CN101419344A - Light beam translation electric control device and method based on Goos-Hanchen displacement effect - Google Patents

Light beam translation electric control device and method based on Goos-Hanchen displacement effect Download PDF

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Publication number
CN101419344A
CN101419344A CNA2008102034543A CN200810203454A CN101419344A CN 101419344 A CN101419344 A CN 101419344A CN A2008102034543 A CNA2008102034543 A CN A2008102034543A CN 200810203454 A CN200810203454 A CN 200810203454A CN 101419344 A CN101419344 A CN 101419344A
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metal film
lithium niobate
light beam
prism
crystal chip
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王毅
曹庄琪
李红根
沈启舜
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Shanghai Jiaotong University
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Shanghai Jiaotong University
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Abstract

The invention relates to a electric control device for beam translation based on Goos-Hanchen shift effect and a method thereof, and belongs to the technical field of laser control. A bottom surface of a prism and a lower surface of a lithium niobate wafer of an electro optic material are respectively plated with metal films, and the bottom surface of the prism and the surface of the lithium niobate wafer are adjusted to parallel and fixed by a metal bracket so as to form a wave guide double surfaces of which are clad by metal; and the wave guide is composed of an upper metal film, an air gap, the lithium niobate wafer and a lower metal film. When laser is emitted on the surface of the wave guide, the laser is coupled into a wave guiding layer to excite lateral shift of guided-mode resonance enhanced reflected light when a phase matching condition is satisfied. The upper metal film and the lower metal film are plated with electrodes and connected with an external DC voltage source, and the voltage is adjusted; parameters of the wave guiding layer are changed by electro optic effect and piezoelectric effect of the lithium niobate, which causes Goos-Hanchen shift change of the reflected light and further realizes control on the beam translation. The electric control device and the method thereof can achieve high stability and high precision of the beam translation control, and can be applied to general environments.

Description

Light beam translation controller for electric consumption and method based on the Gu Sihanxin displacement effect
Technical field
What the present invention relates to is a kind of laser technology field apparatus and method, particularly a kind of light beam translation controller for electric consumption and method based on the Gu Sihanxin displacement effect.
Background technology
Light beam translation control is widely used in industrial processes and area information storage, and along with laser application and development and technical renovation, the high-frequency high-precision of laser beam control having become laser is used a requisite link.Light beam moves and is controlled at the industrial processes field and generally adopts the mode of mechanical mobile light source to carry out, and the method simple, intuitive realizes directly that by the control mechanical drive light beam moves.But this method shortcoming also is apparent, and its vibration noise is often bigger, and the processing precise degree is subjected to great restriction.At area information storage, particularly optical storage medium read with writing station in, light beam moves the general position that changes light beam by one or more opticses in the mobile light path (prism, reflect grating etc.) of control.This method can realize the control of light beam micro-displacement, but still does not break away from the method for machinery control light path element, and the simple and easy degree of the stability of control and operation is subjected to certain limitation.
Through the retrieval of prior art document is found, people such as Li-Gang Wang are at " Physical ReviewA " Vol.77, deliver " Control of the Goos-on 023811 (2008)
Figure A200810203454D0004190004QIETU
Shift ofa light beam via a coherent driving field " (by relevant Driving Field control bundle Gu Sihanxin displacement; physical comment A; Vol.77; 023811 (2008)) literary composition; propose theoretically; can utilize the two level atom media that add in the relevant light field change cavity structure, thereby realize control light beam Gu Sihanxin displacement.This method benefit just is can be without the geometric shape and the locus of modifier structure, can reach very high stability and degree of accuracy to the control of light beam translation.Its where the shoe pinches just is that two level atom media are very high to experiment condition and environmental requirement, are difficult to be applied to general environment.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of light beam translation controller for electric consumption and method based on the Gu Sihanxin displacement effect proposed, coat in the waveguide by the electrooptical material lithium columbate crystal being introduced double-sided metal, utilize the electrooptical effect and the piezoelectric effect of lithium columbate crystal, adopt impressed voltage to regulate the ducting layer parameter of waveguide, thereby realize control light beam translation.
