CN102896421A - LCOS (liquid crystal on silicon) laser micromachining system and laser micromachining method - Google Patents
LCOS (liquid crystal on silicon) laser micromachining system and laser micromachining method Download PDFInfo
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- CN102896421A CN102896421A CN2012102654152A CN201210265415A CN102896421A CN 102896421 A CN102896421 A CN 102896421A CN 2012102654152 A CN2012102654152 A CN 2012102654152A CN 201210265415 A CN201210265415 A CN 201210265415A CN 102896421 A CN102896421 A CN 102896421A
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Abstract
The invention relates to an LCOS (liquid crystal on silicon) laser micromachining system. The LCOS laser micromachining system comprises a laser generator (1) used for generating laser. A beam expander (2), an LCOS (3) and a beam reducer (1) are sequentially disposed on a path of laser emitted from the laser generator (1). The LCOS (3) is connected with a computer processor (4). Direction and strength of laser beams are changed by computer programs, use of mechanical moving parts is avoided, the LCOS laser micromachining system is highly flexible to use and stable in machining precision, and a beam control and processing technique for laser micromachining equipment is revolutionary.
Description
Technical field
The present invention relates to a kind of employing LCOS(Liquid Crystal on Silicon, liquid crystal on silicon or liquid crystal silicon processor) laser micro-machining system and processing method thereof, belong to the laser micro-machining technology field.
Background technology
In present laser micro-processing equipment, what laser beam control was adopted is galvanometer (galvanometric scanner) or Beam rotation device (helical) (or optically-active module) technology, they all are rendered as mechanical moving element in process equipment, the former respectively adopts deflection minute surface, a latter to adopt the rotation of motor-driven prism at two-dimensional direction, this two class formation all to environmental condition sensitivity, mechanical wear, often need to regulate, lack flexibility, volume and weight is large, thereby becomes a technical problem underlying in the little process equipment of high-precision laser.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, laser micro-machining system and the processing method thereof of a kind of easy to use and employing LCOS that machining accuracy is stable is provided.
The object of the present invention is achieved like this: a kind of laser micro-machining system that adopts LCOS, described system includes the laser generator for generation of laser, be disposed with beam expanding lens, LCOS, beam-shrinked mirror and focus lamp on the light path of the laser that described laser generator sends, described LCOS links to each other with a computer processor.
The present invention adopts the laser micro-machining system of LCOS, injects laser directive beam-shrinked mirror after the LCOS reflection of LCOS.
The present invention adopts the laser micro-machining system of LCOS, injects directive beam-shrinked mirror behind the laser penetration LCOS of LCOS.
The present invention adopts the processing method of the laser micro-machining system of LCOS, and described method includes following steps:
The laser that step 1, laser generator send is through inciding behind the beam expanding lens on the LCOS;
Step 2, the computer processor that links to each other with LCOS change the voltage on the liquid crystal layer that is carried in LCOS by computer program, thereby change the index distribution of liquid crystal layer, so that laser changes the direction of the light path of advancing;
Step 3, laser to be processed of the directive behind beam-shrinked mirror and focus lamp that penetrates LCOS.
The present invention adopts the processing method of the laser micro-machining system of LCOS, described laser generator sends a plurality of laser beams or beam of laser is divided into a plurality of laser beams, described LCOS is divided into a plurality of isolated areas, the zones of different on a plurality of laser beams difference directive LCOS.
Compared with prior art, the invention has the beneficial effects as follows:
The present invention adopts the work of computer program control LCoS, and can be fast and at random change the exit direction of laser beam, and reaction speed is fast and precisely; This technology does not have mechanical moving element, therefore without wearing and tearing and vibration, not affected by environment, use flexibility and the precision of whole system have greatly been improved, overcome the shortcoming that the frame for movement features such as galvanometer and optically-active module have, in the little process equipment of middle low power laser, can realize multiple beam work, beam direction can dynamic adjustments, and has the reconfigurabilities such as laser power adjusting, wave beam restructuring; This invention has overcome the use restriction of LCoS under higher laser power by adopting optics wave beam converter technique.
Description of drawings
Fig. 1 is that the present invention adopts the laser micro-machining system of LCOS to work in structural representation under the reflective-mode.
