CN107066734B - Method for improving precision of non-silicified resistance model and non-silicified resistance model - Google Patents

Method for improving precision of non-silicified resistance model and non-silicified resistance model Download PDF

Info

Publication number
CN107066734B
CN107066734B CN201710241895.1A CN201710241895A CN107066734B CN 107066734 B CN107066734 B CN 107066734B CN 201710241895 A CN201710241895 A CN 201710241895A CN 107066734 B CN107066734 B CN 107066734B
Authority
CN
China
Prior art keywords
resistance
rend
silicified
model
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710241895.1A
Other languages
Chinese (zh)
Other versions
CN107066734A (en
Inventor
张志双
张昊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp
Priority to CN201710241895.1A priority Critical patent/CN107066734B/en
Publication of CN107066734A publication Critical patent/CN107066734A/en
Application granted granted Critical
Publication of CN107066734B publication Critical patent/CN107066734B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention provides a method for improving the precision of a non-silicified resistance model and the non-silicified resistance model, which divides the terminating resistance of leading-out ends at two ends of the resistance model into three parts consisting of contact resistance, silicified resistance and boundary resistance, and obtains the silicified resistance and the contact resistance of the non-silicified resistance model through the silicified resistance model so as to obtain the boundary resistance, thereby establishing the association between the non-silicified resistance model and the silicified resistance model, leading the non-silicified resistance model to be more physical and greatly improving the model precision. Meanwhile, layout parameters, namely the distance from the contact hole to the boundary of the silicified resistance region, are introduced into the silicified resistance of the non-silicified resistance model, so that the expansibility of the non-silicified resistance model can be improved.

