CN112485529B - Impedance spectrum testing and fitting method of memristor - Google Patents

Impedance spectrum testing and fitting method of memristor Download PDF

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CN112485529B
CN112485529B CN202011343909.9A CN202011343909A CN112485529B CN 112485529 B CN112485529 B CN 112485529B CN 202011343909 A CN202011343909 A CN 202011343909A CN 112485529 B CN112485529 B CN 112485529B
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impedance spectrum
memristive device
impedance
memristor
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CN112485529A (en
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王德君
白娇
李月
谢威威
李苏洋
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Dalian University of Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0425—Test clips, e.g. for IC's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
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    • G01R31/2637—Circuits therefor for testing other individual devices

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Abstract

本发明属于微电子技术与半导体器件技术领域，一种忆阻器件的阻抗谱测试与拟合方法，其中，测试方法，包括以下步骤：(1)自制测量夹具，(2)连接阻抗分析仪与测试探针台，(3)设置阻抗分析仪测量环境，(4)忆阻器件低阻态阻抗谱的测试，(5)忆阻器件高阻态阻抗谱的测试。拟合方法，包括以下步骤：(1)确定忆阻器件阻抗谱的等效电路模型，(2)获得忆阻器件阻抗谱等效电路中各元件参数，(3)导出Zview软件中的原始数据与拟合数据到origin中作图。本发明可以快速获得忆阻器件的阻抗谱，为忆阻器件薄膜微结构的研究提供了测试与分析手段，可丰富忆阻系统物理机制理论及开关机制的研究。

Figure 202011343909

The invention belongs to the technical field of microelectronics and semiconductor devices, and relates to a method for testing and fitting an impedance spectrum of a memristive device, wherein the testing method includes the following steps: (1) self-made measuring fixtures, (2) connecting an impedance analyzer with Test the probe station, (3) set the impedance analyzer to measure the environment, (4) test the low resistance state impedance spectrum of the memristive device, and (5) test the high resistance state impedance spectrum of the memristive device. The fitting method includes the following steps: (1) determining the equivalent circuit model of the impedance spectrum of the memristive device, (2) obtaining the parameters of each element in the equivalent circuit of the impedance spectrum of the memristive device, (3) deriving the original data in the Zview software Plot with the fitted data to origin. The invention can quickly obtain the impedance spectrum of the memristive device, provides a test and analysis method for the study of the thin film microstructure of the memristive device, and can enrich the research on the physical mechanism theory and switching mechanism of the memristive system.

