulation device is arranged in beam-expanding collimation element, the light path for changing laser beam realizes change
The focus position of laser beam in wafer upper surface；And then formed and customize focus distribution combination, for example, the customization
Focus distribution combination is as shown in Figures 3 to 5, wherein as shown in figure 5, the customization focus distribution is combined as bifocus combination
It is made of the focus point of two height distributions i.e. along predetermined cuts road direction, and alternately changes in two height；
Alternatively, as shown in Fig. 6, the customization focus distribution is combined as along predetermined cuts road direction being distributed by three height
Focus point composition, focus is sequentially connected and forms notched profile；Alternatively, as shown in fig. 7, the customization focus point
Cloth is equally made of the focus point of three height distributions along predetermined cuts road direction, when using the group different from Fig. 6
Close arrangement.Therefore, method described in the present embodiment can cut thicker Low-K layers of wafer, and by wafer
The quick control of the focus position of laser beam in surface is realized to the multifocal stippled of entire Low-K layers or even inside wafer
The fuel factor of laser processing is equalized, reduces impact of the violent energy to Low-K materials by erosion, prevent Low-K layer to rupture so that
It peels off.Meanwhile in order to solve since concentrating element weight is larger in the present embodiment, focusing point is realized by mobile concentrating element
The change set can lead to the problem of mobile lag is to influence processing effect, therefore, can be quickly and efficiently by light path adjuster
The light path for increasing the first condenser lens in beam-expanding collimation element, to change the focal position of the first condenser lens.Due to focus
The movement of position, the second condenser lens shoot laser angle of divergence change, and therefore, then coordinate concentrating element that can further realize focusing
Point accurately controls.
In conclusion the present embodiment the method is on the one hand by optical path modulation device periodically-varied in wafer upper surface
The focus position of laser beam realizes the fuel factor equalization of laser processing, reduces violent energy and is rushed to Low-K materials
It hits, prevents Low-K layers of rupture so that peeling off；On the other hand it is saturating the first focusing in beam-expanding collimation element to be changed by light path adjuster
The light path of mirror avoids passing through mobile concentrating element movement and generates mobile lag and larger displacement error, and then improves institute
State machining yield, working efficiency, laser processing precision and the uniformity for detaching wafer of method.
Optionally, as shown in Figure 1, described control optical path modulation device periodically-varied in crystalline substance according to the tranmitting frequency of laser
The focus position of laser beam in circle upper surface, and formed along predetermined cuts road direction and customize focus distribution combination packet
It includes：
The flute profile information of S11, the Low-K layer information for obtaining wafer upper surface or groove；
S12, determine that customizing focus distribution combines according to the Low-K layers of information or the flute profile information of groove；
S13, the work that optical path modulation device is determined according to the tranmitting frequency of the customization focus distribution combination and laser
Parameter；
S14, control optical path modulation device by the running parameter periodically-varied in wafer upper surface laser beam it is poly-
Focal position.
Specifically, method described in the present embodiment is to improve etching effect, then first according to the Low-K layers of information,
Or the flute profile information of groove determines and customizes focus distribution combination, wherein the Low-K layers of information or the flute profile information of groove
Combine corresponding with focus distribution is customized, correspondence is stored in controller；Meanwhile the Low-K layers of information includes
One or any combination in uniformity information, material information and thickness information；The flute profile information of the groove includes flute profile knot
Structure information and dimension information.For example, when described Low-K layer uniformly, thinner thickness and groove for "u"-shaped when, the customization
Change focus distribution combination to combine using bifocus as shown in Figure 5.
Then, the work of optical path modulation device is determined according to the tranmitting frequency of the customization focus distribution combination and laser
Parameter, wherein running parameter includes that the gear of optical path modulation device and gear adjust frequency；And the customization focus distribution combination
Corresponding with the gear of optical path modulation device, correspondence is stored in controller；As shown in figure 8, light path described in the present embodiment
Modulator is adjustable equipped with eight gears, and cooperation concentrating element can be realized efficient in μ m from 0 to 30 to focus position respectively
Regulation and control.