Description

Method for improving precision of non-silicified resistance model and non-silicified resistance model
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for improving the precision of a non-silicified resistance model and the non-silicified resistance model.
Background
In the semiconductor industry, the performance of semiconductor devices and circuits in semiconductor integrated circuits is being studied by using modeling simulation technology. The resistor is one of the most basic components in a semiconductor integrated circuit, and there are many types of resistors, such as a silicided resistor (N + POLY silicide resistor), a P + silicided resistor (P + POLY silicide resistor), an N + silicided diffusion resistor (N + diffusion silicide resistor), a P + silicided diffusion resistor (P + diffusion silicide resistor), a P + non-silicided resistor (P + POLY silicide resistor), an N + non-silicided diffusion resistor (N + diffusion silicide resistor), and a P + non-silicided diffusion resistor (P + POLY silicide resistor). In modeling simulation techniques, data is generally extracted from the resistors individually in a corresponding software program based on test data of the semiconductor integrated circuit, a corresponding one of the resistor models is built, and without any relation between the resistor models, relevant parameters of the corresponding resistor model are input, and the parameters are used for subsequently simulating the performance of the resistor in various environmental parameters.
The resistor is generally a two-terminal structure, two terminals need to be connected with a contact hole structure and a metal lead wire so as to effectively connect the resistor to other circuits, the effective number of squares through which current passes is the number of squares between two terminals of the resistor, so that the analog resistance value is the length L and the width W of the resistor only need to be considered. At present, whether it is a silicide resistor or a non-silicide resistor, the extracted resistor model generally includes two parts, i.e., a pure resistor Rpure and a terminating resistor Rend, as shown in fig. 1, the pure resistor Rpure is a block resistor between two ends of the resistor, and the resistance value calculation formula is Rpure ═ Rsh × L/W, where Rsh is a block resistivity in Ω, L is an ideal block resistor length, W is an ideal block resistor width, and L and W are the same in unit, generally μm. The two ends of the resistor model are lead-out end parts formed by connecting the contact hole structure and the metal lead, fixed termination resistors Rend1 and Rend2 are generated respectively, and therefore the termination resistor Rend of the resistor model is Rend1+ Rend 2. For the silicidation resistance model, the termination resistance Rend is actually the contact resistance Rct, whereas for the non-silicidation resistance model, the termination resistance Rend actually has a silicidation resistance in addition to the contact resistance Rct. It can be seen that the terminating resistance Rend of the non-silicide resistor also includes a silicide resistor, but in the prior art, the non-silicide resistor and the silicide resistor are model data extracted separately based on test data of the semiconductor integrated circuit, and there is no correlation between the non-silicide resistor model and the silicide resistor model, thereby resulting in low precision of the non-silicide resistor model.
Disclosure of Invention
The invention aims to provide a method for improving the precision of a non-silicified resistance model and the non-silicified resistance model, which can establish the association between the non-silicified resistance model and the silicified resistance model, so that the non-silicified resistance model is relatively physical, and the expandability of the non-silicified resistance model is improved.
In order to solve the above problems, the present invention provides a method for improving the accuracy of a non-silicified resistor model, comprising the following steps:
obtaining the square resistivity of the contact resistance and the silicification resistance in a silicification resistance model;
the sheet resistivity of the contact resistance and the silicidation resistance are applied to a non-silicidation resistance model.
Optionally, the step of determining the resistivity of the contact resistance and the silicidation resistance in the silicidation resistance model includes:
according to formula R of the model of extracting silicification resistanceG＝RendG+RshG×LG/(WG+ Δ W) and a fixed width WGVarying the length LGCorresponding test data are obtained to obtain Delta LG[ Delta ] R and WGIs a relation ofG/ΔR＝(WG+ΔW)/RshGFurther obtaining the square resistivity of the silicide resistor RshGAnd a process width error Δ W, where Δ LGIs a length LGΔ R is equal to Δ LGCorresponding to RGThe amount of change in (c);
