CN107234343B - A kind of method and device of laser processing wafer - Google Patents
A kind of method and device of laser processing wafer Download PDFInfo
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- CN107234343B CN107234343B CN201710574488.2A CN201710574488A CN107234343B CN 107234343 B CN107234343 B CN 107234343B CN 201710574488 A CN201710574488 A CN 201710574488A CN 107234343 B CN107234343 B CN 107234343B
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- flute profile
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
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Abstract
The present invention provides a kind of method and device of laser processing wafer, the method includes：Being arranged after laser beam is processed on the Low K layers of wafer upper surface needs the default flute profile information to be formed；The topological pattern distribution that need to be had according to default flute profile information matches laser beam；It is split the laser facula for being formed after processing, Shape correction and focusing and there is the topological pattern distribution successively to laser beam according to the topological pattern distribution, to be performed etching to Low K layers of wafer upper surface and form default flute profile.The present invention can be determined according to subsequent processing technology demand to be needed the flute profile to be formed and is formed to preset flute profile information after laser beam is processed on the Low K layers of wafer upper surface, then above-mentioned default flute profile information is arranged by setting member, and best topological pattern is matched to by the default flute profile information via controller and is distributed, so that, heat affected area smaller and homogeneity higher more uniform in the groove that Low K layers of wafer upper surface etching is formed.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of method and devices of laser processing wafer.
Background technology
In recent years, with the continuous reduction and the continuous improvement of chip integration of feature sizes of semiconductor devices, metal
The resistance of parasitic capacitance and plain conductor between interconnection line, between multilayer wiring increased dramatically, and result in RC retardation ratio, power consumption
A series of problems, such as increase, limits the development of high-velocity electrons component.After device feature size is less than 90nm, wafer is necessary
Traditional SiO2 layers (K=3.9~4.2), common Low-K materials is replaced to have Dow Corning Corporation using advanced low-k materials
FOx and porous SiLK materials, the low K thin-film materials of carbonado series of Applied Materials, Novellus System
FCN+ organic layers of CORAL, the CDO of Intel and NEC Corporation etc..
The use of Low-K materials also brings some problems.Whether mechanical strength or adhesiveness, Low-K materials are all
It is nothing like SiO2, this proposes challenge to scribing process.Most commonly seen problem is, due to lower machine in scribing processes
Tool intensity and adhesion strength so that Low-K materials stick in saw blade, and this not only lowers the efficiency of scribing, while also bringing
Insulating layer is stripped and generates clast from layer on surface of metal and be diffused into other functional areas etc. seriously affect yield after
Fruit.Laser processing has many advantages, such as that non-contact, precision is high, suitable material range is wide, machining path is flexibly controllable, is for crystalline substance
Circle scribing and the robust solution to solve the above problems.It is reported that the wafer that supplier provides has been strictly required in Apple Inc.
The technique of laser cutting Low-K materials must be used (i.e.：Laser Grooving techniques), this makes Feng Ce factories to such technique
The demand of technology and equipment significantly increases.Strictly speaking, laser beam not instead of " cutting " Low-K materials rely on laser energy
The high temperature melt metal layer and interlayer dielectric layer of generation, such laser cutting generate tool stress very little, because without occurring to divide
The problems such as layer or stripping.In addition, Hamamatsu Photonics K. K also invented the technology of " stealth cutting ", this technology is to utilize
There is the laser of transmittance wavelength to focus on inside wafer wafer and form modification layer, then makes wafer along modification layer by external force
It splits for individual chip.Using stealthy cutting technique, chip functions area can be made to avoid clast is generated in scribing processes
At pollution, but when being covered with separation layer or other functional layers above wafer, this will influence the transmission of laser, to influence
Modify the formation of layer.Therefore, when using stealthy cutting, the materials such as upper surface Low-K layers of laser ablation wafer should be also used first
Material.
But it can not customize according to the demand of subsequent machining technology and be formed by slot on Low-K layers of wafer upper surface
Shape structure, and then the problem of the process requirements of influence subsequent machining technology.
Invention content
The method and device and user equipment of laser processing wafer provided by the invention, can be according to subsequent processing technology
Demand determines to be needed to form flute profile information and be formed to preset flute profile letter after laser beam need to be processed on the Low-K layers of wafer upper surface
Breath, is then arranged above-mentioned default flute profile information, and be matched to most by the default flute profile information via controller by setting member
Good topological pattern distribution, so that more uniform in the groove that Low-K layers of wafer upper surface etching is formed, heat affected area is more
Small and homogeneity higher, and then improve the laser processing effect in wafer upper surface.
In a first aspect, the present invention provides a kind of method of laser processing wafer, including：
Being arranged after laser beam is processed on the Low-K layers of wafer upper surface needs the default flute profile information to be formed；
The topological pattern distribution that need to be had according to default flute profile information matches laser beam；
It is split shape after processing, Shape correction and focusing successively to laser beam according to the topological pattern distribution
At the laser facula with the topological pattern distribution, to be performed etching to Low-K layers of wafer upper surface and form default slot
Shape.