Fig. 2 is that the present invention adopts the laser micro-machining system of LCOS to work in structural representation under the transmission mode.
Wherein: laser generator 1, beam expanding lens 2, LCOS3, computer processor 4, beam-shrinked mirror 5, focus lamp 6, to be processed 7.
The specific embodiment
Referring to Fig. 1 and Fig. 2, the laser micro-machining system of a kind of LCOS of employing that the present invention relates to, described system includes the laser generator 1 for generation of laser, be disposed with beam expanding lens 2, LCOS3 and beam-shrinked mirror 5 on the light path of the laser that described laser generator 1 sends, the laser that penetrates beam-shrinked mirror 5 focuses on to be processed 7 of rear directive via focus lamp 6;
LCOS(Liquid Crystal on Silicon, liquid crystal on silicon), described LCOS mainly is made of silicon integrated circuit layer, liquid crystal layer and ITO electrode layer; The silicon integrated circuit layer of LCOS3 links to each other with computer processor 4, can realize control to LCOS3 by the program on the computer processor 4, and its control principle is:
Realize and being electrically connected of the silicon integrated circuit layer of LCOS3 by computer processor 4, can realize by the program on the computer processor 4 that voltage to the liquid crystal layer of LCOS3 distributes changes and controls, and then cause the change of the distribution of liquid crystal layer refractive index, liquid crystal layer is rendered as the array liquid crystal cells, wherein each unit can independently be controlled by program, because liquid crystal layer can be divided into each independently unit by electrode, its refractive index depends on the voltage that puts on the electrode, thereby can be easily by the control of the realization of the voltage on the control electrode to the refractive index in liquid crystal layer different units and zone by the program on the computer processor 4, namely form a kind of phase grating, the result, the laser of injecting LCOS3 can obtain the output opticpath that needs by changing the phase grating parameter, and that has realized light beam dynamically changes nyctitropic operation.Similarly, realize control to the refractive index value in liquid crystal layer different units and zone by the voltage of the program on the computer processor 4 on can control electrode, be changed through its intensity behind the phase grating so that inject the laser of LCOS3, thereby realize the adjusting of Laser Micro-Machining dynamic power.Laser beam direction control and laser beam power control can be by computer program the execution automatic operation is set.
Referring to Fig. 1, when adopting the laser micro-machining system of LCOS, the present invention works in reflective-mode lower time, the LCOS that adopts has a minute surface dielectric layer between liquid crystal layer and silicon integrated circuit layer, the laser of injecting LCOS3 is injected into the minute surface dielectric layer behind ITO electrode layer and liquid crystal layer, penetrate LCOS3 through liquid crystal layer and ITO electrode layer successively again after the reflection of minute surface dielectric layer;
Referring to Fig. 2, when adopting the laser micro-machining system of LCOS, the present invention works in transmission mode lower time, the silicon integrated circuit layer of the LCOS that adopts is the thin film silicon integrated circuit that is produced on the sapphire substrate, penetrates LCOS3 after the laser of injecting LCOS3 passes silicon integrated circuit layer, liquid crystal layer and ITO electrode layer;
The processing method of the laser micro-machining system of a kind of LCOS of employing that the present invention relates to includes following steps:
The laser that step 1, laser generator 1 send incides on the LCOS3 behind beam expanding lens 2;
Step 2, the computer processor 4 that links to each other with silicon integrated circuit layer on the LCOS3 are carried in voltage on the LCOS3 liquid crystal layer by routine change, thereby change the refractive index of liquid crystal layer, so that laser reaches the direction that changes the light path of advancing or the purpose that changes its intensity;
Step 3, laser to be processed 7 of the directive behind beam-shrinked mirror 5 and focus lamp 6 that penetrates LCOS3;
Add man-hour, can adopt a plurality of laser beams, LCOS3 is divided into a plurality of isolated areas, zones of different on the laser difference directive LCOS3 that different laser beams send, can independently control a plurality of zones on the LCOS3 easily by the program on the computer processor 4, thus control and the processing of realization multiple beam.
