CN1850349A - Air-intake nozzle - Google Patents
Air-intake nozzle Download PDFInfo
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- CN1850349A CN1850349A CN 200510126347 CN200510126347A CN1850349A CN 1850349 A CN1850349 A CN 1850349A CN 200510126347 CN200510126347 CN 200510126347 CN 200510126347 A CN200510126347 A CN 200510126347A CN 1850349 A CN1850349 A CN 1850349A
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- frustum
- nozzle
- gas
- circumferential apertures
- air supply
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Abstract
The present invention relates to a gas nozzle. It is characterized by that it includes a nozzle self-body with central gas-feeding hole, the lower end portion of the described nozzle self-body possesses a central hole and several peripheral holes which are uniformly distributed according to radial form. Said central hole and several peripheral holes are communicated with the above-mentioned central gas-feeding hole. Said invention also provides the concrete working principle of said gas nozzle, and said gas nozzle can greatly raise uniformity of gas in reaction cavity chamber.
Description
Technical field
The present invention relates to a kind of gas nozzle, particularly a kind ofly advance the body nozzle in the semiconductor wafer manufacturing technique that is used for plasma.
Background technology
Semiconductor machining comprises the deposition processes of the chemical vapor deposition (CVD) of metal, dielectric and semi-conducting material, the etching of these layers, polishing of photoresist mask layer or the like.In the situation of etching, plasma etching is generally used for etching metal, dielectric and semi-conducting material.The typical structure of the plasma reactor of parallel plate type comprises the air chamber that contains one or more baffle plate, allows etching gas by its top electrode, silicon wafer is supported on the support of bottom electrode radio-frequency power supply and be used for providing to air chamber the gas jet source of gas.Gas is formed plasma by electrode ionization.Plasma etching is supported on the wafer below the top electrode.
During the plasma etching process, make gas ionization to form plasma by add lot of energy to the gas that is in lower pressure.By regulating the current potential of wafer, charged particle can be directed to so that vertically collide on the wafer in the plasma, makes that the material of no masked areas is removed on the wafer.
In order on the entire wafer surface, to obtain uniform etch-rate, wish on wafer surface, can distribute uniformly plasma.Conventional gas distribution design comprises that multiinjector, shower are first-class.Increase along with semiconductor-based chip size, to realize on substrate that uniform distribution of gas becomes difficult more, the quantity of opening and baffle plate must roll up to keep the uniformity of etching gas, complexity and the expense of making a kind of like this gas distribution apparatus also greatly increase, what is more important, this gas distribution plate can exert an influence to the thickness of insulating window, thickness increases the coupling efficiency that can reduce with coil energy, influence the generation of plasma, thereby be necessary nozzle of air supply is optimized design.
Semiconductor machining system is used for processing semiconductor wafer, thereby makes integrated circuit.Particularly in processes such as etching, oxidation, chemical vapor deposition (CVD), use semiconductor machining usually based on plasma.Traditional plasma process system is by being controlled at air-flow or the plasma flow in the plasma process chamber, so that the environment of the best is provided for processed wafer.The uneven distribution of processing gas that flows to vacuum chamber with in the vacuum chamber can the article on plasma body even distribution have a negative impact.
Common reaction unit structure comprises that by chamber wall 3 and electrically insulating material forms 2, chamber wall 3 bottoms are provided with exhaust outlet 6 as shown in Figure 1, and the upper end is provided with peripheral inlet port 5, and forms 2 are provided with central air induction mouth 4, and insulating window 2 is provided with coil 1.Wherein chamber wall 3 and insulating window 2 formed an enclosure space 9, i.e. reative cell, and electrostatic chuck or mechanical chuck 7 are placed on enclosure space 9 central authorities, are placed with wafer 8 on the chuck 7.During work, exhaust outlet 6 is connected with vacuum plant (dried pump) etc., enclosure space 9 is manufactured vacuum environment, discharge the residual substance of reaction, process gas is by central air induction mouth 4 or peripheral inlet port 5, and perhaps the two is combined into this space, the coil 1 of insulating window 2 tops passes to RF energy, by insulating window 2 couplings, in enclosure space 9, form plasma, the wafer on the chuck 78 is carried out etching.This traditional distribution of gas of nozzle arrangements in enclosure space 9 is inhomogeneous.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is at above-mentioned the deficiencies in the prior art, provide a kind of and can improve the inhomogeneity nozzle of air supply of reaction indoor gas.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Nozzle of air supply of the present invention comprises the nozzle body with central air induction hole, and the bottom of wherein said nozzle body is provided with the centre bore that is communicated with the central air induction hole and is radial equally distributed several circumferential apertures.
Wherein said circumferential apertures is 4～18, is preferably 6.
Wherein said circumferential apertures is bellmouth or stepped hole, and a little end and central air induction hole, aperture joins.
Wherein said nozzle body bottom middle position is provided with frustum, and described centre bore is arranged on the frustum middle position, and described circumferential apertures is arranged on the frustum sidewall.
Wherein said frustum comprises frustum, following frustum two parts, wherein descends the coning angle of the coning angle of frustum greater than last frustum, and circumferential apertures is arranged on down on the frustum sidewall.
(3) beneficial effect
The advantage and the good effect of nozzle of air supply of the present invention are: among the present invention, because the bottom of nozzle body is provided with the centre bore that is communicated with the central air induction hole and is radial equally distributed several circumferential apertures, when etching gas process nozzle body bottom, by centre bore and several circumferential apertures gas is shunted, the gas that is entered in the reative cell by centre bore directly sprays to reative cell diapire middle position, and the gas that is entered in the reative cell by circumferential apertures is tending towards along the forms inner surface to diffusion all around, thereby reduced the gas flow of direct knock-on reaction chamber bottom, make the gas density of middle body in the reaction chamber be tending towards identical, increased substantially the uniformity of reaction chamber indoor gas with partly gas density all around.