according to RendG＝RG-RshG×LG/(WG+ Δ W) and corresponding test data, to obtain RendGAnd WGRelational expression of (1)G＝RendG0/(WG+ΔW)+RCAnd further obtaining a parameter Rend of the contact resistance in the silicification resistance model G0、RCWherein RedGIs the contact resistance of the silicidation resistance model.
Optionally, the step of applying the sheet resistivity of the contact resistance and the silicidation resistance to a non-silicidation resistance model includes:
obtaining corresponding test data according to a formula R of an extracted non-silicified resistance model, wherein the formula R is Rend + Rsh multiplied by L/(W + delta W), the width W is fixed, and the length L is changed, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance, wherein the terminating resistance Rend comprises three parts of a contact resistance Rct, a silicified resistance Rsa and a boundary resistance Rin between a silicified resistance region and a non-silicified resistance region;
the parameter Rend of the contact resistance obtained in the silicification resistance model G0、RCApplying to the non-silicided resistance model to obtain a contact resistance Rct-Rct 0/(W + Δ W) + R of the non-silicided resistance modelC，Rct0＝Rend G0；
According to the square resistivity Rsh obtained in the silicification resistance modelGAnd obtaining a silicidation resistance Rsa (Rsa 0S/(W + delta W), Rsa0 (Rsa 0) of the non-silicidation resistance modelRshGThe layout parameter S of the silicification resistor is the distance from the contact hole to the boundary of the silicification resistor area;
and obtaining the corresponding boundary resistance Rin according to the Rend, the Rsa and the Rct and the formula Rin ═ Rend-Rsa-Rct.
Optionally, obtaining a relation Rin ═ Rin0/(W + Δ W) + R of Rin and W according to the obtained corresponding boundary resistance RinC1，RC1Is constant, Rin0 is constant.
The invention also provides a non-silicified resistance model, which comprises a non-silicified square resistor Rpure and a terminating resistor Rend, wherein the extraction formula of the square resistor is Rpure, Rsh, L/(W + delta W), Rsh is the square resistivity of the non-silicified resistor, L is the length of the non-silicified square resistor, W is the width of the non-silicified square resistor, and delta W is the process width error; the termination resistor Rend comprises a contact resistor Rct, a silicified resistor Rsa and a boundary resistor Rin between the silicified resistor region and the non-silicified resistor region, and the extraction formula of the contact resistor is that Rct is Rct0/(W + delta W) + RC，Rct0＝Rend G0, the extraction formula of the silicification resistance is Rsa 0S/(W + Δ W), Rct and Rsa are both obtained from the corresponding silicification resistance model, Rsa0 is the square resistivity of the silicification resistance, S is the layout parameter of the silicification resistance in the non-silicification resistance model, i.e. the distance from the contact hole to the boundary of the silicification resistance region, and the extraction formula of the boundary resistance is Rin0/(W + Δ W) + RC1，RC1Is constant, Rin0 is constant, Rend G0、RCAre parameters of the contact resistance in the silicidation resistance model.
Optionally, the step of obtaining the contact resistance Rct and the silicidation resistance Rsa from the corresponding silicidation resistance model includes:
according to formula R of the model of extracting silicification resistances＝Rends+Rshs×Ls/(Ws+ Δ W) and a fixed width WsVarying the length LsCorresponding test data are obtained to obtain Delta Ls[ Delta ] R and WsIs a relation ofs/ΔR＝(Ws+ΔW)/RshsTo obtain a silicified resistanceSquare resistivity RshsAnd process width error Δ W, RshsNamely Rsa0, to obtain a silicidation resistance Rsa of the non-silicidation resistance model Rsa 0S/(W + Δ W), where Δ LsIs a length LsΔ R is equal to Δ LsCorresponding to RsThe amount of change in (c);
according to Rends＝Rs-Rshs×Ls/(Ws+ Δ W) and corresponding test data, to obtain RendsAnd WsRelational expression of (1)s＝Rends0/(Ws+ΔW)+RCAnd further obtaining a parameter Rend of the contact resistance in the silicification resistance model s0、RCWherein RedsI.e. Rct, Rend s0, Rct0, thereby obtaining contact resistance Rct ═ Rct0/(W + Δ W) + R of the non-silicidated resistance modelC。
Optionally, the obtaining process of the boundary resistance Rin includes:
obtaining corresponding test data according to a formula R of extracting a non-silicified resistance model, wherein the formula R is Rend + Rsh multiplied by L/(W + delta W), the width W is fixed, and the length L is changed, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance;
