CN102800799A - 增进散热的发光装置 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000007789 sealing Methods 0.000 claims description 75
- 239000004005 microsphere Substances 0.000 claims description 52
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 52
- 230000005855 radiation Effects 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000012790 adhesive layer Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 7
- 230000001737 promoting effect Effects 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 239000002088 nanocapsule Substances 0.000 abstract description 2
- 239000008393 encapsulating agent Substances 0.000 abstract 2
- -1 polyethylene Polymers 0.000 description 30
- 239000004698 Polyethylene Substances 0.000 description 12
- 239000004743 Polypropylene Substances 0.000 description 12
- 229920001577 copolymer Polymers 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 229920000058 polyacrylate Polymers 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 229920000573 polyethylene Polymers 0.000 description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 description 12
- 239000005020 polyethylene terephthalate Substances 0.000 description 12
- 229920001155 polypropylene Polymers 0.000 description 12
- 229920001296 polysiloxane Polymers 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 229920006397 acrylic thermoplastic Polymers 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 6
- 229920001169 thermoplastic Polymers 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 239000004634 thermosetting polymer Substances 0.000 description 6
- 239000004416 thermosoftening plastic Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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Abstract
一种增进散热的发光装置,其包含一基板、一固定于基板上的芯片、一覆盖芯片的封胶,以及多个混合在封胶内的纳米碳球,以热辐射方式促进芯片散热。
Description
技术领域
本发明关于一种发光装置,特别关于一种具高散热能力的发光装置者。
背景技术
由于发光二极管(LED)具有低耗能和高照明效率的优势,因此,发光二极管快速地被使用在许多的电子产品上,例如:行动装置、广告灯箱、萤幕、信号灯、汽车转向信号灯等等。如众所周知的,发光二极管发光时会产生大量的热,因此,需使用散热装置藉以辅助散逸大量的热能。
传统的发光二极管封装结构主要是包括一散热装置、设置于该散热装置上的一发光二极管芯片,以及一覆盖该发光二极管芯片上的封装胶体。藉以将发光二极管发出的光透过封装体向外射出。因为封装体通常使用高分子材料制作而成,由于高分子材料的导热性较差,因此大部分的热能需透过辅助的散热装置散热。
此外,为达到高照明度的要求,高功率发光二极管的使用是必然的趋势。然而,因高功率发光二极管所产生热能更高,使得一般的散热装置无法有效地散逸的更多的热,造成高功率发光二极管亮度的下降及寿命的减少。因此,需要更复杂的散热设计辅助散热,相对的,复杂的散热设计将会增加发光二极管封装的体积、重量和成本。
发明内容