Optionally, the default flute profile information include bathtub construction, the width of flute profile and flute profile depth in it is a kind of or
Arbitrary combination.
Optionally, the basis presets the topological pattern distribution that flute profile information matches laser beam need to have, including：
It obtains bathtub construction and determines the distribution of shapes of the laser facula according to bathtub construction；
It obtains the width of flute profile and determines the size distribution of laser facula according to the width of flute profile；
Topological pattern distribution is determined according to the distribution of shapes of the laser facula, size distribution.
Optionally, the method further includes：
The depth and topological pattern for obtaining the flute profile are distributed；
Intensity and the focal position of the laser beam are determined according to the depth of the flute profile and topological pattern distribution.
Optionally, after being performed etching to Low-K layers of wafer upper surface, further include：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
Obtain the topological pattern distribution and as the first topological pattern distribution；
The adjusting parameter of topological pattern distribution is determined according to real-time flute profile information and the first topological pattern distribution；
The topological pattern distribution of laser beam is adjusted to form the second topological pattern distribution according to the adjusting parameter,
And the laser beam being distributed with the second pattern performs etching wafer upper surface for Low-K layers.
Second aspect, the present invention provide a kind of device of laser processing wafer, including：
Setting member needs the default flute profile to be formed for being arranged after laser beam is processed on the Low-K layers of wafer upper surface
Information；
Controller, the topological pattern distribution for that need to have according to flute profile information matches laser beam is preset；
Phase control-type liquid crystal on silicon, for being split processing and whole successively to laser beam according to the topological pattern distribution
Shape handles and forms the laser facula with the topological pattern distribution；
Focusing element array, for emitting the laser facula to Low-K layers of wafer upper surface and to wafer upper surface
Low-K layers perform etching and form default flute profile.
Optionally, the controller includes：
First computing unit, for obtaining bathtub construction and determining that the shape of the laser facula is divided according to bathtub construction
Cloth；
Second computing unit, width for obtaining flute profile and the size point that laser facula is determined according to the width of flute profile
Cloth；
First determination unit, for determining topological pattern distribution according to distribution of shapes, the size distribution of the laser facula.
Optionally, the controller further includes：
First acquisition unit, depth and topological pattern for obtaining the flute profile are distributed；
Second determination unit, for determining the strong of the laser beam according to the depth and topological pattern distribution of the flute profile
Degree and focal position.
Optionally, described device further includes：
Detection components are believed for detecting to be formed by flute profile to Low-K layers of wafer upper surface etching and obtain real-time flute profile
Breath；
Second acquisition unit is set in controller and for obtaining the topological pattern distribution and as the first topological diagram
Case is distributed；
Third determination unit is set in controller and for true according to real-time flute profile information and the first topological pattern distribution
The adjusting parameter of fixed topology pattern distribution.
Optionally, the detection components include：
Beam splitting crystal, for laser beam beam splitting to be formed first laser beamlet and second laser beamlet, and respectively
First laser beamlet is emitted to the phase control-type liquid crystal on silicon, second laser beamlet emits to lens subassembly；
Monitor light source, for Low-K layers of wafer upper surface it is etched after be formed by flute profile and be monitored；
CCD devices, for obtaining real-time flute profile information and being imaged；
Lens subassembly is used for second laser beamlet focus emission to CCD devices.
The method and device of laser processing wafer provided in an embodiment of the present invention solves can not be according to subsequent machining technology
Demand, customize the problem of being formed by bathtub construction on Low-K layers of wafer upper surface, the present embodiment the method is main
It is that operator first passes through subsequent processing technology demand and determines and needs shape after laser beam need to be processed on the Low-K layers of wafer upper surface
At flute profile and formed and preset flute profile information, above-mentioned default flute profile information is then arranged by setting member, and by described default
Flute profile information via controller is matched to best topological pattern distribution, and then be distributed for the laser beam of scribing by guarantee
Uniformity so that the groove that etching is formed Low-K layers of wafer upper surface is more uniform, heat affected area smaller and homogeneity is more
Height, and then improve the laser processing effect in wafer upper surface.
Description of the drawings
Fig. 1 is the flow chart for the method that one embodiment of the invention laser machines wafer；
Fig. 2 is the flow chart for the method that another embodiment of the present invention laser machines wafer；
Fig. 3 is one embodiment of the invention topology pattern distribution schematic diagram；
Fig. 4 is another embodiment of the present invention topology pattern distribution schematic diagram；
Fig. 5 is another embodiment of the present invention topology pattern distribution schematic diagram；
Fig. 6 is another embodiment of the present invention topology pattern distribution schematic diagram；
Fig. 7 is another embodiment of the present invention topology pattern distribution schematic diagram；
Fig. 8 is another embodiment of the present invention topology pattern distribution schematic diagram；
Fig. 9 is another embodiment of the present invention topology pattern distribution schematic diagram；
Figure 10 is the structural schematic diagram for the device that one embodiment of the invention laser machines wafer；
Figure 11 is the structural schematic diagram for the device that another embodiment of the present invention laser machines wafer.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of method of laser processing wafer, as shown in Figure 1, the method includes：
S11, setting laser beam need the default flute profile information to be formed after being processed on the Low-K layers of wafer upper surface；
S12, the topological pattern distribution that need to be had according to default flute profile information matches laser beam；
S13, processing, Shape correction and focusing are split laser beam according to the topological pattern distribution successively
Being formed afterwards has the laser facula of the topological pattern distribution, performs etching and is formed pre- to Low-K layers to wafer upper surface
If flute profile.
