CN102890736A - Measuring method for resistance of three-terminal resistors used for integrated circuits - Google Patents

Abstract

The invention discloses a measuring method for the resistance of three-terminal resistors used for integrated circuits, comprising the following steps that: (10) a macro-model of the three-terminal resistors used for integrated circuits is established; (20) a test structure of the three-terminal resistors used for integrated circuits is constructed; (30) a diode test data file and a three-terminal resistor test data file are established; (40) a model of the alternating current characteristic of the three-terminal resistors used for integrated circuits is established; (50) a model of the direct current characteristic of the three-terminal resistors used for integrated circuits is established; (60) a model file of the three-terminal resistors is established; and (70) the resistance characteristic of the three-terminal resistors in integrated circuits is measured. The measuring method is simple and effective and can solve the problems that the simulation method which is based on a three-terminal resistor physical model R3cmc of the existing integrated circuit engineering is excessively complex and the degree of fitting to size is poor.

Description

A kind of integrated circuit is with the measuring method of three end resistances

Technical field

The invention belongs to microelectronic component emulation field, specifically, relate to a kind of integrated circuit with the measuring method of three end resistances.

Background technology

Resistance is a kind of important semiconductor devices in the integrated circuit, is widely used in integrated circuit fields.Usually the resistance emulation of using on the IC project all is the two ends Resistance model for prediction of using, and this models fitting parameter is seldom carried mold process simple, but it does not consider that substrate bias is for the impact of resistance.Although use the simple but out of true very of the resistance emulation mode of two ends Resistance model for prediction, so the resistance emulation mode of two ends Resistance model for prediction can not well instruct integrated circuit (IC) design and emulation.

In addition, as far back as 2007, the international compact models council (compact model council) has just issued a kind of integrated circuit with the physical model R3_cmc of three end resistance, this model is based on the physical characteristics of three end resistance, considered that the self-heating effect of resistance, speed are saturated, the impact of statistics variations etc.R3_cmc is a kind of nonlinear compact Resistance model for prediction, and its resistance all presents nonlinear characteristic with the variation of resistance three ends institute making alive, physical dimension.But, not being widely used by industry based on the resistance emulation mode of R3_cmc model, its reason is: 1, R3_cmc has more than 90 parameter, so that the simulation process of resistance is too complicated loaded down with trivial details; 2, the R3_cmc model can not be well three end resistance of the good different size of simultaneously match.Therefore, although existing integrated circuit based on the R3_cmc model is more accurate too complicated with the emulation mode of three end resistance, can not effectively use in engineering.

Summary of the invention

Technical matters: technical matters to be solved by this invention is: the measuring method of a kind of integrated circuit with three end resistances is provided, this measuring method is simply effective, can solve on the existing IC project the too complicated and problem poor to the size degree of fitting of emulation mode based on three end resistance physical model R3_cmc.

Technical scheme: in order to solve the problems of the technologies described above, the present invention adopts following technical scheme:

A kind of integrated circuit may further comprise the steps with the measuring method of three end resistances, this measuring method:

Step 10) set up integrated circuit with the macro model of three end resistance: this macro model is a circuit that contains source, drain terminal and three ports of substrate terminal, wherein, between source and drain terminal, be connected a resistance, be connected respectively a parasitic diode between source and substrate terminal and between drain terminal and substrate terminal, this macro model consists of three end resistance;

Step 20) makes up integrated circuit with the test structure of three end resistance: according to the integrated circuit of the step 10) foundation macro model with three end resistance, make up integrated circuit with the test structure of three end resistance, this test structure comprises three end resistance of different size, and different size, with three end resistance with finish under the technique and have the diode of same structure with the parasitic diode of three end resistance;

Step 30) set up Test Diode data file and three end resistance test data files: according to step 20) in the integrated circuit that makes up with the test structure of three end resistance, be made into chip, then test diode in this chip and the electrology characteristic of three end resistance, form Test Diode data file and three end resistance test data files;

Step 40) sets up integrated circuit with the model of the AC characteristic of three end resistance: in carrying mould software, at first the preference pattern type is the diode model, carry mould software and automatically generate the diode simulation curve according to the diode model, then be written into step 30) the Test Diode data file that obtains, carry mould software and form the Test Diode curve according to the Test Diode data file; Then adjust the model parameter in the diode model, change the diode simulation curve, until the root-mean-square error that diode simulation curve and Test Diode curve obtain is less than diode match setting value, preserve at last the model parameter of diode model, the model parameter of this diode model is integrated circuit with the model of the AC characteristic of three end resistance;