The present invention is achieved by the following technical solutions:
Light beam translation controller for electric consumption based on the Gu Sihanxin displacement effect involved in the present invention, comprise prism, the upper strata metal film, lithium niobate crystal chip, lower metal film, air-gap, direct voltage source, prism is positioned at the lithium niobate crystal chip top, the prism bottom surface is coated with the upper strata metal film, the lithium niobate crystal chip lower surface is coated with lower metal film, the prism bottom surface is parallel with the lithium niobate crystal chip surface, both rigidly fix by metal support, it between prism and the lithium niobate crystal chip air-gap, the double-sided metal that formation is made up of upper strata metal film-air-gap-lithium niobate crystal chip-lower metal film coats waveguiding structure, is coated with the external direct voltage source of electrode on upper strata metal film and the lower metal film.
Light beam translation electric control method based on the Gu Sihanxin displacement effect involved in the present invention comprises the steps:
The first step, a prism bottom surface and a lithium niobate crystal chip lower surface in a polishing plate the double layer of metal film respectively, it is parallel with the lithium niobate crystal chip surface to regulate the prism bottom surface, and both are rigidly fixed with metal support, be air-gap between prism and the lithium niobate crystal chip, form the double-sided metal of forming by upper strata metal film-air-gap-lithium niobate-lower metal film and coat waveguiding structure;
Second step, light beam is incided the upper strata metal film of prism bottom surface, satisfying under the condition of phase matching, beam energy is coupled in the double-sided metal coating waveguiding structure and causes that reflected light produces SPA sudden phase anomalies with respect to incident light, causes catoptrical Gu Sihanxin displacement to strengthen greatly;
The 3rd step plated the external direct voltage source of electrode on the double layer of metal film, because lithium columbate crystal has electrooptical effect and piezoelectric effect, regulate the ducting layer parameter by changing impressed voltage, thereby realize the control to catoptrical lateral shift.
Described upper strata metal film, upper strata metal film are selected for use operation wavelength are absorbed less noble metal, generally select gold or silver for use.The design of its thickness is relevant with operation wavelength, the metal specific inductive capacity and the thickness of ducting layer under operation wavelength, can carry out theoretical modeling in advance.Thickness is generally 20nm～25nm.
Described air-gap, its thickness is generally 0.1mm～0.3mm.
Described lithium niobate crystal chip, its electrooptical coefficient is relevant with piezoelectric modulus and operation wavelength, and its thickness is generally 0.3mm～0.5mm.
Described lower metal film, the lower metal membrane material is selected identical with the upper strata metal film.Lower metal film only plays the clad effect in waveguide, so thickness is relatively big, generally greater than 200nm.
Described beam incident angle θ generally selects near the reflectivity maximal value.
The polarization mode of described light beam is TE polarization or TM polarization.
Below with Gaussian beam specification of a model principle of work of the present invention:
Consider following a branch of Gaussian beam
ψ i ( x , z = 0 ) = exp ( - x 2 / 2 w x 2 + iβ x 0 x ) - - - ( 1 )
W wherein x=w 0Sec θ 0, w 0Be the waist radius of light beam, θ 0Be incident angle, β X0Be at incident angle θ 0The tangential component of following wave vector.Following formula is carried out fourier expansion
ψ i ( x , z = 0 ) = 1 2 π ∫ A ( β x ) exp ( iβ x x ) dβ - - - ( 2 )
Just obtain the fourier spectrum A (β of incident light x)
A ( β ) = w x exp [ - ( w x 2 / 2 ) ( β x - β x 0 ) 2 ] - - - ( 3 )
Light is after boundary reflection, and the light of each spectrum component all must be introduced a reflection coefficient r (β x), therefore catoptrical electromagnetic field distributes and is provided by following formula:
ψ r ( x , z = 0 ) = 1 2 π ∫ r ( β x ) A ( β x ) exp ( iβ x x ) dβ x - - - ( 4 )
The limit of integration of following formula is at interval (β p, β p), β wherein pBe airborne wave vector. at interval (β p, β p) go up to calculate this integration and just can obtain catoptrical electromagnetic field distribution.Find | Ψ r(x, z=0) | place, maximal value place just can obtain the value of reflected light Gu Sihanxin displacement.
