CN102884616B - 用于夹持晶片状物体的装置 - Google Patents
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Abstract
一种用于夹持半导体晶片的旋转卡盘,所述旋转卡盘包括一个或多个阻尼机构,所述阻尼机构用来限制卡盘顶针用于作用于5个晶片移动之后的晶片边缘的力。所述阻尼机构可以是线性阻尼器或旋转阻尼器。所述一个或多个阻尼器安装在盘体的表面上,并且包括接触公用齿环的控制臂,在径向地向内和向外运动期间,所述公用齿环轮流驱动卡盘顶针。
Description
背景技术
本发明涉及用于夹持诸如半导体晶片等晶片状物体的装置。
半导体晶片要经受诸如蚀刻、清洁、抛光和材料沉积等各种表面处理过程。为了适应这些过程,通过使用与可旋转的载体关联的卡盘可以支撑与一个或多个处理流体喷嘴相对的单晶片,这已在如美国专利No.4,903,717和No.5,513,668中进行了描述。
上面引用的专利是在伯努利(Bernoulli)原理的基础上进行操作的,使得晶片通过气垫而不是通过接触卡盘来从下面获得支撑。然而这种卡盘通常包括圆形系列的顶针(pin),该些顶针相对于放置在卡盘上的晶片径向向外定位。这些顶针防止晶片相对于卡盘的横向位移。
如在美国专利No.4,903,717中所描述的,构建顶针使每一个从各自的旋转基底向上伸出也是有利的。顶针的轴线和基底是垂直的但是相互偏离,以致基底的旋转引起相应的顶针沿着圆形的弧线运行,并且因此在其径向位置是可调整的。提供的旋转基底的每一个都带有轮齿,该轮齿与公用齿环的齿啮合,该公用齿环与卡盘的旋转轴是同轴的。因此该齿环相对于卡盘的旋转导致所有的顶针共同地和相同程度地移动。
这种构建使得顶针能向外径向移动以便放置和移走晶片,然后向内径向移动以接触晶片的外围边缘。这种接触不仅防止晶片相对于卡盘的横向位移,而且防止在卡盘旋转时在晶片与卡盘之间的相对旋转。
晶片相对于卡盘的旋转被称为“晶片移动”(“wafershift”)。然而通常不期望晶片和卡盘彼此相对移动,因此需要可控的晶片移动数量来确保在顶针接触晶片的范围内的晶片斜面的正确的清洗和/或蚀刻。这涉及到在清洗以及蚀刻步骤期间,将晶片相对于卡盘移动数度。该晶片移动在特定的时间间隔内实施。在这个时间间隔内,卡盘内的齿环打开卡盘的顶针,然后晶片移动。齿环借助弹簧弹力返回。
对于在处理模块内用于单晶片湿法处理的旋转卡盘,如由朗姆研究公司(LamResearchCorporation)制造的旋转卡盘,在处理步骤期间,可以通过加速或减速卡盘完成晶片移动。也就是说,驱动卡盘顶针的齿环的惯性是指在卡盘的加速和减速期间,在齿环和卡盘主体之间存在轻微的相对旋转,这引起顶针进行打开和闭合运动,并且随着卡盘的加速或减速释放晶片几毫秒。在这个间隔内,晶片没有被夹紧并且相对于卡盘旋转数度。同样地,如果驱动齿轮而不是驱动卡盘基体,则卡盘基体的惯性引起卡盘基体与齿轮的相对运动,对卡盘顶针产生同样的效果。
发明内容
本发明的发明人已经发现,在上面所述的类型的卡盘中,顶针闭合非常快,这会导致过度磨损,并且久而久之,会在顶针内形成凹槽。这可以导致缩减卡盘的工作寿命,以及在晶片处理期间破坏所需的可控的晶片移动。
根据本发明,用于夹持诸如半导体晶片等晶片状物体的装置,其配备有阻尼机构,该阻尼机构控制该装置的接触元件作用于工件的力。本发明的优选的实施方式是旋转卡盘,尤其是用于单晶片湿法处理的处理模块内的旋转卡盘,其中当卡盘顶针恢复与晶片移动之后的该晶片的接触时,该阻尼机构控制和限制该卡盘顶针作用于该晶片边缘的力。
附图说明
在参考附图阅读本发明的优选的实施方式的以下详细说明之后,本发明的其他目标、特征和优势将变得更加明显,其中:
图1为根据本发明的实施方式从带有处于适当位置的晶片的卡盘的上面所视的示意性透视图;
图2为从图1的卡盘的下面所视的示意性透视图,在图中下基体已经移除,并且对应于该状态,在图中晶片已经被卡盘顶针夹住;
图3为类似于图2的视图,但是对应于该状态,在图中晶片没有被卡盘顶针夹住;
图4A为处于卡盘打开位置的阻尼机构51的示意性剖视图;
图4B为处于卡盘闭合位置的阻尼机构51的示意性剖视图;
图5A为处于卡盘打开位置的阻尼机构51的可替换的实施方式的示意性剖视图;以及