Step 50) set up integrated circuit with the model of the DC characteristic of three end resistance:

Step 501) three end resistances is carried out the correction of temperature, size, substrate bias, set up the model file of three end resistance DC characteristic;

Tempc=temper-25 (formula 1)

Teff=1+tc1 * tempc+tc2 * tempc ²(formula 2)

In the formula, tc1 represents the single order fitting parameter of temperature, tc2 represents the second-order fit parameter of temperature, temper represents the probe temperature of three end resistance, tempc represents the difference of three end resistance test temperature and room temperature, the unit of temper and tempc is degree centigrade, and teff represents that temperature is to the influence coefficient of three end resistances; Wherein, tc1 and tc2 are the model parameters in the model of three end resistance DC characteristic;

$\mathrm{reff}=\mathrm{rsh}\×\frac{l-\mathrm{dl}}{w-\mathrm{dw}}\×\mathrm{teff}\×(1+\frac{\mathrm{pvc}1}{(l-\mathrm{dl})\×{10}^6}\×|V_{\mathrm{SD}}|+\frac{\mathrm{pvc}2}{{(l-\mathrm{dl})}^2\×{10}^{12}}\×{V_{\mathrm{SD}}}^2)$

(formula 3)

$\&times;(1+(\mathrm{<figure-callout\; id="1"\; label="pv"\; filenames="HDA00002190570500022.png,HDA00002190570500042.png"\; state="\{\{state\}\}">pv</figure-callout>}1+\frac{\mathrm{pv}1l}{l-\mathrm{dl}}+\frac{\mathrm{pv}1w}{w-\mathrm{dw}})\&times;|V_{\mathrm{SS}}\left|\right)$

In the formula: reff represents the dc resistance of three end resistance, and unit is ohm; Rsh represents square resistance, and unit is ohms/square; L represents the length of three end resistance, and w represents the width of three end resistance, and dl represents the length offset amount of three end resistance, and dw represents the width offset of three end resistance, and the unit of l, w, dl and dw is micron; L-dl represents the effective length of three end resistance, and w-dw represents the effective width of three end resistance; V _SDRepresent voltage between three end resistance sources and the drain terminal, unit is volt; Pvc1 represents V _SDFor the first order influence coefficient of three end resistances, and pvcl is relevant with the effective length of three end resistance; Pvc2 represents V _SDFor the second order influence coefficient of three end resistances, and pvc2 is relevant with the effective length of three end resistance; V _SSRepresent the voltage between three end resistance sources and the substrate terminal, unit is volt; Pv1l represents V _SSFor the first order influence coefficient of three end resistances, and pv1l is relevant with the effective length of three end resistance; Pv1w represents V _SSFor the first order influence coefficient of three end resistances, and pv1w is relevant with the effective width of three end resistance; Pv1 represents V _SSThe first order influence coefficient to three end resistances; Wherein, rsh, dl, dw, pvc1, pvc2, pv1l, pv1w and pv1 are the model parameters in the model of three end resistance DC characteristic;

Model parameter to the model of the DC characteristic of three end resistance is given initial value, then be based upon the model file of putting forward the three end resistance DC characteristic that mould software can identify, this model file comprises initial value, formula (1), formula (2) and the formula (3) of model parameter;

Step 502) the three end Resistance model for prediction files that mould software can be identified are carried in establishment, this model file comprises macro model and the step 501 that step 10) is set up) in the model of three end resistance DC characteristic in model parameter, and with this model file and step 501) to be placed on the same file folder lower for the model file of the three end resistance DC characteristic that obtain;

Step 503) in carrying mould software, at first the preference pattern type is three end Resistance model for prediction, be written into step 30) the three end resistance test data files that obtain, carry mould software and form three end resistance test curves according to three end resistance test data files, then be written into step 502) the middle three end Resistance model for prediction files that create, carry mould software and automatically generate three end resistance simulation curves according to this model file, then set-up procedure 502) model parameter in the three end Resistance model for prediction files that create in, change three end resistance simulation curves, until the root-mean-square error that three end resistance simulation curves and three end resistance test curves obtain is less than three end Resistance Fitting setting values, preserve at last step 502) in three end Resistance model for prediction files in model parameter, this model parameter is integrated circuit with the model of the DC characteristic of three end resistance;