The control principle of LCOS is among the present invention:
By special computer program and electronic driver LCOS is driven, liquid crystal layer just produces and depends on and execute alive variations in refractive index, form certain phase grating; Phase grating can change the wavefront by its light beam, thereby the direction of light beam or its intensity are changed; Change the parameter that the voltage distribution that is applied to liquid crystal cells has namely changed phase grating by changing computer program, the direction of beamformer output or its intensity also change thereupon.
For a two-dimentional LCoS, output First order diffraction wave beam is at the angle θ of x-and y-direction
X/yThe liquid crystal array parameter S in the cycle by light wavelength lambda and a phase grating
X/y(liquid crystal cells dimension) and N
X/y(liquid crystal cells quantity) determines:
θ
x/y=λ／［（S
x/y）（N
x/y）］
After on-load voltage distributes, just form phase grating because liquid crystal layer only has, therefore can change S by the instruction in the reprogramming
X/y(liquid crystal cells dimension) and N
X/yThe numerical value of (liquid crystal cells quantity), thus the angle of the laser beam of LCoS output can change arbitrarily by program.
Usually the First order diffraction wave beam has the angle of high efficiency and ± 0.23 °, but through the deflection angle of its beamformer output of LCoS of optimal design can reach ± 7.4 °.And wave beam control efficiency η can be determined by digitlization number of phases M:
η（M）=［Sin（π/M）/（π/M）］
2
And the speed that this light beam changes is by the reaction speed decision of liquid crystal.Liquid crystal response speed can arrive the i.e. 100 μ s of 10kHz at present, faster than the speed of galvanometer and Beam rotation device.If laser beam focuses on the hole that diameter 100 μ m are processed in diameter 10 μ m processing, the operating rate that is determined by the control of LCOS laser beam so can reach 318 weeks of per second;
Simultaneously, in the present invention, use a two-dimentional LCoS computer processor, can realize that multiple beam controls simultaneously; Its method is that to divide LCoS liquid crystal working region according to different needs be a plurality of subregions, laser beam of each subarea processing.By this way, the intellectuality of the efficient of Laser Micro-Machining, flexibility and equipment can obtain to improve.
Laser power density control principle among the present invention:
Because the laser power that Laser Micro-Machining is used is in a watt level, therefore, must carries out first beam expander from the laser beam of laser instrument, and then be incident on the LCoS, thereby guarantee that LCoS works and can not damage under lower Ear Mucosa Treated by He Ne Laser Irradiation density.In order to process material, the large-caliber laser Shu Bixu of LCoS output reduces to be incident upon material surface after wave beam size and the focus lamp focusing through beam-shrinked mirror;
The LCoS-SLM product of using for high power laser take Hamamatsu X10468 series is as example, these series of products are for the LASER Light Source (365nm, 532nm, 800nm, 1030nm, 1064nm) of different wave length and the medium minute surface (350-420nm, 460-560nm, 750-850nm, 1000-1100nm) of different wave length, and LCoS laser work power density is looked the situation difference can be from 0.5W/cm
2To 2W/cm
2Therefore, the LCoS of a radius of clean-up 1.5cm can look the different 3.5W of being used for of situation to the laser power of 7W, and larger LCoS can be used for higher laser power.For example, be the 750nm-850nm scope with a Hamamatsu X10468 type 2-LCoS(medium minute surface) control and process Ti:Sapphire short-pulse laser (operation wavelength 800nm, pulse width 50fs, repetition rate 1kHz), when this LCoS diameter is 11mm, can be operated in 2.73W mean power, lower 10 hours of 54GW peak power and can damage.But this LCoS begins to melt at 3 hours rear center's position liquid crystal of same laser irradiation when diameter reduces to 9mm.
With power density (P
d), concern P between beam diameter (D) and the laser power P
d(W/cm
2)=(250/D
2) P, (D is that the laser beam diameter is take mm as unit) can calculate the parameter of needed optical beam transformation:
（D
1 2）（P
d1）=（D
2 2）（P
d2）
In the situation that the 2mm laser beam with 10W incident, requires Hamamatsu X10468 to have 2W/cm
2The LCoS of power density has the work area of diameter 35mm.The conversion ratio of wave beam transform optical system is 17.5;
The programme-control of LCoS among the present invention
With computer program simple beam or multi-beam laser are carried out quick and instantaneous laser direction and the change of laser power; Its principle is to write the voltage that computer program changes putting on the LCoS unit to distribute, thereby produces the index distribution of a liquid crystal region and obtain the effect of a phase grating.This grating parameter can be by computer program setting and change, and therefore for by this regional light beam, thereby the beam direction that is changed output because of its wavefront is changed.This change can be to be produced fast by computer program according to different process application needs.