When impressed voltage was U, the electrooptical effect of lithium niobate caused its variations in refractive index to be
Δn 3 = - 1 2 n 3 3 γ 13 E 3 , - - - ( 5 )
N wherein 3Be the o optical index of lithium niobate, γ 13Be electrooptical coefficient, E 3Electric field intensity for the lithium niobate layer.Owing to the piezoelectric effect of lithium niobate, lithium niobate layer and air layer thickness variation are respectively simultaneously
Δd 3＝d 33E 3d 3，(6)
Δd 5＝-d 33E 3d 3，(7)
D wherein 3Be the lithium niobate layer thickness during making alive not, d 33Piezoelectric modulus for lithium niobate.
By (5-7) formula as can be known, can change the ducting layer parameter of waveguide, make reflection coefficient r (β in (4) formula by regulating impressed voltage x) the catoptrical electromagnetic field distribution ψ of influence changes rThereby, realize control to light beam translation.
When laser of the present invention incides waveguide surface, be coupled into ducting layer satisfying under the condition of phase matching, excite guide mode resonance to strengthen catoptrical lateral shift.Plating the external direct voltage source of electrode on the double layer of metal film up and down, regulation voltage, utilize the electrooptical effect and the piezoelectric effect of lithium niobate to change the ducting layer parameter, cause reflected light Gu Sihanxin change in displacement, thereby realize control to light beam translation, control to light beam translation can reach very high stability and degree of accuracy, and concrete parameter is seen the embodiment part, and can be applied to general environment.
Description of drawings
Fig. 1 is the structure and the method schematic diagram of apparatus of the present invention;
Wherein: 1-prism, 2-upper strata metal film, 3-lithium niobate crystal chip, 4-lower metal film, 5-air-gap, 6-direct voltage source.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are specified: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment 1
As shown in Figure 1, the light beam translation controller for electric consumption that present embodiment is related based on the Gu Sihanxin displacement effect, comprise prism 1, upper strata metal film 2, lithium niobate crystal chip 3, lower metal film 4, air-gap 5, direct voltage source 6, prism 1 bottom surface is coated with upper strata metal film 2, lithium niobate crystal chip 3 lower surfaces are coated with lower metal film 4, prism 1 bottom surface is parallel with lithium niobate crystal chip 3 surfaces, both rigidly fix by metal support, be air-gap 5 between prism 1 and the lithium niobate crystal chip 3, the double-sided metal that formation is made up of upper strata metal film-air-gap-lithium niobate crystal chip-lower metal film coats waveguiding structure, is coated with the external direct voltage source 6 of electrode on upper strata metal film 2 and the lower metal film 4.
Described upper strata metal film 1 is selected gold or silver for use, and thickness is 20nm～25nm.
Described air-gap 5, its thickness are 0.1mm～0.3mm.
Described lithium niobate crystal chip 3, its thickness are 0.3mm～0.5mm.
Described lower metal film 4, the lower metal membrane material is selected identical with the upper strata metal film.The lower metal film thickness is greater than 200nm.
Described direct voltage source 6, its voltage-regulation scope is at 0～2400V.
Embodiment 2:
The light beam translation electric control method that present embodiment is related based on the Gu Sihanxin displacement effect, 860 μ m are example with wavelength, and under this wavelength, lithium niobate o optical index is 2.392, and electrooptical coefficient is γ 13=8.27pm/V, piezoelectric modulus are d 33=8pm/V.
