CN2775992Y - Electric inductive coupling plasma device - Google Patents
Electric inductive coupling plasma device Download PDFInfo
- Publication number
- CN2775992Y CN2775992Y CN 200520001650 CN200520001650U CN2775992Y CN 2775992 Y CN2775992 Y CN 2775992Y CN 200520001650 CN200520001650 CN 200520001650 CN 200520001650 U CN200520001650 U CN 200520001650U CN 2775992 Y CN2775992 Y CN 2775992Y
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- cavity
- lining plate
- bottom lining
- wafer
- vent hole
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Abstract
An inner liner of an electric inductive coupling plasma device of the utility model is arranged in an inner cavity of a cavity body. A hollow cavity can be arranged between the inner liner and the cavity body. Moreover, the inner liner is provided with gas holes which is communicated with a gas outlet of the cavity body by the hollow cavity. The inner liner is composed of a side liner plate and a bottom liner plate, wherein the lower part of the side liner plate is connected with the bottom liner plate and the bottom liner plate is provided with a plurality of gas holes. The cavity body is also provided with the gas outlet which is connected with the hollow cavity. A molecular pump can extract gases from the gas outlet, and process gases in a reaction cavity can flow in the hollow cavity by the gas holes on the bottom liner plate. Because the gas holes are distributed at the periphery of a wafer, gases can enter the reaction cavity from a central gas inlet arranged above the wafer and can flow out from the gas holes arranged at the periphery of the wafer. The process gases can be distributed at the surface of the wafer in a central-symmetrical way. Thus, the process gases in the reaction cavity can be more evenly distributed; the velocity difference of the chemical reaction happening on the surface of the wafer is smaller. The etching rate is uniform, and consequently, the wafer etching uniformity can be enhanced.
Description
Technical field
The utility model relates to a kind of semiconductor wafer process equipment, relates in particular to a kind of inductance coupled plasma device.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.The processing of semiconductor wafer commonly used is the gas etching method.Concrete etching principle is under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, plasma is made up of charged electronics and ion, gas in the reaction cavity is under the bump of electronics, except being transformed into ion, can also absorbing energy and form a large amount of active groups.The active reactive group and the material surface that is etched form chemical reaction and form volatile reaction product.Reaction product breaks away from the wafer surface that is etched, and is extracted out cavity by vacuum system, finishes the etching to wafer.
Inductance coupled plasma device shown in Figure 1 is the structure that great majority adopt in the present semiconductor etching device, and liner 5 covers reaction chamber 7 inner surfaces and prevents that the etching product from polluting reaction chamber 7.Electrostatic chuck 2 absorption wafers 9 play a part fixed wafer 9.The focusing ring 3 of annular is being protected electrostatic chuck 2, prevents to be subjected to the bombardment of plasma.The design feature of this class reaction chamber 7 is sides that gas outlet 11 is positioned at reaction chamber 7.In semiconductor fabrication processes, the be activated material on plasma etching wafer 9 surfaces of producing of the process gas that enters reaction chamber 7.11 gases of extracting reaction chamber 7 out make reaction chamber 7 form low pressure to molecular pump from the gas outlet in the system.Because gas outlet 11 is positioned at a side of reaction chamber 7, molecular pump from the gas outlet 11 gas bleedings influential to gas flow direction, as shown in Figure 1, process gas enters the skewness of reaction chamber 7 back in electrostatic chuck 2 surfaces, do not have symmetry, on wafer 9 surfaces, change bigger.Owing to will cause bigger variation being arranged in the wafer 9 lip-deep etch rates and the uniformity of reaction chamber 7 inside at reaction chamber 7 gas inside skewness.And the size of present wafer 9 is increased to 300mm from 100mm.The volume of reaction chamber 7 is increase accordingly also, and this makes and want to provide uniform more distribution of gas difficulty more that therefore there is very big variation in the central authorities from wafer 9 to etch rate and uniformity on every side.Cause the reactive group of formation and the chemical reaction velocity of wafer 9 surface generations to differ greatly, finally cause etch rate inhomogeneous.
Summary of the invention
In view of above-mentioned existing in prior technology problem, the purpose of this utility model provides a kind of inductance coupled plasma device, process gas is evenly distributed in reaction chamber, the chemical reaction velocity difference that wafer surface is taken place is less, etch rate is even, improves the wafer engraving uniformity.
The purpose of this utility model is achieved through the following technical solutions:
A kind of inductance coupled plasma device is made up of cavity, electrostatic chuck, focusing ring and liner, and electrostatic chuck is located at cavity bottom, and electrostatic chuck is with focusing ring outward, and described liner is provided with in the inner chamber of cavity; Be provided with cavity between described liner and cavity, and described liner is provided with air vent hole and communicates with the gas outlet of cavity by described cavity.
Described liner is made up of side plate and bottom lining plate, and the side plate bottom links to each other with bottom lining plate, and side plate and/or bottom lining plate are provided with air vent hole.