Claims (5)
1. laser micro-machining system that adopts LCOS, it is characterized in that: described system includes the laser generator (1) for generation of laser, be disposed with beam expanding lens (2), LCOS(3 on the light path of the laser that described laser generator (1) sends), beam-shrinked mirror (5) and focus lamp (6), described LCOS(3) link to each other with a computer processor (4).
2. a kind of laser micro-machining system that adopts LCOS as claimed in claim 1 is characterized in that: inject LCOS(3) laser through LCOS(3) directive beam-shrinked mirror (5) after the reflection.
3. a kind of laser micro-machining system that adopts LCOS as claimed in claim 1 is characterized in that: inject LCOS(3) laser penetration LCOS(3) after directive beam-shrinked mirror (5).
4. a kind of processing method that adopts the laser micro-machining system of LCOS as claimed in claim 1, it is characterized in that: described method includes following steps:
The laser that step 1, laser generator (1) send is through inciding LCOS(3 behind the beam expanding lens (2)) on;
Step 2 and LCOS(3) computer processor (4) that links to each other change by computer program be carried in LCOS(3) liquid crystal layer on voltage, thereby change the index distribution of liquid crystal layer so that laser changes the direction of the light path of advancing or changes its intensity;
Step 3, penetrate LCOS(3) laser to be processed of directive (7) behind beam-shrinked mirror (5) and focus lamp (6).
5. a kind of processing method that adopts the laser micro-machining system of LCOS as claimed in claim 4, it is characterized in that: described laser generator (1) sends a plurality of laser beams or beam of laser is divided into a plurality of laser beams, described LCOS(3) be divided into a plurality of isolated areas, a plurality of laser beams are directive LCOS(3 respectively) on zones of different.
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| CN103418848A (en) * | 2013-07-31 | 2013-12-04 | 宁波工程学院 | Cutting technology with micromachining achieved with particulate knife |
| CN104439723A (en) * | 2014-11-10 | 2015-03-25 | 苏州大学 | Laser boring method and device |
| CN106027134A (en) * | 2016-05-20 | 2016-10-12 | 扬州大学 | Photonic microwave phased array transceiving system and method thereof |
| CN107214420A (en) * | 2017-07-14 | 2017-09-29 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
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| CN103418848B (en) * | 2013-07-31 | 2015-07-15 | 宁波工程学院 | Cutting technology with micromachining achieved with particulate knife |
| CN103418848A (en) * | 2013-07-31 | 2013-12-04 | 宁波工程学院 | Cutting technology with micromachining achieved with particulate knife |
| CN104439723A (en) * | 2014-11-10 | 2015-03-25 | 苏州大学 | Laser boring method and device |
| CN104439723B (en) * | 2014-11-10 | 2016-03-09 | 苏州大学 | A kind of laser boring method and device thereof |
| CN106027134A (en) * | 2016-05-20 | 2016-10-12 | 扬州大学 | Photonic microwave phased array transceiving system and method thereof |
| CN106027134B (en) * | 2016-05-20 | 2019-09-20 | 扬州大学 | A kind of photon phased array of microwaves receive-transmit system and its method |
| CN107335923A (en) * | 2017-06-09 | 2017-11-10 | 中国科学院上海光学精密机械研究所 | Femtosecond laser space-time focuses on metal surface high throughput processes apparatus and method |
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| CN107378258A (en) * | 2017-07-14 | 2017-11-24 | 中国科学院微电子研究所 | Method and system for processing wafer by laser |
| CN107239088B (en) * | 2017-07-14 | 2018-10-09 | 中国科学院微电子研究所 | Control method and system for laser processing of wafer |
| CN107214418B (en) * | 2017-07-14 | 2018-10-23 | 中国科学院微电子研究所 | Method and device for processing wafer by laser |
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| CN107561016B (en) * | 2017-08-17 | 2020-06-09 | 华北电力大学 | System for detecting gas concentration by laser |
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