CN102882384A - Surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for power of motor controller of new energy automobile - Google Patents

Surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for power of motor controller of new energy automobile Download PDF

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Publication number
CN102882384A
CN102882384A CN2012103448453A CN201210344845A CN102882384A CN 102882384 A CN102882384 A CN 102882384A CN 2012103448453 A CN2012103448453 A CN 2012103448453A CN 201210344845 A CN201210344845 A CN 201210344845A CN 102882384 A CN102882384 A CN 102882384A
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China
Prior art keywords
mosfet
igbt
inversion module
energy automobile
module technology
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CN2012103448453A
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CN102882384B (en
Inventor
欧阳凤鸣
杨振军
姚峰
王俊
胡菲菲
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WUHU HONGYU AUTO ELECTRONICS CO Ltd
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WUHU HONGYU AUTO ELECTRONICS CO Ltd
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Priority to CN201210344845.3A priority Critical patent/CN102882384B/en
Publication of CN102882384A publication Critical patent/CN102882384A/en
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Abstract

The invention relates to a surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for the power of a motor controller of a new energy automobile. An inversion module consists of insulated gate bipolar transistors (IGBT) or single MOSFETs in surface-mounted packages on an aluminum substrate. Copper-clad wires printed on the aluminum substrate are used for all connection, and other accessory wires are not required. A drive balance circuit is arranged on each IGBT or each single MOSFET, and is arranged on an independent printed circuit board (PCB). The PCB with the drive balance circuit is sleeved on the IGBTs or the single MOSFETs. The drive balance circuit is independently arranged on the independent PCB, and the PCB is sleeved on the IGBTs or the single MOSFETs, so that the drive of each IGBT or each single MOSFET is close to the IGBT or the single MOSFET to realize high consistency; and moreover, the IGBTs or the single MOSFETs are in close fit, so that a space is reduced, and cost is lowered.

Description

New-energy automobile electric machine controller power paster MOSFET inversion module technology
Technical field
The invention belongs to a kind of novel power model integrated approach, relate in particular to a kind of new-energy automobile electric machine controller power paster MOSFET inversion module technology.
Background technology
Existing power model is mainly monopolized by more external company in the market, and it mainly is that integrated as unit take chip, cost is higher at a ceramic surface.
And more domestic other associated companies, only IGBT (or MOSFET) module being tiled simply puts together, and takes up room larger, the actual use is limited, and their driven equilibrium circuit also has been made on the aluminium base, and the consistency that like this paralleling MOS FET is driven is difficult to guarantee.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of conforming new-energy automobile electric machine controller power paster MOSFET inversion module technology that reduces difficulty of processing, guarantees paralleling MOS FET driving.
The present invention is achieved by the following technical solutions: a kind of new-energy automobile electric machine controller power paster MOSFET inversion module technology, be based on the aluminium base, IGBT or MOSFET single tube by the paster encapsulation form, all connect all deposited copper conductors by printing on the described aluminium base of cabling, there are not other attached cablings, at described IGBT or MOSFET single tube the driven equilibrium circuit is set, described driven equilibrium circuit is arranged on independently on the pcb board, and described pcb board with the driven equilibrium circuit is enclosed within on described IGBT or the MOSFET single tube.
Further, close-packed arrays between described each IGBT or each the MOSFET single tube, and be welded on the pad on the aluminium base.
Further, described pcb board is provided with square hole, and described square hole quantity, position and size and described IGBT or MOSFET single tube are complementary.
Further, the bus input pad of described aluminium base and three-phase o pads are provided with and connect the copper post.
The invention has the advantages that: adopt the driven equilibrium circuit is made in separately on the independent pcb board, and be enclosed within on described IGBT or the MOSFET single tube, the driving of each pipe is near oneself like this, consistency is very good, and closely agree with between single tube and the single tube, reduce the space, reduce cost.
Description of drawings
Fig. 1 is the power model structural representation based on new-energy automobile electric machine controller power paster MOSFET inversion module technology of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
See also Fig. 1, Fig. 1 is the power model structural representation based on new-energy automobile electric machine controller power paster MOSFET inversion module technology of the present invention.
Described new-energy automobile electric machine controller power paster MOSFET inversion module technology is based on the aluminium base 1, according to concrete product requirement, IGBT or MOSFET single tube 3 by the paster encapsulation form, all connect all deposited copper conductors by printing on the described aluminium base 1 of cabling, there are not other attached cablings, at described IGBT or MOSFET single tube 3 the driven equilibrium circuit is set, described driven equilibrium circuit is arranged on independently on the pcb board 4, and described pcb board 4 with the driven equilibrium circuit is enclosed within on described IGBT or the MOSFET single tube 3.
Close-packed arrays between described each IGBT or each the MOSFET single tube 3, and be welded on the pad on the aluminium base 1, described pcb board 4 is provided with square hole 5, described square hole 5 quantity, position and size and described IGBT or MOSFET single tube 3 are complementary, and the bus input pad of described aluminium base 1 and three-phase o pads are provided with and connect copper post 2.
In sum: adopt the driven equilibrium circuit is made in separately on the independent pcb board, and be enclosed within on described IGBT or the MOSFET single tube, the driving of each pipe is near oneself like this, consistency is very good, and closely agree with between single tube and the single tube, reduce the space, reduce cost.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.