Step 60) set up three end Resistance model for prediction files: with step 40) integrated circuit that obtains is with model and the step 50 of the AC characteristic of three end resistance) integrated circuit that obtains integrates with the model of the DC characteristic of three end resistance, make the three end Resistance model for prediction files that comprise three end resistance DC and AC characteristics for integrated circuit simulating software, in this three ends Resistance model for prediction file, the girth of two parasitic diodes is w+l, and area is w * l/2;

Step 70) resistance characteristic of three end resistance in the measurement integrated circuit: in integrated circuit simulating software, for three end resistance in the integrated circuit simulating, invocation step 60) the three end Resistance model for prediction files that obtain are measured the resistance characteristic of three end resistance under the alternating current-direct current signal function in the integrated circuit.

Beneficial effect: compared with prior art, the present invention has following beneficial effect:

1. the parameter of using in the measuring process is few, so that measuring process is simple to operation.Existing resistance measurement method based on the R3cmc model has more than 90 parameter, so that the measuring process of resistance is too complicated loaded down with trivial details.And only have 10 parameters in the measuring method that the present invention adopts, be respectively tc1, tc2, rsh, dl, dw, pvc1, pvc2, pv1l, pv1w and pv1.Like this, in the process that integrated circuit is measured with three end resistances, the parameter of use is few, and measuring process is just more simple and efficient.The clear of 10 parameters using among the present invention simultaneously.

2. the degree of accuracy of integrated circuit being measured with three end resistances is high.Existing resistance measurement method based on the R3_cmc model is three end resistance of simultaneously match different size well.Considered in the measuring method of integrated circuit of the present invention with three end resistances temperature, size especially substrate bias for the impact of resistance, three end resistance under simultaneously emulation different temperatures, different size, the different bias voltage, so that the emulation of resistance effectively raises the accuracy of resistance emulation more near the actual working characteristics of resistance in the integrated circuit.In addition, measuring method of the present invention has been considered the impact of three end resistance two ends parasitic diodes, so that the DC characteristic that the method not only can emulation three end resistance, and AC characteristic that can well emulation three end resistance, further improved resistance.

3. be suitable for applying on the engineering.Integrated circuit of the present invention is with the measuring method of three end resistances, and parameter is few, measures three end resistance degree of accuracy high, is suitable for the enterprising line integrated circuit design of engineering and emulation.

Description of drawings

Fig. 1 is process flow diagram of the present invention.

Fig. 2 is the structural drawing of macro model in the step 10) of the present invention.

Fig. 3 is in the embodiment of the invention 1, the test curve of diode " capacitance-voltage " characteristic and the fitted figure of simulation curve.

Fig. 4 is in the embodiment of the invention 2, the test curve of diode " current-voltage " characteristic and the fitted figure of simulation curve.

Fig. 5 is in the embodiment of the invention 3, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Fig. 6 is in the embodiment of the invention 4, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Fig. 7 is in the embodiment of the invention 5, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Fig. 8 is in the Comparative Examples 1 of the present invention, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Fig. 9 is in the Comparative Examples 2 of the present invention, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Figure 10 is in the Comparative Examples 3 of the present invention, three end resistance " resistance-V _SD" test curve of characteristic and the fitted figure of simulation curve.

Embodiment

Further specify technical scheme of the present invention below in conjunction with accompanying drawing.

As shown in Figure 1, a kind of integrated circuit of the present invention may further comprise the steps with the measuring method of three end resistances:

Step 10) set up integrated circuit with the macro model of three end resistance: this macro model is a circuit that contains source, drain terminal and three ports of substrate terminal, wherein, between source and drain terminal, be connected a resistance, be connected respectively a parasitic diode between source and substrate terminal and between drain terminal and substrate terminal, this macro model consists of three end resistance.

As shown in Figure 2, macro model has three ports, is respectively S end, D end and Sub end, and the S end is source, and the D end is drain terminal, and the Sub end is substrate terminal, and D1 and D2 represent respectively parasitic diode.