本发明一实施例提供一种增进散热的发光装置,其包含一导线架、一芯片、多条金属线、一封胶,以及多个不导电的纳米碳球。其中,该芯片固定于导线架上,多条金属线电性连接芯片与导线架。且多个不导电纳米碳球混入封胶内。再藉由封胶包覆导线架、芯片和该多条金属线。
本发明另一实施例提供一种增进散热的发光装置,其包含一基板、一芯片、一封胶,以及多个不导电纳米碳球,其中多个凸块设置于芯片的焊垫,利用芯片覆晶接合于基板上。而多个不导电纳米碳球则混合于封胶内,其中封胶至少部份包覆基板和芯片。
本发明另一实施例提供一种增进散热的发光装置,其包含一基板、一芯片、一封胶、多条金属线、一透镜部,以及多个不导电纳米碳球。多条金属线电性连接芯片与基板。多个不导电纳米碳球则混合在透镜部,其中封胶至少部分包覆基板、芯片和多条金属线。
上文已相当广泛地概述本发明的技术特征及优点,俾使下文的本发明详细描述得以获得较佳了解。构成本发明的权利要求标的的其它技术特征及优点将描述于下文。本发明所属技术领域中具有通常知识者应了解,可相当容易地利用下文揭示的概念与特定实施例可作为修改或设计其它结构或工艺而实现与本发明相同的目的。本发明所属技术领域中具有通常知识者亦应了解,这类等效建构无法脱离后附的权利要求所界定的本发明的精神和范围。
附图说明
图1显示本发明一第一实施例的发光装置的截面示意图;
图2显示本发明一第二实施例的发光装置的截面示意图;
图3显示本发明一第三实施例的发光装置的截面示意图;
图4显示本发明一第四实施例的发光装置的截面示意图;
图5显示本发明一第五实施例的发光装置的截面示意图;
图6显示本发明一第六实施例的发光装置的截面示意图;
图7显示本发明一第七实施例的发光装置的截面示意图;以及
图8显示本发明一第八实施例的发光装置的截面示意图。
具体实施方式
图1显示本发明的第一实施例的增进散热发光装置10截面示意图。图2显示本发明一第二实施例的增进散热的发光装置20截面示意图。参照图1与图2所示,增进散热的发光装置10或20包含一导线架13、一芯片12、多条金属线15、一封胶14和多个不导电纳米碳球(non-electrically conductive carbon nanocapsules)16,其中芯片12固定于导线架13;多条金属线15电性连接芯片12和导线架13;封胶14与多个不导电纳米碳球16混合并包覆芯片12、导线架13和该多条金属线15。
如图1所示,该增进散热的发光装置10更包含一萤光胶11。该萤光胶11覆盖芯片12,将芯片12的部份发光转变成互补色光,而互补色光可与芯片12的另一部份发光混合,以模拟白光。
在另一实施例中,该萤光胶11中亦可混合多个不导电的纳米碳球16。
如图1和图2所示,该导线架13可包含一阴极13a和一阳极13b。如众所周知,芯片12内包含掺杂杂质(impurity)的半导体材料,藉此产生p-n接合。电流从阳极13b或p型材料侧流向阴极13a或n型材料侧。当电子与空穴结合时,能量以光子(即光)的形式释放。因此,当电子连续与空穴结合时,光便连续发射出。
再参照图1与图2,导线架13可更包含一下沉结构(down set)13c,芯片12设置于下沉结构13c中。萤光胶11可设置于下沉结构13c中并包覆芯片12。
再者,封胶14包覆阴极13a的一末端部、阳极13b的末端部、下沉结构13c和图1所示实施例的芯片12,并可进一步包覆图1所示实施例的萤光胶11。除此之外,该封胶14可进一步形成一弧面的透镜部141,该透镜部141聚焦射出光,以增强光强度和控制光射出方向。于上述实施例中,该封胶14可包含绝缘环氧树脂材料。在一实施例中,封胶14可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者。在另一实施例中,封胶14可包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethylene terephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadienecopolymer)或其他类似者。
如图1与图2所示,该发光装置10或20包含多个不导电纳米碳球16。该多个不导电纳米碳球16散布在封胶14内。多个不导电纳米碳球16可促进芯片12所产生的热能散逸。特而言之,多个不导电纳米碳球16可将芯片12所产生的热能以红外线辐射(infrared radiation)的方式散逸,并能减少热传导路径以达成散热的目的,并因此能有效的降低该电子封装的作业温度。
在一实施例中,不导电纳米碳球16的表面可进行处理,以使不导电纳米碳球16与封胶14之间可具有良好的界面粘着性。
不导电纳米碳球16可有效地将芯片12的热能散出。而低填充量的不导电纳米碳球16即足够达成散热目的。在一实施例中,封胶14内混合着重量百分比为10%或10%以下(较佳为1%)的纳米碳球16。如此低填充量不会影响光从封胶14散射出。
图3显示本发明一第三实施例的发光装置30的截面示意图。参照图3所示,发光装置30包含一基板33、一芯片32、多条金属线35,以及一封胶34。芯片32固定于基板33。多条金属线35电性连接芯片32和基板33。封胶34混合着多个不导电纳米碳球16,且包覆芯片32、基板33和多条金属线35。