Also, the tranmitting frequency of the laser is corresponding with the gear of optical path modulation device adjusting frequency, correspondence
It is stored in controller.And the gear adjusts the integral multiple that frequency is the tranmitting frequency of the laser.Lead in the present embodiment
Cross controller control realize it is tens of arrive hundreds of pulses, in a fixed form, get to respectively surface and the surface of wafer with
Lower position.Meanwhile eight gears of the optical path modulation device adjust the independent assortment realization of frequency to entire focus control with gear
Customization focus distribution combination in range processed.
Finally, running parameter periodically-varied laser in wafer upper surface is pressed by controller control optical path modulation device
The focus position of light beam realizes the etching to wafer, and then improves the machining yield of the method, working efficiency, laser
Machining accuracy and the uniformity for detaching wafer.
Optionally, as shown in figures 4 and 8, the optical path modulation device changes ranging from 0-30 μm of the focus position.
Optionally, changing within the scope of the focus position, according to the numerical value of changed focus position by light path control
Device processed is correspondingly arranged at least two gears.
Optionally, the running parameter includes that the gear of optical path modulation device and gear adjust frequency；Wherein,
It is to ensure that each gear adjusts the umber of pulse of the laser of fixed quantity respectively that the gear, which adjusts frequency,.
Optionally, as shown in Figures 2 and 3, the running parameter periodically-varied is pressed on wafer in control optical path modulation device
Further include in the focus position of laser beam in surface：
Obtain the thickness information of upper surface Low-K layers of wafer；
The first adjustment parameter of the optical path modulation device is determined according to thickness information, and according to the first adjustment state modulator light
The focus position of journey modulator adjustment laser beam in wafer upper surface.
Specifically, by being detected and obtaining thickness information to the Low-K layers of wafer upper surface in real time in the present embodiment,
And then reflect the Low-K layer uniformitys of the wafer upper surface according to thickness information, wherein the thickness information and the wafer
The Low-K layer uniformitys of upper surface are corresponding, and correspondence is stored in controller.In the present embodiment mainly solve by
The uneven quality for causing the Low-K layers of laser beam processing wafer upper surface of Low-K layer thickness in wafer upper surface reduces,
For example, when using the Low-K layers of laser beam processing wafer upper surface with setting Energy distribution, due to different-thickness
The energy that place absorbs has difference, and then forms the failure layer of predetermined depth.Therefore, can add as needed in the present embodiment
The thickness that station is set adjusts the focus position of the laser beam so that is being added by the laser beam through changing focus position
When upper surface Low-K layers of work wafer, processing wafer can be accurately controlled so that the fuel factor of laser processing more equalizes,
Impact of the violent energy to Low-K materials is reduced, prevents Low-K layers of rupture so that peeling off.
Meanwhile the present embodiment the method can also be by examining according to the tranmitting frequency and Low-K material thickness of laser
Measurement information control optical path modulation device sexually revises the focus position of the laser beam in wafer upper surface performance period；Wherein, one
Aspect is to solve to change focusing by way of mobile concentrating element when the Low-K layer thickness of wafer upper surface is uneven
Point position causes mobile the problem of lagging to influence processing effect since concentrating element weight is larger, side described in the present embodiment
The first adjustment of the optical path modulation device is determined after the thickness information of method upper surface Low-K layers of wafer of acquisition and according to thickness information
Then parameter quickly and efficiently increases the first focusing in beam-expanding collimation element according to the first adjustment parameter and by light path adjuster
The light path of lens, to change the focal position of the first condenser lens.Due to the movement of focal position, the outgoing of the second condenser lens
Laser beam divergence changes, and therefore, then coordinates concentrating element that can further realize accurately controlling for focus point, and then enhance laser
The reliability of processing method.
Optionally, the thickness information for obtaining upper surface Low-K layers of wafer includes：
To one detection light beam of Low-K layers of wafer upper surface transmitting；
Obtain the reflected light of detection light beam；
The thickness information of Low-K layers of wafer upper surface is obtained according to the reflected light.
