CN206595257U - A kind of two-side radiation power model - Google Patents
A kind of two-side radiation power model Download PDFInfo
- Publication number
- CN206595257U CN206595257U CN201621492610.9U CN201621492610U CN206595257U CN 206595257 U CN206595257 U CN 206595257U CN 201621492610 U CN201621492610 U CN 201621492610U CN 206595257 U CN206595257 U CN 206595257U
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- China
- Prior art keywords
- heat sink
- metallic plate
- igbt chip
- side radiation
- radiation power
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a kind of two-side radiation power model, including：First heat sink, the second heat sink, the first igbt chip, the second igbt chip, the first electrical interconnecting block and the second electrical interconnecting block, first igbt chip is welded on the second heat sink, and the first electrical interconnecting block is connected electrically between the first igbt chip and the first heat sink；Second igbt chip is connected electrically on the first heat sink, and the second electrical interconnecting block is connected electrically between the second igbt chip and the second heat sink.The two-side radiation power model provided according to the utility model, two igbt chips is connected electrically on different heat sinks, it is not necessary to set distance piece, simplify technique.
Description
Technical field
The utility model is related to technical field of heat dissipation, more particularly to a kind of power model of two-side radiation.
Background technology
Two-side radiation power model is that each high power device company has high heat dispersion in effort exploitation in recent years
Power model, as shown in figure 1, higher heat dispersion allows integrated two IGBT in a two-side radiation power model
（Insulated gate bipolar transistor, insulated gate bipolar transistor）Chip 313 and 323, general way
That the back side of the first igbt chip 313 and the second igbt chip 323 is welded on same heat sink 202, front also by
First electrical interconnecting block 314 and the second electrical interconnecting block 324 are welded on another block of heat sink 102, and such a way needs
Distance piece 6 is set between two igbt chips, technology difficulty is added, easily produces error, impact effect.
Utility model content
The purpose of this utility model aims to provide a kind of two-side radiation power model, by the way that igbt chip is welded on into difference
Heat sink on, eliminate distance piece, simplify technique.
To reach above-mentioned purpose, the utility model provides a kind of two-side radiation power model, the two-side radiation power mould
Block, including：First heat sink, the second heat sink, the first igbt chip, the second igbt chip, the first electrical interconnecting block and second
Electrical interconnecting block, first igbt chip is connected electrically on the second heat sink, and the first electrical interconnecting block is connected electrically in
Between one igbt chip and the first heat sink；Second igbt chip is connected electrically on the first heat sink, and described second is electric
Transfer block is connected electrically between the second igbt chip and the second heat sink.
According to two-side radiation power model of the present utility model, two igbt chips are welded on different heat sinks,
Distance piece need not be set, technique is simplified.
Preferably, it is provided with first heat sink on the first metallic plate, second heat sink and is provided with the second gold medal
Belong to plate and the 3rd metallic plate, the back side of first igbt chip is connected electrically on second metallic plate, the 2nd IGBT
The back side of chip is connected electrically on first metallic plate；First igbt chip front by the first electrical interconnecting block with
First metallic plate is electrically connected, and the front of second igbt chip is electrically connected by the second electrical interconnecting block with the 3rd metallic plate.
Preferably, the two-side radiation power model also includes positive pole power terminal, negative pole power terminal and AC power
Terminal, the positive pole power terminal connects the second metallic plate, and the AC power terminal connects the first metallic plate, the negative pole work(
Rate terminal connects the 3rd metallic plate.
Preferably, first heat sink and the second heat sink are the insulation board that conductive metallic material is covered on surface.
Preferably, first heat sink and the second heat sink are DBC substrates.
Preferably, the electrical interconnecting block is copper or copper molybdenum alloy.
Preferably, first metallic plate, the second metallic plate and the 3rd metallic plate are copper coin.
Brief description of the drawings
The above-mentioned and/or additional aspect of the utility model and advantage from the following description of the accompanying drawings of embodiments will
Become substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of existing two-side radiation power model；
Fig. 2 is the structural representation of the two-side radiation power model of the embodiment of the utility model one.