如图3所示,基板33可包含阴极33a、阳极33b和一支撑部33c。阴极33a和阳极33b的每一者形成于支撑部33c上,并从支撑部33c的一表面,沿该表面绕着相应的一侧壁,且朝向及沿一相反表面延伸。在一实施例中,芯片32设置于阴极33a上。基板33可为印刷电路板,例如:FR-4、FR-5、BT基板或其他类似者、金属核心的印刷电路板(metal core printed circuit board)、陶瓷基板、弹性薄膜(flexfilm)或其它类似者。
多个不导电纳米碳球16混合的封胶34设置于基板33的上方,且包覆芯片32和该多条金属线35,以散发芯片32所产生的热。相同于先前实施例,重量百分比10%或10%以下(重量百分比较佳为1%)的不导电纳米碳球16足以达成散热的目的。且封胶34可包含绝缘环氧树脂材料。在一实施例中,封胶34可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者。在另一实施例中,封胶34可包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethylene terephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadiene copolymer)或其他类似者。
图4显示本发明一第四实施例的发光装置40的截面示意图。参照图4所示,发光装置40包含一基板33、一芯片32、多条金属线35、一封胶44和多个不导电纳米碳球16。芯片32固定于基板33。多条金属线35电性连接芯片32和基板33。封胶44包覆芯片32和基板33的上表面。多个不导电纳米碳球16混合于封胶44。
基板33与图3实施例的基板33相同,包括一阳极33b和一阴极33a,其中芯片32固定于阴极33a上。
如图4所示,该发光装置40包含一反射体47。反射体47形成于基板33上,以将芯片32的发光反射至所需要的方向。反射体47可以是在封装前在基板33周围固定的外加元件,或者是基板33的一部分而封胶44可填充于反射体47内。
再者,封胶44包含绝缘环氧树脂材料,并包覆芯片32和该多条金属线35。且该封胶44可混入重量百分比10%或10%以下(较佳为1%)的不导电纳米碳球16,以促进芯片32的散热。在一实施例中,封胶44可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者。在另一实施例中,封胶44可包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethyleneterephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadiene copolymer)或其他类似者。
在图4中,发光装置40更包含一透镜48。该透镜48设置于封胶44上,以将光导向所欲反射的方向。该透镜48内亦可包含重量百分比10%或10%以下(较佳为1%)的不导电纳米碳球16,藉此可于透镜48中形成散热路径。其中,透镜48可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者;或者包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethyleneterephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadiene copolymer)或其他类似者。
图5显示本发明一第五实施例的发光装置50的截面示意图。参照图5所示,发光装置50包含一基板53、一芯片52、多条金属线55、封胶54和多个不导电纳米碳球16。多条金属线55电性连接基板53和芯片52。封胶54与多个不导电纳米碳球16混合,并包覆芯片52。
如图5所示,基板53可为具一开口的印刷电路板。散热件51可用于发光装置50内,插置在基板53的开口中,而芯片52设置于散热件51上。散热件51可例如以金属制成。
该封胶54可包覆芯片52和该多条金属线55。多个不导电纳米碳球16混入封胶54内,如此芯片52产生的热可有效地以热辐射的方式,从封胶54散出。在一实施例中,重量百分比10%或10%以下(较佳为1重量百分比)的不导电纳米碳球16混入封胶54内。
如图5所示,绝缘材料59被用来覆盖散热件51的露出表面,作为电性绝缘。多个不导电纳米碳球16可包含于绝缘材料59内,使得芯片52的产热可有效地从绝缘材料59散逸。该绝缘材料59可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者;或者包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethylene terephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadiene copolymer)或其他类似者。在一实施例中,以绝缘材料59与多个不导电纳米碳球16的混合物的总重计,重量百分比在10%或10%以下(较佳为1%)的不导电纳米碳球16混入绝缘材料59内。