图5B为处于卡盘闭合位置的阻尼机构51的可替换的实施方式的示意性剖视图。
具体实施方式
在图1中,卡盘10处于工作位置,这意味着顶针25夹持着晶片W。圆形的箭头表明了卡盘是顺时针旋转的。卡盘10包括上基体11(upperbasebody)和下基体12(lowerbasebody)。晶片被一系列的顶针组件23在外围夹持,每个顶针组件都包括偏心地安装的(eccentricallymounted)卡盘顶针25。如上所述,当顶针组件23围绕着它的轴(平行于卡盘的旋转轴)旋转时,顶针25移向晶片边缘以及从晶片边缘移开。
卡盘10优选是伯努利卡盘(Bernoullichuck),在伯努利卡盘内,晶片漂浮在由许多气体喷嘴(未显示)提供的气垫上,并且由于伯努利效应,由气垫从下面支撑。
在图2中,圆形的箭头再次描绘了卡盘的顺时针旋转,但由于在该图中是从下面显示卡盘的,因而箭头本身是朝逆时针方向的。为便于说明,没有显示下基体12。因此,在图2中,不仅上基体11和顶针组件23是可见的,环形齿轮30也是可见的,该环形齿轮30的齿37与在每个顶针组件23的下部形成的齿27啮合。
螺旋弹簧43的一端连接到环形齿轮30各自的辐条32,并且其相反的端连接到上基体11上。弹簧43促使环形齿轮30相对于上基体旋转,使得顶针组件23转动,从而将顶针25带到它们的径向内部位置(所述“闭合位置”,见图1和图2所示),在该位置顶针25接触晶片W。
如上所述,卡盘基体被连接到驱动轴(未显示),并且当沿所示的顺时针方向驱动卡盘时,在卡盘加速期间,环形齿轮30的惯性将导致顶针25瞬间打开。相反地,当卡盘沿逆时针方向旋转时,为了瞬间打开顶针,卡盘必须减速。
用于受控的晶片移动的标准的角加速度将为3200deg/s2。
如上所述,本发明的发明人已经发现,随着齿环在卡盘加速或减速期间从打开位置返回到闭合位置,尤其当是在有弹簧43的辅助时,卡盘顶针25与晶片W的外围边缘的不受控制的碰撞逐渐地损害顶针。
为了延长顶针的寿命和/或获得更稳定的移动性能,在卡盘上安装阻尼系统。特别是,这个实施方式包括将阻尼器51安装到上基体11上。阻尼器包括杆53,阻尼器内的螺旋弹簧将所述杆53朝向伸出(“向外伸臂”)位置推动。当卡盘闭合时,顶针25接触晶片边缘,阻尼器的杆53与齿环30邻近的辐条32相接触,然而,杆53优选不固定到辐条32上。
在图3中,卡盘处于打开位置,这意味着顶针25没有夹持晶片,因此晶片可以相对于卡盘自由旋转。图3中的圆形箭头再次显示了卡盘的加速顺时针旋转。由于环形齿轮30的惯性,环形齿轮30相对于卡盘10的基体12逆时针旋转(尽管仍然顺时针旋转)。该逆时针方向相对运动克服螺旋弹簧43的力实施,该螺旋弹簧43的力通常推动环形齿轮向闭合位置旋转移动。因此顶针组件23顺时针旋转几分之一秒,并且顶针25释放晶片。图3显示了卡盘位于卡盘刚刚加速并且齿轮尚未跟着加速的位置。如在图3所见,阻尼器51的杆53还没有伸出去,因此还没有接触到辐条32。
当向闭合位置收回齿轮30时,辐条32将接触早已伸出了一点点的杆53。因此慢慢伸出的杆53就阻止了齿轮随着卡盘的快速运动,使得阻尼器51因此限制了齿轮向闭合位置运动的速度。
顶针的闭合步骤在晶片移动期间由齿环的惯性和弹簧弹力驱动。在具有六个卡盘顶针的传统的旋转卡盘中,必须由六个卡盘顶针分散的总的闭合能量已确定为是0.246Nm。由于技术方面的考虑,可以假定这个能量转换为弹性能量、塑性能量和“磨损能量”(顶针的高分子材料的磨耗和裂纹形成)。
此外,由于顶针弯曲以及晶片和顶针之间的高接触力,使传统的旋转卡盘在一个处理期间内不能实行多晶片移动变为可能。这些多晶片移动失灵的根本原因被认为是死锁,所述死锁是由于顶针弯曲以及由高压紧力造成的高摩擦力引起的。
根据本发明的阻尼器系统减少了必须由卡盘顶针分散的能量的量。安装在某些方面类似于减震器的阻尼器系统和/或旋转制动器,以减少或消除在晶片移动期间的闭合能量。此外,阻尼器优选是可调节的,并且发明者已经确定由阻尼器分散的能量大致是“阻尼器行程”的线性函数。因此,“阻尼器行程”和由阻尼机构分散的能量是可以控制的。目前优选的能量分散目标范围是在理论闭合能量的20到80%之间。
设计阻尼元件以便阻尼元件的闭合速度不超过约1cm/s(0.01m/s)。
减少和控制晶片移动的进一步的可能性涉及到旋转制动器的使用。旋转制动器能够在两个方向上起作用。这意味着在环形齿轮的打开运动和闭合运动期间,制动器生成与环形齿轮的运动相反的力。通过使用不同的旋转制动器以及在卡盘内部进行不同的调整,可以调整制动力矩。
在晶片移动期间,晶片的任何轴向运动都可以通过使用伯努利卡盘避免,在伯努利卡盘内,晶片漂浮在气垫上并且由于伯努利效应同时被所述气垫托持。可替代地,在晶片移动期间,晶片的任何轴向运动都可以通过使用扇形的或蘑菇形的顶针避免。
图4A和4B描述了阻尼机构51在卡盘的打开位置(图4A)和闭合位置(图4B)。提供了带有放大的头55的杆53来接触环形齿轮30的相邻的辐条32。在阻尼机构51的外壳内,杆53通过连接板靠压在螺旋弹簧57上。螺旋弹簧57的弹簧弹力小于螺旋弹簧43的弹簧弹力,因此一旦齿环的惯性被克服,螺旋弹簧57从图4A所示的松弛状态移动到图4B所示的压缩状态。
图4A和4B描述了在压缩时起作用的弹簧,但是阻尼器也可能包括在拉伸时起作用的弹簧,举例来说,在阻尼机构51的外壳内的杆53上固定的弹簧,它的一端连接到外壳,同时另一端连接到所述杆53的末端。
除了以弹簧为基础的机构外,也可以使用其他阻尼机构。图5A和5B描述了替代的阻尼机构,在该阻尼机构中,使用弹性材料形成的带或膜59代替弹簧。
优选地,使用阻尼器(液压阻尼器)作为阻尼机构。
阻尼器利用粘性摩擦来阻止运动。阻尼器由活塞构成,所述活塞例如在减震器内与弹簧结合移动穿过粘性流体。阻尼力与运动速度成正比。在运动期间这种阻尼力沿相反的方向发生作用。这种相反指向的阻尼力阻挠运动并且吸收能量。
主要地描述阻尼器的特性的两个参数是行程和阻尼系数。阻尼器的线性位移由行程测量,然而每单位速度的力由阻尼系数测量。
如果是使用线性阻尼器,阻尼系数的优选的范围是2–200Ns/m,更优选的是6–60Ns/m(例如:20Ns/m)。
如果是使用旋转阻尼器,阻尼系数的优选的范围是0.07–7Nms/rad(每角速度转矩),更优选的是0.2–2Nms/rad(例如:0.7Nms/rad)–这是齿轮会被阻尼的实际阻尼系数。
图2和3描述了单个阻尼机构,但是需要理解的是,也可以使用多个阻尼机构以便更均匀地将制动力分配到卡盘的边缘上和允许使用更小的单独的机构以及更轻的弹簧。例如,具有六个顶针组件的旋转卡盘可以配备一个、三个或六个阻尼机构。
尽管已经通过旋转卡盘描述了本发明,但是本发明也可以使用于非旋转卡盘。此外,尽管已经结合卡盘将本发明描述为用于湿化学处理,但是它也可以用于干处理。
虽然已经通过本发明的各种优选的实施方式描述了本发明,但是要理解的是,这些实施方式仅仅是提供用来说明本发明,并不能作为限制附加的权利要求的真正范围和精神所赋予的保护范围的理由。
Claims (12)
1.一种用于夹持晶片状物体的装置,所述装置包括适合接触晶片状物体的外围边缘的夹紧元件,所述夹紧元件向闭合位置偏置,和至少一个阻尼机构,当所述夹紧元件移动到所述闭合位置时,所述阻尼机构控制所述夹紧元件用来作用于所述晶片边缘的力;其中所述阻尼机构包括附着在所述装置的主体的外壳,以及从所述外壳伸出并且被从所述外壳向外推动的杆,所述杆被定位以便接触用于所述夹紧元件的致动机构,使得在所述主体和所述致动机构之间的沿第一个方向的相对运动向所述杆施加朝向所述外壳内的力以克服偏置施加机构的作用力。
2.根据权利要求1所述的装置,其中所述夹紧元件是一系列的顶针,所述顶针共同地从其没有接触晶片状物体的外部打开位置移动到所述闭合位置。
3.根据权利要求1所述的装置,其中所述装置是用于单晶片湿法处理的处理模块内的旋转卡盘。
4.根据权利要求2所述的装置,其中所述顶针排布成圆形系列,并且每个顶针从各自的旋转基底沿着平行并偏离所述旋转基底的旋转轴的轴向上伸出。
5.根据权利要求4所述的装置,还包括与形成在每个旋转基底上的轮齿啮合的公用齿环。
6.根据权利要求5所述的装置,其中所述阻尼机构连接到所述公用齿环和所述装置的主体以便阻尼它们之间的相对运动。
7.根据权利要求1所述的装置,其中所述偏置施压机构是螺旋弹簧。
8.根据权利要求1所述的装置,其中所述偏置施压机构是弹性带或膜。
9.根据权利要求1所述的装置,其中所述阻尼机构被配置成使得所述夹紧元件具有不大于1cm/s(0.01m/s)的闭合速度。
10.根据权利要求1所述的装置,其中所述阻尼机构包括线性阻尼器,所述线性阻尼器具有的阻尼系数(力/速度)在2–200Ns/m的范围内。
