CN102856146B - Gas backflow prevention device - Google Patents
Gas backflow prevention device Download PDFInfo
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- CN102856146B CN102856146B CN201210371847.1A CN201210371847A CN102856146B CN 102856146 B CN102856146 B CN 102856146B CN 201210371847 A CN201210371847 A CN 201210371847A CN 102856146 B CN102856146 B CN 102856146B
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- annular body
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- gas backstreaming
- air flue
- preventing mean
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Abstract
The invention discloses a gas backflow prevention device which is arranged in a reaction cavity of a plasma etching device, a chip base is arranged in the reaction cavity, and the gas backflow prevention device is sleeved outside the chip base. The gas backflow prevention device is characterized in that the gas backflow prevention device is an annular body, a plurality of air channels are arranged on the annular body at intervals, and an upper opening of each air channel is smaller than a lower opening. The air channels can be arranged in the annular body in vertical mode and can be inclinedly arranged in the annular body to form an included angle with the annular body. When the plasma etching device of the gas backflow prevention device is used in the bosch technology and switching of two kinds of gases is performed, the first kind of gas can be prevented from flowing back to the upper space of the reaction cavity from the air channels to be mixed with the second kind of gas, so that the switching spacing interval of the two gases is shortened, scallop-shaped lateral walls can be prevented from forming in the bosch technology, product etching quality is improved, and production efficiency is improved.
Description
Technical field
The present invention relates to a kind of plasma etch apparatus, particularly relate to a kind of gas backstreaming preventing mean of plasma etch apparatus.
Background technology
At present, in technical field of manufacturing semiconductors, silicon through hole (TSV) technology is widely applied in 3 D stereo encapsulation field.Silicon through hole technology needs to carry out deep reaction ion etching to wafer, and in prior art, deep reaction ion etching adopts Bosch technique (Bosch process) to carry out usually.Bosch technique mainly comprises the following steps: (1) etch step, usually with containing SF
6mist carry out chemical reaction ion etching; (2) polymer deposition passivation step, usually with containing C
4h
8mist form fluorocarbon polymer layer at hole medial surface, with in the etch step making next cycle during chemical reaction ion etching, SF
6gas can not the polymer of oppose side wall carry out etching or etch rate slowly; Etch step and deposition step alternate cycles are carried out, until deep hole has etched.Adopt and alternately repeat isotropic etching and polymer deposition process, thus realize anisotropic deep etching completely.
As shown in Figure 1, a kind of inductively coupled plasma etching equipment of prior art, its reaction chamber 9 is provided with and is coated on the chamber wall 31 of internal working volume surrounding and the dielectric sheet 32 at top, chamber wall 31 is provided with gas inject plate 4, be provided with wafer base 2 in reaction chamber 9, the below of wafer base 2 is provided with exhaust pump 8.Radio-frequency coil 5 is provided with above dielectric sheet 32, during plasma etch apparatus work, radio-frequency coil 5 is connected with the radio-frequency power supply 61 of plasma etch apparatus, wafer base 2 is connected with the rf bias power supply 62 of plasma etch apparatus, gas inputs reaction chamber 9 by gas inject plate 4, be ionized to plasma 7, during exhaust, gas is discharged reaction chamber 9 by exhaust pump 8.
Use the plasma etching equipment of above-mentioned prior art to implement Bosch technique and there is following problem: (1), when etching dark silicon through hole, the alternate cycles etch step of carrying out and deposition passivation step also form the side wall that scallop shape rises and falls while making through hole deepen repeatedly.Use the inductively coupled plasma etching equipment of prior art shown in accompanying drawing 1 to implement Bosch technique in wafers of semiconductor material 101, etch dark silicon through hole 102, its real microstructure is shown in accompanying drawing 2 by scanning electron microscopy, its hole wall 103 and near zone N thereof are amplified as shown in Figure 3, can see that hole wall 103 forms the scallop shape side wall A of height fluctuating clearly.(2) because scallop shape side wall cannot be avoided in Bosch technique but do not wish to exist, therefore need to eliminate or reduce scallop shape side wall A.A kind of method reducing scallop shape side wall A reduces etching gas and deposition gases to switch interval time of substituting and reaction time of not changing etch step and deposition step.Usually, the interval time that etching gas and deposition gases switch is 1 ~ 2 second, in order to reduce scallop shape side wall A, needs interval time to reduce to 0.1 ~ 0.5 second.When using the plasma etch apparatus of prior art to implement Bosch technique, the interval time switched due to etching gas and deposition gases reduces, the risk of two kinds of gas mixing mutually in reaction chamber in the process switched increases, front a kind of gas is not discharged in time, backflow and the gas and vapor permeation of rear a kind of input, can cause etch rate to reduce.