It is provided in an embodiment of the present invention laser processing wafer method solve can not according to the demand of subsequent machining technology,
It customizes the problem of being formed by bathtub construction on Low-K layer of wafer upper surface, the present embodiment the method is mainly operation
Person first passes through subsequent processing technology demand and determines needs the slot to be formed after laser beam need to be processed on the Low-K layers of wafer upper surface
Shape simultaneously forms default flute profile information, above-mentioned default flute profile information then is arranged by setting member, and believed by the default flute profile
Breath via controller is matched to best topological pattern distribution, for example, the bathtub construction described in the subsequent machining technology is nearly integrally
When " Qian " type, laser machined using topology group distribution as described in Figure 3；And then the laser beam by guarantee for scribing
The uniformity of distribution so that the groove that etching is formed Low-K layers of wafer upper surface is more uniform, heat affected area smaller and uniform
Property higher, and then improve wafer upper surface laser processing effect.
Meanwhile after laser beam is matched to best topological pattern distribution by the method according to default flute profile information, also
Need to according to the topological pattern distribution to the laser beam that laser emit be split formation multiple laser beamlet after processing,
Then Shape correction, focusing are carried out respectively to the laser beamlets after beam splitting, and then being formed, there is the topology pattern to be distributed
Laser facula, finally by the relative position realization changed between Low-K layer of the laser facula and wafer upper surface to wafer
Upper surface Low-K layers carries out laser processing effect and forms groove on Low-K layers of wafer upper surface, and then avoiding Low-K
Under the premise of the peeling of layer in process, reach efficiently removal upper surface Low-K layers of effect of wafer, and improve the groove
The uniformity of flatness and separation wafer, and then improve the performance of wafer.
Optionally, as shown in Fig. 2, the default flute profile information includes bathtub construction, the depth of the width of flute profile and flute profile
In one or any combination.
Optionally, the basis presets the topological pattern distribution that flute profile information matches laser beam need to have, including：
It obtains bathtub construction and determines the distribution of shapes of the laser facula according to bathtub construction；
It obtains the width of flute profile and determines the size distribution of laser facula according to the width of flute profile；
Topological pattern distribution is determined according to the distribution of shapes of the laser facula, size distribution.
Specifically, obtaining the width of flute profile described in the present embodiment and determining the size of laser facula according to the width of flute profile
Distribution, including：
Obtain the width of flute profile；
Receive the distribution of shapes of laser facula and corresponding heat affected area information；
It is calculated by algorithm according to the width of flute profile, the distribution of shapes of laser facula and corresponding heat affected area information
The size distribution of laser facula.
Wherein, the heat affected area information further ensures as the coefficient in formula by having in the algorithm
It is more accurate that the laser beam processing of the size distribution of the laser facula is formed by bathtub construction.
Meanwhile default flute profile information is corresponding with the topological pattern distribution in the method, correspondence is stored in
In controller.For example, as shown in figure 3, in order to be two "U" type grooves in Low-K layers of the wafer upper surface bathtub construction etched
It is respectively distributed to Cutting Road both sides, wherein laser beam is divided into two and is respectively acting on the marginal position in predetermined cuts road
The Low-K materials in semiconductor substrate are removed with center, and retain the region between them, can then pass through machinery
Processing method or laser processing method remove remaining Low-K materials.The Low-K materials at edge can be removed using the bathtub construction
Expect and limit removal subject area, when in subsequent processing remove Low-K materials when, can prevent remove subject area it
Low-K materials in outer region are removed, and edge accurately and is clearly handled, and is improved while improving processing efficiency
Manufacturing characteristics, moreover it is possible to effectively avoid Low-K layers of peeling in process.Therefore, it can be used in the present embodiment such as figure three
Topological pattern distribution shown in left side, forms after the laser beam processing through being distributed with the topology pattern such as A-A sectional views institute
The bathtub construction shown, wherein the distribution of topology group is made of two elliptical shaped laser spots for being respectively distributed to Cutting Road both sides,
Focusing element array wherein used is circular flat spot shaping element, and focusing element array forms for plano-convex cylindrical lens array.
