CN102822900A - 对至少一个多级相变存储器单元进行编程 - Google Patents
对至少一个多级相变存储器单元进行编程 Download PDFInfo
- Publication number
- CN102822900A CN102822900A CN2011800165719A CN201180016571A CN102822900A CN 102822900 A CN102822900 A CN 102822900A CN 2011800165719 A CN2011800165719 A CN 2011800165719A CN 201180016571 A CN201180016571 A CN 201180016571A CN 102822900 A CN102822900 A CN 102822900A
- Authority
- CN
- China
- Prior art keywords
- resistance
- pulse
- programming
- pcm unit
- pcm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0097—Erasing, e.g. resetting, circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10158300 | 2010-03-30 | ||
EP10158300.3 | 2010-03-30 | ||
PCT/IB2011/051220 WO2011121491A1 (en) | 2010-03-30 | 2011-03-23 | Programming at least one multi-level phase change memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102822900A true CN102822900A (zh) | 2012-12-12 |
CN102822900B CN102822900B (zh) | 2015-09-30 |
Family
ID=44263023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180016571.9A Expired - Fee Related CN102822900B (zh) | 2010-03-30 | 2011-03-23 | 对至少一个多级相变存储器单元进行编程 |
Country Status (6)
Country | Link |
---|---|
US (3) | US9064571B2 (zh) |
JP (1) | JP5968868B2 (zh) |
CN (1) | CN102822900B (zh) |
DE (1) | DE112011100217T5 (zh) |
GB (1) | GB2492701B (zh) |
WO (1) | WO2011121491A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2492701B (en) | 2010-03-30 | 2014-03-19 | Ibm | Programming at least one multi-level phase change memory cell |
JP2013114737A (ja) | 2011-11-28 | 2013-06-10 | Internatl Business Mach Corp <Ibm> | 相変化メモリ・セルをプログラミングするための方法、コンピュータ・プログラム、および装置、ならびに相変化メモリ・デバイス(相変化メモリ・セルのプログラミング) |
US9269432B2 (en) * | 2014-01-09 | 2016-02-23 | Micron Technology, Inc. | Memory systems and memory programming methods |
KR102173441B1 (ko) | 2014-02-04 | 2020-11-03 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
US10454025B1 (en) | 2018-06-13 | 2019-10-22 | International Business Machines Corporation | Phase change memory with gradual resistance change |
US11347999B2 (en) | 2019-05-22 | 2022-05-31 | International Business Machines Corporation | Closed loop programming of phase-change memory |
CN113517015B (zh) * | 2021-04-29 | 2024-05-14 | 中国科学院上海微系统与信息技术研究所 | 一种实现存储单元多级存储的方法及装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080025080A1 (en) * | 2006-07-27 | 2008-01-31 | Cswitch Corporation | Method and apparatus for programming phase change devices |
CN101140800A (zh) * | 2006-06-09 | 2008-03-12 | 奇梦达北美有限公司 | 利用来自存取器件的电流编程的存储器单元 |
US20080151601A1 (en) * | 2006-12-20 | 2008-06-26 | Samsung Electronics Co., Ltd. | Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices |
JP2009099199A (ja) * | 2007-10-17 | 2009-05-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7966429B2 (en) * | 2007-05-28 | 2011-06-21 | Super Talent Electronics, Inc. | Peripheral devices using phase-change memory |
US7663132B2 (en) * | 2002-04-04 | 2010-02-16 | Kabushiki Kaisha Toshiba | Resistance change memory device |
DE60323202D1 (de) * | 2003-02-21 | 2008-10-09 | St Microelectronics Srl | Phasenwechselspeicheranordnung |
JP4529493B2 (ja) * | 2004-03-12 | 2010-08-25 | 株式会社日立製作所 | 半導体装置 |
US7391642B2 (en) * | 2005-01-25 | 2008-06-24 | Intel Corporation | Multilevel programming of phase change memory cells |
KR100794654B1 (ko) | 2005-07-06 | 2008-01-14 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 프로그램 방법 |
CN101180683B (zh) * | 2005-09-21 | 2010-05-26 | 株式会社瑞萨科技 | 半导体器件 |
US7209384B1 (en) * | 2005-12-08 | 2007-04-24 | Juhan Kim | Planar capacitor memory cell and its applications |
KR100764738B1 (ko) * | 2006-04-06 | 2007-10-09 | 삼성전자주식회사 | 향상된 신뢰성을 갖는 상변화 메모리 장치, 그것의 쓰기방법, 그리고 그것을 포함한 시스템 |
US7623401B2 (en) | 2006-10-06 | 2009-11-24 | Qimonda North America Corp. | Semiconductor device including multi-bit memory cells and a temperature budget sensor |
US7436695B2 (en) * | 2006-11-21 | 2008-10-14 | Infineon Technologies Ag | Resistive memory including bipolar transistor access devices |
US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
KR100882119B1 (ko) * | 2007-07-24 | 2009-02-05 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 구동 방법 |
KR101390337B1 (ko) * | 2007-09-13 | 2014-04-29 | 삼성전자주식회사 | 멀티-레벨 상변환 메모리 장치, 그것의 프로그램 방법,그리고 그것을 포함한 메모리 시스템 |
US7787291B2 (en) * | 2007-09-26 | 2010-08-31 | Intel Corporation | Programming a multilevel phase change memory cell |
JP5151439B2 (ja) | 2007-12-12 | 2013-02-27 | ソニー株式会社 | 記憶装置および情報再記録方法 |
US7885101B2 (en) * | 2008-12-29 | 2011-02-08 | Numonyx B.V. | Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory |
US8301977B2 (en) * | 2008-12-30 | 2012-10-30 | Stmicroelectronics S.R.L. | Accelerating phase change memory writes |
US8023345B2 (en) * | 2009-02-24 | 2011-09-20 | International Business Machines Corporation | Iteratively writing contents to memory locations using a statistical model |
US20100226168A1 (en) * | 2009-03-04 | 2010-09-09 | Savransky Semyon D | Programming methods for phase-change memory |
US7944740B2 (en) * | 2009-09-22 | 2011-05-17 | International Business Machines Corporation | Multi-level cell programming of PCM by varying the reset amplitude |
US8289762B2 (en) * | 2009-10-30 | 2012-10-16 | Intel Corporation | Double-pulse write for phase change memory |
WO2011080770A1 (en) * | 2009-12-29 | 2011-07-07 | Ferdinando Bedeschi | Use of decreasing verify currents in a set programming cycle of a phase change memory |
GB2492701B (en) * | 2010-03-30 | 2014-03-19 | Ibm | Programming at least one multi-level phase change memory cell |
-
2011
- 2011-03-23 GB GB1218792.8A patent/GB2492701B/en not_active Expired - Fee Related
- 2011-03-23 US US13/638,311 patent/US9064571B2/en not_active Expired - Fee Related
- 2011-03-23 CN CN201180016571.9A patent/CN102822900B/zh not_active Expired - Fee Related
- 2011-03-23 WO PCT/IB2011/051220 patent/WO2011121491A1/en active Application Filing
- 2011-03-23 JP JP2013501999A patent/JP5968868B2/ja not_active Expired - Fee Related
- 2011-03-23 DE DE112011100217T patent/DE112011100217T5/de not_active Ceased
-
2012
- 2012-10-24 US US13/659,364 patent/US9576655B2/en active Active
-
2016
- 2016-12-29 US US15/394,207 patent/US10037803B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101140800A (zh) * | 2006-06-09 | 2008-03-12 | 奇梦达北美有限公司 | 利用来自存取器件的电流编程的存储器单元 |
US20080025080A1 (en) * | 2006-07-27 | 2008-01-31 | Cswitch Corporation | Method and apparatus for programming phase change devices |
US20080151601A1 (en) * | 2006-12-20 | 2008-06-26 | Samsung Electronics Co., Ltd. | Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices |
JP2009099199A (ja) * | 2007-10-17 | 2009-05-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
GB2492701A (en) | 2013-01-09 |
DE112011100217T5 (de) | 2012-10-31 |
WO2011121491A1 (en) | 2011-10-06 |
US10037803B2 (en) | 2018-07-31 |
JP2013524394A (ja) | 2013-06-17 |
US9576655B2 (en) | 2017-02-21 |
GB2492701B (en) | 2014-03-19 |
US20130044540A1 (en) | 2013-02-21 |
JP5968868B2 (ja) | 2016-08-10 |
CN102822900B (zh) | 2015-09-30 |
US20170110190A1 (en) | 2017-04-20 |
US9064571B2 (en) | 2015-06-23 |
US20130021845A1 (en) | 2013-01-24 |
GB201218792D0 (en) | 2012-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102822900A (zh) | 对至少一个多级相变存储器单元进行编程 | |
US7800935B2 (en) | Resistance change memory device | |
CN102610272B (zh) | 一种阻变存储器单元的编程和擦除方法及装置 | |
CN101978427B (zh) | 相变存储器装置及操作相变存储器装置的方法 | |
US7817475B2 (en) | Method and apparatus for accessing a phase-change memory | |
CN109841248B (zh) | 存储装置及其操作方法 | |
US20160118117A1 (en) | Resistive memory device, resistive memory system, and method of operating resistive memory device | |
KR102251814B1 (ko) | 메모리 장치, 그것의 동작 및 제어 방법 | |
CN1628357B (zh) | 读取结构相变存储器的方法 | |
US20090040814A1 (en) | Method for driving multi-level data to a phase change memory device | |
CN103137191A (zh) | 用于对相变存储器单元编程的方法和装置 | |
US9293198B2 (en) | Programming of gated phase-change memory cells | |
US10685707B2 (en) | Memory device | |
US11942146B2 (en) | Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods | |
US20210118502A1 (en) | Memory device and operating method thereof | |
US11443803B2 (en) | Memory device and method thereof | |
US20110242884A1 (en) | Programming at Least One Multi-Level Phase Change Memory Cell | |
CN100585728C (zh) | 相变存储单元阵列写电流的字线电压补偿方法 | |
US11062770B2 (en) | Memory device | |
CN109754835B (zh) | 存储装置 | |
US9076517B2 (en) | Memory apparatus with gated phase-change memory cells | |
CN102890962A (zh) | 一种相变存储器多级存储系统及方法 | |
CN101894587A (zh) | 相变存储器的自限写入脉冲发生电路 | |
KR102407455B1 (ko) | 메모리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161110 Address after: Amsterdam, The Netherlands Patentee after: HGST Netherlands B.V. Address before: American New York Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20181121 Address after: California, USA Patentee after: Western Digital Technologies, Inc. Address before: Amsterdam, The Netherlands Patentee before: HGST Netherlands B.V. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150930 |
|
CF01 | Termination of patent right due to non-payment of annual fee |