Summary of the invention
The invention provides a kind of gas backstreaming preventing mean, when implementing Bosch technique and etching dark silicon through hole, front a kind of gas backstreaming and rear a kind of gas and vapor permeation can be prevented when etching gas and deposition gases switch mutually, thus the switching time of two kinds of gases can be shortened, reduce the scallop shape side wall formed in Bosch technique, in addition, can also during a kind of gas work wherein, its plasma is limited in reaction chamber, by plasma and vacuum separation, improve etching quality and production efficiency.
The present invention realizes by the following technical solutions:
A kind of gas backstreaming preventing mean, be nested with outside the wafer base in the reaction chamber of plasma etch apparatus, be characterized in, described gas backstreaming preventing mean is set to annular body, in described annular body, interval arranges multiple air flue, and in the plasma etching equipment course of work, the upper surface air pressure of annular body is greater than the lower surface air pressure of annular body.Above-mentioned gas backstreaming preventing mean, is characterized in, described air flue is through hole, and the upper shed area of through hole is less than under shed area.
Above-mentioned gas backstreaming preventing mean, is characterized in, described air flue is the groove of up/down perforation, and the upper shed area of groove is less than under shed area.
Above-mentioned gas backstreaming preventing mean, is characterized in, described air flue is the geometry of up/down perforation, and the upper shed area of air flue is less than under shed area.
Above-mentioned gas backstreaming preventing mean, is characterized in, the height of described annular body to be greater than on through hole 2 times of aperture mean value under aperture and through hole.
Above-mentioned gas backstreaming preventing mean, is characterized in, the height of described annular body is greater than the upper width of rebate of groove and 2 times of lower width of rebate mean value.
Above-mentioned gas backstreaming preventing mean, is characterized in, the height of described annular body is greater than 2 times of the mean value of geometrically opening size and under shed size.
Above-mentioned gas backstreaming preventing mean, is characterized in, described air flue is vertically set in annular body.
Above-mentioned gas backstreaming preventing mean, is characterized in, described air flue is tilting in annular body, forms angle with annular body.
Above-mentioned gas backstreaming preventing mean, is characterized in, described annular body is made up of metal material.
Compared with prior art, the present invention has following beneficial effect:
(1) the present invention is nested with around the wafer base in plasma etch apparatus reaction chamber, reaction chamber is divided into upper and lower two spaces, in the process that two kinds of gases switch, lower a kind of gas is injected to reaction chamber upper space, a kind of gas before in reaction chamber is extracted out by the exhaust pump simultaneously below wafer base, because interval in the present invention arranges multiple air flue, and the upper shed of air flue is less than under shed, gas pressure intensity suffered by gas backstreaming preventing mean upper surface is made to be greater than gas pressure intensity suffered by lower surface, front a kind of gas is prevented to be back to reaction chamber upper space and rear a kind of gas and vapor permeation by air flue, thus shortened the switching interval time of two kinds of gases, reduce the scallop shape side wall formed in Bosch technique, improve etching quality and production efficiency.
(2) the present invention is owing to having certain height, it is highly greater than 2 times of aperture and lower aperture mean value, and spaced multiple air flue upper shed is less than under shed, the upper shed that opening is less has metering function, in the process etched or deposit, the plasma of work is limited in reaction chamber internal upper part space, with the vacuum separation of lower space in reaction chamber.
Accompanying drawing explanation
Fig. 1 is the reaction chamber structural representation of prior art inductively coupled plasma etching equipment;
Fig. 2 is the dark silicon through hole microstructure schematic diagram using prior art plasma etch apparatus etching;
Fig. 3 is the scallop shape side wall microstructure schematic diagram of the dark silicon through hole n-quadrant that Fig. 2 uses prior art plasma etch apparatus to etch;
Fig. 4 is the structural representation that gas backstreaming preventing mean of the present invention is arranged in the reaction chamber of inductively coupled plasma etching equipment;
Fig. 5 is the vertical view of one of gas backstreaming preventing mean embodiment of the present invention;
Fig. 6 is the vertical view of gas backstreaming preventing mean embodiment two of the present invention;
Fig. 7 is the longitudinal sectional view of gas backstreaming preventing mean of the present invention;
Fig. 8 is the dark silicon through hole scallop shape side wall microstructure schematic diagram of the plasma etching equipment etching using apparatus of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further elaborated.