The two beam directional light shapings at predetermined cuts line both ends can be will act at by focusing element array becomes stripe shape, the shape
Compared with circular light spot, etch areas increases.To increase processing efficiency.Pass through the adjusting of the position to lens, Ke Yishi
Now the width to linearity configuration relative to predetermined cuts road vertical direction is changed, to obtain the processing effect of different groove widths
Fruit.And then be conducive to remove remaining Low-K materials by mechanical processing method or laser processing method in next step.By this
Method removes the Low-K materials at edge and limits removal subject area, when removing Low-K materials in subsequent processing,
The Low-K materials in the region except subject area can be prevented from removing to be removed.Or using topology shown in three right side of figure
Pattern is distributed, and the bathtub construction as shown in A-A sectional views is formed after the laser beam processing through being distributed with the topology pattern,
In, the distribution of topology group is made of two that are respectively distributed to Cutting Road both sides round laser faculas, passes through beam splitting element or phase
A branch of incident laser beam is divided into two bundles laser beamlets by control type liquid crystal on silicon, using focusing element array by two beam laser
Beamlet is respectively acting on scribing runway both sides.
As shown in Figure 4 and Figure 5, it is respectively in order to which the bathtub construction etched on the Low-K layers of wafer upper surface is both sides
" Qian " type groove, centre are "U" type groove, then need laser beam one dividing into three and be respectively acting on the side in predetermined cuts road
Edge position and center remove the Low-K layers in semiconductor substrate, and retain the region between them, can then pass through
Mechanical processing method or laser processing method remove remaining Low-K materials.The bathtub construction can remove the Low-K materials at edge
Expect and limit removal subject area, while the hot spot of a branch of smaller shape can ensure predetermined cuts road edge Low-K materials
In the case of material removal, certain etching effect is realized to intermediate a part of region.It is therefore possible in subsequent blade fluting
Greatly reduce resistance of the residue Low-K materials to blade, and the raceway groove of the 0 order diffraction photoengraving positioned at bosom in processing
The movement locus that will can effectively hold onto blade, to improve blade running precision.Twice positioned at predetermined cuts road edge
The accurate and clear processing at Cutting Road edge may be implemented in rectangular flat-top laser beamlets, is improved while improving processing efficiency
Manufacturing characteristics, moreover it is possible to effectively avoid Low-K layers of peeling in process.Therefore, the topological diagram as shown in the left sides Fig. 4
Case is distributed, and the bathtub construction as shown in B-B sectional views is formed after the laser beam processing through being distributed with the topology pattern.This reality
It is circular flat spot shaping element to apply example and can will act at the shaping element that intermediate laser beamlet uses, and coordinates plano-convex column
Face mirror realizes the linearization process to laser facula；Acting on shaping element used in the laser beamlets on predetermined cuts road both sides is
Square flat-top shaping element, and coordinate convex lens that can realize rectangular laser processing effect on the both sides in predetermined cuts road.
The flat-top hot spot of intermediate ellipse can improve work to greatest extent while realization is removed Low-K materials
Efficiency.It is the width that can determine linear flat-top hot spot according to spot length and plano-convex cylindrical lens focal length, to realize to predetermined
Cutting Road edge accurately and is clearly handled, and improves manufacturing characteristics while improving processing efficiency, moreover it is possible to effectively keep away
Exempt from the peelings of Low-K in process.
Even if when removing the Low-K materials still retained after the Low-K materials for removing edge, due to from Low-K materials
Material is applied to the physical resistance of blade, it is impossible to ensure the predetermined movement speed of blade.Therefore, in another embodiment of the present invention
In, after using the sub- laser of two segmentations to the Low-K materials removal on the predetermined cuts road edges T both sides, while introducing diffraction
0 grade of laser of light splitting.The energy intensity of the sub- laser of three beams is close consistent, therefore can ensure predetermined cuts road edge Low-K
In the case that material removes, the effect for being equal to etching edge is realized to intermediate a part of region.It is therefore possible to subsequent
Greatly reduce resistance of the residue Low-K materials to blade in blade slot treatment, and positioned at the 0 order diffraction photoetching in bosom
The raceway groove of erosion will can effectively hold onto the movement locus of blade, to improve blade running precision.
Alternatively, topological pattern distribution shown on the right side of Fig. 4, after the laser beam processing through being distributed with the topology pattern
Form the bathtub construction as shown in B-B sectional views.The shaping element that intermediate laser beamlets use is acted in the present embodiment
For circular flat spot shaping element, and planoconvex spotlight is coordinated to realize the focusing to laser facula.
Further, topological pattern as shown in Figure 5 distribution, after the laser beam processing through being distributed with the topology pattern
Form the bathtub construction as shown in C-C sectional views.When it is "U" type groove that " Qian " type groove of both sides, which is more than centre, the side
Method can be used intermediate laser beamlet spot size be less than Cutting Road both sides laser beamlets spot size size.Three beams
The hot spot of laser beamlets realizes the focusing on wafer with the concentrating element group of three planoconvex spotlight compositions.It is long according to hot spot
Degree and planoconvex spotlight focal length are that can determine the width of linear flat-top hot spot, to realizing to predetermined cuts road edge by accurate and
It clearly handles, manufacturing characteristics is improved while improving processing efficiency, moreover it is possible to effectively avoid Low-K in process
Peeling.Smaller intermediate beam be effectively guaranteed Cutting Road both sides are efficiently removed while, can be with centering
Between a part of region certain etching effect such as realize.It is surplus it is therefore possible to greatly reduce in subsequent blade slot treatment
Remaining Low-K materials are to the resistance of blade, and the raceway groove for penetrating photoengraving positioned at bosom will can effectively hold onto blade
Movement locus, to improve blade running precision.