Reference in specification is as follows：
101st, the first heat sink；201st, the second heat sink；311st, the first igbt chip；312nd, the first electrical interconnecting block；
321st, the second igbt chip；322nd, the second electrical interconnecting block；401st, the first metallic plate；402nd, the second metallic plate；403rd, the 3rd gold medal
Belong to plate；501st, positive pole power terminal；502nd, AC power terminal；503rd, negative pole power terminal；6th, distance piece.
Embodiment
Embodiment of the present utility model is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element or element with same or like function are represented to same or similar label eventually.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, is only used for explaining the utility model, and can not be construed to of the present utility model
Limitation.
Following disclosure provides many different embodiments or example is used for realizing different structure of the present utility model.For
Simplify disclosure of the present utility model, hereinafter the part and setting of specific examples are described.Certainly, they are only and shown
Example, and purpose does not lie in limitation the utility model.In addition, the utility model can in different examples repeat reference numerals
And/or letter.This repetition is for purposes of simplicity and clarity, discussed various embodiments itself not to be indicated and/or are set
Relation between putting.
In description of the present utility model, it is necessary to explanation, unless otherwise prescribed and limit, term " installation ", " phase
Even ", " connection ", " connecing " should be interpreted broadly, for example, it may be mechanically connecting or electrical connection or two element internals
Connection, can be joined directly together, can also be indirectly connected to by intermediary, for one of ordinary skill in the art
Speech, the concrete meaning of above-mentioned term can be understood as the case may be.
With reference to following description and accompanying drawing, it will be clear that these and other aspects of embodiment of the present utility model.At these
In description and accompanying drawing, some particular implementations in embodiment of the present utility model are specifically disclosed, to represent to implement this reality
With some modes of the principle of new embodiment, but it is to be understood that the scope of embodiment of the present utility model is not limited
System.On the contrary, embodiment of the present utility model includes all changes fallen into the range of the spirit and intension of attached claims
Change, change and equivalent.
As shown in Fig. 2 the two-side radiation power model that the embodiment of the utility model one is provided includes：First heat sink 101,
Second heat sink 201, the first igbt chip 311, the second igbt chip 321, the first electrical interconnecting block 312 and the second electrical interconnecting
Block 322, first igbt chip 311 is connected electrically on the second heat sink 201, and first igbt chip 311 passes through first
The heat sink 101 of electrical interconnecting block 312 and first is electrically connected；Second igbt chip 321 is connected electrically in the first heat sink 101
On, second igbt chip 321 is electrically connected by the second electrical interconnecting block 322 and the second heat sink 201.
In the present embodiment, it is provided with the first metallic plate 401, second heat sink and sets on first heat sink 101
It is equipped with the second metallic plate 401 and the 3rd metallic plate 403.The back side of first igbt chip 311 is connected electrically in the second metallic plate
On 402, the front of first igbt chip 311 is electrically connected by the first electrical interconnecting block 312 and the first metallic plate 401；Institute
The back side for stating the second igbt chip 321 is connected electrically on the first metallic plate 401, and the front of second igbt chip 321 passes through
Second electrical interconnecting block 322 and the 3rd metallic plate 403 are electrically connected.The two-side radiation power model that the present embodiment is provided also is included just
Pole power terminal 501, negative pole power terminal 503 and AC power terminal 502, the positive pole power terminal 501 connect the second gold medal
Belong to plate 402, the AC power terminal 502 connects the first metallic plate 401, and the negative pole power terminal 503 connects the 3rd metal
Plate 403.
The first heat sink 101 and the second heat sink 201 in the present embodiment cover the insulation board of conductive metallic material for surface,
Electrical interconnecting block is copper or copper molybdenum alloy.Preferably, the first heat sink 101 and the second heat sink 201 are DBC（direct bond
Copper, Direct Bonding copper）Substrate, first metallic plate 401, the second metallic plate 402 and the 3rd metallic plate 403 are copper coin.
According to two-side radiation power model of the present utility model, two igbt chips are welded on different heat sinks,
Distance piece need not be set, technique is simplified.