Shown in accompanying drawings 4, a kind of gas backstreaming preventing mean 1, be arranged in the reaction chamber 9 of plasma etch apparatus, the reaction chamber 9 of plasma etch apparatus is provided with and is coated on the chamber wall 31 of internal working volume surrounding and the dielectric sheet 32 at top, chamber wall 31 is provided with gas inject plate 4, be provided with wafer base 2 in the chamber wall 31 of reaction chamber 9, the below of wafer base 2 is provided with exhaust pump 8.Radio-frequency coil 5 is provided with above dielectric sheet 32, during plasma etch apparatus work, radio-frequency coil 5 is connected with the radio-frequency power supply 61 of plasma etch apparatus, wafer base 2 is connected with the rf bias power supply 62 of plasma etch apparatus, gas inputs reaction chamber 9 by gas inject plate 4, be ionized to plasma 7, during exhaust, gas is discharged reaction chamber 9 by exhaust pump 8.Gas backstreaming preventing mean 1 of the present invention is nested with outside wafer base 2, reaction chamber is separated into upper and lower two spaces.Coordinate see shown in accompanying drawing 5 and accompanying drawing 6, gas backstreaming preventing mean 1 is set to annular body 11, and in annular body 11, interval arranges multiple air flue 12.P1, P2 of indicating in accompanying drawing 4 are respectively annular body 11 upper surface, gas pressure intensity suffered by lower surface.
The present invention has three kinds of embodiments.
Shown in accompanying drawings 5, wherein the air flue 12 of the first embodiment is through hole 121, and shown in accompanying drawings 7, the upper shed area of through hole 121 is less than under shed area.Upper shed aperture routine is set to 2-5mm, and under shed aperture routine is set to 4-10mm.The height of annular body 11 is greater than 2 times of aperture and lower aperture mean value on through hole 121.Through hole 121 can be vertically set in annular body 11; Also can be tilting in annular body 11, make the center line of through hole 121 and the upper surface of annular body 11 and lower surface form angle.Coordinate shown in accompanying drawings 7, in the present embodiment, adopt manhole air flue, through hole upper shed diameter is 2mm, and under shed diameter is 4mm, and the height of annular body 11 must be greater than 6mm.
Shown in accompanying drawings 6, wherein the air flue 12 of the second embodiment is the groove 122 of up/down perforation, and shown in accompanying drawings 7, the upper shed area of groove 122 is less than under shed area.Upper slot opening routine is set to 2-5mm, and lower slot opening routine is set to 4-10mm.The height of annular body 11 is greater than 2 times of width of rebate and lower width of rebate mean value on groove 122.Groove 122 can be vertically set in annular body 11, also tiltingly in annular body 11, can form angle with annular body 11, makes the center line of through hole 121 and the upper surface of annular body 11 and lower surface form angle.
Wherein the air flue 12 of the third embodiment is the random geometry of up/down perforation, and the upper shed area of geometry is less than under shed area.The upper shed size routine of geometry is set to 2-5mm, and under shed size routine is set to 4-10cm.The height of annular body 11 is greater than 2 times of the mean value of geometrically opening size and under shed size.The air flue of geometry can be vertically set in annular body 11, also tiltingly in annular body 11, can form angle with annular body 11, makes the center line of through hole 121 and the upper surface of annular body 11 and lower surface form angle.
Annular body 11 has certain height and ensure that the air flue 12 be arranged on body 11 has enough length.Because less air flue 12 upper shed has metering function to gas, the air flue 12 of sufficient length in cooperation, make in the process etched or deposit, the plasma of work is limited in reaction chamber 9 internal upper part space, is separated with lower space in reaction chamber 9.
The annular body 11 of gas backstreaming preventing mean 1 is made up of metal material.By chamber wall 31 good earth be in contact with it, the loop of rf can be formed, in the process etched or deposit, the plasma confinement of work above annular body 11, is separated with lower space in reaction chamber 9 in reaction chamber 9.
Shown in accompanying drawings 4, gas backstreaming preventing mean 1 annular body 11 upper surface air pressure P1 in the plasma etching equipment course of work is greater than annular body 11 lower surface air pressure P2.In the process of two kinds of gas switchings, annular body 11 lower surface air pressure P2 is determined by exhaust pump 8.