obtaining corresponding boundary resistance Rin according to the Rend, the Rsa and the formula Rin ═ Rend-Rsa-Rct, and further obtaining a relational expression Rin ═ Rin0/(W + delta W) + R of Rin and WC1，RC1Is constant, Rin0 is constant.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the terminating resistance of the leading-out ends at the two ends of the non-silicified resistance model is divided into three parts consisting of contact resistance, silicified resistance and boundary resistance, so that the association between the non-silicified resistance model and the silicified resistance model can be established, namely the contact resistance and the silicified resistance of the non-silicified resistance model can be obtained in the silicified resistance model, the non-silicified resistance model is more physical, and the model precision is greatly improved.
2. The layout parameter, namely the distance from the contact hole to the boundary of the silicified resistance region is introduced into the silicified resistance of the non-silicified resistance model, so that the expansibility of the non-silicified resistance model can be improved.
Drawings
FIG. 1 is a schematic diagram of a conventional resistance model;
FIG. 2A is a schematic diagram of a non-silicided resistance model in accordance with an embodiment of the present invention;
FIG. 2B is an equivalent circuit diagram of a non-silicided resistance model in accordance with an embodiment of the present invention;
FIG. 3 is a comparison of a portion of parametric code in simulation software for a conventional non-silicided resistance model and a non-silicided resistance model of the present invention.
Detailed Description
The present invention will be described in more detail with reference to the accompanying drawings, which are included to illustrate embodiments of the present invention.
The core idea of the method for improving the precision of the non-silicified (unsilicided) resistance model (model) is that the terminating resistance Rend in the original non-silicified resistance model is subdivided into three parts, namely a contact resistance Rct, a silicified resistance Rsa and a boundary resistance Rin, the association between the non-silicified (unsilicided) resistance model and the corresponding silicified (salicided) resistance model can be established, for the corresponding silicified resistance model and the non-silicified resistance model, the Rct parts are the same, the resistivity of the silicified resistance square is the same, and therefore the Rsa and the Rct can be obtained in the silicified resistance model to be applied to the non-silicified resistance model, so that the non-silicified resistance model is compared physically, and meanwhile, a parameter S (the distance from a contact hole CT to the boundary of a silicified resistance region SAB) is introduced, and the expandability of the non-silicified resistance model is improved.
Referring to fig. 2A and 2B, the non-silicided resistor model of the present invention includes a non-silicided block resistor Rpure and a terminal having a contact hole CT connected to two ends of the non-silicided block resistor Rpure, respectively, and an extraction formula Rpure of the non-silicided block resistor Rsh × L/(W + Δ W), where Rsh is a non-silicided block resistivity, L is a length of the non-silicided block resistor, W is a width of the non-silicided block resistor, and Δ W is a process width error. The termination resistances of the two terminals are Rend1 and Rend2, respectively, and since the formation of the two terminals usually involves a silicidation process, Rend1 and Rend2 can be divided into three parts: the silicide resistors Rsa1, Rsa2, the contact resistors Rct1, Rct2, and the boundary resistors Rin1, Rin2 of the silicide resistor region and the non-silicide resistor region, that is, redd 1 ═ Rct1+ Rsa1+ Rin1, and redd 2 ═ Rct2+ Rsa2+ Rin 2. Since the resistors are generally passive and symmetrical structures, in the non-silicified resistance model, Rend1 ═ Rend2 ═ Rend/2, Rct1 ═ Rct2 ═ Rct/2, Rsa1 ═ Rsa2 ═ Rsa/2, Rin1 ═ Rin2 ═ Rin/2, Rend ═ Rend1+ Rend2 ═ Rct + Rsa + Rin, Rend is the sum of the termination resistances of the two terminals, i.e., the termination resistance of the non-silicified resistance model, Rsa is the sum of the silicified resistances of the two terminals, i.e., the silicified resistance of the non-silicified resistance model, Rct is the sum of the contact resistances of the two terminals, i.e., the contact resistance of the non-silicified resistance model, and Rin is the sum of the boundary resistances, i.e., the boundary resistance of the non-silicified resistance model.