Figure 202011343909

Description

Impedance spectrum testing and fitting method of memristor
Technical Field
The invention relates to an impedance spectrum testing and fitting method of a memristor, and belongs to the technical field of microelectronic technology and semiconductor devices.
Background
The memristor has the advantages of small size, high reading and writing speed, low power consumption, nonvolatile storage, extremely high integration level, compatibility with a CMOS (complementary metal oxide semiconductor) process and the like, and is a fourth basic passive device. At present, the mature storage technologies such as SRAM, DRAM, Flash and the like all adopt transistors to construct storage bits, with the continuous increase of the integration degree of microelectronic technology and process, the size of the traditional CMOS process is gradually close to the physical limit, and the memory resistance device is likely to solve the problem of calculating a storage wall, so that the moore's law is continued.
The impedance spectrum measurement is developed and perfected for decades and has been widely applied in various scientific research and industrial production fields such as batteries, material characterization, electrical analysis and the like. The impedance measurement method has the advantages of wide measurement frequency range, high accuracy, evaluation and differentiation of the electrical properties of the material from different angles, and the like. In 2013, Wang Li Shi et al (patent number: CN 101871974B) of university of southern China invented a method for measuring impedance spectra, but the test frequency range can only achieve 1Hz-100kHz, and the method is not suitable for testing memristive systems.
However, the application of measurement and analysis of the impedance spectrum in the memristive system is still limited at home and abroad at present, the equivalent circuit is not unique, the physical interpretation of each part of the complex impedance spectrum is not clear, and the like, so that the analysis and the use of the impedance spectrum on the test characterization in the memristive system are limited. Based on the method, the universal measuring and fitting method for applying the impedance spectrum to the electrical performance analysis of the memristor system is provided, the research on the physical mechanism of the memristor system can be enriched, the commercial development of memristor devices is accelerated, and the Morel's law is continued.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to analyze the internal relation between the memristor impedance spectrum and a resistance switching mechanism and provide an effective and reasonable analysis means for the research of the internal physical mechanism of a memristor system, namely, a method for testing and fitting the impedance spectrum of the memristor is provided, and the rapid and accurate impedance spectrum testing and fitting are realized.
In order to achieve the above purpose and solve the problems existing in the prior art, the invention adopts the technical scheme that: an impedance spectrum testing method of a memristor comprises the following steps:
step 1, self-making a measuring clamp, namely reassembling the measuring clamp by adopting a German technology 16048H testing clamp, and specifically comprising the following substeps:
(a) the Lcur end and the Lpot end on the 16048H test fixture are connected through a T-shaped conversion head to form a first output port 101;
(b) connecting an Hcur end and an Hpot end on the 16048H test fixture through a T-shaped conversion head to form a second output port 102;
(c) connecting the first output port 101 through a triaxial conversion head to form a third output port 103;
(d) connecting the second output port 102 through a three-coaxial conversion head to form a fourth output port 104, and finishing the self-control of the measuring clamp;
step 2, connecting the impedance analyzer with the test probe station, placing a tested device into a vacuum chamber of the test probe station, connecting the end A of the self-made measurement clamp with an Aglient 4294A/Keithley E4990A/HP41 4192A impedance analyzer, connecting the output ports 103 and 104 in the end B of the self-made measurement clamp with the test probe station respectively, and realizing the connection of the impedance analyzer and the test probe station through the self-made measurement clamp;