The pitch of holes of described bottom lining plate upper vent hole diminishes to opposite side successively from the side near the gas outlet.
The sectional area of described upper vent hole becomes big from the side near the gas outlet successively to opposite side.
Air vent hole sectional area on the described bottom lining plate is identical.
The pitch of holes of described bottom lining plate upper vent hole is identical.
The sectional area of described bottom lining plate upper vent hole diminishes to opposite side successively from the side near the gas outlet.
Described side plate and bottom lining plate are structure as a whole; Perhaps, described side plate, bottom lining plate and focusing ring are structure as a whole.
Be connected by bolt between described bottom lining plate and the focusing ring.
Be provided with sealing ring between described bottom lining plate and the focusing ring.
The technical scheme that provides by above-mentioned the utility model as can be seen, the liner of inductance coupled plasma device described in the utility model is provided with in the inner chamber of cavity; Be provided with cavity between liner and cavity, and liner is provided with air vent hole and communicates with the gas outlet of cavity by cavity.Liner is made up of side plate and bottom lining plate, and the side plate bottom links to each other with bottom lining plate, and bottom lining plate is provided with a plurality of air vent holes; Also being provided with the gas outlet on cavity links to each other with cavity.Molecular pump is bled from the gas outlet, process gas in the reaction chamber is provided with air vent hole by bottom lining plate and flows into cavity, because of air vent hole be distributed in wafer around, gas enters reaction chamber by the air inlet at center, wafer top, air vent hole by circumference flows out, and process gas becomes centrosymmetric distribution on the surface of wafer.Process gas is more evenly distributed in reaction chamber, and the chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, improves the wafer engraving uniformity.
Description of drawings
Fig. 1 is the inductance coupled plasma device structural representation of prior art;
Fig. 2 is an inductance coupled plasma device structural representation one described in the utility model;
Fig. 3 is an inductance coupled plasma device structural representation two described in the utility model.
Embodiment
Inductance coupled plasma device described in the utility model, embodiment is as shown in Figure 2: a kind of inductance coupled plasma device, be made up of with liner cavity 1, electrostatic chuck 2, focusing ring 3, electrostatic chuck 2 is located at cavity 1 bottom, the electrostatic chuck 2 outer focusing rings 3 that are with; Described liner is made up of side plate 6a and bottom lining plate 6b, the side plate 6a bottom cover plate 4 anabolic reaction chambers 7 with cavity 1 that link to each other with bottom lining plate 6b; Described liner is provided with in the inner chamber of cavity 1; 1 of described liner and cavity are provided with cavity 8, and the bottom lining plate 6b of described liner is provided with air vent hole 10, and air vent hole 10 communicates with the gas outlet 11 of cavity 1 by described cavity 8.
Because gas outlet 11 is positioned at a side of cavity 8, molecular pump is outwards bled the negative pressure that forms the varying in size of each air vent hole 10 place, and big near the negative pressure of gas outlet 11 1 sides, the negative pressure of opposite side is little.Adopt following method at this problem the utility model:
Method one: in the manufacturing process, as shown in Figure 4: under the identical situation situation of the sectional area of the air vent hole on the bottom lining plate 6b 10, allow the pitch of holes of air vent hole 10 diminish successively to opposite side from a side near gas outlet 11.So, the vapour lock of air vent hole 10 becomes big from the side near gas outlet 11 successively to opposite side; And big near the negative pressure of gas outlet 11 1 sides, the negative pressure of opposite side is little.As long as it is suitable that the pitch of holes of air vent hole 10 changes, just can be implemented in the speed unanimity that wafer 9 process gas is on every side discharged.The space process gas of wafer 9 tops is evenly distributed.The chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, improves the wafer engraving uniformity.
In method two, the manufacturing process, as shown in Figure 5: under the situation of the pitch of holes unanimity of the air vent hole on the bottom lining plate 6b 10, allow the sectional area of air vent hole 10 become big successively to opposite side from a side near the gas outlet.So, the vapour lock of air vent hole 10 becomes big from the side near gas outlet 11 successively to opposite side; And big near the negative pressure of gas outlet 11 1 sides, the negative pressure of opposite side is little.As long as it is suitable that the pitch of holes of air vent hole 10 changes, just can be implemented in the speed unanimity that wafer 9 process gas is on every side discharged.The space process gas of wafer 9 tops is evenly distributed.The chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, improves the wafer engraving uniformity.
Method three, integrated approach one and method two, the pitch of holes of the air vent hole on the bottom lining plate 6b 10 become successively to opposite side from a side near gas outlet 11 big in, allow the sectional area of air vent hole 10 diminish successively to opposite side from a side near the gas outlet.The adjustment flexibility of this method is strong, and the space process gas of wafer 9 tops is evenly distributed.The chemical reaction velocity difference that wafer surface is taken place is less, and etch rate is even, improves the quality of etched wafer.