Step 20) makes up integrated circuit with the test structure of three end resistance: according to the integrated circuit of the step 10) foundation macro model with three end resistance, make up integrated circuit with the test structure of three end resistance, this test structure comprises three end resistance of different size, and different size, with three end resistance with finish under the technique and have the diode of same structure with the parasitic diode of three end resistance.

Step 30) set up Test Diode data file and three end resistance test data files: according to step 20) in the integrated circuit that makes up with the test structure of three end resistance, be made into chip, then test diode in this chip and the electrology characteristic of three end resistance, form Test Diode data file and three end resistance test data files.

In step 30) in, test the electrology characteristic of the diode in this chip, comprise " current-voltage " family curve and " electric capacity-voltage " family curve that test different size diode obtains under different probe temperatures, form the Test Diode data file.The electrology characteristic of testing three end resistance in this chip is included in that loading range is that 0-5V, step-length are the voltage V of 0.1V between source and the drain terminal _SD, to be 0--5V, step-length be the voltage V of-1V to loading range between substrate terminal and source _SS, the test different size three " resistance-Vs of end resistance under different probe temperatures _SD" family curve, form three end resistance test data files.Different probe temperatures are for example chosen 125 ℃, 80 ℃, 25 ℃ ,-40 ℃ ,-85 ℃.

According to proposing the requirement of mould software to three end resistance datas, in case of necessity, the form of Update Table file.For example, test data is written into the English full name of MBP(: Model Builder program, a kind of instrument of proposing mould and modeling for the integrated circuit (IC)-components level by Accelicon company exploitation) during software, needs change the DataType{n} in the test data file into DataType{r}.

Step 40) set up integrated circuit with the model of the AC characteristic of three end resistance: in carrying mould software, at first the preference pattern type is the diode model, carries mould software and automatically generates the diode simulation curve according to the diode model; Then be written into step 30) the Test Diode data file that obtains, carry mould software and form the Test Diode curve according to the Test Diode data file; Then adjust the model parameter in the diode model, change the diode simulation curve, until the root-mean-square error that diode simulation curve and Test Diode curve obtain is less than diode match setting value, preserve at last the model parameter of diode model, the model parameter of this diode model is integrated circuit with the model of the AC characteristic of three end resistance.

Diode match setting value can according to the design needs of integrated circuit, be predesignated a numerical value.The root-mean-square error that obtains when diode simulation curve and Test Diode curve just stops to adjust the model parameter in the diode model, and preserves the model parameter of the diode model of this moment during less than this setting value.

The expression formula of root-mean-square error RMS is $\mathrm{RMS}=\sqrt{\frac{1}{N}\underset{i=1}{\overset{N}{\mathrm{\&Sigma;}}}{\left(\frac{\mathrm{mes}\left(i\right)-\mathrm{sim}\left(i\right)}{\max (\mathrm{mes}\left(i\right),\mathrm{sim}\left(i\right))}\right)}^2},$ Wherein, N represents counting of test data, the test data of i test point of mes (i) expression, the emulated data of i test point of sim (i) expression.

Step 50) set up integrated circuit with the model of the DC characteristic of three end resistance:

Step 501) three end resistances is carried out the correction of temperature, size, substrate bias, set up the model file of three end resistance DC characteristic;

Tempc=temper-25 (formula 1)

Teff=1+tc1 * tempc+tc2 * tempc ²(formula 2)

In the formula, tc1 represents the single order fitting parameter of temperature, tc2 represents the second-order fit parameter of temperature, temper represents the probe temperature of three end resistance, tempc represents the difference of three end resistance test temperature and room temperature, the unit of temper and tempc is degree centigrade, and teff represents that temperature is to the influence coefficient of three end resistances; Wherein, tc1 and tc2 are the model parameters in the model of three end resistance DC characteristic;

$\mathrm{reff}=\mathrm{rsh}\&times;\frac{l-\mathrm{dl}}{w-\mathrm{dw}}\&times;\mathrm{teff}\&times;(1+\frac{\mathrm{pvc}1}{(l-\mathrm{dl})\&times;{10}^6}\&times;|V_{\mathrm{SD}}|+\frac{\mathrm{pvc}2}{{(l-\mathrm{dl})}^2\&times;{10}^{12}}\&times;{V_{\mathrm{SD}}}^2)$

(formula 3)