Therefore, how to obtain the three parts of Rct, Rin and Rsa of Rend in the non-silicified resistance model is the key point of the technical scheme of the invention. First, we know that Rct is the same for both the silicidation resistance model and the non-silicidation resistance model with the same silicidation resistance square resistivity, and the non-silicidation resistance model includes the silicidation resistance Rsa, so we can first find Rsa and Rct in the corresponding silicidation resistance model, and then apply the found Rsa and Rct to the non-silicidation resistance model. The silicidation resistance model and the non-silicidation resistance model described herein are mainly the difference between silicidation and non-silicidation, for example, if the non-silicidation resistance model is an N + non-silicidation polysilicon resistor (N + POLY unsilicided resistor), then the silicidation resistance model is an N + silicidation polysilicon resistor (N + POLY silicidation resistor); the non-silicified resistance model is P + non-silicified polysilicon resistance (P + POLY unsilicided resistance), and the silicified resistance model is P + silicified polysilicon resistance (P + POLY salicided resistance); the non-silicidation resistance model is N + non-silicidation diffusion resistance (N + silicidation unsilicided resistance), and the silicidation resistance model is N + silicidation diffusion resistance (N + silicidation salicidation diffusion resistance); the non-silicide resistance model is a P + non-silicide diffusion resistance (P + diffusion silicide resistance), and the silicide resistance model is a P + silicide diffusion resistance (P + diffusion silicide resistance).
Accordingly, the present invention provides a method for improving the accuracy of a non-silicified resistance model, comprising the steps of:
firstly, obtaining the square resistivity of the contact resistance and the silicification resistance in a corresponding silicification resistance model;
the sheet resistivity of the contact resistance and the silicidation resistance are then applied to a non-silicidation resistance model.
For the silicidation resistance model:
first, an extraction formula R is obtained according to a conventional silicidation resistance modelG＝RendG+RshG×LG/(WG+ Δ W) and a fixed width WGVarying the length LGThe corresponding test data were obtained as follows:
RG1＝RendG+RshG*LG1/(W+ΔW)，
RG2＝RendG+RshG*LG2/(W+ΔW)，
from the above data, Δ L can be obtainedG[ Delta ] R and WGIs a relation ofG/ΔR＝(WG+ΔW)/RshG，ΔLG＝LG2-LG1Further obtaining the square resistivity of the silicide resistor RshGAnd process width error Δ W, RshGThe sheet resistivity of the silicided resistance in the non-silicided resistance model, Rsa 0;
then, according to the formula RendG＝RG-RshG×LG/(WG+ Δ W) and corresponding test data to obtain RendGAnd WGRelational expression RendG＝Rend G0/(WG+ΔW)+RCFurther, Rend is obtainedG0、RCWherein RedGIs the contact resistance Rct of the silicidation resistance model.
The following is for the non-silicidated resistance model:
firstly, according to an extraction formula R of a traditional non-silicified resistance model, which is Rend + Rsh × L/(W + Δ W), fixing the width W and changing the length L, corresponding test data is obtained, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance.
Since in the non-silicide resistance model, please refer to fig. 2A and fig. 2B, the terminating resistance Rend includes three parts, i.e., Rend ═ Rct + Rsa + Rin, of the contact resistance Rct, the silicide resistance Rsa, and the boundary resistance Rin between the silicide resistance region and the non-silicide resistance region, then, Rct, Rsa, Rin in the non-silicide resistance model need to be respectively found, specifically:
obtaining Rsa: the silicide resistance Rsa in the Rend part in the non-silicide resistance model is a small sheet resistance, and the layout parameter S, i.e. the distance from the contact hole CT 102 to the silicide block layer boundary 103 in fig. 2A, is introduced, so Rsa 0S/(W + Δ W), Rsa0 is the sheet resistivity Rsh obtained in the silicide resistance modelGThe layout parameter S is introduced to well cover all resistor layout areas, particularly the areas of different layouts from the contact hole CT 102 to the SAB boundary 103, so that the non-silicified resistor model has expansibility and the precision is greatly improved;
and (3) solving an Rct: since Rct is the same for both the non-silicided and silicided resistance models, Rct in the silicided resistance model is exactly the termination resistance RendG＝Rend G0/(WG+ΔW)+RCTherefore, the contact resistance Rct of the non-silicidation resistance model can be directly obtained by the silicidation resistance model, i.e., Rct-Rct 0/(W + Δ W) + Rc, Rct 0-Rend G0；
Rin calculation step: since Rct and Rsa of the non-silicidated resistance model are already determined, Rin can be determined from Rin ═ Rend-Rct-Rin, which can be described as Rin ═ Rin0/(W + Δ W) + RC1，Rin0、RC1Are all constants.
Through the above process, we find all the parameters Rct, Rin, Rsa required by the non-silicified resistance model, and then can fill in the non-silicified resistance model, as shown in fig. 3.