Description of drawings
Fig. 1 is the structural representation of existing reaction unit;
Fig. 2 is the structural representation of nozzle of air supply of the present invention.
Among the figure: 1. coil; 2. insulating window; 3. chamber wall; 4. central air induction mouth; 5. peripheral inlet port; 6. exhaust outlet; 7. chuck; 8. wafer; 9. enclosure space 9; 10. central air induction hole; 13. nozzle body; 14. frustum.
The specific embodiment
Below in conjunction with accompanying drawing, further describe the specific embodiment of nozzle of air supply of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 2.Nozzle of air supply of the present invention comprises the nozzle body 13 that is installed on the insulating window 2.Be provided with central air induction hole 10 in the nozzle body 13.Be provided with frustum 14 at nozzle body 13 bottom middle positions, this frustum 14 comprises frustum, following frustum two parts, wherein descend the coning angle of the coning angle of frustum greater than last frustum, middle position runs through frustum in frustum 14, frustum is provided with centre bore 11 down, is being evenly distributed with 6 circumferential apertures 12 on the frustum sidewall down.Centre bore 11 and each circumferential apertures 12 communicate with central air induction hole 10.Medium pore 11 is identical with the aperture of circumferential apertures 12, also can be inequality, specifically require to decide according to reality.The effect of frustum 14 is: at first increased centre bore 11 length, increased the pressure drop when gas flows through, thereby guarantee to have more gas to lead to reative cell through circumferential apertures 12, the inclined-plane of frustum 14 also is beneficial to the porch that gas focuses on circumferential apertures 14, reduces resistance.Described circumferential apertures 12 is bellmouth or stepped hole, and a little end and central air induction hole 10, aperture joins.In the process of flowing, the hole sectional area increases gas, has reduced the ejection resistance of gas, and has reduced flow velocity, is beneficial to the finally even distribution in reaction chamber of gas in the hole like this.Circumferential apertures 12 can be 4～18, specifically decides according to the size of reative cell.
Among the present invention, frustum 14 can perhaps not be provided with frustum without separating into last frustum, following frustum two parts yet, is radial equally distributed several circumferential apertures as long as have, and can improve the uniformity of reaction indoor gas.
More than be preferred forms of the present invention, according to content disclosed by the invention, some identical, replacement schemes that those of ordinary skill in the art can expect apparently all should fall into the scope of protection of the invention.
Claims (6)
1. nozzle of air supply, comprise nozzle body (13), it is characterized in that the bottom of described nozzle body (13) is provided with the centre bore (11) that is communicated with central air induction hole (10) and is radial equally distributed several circumferential apertures (12) with central air induction hole (10).
2. nozzle of air supply according to claim 1 is characterized in that described circumferential apertures (12) is 4～18.
3. nozzle of air supply according to claim 1 is characterized in that described circumferential apertures (12) is 6.
4. nozzle of air supply according to claim 1 it is characterized in that described circumferential apertures (12) is bellmouth or stepped hole, and a little end and central air induction hole (10), aperture joins.
5. nozzle of air supply according to claim 1, it is characterized in that described nozzle body (13) bottom middle position is provided with frustum (14), described centre bore (11) is arranged on frustum (14) middle position, and described circumferential apertures (12) is arranged on frustum (14) sidewall.
6. nozzle of air supply according to claim 5 is characterized in that described frustum (14) comprises frustum, following frustum two parts, wherein descends the coning angle of the coning angle of frustum greater than last frustum, and circumferential apertures (12) is arranged on down on the frustum sidewall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263471A CN100566847C (en) | 2005-12-07 | 2005-12-07 | Nozzle of air supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101263471A CN100566847C (en) | 2005-12-07 | 2005-12-07 | Nozzle of air supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1850349A true CN1850349A (en) | 2006-10-25 |
| CN100566847C CN100566847C (en) | 2009-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101263471A Active CN100566847C (en) | 2005-12-07 | 2005-12-07 | Nozzle of air supply |
Country Status (1)
| Country | Link |
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| CN (1) | CN100566847C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656192B (en) * | 2008-08-22 | 2011-06-15 | 北京京东方光电科技有限公司 | Device for dry etching |
| CN103137521A (en) * | 2011-12-02 | 2013-06-05 | 中国科学院微电子研究所 | Air inlet device |
| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN110215982A (en) * | 2019-06-03 | 2019-09-10 | 吉林市新大科机电技术有限责任公司 | A kind of fluidized bed counter jet mill mill porous bottom spray nozzle device in room |
| CN111613508A (en) * | 2019-02-25 | 2020-09-01 | 北京北方华创微电子装备有限公司 | Air inlet device and reaction chamber |
-
2005
- 2005-12-07 CN CNB2005101263471A patent/CN100566847C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656192B (en) * | 2008-08-22 | 2011-06-15 | 北京京东方光电科技有限公司 | Device for dry etching |
| CN103137521A (en) * | 2011-12-02 | 2013-06-05 | 中国科学院微电子研究所 | Air inlet device |
| CN104746078A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A reaction cavity and a plasma processing device |
| CN104746078B (en) * | 2013-12-27 | 2018-01-09 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and plasma processing device |
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN111613508A (en) * | 2019-02-25 | 2020-09-01 | 北京北方华创微电子装备有限公司 | Air inlet device and reaction chamber |
| CN110215982A (en) * | 2019-06-03 | 2019-09-10 | 吉林市新大科机电技术有限责任公司 | A kind of fluidized bed counter jet mill mill porous bottom spray nozzle device in room |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100566847C (en) | 2009-12-09 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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