$\&times;(1+(\mathrm{<figure-callout\; id="1"\; label="pv"\; filenames="HDA00002190570500022.png,HDA00002190570500042.png"\; state="\{\{state\}\}">pv</figure-callout>}1+\frac{\mathrm{pv}1l}{l-\mathrm{dl}}+\frac{\mathrm{pv}1w}{w-\mathrm{dw}})\&times;|V_{\mathrm{SS}}\left|\right)$

In the formula: reff represents the dc resistance of three end resistance, and unit is ohm; Rsh represents square resistance, and unit is ohms/square; L represents the length of three end resistance, and w represents the width of three end resistance, and dl represents the length offset amount of three end resistance, and dw represents the width offset of three end resistance, and the unit of l, w, dl and dw is micron; L-dl represents the effective length of three end resistance, and w-dw represents the effective width of three end resistance; V _SDRepresent voltage between three end resistance sources and the drain terminal, unit is volt; Pvc1 represents V _SDFor the first order influence coefficient of three end resistances, and pvc1 is relevant with the effective length of three end resistance; Pvc2 represents V _SDFor the second order influence coefficient of three end resistances, and pvc2 is relevant with the effective length of three end resistance; V _SSRepresent the voltage between three end resistance sources and the substrate terminal, unit is volt; Pv1l represents V _SSFor the first order influence coefficient of three end resistances, and pv1l is relevant with the effective length of three end resistance; Pv1w represents V _SSFor the first order influence coefficient of three end resistances, and pv1w is relevant with the effective width of three end resistance; Pv1 represents V _SSThe first order influence coefficient to three end resistances; Wherein, rsh, dl, dw, pvc1, pvc2, pv1l, pv1w and pv1 are the model parameters in the model of three end resistance DC characteristic.

Model parameter to the model of the DC characteristic of three end resistance is given initial value, then be based upon the model file of putting forward the three end resistance DC characteristic that mould software can identify, this model file comprises initial value, formula (1), formula (2) and the formula (3) of model parameter.

In step 501) in, the model parameter of the model of the DC characteristic of three end resistance is given initial value, is preferably: rsh=1, dl=0u, dw=0u, tc1=0, tc2=0, pvc1=0, pvc2=0, pv1=0, pv1l=0, pv1w=0.

Step 502) the three end Resistance model for prediction files that mould software can be identified are carried in establishment, this model file comprises macro model and the step 501 that step 10) is set up) in the model of three end resistance DC characteristic in model parameter, and with this model file and step 501) to be placed on the same file folder lower for the model file of the three end resistance DC characteristic that obtain.

Step 503) in carrying mould software, at first the preference pattern type is three end Resistance model for prediction, is written into step 30) the three end resistance test data files that obtain, carry mould software and form three end resistance test curves according to three end resistance test data files; Then be written into step 502) the middle three end Resistance model for prediction files that create, carry mould software and automatically generate three end resistance simulation curves according to this model file, then set-up procedure 502) model parameter in the three end Resistance model for prediction files that create in, change three end resistance simulation curves, until the root-mean-square error that three end resistance simulation curves and three end resistance test curves obtain is less than three end Resistance Fitting setting values, preserve at last step 502) in three end Resistance model for prediction files in model parameter, this model parameter is integrated circuit with the model of the DC characteristic of three end resistance.

Three end Resistance Fitting setting values can according to the design needs of integrated circuit, be predesignated a numerical value.The root-mean-square error that obtains when three end resistance simulation curves and three end resistance test curves is during less than this three ends Resistance Fitting setting value, just stop to adjust the model parameter in the three end Resistance model for prediction files, and preserve the model parameter in the three end Resistance model for prediction files at this moment.

Step 60) set up three end Resistance model for prediction files: with step 40) integrated circuit that obtains is with model and the step 50 of the AC characteristic of three end resistance) integrated circuit that obtains integrates with the model of the DC characteristic of three end resistance, make the three end Resistance model for prediction files that comprise three end resistance DC and AC characteristics for integrated circuit simulating software, in this three ends Resistance model for prediction file, the girth of two parasitic diodes is w+l, and area is w * l/2.

Step 70) resistance characteristic of three end resistance in the measurement integrated circuit: in integrated circuit simulating software, for three end resistance in the integrated circuit simulating, invocation step 60) the three end Resistance model for prediction files that obtain are measured the resistance characteristic of three end resistance under the alternating current-direct current signal function in the integrated circuit.