The first step, prism 1 bottom surface and a lithium niobate crystal chip 3 lower surfaces in a polishing plate double layer of metal film 2,4 respectively, it is parallel with lithium niobate crystal chip 3 surfaces to regulate prism 1 bottom surface, and both are rigidly fixed with metal support, be air-gap 5 between prism 1 and the lithium niobate crystal chip 3, form the double-sided metal of forming by upper strata metal film-air-gap-lithium niobate-lower metal film and coat waveguiding structure.
Second step, light beam is incided the upper strata metal film 2 of prism 1 bottom surface, satisfying under the condition of phase matching, beam energy is coupled in the double-sided metal coating waveguiding structure and causes that reflected light produces SPA sudden phase anomalies with respect to incident light, causes catoptrical Gu Sihanxin displacement to strengthen greatly;
The 3rd step plated the external direct voltage source 6 of electrode on double layer of metal film 2,4, because lithium columbate crystal has electrooptical effect and piezoelectric effect, regulate the ducting layer parameter by changing impressed voltage, thereby realize the control to catoptrical lateral shift.
In the first step, metal material is selected gold, prism 1 refractive index is 1.5, golden film 2 thickness that prism 1 bottom surface plates are 20nm, air-gap 5 thickness are 0.1mm, and its refractive index is 1, and lithium niobate crystal chip 3 thickness are 0.3mm, golden film 4 thickness are 200 μ m on the lithium niobate crystal chip 3, the gold dielectric coefficient be ε=-near 28+1.8i (the wavelength 860 μ m).Light beam is the TE polarization, and incident angle is chosen in θ=5.010 ° according to theoretical modeling.
According to described Gaussian beam Model Calculation, when waveguide and light beam were set in above-mentioned parameter, applying direct current was pressed in and regulates the translation in the scope of 0～940 μ m of may command reflected light in 0～800V scope.Catoptrical translational movement is as shown in the table with the situation that the impressed voltage adjusting changes:
Impressed DC voltage (V) Reflected light translational movement (μ m)
0 100 200 300 400 500 600 700 0 35.86 81.68 143.45 241.07 429.35 683.37 863.68
800 946.37
Embodiment 3:
The light beam translation electric control method that present embodiment is related based on the Gu Sihanxin displacement effect, 860 μ m are example with wavelength, and under this wavelength, lithium niobate o optical index is 2.392, and electrooptical coefficient is γ 13=8.27pm/V, piezoelectric modulus are d 33=8pm/V.
The first step, prism 1 bottom surface and a lithium niobate crystal chip 3 lower surfaces in a polishing plate double layer of metal film 2,4 respectively, it is parallel with lithium niobate crystal chip 3 surfaces to regulate prism 1 bottom surface, and both are rigidly fixed with metal support, be air-gap 5 between prism 1 and the lithium niobate crystal chip 3, form the double-sided metal of forming by upper strata metal film-air-gap-lithium niobate-lower metal film and coat waveguiding structure.
In the present embodiment, metal material is selected gold, prism 1 refractive index is 1.5, golden film 2 thickness on the prism 1 are 25nm, air-gap 5 thickness are 0.2mm, and its refractive index is 1, and lithium niobate crystal chip 3 thickness are 0.4mm, golden film 4 thickness on the lithium niobate crystal chip 3 are 200 μ m, the gold dielectric coefficient be ε=-near 28+1.8i (the wavelength 860 μ m).Light beam is the TE polarization, and incident angle is chosen in θ=5.676 ° according to theoretical modeling.
Second step is identical with embodiment 2 with the 3rd step.
Show that according to calculating when waveguide and light beam were set in above-mentioned parameter, applying direct current was pressed in and regulates the translation in the scope of 0～940 μ m of may command reflected light in 0～2000V scope.Catoptrical translational movement is as shown in the table with the situation that the impressed voltage adjusting changes:
Impressed DC voltage (V) Reflected light translational movement (μ m)
0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 49.75 118.42 220.91 365.20 525.41 666.72 777.17 858.77 913.50 943.35
Embodiment 4:
The light beam translation electric control method that present embodiment is related based on the Gu Sihanxin displacement effect, 860 μ m are example with wavelength, and under this wavelength, lithium niobate o optical index is 2.392, and electrooptical coefficient is γ 13=8.27pm/V, piezoelectric modulus are d 33=8pm/V.