Claims (4)

1. new-energy automobile electric machine controller power paster MOSFET inversion module technology, be based on the aluminium base, IGBT or MOSFET single tube by the paster encapsulation form, it is characterized in that, all connect all deposited copper conductors by printing on the described aluminium base of cabling, there are not other attached cablings, at described IGBT or MOSFET single tube the driven equilibrium circuit is set, described driven equilibrium circuit is arranged on independently on the pcb board, and described pcb board with the driven equilibrium circuit is enclosed within on described IGBT or the MOSFET single tube.
2. new-energy automobile electric machine controller power paster MOSFET inversion module technology according to claim 1 is characterized in that, close-packed arrays between described each IGBT or each MOSFET, and be welded on the pad on the aluminium base.
3. new-energy automobile electric machine controller power paster MOSFET inversion module technology according to claim 1 is characterized in that, described pcb board is provided with square hole, and described square hole quantity, position and size and described IGBT or MOSFET are complementary.
4. new-energy automobile electric machine controller power paster MOSFET inversion module technology according to claim 1 is characterized in that, the bus input pad of described aluminium base and three-phase o pads are provided with and connect the copper post.
CN201210344845.3A 2012-09-18 2012-09-18 Surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for power of motor controller of new energy automobile Active CN102882384B (en)

Priority Applications (1)

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CN201210344845.3A CN102882384B (en) 2012-09-18 2012-09-18 Surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for power of motor controller of new energy automobile

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CN201210344845.3A CN102882384B (en) 2012-09-18 2012-09-18 Surface-mounted metal oxide semiconductor field effect transistor (MOSFET) inversion module technology for power of motor controller of new energy automobile

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2515318A (en) * 2013-06-19 2014-12-24 Protean Electric Ltd Inverter for an electric motor or generator
CN107484394A (en) * 2017-09-12 2017-12-15 广州市天歌音响设备有限公司 A kind of power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1787721A (en) * 2005-10-25 2006-06-14 中国南车集团株洲电力机车研究所 Method for positioning power controlling device of electric driving power electronic power converter and apparatus thereof
CN101017733A (en) * 2002-10-30 2007-08-15 松下电器产业株式会社 IC socket
CN203279350U (en) * 2013-04-29 2013-11-06 大洋电机新动力科技有限公司 MOSFET power switch modular component

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101017733A (en) * 2002-10-30 2007-08-15 松下电器产业株式会社 IC socket
CN1787721A (en) * 2005-10-25 2006-06-14 中国南车集团株洲电力机车研究所 Method for positioning power controlling device of electric driving power electronic power converter and apparatus thereof
CN203279350U (en) * 2013-04-29 2013-11-06 大洋电机新动力科技有限公司 MOSFET power switch modular component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2515318A (en) * 2013-06-19 2014-12-24 Protean Electric Ltd Inverter for an electric motor or generator
GB2515318B (en) * 2013-06-19 2016-05-18 Protean Electric Ltd Inverter for an electric motor or generator
US9729092B2 (en) 2013-06-19 2017-08-08 Protean Electric Limited Inverter for an electric motor or generator
CN107484394A (en) * 2017-09-12 2017-12-15 广州市天歌音响设备有限公司 A kind of power amplifier

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