Below by the technical program and prior art are compared, the technical program premium properties is described.

Embodiment 1.

As shown in Figure 3, be that 6 μ m, length are the diode of 60 μ m to width, when probe temperature is 25 ℃, adopt test curve and the simulation curve fitted figure of " capacitance-voltage " characteristic that measuring method of the present invention obtains.Horizontal ordinate represents voltage, and unit is volt; Ordinate represents electric capacity, and unit is farad.Among the figure, [M] represents test curve, and [S] represents simulation curve.Among Fig. 3, the root-mean-square error RMS that match test curve and simulation curve reach is 0.731%.

Embodiment 2.

As shown in Figure 4, be that 6 μ m, length are the diode of 60 μ m to width, when probe temperature is 25 ℃, adopt test curve and the simulation curve fitted figure of " current-voltage " characteristic that measuring method of the present invention obtains.Horizontal ordinate represents voltage, and unit is volt; Ordinate represents electric current, and unit is ampere.Among the figure, [M] represents test curve, and [S] represents simulation curve.Among Fig. 4, the root-mean-square error RMS that reaches when match test curve and simulation curve is 1.332%.

Embodiment 3.

As shown in Figure 5, be that 5 μ m, length are the three end resistance of 100 μ m to width, be 25 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt step 50 in the measuring method of the present invention) three end resistance " resistance-V of obtaining _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve, RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Fig. 5, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 0.826%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 0.432%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 0.440%.

Embodiment 4.

As shown in Figure 6, be that 6 μ m, length are the three end resistance of 40 μ m to width, be 25 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt step 50 in the measuring method of the present invention) three end resistance " resistance-V of obtaining _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve.RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Fig. 6, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 0.401%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 0.283%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 0.232%.

Embodiment 5.

As shown in Figure 7, be that 5 μ m, length are the three end resistance of 100 μ m to width, be-40 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt step 50 in the measuring method of the present invention) three end resistance " resistance-V of obtaining _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve, RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Fig. 7, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 1.051%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 0.692%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 0.834%.

Comparative Examples 1.

As shown in Figure 8, be that 5 μ m, length are the three end resistance of 100 μ m to width, be 25 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt based on the integrated circuit of the model R3cmc measuring method with three end resistance, the three end resistance " resistance-V that obtain _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve, RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Fig. 8, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 1.781%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 1.033%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 2.791%.

Comparative Examples 2.

As shown in Figure 9, be that 6 μ m, length are the three end resistance of 40 μ m to width, be 25 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt based on the integrated circuit of the model R3cmc measuring method with three end resistance, the three end resistance " resistance-V that obtain _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve, RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Fig. 9, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 0.908%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 1.153%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 1.188%.

Comparative Examples 3.

As shown in figure 10, be that 5 μ m, length are the three end resistance of 100 μ m to width, be-40 ℃ at probe temperature, V _SSBe respectively 0V ,-2V and-during 4V, adopt based on the integrated circuit of the model R3cmc measuring method with three end resistance, the three end resistance " resistance-V that obtain _SD" test curve and the simulation curve fitted figure of characteristic.Horizontal ordinate represents voltage V _SD, unit is volt; Ordinate represents resistance, and unit is ohm.Among the figure, [M] represents test curve, and [S] represents simulation curve, RMS[V _SS=0V] expression V _SSDuring for 0V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-2V] expression V _SSDuring for-2V, the root-mean-square error of test curve and simulation curve match.RMS[V _SS=-4V] expression V _SSDuring for-4V, the root-mean-square error of test curve and simulation curve match.Among Figure 10, V _SSThe root-mean-square error that test curve during for 0V and simulation curve match reach is 0.933%; V _SSThe root-mean-square error that test curve during for-2V and simulation curve match reach is 1.764%; V _SSThe root-mean-square error that test curve during for-4V and simulation curve match reach is 1.857%.

Can find out from Fig. 3 and Fig. 4: the AC characteristic modeling of diode, use simulation curve that integrated circuit that the present invention proposes obtains with the measuring method of three end resistance resistance characteristics all can from different size, different probe temperature under test the test curve that obtains and basically overlap, the root-mean-square error that match reaches all about 1%, can reach very high degree of fitting.