再参图5所示,发光装置50包含透镜58。透镜58设置于封胶54上,以将光导向所欲发射的方向。透镜58可包含热固性高分子,例如:硅基树脂(silicone)、环氧树脂(epoxy resin)、丙烯酸树脂(acrylics)或其他类似者;或者包含热塑性材料,例如:聚乙烯(polyethylene)、聚丙烯(polypropylene)、聚碳酸酯(polycarbonate)、聚对苯二甲酸乙二酯(polyethylene terephthalate)、聚丙烯酸酯(polyacrylate)、丙烯腈-丁二烯-苯二烯共聚物(acrylonitrile styrene butadiene copolymer)或其他类似者。
如图5所示,发光装置50包含一反射体57和一透镜58。反射体57设置于封胶54的周围来反射光,藉此增加光强度。透镜58将光导向所欲发射的方向。
图6显示本发明一第六实施例的发光装置60的截面示意图。参照图6所示,发光装置60包含一基板33、一芯片32、一封胶34和多个不导电纳米碳球16。基板33包含一阴极33a和一阳极33b。芯片32覆晶接合于阴极33a和阳极33b。封胶34覆盖芯片32。多个不导电纳米碳球16与封胶34混合。
如图6所示,发光装置60可更包含萤光粉,混合于封胶34内,以让发光装置60可模拟出白光。且封胶34混合多个不导电纳米碳球16,如此芯片32产生的热可有效地从封胶34散出。此外,该封胶34可塑造成球形或部分球形(partialsphere),以将光导向所欲的方向。
发光装置60可更包含一光学元件62和一反射层61。光学元件62形成于封胶34的周围,以提供一保护封胶34的作用。且该反射层61形成于光学元件62与封胶34之间,用以反射芯片32的发光,以增加发光强度。
图7显示本发明一第七实施例的发光装置70的截面示意图。参照图7所示,发光装置70包含多个接点71、一散热件72、一基板73、一图案化的导电胶层74、一芯片75、一封胶76,以及多个不导电纳米碳球16。散热件72设置于多个接点71之间。基板73包含一图案化金属层731。图案化的导电胶层74电性连接多个接点71和图案化金属层731。芯片75覆晶接合于图案化金属层731上,且与散热件72热耦合。封胶76设置于基板73上以包覆晶芯片75及图案化的导电胶层74。多个不导电纳米碳球16散布于封胶76内,使芯片75产生的热可有效地以热辐射方式从封胶76散出。
散热件72可以导热材料制作,例如:铜、铝或其他类似者。
导电胶层74包含焊料(solder material)、银胶(silver paste)、异向性导电胶(anisotropic conductive film)或其他类似者。
基板73更包含两绝缘层732,其中金属层731设置于两绝缘层732之间。
发光装置70可更包含萤光粉,混合于封胶76内,以让散热发光装置70可模拟出白光。
发光装置70可更包含一粘胶层77,其中粘胶层77形成于芯片75和散热件72之间。粘胶层77将芯片75和散热件72相互粘接一起,且电性绝缘芯片75和散热件72。粘胶层77可包含多个不导电纳米碳球16,如此芯片75产生的热亦可有效地从粘胶层77散出。
图8显示本发明一第八实施例的发光装置80的截面示意图。参照图8所示,发光装置80类似图7显示的发光装置70,惟发光装置80更包含一保护层82、一反射层81和封胶76。保护层82具有一开口,开口具有一截锥形状(shape of truncatedcone)。反射层81形成在界定该开口的表面上。封胶76充填于发光装置80的反射层81内,而具有一弯曲凹面。类似地,多个不导电纳米碳球16可散布于封胶76和粘胶层77内,使芯片75所产生的热能可有效地从封胶76和粘胶层77以热辐射的方式散出。
本发明的技术内容及技术特点已揭示如上,然而本发明所属技术领域中具有通常知识者应了解,在不背离后附权利要求所界定的本发明精神和范围内,本发明的教示及揭示可作种种的替换及修饰。例如,上文揭示的许多工艺可以不同的方法实施或以其它工艺予以取代,或者采用上述二种方式的组合。
此外,本案的权利范围并不局限于上文揭示的特定实施例的工艺、机台、制造、物质的成份、装置、方法或步骤。本发明所属技术领域中具有通常知识者应了解,基于本发明教示及揭示工艺、机台、制造、物质的成份、装置、方法或步骤,无论现在已存在或日后开发者,其与本案实施例揭示者以实质相同的方式执行实质相同的功能,而达到实质相同的结果,亦可使用于本发明。因此,以下的权利要求用以涵盖用以此类工艺、机台、制造、物质的成份、装置、方法或步骤。
Claims (19)
1.一种增进散热的发光装置,包含:
一导线架;
一芯片,固定于该导线架;
多条金属线,电性连接该芯片与该导线架;
多个不导电纳米碳球;以及
一封胶,与该多个不导电纳米碳球混合,其中该封胶包覆该导线架、该芯片和该多条金属线。
2.根据权利要求1所述的增进散热的发光装置,其特征在于,更包含一萤光胶,以覆盖该芯片。
3.根据权利要求2所述的增进散热的发光装置,其特征在于,该萤光胶与该多个不导电纳米碳球混合。
4.根据权利要求1所述的增进散热的发光装置,其特征在于,该导线架包含一下沉结构,该芯片设置于该下沉结构。
5.根据权利要求1所述的增进散热的发光装置,其特征在于,该封胶包含一透镜部。
6.根据权利要求1所述的增进散热的发光装置,其特征在于,混入该封胶的该多个不导电纳米碳球的重量百分比小于10%。
7.一种增进散热的发光装置,包含:
一基板;
一芯片,固定于该基板;
多个不导电纳米碳球;以及
一封胶,与该多个不导电纳米碳球混合,其中该封胶至少部份包覆该基板和该芯片。
8.根据权利要求7所述的增进散热的发光装置,其特征在于,更包含多条金属线,电性连接该芯片与该基板。
