CN102856303A - 一种半导体芯片 - Google Patents
一种半导体芯片 Download PDFInfo
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- CN102856303A CN102856303A CN2011101749803A CN201110174980A CN102856303A CN 102856303 A CN102856303 A CN 102856303A CN 2011101749803 A CN2011101749803 A CN 2011101749803A CN 201110174980 A CN201110174980 A CN 201110174980A CN 102856303 A CN102856303 A CN 102856303A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110174980.3A CN102856303B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体芯片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110174980.3A CN102856303B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体芯片 |
Publications (2)
Publication Number | Publication Date |
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CN102856303A true CN102856303A (zh) | 2013-01-02 |
CN102856303B CN102856303B (zh) | 2015-07-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201110174980.3A Active CN102856303B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体芯片 |
Country Status (1)
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CN (1) | CN102856303B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103227158A (zh) * | 2013-03-28 | 2013-07-31 | 江苏物联网研究发展中心 | 信号线tsv和地线tsv工艺集成的结构及方法 |
CN103531443A (zh) * | 2013-11-01 | 2014-01-22 | 上海贝岭股份有限公司 | 半导体器件及其制造方法 |
CN103681788A (zh) * | 2013-12-27 | 2014-03-26 | 上海贝岭股份有限公司 | 半导体器件及其制造方法 |
CN104459273A (zh) * | 2013-09-16 | 2015-03-25 | 英飞凌科技股份有限公司 | 电流传感器设备 |
CN105336727A (zh) * | 2015-10-13 | 2016-02-17 | 北京信息科技大学 | 一种苯环型基板通孔传输结构及基板通孔垂直传输结构 |
CN110010597A (zh) * | 2019-03-29 | 2019-07-12 | 上海中航光电子有限公司 | 芯片封装结构及其封装方法 |
CN110556351A (zh) * | 2019-09-16 | 2019-12-10 | 西安电子科技大学昆山创新研究院 | 一种基于硅通孔的分支耦合器 |
CN115064524A (zh) * | 2022-07-28 | 2022-09-16 | 北京象帝先计算技术有限公司 | 导电孔阵列电容、制备方法、芯片、制备方法和电子设备 |
WO2022228369A1 (zh) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | 一种集成电路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771010A (zh) * | 2008-12-29 | 2010-07-07 | 台湾积体电路制造股份有限公司 | 半导体芯片的背面金属处理 |
US20110108948A1 (en) * | 2009-11-09 | 2011-05-12 | International Business Machines Corporation | Integrated decoupling capacitor employing conductive through-substrate vias |
-
2011
- 2011-06-27 CN CN201110174980.3A patent/CN102856303B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101771010A (zh) * | 2008-12-29 | 2010-07-07 | 台湾积体电路制造股份有限公司 | 半导体芯片的背面金属处理 |
US20110108948A1 (en) * | 2009-11-09 | 2011-05-12 | International Business Machines Corporation | Integrated decoupling capacitor employing conductive through-substrate vias |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103227158B (zh) * | 2013-03-28 | 2015-07-08 | 华进半导体封装先导技术研发中心有限公司 | 信号线tsv和地线tsv工艺集成的结构及方法 |
CN103227158A (zh) * | 2013-03-28 | 2013-07-31 | 江苏物联网研究发展中心 | 信号线tsv和地线tsv工艺集成的结构及方法 |
CN104459273B (zh) * | 2013-09-16 | 2018-03-27 | 英飞凌科技股份有限公司 | 电流传感器设备 |
CN104459273A (zh) * | 2013-09-16 | 2015-03-25 | 英飞凌科技股份有限公司 | 电流传感器设备 |
US9553208B2 (en) | 2013-09-16 | 2017-01-24 | Infineon Technologies Ag | Current sensor device |
CN103531443B (zh) * | 2013-11-01 | 2016-05-11 | 上海贝岭股份有限公司 | 半导体器件及其制造方法 |
CN103531443A (zh) * | 2013-11-01 | 2014-01-22 | 上海贝岭股份有限公司 | 半导体器件及其制造方法 |
CN103681788A (zh) * | 2013-12-27 | 2014-03-26 | 上海贝岭股份有限公司 | 半导体器件及其制造方法 |
CN105336727A (zh) * | 2015-10-13 | 2016-02-17 | 北京信息科技大学 | 一种苯环型基板通孔传输结构及基板通孔垂直传输结构 |
CN105336727B (zh) * | 2015-10-13 | 2017-10-17 | 北京信息科技大学 | 一种苯环型基板通孔传输结构及基板通孔垂直传输结构 |
CN110010597A (zh) * | 2019-03-29 | 2019-07-12 | 上海中航光电子有限公司 | 芯片封装结构及其封装方法 |
CN110556351A (zh) * | 2019-09-16 | 2019-12-10 | 西安电子科技大学昆山创新研究院 | 一种基于硅通孔的分支耦合器 |
WO2022228369A1 (zh) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | 一种集成电路 |
CN115064524A (zh) * | 2022-07-28 | 2022-09-16 | 北京象帝先计算技术有限公司 | 导电孔阵列电容、制备方法、芯片、制备方法和电子设备 |
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Publication number | Publication date |
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CN102856303B (zh) | 2015-07-22 |
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Effective date of registration: 20210209 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 2 / F, no.188-6, Zirui Avenue, Chengdu hi tech Development Zone, Sichuan 610041 Patentee before: CHENGDU RUIHUA OPTICS Co.,Ltd. |
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