As shown in fig. 6, laser beam in order to Low-K layers of the wafer upper surface bathtub construction etched be global approximation
" Qian " type groove, even and if when remove remove edge Low-K materials after still retain Low-K materials when, due to from
Low-K materials are applied to the physical resistance of blade, it is impossible to ensure the predetermined movement speed of blade.Therefore, in the present embodiment
After the laser beamlets divided using two are to the Low-K materials removal on predetermined cuts road edge both sides, while introducing diffraction point
0 grade of laser of light.The energy intensity of three beams of laser beamlet is close consistent, therefore can ensure predetermined cuts road edge Low-
In the case that K materials remove, the effect for being equal to etching edge is realized to intermediate a part of region.Final acquisition one is similar to
" Qian " the type bathtub construction all etched.Since groove top differs smaller with slot bottom, when then passing through mechanical processing method or laser
When processing method removes remaining Low-K materials, good stress release can effectively avoid blade from producing chip crystals
Raw stress damage, very high product reliability.Therefore, the topological pattern distribution as shown in the upper left sides Fig. 6, through having the topological diagram
The bathtub construction as shown in D-D sectional views is formed after the laser beam processing of case distribution.The shaping element used in the present embodiment
Array is the rectangular shaping elements of 3*3 customized, and the rectangular flat-top hot spot processing of array for coordinating convex lens that 3*3 may be implemented is imitated
Fruit.Rectangular flat-top hot spot can effectively control edge definition, therefore compared to circular light spot, can obtain significantly more efficient
Machining accuracy, and it is not damaged to wafer effective coverage.Rectangular edge can also preferably control the diffusion of fuel factor, will process
Slot controls within predetermined cuts road.Rectangular array processing effect can preferably cover large-scale machining area, that is, increase
The processing efficiency added.Noenergy region among different rectangular sub-light spots also can be certain alleviation fuel factor influence.Pass through
After the mode of this multiple beam overlapping, it is ensured that Energy distribution is relatively uniform at the top of hot spot cluster, therefore can effectively reduce
The Low-K material ablation phenomenons that fuel factor generates.Due to the overlapping of multiple beam so that the beam energy distribution of scribing is more equal
Even, trench bottom is more flat, and heat affected area homogeneity is higher, and corresponding chipping, micropore, burr phenomenon can also reduce therewith.
Simultaneously as the uneven thickness of Low-K layers of wafer upper surface, therefore only with the topological pattern of such as upper left sides Fig. 6
Distribution is laser machined, and is unable to reach the expected bathtub construction for being similar to " Qian " type, therefore according to Low-K layers of wafer upper surface
Thickness distribution, and then adjust the topological pattern distribution.For example, when thicker than both sides in the middle part of Cutting Road, then use as Fig. 6 is right
Topological pattern distribution shown in upside, forms after the laser beam processing through being distributed with the topology pattern such as D-D sectional views institute
The bathtub construction shown.Wherein, shaping element array is using the rectangular shaping element of " work " type customized, and coordinates convex lens can be with
Realize the rectangular flat-top hot spot processing effect of " work " type array.Effectively to control the diffusion in array hot spot heat-affected zone, will swash
What light customized is beamed into the combination of " work " type array hot spot.So that the processing fuel factor at predetermined cuts road edge is more to processing
Diffusion, that is, remain processing efficiency, and be effectively controlled damage of product situation among slot.Retain in the intermediate region of Cutting Road
The processing effect of a branch of sub-light spot such as can realize intermediate a part of region at certain etching effect.It is therefore possible to
Greatly reduce resistance of the residue Low-K materials to blade in subsequent blade slot treatment, and light is penetrated positioned at bosom
The raceway groove of etching will can effectively hold onto the movement locus of blade, to improve blade running precision.Last one of lasertron
The combination of light beam, moreover it is possible to effectively the etching flute profile of front be repaired, the residue of slot bottom is removed.
When thinner than both sides in the middle part of Cutting Road, then using the topological pattern distribution as shown in downside in Fig. 6, through having this to open up
The bathtub construction as shown in D-D sectional views is formed after flutterring the laser beam processing of pattern distribution.Wherein, determine when shaping element array
The rectangular shaping element of " H " type of inhibition and generation, and coordinate convex lens that the rectangular flat-top hot spot processing effect of " H " type array may be implemented.By
Larger heat affecting effect is generated to Low-K materials in laser, and the effect of expanding with heat and contract with cold of material may be caused to make processing essence
Degree reduces, and the diffusion of fuel factor is also possible to the effective coverage of damage wafer, to reduce product qualification rate.Laser is determined
Inhibition and generation is beamed into the combination of " H " type array hot spot.So that the processing fuel factor at predetermined cuts road edge is more into processing groove
Between spread, that is, remain processing efficiency, and be effectively controlled damage of product situation.Also, it is protected in the intermediate region of Cutting Road
The processing effect of a branch of sub-light spot has been stayed, it can be to certain etching effects such as intermediate a part of region realizations.It is therefore possible to
Greatly reduce resistance of the residue Low-K materials to blade, and penetrating positioned at bosom in subsequent blade slot treatment
The raceway groove of photoengraving will can effectively hold onto the movement locus of blade, to improve blade running precision.