Another embodiment of the present utility model in addition is as shown in Figure 3: above-mentioned side plate 6a and bottom lining plate 6b can be structure as a whole, and focusing ring 3 is an independent part.At this moment, be connected by bolt between bottom lining plate 6b and the focusing ring 3.And be provided with sealing ring 13 between bottom lining plate 6b and the focusing ring 3.
Certainly, above-mentioned side plate 6a, bottom lining plate 6b and focusing ring 3 can be structure as a whole.
The above; it only is the preferable embodiment of the utility model; but protection range of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the variation that can expect easily or replacement all should be encompassed within the protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Claims (10)
1, a kind of inductance coupled plasma device is made up of cavity, electrostatic chuck, focusing ring and liner, and electrostatic chuck is located at cavity bottom, and electrostatic chuck is with focusing ring outward, and described liner is provided with in the inner chamber of cavity; It is characterized in that, be provided with cavity between described liner and cavity, and described liner is provided with air vent hole and communicates with the gas outlet of cavity by described cavity.
2, inductance coupled plasma device according to claim 1 is characterized in that, described liner is made up of side plate and bottom lining plate, and the side plate bottom links to each other with bottom lining plate, and side plate and/or bottom lining plate are provided with air vent hole.
3, inductance coupled plasma device according to claim 2 is characterized in that the pitch of holes of described bottom lining plate upper vent hole diminishes to opposite side successively from the side near the gas outlet.
4, inductance coupled plasma device according to claim 2 is characterized in that the sectional area of described bottom lining plate upper vent hole becomes big from the side near the gas outlet successively to opposite side.
5, inductance coupled plasma device according to claim 1 and 2 is characterized in that the air vent hole sectional area on the described bottom lining plate is identical.
6, according to claim 1 or 3 described inductance coupled plasma devices, it is characterized in that the pitch of holes of described bottom lining plate upper vent hole is identical.
7, inductance coupled plasma device according to claim 2 is characterized in that the sectional area of described bottom lining plate upper vent hole diminishes to opposite side successively from the side near the gas outlet.
8, inductance coupled plasma device according to claim 1 is characterized in that described side plate and bottom lining plate are structure as a whole; Perhaps, described side plate, bottom lining plate and focusing ring are structure as a whole.
9,, it is characterized in that being connected by bolt between described bottom lining plate and the focusing ring according to claim 1 or 7 described inductance coupled plasma devices.
10, inductance coupled plasma device according to claim 9 is characterized in that being provided with sealing ring between described bottom lining plate and the focusing ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520001650 CN2775992Y (en) | 2005-01-27 | 2005-01-27 | Electric inductive coupling plasma device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520001650 CN2775992Y (en) | 2005-01-27 | 2005-01-27 | Electric inductive coupling plasma device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2775992Y true CN2775992Y (en) | 2006-04-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520001650 Expired - Lifetime CN2775992Y (en) | 2005-01-27 | 2005-01-27 | Electric inductive coupling plasma device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2775992Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206999B (en) * | 2006-12-18 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining and reaction chamber containing the same |
| CN102789962A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas leveling device for improving etching process |
| CN102856146A (en) * | 2012-09-29 | 2013-01-02 | 中微半导体设备(上海)有限公司 | Gas backflow prevention device |
| CN103151235A (en) * | 2013-02-20 | 2013-06-12 | 上海华力微电子有限公司 | Device for improving etching uniformity |
| CN103668121A (en) * | 2013-12-18 | 2014-03-26 | 王宏兴 | Microwave plasma chemical vapor deposition device |
| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| CN111968903A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and processing method of focusing ring |
-
2005
- 2005-01-27 CN CN 200520001650 patent/CN2775992Y/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101206999B (en) * | 2006-12-18 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inner lining and reaction chamber containing the same |
| CN102789962A (en) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | Gas leveling device for improving etching process |
| CN102856146A (en) * | 2012-09-29 | 2013-01-02 | 中微半导体设备(上海)有限公司 | Gas backflow prevention device |
| CN102856146B (en) * | 2012-09-29 | 2015-05-13 | 中微半导体设备(上海)有限公司 | Gas backflow prevention device |
| CN103151235A (en) * | 2013-02-20 | 2013-06-12 | 上海华力微电子有限公司 | Device for improving etching uniformity |
| CN103151235B (en) * | 2013-02-20 | 2016-01-27 | 上海华力微电子有限公司 | A kind of device improving etching homogeneity |
| CN103668121A (en) * | 2013-12-18 | 2014-03-26 | 王宏兴 | Microwave plasma chemical vapor deposition device |
| CN103668121B (en) * | 2013-12-18 | 2015-11-25 | 王宏兴 | A kind of microwave plasma CVD device |
| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
| CN107578977A (en) * | 2017-09-27 | 2018-01-12 | 北京北方华创微电子装备有限公司 | Reaction chamber and capacitance coupling plasma equipment |
| CN111968903A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and processing method of focusing ring |
| CN111968903B (en) * | 2020-08-24 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and method for processing focusing ring |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CX01 | Expiry of patent term |
Expiration termination date: 20150127 Granted publication date: 20060426 |