The first step, prism 1 bottom surface and a lithium niobate crystal chip 3 lower surfaces in a polishing plate the double layer of metal film respectively, it is parallel with lithium niobate crystal chip 3 surfaces to regulate prism 1 bottom surface, and both are rigidly fixed with metal support, be air-gap 5 between prism 1 and the lithium niobate crystal chip 3, form the double-sided metal of forming by upper strata metal film-air-gap-lithium niobate-lower metal film and coat waveguiding structure.
In the present embodiment, metal material is selected silver, prism 1 refractive index is 1.5, golden film 2 thickness that prism 1 bottom surface plates are 23nm, air-gap 5 thickness are 0.3mm, and its refractive index is 1, and lithium niobate crystal chip 3 thickness are 0.5mm, golden film 4 thickness on the lithium niobate crystal chip 3 are 200 μ m, the gold dielectric coefficient be ε=-near 34.2+1.17i (the wavelength 860 μ m).Light beam is the TM polarization, and incident angle is chosen in θ=3.927 ° according to theoretical modeling.
Second step is identical with embodiment 2 with the 3rd step.
Show that according to calculating when waveguide and light beam were set in above-mentioned parameter, applying direct current was pressed in and regulates the translation in the scope of 0～1080 μ m of may command reflected light in 0～2400V scope.Catoptrical translational movement is as shown in the table with the situation that the impressed voltage adjusting changes:
Impressed DC voltage (V) Reflected light translational movement (μ m)
0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 36.91 82.81 153.64 270.36 433.98 603.58 748.24 861.97 946.77 1009.62 1053.52 1080.46

Claims (10)

1, a kind of light beam translation controller for electric consumption based on the Gu Sihanxin displacement effect, it is characterized in that comprising prism, the upper strata metal film, lithium niobate crystal chip, lower metal film, air-gap, direct voltage source, wherein: prism is positioned at the lithium niobate crystal chip top, the prism bottom surface is coated with the upper strata metal film, the lithium niobate crystal chip lower surface is coated with lower metal film, the prism bottom surface is parallel with the lithium niobate crystal chip surface, both rigidly fix by metal support, it between prism and the lithium niobate crystal chip air-gap, the double-sided metal that formation is made up of upper strata metal film-air-gap-lithium niobate crystal chip-lower metal film coats waveguiding structure, is coated with the external direct voltage source of electrode on upper strata metal film and the lower metal film.
2, the light beam translation controller for electric consumption based on the Gu Sihanxin displacement effect according to claim 1 is characterized in that, described metal film, and upper strata metal film metal is selected gold or silver for use, and thickness is generally 20nm～25nm; The lower metal membrane material is selected identical with the upper strata metal film, and the lower metal film thickness is greater than 200nm.
3, the light beam translation controller for electric consumption based on the Gu Sihanxin displacement effect according to claim 1 is characterized in that, described air-gap, its thickness are 0.1mm～0.3mm.
4, the light beam translation controller for electric consumption based on the Gu Sihanxin displacement effect according to claim 1 is characterized in that, described lithium niobate crystal chip, its thickness are 0.3mm～0.5mm.
5, a kind of light beam translation electric control method based on the Gu Sihanxin displacement effect is characterized in that, comprises the steps:
The first step, a prism bottom surface and a lithium niobate crystal chip lower surface in a polishing plate the double layer of metal film respectively, it is parallel with the lithium niobate crystal chip surface to regulate the prism bottom surface, and both are rigidly fixed with metal support, be air-gap between prism and the lithium niobate crystal chip, form the double-sided metal of forming by upper strata metal film-air-gap-lithium niobate-lower metal film and coat waveguiding structure;
Second step, light beam is incided the upper strata metal film of prism bottom surface, satisfying under the condition of phase matching, beam energy is coupled in the double-sided metal coating waveguiding structure and causes that reflected light produces SPA sudden phase anomalies with respect to incident light, causes catoptrical Gu Sihanxin displacement to strengthen greatly;
The 3rd step plated the external direct voltage source of electrode on the double layer of metal film, because lithium columbate crystal has electrooptical effect and piezoelectric effect, regulate the ducting layer parameter by changing impressed voltage, thereby realize the control to catoptrical lateral shift.