Referring to fig. 3, fig. 3 is a parameter code comparison graph of a currently-used non-silicified resistance model in simulation software and a non-silicified resistance model of the present invention, and it can be seen from fig. 3 that in the currently-used resistance model, the terminating resistance Rend is integrated into a whole, and is usually a fixed constant, that is, Rend θ is 23.465 as indicated in the left side of the diagram in fig. 3, while after the layout parameter S is introduced into the non-silicified resistance model of the present invention, the terminating resistance Rend is correspondingly split into three parts, that is, rct θ, rsa θ and rin θ as indicated in the right side of the diagram in fig. 3, so that the resistance value R of the resistance model is usually modified from Rend 7 + R1+ Rend2 (1e-6/weff) … + rsh (leff/weff) 3+ Rend/2 (1e-6/weff) + 1+ 3638 (1e 3638 + 3638) (refr) The resistance model of the present invention, i.e., r1+ r2+ r3 in the non-silicided resistance model of the present invention corresponds to the current usual bond 1 in the non-silicided resistance model, r5+ r6+ r7 in the non-silicided resistance model of the present invention corresponds to the current usual bond 2 in the current usual non-silicided resistance model, and see the associated boxes below the left and right side of the figure 3. The addition of the layout parameter S in the non-silicified resistance model can enable the non-silicified resistance model to have expansibility, meet the simulation requirements of different resistance layouts, establish association with the silicified resistance model and realize more accurate modeling and simulation.
Referring to fig. 2A, fig. 2B and fig. 3, the present invention further provides a non-silicided resistor model, which includes two parts, i.e., a non-silicided square resistor Rpure and a terminating resistor Rend, wherein the square resistor has an extraction formula Rpure ═ Rsh × L/(W + Δ W), Rsh is the square resistivity of the non-silicided resistor, L is the length of the non-silicided square resistor, W is the width of the non-silicided square resistor, and Δ W is the process width error; the termination resistor Rend comprises a contact resistor Rct, a silicified resistor Rsa and a boundary resistor Rin between the silicified resistor region and the non-silicified resistor region, and the extraction formula of the contact resistor is that Rct is Rct0/(W + delta W) + RCThe extraction formula of the silicification resistance is Rsa0 xs/(W + Δ W), Rct and Rsa are both obtained from the corresponding silicification resistance model, Rsa0 is the square resistivity of the silicification resistance, S is the silicification resistance layout parameter in the non-silicification resistance model, and the boundary is betweenThe formula of the resistance is Rin-Rin 0/(W + delta W) + RC1，RC1Is a constant.
Optionally, the step of obtaining the contact resistance Rct and the silicidation resistance Rsa from the corresponding silicidation resistance model includes:
according to formula R of the model of extracting silicification resistances＝Rends+Rshs×Ls/(Ws+ Δ W) and a fixed width WsVarying the length LsCorresponding test data are obtained to obtain Delta Ls[ Delta ] R and WsIs a relation ofs/ΔR＝(Ws+ΔW)/RshsFurther obtaining the square resistivity of the silicide resistor RshsAnd process width error Δ W, RshsNamely Rsa0, thereby obtaining a silicidation resistance Rsa of the non-silicidation resistance model Rsa 0S/(W + Δ W);
according to Rends＝Rs-Rshs×Ls/(Ws+ Δ W) and corresponding test data, to obtain RendsAnd WsRelational expression of (1)s＝Rend s0/(Ws+ΔW)+RCFurther, Rend is obtaineds0、RCWherein RedsI.e. Rct, Rend s0, Rct0, thereby obtaining contact resistance Rct ═ Rct0/(W + Δ W) + R of the non-silicidated resistance modelC。
The optional obtaining process of the interface resistance Rin includes:
obtaining corresponding test data according to a formula R of extracting a non-silicified resistance model, wherein the formula R is Rend + Rsh multiplied by L/(W + delta W), the width W is fixed, and the length L is changed, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance;
obtaining corresponding boundary resistance Rin according to the Rend, the Rsa and the formula Rin ═ Rend-Rsa-Rct, and further obtaining a relational expression Rin ═ Rin0/(W + delta W) + R of Rin and WC1，RC1Is a constant.
The technical scheme of the invention can be suitable for accurate modeling and simulation of N + non-silicified polysilicon resistors (N + polysilicon resistors), P + non-silicified polysilicon resistors (P + POLY unsilicided resistors), N + non-silicified diffusion resistors (N + diffusion unsilicided resistors), P + non-silicified diffusion resistors (P + diffusion unsilicided resistors) and other non-silicified resistors in an integrated circuit.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (5)