Embodiment of the present utility model is the foregoing is only, the scope of the claims of the present utility model is not thereby limited, it is every
The equivalent structure or equivalent flow conversion made using the utility model description, or directly or indirectly it is used in other phases
The technical field of pass, is similarly included in scope of patent protection of the present utility model.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present utility model or example.In this manual, to the schematic table of above-mentioned term
State and be not necessarily referring to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be
Combined in an appropriate manner in any one or more embodiments or example.
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out in the case where not departing from principle of the present utility model and spirit a variety of changes, repaiies
Change, replace and modification, scope of the present utility model is by appended claims and its equivalent limits.
Claims (7)
1. a kind of two-side radiation power model, it is characterised in that including：First heat sink, the second heat sink, the first IGBT cores
Piece, the second igbt chip, the first electrical interconnecting block and the second electrical interconnecting block, first igbt chip are connected electrically in second and dissipated
On hot plate, the first electrical interconnecting block is connected electrically between the first igbt chip and the first heat sink；The 2nd IGBT cores
Piece is connected electrically on the first heat sink, the second electrical interconnecting block be connected electrically in the second igbt chip and the second heat sink it
Between.
2. two-side radiation power model according to claim 1, it is characterised in that is provided with first heat sink
The second metallic plate and the 3rd metallic plate, the back side of first igbt chip are provided with one metallic plate, second heat sink
It is connected electrically on second metallic plate, the back side of second igbt chip is connected electrically on first metallic plate；It is described
The front of first igbt chip is electrically connected by the first electrical interconnecting block with the first metallic plate, the front of second igbt chip
Electrically connected by the second electrical interconnecting block with the 3rd metallic plate.
3. two-side radiation power model according to claim 2, it is characterised in that the two-side radiation power model is also wrapped
Positive pole power terminal, negative pole power terminal and AC power terminal are included, the positive pole power terminal connects the second metallic plate, described
AC power terminal connects the first metallic plate, and the negative pole power terminal connects the 3rd metallic plate.
4. two-side radiation power model according to claim 1, it is characterised in that first heat sink and the second radiating
Plate is the insulation board that conductive metallic material is covered on surface.
5. two-side radiation power model according to claim 1, it is characterised in that first heat sink and the second radiating
Plate is DBC substrates.
6. two-side radiation power model according to claim 1, it is characterised in that the electrical interconnecting block is copper or copper-molybdenum
Alloy.
7. two-side radiation power model according to claim 2, it is characterised in that first metallic plate, the second metal
Plate and the 3rd metallic plate are copper coin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621492610.9U CN206595257U (en) | 2016-12-30 | 2016-12-30 | A kind of two-side radiation power model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621492610.9U CN206595257U (en) | 2016-12-30 | 2016-12-30 | A kind of two-side radiation power model |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206595257U true CN206595257U (en) | 2017-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621492610.9U Active CN206595257U (en) | 2016-12-30 | 2016-12-30 | A kind of two-side radiation power model |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403357A (en) * | 2020-03-31 | 2020-07-10 | 深圳市依思普林科技有限公司 | Double-sided heat dissipation power module |
| CN111524877A (en) * | 2019-02-03 | 2020-08-11 | 株洲中车时代电气股份有限公司 | Double-sided heat dissipation power module |
| EP3907756A1 (en) * | 2020-05-06 | 2021-11-10 | LG Electronics, Inc. | Power module of double-faced cooling and manufacturing method thereof |
-
2016
- 2016-12-30 CN CN201621492610.9U patent/CN206595257U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524877A (en) * | 2019-02-03 | 2020-08-11 | 株洲中车时代电气股份有限公司 | Double-sided heat dissipation power module |
| CN111524877B (en) * | 2019-02-03 | 2022-03-18 | 株洲中车时代半导体有限公司 | Double-sided heat dissipation power module |
| CN111403357A (en) * | 2020-03-31 | 2020-07-10 | 深圳市依思普林科技有限公司 | Double-sided heat dissipation power module |
| EP3907756A1 (en) * | 2020-05-06 | 2021-11-10 | LG Electronics, Inc. | Power module of double-faced cooling and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191205 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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| CP03 | Change of name, title or address |