Specifically, method described in the present embodiment changes information by detecting wafer upper surface Low-K layers of the thickness,
Thickness change information is carried out in turn wafer upper surface Low-K layers of the surface evenness is calculated by algorithm
Change information, wherein the thickness changes that information is corresponding with the change information of surface evenness, and correspondence is stored in
In controller.On the one hand the present embodiment the method can be can be realized by a detection light beam and detection means to the wafer
The detection of upper surface Low-K layers of surface evenness；On the other hand, the present embodiment the method can be according to the wafer upper table
Face Low-K layers of surface evenness adjusts the focus position for processing Low-K layers of wafer upper surface in real time, improves described
The precision of laser processing and the uniformity effect of separation wafer.
Meanwhile the method is by calculating the reflected light and being obtained the wafer upper surface Low-K layers of correspondence
Thickness.Wherein, wafer upper surface Low-K layers of the thickness will have an impact the range of reflected light, angle, light intensity etc., because
This, can obtain wafer upper surface Low-K layers of the thickness by the reflected light.For example, when thickness increases, the reflection
The range of light increases, and laser energy loss increases.Therefore the light intensity energy value and angle measured by four-quadrant power meter is equal
It changes therewith, the thickness of Low-K materials can be extrapolated according to the offset of the difference of energy variation and angle.
Optionally, running parameter periodically-varied laser beam in wafer upper surface is pressed in control optical path modulation device
Focus position in further include：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
The second adjustment parameter of the optical path modulation device is determined according to real-time flute profile information, and according to second adjustment parameter control
The focus position of optical path modulation device adjustment laser beam in wafer upper surface processed.
Specifically, method described in the present embodiment is in order to further increase the yields of wafer processing, therefore,
Using laser beam, target location processes customizable shape groove structure, and then laser on the wafer upper surface Low-K layers
Processing wafer can reach better technological effect；By being detected in real time to Low-K layers of wafer upper surface etching in the present embodiment
It is formed by flute profile and obtains real-time flute profile information；Then second adjustment information is determined according to the real-time flute profile information,
In, the real-time flute profile information includes one or any group in depth of groove, recess width, groove top width and slot bottom width
It closes, wherein the real-time flute profile information is corresponding with second adjustment parameter, and correspondence is stored in controller, for example, working as
The groove top width subtracts slot bottom width and is more than preset value, then adjusts the position of focus point downwards and reinforce laser beam to slot bottom
Etching.
Meanwhile as shown in Figures 2 and 3, method described in the present embodiment can obtain wafer upper table simultaneously by mode arranged side by side
Face Low-K layers of thickness information and detection are formed by flute profile and obtain real-time flute profile to Low-K layers of wafer upper surface etching to be believed
Breath is then adjusted according to the first adjustment parameter and second adjustment parameter simultaneously when by mode arranged side by side；It can also obtain successively
The thickness information and detection for taking Low-K layers of wafer upper surface are formed by flute profile to Low-K layers of wafer upper surface etching and obtain
Real-time flute profile information.
The embodiment of the present invention also provides a kind of device of laser processing wafer, as shown in figure 9, described device includes：Laser
Device, for emitting laser beam；
Beam-expanding collimation element forms collimated light beam for expanding, collimating by the laser beam；
Optical path modulation device is set in beam-expanding collimation element and for being changed in wafer according to the tranmitting frequency of laser
The focus position of laser beam in surface, and formed along predetermined cuts road direction and customize focus distribution combination；
Concentrating element, for collimated light beam to be focused processing and forms after focus point transmitting to wafer upper surface Low-
K layers；
Platform is laser machined, for changing laser beam and predetermined cuts along the predetermined cuts road direction of wafer upper surface
Relative position between road on the predetermined cuts road to form groove；
Controller is connect with laser, optical path modulation device and laser processing unit respectively, for controlling and coordinating each first device
Work between part.