1. A method for improving the accuracy of a non-silicided resistance model, comprising the steps of:
obtaining the square resistivity of the contact resistance and the silicification resistance in a silicification resistance model;
applying the sheet resistivity of the contact resistance and the silicified resistance to a non-silicified resistance model;
the step of determining the resistivity of the contact resistance and the silicidation resistance in the silicidation resistance model includes:
according to formula R of the model of extracting silicification resistanceG＝RendG+RshG×LG/(WG+ Δ W) and a fixed width WGVarying the length LGCorresponding test data are obtained to obtain Delta LG[ Delta ] R and WGIs a relation ofG/ΔR＝(WG+ΔW)/RshGFurther obtaining the square resistivity of the silicide resistor RshGAnd a process width error Δ W, where Δ LGIs a length LGΔ R is equal to Δ LGCorresponding to RGThe amount of change in (c);
according to RendG＝RG-RshG×LG/(WG+ Δ W) and corresponding test data, to obtain RendGAnd WGRelational expression of (1)G＝RendG0/(WG+ΔW)+RCAnd further obtaining a parameter Rend of the contact resistance in the silicification resistance modelG0、RCWherein RedGA contact resistance of the silicidation resistance model;
the step of applying the sheet resistivity of the contact resistance and the silicidation resistance into a non-silicidation resistance model includes:
obtaining corresponding test data according to a formula R of an extracted non-silicified resistance model, wherein the formula R is Rend + Rsh multiplied by L/(W + delta W), the width W is fixed, and the length L is changed, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance, wherein the terminating resistance Rend comprises three parts of a contact resistance Rct, a silicified resistance Rsa and a boundary resistance Rin between a silicified resistance region and a non-silicified resistance region;
the parameter Rend of the contact resistance obtained in the silicification resistance modelG0、RCApplying to the non-silicided resistance model to obtain a contact resistance Rct-Rct 0/(W + Δ W) + R of the non-silicided resistance modelC，Rct0＝RendG0；
According to the square resistivity Rsh obtained in the silicification resistance modelGAnd obtaining a silicification resistance Rsa (Rsa 0S/(W + delta W), Rsa0 (Rsh) of the non-silicification resistance modelGThe layout parameter S of the silicification resistor is the distance from the contact hole to the boundary of the silicification resistor area;
and obtaining the corresponding boundary resistance Rin according to the Rend, the Rsa and the Rct and the formula Rin ═ Rend-Rsa-Rct.
2. The method according to claim 1, wherein the relation Rin-Rin 0/(W + Δ W) + R of Rin and W is obtained from the obtaining of the corresponding interface resistance RinC1，RC1Is constant, Rin0 is constant.
3. A non-silicified resistance model is characterized by comprising a non-silicified square resistor Rpure and a terminating resistor Rend, wherein the extraction formula of the square resistor is that Rpure is Rsh multiplied by L/(W + delta W), Rsh is the square resistivity of the non-silicified resistor, L is the length of the non-silicified square resistor, W is the width of the non-silicified square resistor, and delta W is the process width error; the termination resistor Rend includes a contact resistor Rct, a silicide resistor Rsa, and a resistance between the silicide resistor region and the non-silicide resistor regionThe boundary resistance Rin is three parts, and the extraction formula of the contact resistance is that Rct is Rct0/(W + delta W) + RC，Rct0＝RendG0, the extraction formula of the silicification resistance is Rsa 0S/(W + Δ W), Rct and Rsa are both obtained from the corresponding silicification resistance model, Rsa0 is the square resistivity of the silicification resistance, S is the layout parameter of the silicification resistance in the non-silicification resistance model, i.e. the distance from the contact hole to the boundary of the silicification resistance region, and the extraction formula of the boundary resistance Rin is Rin0/(W + Δ W) + RC1，RC1Is constant, Rin0 is constant, RendG0、RCAre parameters of the contact resistance in the silicidation resistance model.
4. The non-silicided resistance model of claim 3, wherein the step of obtaining the contact resistance Rct and silicided resistance Rsa from the corresponding silicided resistance model comprises:
according to formula R of the model of extracting silicification resistanceG＝RendG+RshG×LG/(WG+ Δ W) and a fixed width WGVarying the length LGCorresponding test data are obtained to obtain Delta LG[ Delta ] R and WGIs a relation ofG/ΔR＝(WG+ΔW)/RshGFurther obtaining the square resistivity of the silicide resistor RshGAnd process width error Δ W, RshGNamely Rsa0, to obtain a silicidation resistance Rsa of the non-silicidation resistance model Rsa 0S/(W + Δ W), where Δ LGIs a length LGΔ R is equal to Δ LGCorresponding to RGThe amount of change in (c);
according to RendG＝RG-RshG×LG/(WG+ Δ W) and corresponding test data, to obtain RendGAnd WGRelational expression of (1)G＝RendG0/(WG+ΔW)+RCAnd further obtaining a parameter Rend of the contact resistance in the silicification resistance modelG0、RCWherein RedGI.e. Rct, RendG0, Rct0, thereby obtaining contact resistance Rct ═ Rct0/(W + Δ W) + R of the non-silicidated resistance modelC。
5. The non-silicidated resistance model of claim 4, wherein the obtaining of the interface resistance Rin comprises:
obtaining corresponding test data according to a formula R of extracting a non-silicified resistance model, wherein the formula R is Rend + Rsh multiplied by L/(W + delta W), the width W is fixed, and the length L is changed, so as to obtain the square resistivity Rsh and the terminating resistance Rend of the non-silicified resistance;
obtaining corresponding boundary resistance Rin according to the Rend, the Rsa and the formula Rin ═ Rend-Rsa-Rct, and further obtaining a relational expression Rin ═ Rin0/(W + delta W) + R of Rin and WC1，RC1Is constant, Rin0 is constant.
CN201710241895.1A 2017-04-14 2017-04-14 Method for improving precision of non-silicified resistance model and non-silicified resistance model Active CN107066734B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710241895.1A CN107066734B (en) 2017-04-14 2017-04-14 Method for improving precision of non-silicified resistance model and non-silicified resistance model