11.根据权利要求1所述的装置,其中所述阻尼机构包括旋转阻尼器,所述旋转阻尼器具有的阻尼系数(转矩/角速度)在0.07–7Nms/rad的范围内。
12.根据权利要求5所述的装置,其中所述阻尼机构被配置成使得作用于所述公用齿环的整体阻尼系数在0.07–7Nms/rad(转矩/角速度)的范围内。
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US12/775,992 US9130002B2 (en) | 2010-05-07 | 2010-05-07 | Device for holding wafer shaped articles |
PCT/IB2011/051800 WO2011138706A2 (en) | 2010-05-07 | 2011-04-26 | Device for holding wafer shaped articles |
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PL2926941T3 (pl) * | 2014-04-03 | 2017-08-31 | Bystronic Laser Ag | Urządzenie do obróbki strumieniowej |
CN105789089B (zh) * | 2014-12-23 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | 真空处理装置、用于改善真空处理装置工艺结果的方法 |
US10276426B2 (en) | 2016-05-31 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for performing spin dry etching |
TWI765936B (zh) * | 2016-11-29 | 2022-06-01 | 美商東京威力科創Fsi股份有限公司 | 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭 |
KR101964208B1 (ko) * | 2016-12-23 | 2019-04-02 | 무진전자 주식회사 | 웨이퍼 고정 장치의 상태를 검출하는 방법 |
CN108987330B (zh) * | 2018-07-20 | 2024-03-12 | 长江存储科技有限责任公司 | 一种单片式清洗机及其卡盘 |
CN111244021B (zh) * | 2020-01-16 | 2022-12-09 | 北京北方华创微电子装备有限公司 | 卡盘基座及半导体加工设备 |
CN115346905B (zh) * | 2022-10-18 | 2023-03-24 | 智程半导体设备科技(昆山)有限公司 | 一种薄型半导体基材旋转定位装置 |
CN116276270B (zh) * | 2023-01-09 | 2023-09-01 | 哈尔滨理工大学 | 一种消除盘销摩擦磨损过程中共振离心偏移现象的复合装置 |
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US9130002B2 (en) | 2015-09-08 |
US20110272874A1 (en) | 2011-11-10 |
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KR20130095180A (ko) | 2013-08-27 |
WO2011138706A2 (en) | 2011-11-10 |
SG184863A1 (en) | 2012-11-29 |
WO2011138706A3 (en) | 2012-04-12 |
JP6021803B2 (ja) | 2016-11-09 |
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KR20180078339A (ko) | 2018-07-09 |
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