The device of laser processing wafer provided in an embodiment of the present invention in beam-expanding collimation element 4 by being arranged optical path modulation
Device 23, and light path and then the change that optical path modulation device 23 changes the laser beam launched through laser 1 are controlled by controller 15
The focus position of laser beam in wafer upper surface on being clamped in laser processing platform；And then it is formed and customizes focus point
Cloth combines, and therefore, device described in the present embodiment can cut thicker Low-K layers of wafer, and by wafer
The quick control of the focus position of laser beam in surface is realized to the multifocal stippled of entire Low-K layers or even inside wafer
The fuel factor of laser processing is equalized, reduces impact of the violent energy to Low-K materials by erosion, prevent Low-K layer to rupture so that
It peels off.Meanwhile in order to solve since concentrating element weight is larger in the present embodiment, focusing point is realized by mobile concentrating element
The change set can lead to the problem of mobile lag is to influence processing effect, therefore, can be rapidly and efficiently by light path adjuster 23
Ground increases the light path of the first condenser lens in beam-expanding collimation element, to change the focal position of the first condenser lens.Due to coke
The movement of point position, the second condenser lens shoot laser angle of divergence change, and therefore, then coordinate concentrating element that can further realize pair
Focus accurately controls, and then enhances the reliability of laser processing device.
Optionally, described device further includes：
First beam splitter, for laser beam to be divided into detection light beam and machining beams, wherein the detection light beam is used for
Transmitting is to Low-K layers of wafer upper surface；The machining beams emit into beam-expanding collimation element and form collimated light beam；
Detection means, the reflected light for obtaining detection light beam.
Optionally, described device further includes：
Second beam splitter for collimated light beam to be divided at least two beams, and injects detection components and concentrating element respectively；
Detection components obtain the real time laser information of collimated light beam.
In conclusion the present embodiment described device through optical fiber collimator 2, the polarizer 3, the first beam splitter 21 by laser light
Beam is divided into detection light beam and machining beams, wherein the detection light beam is for emitting to Low-K layers of wafer upper surface back reflection extremely
Then detection means 22 and the reflected light for obtaining detection light beam detect reflected light according to detection means by controller and are calculated simultaneously
It obtains the wafer upper surface Low-K layers of corresponding thickness, the optical path modulation device is finally calculated according to thickness information
The first adjustment parameter and the focus position for controlling optical path modulation device adjustment laser beam in wafer upper surface；The processing light
Beam, which emits, to carry out pre-processing to machining beams to beam-expanding collimation element 4 and optical path modulation device 23 and forms collimated light beam, then
Collimated light beam is divided at least two beams by the second beam splitter 5, and wherein beam of laser beamlet injects concentrating element 7, diaphragm 8 successively
And the wafer processing platform of clamping wafer, and laser beam is controlled by controller, the predetermined cuts road of wafer upper surface is carried out
Etching；Another beam laser beamlets inject third beam splitting crystal 18, lens subassembly 19, the CCD for constituting the first detection components successively
Device 20 or imaging device 20 are realized to the real-time flute profile information for detecting and obtaining in real time groove of groove, are set in controller
Computing unit second adjustment parameter is calculated according to real-time flute profile information, then according to second adjustment state modulator light path tune
The focus position of device adjustment laser beam in wafer upper surface processed.Simultaneously also beam splitting crystal 18 is injected by monitoring light source 17
It realizes the monitoring to flute profile and laser is avoided to inculcate the influence to CCD devices.
The device of the present embodiment can be used for executing the technical solution of above method embodiment, realization principle and technology
Effect is similar, and details are not described herein again.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, all answer by the change or replacement that can be readily occurred in
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of method of laser processing wafer, changes laser beam and makes a reservation for along the predetermined cuts road direction of wafer upper surface
Relative position between Cutting Road on the predetermined cuts road to form groove；It is characterised in that it includes：According to laser
Tranmitting frequency controls the focus position of optical path modulation device periodically-varied laser beam in wafer upper surface, and along described pre-
Determine Cutting Road direction and form customization focus distribution combination, wherein is described that optical path modulation is controlled according to the tranmitting frequency of laser
The focus position of device periodically-varied laser beam in wafer upper surface, and formed and customized along predetermined cuts road direction
Changing focus distribution combination includes：
Obtain the Low-K layer information of wafer upper surface or the flute profile information of groove；
It is determined according to the Low-K layers of information or the flute profile information of groove and customizes focus distribution combination；
The running parameter of optical path modulation device is determined according to the tranmitting frequency of the customization focus distribution combination and laser；
Control the focus position that optical path modulation device presses running parameter periodically-varied laser beam in wafer upper surface.