Therefore, the method further includes：
Obtain the thickness information of upper surface Low-K layers of wafer；
The topological pattern distribution that need to be had according to thickness information and default flute profile information matches laser beam.
As shown in fig. 7, in order to which the bathtub construction etched on the Low-K layers of wafer upper surface is the three uniform U-typeds of row
Groove, therefore, the topological pattern distribution as shown in the upsides Fig. 7, shape after the laser beam processing through being distributed with the topology pattern
At the bathtub construction as shown in E-E sectional views.What the three beams of laser hot spot that the present embodiment uses was formed with three planoconvex spotlights
Focusing element array realizes the focusing on wafer.Also, it can determine line also according to spot length and planoconvex spotlight focal length
The width of shape flat-top hot spot accurately and is clearly handled predetermined cuts road edge to realize.
Meanwhile in order to Low-K layers of the wafer upper surface bathtub construction etched be global approximation " Qian " type groove；Cause
This, the present embodiment can also be by using female laser beam comprising entire Cutting Road to the Low-K materials in entire predetermined cuts road
Material is removed, and is then cut to the remaining material in Cutting Road both sides using the small-sized laser beamlets of twice.It can not only
The bathtub construction close to " Qian " type is obtained, remaining Low- is removed when then passing through mechanical processing method or laser processing method
When K materials, good stress release can effectively avoid the stress damage that blade generates chip crystals, and very high product can
By property.And the subsequent small-sized Gaussian beam of twice can also clean up after first of female light beam is cut and condense upon both sides in slot again
Surplus materials, to realize that efficient flute profile obtains result.
Alternatively, topological pattern distribution shown on the upside of Fig. 8, after the laser beam processing through being distributed with the topology pattern
Form the bathtub construction as shown in F-F sectional views.Wherein, two beam laser are divided into using laser beam.It is a branch of before wherein to swash
Photon beam energy is far longer than subsequent laser beamlets.Preceding a branch of laser beamlets are used for laser slotting, then a branch of to swash
Photon light beam occupies the 20-30% of total laser, is used to the clast of removal slot bottom, optimizes bathtub construction.Such beam splitting effect
Further improvement can be realized to flute profile, while ensureing processing efficiency to greatest extent to avoid subsequent machinery
When cutting, in fact it could happen that remaining Low-K materials be adhered on blade, and be splashed to the effective coverage of wafer, affect production
Product yield.
Again alternatively, topological pattern shown in upside is distributed as shown in Figure 9, the laser beam through being distributed with the topology pattern
The bathtub construction as shown in G-G sectional views is formed after processing.Wherein, it is whole to be square flat-top for shaping element used in laser beamlets
Shape element, and coordinate planoconvex spotlight that can realize rectangular laser processing effect on the both sides in predetermined cuts road.Compare and circle
Hot spot can obtain significantly more efficient machining accuracy, and not be damaged to wafer effective coverage.It rectangular edge can also be better
The diffusion for controlling fuel factor, by processing groove control within predetermined cuts road.And subsequent circular flat hot spot be equally then for
After removal laser processing, remains in the Low-K materials of slot bottom, advanced optimize bathtub construction.
Optionally, the method further includes：
The depth and topological pattern for obtaining the flute profile are distributed；
Intensity and the focal position of the laser beam are determined according to the depth of the flute profile and topological pattern distribution.
Specifically, due in laser processing procedure there is heat affected area, in order to more preferably optimize flute profile knot
Structure further determines intensity and the focal position of the laser beam according to the depth of the flute profile and topological pattern distribution.
Optionally, after being performed etching to Low-K layers of wafer upper surface, further include：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
Obtain the topological pattern distribution and as the first topological pattern distribution；
The adjusting parameter of topological pattern distribution is determined according to real-time flute profile information and the first topological pattern distribution；
The topological pattern distribution of laser beam is adjusted to form the second topological pattern distribution according to the adjusting parameter,
And the laser beam being distributed with the second pattern performs etching wafer upper surface for Low-K layers.
For example, when the first topological pattern distribution and the second topological pattern distribution only adjust the shape of laser facula, it can be only
Phase control-type liquid crystal on silicon need to be controlled to be modulated laser beam and form the second topological pattern distribution；When the first topological pattern point
Laser facula and laser beamlets array are both needed to adjust between cloth and the second topological pattern distribution, then by controlling phase control-type silicon
Base fluid crystalline substance and focusing element array 7 are modulated laser beam.