6, the light beam translation electric control method based on the Gu Sihanxin displacement effect according to claim 5 is characterized in that, described beam incident angle θ selects near the reflectivity maximal value.
7, the light beam translation electric control method based on the Gu Sihanxin displacement effect according to claim 5 is characterized in that, the polarization mode of described light beam is TE polarization or TM polarization.
8, the light beam translation electric control method based on the Gu Sihanxin displacement effect according to claim 5 is characterized in that, described metal film, and upper strata metal film metal is selected gold or silver for use, and thickness is generally 20nm～25nm; The lower metal membrane material is selected identical with the upper strata metal film, and the lower metal film thickness is greater than 200nm.
9, the light beam translation electric control method based on the Gu Sihanxin displacement effect according to claim 5 is characterized in that, described air-gap, its thickness are 0.1mm～0.3mm.
10, the light beam translation electric control method based on the Gu Sihanxin displacement effect according to claim 5 is characterized in that, described lithium niobate crystal chip, its thickness are 0.3mm～0.5mm.
CNA2008102034543A 2008-11-27 2008-11-27 Light beam translation electric control device and method based on Goos-Hanchen displacement effect Pending CN101419344A (en)

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CN102240848A (en) * 2011-06-15 2011-11-16 中科中涵激光设备（福建）股份有限公司 Method for adjusting laser beam to generate dynamic transverse displacement
US9250128B2 (en) 2012-03-02 2016-02-02 Beihang University Method and apparatus for optical asynchronous sampling signal measurements
CN105705936A (en) * 2013-08-29 2016-06-22 康宁股份有限公司 Prism-coupling systems and methods for characterizing curved parts
CN108322085A (en) * 2018-02-28 2018-07-24 复拓科学仪器（苏州）有限公司 Piezoelectric ceramics nano-resolution displacement driver
CN111928781A (en) * 2020-06-22 2020-11-13 成都信息工程大学 Gus Hansen displacement-based regulation and control device and regulation and control method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102230986A (en) * 2011-05-20 2011-11-02 北京航空航天大学 Optical phase device as well as application method and system thereof
CN102230986B (en) * 2011-05-20 2013-10-09 北京航空航天大学 Optical phase device as well as application method and system thereof
CN102240848A (en) * 2011-06-15 2011-11-16 中科中涵激光设备（福建）股份有限公司 Method for adjusting laser beam to generate dynamic transverse displacement
US9250128B2 (en) 2012-03-02 2016-02-02 Beihang University Method and apparatus for optical asynchronous sampling signal measurements
US9863815B2 (en) 2012-03-02 2018-01-09 Beihang University Method and apparatus for multifrequency optical comb generation
CN105705936A (en) * 2013-08-29 2016-06-22 康宁股份有限公司 Prism-coupling systems and methods for characterizing curved parts
CN105705936B (en) * 2013-08-29 2019-11-05 康宁股份有限公司 For characterizing the prism-coupled system and method for curved part
CN108322085A (en) * 2018-02-28 2018-07-24 复拓科学仪器（苏州）有限公司 Piezoelectric ceramics nano-resolution displacement driver
CN111928781A (en) * 2020-06-22 2020-11-13 成都信息工程大学 Gus Hansen displacement-based regulation and control device and regulation and control method
CN111928781B (en) * 2020-06-22 2022-04-12 成都信息工程大学 Gus Hansen displacement-based regulation and control device and regulation and control method

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