step 3, setting a measuring environment of the impedance analyzer, initializing the impedance analyzer, configuring an adapter, and performing compensation calibration including open-circuit and short-circuit calibration;
step 4, testing the low-resistance-state impedance spectrum of the memristive device, connecting a test probe station with a Keithley4200-SCS/Keysight B1500A semiconductor parameter analyzer, and setting the limiting current to 10-120.105A, applying direct current voltage of 0.1-60V to the memristor to be tested, starting the memristor to change into a low-resistance state, connecting the impedance analyzer with the test probe station, setting the alternating current oscillation amplitude value to be 0.1-1.0V, the bias voltage to be 0.1-0.5V, setting the test frequency range to be 5Hz-110MHz, adjusting the display mode to be R-X/| Z | -theta/G-B, and finally transmitting the data to a computer end through a GPIB cable to acquire the data, thereby completing the test of the low-resistance state impedance spectrum of the memristor;
and step 5, testing a high-resistance-state impedance spectrum of the memristor, connecting a test probe station with a Keithley4200-SCS/Keysight B1500A semiconductor parameter analyzer, applying a direct-current voltage to the tested memristor to scan the range of-60-0V, inverting the memristor into a high-resistance state, connecting the impedance analyzer with the test probe station, setting the alternating-current oscillation amplitude value to be 0.1-1.0V, the bias voltage to be 0.1-0.5V, setting the test frequency range to be 5Hz-110MHz, adjusting the display mode to be R-X/| Z | -theta/G-B, and finally transmitting data to a computer end through a GPIB cable to finish testing the high-resistance-state impedance spectrum of the memristor.
An impedance spectrum fitting method of a memristor device adopting the testing method comprises the following steps:
step 1, determining an equivalent circuit model of a memristor impedance spectrum, obtaining test results of high and low resistance state impedance spectrums of the memristor and a circuit model proposed by related documents according to the test method, and determining the equivalent circuit model of the high and low resistance state impedance spectrums of the memristor;
step 2, obtaining parameters of each element in the memristor impedance spectrum equivalent circuit, and fitting the obtained memristor high-resistance state impedance spectrum data and low-resistance state impedance spectrum data obtained by the testing method through Zview software to obtain parameters of each element in the memristor high-resistance state impedance spectrum equivalent circuit and low-resistance state impedance spectrum equivalent circuit;
and 3, deriving the original data and the fitting data in the Zview software in the step 2, and mapping the original data and the fitting data into origin.
The invention has the beneficial effects that: a method for testing and fitting an impedance spectrum of a memristor device is provided, wherein the testing method comprises the following steps: (1) the method comprises the steps of (1) self-making a measuring clamp, (2) connecting an impedance analyzer with a test probe station, (3) setting a measuring environment of the impedance analyzer, (4) testing a low-resistance-state impedance spectrum of the memristive device, and (5) testing a high-resistance-state impedance spectrum of the memristive device. The fitting method comprises the following steps: (1) determining an equivalent circuit model of a memristor impedance spectrum, (2) obtaining parameters of each element in the memristor impedance spectrum equivalent circuit, and (3) deriving raw data and fitting data in Zview software to be plotted in origin. Compared with the prior art, the method can quickly obtain the impedance spectrum of the memristor, provides an effective test and analysis means for the research of the thin film microstructure of the memristor system, can enrich the research of the switch mechanism of the memristor system, and has very important research significance for perfecting the internal physical mechanism of the memristor system.
Drawings
FIG. 1 is a flow chart of the steps of the impedance spectroscopy test method of the present invention.
FIG. 2 is a schematic connection diagram of the self-made measuring fixture manufacturing process of the present invention.
FIG. 3 is a flow chart of the steps of the impedance spectrum fitting method of the present invention.
FIG. 4 is a TiN/HfO2A direct current-voltage characteristic curve diagram of a high-resistance state and a low-resistance state of a/TiN-structure memristor is shown.
FIG. 5 is a TiN/HfO2A curve graph of a real part and an imaginary part of an impedance spectrum with frequency change is formed when the memristor device of a TiN structure is in a low-resistance state.
FIG. 6 is a TiN/HfO2A curve graph of a real part and an imaginary part of an impedance spectrum with frequency change is formed when the memristor device of a TiN structure is in a high-resistance state.
FIG. 7 is a TiN/HfO2An equivalent circuit model diagram of a low-resistance-state impedance spectrum of a memristor with a TiN structure.
FIG. 8 is a TiN/HfO2The fitting result of a low-resistance-state impedance spectrum of the memristor with the TiN structure is shown.
FIG. 9 is a TiN/HfO2An equivalent circuit model diagram of a high-resistance-state impedance spectrum of a memristor with a TiN structure.
FIG. 10 is a TiN/HfO2The fitting result of a high-resistance-state impedance spectrum of the memristor with the TiN structure is shown.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, a method for testing an impedance spectrum of a memristive device includes the following steps:
step 1, self-making a measuring clamp, namely reassembling the measuring clamp by adopting a German technology 16048H testing clamp, and specifically comprising the following substeps:
(a) the Lcur end and the Lpot end on the 16048H test fixture are connected through a T-shaped conversion head to form a first output port 101;
(b) connecting an Hcur end and an Hpot end on the 16048H test fixture through a T-shaped conversion head to form a second output port 102;
(c) connecting the first output port 101 through a triaxial conversion head to form a third output port 103;
(d) the second output port 102 is connected through a triaxial adapter to form a fourth output port 104, the measurement fixture is self-made, and the connection schematic diagram of the manufacturing process is shown in fig. 2.
Step 2, connecting an impedance analyzer and a test probe station, and combining TiN/HfO2the/TiN-structure memristor is placed in a vacuum chamber of a test probe station, and the A end of the self-made measuring clamp is connected with an Aglient 4294A impedance analyzerAnd output ports 103 and 104 in the B end of the self-made measuring clamp are respectively connected with the test probe station, and the impedance analyzer is connected with the test probe station through the self-made measuring clamp.
Step 3, setting a measuring environment of the impedance analyzer, initializing the impedance analyzer, configuring an ADAPTER, selecting ADAPTER [ ] - [ NONE ], and then performing compensation calibration, including open-circuit and short-circuit calibration; open circuit calibration: [ Cal ] -FIXTURE COMPEN-OPEN, OPEN ON OFF to OPEN ON OFF; short circuit calibration: the home-made measurement FIXTURE was attached to the test probe station and the two probes were gently touched, [ Cal ] -FIXTURE COMPEN-SHORT, SHORT ON OFF was changed to SHORT ON OFF.
Step 4, testing the memristor low-resistance-state impedance spectrum, connecting a test probe station with a Keithley4200-SCS semiconductor parameter analyzer, setting the limiting current to be 0.1nA, and testing the TiN/HfO to be tested2The method comprises the steps of applying a direct-current voltage of 0-3V to a memristor device with a TiN structure, starting the memristor device, changing the memristor device into a low-resistance state, connecting an impedance analyzer with a test probe station as shown by a black solid line in figure 4, setting the alternating-current oscillation amplitude to be 100mV, the bias voltage to be 100mV, and setting the test frequency range to be 40Hz-10MHz, wherein the specific operation method is [ Sweep]-PARAMETER[]-FREQ-[Start]-40Hz-[Stop]-10M, adjusting the display mode to be R-X, and specifically operating the method to be display]-[R-X]Finally, the data is transmitted to a computer end through a GPIB cable to acquire data, and the TiN/HfO is finished2Testing a low-resistance state impedance spectrum of the memristor with the TiN structure; TiN/HfO2The variation curve of the real part and the imaginary part of the impedance spectrum in the low-resistance state of the memristor device with the TiN structure along with the frequency is shown in FIG. 5.
Step 5, testing the high-resistance-state impedance spectrum of the memristor, connecting a test probe station with a Keithley4200-SCS semiconductor parameter analyzer, and testing the TiN/HfO to be tested2The applied direct-current voltage of the memristor with the TiN structure is in a scanning range of-3-0V, the memristor is turned into a high-resistance state, as shown by a dotted line in figure 4, the impedance analyzer is connected with the test probe station, the alternating-current oscillation amplitude is set to be 100mV, the bias voltage is set to be 100mV, the test frequency range is set to be 40Hz-20MHz, and the specific operation method is [ Sweep]-PARAMETER[]-FREQ-[Start]-40Hz-[Stop]-20M, adjusting display modeFor R-X, the specific operating method is display]-[R-X]Finally, the data is transmitted to a computer end through a GPIB cable to acquire data, and the TiN/HfO is finished2And testing a high-resistance-state impedance spectrum of the memristor with the TiN structure. TiN/HfO2The variation curve of the real part and the imaginary part of the impedance of the memristor device in a high-impedance state along with the frequency is shown in FIG. 6.
As shown in fig. 3, a method for fitting an impedance spectrum of a memristive device includes the following steps:
step 1, determining an equivalent circuit model of a memristor impedance spectrum, and obtaining TiN/HfO according to the memristor impedance spectrum testing method2The test result of the low-resistance-state impedance spectrum of the memristor device with the TiN structure is shown as a hollow circular curve in fig. 8, and the TiN/HfO is determined2A model diagram of a low-resistance-state impedance spectrum equivalent circuit of a memristor device with a TiN structure is shown in FIG. 7, and the model diagram is formed by a resistor RPAnd a capacitor CPConnected in parallel and then connected with a resistor RS1Are connected in series; the obtained test result of the high-resistance-state impedance spectrum of the memristive device is shown as a hollow rectangular curve in FIG. 10, and TiN/HfO is determined2A model diagram of a high-resistance-state impedance spectrum equivalent circuit of a memristor device with a TiN structure is shown in figure 9 and is formed by parallel components R2C2With parallel component R1C1After being connected in series with RS2Are connected in series.
Step 2, obtaining parameters of each element in the memristor impedance spectrum equivalent circuit, and testing the obtained TiN/HfO by using the memristor impedance spectrum testing method2Fitting high and low resistance state impedance spectrum data of the memristor with the TiN structure through Zview software to obtain parameters of each element in the high and low resistance state impedance spectrum equivalent circuits of the memristor. Wherein: TiN/HfO2The parameters of each element in the low-resistance-state impedance spectrum equivalent circuit of the memristor with the TiN structure are shown in Table 1. TiN/HfO2The parameters of each element in the high-resistance-state impedance spectrum equivalent circuit of the memristor with the TiN structure are shown in Table 2.
And 3, deriving the original data and the fitting data in the Zview software in the step 2 to origin for drawing, wherein: TiN/HfO2Fitting result diagram of low-resistance-state impedance spectrum of memristor with TiN structureTiN/HfO as shown in FIG. 82The fitting result chart of the high-resistance-state impedance spectrum of the memristor with the TiN structure is shown in FIG. 10.
TABLE 1
Component Value of Error of fit Percentage of error
RS1 297.4 3.4603 1.1635
RP 6127 42.179 0.688
CP 2.05E-10 1.19E-12 0.251
TABLE 2
Component Value of Error of the measurement Percentage of error
RS2 131.7 13.387 10.165
R1 292.4 13.838 5.7585
C1 6.17E-11 6.405E-12 10.377
R2 237.2 80.619 33.988
C2 1.77E-09 6.687E-10 37.769