The embodiment of the present invention also provides a kind of device of laser processing wafer, and as shown in Figure 10, described device includes：
Setting member needs the default flute profile to be formed for being arranged after laser beam is processed on the Low-K layers of wafer upper surface
Information；
Controller 15, the topological pattern distribution for that need to have according to flute profile information matches laser beam is preset；
Phase control-type liquid crystal on silicon 6, for according to the topological pattern distribution laser beam is split successively processing and
Shape correction simultaneously forms the laser facula with the topological pattern distribution；
Focusing element array 7, for emitting the laser facula to Low-K layers of wafer upper surface and to wafer upper surface
Low-K layers perform etching and form default flute profile.
The device of laser processing wafer provided in an embodiment of the present invention is arranged above-mentioned default flute profile by setting member and believes
Breath, and best topological pattern is matched to by the default flute profile information via controller and is distributed, it also needs according to the topological pattern
Be distributed the laser beam that laser 1 emit after phase control-type liquid crystal on silicon 6 is split processing formation multiple laser beamlet,
Then Shape correction is carried out respectively to the laser beamlets after beam splitting；Finally laser beamlets are carried out by focusing element array 7
Focusing, and then the laser facula with topology pattern distribution is formed, finally by the change laser facula and wafer
Relative position between ow-K layers of Surface L is realized carries out laser processing effect and in wafer upper table for Low-K layers to wafer upper surface
Groove, and then the uniformity being distributed for the laser beam of scribing by guarantee are formed on face Low-K layers so that in wafer upper table
The groove that face Low-K layers of etching is formed is more uniform, heat affected area smaller and homogeneity higher, and then improves in wafer upper surface
Laser processing effect.
Optionally, the controller includes：
First computing unit, for obtaining bathtub construction and determining that the shape of the laser facula is divided according to bathtub construction
Cloth；
Second computing unit, width for obtaining flute profile and the size point that laser facula is determined according to the width of flute profile
Cloth；
First determination unit, for determining topological pattern distribution according to distribution of shapes, the size distribution of the laser facula.
Optionally, the controller further includes：
First acquisition unit, depth and topological pattern for obtaining the flute profile are distributed；
Second determination unit, for determining the strong of the laser beam according to the depth and topological pattern distribution of the flute profile
Degree and focal position.
Optionally, described device further includes：
Detection components are believed for detecting to be formed by flute profile to Low-K layers of wafer upper surface etching and obtain real-time flute profile
Breath；
First acquisition unit is set in controller and for obtaining the topological pattern distribution and as the first topological diagram
Case is distributed；
Third determination unit is set in controller and for true according to real-time flute profile information and the first topological pattern distribution
The adjusting parameter of fixed topology pattern distribution.
Optionally, the detection components include：
Beam splitting crystal, for laser beam beam splitting to be formed first laser beamlet and second laser beamlet, and respectively
First laser beamlet is emitted to the phase control-type liquid crystal on silicon, second laser beamlet emits to lens subassembly；
Monitor light source, for Low-K layers of wafer upper surface it is etched after be formed by flute profile and be monitored；
CCD devices, for obtaining real-time flute profile information and being imaged；
Lens subassembly is used for second laser beamlet focus emission to CCD devices.
Shown in sum up, as shown in figure 3, the present embodiment described device includes optical fiber collimator 2, the polarizer 3, beam-expanding collimation member
The laser beam that part 4 sends out laser 1 carries out pre-processing and forms collimated light beam, then by beam splitting crystal 5 by laser beam
It is divided at least two laser beamlets, first laser beamlet injects focusing element array after the fine tuning of phase control-type liquid crystal on silicon 6
7, diaphragm 8 so as to wafer upper surface Low-K layers be processed；Second laser beamlet inject successively the 4th beam splitting crystal 18,
Lens subassembly 19, CCD devices 20 or imaging device 20 are realized detects and obtains in real time real-time flute profile information to flute profile, and according to
Real-time flute profile information and the first topological pattern distribution determine the adjusting parameter of topological pattern distribution, and through phase control-type liquid crystal on silicon into
Row adjustment.Simultaneously also by monitoring 18 realization of the injection beam splitting of light source 17 crystal to the monitoring of flute profile and laser being avoided to inculcate to CCD
The influence of device.
Alternatively, as shown in figure 11, device provided in an embodiment of the present invention may also include optical fiber collimator 2, the polarizer 3, expand
Beam collimating element 4 carries out pre-processing to the laser beam that laser 1 is sent out and forms collimated light beam, then will by beam splitting crystal 21
Collimated light beam is divided into detection light beam and machining beams, and by the detection beam emissions to Low-K layers of wafer upper surface, then instead
It is incident upon Thickness sensitivity unit 22；The machining beams are emitted to beam splitting crystal 5 to and are divided into machining beams at least two beamlets,
First beamlet injects focusing element array 7, diaphragm 8 in turn to wafer upper surface after the fine tuning of phase control-type liquid crystal on silicon 6
Low-K layers are processed；Second beamlet injects beam splitting crystal 11 and is simultaneously divided into third beamlet and the 4th beamlet, and by third
Beamlet injects lens subassembly 12, CCD devices 13 carry out light distribution, the detection of focal position；It is injected by monitoring light source 17
Beam splitting crystal 18 realizes the monitoring to flute profile and laser is avoided to inculcate the influence to CCD devices, and the 4th beamlet is penetrated successively
Enter beam splitting crystal 18, lens subassembly 19, CCD devices 20 or the realization of imaging device 20 to the imaging function of laser facula, Jin Ershi
Real-time flute profile information is now detected and obtained in real time to flute profile, and is determined according to real-time flute profile information and the first topological pattern distribution
The adjusting parameter of topological pattern distribution, and be adjusted through phase control-type liquid crystal on silicon.
