CN102893373B - 用于生长半导体装置的复合生长衬底 - Google Patents

用于生长半导体装置的复合生长衬底 Download PDF

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Publication number
CN102893373B
CN102893373B CN201180024753.0A CN201180024753A CN102893373B CN 102893373 B CN102893373 B CN 102893373B CN 201180024753 A CN201180024753 A CN 201180024753A CN 102893373 B CN102893373 B CN 102893373B
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Prior art keywords
layer
donor
strained
donor layer
substrate
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CN201180024753.0A
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Chinese (zh)
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CN102893373A (zh
Inventor
A·Y·金
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Koninklijke Philips NV
Lumileds LLC
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Koninklijke Philips Electronics NV
Philips Lumileds Lighing Co LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201180024753.0A 2010-05-19 2011-04-27 用于生长半导体装置的复合生长衬底 Active CN102893373B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/783,354 US8536022B2 (en) 2010-05-19 2010-05-19 Method of growing composite substrate using a relaxed strained layer
US12/783354 2010-05-19
PCT/IB2011/051844 WO2011145012A1 (en) 2010-05-19 2011-04-27 Composite growth substrate for growing a semiconductor device

Publications (2)

Publication Number Publication Date
CN102893373A CN102893373A (zh) 2013-01-23
CN102893373B true CN102893373B (zh) 2016-07-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180024753.0A Active CN102893373B (zh) 2010-05-19 2011-04-27 用于生长半导体装置的复合生长衬底

Country Status (7)

Country Link
US (1) US8536022B2 (enExample)
EP (1) EP2572370A1 (enExample)
JP (1) JP5848334B2 (enExample)
KR (1) KR101810711B1 (enExample)
CN (1) CN102893373B (enExample)
TW (1) TW201222631A (enExample)
WO (1) WO2011145012A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120309172A1 (en) * 2011-05-31 2012-12-06 Epowersoft, Inc. Epitaxial Lift-Off and Wafer Reuse
US10141197B2 (en) * 2016-03-30 2018-11-27 Stmicroelectronics S.R.L. Thermosonically bonded connection for flip chip packages
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1500288A (zh) * 2001-03-31 2004-05-26 国际商业机器公司 形成绝缘体上的应变硅(ssoi)的方法及其形成的结构
CN1726581A (zh) * 2002-12-19 2006-01-25 国际商业机器公司 应变绝缘体上硅(ssoi)及其形成方法
CN101180741A (zh) * 2005-04-05 2008-05-14 飞利浦拉米尔德斯照明设备有限责任公司 具有减小了温度依赖性的AlInGaP LED

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2817394B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6717213B2 (en) * 2001-06-29 2004-04-06 Intel Corporation Creation of high mobility channels in thin-body SOI devices
US7279718B2 (en) 2002-01-28 2007-10-09 Philips Lumileds Lighting Company, Llc LED including photonic crystal structure
CN100483666C (zh) 2003-01-07 2009-04-29 S.O.I.Tec绝缘体上硅技术公司 施主晶片以及重复利用晶片的方法和剥离有用层的方法
FR2851848B1 (fr) 2003-02-28 2005-07-08 Soitec Silicon On Insulator Relaxation a haute temperature d'une couche mince apres transfert
FR2857983B1 (fr) * 2003-07-24 2005-09-02 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiee
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US6956247B1 (en) 2004-05-26 2005-10-18 Lumileds Lighting U.S., Llc Semiconductor light emitting device including photonic band gap material and luminescent material
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
US8334155B2 (en) 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
US20070069225A1 (en) 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
US7547908B2 (en) * 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US20080259980A1 (en) * 2007-04-19 2008-10-23 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Including Oxide Layer
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
FR2931293B1 (fr) 2008-05-15 2010-09-03 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure support d'epitaxie et heterostructure correspondante
TWI457984B (zh) * 2008-08-06 2014-10-21 Soitec Silicon On Insulator 應變層的鬆弛方法
CN102239538A (zh) * 2008-09-24 2011-11-09 S.O.I.探测硅绝缘技术公司 形成经松弛半导体材料层、半导体结构、装置的方法及包含经松弛半导体材料层、半导体结构、装置的工程衬底
JP5109912B2 (ja) * 2008-10-03 2012-12-26 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置
US8227791B2 (en) * 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
WO2011022730A1 (en) * 2009-08-21 2011-02-24 The Regents Of The University Of California Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
US8105852B2 (en) * 2010-01-15 2012-01-31 Koninklijke Philips Electronics N.V. Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1500288A (zh) * 2001-03-31 2004-05-26 国际商业机器公司 形成绝缘体上的应变硅(ssoi)的方法及其形成的结构
CN1726581A (zh) * 2002-12-19 2006-01-25 国际商业机器公司 应变绝缘体上硅(ssoi)及其形成方法
CN101180741A (zh) * 2005-04-05 2008-05-14 飞利浦拉米尔德斯照明设备有限责任公司 具有减小了温度依赖性的AlInGaP LED

Also Published As

Publication number Publication date
EP2572370A1 (en) 2013-03-27
CN102893373A (zh) 2013-01-23
KR20130113337A (ko) 2013-10-15
TW201222631A (en) 2012-06-01
US20110284993A1 (en) 2011-11-24
KR101810711B1 (ko) 2017-12-19
JP2013528945A (ja) 2013-07-11
US8536022B2 (en) 2013-09-17
WO2011145012A1 (en) 2011-11-24
JP5848334B2 (ja) 2016-01-27

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Address after: Eindhoven, Netherlands

Co-patentee after: LUMILEDS LLC

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Eindhoven, Netherlands

Co-patentee before: Philips Ramildes Lighting Equipment Co.,Ltd.

Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20200828

Address after: Holland Schiphol

Patentee after: KONINKLIJKE PHILIPS NV

Address before: Eindhoven, Netherlands

Co-patentee before: LUMILEDS LLC

Patentee before: KONINKLIJKE PHILIPS N.V.

TR01 Transfer of patent right