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710241895.1A CN107066734B (en) 2017-04-14 2017-04-14 Method for improving precision of non-silicified resistance model and non-silicified resistance model

Publications (2)

Publication Number Publication Date
CN107066734A CN107066734A (en) 2017-08-18
CN107066734B true CN107066734B (en) 2020-06-16

Family

ID=59600277

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710241895.1A Active CN107066734B (en) 2017-04-14 2017-04-14 Method for improving precision of non-silicified resistance model and non-silicified resistance model

Country Status (1)

Country Link
CN (1) CN107066734B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110008551B (en) * 2019-03-26 2023-06-20 上海华力集成电路制造有限公司 Resistance model and extraction method thereof
CN112966387B (en) * 2021-03-15 2024-02-20 上海华力微电子有限公司 Modeling method for unit square resistance with fixed width

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1791980A (en) * 2003-05-19 2006-06-21 先进微装置公司 Method of forming resistive structures
CN101957874A (en) * 2010-07-16 2011-01-26 上海宏力半导体制造有限公司 Method for extracting resistor model
CN102254846A (en) * 2011-07-04 2011-11-23 上海宏力半导体制造有限公司 Method for simulating resistance of metal silicide layer in semiconductor device
CN102637215A (en) * 2011-02-10 2012-08-15 上海宏力半导体制造有限公司 Modeling method of semiconductor device
CN102890736A (en) * 2012-09-25 2013-01-23 东南大学 Measuring method for resistance of three-terminal resistors used for integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7519930B2 (en) * 2006-08-30 2009-04-14 Giga Hertz Technology Corp. Method of calculating a model formula for circuit simulation
JP5336984B2 (en) * 2009-09-17 2013-11-06 ルネサスエレクトロニクス株式会社 Circuit simulation method, circuit simulation apparatus, and program

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1791980A (en) * 2003-05-19 2006-06-21 先进微装置公司 Method of forming resistive structures
CN101957874A (en) * 2010-07-16 2011-01-26 上海宏力半导体制造有限公司 Method for extracting resistor model
CN102637215A (en) * 2011-02-10 2012-08-15 上海宏力半导体制造有限公司 Modeling method of semiconductor device
CN102254846A (en) * 2011-07-04 2011-11-23 上海宏力半导体制造有限公司 Method for simulating resistance of metal silicide layer in semiconductor device
CN102890736A (en) * 2012-09-25 2013-01-23 东南大学 Measuring method for resistance of three-terminal resistors used for integrated circuits

Also Published As

Publication number Publication date
CN107066734A (en) 2017-08-18

Similar Documents

Publication Publication Date Title
US8214784B2 (en) Accurate parasitic capacitance extraction for ultra large scale integrated circuits
US6854100B1 (en) Methodology to characterize metal sheet resistance of copper damascene process
US8826213B1 (en) Parasitic capacitance extraction for FinFETs
JP5491333B2 (en) Modeling and simulating device mismatch for integrated circuit design
CN107391849B (en) Resistance model and correction method thereof
JP2004086546A (en) Circuit simulation method
US20080021689A1 (en) Method for designing semiconductor integrated circuit and method of circuit simulation
CN109711037B (en) Resistance model and extraction method thereof
US20050124079A1 (en) Modeling process for integrated circuit film resistors
CN107066734B (en) Method for improving precision of non-silicified resistance model and non-silicified resistance model
US8204721B2 (en) Apparatus and method for emulation of process variation induced in split process semiconductor wafers
US10846451B1 (en) Methods of modelling irregular shaped transistor devices in circuit simulation
CN110674612B (en) Modeling method for parasitic capacitance and resistance of integrated circuit process back-end interconnection
CN106529080A (en) Establishment method for square resistor SPICE (Simulation Program with Integrated Circuit Emphasis) model
US20100037191A1 (en) Method of generating reliability verification library for electromigration
US8850374B2 (en) Method of reducing parasitic mismatch
US20040158805A1 (en) Parasitic capacitance extracting device and method for semiconductor integrated circuit
WO2012081158A1 (en) Circuit simulation method and semiconductor integrated circuit
JP3420102B2 (en) Model parameter extraction method
US7764077B2 (en) Semiconductor device including semiconductor evaluation element, and evaluation method using semiconductor device
CN111916444B (en) Electrical property analysis layout for finger-like structure fin field effect transistor
US6701492B2 (en) Method for the determination of resistances and capacitances of a circuit diagram, which represents an electrical circuit
KR100403624B1 (en) A proved extraction method for model parameter of SPICE
WO2023130552A1 (en) Device simulation method and device
CN112949241B (en) Resistor mismatch model and extraction method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant