CN102857179A - 功率放大器 - Google Patents

功率放大器 Download PDF

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Publication number
CN102857179A
CN102857179A CN2012102121266A CN201210212126A CN102857179A CN 102857179 A CN102857179 A CN 102857179A CN 2012102121266 A CN2012102121266 A CN 2012102121266A CN 201210212126 A CN201210212126 A CN 201210212126A CN 102857179 A CN102857179 A CN 102857179A
Authority
CN
China
Prior art keywords
switch
inductor
output
capacitor
amplifying element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012102121266A
Other languages
English (en)
Chinese (zh)
Inventor
佐佐木善伸
山本和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN102857179A publication Critical patent/CN102857179A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21136—An input signal of a power amplifier being on/off switched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7233—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier, switched on or off by putting into parallel or not, by choosing between amplifiers by one or more switch(es), being impedance adapted by switching an adapted passive network

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
CN2012102121266A 2011-06-27 2012-06-26 功率放大器 Pending CN102857179A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-141807 2011-06-27
JP2011141807A JP2013009249A (ja) 2011-06-27 2011-06-27 電力増幅器

Publications (1)

Publication Number Publication Date
CN102857179A true CN102857179A (zh) 2013-01-02

Family

ID=47361290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102121266A Pending CN102857179A (zh) 2011-06-27 2012-06-26 功率放大器

Country Status (5)

Country Link
US (1) US8587373B2 (enExample)
JP (1) JP2013009249A (enExample)
KR (1) KR101346708B1 (enExample)
CN (1) CN102857179A (enExample)
TW (1) TW201320584A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8369805B2 (en) 2010-06-07 2013-02-05 Skyworks Solutions, Inc. High linearity CMOS RF switch passing large signal and quiescent power amplifier current
JP5799767B2 (ja) * 2011-11-18 2015-10-28 三菱電機株式会社 電力増幅器
JP2015070368A (ja) * 2013-09-27 2015-04-13 三菱電機株式会社 半導体装置
KR20240141869A (ko) 2023-03-08 2024-09-30 한남대학교 산학협력단 사물통신용 기기의 전력증폭기

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020097096A1 (en) * 2001-01-19 2002-07-25 Per-Olof Brandt Power amplifier (PA) with increased dynamics and efficiency
CN101207371A (zh) * 2006-12-20 2008-06-25 株式会社Ntt都科摩 匹配电路、双频带功率放大装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3444653B2 (ja) 1994-06-09 2003-09-08 三菱電機株式会社 電力増幅器
JPH0936675A (ja) * 1995-07-18 1997-02-07 Mitsubishi Electric Corp 出力電力可変多段増幅装置
US6069526A (en) * 1998-08-04 2000-05-30 Qualcomm Incorporated Partial or complete amplifier bypass
JP2002290157A (ja) * 2001-03-27 2002-10-04 Mobile Communications Tokyo Inc 高周波電力増幅装置
US7161422B2 (en) 2003-01-03 2007-01-09 Junghyun Kim Multiple power mode amplifier with bias modulation option and without bypass switches
JP2007104280A (ja) 2005-10-04 2007-04-19 Nec Electronics Corp 高周波電力増幅回路
US7729672B2 (en) * 2006-03-22 2010-06-01 Qualcomm, Incorporated Dynamic bias control in power amplifier
US8102205B2 (en) * 2009-08-04 2012-01-24 Qualcomm, Incorporated Amplifier module with multiple operating modes
JP5397307B2 (ja) * 2010-04-26 2014-01-22 三菱電機株式会社 高周波電力増幅器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020097096A1 (en) * 2001-01-19 2002-07-25 Per-Olof Brandt Power amplifier (PA) with increased dynamics and efficiency
CN101207371A (zh) * 2006-12-20 2008-06-25 株式会社Ntt都科摩 匹配电路、双频带功率放大装置

Also Published As

Publication number Publication date
US8587373B2 (en) 2013-11-19
JP2013009249A (ja) 2013-01-10
KR101346708B1 (ko) 2014-01-03
TW201320584A (zh) 2013-05-16
KR20130007456A (ko) 2013-01-18
US20120326784A1 (en) 2012-12-27

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130102