Claims (2)

1.一种忆阻器件的阻抗谱测试方法，其特征在于，包括以下步骤：1. an impedance spectrum testing method of a memristive device, is characterized in that, comprises the following steps: 步骤1、自制测量夹具，采用是德科技16048H测试夹具，重新组装，具体包括以下子步骤：Step 1. Self-made measuring jig, using Keysight 16048H test jig, re-assemble, including the following sub-steps: （a）将16048H测试夹具上的Lcur端与Lpot端经过T型转换头连接，形成第一个输出端口101；(a) Connect the Lcur end and the Lpot end on the 16048H test fixture through the T-type adapter to form the first output port 101; （b）将16048H测试夹具上的Hcur端与Hpot端经过T型转换头连接，形成第二个输出端口102；(b) Connect the Hcur end and the Hpot end on the 16048H test fixture through the T-type adapter to form the second output port 102; （c）将第一个输出端口101经过三同轴转换头连接，形成第三个输出端口103；(c) connecting the first output port 101 through a triaxial conversion head to form a third output port 103; （d）将第二个输出端口102经过三同轴转换头连接，形成第四个输出端口104，测量夹具自制完成；(d) Connect the second output port 102 through a triaxial conversion head to form a fourth output port 104, and the measurement fixture is self-made; 步骤2、连接阻抗分析仪与测试探针台，将被测器件放入测试探针台的真空腔室中，再将自制测量夹具的A端与Aglient 4294A/Keithley E4990A/HP4192A阻抗分析仪相连，自制测量夹具的B端中的103、104输出端口分别与测试探针台相连，通过自制测量夹具实现阻抗分析仪与测试探针台的连接；Step 2. Connect the impedance analyzer to the test probe station, put the device under test into the vacuum chamber of the test probe station, and then connect the A terminal of the self-made measurement fixture to the Aglient 4294A/Keithley E4990A/HP4192A impedance analyzer. The output ports 103 and 104 in the B end of the self-made measurement fixture are respectively connected to the test probe station, and the impedance analyzer and the test probe station are connected through the self-made measurement fixture; 步骤3、设置阻抗分析仪测量环境，首先对阻抗分析仪初始化，然后进行适配器配置，接着进行补偿校准，包括开路与短路的校准；Step 3. Set the impedance analyzer measurement environment, first initialize the impedance analyzer, then configure the adapter, and then perform compensation calibration, including the calibration of open circuit and short circuit; 步骤4、忆阻器件低阻态阻抗谱的测试，将测试探针台与Keithley 4200-SCS/KeysightB1500A半导体参数分析仪连接，设置限制电流为10-12-0.105A，对被测的忆阻器件施加直流电压0.1-60 V，忆阻器件开启，变为低阻态，再将阻抗分析仪与测试探针台连接，设置交流振荡幅值为0.1-1.0V，偏压为0.1-0.5V，设置测试频率范围为5Hz-110MHz，调节显示方式为R-X/|Z|-θ/G-B，最后，通过GPIB电缆传输到电脑端采集数据，完成对忆阻器件低阻态阻抗谱的测试；Step 4. To test the low-resistance impedance spectrum of the memristive device, connect the test probe station to the Keithley 4200-SCS/KeysightB1500A semiconductor parameter analyzer, and set the limit current to 10 -12 -0.105A. Apply a DC voltage of 0.1-60 V, the memristive device is turned on and becomes a low-resistance state, then connect the impedance analyzer to the test probe station, set the AC oscillation amplitude to 0.1-1.0V, and the bias voltage to 0.1-0.5V. Set the test frequency range to 5Hz-110MHz, adjust the display mode to RX/|Z|-θ/GB, and finally transmit the data to the computer through the GPIB cable to complete the test of the low-resistance impedance spectrum of the memristive device; 步骤5、忆阻器件高阻态阻抗谱的测试，将测试探针台与Keithley 4200-SCS/KeysightB1500A半导体参数分析仪连接，对被测的忆阻器件施加直流电压扫描范围为-60-0V，忆阻器件翻转为高阻态，再将阻抗分析仪与测试探针台连接，设置交流振荡幅值为0.1-1.0V，偏压为0.1-0.5V，设置测试频率范围为5Hz-110MHz，调节显示方式为R-X/|Z|-θ/G-B，最后，通过GPIB电缆传输到电脑端采集数据，完成对忆阻器件高阻态阻抗谱的测试。Step 5. To test the high-resistance impedance spectrum of the memristive device, connect the test probe station to the Keithley 4200-SCS/KeysightB1500A semiconductor parameter analyzer, and apply a DC voltage to the measured memristive device with a sweep range of -60-0V. The memristive device is turned into a high-impedance state, then connect the impedance analyzer to the test probe station, set the AC oscillation amplitude to 0.1-1.0V, the bias voltage to 0.1-0.5V, and set the test frequency range to 5Hz-110MHz. The display mode is R-X/|Z|-θ/G-B. Finally, the data is transmitted to the computer terminal through the GPIB cable to complete the test of the high-resistance impedance spectrum of the memristive device. 2.一种采用如权利要求1所述的测试方法的忆阻器件的阻抗谱拟合方法，其特征在于，包括以下步骤：2. An impedance spectrum fitting method of the memristive device using the test method as claimed in claim 1, characterized in that, comprising the following steps: 步骤1、确定忆阻器件阻抗谱的等效电路模型，根据权利要求1得到的忆阻器件高、低阻态阻抗谱的测试结果，确定忆阻器件高、低阻态阻抗谱的等效电路模型；Step 1. Determine the equivalent circuit model of the impedance spectrum of the memristive device, and determine the equivalent circuit of the impedance spectrum of the memristive device in the high and low resistance states according to the test results of the impedance spectrum in the high and low resistance states of the memristive device obtained in claim 1 Model; 步骤2、获得忆阻器件阻抗谱等效电路中各元件参数，将权利要求1测试得到的忆阻器件高、低阻态阻抗谱数据经过Zview软件进行拟合，得到忆阻器件高、低阻态阻抗谱等效电路中各元件参数；Step 2. Obtain the parameters of each element in the equivalent circuit of the impedance spectrum of the memristive device, and fit the impedance spectrum data of the high and low resistance states of the memristive device tested in claim 1 through Zview software to obtain the high and low resistance of the memristive device. The parameters of each element in the equivalent circuit of the state impedance spectrum; 步骤3、导出步骤2中Zview软件内的原始数据与拟合数据到origin中作图。Step 3. Export the original data and fitted data in the Zview software in step 2 to origin for drawing.
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