The device of the present embodiment can be used for executing the technical solution of above method embodiment, realization principle and technology
Effect is similar, and details are not described herein again.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, all answer by the change or replacement that can be readily occurred in
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of method of laser processing wafer, which is characterized in that including：
Being arranged after laser beam is processed on the Low-K layers of wafer upper surface needs the default flute profile information to be formed；
The topological pattern distribution that need to be had according to default flute profile information matches laser beam；
Tool is formed after being split processing, Shape correction and focusing successively to laser beam according to the topological pattern distribution
The laser facula for having topological diagram case distribution, to be performed etching to Low-K layers of wafer upper surface and form default flute profile.
2. according to the method described in claim 1, it is characterized in that, the default flute profile information includes bathtub construction, flute profile
One or any combination in the depth of width and flute profile.
3. according to the method described in claim 2, it is characterized in that, the default flute profile information matches laser beam of the basis needs to have
The topological pattern distribution having, including：
It obtains bathtub construction and determines the distribution of shapes of the laser facula according to bathtub construction；
It obtains the width of flute profile and determines the size distribution of laser facula according to the width of flute profile；
Topological pattern distribution is determined according to the distribution of shapes of the laser facula, size distribution.
4. according to any methods of claim 1-3, which is characterized in that the method further includes：
The depth and topological pattern for obtaining the flute profile are distributed；
Intensity and the focal position of the laser beam are determined according to the depth of the flute profile and topological pattern distribution.
5. according to any methods of claim 1-3, which is characterized in that when to wafer upper surface, Low-K layers perform etching
Afterwards, further include：
Detection is formed by flute profile to Low-K layers of wafer upper surface etching and obtains real-time flute profile information；
Obtain the topological pattern distribution and as the first topological pattern distribution；
The adjusting parameter of topological pattern distribution is determined according to real-time flute profile information and the first topological pattern distribution；
The topological pattern distribution of laser beam is adjusted to form the second topological pattern distribution according to the adjusting parameter, and will
Laser beam with the distribution of the second pattern performs etching wafer upper surface for Low-K layers.
6. a kind of device of laser processing wafer, which is characterized in that including：
Setting member needs the default flute profile information to be formed for being arranged after laser beam is processed on the Low-K layers of wafer upper surface；
Controller, the topological pattern distribution for that need to have according to flute profile information matches laser beam is preset；
Phase control-type liquid crystal on silicon, for being split successively at processing and shaping to laser beam according to the topological pattern distribution
It manages and forms the laser facula with the topological pattern distribution；
Focusing element array, for emitting the laser facula to Low-K layers of wafer upper surface and to wafer upper surface Low-K
Layer performs etching and forms default flute profile.
7. device according to claim 6, which is characterized in that the controller includes：
First computing unit, for obtaining bathtub construction and determining the distribution of shapes of the laser facula according to bathtub construction；
Second computing unit, width for obtaining flute profile and the size distribution that laser facula is determined according to the width of flute profile；
First determination unit, for determining topological pattern distribution according to distribution of shapes, the size distribution of the laser facula.
8. the device described according to claim 6 or 7, which is characterized in that the controller further includes：
First acquisition unit, depth and topological pattern for obtaining the flute profile are distributed；
Second determination unit, intensity for determining the laser beam according to the depth of the flute profile and topological pattern distribution and
Focal position.
9. the device described according to claim 6 or 7, which is characterized in that described device further includes：
Detection components are formed by flute profile to Low-K layers of wafer upper surface etching for detection and obtain real-time flute profile information；
Second acquisition unit is set in controller and for obtaining the topological pattern distribution and as the first topological pattern point
Cloth；
Third determination unit is set in controller and for being opened up according to real-time flute profile information and the first topological pattern distribution determination
Flutter the adjusting parameter of pattern distribution.
10. device according to claim 9, which is characterized in that the detection components include：
Beam splitting crystal, for laser beam beam splitting to be formed first laser beamlet and second laser beamlet, and respectively by the
One laser beamlets emit to the phase control-type liquid crystal on silicon, and second laser beamlet emits to lens subassembly；
Monitor light source, for Low-K layers of wafer upper surface it is etched after be formed by flute profile and be monitored；
CCD devices, for obtaining real-time flute profile information and being imaged；
Lens subassembly is used for second laser beamlet focus emission to CCD devices.
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Denomination of invention: Wafer laser processing method and device Effective date of registration: 20200114 Granted publication date: 20180914 Pledgee: Beijing Zhongke micro Intellectual Property Service Co., Ltd. Pledgor: Beijing Zhongke Radium Electronics Co., Ltd. Registration number: Y2020990000053 |
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