2. according to the method described in claim 1, it is characterized in that, the optical path modulation device changes the focus position range
It is 0-30 μm.
3. according to the method described in claim 2, it is characterized in that, changing within the scope of the focus position, according to being changed
Light path controller is correspondingly arranged at least two gears by the numerical value for becoming focus position.
4. according to the method described in claim 3, it is characterized in that, the running parameter includes the gear and shelves of optical path modulation device
Position adjusts frequency；Wherein,
It is to ensure that each gear adjusts the umber of pulse of the laser of fixed quantity respectively that the gear, which adjusts frequency,.
5. according to any methods of claim 1-4, which is characterized in that press the running parameter in control optical path modulation device
Periodically-varied further includes in the focus position of laser beam in wafer upper surface：
Obtain the thickness information of upper surface Low-K layers of wafer；
The first adjustment parameter of the optical path modulation device is determined according to thickness information, and according to the first adjustment state modulator light path tune
The focus position of device adjustment laser beam in wafer upper surface processed.
6. according to the method described in claim 5, it is characterized in that, the thickness information for obtaining upper surface Low-K layers of wafer
Including：
To one detection light beam of Low-K layers of wafer upper surface transmitting；
Obtain the reflected light of detection light beam；
The thickness information of Low-K layers of wafer upper surface is obtained according to the reflected light.
7. according to the method described in claim 5, it is characterized in that, periodical by the running parameter in control optical path modulation device
Change and further includes in the focus position of laser beam in wafer upper surface：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
The second adjustment parameter of the optical path modulation device is determined according to real-time flute profile information, and according to second adjustment state modulator light
The focus position of journey modulator adjustment laser beam in wafer upper surface.
8. a kind of device of laser processing wafer, which is characterized in that including：
Laser, for emitting laser beam；
Beam-expanding collimation element forms collimated light beam for expanding, collimating by the laser beam；
Optical path modulation device is set in beam-expanding collimation element and for being changed in wafer upper surface according to the tranmitting frequency of laser
The focus position of middle laser beam, and formed along predetermined cuts road direction and customize focus distribution combination；
Concentrating element, for collimated light beam to be focused processing and forms after focus point transmitting to Low-K layers of wafer upper surface；
Laser machine platform, for along the predetermined cuts road direction of wafer upper surface change laser beam and predetermined cuts road it
Between relative position to form groove on the predetermined cuts road；
Controller, respectively with laser, optical path modulation device and laser processing unit connect, for control and coordinate each component it
Between work.
9. device according to claim 8, which is characterized in that described device further includes：
First beam splitter, for laser beam to be divided into detection light beam and machining beams, wherein the detection light beam is for emitting
To Low-K layers of wafer upper surface；The machining beams emit into beam-expanding collimation element and form collimated light beam；
Detection means, the reflected light for obtaining detection light beam.
10. device according to claim 8 or claim 9, which is characterized in that described device further includes：
Second beam splitter for collimated light beam to be divided at least two beams, and injects detection components and concentrating element respectively；
Detection components obtain the real time laser information of collimated light beam.
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| CN112719573A (en) * | 2020-12-09 | 2021-04-30 | 成都宏明双新科技股份有限公司 | Method for efficiently improving laser etching efficiency of product |
| CN114054972A (en) * | 2020-12-17 | 2022-02-18 | 帝尔激光科技(无锡)有限公司 | Dynamic focusing laser cutting method and device |
| CN115026412A (en) * | 2021-02-25 | 2022-09-09 | 深圳市大族半导体装备科技有限公司 | Laser processing device and method for brittle product |
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