Can find out from Fig. 5, Fig. 6 and Fig. 7: three end resistance DC characteristic modelings, use simulation curve that integrated circuit that the present invention proposes obtains with the measuring method of three end resistance resistance characteristics all can from different size, different probe temperature under test the test curve that obtains and basically overlap, the root-mean-square error that match reaches nearly all in 1%, can reach very high degree of fitting.

Thus, the method that proposes of the present invention can be measured integrated circuit very accurately with the resistance characteristic of three end resistance.

Can find out from Fig. 8, Fig. 9 and Figure 10: based on the measuring method of model R3cmc, the root-mean-square error that arrives when simulation curve and test curve match is almost all about 2%.

The method that Comprehensive Correlation Fig. 3 to Figure 10, the present invention propose with compare based on the measuring method of model R3cmc, not only carry mould parameter still less, measuring process is simple to operation, and has very high accuracy.Therefore, the integrated circuit of the present invention's proposition is more suitable for applying in engineering with the measuring method of three end resistances.

Claims (4)

1. an integrated circuit is with the measuring method of three end resistances, and it is characterized in that: this measuring method may further comprise the steps:

Step 10) set up integrated circuit with the macro model of three end resistance: this macro model is a circuit that contains source, drain terminal and three ports of substrate terminal, wherein, between source and drain terminal, be connected a resistance, be connected respectively a parasitic diode between source and substrate terminal and between drain terminal and substrate terminal, this macro model consists of three end resistance;

Step 20) makes up integrated circuit with the test structure of three end resistance: according to the integrated circuit of the step 10) foundation macro model with three end resistance, make up integrated circuit with the test structure of three end resistance, this test structure comprises three end resistance of different size, and different size, with three end resistance with finish under the technique and have the diode of same structure with the parasitic diode of three end resistance;

Step 30) set up Test Diode data file and three end resistance test data files: according to step 20) in the integrated circuit that makes up with the test structure of three end resistance, be made into chip, then test diode in this chip and the electrology characteristic of three end resistance, form Test Diode data file and three end resistance test data files;

Step 40) sets up integrated circuit with the model of the AC characteristic of three end resistance: in carrying mould software, at first the preference pattern type is the diode model, carry mould software and automatically generate the diode simulation curve according to the diode model, then be written into step 30) the Test Diode data file that obtains, carry mould software and form the Test Diode curve according to the Test Diode data file; Then adjust the model parameter in the diode model, change the diode simulation curve, until the root-mean-square error that diode simulation curve and Test Diode curve obtain is less than diode match setting value, preserve at last the model parameter of diode model, the model parameter of this diode model is integrated circuit with the model of the AC characteristic of three end resistance;

Step 50) set up integrated circuit with the model of the DC characteristic of three end resistance:

Step 501) three end resistances is carried out the correction of temperature, size, substrate bias, set up the model file of three end resistance DC characteristic;

Tempc=temper-25 (formula 1)

Teff=1+tc1 * tempc+tc2 * tempc ²(formula 2)

In the formula, tc1 represents the single order fitting parameter of temperature, tc2 represents the second-order fit parameter of temperature, temper represents the probe temperature of three end resistance, tempc represents the difference of three end resistance test temperature and room temperature, the unit of temper and tempc is degree centigrade, and teff represents that temperature is to the influence coefficient of three end resistances; Wherein, tc1 and tc2 are the model parameters in the model of three end resistance DC characteristic;

$\mathrm{reff}=\mathrm{rsh}\&times;\frac{l-\mathrm{dl}}{w-\mathrm{dw}}\&times;\mathrm{teff}\&times;(1+\frac{\mathrm{pvc}1}{(l-\mathrm{dl})\&times;{10}^6}\&times;|V_{\mathrm{SD}}|+\frac{\mathrm{pvc}2}{{(l-\mathrm{dl})}^2\&times;{10}^{12}}\&times;{V_{\mathrm{SD}}}^2)$

(formula 3)

$\&times;(1+(\mathrm{pv}1+\frac{\mathrm{pv}1l}{l-\mathrm{dl}}+\frac{\mathrm{pv}1w}{w-\mathrm{dw}})\&times;|V_{\mathrm{SS}}\left|\right)$