When using the plasma etch apparatus comprising gas backstreaming preventing mean of the present invention to perform Bosch technique, in the process that two kinds of gases switch, a kind of gas after plasma etch apparatus injects to reaction chamber 9 upper space, a kind of gas before in reaction chamber 9 is extracted out by the exhaust pump 8 simultaneously below wafer base 2, because interval in the present invention arranges multiple air flue 12, and the upper shed of air flue 12 is less than under shed, gas pressure intensity P1 suffered by gas backstreaming preventing mean 1 upper surface is made to be greater than gas pressure intensity P2 suffered by lower surface, front a kind of gas is prevented to be back to reaction chamber 9 upper space and rear a kind of gas and vapor permeation by air flue 12, thus the switching interval time of two kinds of gases can be shortened.
Gas backstreaming preventing mean of the present invention is arranged in inductively coupled plasma etching equipment and implements Bosch technique, wafers of semiconductor material 101 etches dark silicon through hole 102, the real microstructure of its hole wall 103 is shown by scanning electron microscopy, n-quadrant same position in itself and accompanying drawing 2 is amplified and is shown in accompanying drawing 8, implement with the inductively coupled plasma etching equipment of prior art shown in accompanying drawing 3 the dark silicon through hole microstructure that Bosch technique etches to contrast, can find out, the dark silicon through hole 102 using the inductively coupled plasma etching equipment of gas backstreaming preventing mean of the present invention to etch has milder scallop shape side wall B, gas backstreaming preventing mean of the present invention substantially reduces the scallop shape side wall A of the dark silicon through hole 102 in accompanying drawing 3, improve etching quality.
In sum, the air flue 12 of under shed is less than owing to annular body 11 being arranged at intervals with multiple upper shed, and annular body 11 has certain height, effectively prevent the rear a kind of gas and vapor permeation being vented front a kind of gas backstreaming and injection when two kinds of gases switch outside reaction chamber 9, thus shortened the switching interval time of two kinds of gases, reduce the scallop shape side wall formed in Bosch technique, improve etching quality, enhance productivity.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (8)
1. a gas backstreaming preventing mean (1), be nested with wafer base (2) in the reaction chamber (9) of plasma etch apparatus outward, it is characterized in that, described gas backstreaming preventing mean (1) is set to annular body (11), the upper interval of described annular body (11) arranges multiple air flue (12), the geometry that described air flue (12) is up/down perforation, the upper shed area of air flue is less than under shed area, and in the plasma etching equipment course of work, the upper surface air pressure of annular body (11) is greater than the lower surface air pressure of annular body (11); The height of described annular body (11) is greater than 2 times of the mean value of geometrically opening size and under shed size, and in limited reactions chamber, plasma is at the upper space of annular body (11).
2. gas backstreaming preventing mean (1) as claimed in claim 1, it is characterized in that, described air flue (12) is through hole (121), and the upper shed area of through hole (121) is less than under shed area.
3. gas backstreaming preventing mean (1) as claimed in claim 1, it is characterized in that, the groove (122) that described air flue (12) is up/down perforation, the upper shed area of groove (122) is less than under shed area.
4. gas backstreaming preventing mean (1) as claimed in claim 2, is characterized in that, the height of described annular body (11) is greater than 2 times of aperture mean value under the upper aperture of through hole (121) and through hole.
5. gas backstreaming preventing mean (1) as claimed in claim 3, is characterized in that, the height of described annular body (11) is greater than 2 times of the upper width of rebate of groove (122) and lower width of rebate mean value.
6. gas backstreaming preventing mean (1) as claimed in claim 1, it is characterized in that, described air flue (12) is vertically set in annular body (11).
7. gas backstreaming preventing mean (1) as claimed in claim 1, it is characterized in that, described air flue (12) is tilting in annular body (11), forms angle with annular body (11).
8. gas backstreaming preventing mean (1) as claimed in claim 1, it is characterized in that, described annular body (11) is made up of metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371847.1A CN102856146B (en) | 2012-09-29 | 2012-09-29 | Gas backflow prevention device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210371847.1A CN102856146B (en) | 2012-09-29 | 2012-09-29 | Gas backflow prevention device |
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| Publication Number | Publication Date |
|---|---|
| CN102856146A CN102856146A (en) | 2013-01-02 |
| CN102856146B true CN102856146B (en) | 2015-05-13 |
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| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2775992Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electric inductive coupling plasma device |
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| JPS59191251A (en) * | 1983-04-14 | 1984-10-30 | Hitachi Ltd | Ambient specimen carrying chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2775992Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electric inductive coupling plasma device |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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Effective date of registration: 20210219 Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Patentee after: Nanchang Medium and Micro Semiconductor Equipment Co.,Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: China micro semiconductor equipment (Shanghai) Co.,Ltd. |
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