9.根据权利要求7所述的增进散热的发光装置,其特征在于,该芯片覆晶接合于该基板。
10.根据权利要求7所述的增进散热的发光装置,其特征在于,更包含一散热件,以与该芯片相接。
11.根据权利要求10所述的增进散热的发光装置,其特征在于,更包含一绝缘材料,其中该绝缘材料与该多个不导电纳米碳球混合,且覆盖该散热件。
12.根据权利要求10所述的增进散热的发光装置,其特征在于,更包含一粘胶层和多个另外不导电纳米碳球,该粘胶层粘接该芯片与该散热件,该多个另外不导电纳米碳球混入该粘胶层。
13.根据权利要求7所述的增进散热的发光装置,其特征在于,更包含一透镜部,形成于该封胶上。
14.根据权利要求7所述的增进散热的发光装置,其特征在于,混入该封胶的该多个不导电纳米碳球的重量百分比小于10%。
15.根据权利要求7所述的增进散热的发光装置,其特征在于,更包含一反射体,以围绕该封胶。
16.根据权利要求7所述的增进散热的发光装置,其特征在于,更包含一粘着层和一反射体,其中该保护层绕着该封胶而形成,该反射体位于该保护层与该封胶之间。
17.一种增进散热的发光装置,包含:
一基板;
一芯片,固定于该基板;
多条金属线,电性连接该芯片与该基板;
一封胶,与多个不导电纳米碳球混合,该封胶至少部份包覆该基板、该多条金属线和该芯片;
一透镜部,设置于该封胶;以及
多个另外不导电纳米碳球,混合于该透镜部。
18.根据权利要求17所述的增进散热的发光装置,其特征在于,混入该封胶的该多个不导电纳米碳球的重量百分比小于10%。
19.根据权利要求17所述的增进散热的发光装置,其特征在于,更包含一反射体,以围绕该封胶。
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CN103151448A (zh) * | 2013-03-15 | 2013-06-12 | 中山达华智能科技股份有限公司 | 一种发光二极管及其制造方法 |
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TWI514635B (zh) * | 2011-12-29 | 2015-12-21 | Hon Hai Prec Ind Co Ltd | 發光二極體燈條及其製造方法 |
TWI536617B (zh) * | 2012-02-17 | 2016-06-01 | 鴻海精密工業股份有限公司 | 發光二極體燈條及其製造方法 |
TWI559577B (zh) * | 2014-11-06 | 2016-11-21 | Sinogerman Entpr Co Ltd | SMT type LED package element, its manufacturing method and light emitting device |
JP6736256B2 (ja) * | 2015-03-23 | 2020-08-05 | ローム株式会社 | Ledパッケージ |
KR101778848B1 (ko) * | 2015-08-21 | 2017-09-14 | 엘지전자 주식회사 | 발광소자 패키지 어셈블리 및 이의 제조 방법 |
CN107331648A (zh) * | 2017-08-17 | 2017-11-07 | 京东方科技集团股份有限公司 | 封装结构及其密封性检测方法和制造方法 |
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US20090262516A1 (en) * | 2008-01-17 | 2009-10-22 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
CN101908586A (zh) * | 2009-06-03 | 2010-12-08 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
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JP2009527622A (ja) * | 2006-02-24 | 2009-07-30 | ダウ・コーニング・コーポレイション | シリコーンで封入された光放出装置及び前記シリコーンを調製するための硬化性シリコーン組成物 |
US20080311373A1 (en) * | 2007-06-12 | 2008-12-18 | Jen-Sung Hsu | Electromagnetic wave absorbing material and method for preparing the same |
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US20090262516A1 (en) * | 2008-01-17 | 2009-10-22 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
CN101908586A (zh) * | 2009-06-03 | 2010-12-08 | 亿光电子工业股份有限公司 | 发光二极管封装结构 |
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