In the formula: reff represents the dc resistance of three end resistance, and unit is ohm; Rsh represents square resistance, and unit is ohms/square; L represents the length of three end resistance, and w represents the width of three end resistance, and dl represents the length offset amount of three end resistance, and dw represents the width offset of three end resistance, and the unit of l, w, dl and dw is micron; L-dl represents the effective length of three end resistance, and w-dw represents the effective width of three end resistance; V _SDRepresent voltage between three end resistance sources and the drain terminal, unit is volt; Pvc1 represents V _SDFor the first order influence coefficient of three end resistances, and pvc1 is relevant with the effective length of three end resistance; Pvc2 represents V _SDFor the second order influence coefficient of three end resistances, and pvc2 is relevant with the effective length of three end resistance; V _SSRepresent the voltage between three end resistance sources and the substrate terminal, unit is volt; Pv1l represents V _SSFor the first order influence coefficient of three end resistances, and pv1l is relevant with the effective length of three end resistance; Pv1w represents V _SSFor the first order influence coefficient of three end resistances, and pv1w is relevant with the effective width of three end resistance; Pv1 represents V _SSThe first order influence coefficient to three end resistances; Wherein, rsh, dl, dw, pvc1, pvc2, pv1l, pv1w and pv1 are the model parameters in the model of three end resistance DC characteristic;

Model parameter to the model of the DC characteristic of three end resistance is given initial value, then be based upon the model file of putting forward the three end resistance DC characteristic that mould software can identify, this model file comprises initial value, formula (1), formula (2) and the formula (3) of model parameter;

Step 502) the three end Resistance model for prediction files that mould software can be identified are carried in establishment, this model file comprises macro model and the step 501 that step 10) is set up) in the model of three end resistance DC characteristic in model parameter, and with this model file and step 501) to be placed on the same file folder lower for the model file of the three end resistance DC characteristic that obtain;

Step 503) in carrying mould software, at first the preference pattern type is three end Resistance model for prediction, be written into step 30) the three end resistance test data files that obtain, carry mould software and form three end resistance test curves according to three end resistance test data files, then be written into step 502) the middle three end Resistance model for prediction files that create, carry mould software and automatically generate three end resistance simulation curves according to this model file, then set-up procedure 502) model parameter in the three end Resistance model for prediction files that create in, change three end resistance simulation curves, until the root-mean-square error that three end resistance simulation curves and three end resistance test curves obtain is less than three end Resistance Fitting setting values, preserve at last step 502) in three end Resistance model for prediction files in model parameter, this model parameter is integrated circuit with the model of the DC characteristic of three end resistance;

Step 60) set up three end Resistance model for prediction files: with step 40) integrated circuit that obtains is with model and the step 50 of the AC characteristic of three end resistance) integrated circuit that obtains integrates with the model of the DC characteristic of three end resistance, make the three end Resistance model for prediction files that comprise three end resistance DC and AC characteristics for integrated circuit simulating software, in this three ends Resistance model for prediction file, the girth of two parasitic diodes is w+l, and area is w * l/2;

Step 70) resistance characteristic of three end resistance in the measurement integrated circuit: in integrated circuit simulating software, for three end resistance in the integrated circuit simulating, invocation step 60) the three end Resistance model for prediction files that obtain are measured the resistance characteristic of three end resistance under the alternating current-direct current signal function in the integrated circuit.

2. according to the measuring method of integrated circuit claimed in claim 1 with three end resistances, it is characterized in that: described step 30), test the electrology characteristic of the diode in this chip, comprise " electric current-voltage " family curve and " electric capacity-voltage " family curve that test different size diode obtains under different probe temperatures, form the Test Diode data file.

3. according to the measuring method of integrated circuit claimed in claim 1 with three end resistances, it is characterized in that: described step 30), the electrology characteristic of testing three end resistance in this chip is included in that loading range is that 0-5V, step-length are the voltage V of 0.1V between source and the drain terminal _SD, between substrate terminal and source loading range be 0--5V, step-length be the voltage V of-1V _SS, the test different size three " resistance-Vs of end resistance under different probe temperatures _SD" family curve, form three end resistance test data files.

4. according to the measuring method of integrated circuit claimed in claim 1 with three end resistances, it is characterized in that: described step 501), the model parameter of the model of the DC characteristic of three end resistance is given initial value and is: rsh=1, dl=0u, cdw=0u, tc1=0, tc2=0, pvc1=0, pvc2=0, pv1=0, pv1l=0, pv1w=0.

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